CN104883167B - Improve the circuit of IGBT turn-off performances - Google Patents
Improve the circuit of IGBT turn-off performances Download PDFInfo
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- CN104883167B CN104883167B CN201410073568.6A CN201410073568A CN104883167B CN 104883167 B CN104883167 B CN 104883167B CN 201410073568 A CN201410073568 A CN 201410073568A CN 104883167 B CN104883167 B CN 104883167B
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Abstract
The invention discloses a kind of circuit of improvement IGBT turn-off performances, it includes：IGBT, curent change detection circuit and resistance varying circuit, the IGBT are in series with first resistor；The current transformation detection circuit includes：The first transistor, capacitor, shunt resistance, the base stage and colelctor electrode of the first transistor are connected with feeder ear and output end respectively, and second resistance is connected between the base stage and feeder ear, 3rd resistor is connected between the colelctor electrode and output end；The resistance varying circuit includes：Second transistor, third transistor, diode, the 4th resistance and the 5th resistance.The circuit of the improvement IGBT turn-off performances of the present invention can change the size of IGBT resistance in IGBT turn off process, the demand of relatively large resistance when meeting small resistance when IGBT is opened, shut-off.The contradiction between turn-off power loss and voltage overshoot is solved, IGBT turn-off performances are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of circuit of improvement IGBT turn-off performances.
Background technology
Igbt（Abbreviation IGBT）Combine high power transistor（GTR）And high-power field-effect transistor
（MOSFET）Advantage, be more satisfactory wholly-controled device, with easy to control, switching speed is fast, working frequency is high, safety
The advantages of workspace is big.Current IGBT module capacity has reached 2000A/6500V, meets power electronics and power drives neck
Domain application requirement.
Turning on and off for IGBT is that grid and emitter capacity discharge and recharge are completed by resistance, so grid
The size of resistance directly affects grid charge and discharge electrical time constant, and then affects IGBT switching process.Therefore, resistance
It must optimize and carefully select according to application requirement.
In IGBT applications, the selection that system switching is lost with resistance is closely bound up.In opening process, such as reduce grid
Electrode resistance, then cause IGBT to open speed and accelerate, open power consumption reduction.However, by fly-wheel diode Reverse recovery and absorbing electricity
The influence of the discharge current of appearance, it is excessive to open the too fast current change rate di/dt that IGBT can be caused to bear, even meeting when serious
Cause the damage of IGBT and fly-wheel diode.
It now should purposefully change the peak value electricity in the choosing value of resistance, control opening process in opening process
Stream.Meanwhile, the choosing value of resistance also has an impact to turn off process.Specifically, resistance is smaller is conducive to accelerating shut-off speed
Degree and reduce shut-off power consumption, be also beneficial to avoid during shut-off due to caused by dv/dt the Miller effect IGBT mislead.But,
Found by testing different voltage class IGBT modules, 1700V IGBT module, resistance choosing are less than for voltage class
The too small collector current fall off rate di/dt that may result in of value is excessive, and stray inductance can produce larger on IGBT in circuit
Colelctor electrode surge voltage and damage IGBT.Therefore, the different of resistance are required to influence during IGBT is turned on and off
IGBT use.
The content of the invention
In view of this, the invention provides the circuit for improving IGBT turn-off performances.
To achieve these goals, the circuit of a kind of improvement IGBT turn-off performances of the invention, it includes：IGBT, electric current
Change detecting circuit and resistance varying circuit, the IGBT are in series with first resistor；
The current transformation detection circuit includes：The first transistor, capacitor, shunt resistance, the first transistor with
The capacitor is in series, and is in parallel with the shunt resistance, the base stage and colelctor electrode of the first transistor respectively with confession
Electric end is connected with output end, second resistance is connected between the base stage and feeder ear, between the colelctor electrode and output end
It is connected with 3rd resistor；
The resistance varying circuit includes：Second transistor, third transistor, diode, the 4th resistance, Yi Ji
Five resistance；4th resistance is in series with institute first resistor, and the 4th resistance two ends be parallel with second transistor and
Diode, is serially connected between the second transistor and diode, and the base series of the second transistor have the described 5th
Resistance and third transistor, the base stage of the third transistor are connected with the colelctor electrode of the first transistor.
As a further improvement on the present invention, current transformation detection electric circuit inspection is to during electric current reduction during shut-off,
Second transistor is converted to cut-off state by opening state in the resistance varying circuit, and the third transistor is by ending
State Transferring is opening state.
As a further improvement on the present invention, when the IGBT is opened, the resistance of IGBT resistances is first resistor
Resistance, during the IGBT shut-offs, the resistance of IGBT resistances is first resistor and the resistance sum of the 4th resistance.
