CN104897290B - A kind of the pixel equivalent circuit and test method of face formation infrared detector - Google Patents
A kind of the pixel equivalent circuit and test method of face formation infrared detector Download PDFInfo
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Abstract
The present invention provides a kind of the pixel equivalent circuit and test method of face formation infrared detector, and the pixel equivalent circuit includes：Equivalent blind pixel is used for the blind pixel of analog MEMS, provides equivalent control signal；Equivalent effective pixel is used for the effective pixel of analog MEMS, provides equivalent detectable signal；Reading circuit, for the equivalent control signal and equivalent detectable signal to be amplified and read；The equivalent blind pixel includes the first metal-oxide-semiconductor and first switch, and equivalent effective pixel includes the second metal-oxide-semiconductor and second switch.The invention has the advantages that：1）The production efficiency and product yield of face formation infrared detector can be significantly improved；2）Realize the global function test before MEMS structure manufacture in the formation infrared detector of face；3）The test packaging cost of reduction face formation infrared detector product.
Description
Technical field
The invention belongs to MEMS and IC design field, more particularly to a kind of pixel of face formation infrared detector
Equivalent circuit and test method.
Background technology
Infrared detector (Infrared Detector) is that incident infrared radiation signal is transformed into electric signal output
Device.Infra-red radiation is electromagnetic wave of the wavelength between visible light and microwave, and human eye is detectable.Discover this radiation
In the presence of and measure its power, it is necessary to it is transformed into other physical quantitys that can be discovered and measure.It is, in general, that infra-red radiation shines
Any effect caused by object is penetrated, as long as effect can measure and sensitive enough, can be used to measure the strong of infra-red radiation
It is weak.Mainly thermo-effect of infrared radiation and the photoelectric effect that modern infrared detector is utilized.The output of these effects is mostly electricity,
Or method appropriate can be used to be transformed into electricity.
Infrared focal plane array is beginning of the eighties late 1970s, is answered in national defense applications and other strategy and tactics
Grow up under promotion.It is the important photoelectric device for obtaining scenery infrared emanation information.Infrared focal plane array
Belong to second generation infrared imaging device, be the core component of modern infrared imaging system, there is simple in structure, the operation is stable, make an uproar
The advantages that sound equivalent temperature difference is small, high sensitivity.Therefore, infrared focal plane array be widely used in military, industry, agricultural, medical treatment,
In the every field such as forest fire protection.
The pixel area of face formation infrared detector is larger, accounts for the chip area of majority, the quality of pixel quality
Determine the display effect of image below.After pixel receives external information, faint current signal will pass through at reading circuit
Reason, becomes detectable voltage signal.
Non-refrigerating infrared focal plane reading circuit (ROIC) is a kind of integrated processing circuit of dedicated digital-to-analogue mixed signal, with
The development of integrated circuit technology and technology, the especially maturation of CMOS Integrated-manufacturing Techniques and technique, so that ROIC has been obtained fast
Violent development.Pixel is the essential part of face formation infrared detector, the size and structure of pixel be influence below at
The key factor of image quality amount.Currently, common method is all first to carry out reading circuit, MEMS pixels are then grown above
（That is VOx films）, still, in early period circuit design, the performance of reading circuit is unpredictable.
In the prior art, the test of reading circuit is often carried out after MEMS pixels complete and encapsulate, still,
If MEMS pixels find that reading circuit goes wrong again after completing, serious loss, including MEMS can be caused to production
The reduction of the cost of manufacture of pixel and the waste of packaging cost and production efficiency.
In view of above the problems of the prior art, provides and a kind of before the making of MEMS pixels reading circuit is tested
Circuit and test method are necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of face formation infrared detectors
Pixel equivalent circuit and test method are read because MEMS pixels form front formation infrared detector in the prior art for solving
Circuit performance is unpredictable and the problem of cause cost of manufacture and packaging cost to improve.
