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CN104865756B - Array substrate, display panel and display device - Google Patents

Array substrate, display panel and display device Download PDF

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Publication number
CN104865756B
CN104865756B CN201510152790.XA CN201510152790A CN104865756B CN 104865756 B CN104865756 B CN 104865756B CN 201510152790 A CN201510152790 A CN 201510152790A CN 104865756 B CN104865756 B CN 104865756B
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electrode
substrate
conductive layer
disposed
layer
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CN104865756A (en
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王超
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Tianma Microelectronics Co Ltd
Shanghai Tianma Microelectronics Co Ltd
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Tianma Microelectronics Co Ltd
Shanghai Tianma Microelectronics Co Ltd
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Priority to CN201510152790.XA priority Critical patent/CN104865756B/en
Priority to CN201710804398.8A priority patent/CN107490913B/en
Priority to CN201710804399.2A priority patent/CN107340623B/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明公开了一种阵列基板、显示面板及显示装置,包括显示区域及环绕显示区域的非显示区域,非显示区域包括多条第一电极引线和多条第二电极引线,阵列基板的非显示区域包括:基板;设置于基板表面的第一导电层;设置于第一导电层背离基板一侧的栅介质层;设置于栅介质层背离基板一侧的第二导电层;设置于第二导电层背离基板一侧的隔离层,隔离层的厚度大于栅介质层的厚度,和/或隔离层的介电常数小于栅介质层的介电常数;设置于隔离层背离基板一侧的第三导电层;第一电极引线设置于第一导电层或第二导电层,且第二电极引线设置于第三导电层,通过合理的布线,大大节省阵列基板的布线版图。

The invention discloses an array substrate, a display panel and a display device, comprising a display area and a non-display area surrounding the display area, the non-display area includes a plurality of first electrode leads and a plurality of second electrode leads, and the non-display area of the array substrate The area includes: the substrate; the first conductive layer arranged on the surface of the substrate; the gate dielectric layer arranged on the side of the first conductive layer away from the substrate; the second conductive layer arranged on the side of the gate dielectric layer away from the substrate; The isolation layer on the side away from the substrate, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer; the third conductive layer arranged on the side of the isolation layer away from the substrate layer; the first electrode leads are arranged on the first conductive layer or the second conductive layer, and the second electrode leads are arranged on the third conductive layer, through rational wiring, the wiring layout of the array substrate is greatly saved.

Description

阵列基板、显示面板及显示装置Array substrate, display panel and display device

技术领域technical field

本发明涉及触控显示技术邻域,更为具体的说,涉及一种阵列基板及包括该阵列基板的显示面板及显示装置。The present invention relates to the field of touch display technology, and more specifically, relates to an array substrate, a display panel and a display device including the array substrate.

背景技术Background technique

随着显示技术的发展,液晶显示面板不断得到改善,使得液晶显示面板具有机身薄、省电、无辐射等优点,从而使得液晶显示面板的应用越来越广。阵列基板是液晶显示面板中重要组件之一,其具有集成度高、走线复杂等特点,需要在有限的布线版图内集成各种器件,因此,一种节省布线版图的阵列基板是现今研究人员主要研究项目之一。With the development of the display technology, the liquid crystal display panel has been continuously improved, so that the liquid crystal display panel has the advantages of thin body, power saving, and no radiation, so that the application of the liquid crystal display panel is becoming wider and wider. The array substrate is one of the important components in the liquid crystal display panel. It has the characteristics of high integration and complicated wiring. It needs to integrate various devices in a limited wiring layout. One of the main research projects.

发明内容Contents of the invention

有鉴于此,本发明实施例提供了一种阵列基板、显示面板及显示装置,通过将施加信号有交叠的两个电极引线设置于不同导电层,进而节省了阵列基板的布线版图,以提高阵列基板的利用率。In view of this, an embodiment of the present invention provides an array substrate, a display panel, and a display device. By arranging two overlapping electrode leads for applying signals on different conductive layers, the wiring layout of the array substrate is saved, so as to improve Utilization of the array substrate.

为实现上述目的,本发明实施例提供的技术方案如下:In order to achieve the above object, the technical solutions provided by the embodiments of the present invention are as follows:

一种阵列基板,包括显示区域及环绕所述显示区域的非显示区域,所述非显示区域包括多条第一电极引线和多条第二电极引线,所述阵列基板的非显示区域包括:An array substrate, including a display area and a non-display area surrounding the display area, the non-display area includes a plurality of first electrode leads and a plurality of second electrode leads, and the non-display area of the array substrate includes:

基板;Substrate;

设置于所述基板表面的第一导电层;a first conductive layer disposed on the surface of the substrate;

设置于所述第一导电层背离所述基板一侧的栅介质层;a gate dielectric layer disposed on a side of the first conductive layer away from the substrate;

设置于所述栅介质层背离所述基板一侧的第二导电层;a second conductive layer disposed on a side of the gate dielectric layer away from the substrate;

设置于所述第二导电层背离所述基板一侧的隔离层,所述隔离层的厚度大于所述栅介质层的厚度,和/或所述隔离层的介电常数小于所述栅介质层的介电常数;An isolation layer disposed on the side of the second conductive layer away from the substrate, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than that of the gate dielectric layer The dielectric constant;

以及,设置于所述隔离层背离所述基板一侧的第三导电层;And, a third conductive layer disposed on a side of the isolation layer away from the substrate;

其中,所述第一电极引线设置于所述第一导电层或所述第二导电层,且所述第二电极引线设置于所述第三导电层。Wherein, the first electrode lead is disposed on the first conductive layer or the second conductive layer, and the second electrode lead is disposed on the third conductive layer.

此外,本发明实施例还提供了一种显示面板,包括上述的阵列基板。In addition, an embodiment of the present invention also provides a display panel, including the above-mentioned array substrate.

最后,本发明实施例还提供了一种显示装置,包括上述的显示面板。Finally, an embodiment of the present invention also provides a display device, including the above-mentioned display panel.

