CN104880865B - Array substrate and preparation method thereof, liquid crystal display panel - Google Patents
Array substrate and preparation method thereof, liquid crystal display panel Download PDFInfo
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- CN104880865B CN104880865B CN201510344529.XA CN201510344529A CN104880865B CN 104880865 B CN104880865 B CN 104880865B CN 201510344529 A CN201510344529 A CN 201510344529A CN 104880865 B CN104880865 B CN 104880865B
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- insulating layer
- layer
- via hole
- metal layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 98
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 15
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003319 supportive effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention discloses a kind of array substrate comprising: first substrate (11);The metal layer (13) being arranged on first substrate (11);Cover the second insulating layer (14) of metal layer (13), wherein there is the via hole (141) for exposing metal layer (13) in second insulating layer (14);Conductive layer (15) that is on second insulating layer (14) and being contacted by via hole (141) with metal layer (13) is set;It is arranged on conductive layer (15) and is located at the interval body (16) in the non-via area of second insulating layer (14) and in via hole (141).Invention additionally discloses a kind of production method of array substrate and with the liquid crystal display panel of the array substrate.In the present invention, it is located in non-via area light shield together with utilizing with the interval body in via hole to be formed simultaneously, needs first procedure only to complete, compared with prior art, one of light shield and first procedure can be saved to reduce the production cost while reduction Production Time improves efficiency.
Description
Technical field
The invention belongs to technical field of liquid crystal display, in particular, being related to a kind of array substrate and preparation method thereof, liquid crystal
Panel.
Background technique
Existing liquid crystal display panel includes: colored filter (CF) substrate and thin film transistor (TFT) array to box setting
(Array) substrate, and the liquid crystal layer being folded between the two substrates.
Spacing distance between CF substrate and array substrate relies primarily on the interval body being arranged between the two substrates
(Photo Spacer, abbreviation PS) carrys out support and control.And PS is divided into two kinds: one kind is main interval body (Main PS), plays master
The supporting role wanted;Another kind is secondary interval body (Sub PS), is played a supportive role after Main PS is compressed.
In the conventional fabrication process of PS, need twice light shield (Mask) Lai Shixian, that is, need twice processing procedure complete to make
Make, so that Production Time is longer, while cost of manufacture is improved.
Summary of the invention
In order to solve the above-mentioned problems of the prior art, the purpose of the present invention is to provide a kind of array substrate, packets
It includes: first substrate;Metal layer on the first substrate is set;Cover the second insulating layer of the metal layer, wherein described
There is via hole, the via hole exposes the metal layer in second insulating layer;Conductive layer on the second insulating layer is set,
In, the conductive layer is contacted by the via hole with the metal layer;It is arranged on the conductive layer and is located at described the
Interval body in the non-via area of two insulating layers and in the via hole.
Further, the array substrate further include: be arranged in first between the metal layer and the first substrate
Insulating layer.
Further, by adjusting the size of the via hole or the thickness of the second insulating layer, institute is located at adjustment
State the interval body in non-via area and the difference in height between the interval body in the via hole.
The present invention also provides a kind of liquid crystal display panel, including the colored filter substrate being oppositely arranged and array substrate,
In, the array substrate includes: first substrate;Metal layer on the first substrate is set;Cover the of the metal layer
Two insulating layers, wherein there is via hole, the via hole exposes the metal layer in the second insulating layer;It is arranged described second
Conductive layer on insulating layer, wherein the conductive layer is contacted by the via hole with the metal layer;It is arranged in the conductive layer
Above and it is located at the interval body in the non-via area of the second insulating layer and in the via hole, wherein be located at described non-
Interval body in via area contacts the colored filter substrate.
Further, the colored filter substrate includes: the second substrate;Black square on the second substrate is set
Battle array;It is arranged on the second substrate and the chromatic photoresist with the black matrix" interval;It is arranged on the chromatic photoresist
Third insulating layer, wherein the interval body contact in the non-via area is contacted with the third insulating layer.
A further object of the present invention is to provide a kind of production method of array substrate again comprising: on the first substrate
Form metal layer;Form the second insulating layer for covering the metal layer;Via hole is formed in the second insulating layer, wherein institute
It states via hole and exposes the metal layer;Conductive layer is formed on the second insulating layer, wherein the conductive layer passes through the via hole
It is contacted with the metal layer;Non- via area and the institute for being located at the second insulating layer are formed on the conductive layer simultaneously
State the interval body in via hole.