In order to achieve the above objects and other related objects, it is equivalent to provide a kind of pixel of face formation infrared detector by the present invention
Circuit includes at least：
Equivalent blind pixel is used for the blind pixel of analog MEMS, provides equivalent control signal；
Equivalent effective pixel is used for the effective pixel of analog MEMS, provides equivalent detectable signal；
Reading circuit, for the equivalent control signal and equivalent detectable signal to be amplified and read；
The equivalent blind pixel includes the first metal-oxide-semiconductor and first switch, wherein the grid connection the of first metal-oxide-semiconductor
One adjustable voltage, the first pole connect power supply, and the first switch is connected to the second pole and the reading electricity of first metal-oxide-semiconductor
Between road；
Equivalent effective pixel includes the second metal-oxide-semiconductor and second switch, wherein the grid of second metal-oxide-semiconductor connects
Second adjustable voltage, the second pole ground connection, the second switch are connected to the first pole of second metal-oxide-semiconductor and the reading circuit
Between.
A kind of preferred embodiment of the pixel equivalent circuit of face formation infrared detector as the present invention, wherein pass through tune
First adjustable voltage is saved to adjust the resistance of first metal-oxide-semiconductor, realizes the equivalent blind pixel to the blind pixels of MEMS
Simulation；By adjusting second adjustable voltage to adjust the resistance of second metal-oxide-semiconductor, equivalent effective pixel pair is realized
The simulation of the effective pixels of MEMS.
A kind of preferred embodiment of the pixel equivalent circuit of face formation infrared detector as the present invention, the first switch
Connect as the common output end of the equivalent blind pixel and equivalent effective pixel and the reading circuit after being connected with second switch
It connects.
A kind of preferred embodiment of the pixel equivalent circuit of face formation infrared detector as the present invention, the first switch
For first switch metal-oxide-semiconductor, the first switch metal-oxide-semiconductor realizes its on or off by the first gating signal；Described second opens
It is second switch metal-oxide-semiconductor to close, and the second switch metal-oxide-semiconductor realizes its on or off by the second gating signal.
The survey that the present invention also provides a kind of using the pixel equivalent circuit of the face formation infrared detector to reading circuit
Method for testing, including step：
1）Simulation of the equivalent blind pixel to the blind pixels of MEMS, output etc. are realized by controlling first adjustable voltage
Imitate control signal；Meanwhile realizing equivalent effective pixel to the effective pixels of MEMS by controlling second adjustable voltage
Simulation, output equivalent detectable signal；
2) integral is carried out to the equivalent equivalent detectable signal of control signal machine and forms integration current, and by the integration current
It exports to the reading circuit；
3）Reading test is carried out to the reading circuit based on the integration current, with the property of the corresponding reading circuit of determination
Whether standard can be reached.
The pixel equivalent circuit using face formation infrared detector as the present invention is to the test method of reading circuit
A kind of preferred embodiment, the test method are carried out at before the blind pixels of MEMS and the effective pixel formation of MEMS.
The pixel equivalent circuit using face formation infrared detector as the present invention is to the test method of reading circuit
A kind of preferred embodiment, wherein the value of the equivalent control signal based on first adjustable voltage is set as the blind pixel work of MEMS
When minimum output valve and maximum output value between；The value of equivalent detectable signal based on second adjustable voltage is set as
Between minimum output valve and maximum output value when the effective pixels of MEMS work.