相较于现有技术,本发明实施例提供的技术方案至少具体以下优点:Compared with the prior art, the technical solutions provided by the embodiments of the present invention have at least the following advantages:

本发明实施例提供了一种阵列基板、显示面板及显示装置,包括显示区域及环绕所述显示区域的非显示区域,所述非显示区域包括多条第一电极引线和多条第二电极引线,所述阵列基板的非显示区域包括:基板;设置于所述基板表面的第一导电层;设置于所述第一导电层背离所述基板一侧的栅介质层;设置于所述栅介质层背离所述基板一侧的第二导电层;设置于所述第二导电层背离所述基板一侧的隔离层,所述隔离层的厚度大于所述栅介质层的厚度,和/或所述隔离层的介电常数小于所述栅介质层的介电常数;以及,设置于所述隔离层背离所述基板一侧的第三导电层;其中,所述第一电极引线设置于所述第一导电层或所述第二导电层,且所述第二电极引线设置于所述第三导电层。An embodiment of the present invention provides an array substrate, a display panel, and a display device, including a display area and a non-display area surrounding the display area, and the non-display area includes a plurality of first electrode leads and a plurality of second electrode leads , the non-display area of the array substrate includes: a substrate; a first conductive layer arranged on the surface of the substrate; a gate dielectric layer arranged on the side of the first conductive layer away from the substrate; layer away from the second conductive layer on the side of the substrate; an isolation layer disposed on the side of the second conductive layer away from the substrate, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the The dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer; and the third conductive layer is disposed on the side of the isolation layer away from the substrate; wherein, the first electrode lead is disposed on the The first conductive layer or the second conductive layer, and the second electrode leads are arranged on the third conductive layer.

由上述内容可知,本发明实施例提供的技术方案,由于隔离层的厚度大于栅介质层的厚度,和/或隔离层的介电常数小于栅介质层的介电常数,使得第一电极引线和第二电极引线在被同时施加信号时,改善了位于不同导电层的第一电极引线和第二电极引线之间的干扰现象,而后通过合理的布线,可以大大节省阵列基板的布线版图,进而提高了阵列基板的利用率。It can be seen from the above that, in the technical solution provided by the embodiments of the present invention, since the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer, the first electrode lead and When the second electrode leads are applied with signals at the same time, the interference phenomenon between the first electrode leads and the second electrode leads on different conductive layers is improved, and then through reasonable wiring, the wiring layout of the array substrate can be greatly saved, thereby improving The utilization rate of the array substrate is improved.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings on the premise of not paying creative efforts.

图1为现有的一种阵列基板的结构示意图;FIG. 1 is a schematic structural diagram of an existing array substrate;

图2为本申请实施例提供的一种阵列基板的结构示意图;FIG. 2 is a schematic structural diagram of an array substrate provided in an embodiment of the present application;

图3a为图2中沿aa’方向的一种切面图;Fig. 3 a is a kind of sectional view along aa ' direction in Fig. 2;

图3b为图2中沿aa’方向的另一种切面图;Fig. 3b is another kind of sectional view along aa' direction in Fig. 2;

图4a为本申请实施例提供的一种第一电极引线和第二电极引线的布线图;Fig. 4a is a wiring diagram of a first electrode lead and a second electrode lead provided in an embodiment of the present application;

图4b为本申请实施例提供的另一种第一电极引线和第二电极引线的布线图;Fig. 4b is another wiring diagram of the first electrode lead and the second electrode lead provided by the embodiment of the present application;

图5为本申请实施例提供的另一种阵列基板的结构示意图;FIG. 5 is a schematic structural diagram of another array substrate provided by an embodiment of the present application;

图6为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 6 is a schematic structural diagram of another array substrate provided by an embodiment of the present application;

图7为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 7 is a schematic structural diagram of another array substrate provided by an embodiment of the present application;

图8为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 8 is a schematic structural diagram of another array substrate provided by an embodiment of the present application;

图9为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 9 is a schematic structural diagram of another array substrate provided by an embodiment of the present application;

图10为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 10 is a schematic structural diagram of another array substrate provided in the embodiment of the present application;

图11为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 11 is a schematic structural diagram of another array substrate provided in the embodiment of the present application;

图12为本申请实施例提供的又一种阵列基板的结构示意图;FIG. 12 is a schematic structural diagram of another array substrate provided in the embodiment of the present application;

图13为本申请实施例提供的一种阵列基板的触控结构示意图;FIG. 13 is a schematic diagram of a touch control structure of an array substrate provided by an embodiment of the present application;

图14a为图13中沿bb’方向的一种切面图;Fig. 14a is a kind of sectional view along bb ' direction in Fig. 13;

图14b为图13中沿bb’方向的另一种切面图。Fig. 14b is another cross-sectional view along the bb' direction in Fig. 13 .

具体实施方式detailed description

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

正如背景技术所述,由于阵列基板具有集成度高、走线复杂等特点,需要在有限的布线版图内集成各种器件,因此,一种节省布线版图的阵列基板是现今研究人员主要研究项目之一。As mentioned in the background technology, because the array substrate has the characteristics of high integration and complicated wiring, various devices need to be integrated in a limited wiring layout. Therefore, an array substrate that saves wiring layout is one of the main research projects of researchers today. one.

具体的,参考图1所示,为现有的一种阵列基板的结构示意图,其中,阵列基板包括显示区域101和环绕所述显示区域的非显示区域102,显示区域101包括多条栅极线101a和多条数据线101b;非显示区域102包括栅极驱动电路区域102a和台阶区域102b;栅极线101a通过位于栅极驱动电路区域102a内的栅极线引线101a’引出,而数据线101b通过位于台阶区域102b内的数据线引线101b’引出,由于相邻数据线引线101b’需要同时施加信号,因此为了避免相邻数据线引线101b’之间信号相互干扰,将相邻数据线引线101b’间的距离拉大,进而增大了阵列基板的布线版图。Specifically, as shown in FIG. 1 , it is a schematic structural diagram of an existing array substrate, wherein the array substrate includes a display area 101 and a non-display area 102 surrounding the display area, and the display area 101 includes a plurality of gate lines 101a and a plurality of data lines 101b; the non-display area 102 includes a gate drive circuit area 102a and a step area 102b; Leading out through the data line leads 101b' located in the stepped area 102b, since adjacent data line leads 101b' need to apply signals at the same time, in order to avoid signal interference between adjacent data line leads 101b', the adjacent data line leads 101b The distance between 'is enlarged, thereby increasing the wiring layout of the array substrate.