Further, it is formed before metal layer on the first substrate, forms the first insulating layer on the first substrate.
Beneficial effects of the present invention: in the present invention, interval body on the non-via area of second insulating layer and
Interval body in via hole is formed simultaneously using one of light shield (Mask), that is, is needed first procedure to be formed to make, compared
The prior art, can save one of light shield and first procedure reduces and is fabricated to while reduction Production Time improves efficiency
This.
Detailed description of the invention
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing:
Fig. 1 is the schematic side view of the liquid crystal display panel of embodiment according to the present invention;
Fig. 2A to Fig. 2 F is the flow chart of the production method of the array substrate of embodiment according to the present invention.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, in order to understand device, the area Ceng He is exaggerated
The thickness in domain, identical label can be used to indicate identical element in the whole instruction and attached drawing.
It will be appreciated that when one layer or element are referred to as and are located at, are arranged or are formed in another layer or substrate "upper", it
Can directly, be set to or be formed on another layer or substrate, or there may also be middle layers.
Fig. 1 is the schematic side view of the liquid crystal display panel of embodiment according to the present invention.
Referring to Fig.1, the liquid crystal display panel of embodiment according to the present invention includes: thin film transistor (TFT) array (Thin Film
Transistor Array) substrate (hereinafter referred to as array substrate) 10, (the following letter of colored filter (Color Filter) substrate
Claim CF substrate) 20, liquid crystal layer 30;Wherein, box is arranged in array substrate 10 and CF substrate 20, and liquid crystal layer 30 is folded in the two bases
Between plate.
The array substrate 10 of embodiment according to the present invention include: first substrate 11, the first insulating layer 12, metal layer 13,
15, two second insulating layer 14, conductive layer interval bodies (PS) 16.In addition, the array substrate 10 of embodiment according to the present invention is also
It may include the device of other suitable types, since these devices are not of the invention mainly for point, in order to avoid superfluous
It states, no longer describes herein, those skilled in the art can refer to the prior art to obtain other related devices of array substrate 10
Structure.
In the present embodiment, first substrate 11 is transparent glass substrate, and but the present invention is not limited thereto, for example, the first base
Plate 11 is also possible to transparent resin substrate.
First insulating layer 12 is arranged on first substrate 11.In the present embodiment, the first insulating layer 12 is set up directly on
On one substrate 11.In the present embodiment, the first insulating layer can be used silicon nitride and be formed, but the present invention is not restricted to this.
In the present embodiment, metal layer 13 is set up directly on the first insulating layer 12, i.e., metal layer 13 indirectly setting the
On one substrate 11.But the present invention is not restricted to this, for example, the first insulating layer 12 can be omitted, such metal layer 13 is directly set
It sets on first substrate 11.
Second insulating layer 14 is set up directly on the first insulating layer 12 and covers metal layer 13, can be used as flatness layer.?
In the present embodiment, second insulating layer 14 is formed using organic insulating material, but the present invention is not restricted to this.Second insulating layer 14
In there is via hole 141, which exposes metal layer 13.
Conductive layer 15 is set up directly in second insulating layer 14, and conductive layer 15 passes through 141 contact metal layer 13 of via hole.
In the present embodiment, conductive layer 15 uses indium tin oxide material, but the present invention is not restricted to this.
Two interval bodies 16 are set up directly on conductive layer 15.One of two interval bodies 16 are located at the non-of second insulating layer 14
On via area, wherein one of two interval bodies 16 are main interval body (Main PS);Two the another of interval body 16 are located at
In via hole 141, wherein two the another of interval body 16 are secondary interval body (Sub PS).In the present invention, not with shown in FIG. 1
The quantity of interval body 16 is limited, and can be any amount.
The array substrate 10 of embodiment according to the present invention, between being located on the non-via area of second insulating layer 14
The light shield (Mask) together with is formed simultaneously spacer 16 with the interval body 16 in via hole 141, that is, needs first procedure
Production is formed, and compared with prior art, can save one of light shield and first procedure, reduction Production Time improves efficiency same
When, it reduces the production cost.
The CF substrate 20 of embodiment according to the present invention includes: the second substrate 21, black matrix" 22, chromatic photoresist 23,
Three insulating layers 24.
In the present embodiment, the second substrate 21 is transparent glass substrate, and but the present invention is not limited thereto, for example, the second base
Plate 21 is also possible to transparent resin substrate.