As a further improvement on the present invention, when the IGBT is opened, the 4th electricity in the resistance varying circuit
Resistance is by second transistor short circuit, during the IGBT shut-offs, the first resistor and the 4th resistance formation resistance.
As a further improvement on the present invention, the current change rate of current transformation detection electric circuit inspection and described the
The resistance of two resistance is corresponding with the electric capacity of capacitor.
As a further improvement on the present invention, the first transistor, second transistor, third transistor are triode.
Compared with prior art, the beneficial effects of the invention are as follows：The circuit of the improvement IGBT turn-off performances of the present invention can
Change the size of IGBT resistance in IGBT turn off process, meet relatively large when small resistance when IGBT is opened, shut-off
The demand of resistance.The contradiction between turn-off power loss and voltage overshoot is solved, IGBT turn-off performances are improved.Ensure IGBT
Chip over-pressed risk is reduced while with small turn-off power loss, meet the low turn-off power loss of igbt chip and high reliability will
Ask.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the circuit diagram of the circuit of the improvement IGBT turn-off performances of the present invention.
Embodiment
In order that those skilled in the art more fully understand the technical scheme in the present invention, below in conjunction with of the invention real
The accompanying drawing in example is applied, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described implementation
Example only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under the premise of creative work is not made, should all belong to protection of the present invention
Scope.
As shown in figure 1, the circuit 100 of the improvement IGBT turn-off performances of the present invention includes：IGBT10, curent change detection electricity
Road 20 and resistance varying circuit 30.Wherein, the IGBT10 is in series with first resistor 40, meanwhile, along the stream of electric current
Dynamic direction, the first resistor 40 is in series with the resistance varying circuit 30.
Specifically, the current transformation detection circuit 20 includes：The first transistor 21, capacitor 22, shunt resistance 23.
Wherein, the first transistor 21 is in series with the capacitor 22, and is in parallel with the shunt resistance 23.The shunting electricity
The voltage for hindering 23 two ends reduces and reduced with IGBT collector currents, and now, capacitor 22 is started to charge up, when the first transistor 21
Base current when being reduced to analog value, the first transistor 21 is then in cut-off state.In addition, the base of the first transistor 21
Pole and colelctor electrode are connected with feeder ear A and output end B respectively, and second resistance 24 is connected between the base stage and feeder ear A,
3rd resistor 25 is connected between the colelctor electrode and output end B.
The current transformation detection circuit can be used for when IGBT is turned off, the situation of change of electric current, electric current in detection circuit
The current changing rate of change detection electric circuit inspection is corresponding with the resistance of the second resistance and the electric capacity of capacitor, i.e., by setting
The detection to different current changing rates can be realized by putting the numerical value of capacitor and electric capacity.
Further, the resistance varying circuit 30 is specifically included：Second transistor 31, third transistor 32, two
Pole pipe 33, the 4th resistance 34 and the 5th resistance 35.Wherein, the 4th resistance 34 is in series with institute first resistor 40, and institute
The two ends for stating the 4th resistance 34 are parallel with second transistor 31 and diode 33, between the second transistor 31 and diode 33
It is serially connected, the base series of the second transistor 31 have the 5th resistance 35 and third transistor 32, and the described 3rd is brilliant
The base stage of body pipe 32 is connected with the colelctor electrode of the first transistor 21.
4th resistance 34 is when IGBT is opened, the short circuit of second transistor 31 being in parallel with it.Specifically, IGBT
When opening, resistance is only first resistor 40, and now the resistance of resistance is equal to the resistance of first resistor 40；When the electricity
When stream change detection circuit 20 detects electric current reduction, i.e. when IGBT is turned off, second is brilliant in the resistance varying circuit 30
Body pipe 31 is converted to cut-off state by opening state, and the third transistor 32 is converted to opening state by cut-off state, so that
The resistance 34 of first resistor 40 and the 4th is collectively forming IGBT resistance, and now resistance 34 opens time-varying with respect to IGBT
Greatly, the resistance of resistance is the resistance sum of the resistance 34 of first resistor 40 and the 4th when IGBT is turned off.So as to electricity of the invention
Road meets the demand to small resistance when IGBT is opened, and the demand to relatively large resistance resistance when off, puts down
The contradiction when IGBT that weighed is turned on and off.
Preferably, the first transistor 21 as described above, second transistor 31, third transistor 32 are triode.
In summary, the circuit of improvement IGBT turn-off performances of the invention can change the grid of IGBT in IGBT turn off process
The size of electrode resistance, the demand of relatively large resistance when meeting small resistance when IGBT is opened, shut-off.Shut-off is solved to damage
Contradiction between consumption and voltage overshoot, improves IGBT turn-off performances.Ensure to reduce while IGBT has small turn-off power loss
Chip overvoltage risk, meets the requirement of the low turn-off power loss of igbt chip and high reliability.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than described above is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as to the claim involved by limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art should
Using specification as an entirety, the technical scheme in each embodiment can also be through appropriate conjunction, and forming those skilled in the art can
With the other embodiment of understanding.