基于此,本申请实施例提供了一种阵列基板,通过将被施加信号时段有交叠的两个电极引线设置于不同导电层,并通过合理布线,以节省阵列基板的布线版图,提高阵列基板的利用率。具体结合图2至图14b所示,对本申请实施例提供的阵列基板进行详细的说明。Based on this, an embodiment of the present application provides an array substrate, by arranging two electrode leads with overlapping signal application periods on different conductive layers, and through rational wiring, the wiring layout of the array substrate can be saved, and the array substrate can be improved. utilization rate. Specifically referring to FIG. 2 to FIG. 14 b , the array substrate provided by the embodiment of the present application will be described in detail.

结合图2、图3a和图3b所示,图2为本申请实施例提供的一种阵列基板的结构示意图,图3a为图2中沿aa’方向的一种切面图,图3b为图2中沿aa’方向的另一种切面图,其中,阵列基板包括:In combination with Figure 2, Figure 3a and Figure 3b, Figure 2 is a schematic structural diagram of an array substrate provided by an embodiment of the present application, Figure 3a is a cut-away view along the aa' direction in Figure 2, and Figure 3b is a cross-sectional view of Figure 2 Another sectional view along the aa' direction in , wherein the array substrate includes:

显示区域10;display area 10;

及环绕显示区域10的非显示区域20,非显示区域20包括多条第一电极引线20a和多条第二电极引线20b,且第一电极引线20a和第二电极引线20b被施加信号的时段有交叠,阵列基板的非显示区域包括:and a non-display area 20 surrounding the display area 10, the non-display area 20 includes a plurality of first electrode leads 20a and a plurality of second electrode leads 20b, and the period during which signals are applied to the first electrode leads 20a and the second electrode leads 20b is Overlapping, the non-display area of the array substrate includes:

基板100;Substrate 100;

设置于基板100表面的第一导电层200;a first conductive layer 200 disposed on the surface of the substrate 100;

设置于第一导电层200背离基板100一侧的栅介质层300;The gate dielectric layer 300 disposed on the side of the first conductive layer 200 away from the substrate 100;

设置于栅介质层300背离基板100一侧的第二导电层400;The second conductive layer 400 disposed on the side of the gate dielectric layer 300 away from the substrate 100;

设置于第二导电层400背离基板100一侧的隔离层500,隔离层的厚度大于栅介质层的厚度,和/或隔离层的介电常数小于栅介质层的介电常数;The isolation layer 500 disposed on the side of the second conductive layer 400 away from the substrate 100, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer;

以及,设置于隔离层500背离基板100一侧的第三导电层600;And, the third conductive layer 600 disposed on the side of the isolation layer 500 away from the substrate 100;

其中,第一电极引线20a设置于第一导电层200或第二导电层400,且第二电极引线20b设置于第三导电层600。Wherein, the first electrode lead 20 a is disposed on the first conductive layer 200 or the second conductive layer 400 , and the second electrode lead 20 b is disposed on the third conductive layer 600 .

即,参考图3a所示,第一电极引线20a设置于第一导电层200,且第二电极引线20b设置于第三导电层600;That is, referring to FIG. 3a, the first electrode lead 20a is disposed on the first conductive layer 200, and the second electrode lead 20b is disposed on the third conductive layer 600;

以及,参考图3b所示,第一电极引线20a设置于第二导电层400,且第二电极引线20b设置于第三导电层600。And, referring to FIG. 3 b , the first electrode lead 20 a is disposed on the second conductive layer 400 , and the second electrode lead 20 b is disposed on the third conductive layer 600 .

需要说明的是,上述所述的隔离层的厚度大于栅介质层的厚度,和/或隔离层的介电常数小于栅介质层的介电常数中,包括三种情况,即,第一种为隔离层的厚度大于栅介质层的厚度,且隔离层的介电常数小于栅介质层的介电常数;第二种为在栅介质层和隔离层的厚度相同时,隔离层的介电常数小于栅介质层的介电常数;以及,第三种为在隔离层的介电常数与栅介质层的介电常数相同时,隔离层的厚度大于栅介质层的厚度。本申请实施例优选的隔离层的厚度不小于1.8微米。It should be noted that the above mentioned isolation layer has a thickness greater than that of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer, including three situations, that is, the first one is The thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer; the second is that when the thickness of the gate dielectric layer and the isolation layer are the same, the dielectric constant of the isolation layer is less than The dielectric constant of the gate dielectric layer; and, the third type is that when the dielectric constant of the isolation layer is the same as that of the gate dielectric layer, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer. The preferred thickness of the isolation layer in the embodiment of the present application is not less than 1.8 microns.

对于本申请实施例提供的第一电极引线和第二电极引线可以任意设置,最为优选的,沿阵列基板的透光方向,第一电极引线和第二电极引线之间具有交叠区域。具体的,参考图4a所示,为本申请实施例提供的一种第一电极引线和第二电极引线的布线图,其中,第一电极引线20a和第二电极引线20b之间具有交叠区域,且第一电极引线20a和第二电极引线20b的延伸方向相同。即沿任意一电极引线的延伸方向,一电极引线能够覆盖部分另一电极引线;或者,沿任意一电极引线的延伸方向,一电极引线能够全部覆盖另一电极引线;The first electrode leads and the second electrode leads provided in the embodiment of the present application can be arranged arbitrarily, and most preferably, along the light transmission direction of the array substrate, there is an overlapping area between the first electrode leads and the second electrode leads. Specifically, referring to FIG. 4a, it is a wiring diagram of a first electrode lead and a second electrode lead provided by an embodiment of the present application, wherein there is an overlapping area between the first electrode lead 20a and the second electrode lead 20b , and the extending direction of the first electrode lead 20a and the second electrode lead 20b are the same. That is, along the extension direction of any electrode lead, one electrode lead can cover part of the other electrode lead; or, along the extension direction of any electrode lead, one electrode lead can completely cover the other electrode lead;

此外,参考图4b所示,为本申请实施例提供的另一种第一电极引线和第二电极引线的布线图,其中,第一电极引线20a和第二电极引线20b之间具有交叠区域,且第一电极引线20a和第二电极引线20b的延伸方向之间具有夹角,其中,夹角可以为45度、60度等任意度数,对此不作限制。In addition, as shown in FIG. 4b, another wiring diagram of the first electrode lead and the second electrode lead provided by the embodiment of the present application, wherein there is an overlapping area between the first electrode lead 20a and the second electrode lead 20b , and there is an included angle between the extension directions of the first electrode lead 20a and the second electrode lead 20b, wherein the included angle can be any number of degrees such as 45 degrees, 60 degrees, etc., without limitation.