Black matrix" 22 is arranged in the second substrate 21.In the present embodiment, black matrix" 22 is using by metals such as chromium
The metal layer patterning formation formed, but the present invention is not restricted to this.
Chromatic photoresist 23 can be for example red (R) photoresist, green (G) photoresist, blue (B) photoresist.Colourama ancestral 23 is arranged
It is spaced in the second substrate 21 and with black matrix" 22.
Third insulating layer 24 is arranged on chromatic photoresist 23, can be used as flatness layer.In the present embodiment, third insulating layer
24 are formed using organic insulating material, but the present invention is not restricted to this.
After array substrate 10 and CF substrate 20 are to box setting, on the non-via area of second insulating layer 14
Interval body 16 is contacted with third insulating layer 24, i.e., the interval body 16 on the non-via area of second insulating layer 14 is in array
Play main support between substrate 10 and CF substrate 20.Interval body on the non-via area for being located at second insulating layer 14
After 16 are compressed, the interval body 16 in via hole 141 plays a supportive role.
Fig. 2A to Fig. 2 F is the flow chart of the production method of the array substrate of embodiment according to the present invention.
Referring to Fig. 2A, the first insulating layer 12 is formed on first substrate 11.Here, using vapor deposition method first
Deposited silicon nitride film layer on substrate 11, to form the first insulating layer 12.
Referring to Fig. 2 B, metal layer 13 is formed on the first insulating layer 12.Here, using sputtering method in the first insulating layer
Depositing metal membrane layer on 12 then carries out patterned process to metallic diaphragm, to form metal layer 13.
Referring to Fig. 2 C, the second insulating layer 14 of covering metal layer 13 is formed on the first insulating layer 12.Here, using gas
The organic insulating material film layer of phase deposition method overlying deposited metal layer 13 on the first insulating layer 12, to form second insulating layer
14。
Referring to Fig. 2 D, via hole 141 is formed in second insulating layer 14, which exposes metal layer 13.Here, it can adopt
Via hole 141 is formed in second insulating layer 14 with photoetching process.
Referring to Fig. 2 E, conductive layer 15 is formed in second insulating layer 14, wherein conductive layer 15 passes through via hole 141 and metal
Layer 13 contacts.Here, vapor deposition or sputtering technology the depositing indium tin oxide film layer in second insulating layer 14 can be used, from
And form conductive layer 15.
Referring to Fig. 2 F, while being formed on conductive layer 15 and to be located in the non-via area of second insulating layer 14 and via hole
Interval body 16 in 141.Here, it is formed on conductive layer 15 simultaneously using one of light shield and is located at second insulating layer 14
Interval body 16 in non-via area and via hole 141, is compared and the prior art, can be saved one of light shield and first procedure, be subtracted
While few Production Time improves efficiency, reduce the production cost.
In forming process, in the interval body 16 in via hole 141 due to its collapsing in via hole 141, can be located at
Interval body 16 in the non-via area of second insulating layer 14 generates difference in height, to make the non-via hole positioned at second insulating layer 14
Interval body 16 on region is used as master space body, and the interval body 16 being located in via hole 141 is as secondary interval body.
In addition, in the present invention, technique shown in Fig. 2A can be omitted, i.e., metal layer directly is formed on first substrate 11
13。
In an embodiment of the present invention, it can be adjusted by the thickness of the size or second insulating layer 14 that adjust via hole 141
The whole interval body 16 in the non-via area of second insulating layer 14 and the interval body 16 in via hole 141 are between the two
Difference in height.
Although the present invention has shown and described referring to specific embodiment, it should be appreciated by those skilled in the art that:
In the case where not departing from the spirit and scope of the present invention being defined by the claims and their equivalents, can carry out herein form and
Various change in details.
Claims (10)
1. a kind of array substrate, which is characterized in that box is arranged in the array substrate (10) and colored filter substrate (20), with
Liquid crystal display panel is formed, the array substrate (10) includes:
First substrate (11);
The metal layer (13) being arranged on the first substrate (11);
Cover the second insulating layer (14) of the metal layer (13), wherein there is via hole in the second insulating layer (14)
(141), the via hole (141) exposes the metal layer (13);
The conductive layer (15) being arranged on the second insulating layer (14), wherein the conductive layer (15) passes through the via hole
(141) it is contacted with the metal layer (13);
It is arranged on the conductive layer (15) and is located in the non-via area of the second insulating layer (14) and the mistake
Interval body (16) in hole (141).