The present invention also provides a kind of face formation infrared detectors, including：
MEMS pixel arrays include the MEMS pixels of multiple rectangular arrays arrangement, for being exported according to the variation of temperature
The current signal of variation；
Multiple equivalent blind pixels, each equivalent blind pixel are correspondingly arranged with each row MEMS pixels row, are used for the blind picture of analog MEMS
Member provides equivalent control signal；Wherein, the equivalent blind pixel includes the first metal-oxide-semiconductor and first switch, first metal-oxide-semiconductor
Grid connect the first adjustable voltage, the first pole connects power supply, and the first switch is connected to the second pole of first metal-oxide-semiconductor
And between reading circuit array；
Multiple equivalent effective pixels, each equivalent effective pixel are correspondingly arranged with each row MEMS pixels row, are used for analog MEMS
Effective pixel provides equivalent detectable signal；Wherein, equivalent effective pixel includes the second metal-oxide-semiconductor and second switch, and described the
The grids of two metal-oxide-semiconductors connects the second adjustable voltage, the second pole ground connection, and the second switch is connected to the of second metal-oxide-semiconductor
Between one pole and reading circuit array；
Reading circuit array, what current signal for export to the respectively MEMS pixels, the respectively equivalent blind pixel exported etc.
Effect control signal and the equivalent detectable signal that respectively equivalent effective pixel exports are amplified and read.
A kind of preferred embodiment of face formation infrared detector as the present invention, the equivalent blind pixel and described equivalent has
Effect pixel is respectively arranged at the both sides up and down of each row MEMS pixels.
As described above, the present invention provides a kind of the pixel equivalent circuit and test method of face formation infrared detector, it is described
Pixel equivalent circuit includes：Equivalent blind pixel is used for the blind pixel of analog MEMS, provides equivalent control signal；Equivalent effective pixel,
For the effective pixel of analog MEMS, equivalent detectable signal is provided；Reading circuit, for the equivalent control signal and equivalent spy
Signal is surveyed to be amplified and read；The equivalent blind pixel includes the first metal-oxide-semiconductor and first switch, wherein first metal-oxide-semiconductor
Grid connect the first adjustable voltage, the first pole connects power supply, and the first switch is connected to the second pole of first metal-oxide-semiconductor
And between the reading circuit；Equivalent effective pixel includes the second metal-oxide-semiconductor and second switch, wherein second metal-oxide-semiconductor
Grid connect the second adjustable voltage, the second pole ground connection, the second switch is connected to the first pole and the institute of second metal-oxide-semiconductor
It states between reading circuit.The invention has the advantages that：The production efficiency of face formation infrared detector can be significantly improved
And product yield；2）Realize the global function test before MEMS structure manufacture in the formation infrared detector of face；3）Reduction face formation
The test packaging cost of infrared detector product.
Description of the drawings
Fig. 1 is shown as the structural schematic diagram of the pixel equivalent circuit of the face formation infrared detector of the present invention.
Fig. 2 is shown as the survey using the pixel equivalent circuit of the face formation infrared detector to reading circuit of the present invention
The step flow diagram of method for testing.
Fig. 3 is shown as the structural schematic diagram of the face formation infrared detector of the present invention.
Component label instructions
10 equivalent blind pixels
20 equivalent effective pixels
30 reading circuits
The first metal-oxide-semiconductors of Mbeqv
M1 first switches
The second metal-oxide-semiconductors of Maeqv
M2 second switches
S11~S13 steps 1）~step 3）
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 3.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
As shown in Figure 1, the present embodiment provides a kind of pixel equivalent circuit of face formation infrared detector, include at least：
Equivalent blind pixel 10 is used for the blind pixel of analog MEMS, provides equivalent control signal；
Equivalent effective pixel 20 is used for the effective pixel of analog MEMS, provides equivalent detectable signal；
Reading circuit 30, for the equivalent control signal and equivalent detectable signal to be amplified and read；
The equivalent blind pixel 10 includes the first metal-oxide-semiconductor Mbeqv and first switch M1, wherein first metal-oxide-semiconductor
The grid of Mbeqv connects the first adjustable voltage VBEQV, and the first pole connects power supply VSK, and the first switch M1 is connected to described the
Between the second pole and the reading circuit 30 of one metal-oxide-semiconductor Mbeqv；
Equivalent effective pixel 20 includes the second metal-oxide-semiconductor Maeqv and second switch M2, wherein second metal-oxide-semiconductor
The grid of Maeqv connects the second adjustable voltage VAEQV, and the second pole is grounded VDET, and the second switch M2 is connected to described second
Between the first pole and the reading circuit 30 of metal-oxide-semiconductor Maeqv.