需要说明的是,本申请实施例对于第一电极引线和第二电极引线之间的布线结构不作具体限制,需要根据实际的应用进行设计,进而通过合理布线,以缩小阵列基板的布线版图。另外,为了保持第一电极引线和第二电极引线传输信号的一致性,本申请实施例提供的第一电极引线和第二电极引线的电阻相同。It should be noted that the embodiment of the present application does not specifically limit the wiring structure between the first electrode lead and the second electrode lead, and it needs to be designed according to the actual application, and then the wiring layout of the array substrate can be reduced through reasonable wiring. In addition, in order to maintain the consistency of signal transmission between the first electrode lead and the second electrode lead, the resistances of the first electrode lead and the second electrode lead provided in the embodiment of the present application are the same.

进一步的,参考图5所示,为本申请实施例提供的另一种阵列基板的结构示意图,其中,非显示区域20包括栅极驱动电路区域21和台阶区域22,其中,Further, referring to FIG. 5 , which is a schematic structural diagram of another array substrate provided by the embodiment of the present application, wherein the non-display area 20 includes a gate drive circuit area 21 and a step area 22, wherein,

位于栅极驱动电路区域21包括多条栅极线引线21a,每一条栅极线21a引线分别与阵列基板的一栅极线10a相连;The gate drive circuit area 21 includes a plurality of gate line leads 21a, and each gate line 21a lead is respectively connected to a gate line 10a of the array substrate;

且位于台阶区域22包括多条数据线引线22a,每一条数据线引线22a分别与阵列基板的一数据线10b相连;And the stepped area 22 includes a plurality of data line leads 22a, and each data line lead 22a is respectively connected to a data line 10b of the array substrate;

其中,第一电极引线20a和第二电极引线20b均为栅极线引线或数据线引线。Wherein, the first electrode leads 20 a and the second electrode leads 20 b are gate line leads or data line leads.

对于本申请实施例提供的阵列基板,本申请对其类型不作具体限制,其中,对于阵列基板的晶体管可以为底栅型晶体管,也可为顶栅型晶体管,具体结合图6和图7所示,对本申请实施例提供的阵列基板进行详细说明,需要说明的是,图6和图7均以基于图3a或图3b提供的阵列基板为例进行说明。For the array substrate provided in the embodiment of the present application, the present application does not specifically limit its type, wherein the transistors on the array substrate can be bottom-gate transistors or top-gate transistors, as shown in Figure 6 and Figure 7 , the array substrate provided by the embodiment of the present application will be described in detail. It should be noted that both FIG. 6 and FIG. 7 take the array substrate provided based on FIG. 3 a or FIG. 3 b as an example for illustration.

其中,阵列基板的晶体管可以为底栅型晶体管,参考图6所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,阵列基板的第一导电层200包括栅极G,第二导电层400包括源漏极(其中,包括源极S和漏极D),阵列基板包括:Wherein, the transistors of the array substrate may be bottom-gate transistors, as shown in FIG. 6 , which is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein the first conductive layer 200 of the array substrate includes a gate G, The second conductive layer 400 includes source and drain (including source S and drain D), and the array substrate includes:

设置于栅介质层300和第二导电层400之间的半导体层700,半导体层700包括有源区A,其中,栅极G、源漏极(源极S和漏极D)和有源区A形成薄膜晶体管。The semiconductor layer 700 disposed between the gate dielectric layer 300 and the second conductive layer 400, the semiconductor layer 700 includes an active region A, wherein the gate G, source and drain (source S and drain D) and the active region A forms a thin film transistor.

或者,阵列基板的晶体管可以为顶栅型晶体管,参考图7所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,阵列基板的第一导电层200包括栅极G,第二导电层400包括源漏极(其中,包括源极S和漏极D),阵列基板包括:Alternatively, the transistors of the array substrate may be top-gate transistors, as shown in FIG. 7 , which is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein the first conductive layer 200 of the array substrate includes a gate G, The second conductive layer 400 includes source and drain (including source S and drain D), and the array substrate includes:

设置于基板100与第一导电层200之间的半导体层700,半导体层700包括有源区A;以及,设置于半导体层700和第一导电层200之间的栅绝缘层301,其中,栅极G、源漏极(其中,包括源极S和漏极D)和有源区A形成薄膜晶体管。A semiconductor layer 700 disposed between the substrate 100 and the first conductive layer 200, the semiconductor layer 700 includes an active region A; and a gate insulating layer 301 disposed between the semiconductor layer 700 and the first conductive layer 200, wherein the gate G, source and drain (including source S and drain D) and active region A form a thin film transistor.

此外,本申请对于阵列基板的公共电极和像素电极的位置同样不作具体限制,具体结合图8至图12所示,对本申请实施例提供的阵列基板进行详细的描述。In addition, the present application also does not specifically limit the positions of the common electrode and the pixel electrode of the array substrate. Specifically, referring to FIG. 8 to FIG. 12 , the array substrate provided by the embodiment of the present application will be described in detail.

参考图8所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,Referring to FIG. 8 , it is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein,

阵列基板包括:基板100、第一导电层200、栅介质层300、第二导电层400;The array substrate includes: a substrate 100, a first conductive layer 200, a gate dielectric layer 300, and a second conductive layer 400;

设置于第二导电层400背离基板100一侧的第一绝缘层801;The first insulating layer 801 disposed on the side of the second conductive layer 400 away from the substrate 100;

设置于第一绝缘层801背离基板100一侧的第一电极802;a first electrode 802 disposed on a side of the first insulating layer 801 away from the substrate 100;

设置于第一电极802背离基板100一侧的第二绝缘层803;a second insulating layer 803 disposed on the side of the first electrode 802 away from the substrate 100;

设置于第二绝缘层803背离基板100一侧的第二电极804;a second electrode 804 disposed on a side of the second insulating layer 803 away from the substrate 100;

设置于第二电极804背离基板100一侧的第三绝缘层805;a third insulating layer 805 disposed on the side of the second electrode 804 away from the substrate 100;

以及,设置于第三绝缘层805背离基板100一侧的第三导电层600;And, the third conductive layer 600 disposed on the side of the third insulating layer 805 facing away from the substrate 100;

其中,隔离层包括第一绝缘层、第二绝缘层和第三绝缘层。Wherein, the isolation layer includes a first insulating layer, a second insulating layer and a third insulating layer.