2. array substrate according to claim 1, which is characterized in that the array substrate (10) further include: be arranged in institute
State the first insulating layer (12) between metal layer (13) and the first substrate (11).
3. array substrate according to claim 1 or 2, which is characterized in that by adjust the via hole (141) size or
The thickness of second insulating layer described in person (14), to adjust the interval body (16) being located in the non-via area and be located at the mistake
The difference in height between interval body (16) in hole (141).
4. a kind of liquid crystal display panel, including the colored filter substrate (20) being oppositely arranged and array substrate (10), which is characterized in that
The array substrate (10) includes:
First substrate (11);
The metal layer (13) being arranged on the first substrate (11);
Cover the second insulating layer (14) of the metal layer (13), wherein there is via hole in the second insulating layer (14)
(141), the via hole (141) exposes the metal layer (13);
The conductive layer (15) being arranged on the second insulating layer (14), wherein the conductive layer (15) passes through the via hole
(141) it is contacted with the metal layer (13);
It is arranged on the conductive layer (15) and is located in the non-via area of the second insulating layer (14) and the mistake
Interval body (16) in hole (141), wherein the interval body (16) in the non-via area contacts the colored filter
Substrate (20).
5. liquid crystal display panel according to claim 4, which is characterized in that the array substrate (10) further include: be arranged in institute
State the first insulating layer (12) between metal layer (13) and the first substrate (11).
6. liquid crystal display panel according to claim 4, which is characterized in that by adjust the via hole (141) size or
The thickness of the second insulating layer (14), to adjust the interval body (16) being located in the non-via area and be located at the via hole
(141) difference in height between interval body (16) in.
7. according to the described in any item liquid crystal display panels of claim 4 to 6, which is characterized in that the colored filter substrate (20)
Include:
The second substrate (21);
The black matrix" (22) being arranged on the second substrate (21);
The chromatic photoresist (23) for being arranged on the second substrate (21) and being spaced with the black matrix" (22);
The third insulating layer (24) being arranged on the chromatic photoresist (23), wherein the interval in the non-via area
Body (16) is contacted with the third insulating layer (24).
8. a kind of production method of array substrate, which is characterized in that the array substrate (10) and colored filter substrate (20)
Box is arranged, to form liquid crystal display panel, the production method of the array substrate (10) includes:
Metal layer (13) are formed on first substrate (11);
Form the second insulating layer (14) for covering the metal layer (13);
Via hole (141) are formed in the second insulating layer (14), wherein the via hole (141) exposes the metal layer (13);
Conductive layer (15) are formed on the second insulating layer (14), wherein the conductive layer (15) passes through the via hole (141)
It is contacted with the metal layer (13);
The non-via area and the mistake for being located at the second insulating layer (14) are formed on the conductive layer (15) simultaneously
Interval body (16) in hole (141).
9. production method according to claim 8, which is characterized in that formed on first substrate (11) metal layer (13) it
Before, the first insulating layer (12) are formed on first substrate (11).
10. production method according to claim 8 or claim 9, which is characterized in that by the size for adjusting the via hole (141)
Or the thickness of the second insulating layer (14), described in adjusting the interval body (16) being located in the non-via area and be located at
The difference in height between interval body (16) in via hole (141).
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CN106125390A (en) | 2016-08-19 | 2016-11-16 | 武汉华星光电技术有限公司 | Display panels and liquid crystal indicator |
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CN102650786B (en) * | 2012-04-27 | 2014-04-02 | 京东方科技集团股份有限公司 | Thin film transistor array substrate and manufacturing method and display device thereof |
CN102967972B (en) * | 2012-11-06 | 2015-03-25 | 北京京东方光电科技有限公司 | Capacitive touch array substrate and manufacturing method thereof and liquid crystal panel |
CN103117248B (en) * | 2013-01-25 | 2015-07-22 | 京东方科技集团股份有限公司 | Array substrate and manufacture method thereof and display device |
CN103901672B (en) * | 2014-03-21 | 2017-08-25 | 京东方科技集团股份有限公司 | A kind of array base palte, liquid crystal panel and display device |
CN104298010A (en) * | 2014-08-28 | 2015-01-21 | 合肥京东方光电科技有限公司 | Display substrate, display substrate manufacturing method and display device |
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