As an example, by adjusting first adjustable voltage to adjust the resistance of the first metal-oxide-semiconductor Mbeqv, realize
Simulation of the equivalent blind pixel 10 to the blind pixels of MEMS；By adjusting second adjustable voltage to adjust the 2nd MOS
The resistance of pipe Maeqv realizes simulation of the equivalent effective pixel 20 to the effective pixels of MEMS.
As an example, the first switch M1 as the equivalent blind pixel 10 and equivalent has after being connected with second switch M2
The common output end of effect pixel 20 is connect with the reading circuit 30.
As an example, the first switch M1 is first switch metal-oxide-semiconductor, the first switch metal-oxide-semiconductor passes through the first gating
Signal realizes its on or off；The second switch M2 is second switch metal-oxide-semiconductor, and the second switch metal-oxide-semiconductor passes through second
Gating signal realizes its on or off.In the present embodiment, the first switch metal-oxide-semiconductor and second switch metal-oxide-semiconductor design
For NMOS tube.
It should be noted that after the pixel equivalent circuit of the face formation infrared detector of the present embodiment completes, MEMS
Pixel is formed not yet, is reserved with MEMS pixel regions to be formed.
Specifically, when the pixel equivalent circuit work of the face formation infrared detector of the present embodiment, the power input is high
Voltage, the first gating signal and the second gating signal input high level make the first switch metal-oxide-semiconductor and second switch metal-oxide-semiconductor lead
Logical, first adjustable signal generates equivalent control signal, second adjustable signal according to actual test demand input voltage
According to actual test demand input voltage, equivalent detectable signal, the equivalent control signal and equivalent detectable signal are generated from two
Integration current is formed after the connected node superposition of a switch to export to the reading circuit 30, it can be to the reading circuit 30
Properties are tested, and judge whether the reading circuit 30 reaches standard according to test result, to exclude defect ware, are improved
Product yield saves packaging cost.
As shown in Fig. 2, the present embodiment also provides a kind of pixel equivalent circuit pair using the face formation infrared detector
The test method of reading circuit 30, including step：
Step 1 is carried out first）S11 realizes the equivalent blind pixel 10 to MEMS by controlling first adjustable voltage
The simulation of blind pixel, output equivalent control signal；Meanwhile realizing equivalent effective picture by controlling second adjustable voltage
The simulation of first 20 pairs of effective pixels of MEMS, output equivalent detectable signal；
Then step 2) S12 is carried out, carrying out integral to the equivalent equivalent detectable signal of control signal machine forms integral electricity
Stream, and the integration current is exported to the reading circuit 30；
Finally carry out step 3）S13 carries out reading test, with determination based on the integration current to the reading circuit 30
Whether the performance of corresponding reading circuit 30 reaches standard.
In the present embodiment, the test method is carried out at before the blind pixels of MEMS and the effective pixel formation of MEMS.
In the present embodiment, the value of the equivalent control signal based on first adjustable voltage is set as the blind pixel works of MEMS
Between minimum output valve and maximum output value when making；The value of equivalent detectable signal based on second adjustable voltage is set as
Between minimum output valve and maximum output value when the effective pixels of MEMS work.