或者,参考图9所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,阵列基板包括:基板100、第一导电层200、栅介质层300、第二导电层400;Alternatively, refer to FIG. 9 , which is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein the array substrate includes: a substrate 100 , a first conductive layer 200 , a gate dielectric layer 300 , and a second conductive layer 400 ;

设置于第二导电层400背离基板100一侧的第一绝缘层801;The first insulating layer 801 disposed on the side of the second conductive layer 400 away from the substrate 100;

设置于第一绝缘层801背离基板100一侧的第一电极802;a first electrode 802 disposed on a side of the first insulating layer 801 away from the substrate 100;

设置于第一电极802背离基板100一侧的第二绝缘层803;a second insulating layer 803 disposed on the side of the first electrode 802 away from the substrate 100;

设置于第二绝缘层803背离基板100一侧的第三导电层600;The third conductive layer 600 disposed on the side of the second insulating layer 803 away from the substrate 100;

设置于第三导电层600背离基板100一侧的第三绝缘层805;The third insulating layer 805 disposed on the side of the third conductive layer 600 away from the substrate 100;

以及,设置于第三绝缘层805背离基板100一侧的第二电极804;And, the second electrode 804 disposed on the side of the third insulating layer 805 facing away from the substrate 100;

其中,隔离层包括第一绝缘层和第二绝缘层。Wherein, the isolation layer includes a first insulating layer and a second insulating layer.

或者,参考图10所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,阵列基板包括:基板100、第一导电层200、栅介质层300、第二导电层400;Alternatively, refer to FIG. 10 , which is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein the array substrate includes: a substrate 100 , a first conductive layer 200 , a gate dielectric layer 300 , and a second conductive layer 400 ;

设置于第二导电层400背离基板100一侧的第一绝缘层801;The first insulating layer 801 disposed on the side of the second conductive layer 400 away from the substrate 100;

设置于第一绝缘层801背离基板100一侧的第三导电层600;The third conductive layer 600 disposed on the side of the first insulating layer 801 away from the substrate 100;

设置于第三导电层600背离基板100一侧的第二绝缘层803;The second insulating layer 803 disposed on the side of the third conductive layer 600 away from the substrate 100;

设置于第二绝缘层803背离基板100一侧的第一电极802;The first electrode 802 disposed on the side of the second insulating layer 803 away from the substrate 100;

设置于第一电极802背离基板100一侧的第三绝缘层805;a third insulating layer 805 disposed on the side of the first electrode 802 away from the substrate 100;

以及,设置于第三绝缘层805背离基板100一侧的第二电极804;And, the second electrode 804 disposed on the side of the third insulating layer 805 facing away from the substrate 100;

其中,隔离层包括第一绝缘层。Wherein, the isolation layer includes a first insulating layer.

或者,参考图11所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,阵列基板包括:基板100、第一导电层200、栅介质层300、第二导电层400;Alternatively, refer to FIG. 11 , which is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein the array substrate includes: a substrate 100 , a first conductive layer 200 , a gate dielectric layer 300 , and a second conductive layer 400 ;

设置于第二导电层400背离基板100一侧的第一绝缘层801;The first insulating layer 801 disposed on the side of the second conductive layer 400 away from the substrate 100;

设置于第一绝缘层801背离基板100一侧的驱动电极806,驱动电极806包括第一电极和第二电极;The driving electrode 806 disposed on the side of the first insulating layer 801 away from the substrate 100, the driving electrode 806 includes a first electrode and a second electrode;

设置于驱动电极802背离基板100一侧的第二绝缘层803;a second insulating layer 803 disposed on the side of the driving electrode 802 away from the substrate 100;

以及,设置于驱动电极803背离基板100一侧的第三导电层600;And, the third conductive layer 600 disposed on the side of the driving electrode 803 away from the substrate 100;

其中,隔离层包括第一绝缘层和第二绝缘层。Wherein, the isolation layer includes a first insulating layer and a second insulating layer.

或者,参考图12所示,为本申请实施例提供的又一种阵列基板的结构示意图,其中,阵列基板包括:基板100、第一导电层200、栅介质层300、第二导电层400;Alternatively, refer to FIG. 12 , which is a schematic structural diagram of another array substrate provided by an embodiment of the present application, wherein the array substrate includes: a substrate 100 , a first conductive layer 200 , a gate dielectric layer 300 , and a second conductive layer 400 ;

设置于第二导电层400背离基板100一侧的第一绝缘层801;The first insulating layer 801 disposed on the side of the second conductive layer 400 away from the substrate 100;

设置于第一绝缘层801背离基板100一侧的第三导电层600;The third conductive layer 600 disposed on the side of the first insulating layer 801 away from the substrate 100;

设置于第三导电层600背离基板100一侧的第二绝缘层803;The second insulating layer 803 disposed on the side of the third conductive layer 600 away from the substrate 100;

以及,设置于第二绝缘层803背离基板100一侧的驱动电极806,驱动电极806包括第一电极和第二电极;And, the driving electrode 806 disposed on the side of the second insulating layer 803 away from the substrate 100, the driving electrode 806 includes a first electrode and a second electrode;

其中,隔离层包括第一绝缘层。Wherein, the isolation layer includes a first insulating layer.

在上述内容中,本申请实施例可以设置第一电极为公共电极,第二电极为像素电极;或者,第一电极为像素电极,第二电极为公共电极。In the above, in the embodiment of the present application, the first electrode may be a common electrode, and the second electrode may be a pixel electrode; or, the first electrode may be a pixel electrode, and the second electrode may be a common electrode.