Claims (6)
1. a kind of circuit of improvement IGBT turn-off performances, it is characterised in that the circuit of the improvement IGBT turn-off performances includes：
IGBT, curent change detection circuit and resistance varying circuit, the IGBT are in series with first resistor；
The curent change detection circuit includes：The first transistor, capacitor, shunt resistance, the first transistor with it is described
Capacitor is in series, and is in parallel with the shunt resistance, and the capacitor is located at base stage and the institute of the first transistor
State between shunt resistance, the base stage and colelctor electrode of the first transistor are connected with feeder ear and output end respectively, the base
Second resistance is connected between pole and feeder ear, 3rd resistor is connected between the colelctor electrode and output end；
The resistance varying circuit includes：Second transistor, third transistor, diode, the 4th resistance and the 5th electricity
Resistance；4th resistance is in series with the institute first resistor, and the 4th resistance two ends be parallel with second transistor and
Diode, is serially connected between the second transistor and diode, and the base series of the second transistor have the described 5th
Resistance and third transistor, the base stage of the third transistor are connected with the colelctor electrode of the first transistor, and the described 3rd brilliant
The grounded emitter of body pipe.
2. the circuit of improvement IGBT turn-off performances according to claim 1, it is characterised in that the curent change detection electricity
Second transistor is converted to by opening state when electric current when road detects shut-off reduces, in the resistance varying circuit cuts
Only state, the third transistor is converted to opening state by cut-off state.
3. the circuit of improvement IGBT turn-off performances according to claim 1, it is characterised in that when the IGBT is opened,
The resistance of IGBT resistances is the resistance of first resistor, during the IGBT shut-offs, and the resistance of IGBT resistances is the first electricity
Resistance and the resistance sum of the 4th resistance.
4. the circuit of improvement IGBT turn-off performances according to claim 1, it is characterised in that when the IGBT is opened, institute
The 4th resistance in resistance varying circuit is stated by second transistor short circuit, during the IGBT shut-offs, the first resistor and
4th resistance formation resistance.
5. the circuit of improvement IGBT turn-off performances according to claim 1, it is characterised in that the curent change detection electricity
The current change rate of road detection is corresponding with the resistance of the second resistance and the electric capacity of capacitor.
6. the circuit of improvement IGBT turn-off performances according to claim 1, it is characterised in that the first transistor,
Two-transistor, third transistor are triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410073568.6A CN104883167B (en) | 2014-02-28 | 2014-02-28 | Improve the circuit of IGBT turn-off performances |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410073568.6A CN104883167B (en) | 2014-02-28 | 2014-02-28 | Improve the circuit of IGBT turn-off performances |
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| Publication Number | Publication Date |
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| CN104883167A CN104883167A (en) | 2015-09-02 |
| CN104883167B true CN104883167B (en) | 2017-11-03 |
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| CN201410073568.6A Active CN104883167B (en) | 2014-02-28 | 2014-02-28 | Improve the circuit of IGBT turn-off performances |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109618440B (en) * | 2019-01-30 | 2021-12-03 | 九阳股份有限公司 | Electromagnetic heating control circuit and control method |
| CN117914295B (en) * | 2024-03-19 | 2024-07-09 | 西安奇点能源股份有限公司 | IGBT driving configuration device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751970A (en) * | 2012-07-09 | 2012-10-24 | 佛山市柏克新能科技股份有限公司 | IGBT (Insulated Gate Bipolar Translator) driving protection circuit |
| CN102842606A (en) * | 2012-08-24 | 2012-12-26 | 中国电力科学研究院 | Variable grid internal resistance for IGBT (Insulated Gate Bipolar Transistor) chip and design method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5430608B2 (en) * | 2011-04-27 | 2014-03-05 | カルソニックカンセイ株式会社 | Semiconductor switching element drive circuit |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751970A (en) * | 2012-07-09 | 2012-10-24 | 佛山市柏克新能科技股份有限公司 | IGBT (Insulated Gate Bipolar Translator) driving protection circuit |
| CN102842606A (en) * | 2012-08-24 | 2012-12-26 | 中国电力科学研究院 | Variable grid internal resistance for IGBT (Insulated Gate Bipolar Transistor) chip and design method thereof |
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Address after: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee after: Xi'an Zhongche Yongji Electric Co. Ltd. Address before: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee before: Xi'an Yongdian Electric Co., Ltd. |