As shown in figure 3, the present embodiment also provides a kind of face formation infrared detector, including：
MEMS pixel arrays include the MEMS pixels of multiple rectangular arrays arrangement, for being exported according to the variation of temperature
The current signal of variation；
Multiple equivalent blind pixels 10, each equivalent blind pixel 10 are correspondingly arranged with each row MEMS pixels row, are used for analog MEMS
Blind pixel provides equivalent control signal；Wherein, the equivalent blind pixel 10 includes the first metal-oxide-semiconductor Mbeqv and first switch M1,
The grid of the first metal-oxide-semiconductor Mbeqv connects the first adjustable voltage, and the first pole connects power supply, and the first switch M1 is connected to
Between the second pole and reading circuit array of the first metal-oxide-semiconductor Mbeqv；
Multiple equivalent effective pixels 20, each equivalent effective pixel 20 is correspondingly arranged with each row MEMS pixels row, for simulating
The effective pixels of MEMS, provide equivalent detectable signal；Wherein, equivalent effective pixel 20 includes the second metal-oxide-semiconductor Maeqv and second
The grid of switch M2, the second metal-oxide-semiconductor Maeqv connect the second adjustable voltage, the second pole ground connection, the second switch M2 connections
Between the first pole and reading circuit array of the second metal-oxide-semiconductor Maeqv；
Reading circuit array, current signal for export to the respectively MEMS pixels, the respectively equivalent output of blind pixel 10
Equivalent control signal and the equivalent detectable signal that respectively equivalent effective pixel 20 exports are amplified and read.
As an example, the equivalent blind pixel 10 and equivalent effective pixel 20 are respectively arranged at each row MEMS pixels
Upper and lower both sides.
As an example, respectively equivalent effective pixel 20 of row MEMS pixels, the equivalent blind pixel 10 of respective column and respective column is logical
It crosses same root bit line and is connected to the reading circuit array.
As described above, the present invention provides a kind of the pixel equivalent circuit and test method of face formation infrared detector, it is described
Pixel equivalent circuit includes：Equivalent blind pixel 10 is used for the blind pixel of analog MEMS, provides equivalent control signal；Equivalent effective picture
Member 20 is used for the effective pixel of analog MEMS, provides equivalent detectable signal；Reading circuit 30, for the equivalent control signal
And equivalent detectable signal is amplified and reads；The equivalent blind pixel 10 includes the first metal-oxide-semiconductor Mbeqv and first switch M1,
Wherein, the grid of the first metal-oxide-semiconductor Mbeqv connects the first adjustable voltage, and the first pole connects power supply, and the first switch M1 connects
It is connected between the second pole and the reading circuit 30 of the first metal-oxide-semiconductor Mbeqv；Equivalent effective pixel 20 includes second
Metal-oxide-semiconductor Maeqv and second switch M2, wherein the grid of the second metal-oxide-semiconductor Maeqv connects the second adjustable voltage, and the second pole connects
Ground, the second switch M2 are connected between the first pole and the reading circuit 30 of the second metal-oxide-semiconductor Maeqv.The present invention
It has the advantages that：The production efficiency and product yield of face formation infrared detector can be significantly improved；2）Realize face
Global function test in formation infrared detector before MEMS structure manufacture；3）The test of reduction face formation infrared detector product is sealed
Dress up this.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (9)
1. a kind of pixel equivalent circuit of face formation infrared detector, which is characterized in that include at least：
Equivalent blind pixel is used for the blind pixel of analog MEMS, provides equivalent control signal；
Equivalent effective pixel is used for the effective pixel of analog MEMS, provides equivalent detectable signal；
Reading circuit, for the equivalent control signal and equivalent detectable signal to be amplified and read；
The equivalent blind pixel includes the first metal-oxide-semiconductor and first switch, wherein the grid connection first of first metal-oxide-semiconductor can
Adjust voltage, the first pole connect power supply, the first switch be connected to first metal-oxide-semiconductor the second pole and the reading circuit it
Between；
Equivalent effective pixel includes the second metal-oxide-semiconductor and second switch, wherein the grid connection second of second metal-oxide-semiconductor
Adjustable voltage, the second pole ground connection, the second switch be connected to second metal-oxide-semiconductor the first pole and the reading circuit it
Between.
2. the pixel equivalent circuit of formation infrared detector in face according to claim 1, it is characterised in that：
By adjusting first adjustable voltage to adjust the resistance of first metal-oxide-semiconductor, the equivalent blind pixel pair is realized
The simulation of the blind pixels of MEMS；
By adjusting second adjustable voltage to adjust the resistance of second metal-oxide-semiconductor, equivalent effective pixel pair is realized
The simulation of the effective pixels of MEMS.