进一步的,本申请实施例提供的阵列基板可以为自电容触控阵列基板,参考图13所示,为本申请实施例提供的一种阵列基板的触控结构示意图,其中,阵列基板的公共电极被分割为多个相互独立的触控电极201;Further, the array substrate provided by the embodiment of the present application may be a self-capacitance touch array substrate. Referring to FIG. Divided into multiple independent touch electrodes 201;

设置于显示区域10的多条触控线202,每一触控线202分别与一触控电极201电性连接;A plurality of touch lines 202 arranged in the display area 10, each touch line 202 is electrically connected to a touch electrode 201;

其中,触控电极201在显示阶段被施加公共电压,且触控电极在触控阶段被施加触控检测信号;Wherein, the common voltage is applied to the touch electrode 201 in the display stage, and the touch detection signal is applied to the touch electrode in the touch stage;

其中,触控线202设置于第三导电层。Wherein, the touch wire 202 is disposed on the third conductive layer.

可选的,位于非显示区域20,包括:多条触控线引线203,每一触控线引线203分别与一触控线202相连;Optionally, located in the non-display area 20, including: a plurality of touch wire leads 203, each touch wire lead 203 is respectively connected to a touch wire 202;

其中,参考图14a所示,为图13中沿bb’方向的一种切面图,其中,基于图3a对图14a进行说明,当第一电极引线20a设置于第一导电层200时,触控线引线203设置于第二导电层400,且触控线引线与触控线采用过孔方式电性连接;Wherein, referring to FIG. 14a, it is a cross-sectional view along the bb' direction in FIG. 13, wherein, FIG. 14a is described based on FIG. The wire leads 203 are disposed on the second conductive layer 400, and the touch wire leads and the touch wires are electrically connected through via holes;

或者,参考图14b所示,为图13中沿bb’方向的另一种切面图,其中,基于图3b对图14b进行说明,当第一电极引线20a设置于第二导电层400时,触控线引线203设置于第一导电层200,且触控线引线203与触控线采用过孔方式电性连接。其中,上述的第一电极引线、第二电极引线和触控电极引线均可以交叠,节省引线占用面积,提高了阵列基板的利用率。Or, referring to FIG. 14b, which is another cross-sectional view along the bb' direction in FIG. 13, wherein FIG. 14b is described based on FIG. The control wire leads 203 are disposed on the first conductive layer 200 , and the touch wire leads 203 are electrically connected to the touch wires through via holes. Wherein, the above-mentioned first electrode leads, second electrode leads and touch electrode leads can all overlap, which saves the area occupied by the leads and improves the utilization rate of the array substrate.

此外,本申请实施例还提供了一种显示面板,包括上述任意一实施例提供的阵列基板。In addition, an embodiment of the present application further provides a display panel, including the array substrate provided in any one of the above embodiments.

最后,本申请实施例还提供了一种显示装置,包括上述实施例提供的显示面板。Finally, an embodiment of the present application further provides a display device, including the display panel provided in the foregoing embodiment.

本申请实施例提供了一种阵列基板、显示面板及显示装置,包括显示区域及环绕所述显示区域的非显示区域,所述非显示区域包括多条第一电极引线和多条第二电极引线,且所述第一电极引线和第二电极引线被施加信号的时段有交叠,所述阵列基板的非显示区域包括:基板;设置于所述基板表面的第一导电层;设置于所述第一导电层背离所述基板一侧的栅介质层;设置于所述栅介质层背离所述基板一侧的第二导电层;设置于所述第二导电层背离所述基板一侧的隔离层,所述隔离层的厚度大于所述栅介质层的厚度,和/或所述隔离层的介电常数小于所述栅介质层的介电常数;以及,设置于所述隔离层背离所述基板一侧的第三导电层;其中,所述第一电极引线设置于所述第一导电层或所述第二导电层,且所述第二电极引线设置于所述第三导电层。Embodiments of the present application provide an array substrate, a display panel, and a display device, including a display area and a non-display area surrounding the display area, and the non-display area includes a plurality of first electrode leads and a plurality of second electrode leads , and the periods during which signals are applied to the first electrode leads and the second electrode leads overlap, the non-display area of the array substrate includes: a substrate; a first conductive layer disposed on the surface of the substrate; disposed on the The gate dielectric layer on the side of the first conductive layer away from the substrate; the second conductive layer arranged on the side of the gate dielectric layer away from the substrate; the isolation layer arranged on the side of the second conductive layer away from the substrate layer, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer; and, the isolation layer is arranged away from the A third conductive layer on one side of the substrate; wherein, the first electrode lead is disposed on the first conductive layer or the second conductive layer, and the second electrode lead is disposed on the third conductive layer.

由上述内容可知,本申请实施例提供的技术方案,由于隔离层的厚度大于栅介质层的厚度,和/或隔离层的介电常数小于栅介质层的介电常数,使得第一电极引线和第二电极引线在被同时施加信号时,改善了位于不同导电层的第一电极引线和第二电极引线之间的干扰现象,而后通过合理的布线,可以大大节省阵列基板的布线版图,进而提高了阵列基板的利用率。It can be seen from the above that, in the technical solution provided by the embodiment of the present application, since the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than the dielectric constant of the gate dielectric layer, the first electrode lead and When the second electrode leads are applied with signals at the same time, the interference phenomenon between the first electrode leads and the second electrode leads on different conductive layers is improved, and then through reasonable wiring, the wiring layout of the array substrate can be greatly saved, thereby improving The utilization rate of the array substrate is improved.

对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (19)

1.一种阵列基板,包括显示区域及环绕所述显示区域的非显示区域,所述非显示区域包括多条第一电极引线和多条第二电极引线,其特征在于,所述阵列基板的非显示区域包括:1. An array substrate, comprising a display area and a non-display area surrounding the display area, the non-display area includes a plurality of first electrode leads and a plurality of second electrode leads, characterized in that the array substrate Non-display areas include: 基板;Substrate; 设置于所述基板表面的第一导电层;a first conductive layer disposed on the surface of the substrate; 设置于所述第一导电层背离所述基板一侧的栅介质层;a gate dielectric layer disposed on a side of the first conductive layer away from the substrate; 设置于所述栅介质层背离所述基板一侧的第二导电层;a second conductive layer disposed on a side of the gate dielectric layer away from the substrate; 设置于所述第二导电层背离所述基板一侧的隔离层,所述隔离层的厚度大于所述栅介质层的厚度,和/或所述隔离层的介电常数小于所述栅介质层的介电常数;An isolation layer disposed on the side of the second conductive layer away from the substrate, the thickness of the isolation layer is greater than the thickness of the gate dielectric layer, and/or the dielectric constant of the isolation layer is smaller than that of the gate dielectric layer The dielectric constant; 以及,设置于所述隔离层背离所述基板一侧的第三导电层;And, a third conductive layer disposed on a side of the isolation layer away from the substrate; 其中,所述第一电极引线设置于所述第一导电层或所述第二导电层,且所述第二电极引线设置于所述第三导电层。Wherein, the first electrode lead is disposed on the first conductive layer or the second conductive layer, and the second electrode lead is disposed on the third conductive layer. 2.根据权利要求1所述的阵列基板,其特征在于,沿所述阵列基板的透光方向,所述第一电极引线和第二电极引线之间具有交叠区域。2 . The array substrate according to claim 1 , wherein there is an overlapping area between the first electrode leads and the second electrode leads along the light transmission direction of the array substrate. 3.根据权利要求2所述的阵列基板,其特征在于,所述第一电极引线和第二电极引线的延伸方向相同。3. The array substrate according to claim 2, wherein the extending direction of the first electrode lead and the second electrode lead are the same. 4.根据权利要求2所述的阵列基板,其特征在于,所述第一电极引线和第二电极引线的延伸方向之间具有夹角。4 . The array substrate according to claim 2 , wherein there is an included angle between the extending directions of the first electrode lead and the second electrode lead. 5.根据权利要求1所述的阵列基板,其特征在于,所述第一电极引线和第二电极引线的电阻相同。5. The array substrate according to claim 1, wherein the resistance of the first electrode lead and the second electrode lead are the same. 6.根据权利要求1所述的阵列基板,其特征在于,所述非显示区域包括栅极驱动电路区域和台阶区域,其中,6. The array substrate according to claim 1, wherein the non-display area comprises a gate drive circuit area and a step area, wherein, 位于所述栅极驱动电路区域包括多条栅极线引线,每一条栅极线引线分别与所述阵列基板的一栅极线相连;The area of the gate driving circuit includes a plurality of gate line leads, and each gate line lead is respectively connected to a gate line of the array substrate; 且位于所述台阶区域包括多条数据线引线,每一条数据线引线分别与所述阵列基板的一数据线相连;And the stepped area includes a plurality of data line leads, each data line lead is respectively connected to a data line of the array substrate; 其中,所述第一电极引线和第二电极引线均为栅极线引线或数据线引线。Wherein, the first electrode leads and the second electrode leads are both gate line leads or data line leads. 7.根据权利要求1所述的阵列基板,其特征在于,所述隔离层的厚度不小于1.8微米。7. The array substrate according to claim 1, wherein the thickness of the isolation layer is not less than 1.8 microns. 8.根据权利要求1所述的阵列基板,其特征在于,所述第一导电层包括栅极,所述第二导电层包括源漏极,所述阵列基板包括:8. The array substrate according to claim 1, wherein the first conductive layer comprises a gate, the second conductive layer comprises a source and drain, and the array substrate comprises: 设置于所述栅介质层和所述第二导电层之间的半导体层,所述半导体层包括有源区,其中,所述栅极、源漏极和有源区形成薄膜晶体管。A semiconductor layer disposed between the gate dielectric layer and the second conductive layer, the semiconductor layer includes an active region, wherein the gate, source and drain and the active region form a thin film transistor. 9.根据权利要求1所述的阵列基板,其特征在于,所述第一导电层包括栅极,所述第二导电层包括源漏极,所述阵列基板包括:9. The array substrate according to claim 1, wherein the first conductive layer comprises a gate, the second conductive layer comprises a source and drain, and the array substrate comprises: 设置于所述基板与所述第一导电层之间的半导体层,所述半导体层包括有源区;以及,设置于所述半导体层和所述第一导电层之间的栅绝缘层。a semiconductor layer disposed between the substrate and the first conductive layer, the semiconductor layer including an active region; and a gate insulating layer disposed between the semiconductor layer and the first conductive layer. 10.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板包括:所述基板、第一导电层、栅介质层、第二导电层;10. The array substrate according to claim 1, wherein the array substrate comprises: the substrate, a first conductive layer, a gate dielectric layer, and a second conductive layer; 设置于所述第二导电层背离所述基板一侧的第一绝缘层;a first insulating layer disposed on a side of the second conductive layer away from the substrate; 设置于所述第一绝缘层背离所述基板一侧的第一电极;a first electrode disposed on a side of the first insulating layer away from the substrate; 设置于所述第一电极背离所述基板一侧的第二绝缘层;a second insulating layer disposed on a side of the first electrode away from the substrate; 设置于所述第二绝缘层背离所述基板一侧的第二电极;a second electrode disposed on a side of the second insulating layer away from the substrate; 设置于所述第二电极背离所述基板一侧的第三绝缘层;a third insulating layer disposed on a side of the second electrode away from the substrate; 以及,设置于所述第三绝缘层背离所述基板一侧的所述第三导电层;And, the third conductive layer is disposed on the side of the third insulating layer away from the substrate; 其中,所述隔离层包括所述第一绝缘层、第二绝缘层和第三绝缘层。Wherein, the isolation layer includes the first insulating layer, the second insulating layer and the third insulating layer. 11.