3. the pixel equivalent circuit of formation infrared detector in face according to claim 1, it is characterised in that：Described first opens
It closes after being connected with second switch as the common output end of the equivalent blind pixel and equivalent effective pixel and the reading circuit
Connection.
4. the pixel equivalent circuit of formation infrared detector in face according to claim 1, it is characterised in that：Described first opens
It is first switch metal-oxide-semiconductor to close, and the first switch metal-oxide-semiconductor realizes its on or off by the first gating signal；Described second
Switch is second switch metal-oxide-semiconductor, and the second switch metal-oxide-semiconductor realizes its on or off by the second gating signal.
5. a kind of pixel equivalent circuit using the face formation infrared detector described in 4 any one of Claims 1 to 4 is to reading
The test method of circuit, it is characterised in that：Including step：
1) simulation of the equivalent blind pixel to the blind pixels of MEMS, output equivalent pair are realized by controlling first adjustable voltage
According to signal；Meanwhile realizing simulation of the equivalent effective pixel to the effective pixels of MEMS by controlling second adjustable voltage,
Output equivalent detectable signal；
2) integral is carried out to the equivalent control signal and equivalent detectable signal and forms integration current, and the integration current is exported
To the reading circuit；
3) reading test is carried out to the reading circuit based on the integration current, the performance with the corresponding reading circuit of determination is
It is no to reach standard.
6. the pixel equivalent circuit according to claim 5 using face formation infrared detector is to the test side of reading circuit
Method, it is characterised in that：The test method is carried out at before the blind pixels of MEMS and the effective pixel formation of MEMS.
7. the pixel equivalent circuit according to claim 5 using face formation infrared detector is to the test side of reading circuit
Method, it is characterised in that：
The value of equivalent control signal based on first adjustable voltage is set as minimum output valve when the blind pixels of MEMS work
And between maximum output value；
The value of equivalent detectable signal based on second adjustable voltage is set as minimum output when the effective pixels of MEMS work
Between value and maximum output value.
8. a kind of face formation infrared detector, which is characterized in that including：
MEMS pixel arrays include the MEMS pixels of multiple rectangular arrays arrangement, change for being exported according to the variation of temperature
Current signal；
Multiple equivalent blind pixels, each equivalent blind pixel are correspondingly arranged with each row MEMS pixels row, are used for the blind pixel of analog MEMS, carry
For equivalent control signal；Wherein, the equivalent blind pixel includes the first metal-oxide-semiconductor and first switch, the grid of first metal-oxide-semiconductor
The first adjustable voltage is connected, the first pole connects power supply, and the first switch is connected to the second pole and the reading of first metal-oxide-semiconductor
Between gate array；
Multiple equivalent effective pixels, each equivalent effective pixel is correspondingly arranged with each row MEMS pixels row, effective for analog MEMS
Pixel provides equivalent detectable signal；Wherein, equivalent effective pixel include the second metal-oxide-semiconductor and second switch, described second
The grid of metal-oxide-semiconductor connects the second adjustable voltage, the second pole ground connection, and the second switch is connected to the first of second metal-oxide-semiconductor
Between pole and reading circuit array；
Reading circuit array, it is equivalent right that current signal for export to the respectively MEMS pixels, the respectively equivalent blind pixel export
According to signal and respectively the equivalent detectable signal of equivalent effective pixel output is amplified and reads.
9. formation infrared detector in face according to claim 8, it is characterised in that：The equivalent blind pixel and described equivalent
Effective pixel is respectively arranged at the both sides up and down of each row MEMS pixels.
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| CN108020723B (en) * | 2017-10-30 | 2020-12-04 | 北方广微科技有限公司 | Ultra-high impedance measuring device for capacitive uncooled focal plane readout circuit |
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