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板包括:所述基板、第一导电层、栅介质层、第二导电层;11. The array substrate according to claim 1, wherein the array substrate comprises: the substrate, a first conductive layer, a gate dielectric layer, and a second conductive layer; 设置于所述第二导电层背离所述基板一侧的第一绝缘层;a first insulating layer disposed on a side of the second conductive layer away from the substrate; 设置于所述第一绝缘层背离所述基板一侧的第一电极;a first electrode disposed on a side of the first insulating layer away from the substrate; 设置于所述第一电极背离所述基板一侧的第二绝缘层;a second insulating layer disposed on a side of the first electrode away from the substrate; 设置于所述第二绝缘层背离所述基板一侧的所述第三导电层;the third conductive layer disposed on the side of the second insulating layer facing away from the substrate; 设置于所述第三导电层背离所述基板一侧的第三绝缘层;a third insulating layer disposed on a side of the third conductive layer away from the substrate; 以及,设置于所述第三绝缘层背离所述基板一侧的第二电极;And, a second electrode disposed on a side of the third insulating layer away from the substrate; 其中,所述隔离层包括所述第一绝缘层和第二绝缘层。Wherein, the isolation layer includes the first insulating layer and the second insulating layer. 12.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板包括:所述基板、第一导电层、栅介质层、第二导电层;12. The array substrate according to claim 1, wherein the array substrate comprises: the substrate, a first conductive layer, a gate dielectric layer, and a second conductive layer; 设置于所述第二导电层背离所述基板一侧的第一绝缘层;a first insulating layer disposed on a side of the second conductive layer away from the substrate; 设置于所述第一绝缘层背离所述基板一侧的第三导电层;a third conductive layer disposed on a side of the first insulating layer away from the substrate; 设置于所述第三导电层背离所述基板一侧的第二绝缘层;a second insulating layer disposed on a side of the third conductive layer away from the substrate; 设置于所述第二绝缘层背离所述基板一侧的第一电极;a first electrode disposed on a side of the second insulating layer away from the substrate; 设置于所述第一电极背离所述基板一侧的第三绝缘层;a third insulating layer disposed on a side of the first electrode away from the substrate; 以及,设置于所述第三绝缘层背离所述基板一侧的第二电极;And, a second electrode disposed on a side of the third insulating layer away from the substrate; 其中,所述隔离层包括所述第一绝缘层。Wherein, the isolation layer includes the first insulating layer. 13.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板包括:所述基板、第一导电层、栅介质层、第二导电层;13. The array substrate according to claim 1, wherein the array substrate comprises: the substrate, a first conductive layer, a gate dielectric layer, and a second conductive layer; 设置于所述第二导电层背离所述基板一侧的第一绝缘层;a first insulating layer disposed on a side of the second conductive layer away from the substrate; 设置于所述第一绝缘层背离所述基板一侧的驱动电极,所述驱动电极包括第一电极和第二电极;a driving electrode disposed on a side of the first insulating layer away from the substrate, the driving electrode comprising a first electrode and a second electrode; 设置于所述驱动电极背离所述基板一侧的第二绝缘层;a second insulating layer disposed on a side of the driving electrode away from the substrate; 以及,设置于所述驱动电极背离所述基板一侧的所述第三导电层;And, the third conductive layer is disposed on the side of the driving electrode away from the substrate; 其中,所述隔离层包括所述第一绝缘层和第二绝缘层。Wherein, the isolation layer includes the first insulating layer and the second insulating layer. 14.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板包括:所述基板、第一导电层、栅介质层、第二导电层;14. The array substrate according to claim 1, wherein the array substrate comprises: the substrate, a first conductive layer, a gate dielectric layer, and a second conductive layer; 设置于所述第二导电层背离所述基板一侧的第一绝缘层;a first insulating layer disposed on a side of the second conductive layer away from the substrate; 设置于所述第一绝缘层背离所述基板一侧的所述第三导电层;the third conductive layer disposed on the side of the first insulating layer facing away from the substrate; 设置于所述第三导电层背离所述基板一侧的第二绝缘层;a second insulating layer disposed on a side of the third conductive layer away from the substrate; 以及,设置于所述第二绝缘层背离所述基板一侧的驱动电极,所述驱动电极包括第一电极和第二电极;And, a driving electrode disposed on a side of the second insulating layer away from the substrate, the driving electrode includes a first electrode and a second electrode; 其中,所述隔离层包括所述第一绝缘层。Wherein, the isolation layer includes the first insulating layer. 15.根据权利要求10~14任意一项所述的阵列基板,其特征在于,所述第一电极为公共电极,所述第二电极为像素电极;15. The array substrate according to any one of claims 10-14, wherein the first electrode is a common electrode, and the second electrode is a pixel electrode; 或者,所述第一电极为像素电极,所述第二电极为公共电极。Alternatively, the first electrode is a pixel electrode, and the second electrode is a common electrode. 16.根据权利要求15所述的阵列基板,其特征在于,所述公共电极被分割为多个相互独立的触控电极;16. The array substrate according to claim 15, wherein the common electrode is divided into a plurality of mutually independent touch electrodes; 设置于所述显示区域的多条触控线,每一触控线分别与一触控电极电性连接;a plurality of touch lines arranged in the display area, each touch line is electrically connected to a touch electrode; 其中,所述触控电极在显示阶段被施加公共电压,且所述触控电极在触控阶段被施加触控检测信号;Wherein, the touch electrodes are applied with a common voltage during the display phase, and the touch detection signals are applied with the touch electrodes during the touch phase; 其中,所述触控线设置于所述第三导电层。Wherein, the touch wire is disposed on the third conductive layer. 17.根据权利要求16所述的阵列基板,其特征在于,位于所述非显示区域,包括:多条触控线引线,每一触控线引线分别与一触控线相连;17. The array substrate according to claim 16, wherein the non-display area comprises: a plurality of touch wire leads, each of which is connected to a touch wire; 其中,当所述第一电极引线设置于所述第一导电层时,所述触控线引线设置于所述第二导电层,且所述触控线引线与所述触控线采用过孔方式电性连接;Wherein, when the first electrode leads are arranged on the first conductive layer, the touch wire leads are arranged on the second conductive layer, and the touch wire leads and the touch wires use via holes way of electrical connection; 或者,当所述第一电极引线设置于所述第二导电层时,所述触控线引线设置于所述第一导电层,且所述触控线引线与所述触控线采用过孔方式电性连接。Alternatively, when the first electrode leads are disposed on the second conductive layer, the touch wire leads are disposed on the first conductive layer, and the touch wire leads and the touch wires use via holes way of electrical connection. 18.一种显示面板,其特征在于,包括权利要求1~17任意一项所述的阵列基板。18. A display panel, comprising the array substrate according to any one of claims 1-17. 19.一种显示装置,其特征在于,包括权利要求18所述的显示面板。19. A display device, comprising the display panel according to claim 18.
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