CN104851899B - Image sensor package structure and its method for packing - Google Patents
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Abstract
A kind of image sensor package structure and its method for packing.Wherein, described image sensor encapsulating structure includes：Imaging sensor, has functional surfaces and the back side, and the functional surfaces have photosensitive region and non-photo-sensing region, have pixel cell on the photosensitive region；Cavity wall, it is fixedly connected with the functional surfaces, the cavity wall has through hole, and the photosensitive region is exposed by the through hole, and the functional surfaces seal one of port of the through hole；Transparency carrier, has relative first surface and second surface, and the second surface seals another port of the through hole；Nanometer lines, positioned at least one of which surface of the first surface and second surface, or positioned at film, and the film is located at least one of which surface of the first surface and second surface.Described image sensor encapsulating structure can obtain the image with 3D information by Polaroid.
Description
Technical field
The present invention relates to field of image sensors, more particularly to a kind of image sensor package structure and its method for packing.
Background technology
Perception of the people to surrounding environment is always by acquisitions such as vision, the sense of hearing, tactile and the sense of taste, and simulation true to nature is again
Reveal these when participating in the cintest to feel, be one of important subject of modern science and technology.By stereophonic sound system, people are acoustically can be with
Live sensation is experienced, sterophonic technique has had evolved to higher technical merit at present.And 3D (three-dimensional/three-dimensional) vision skill
Art, it is also necessary to technological break-through.3D vision techniques include 3D rendering and 3D videos.
3D imagings are formed by visual difference, i.e., different images is seen by right and left eyes, is reappeared in human brain, and then
Realize 3D sensation.As shown in figure 1,10 be display screen, 01 and 02 are the eyes of people, and 11 be the stereopsis being perceived out.
In general, 3D imagings are realized by aberration formula, polarization type and active-shutter.Aberration formula is by red blue filter coating
So that the color of image that right and left eyes are seen is not used to realize 3D imaging effects；Polarization type is by laterally longitudinal polarizer, makes a left side
The direction of propagation difference of the image light that right eye is seen realizes 3D imaging effects；Active-shutter is by controlling right and left eyes to see
The time difference of image realizes 3D imaging effects.
3D rendering can be divided into by viewing tool type and visually observe two types.There is polarization type by viewing tool
3D rendering, red green colour filter 3D rendering etc., due to being limited by viewing tool, so practical application is also inconvenient.It is adapted to meat
The 3D rendering of eye observation has Lenticular screen image, microlens array image and hologram image.Lenticular screen image and micro-
Lens array image, using one layer of optical lens film is covered on the pattern of various visual angles information is printed with, realize each Viewing-angle information
Light is spatially separated from, and forms 3D observing effects, but is limited by the size (hundreds of micron dimensions) of optical texture, so figure
As coarse, manufacturing cost is also higher.
Laser holography can also realize 3D stereograms, and traditional hologram image technology is from laser the 1960s
Rapid development is obtained after appearance, its Basic Mechanism is using optical interference method while records the amplitude and phase of Object light wave.
Because the light wave of holographic reconstructed image remains whole amplitudes of original Object light wave and the information of phase, reproduction image has with the original
Identical 3D characteristics, it is a kind of real 3D rendering, the microstructure of hologram image is small submicrometer structure, is had
The characteristic of diffraction light, so hologram image is a kind of without ink image, color solid information can be showed, mould pressing technology can be with
The batch duplicating of this image is realized, it is achieved thereby that low manufacturing cost, the hologram image of plane has successfully realized batch
The business application of change.However, due to more than traditional 3D hologram images mastering process step and complicated, production environment condition is severe
Carve, limit the application of this stereo-picture, the case of commercial applications is very few, by this Three-dimensional holographic technology numeral
Change, avoid some uppity factors so that this image can make under the conditions of industrialized, be this image development
Inevitable requirement, will also produce huge commercial value.
Crystal wafer chip dimension encapsulation (Wafer Level Chip Size Packaging, WLCSP) technology is to full wafer
Wafer cuts to obtain the technology of single finished product chip again after being packaged test, the chip size after encapsulation and nude film complete one
Cause.Crystal wafer chip dimension encapsulation technology has thoroughly overturned conventional package such as ceramic leadless chip carrier (Ceramic
Leadless Chip Carrier), organic leadless chip carrier (Organic Leadless Chip Carrier) sum
The pattern of code-phase machine modular, market increasingly light to microelectronic product, small, short, thinning and low priceization requirement are complied with.Through wafer
Chip size after the encapsulation of level chip scale package technology, which has reached, to be highly miniaturized, and chip cost is with the reduction of chip size
Increase with wafer size and significantly reduce.Crystal wafer chip dimension encapsulation technology be IC can be designed, wafer manufacture, encapsulation
The technology that test, substrate manufacture integrate, is the focus in current encapsulation field and the trend of future development.
Three-dimensional imaging refers to a kind of imaging method for showing scenery three dimensions.Generally by producing two width different points of view
Image, respectively watched by corresponding eyes, with Boris DVE.Shooting instrument has standard type stereocamera, also has single-lens
Stereoscopic adapter is assembled on camera.Ordinary camera can also be shot with the method moved left and right.Shadow obtained by three-dimensional imaging
As subsequently stereoscopic display can be carried out by corresponding 3D display device, corresponding image in kind can also be fabricated to.
However, in the prior art, single image sensor package structure does not possess the function of obtaining 3D information.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of image sensor package structure and preparation method thereof, to realize using single
One image sensor package structure is to obtain the image with 3D information.
To solve the above problems, the present invention provides a kind of image sensor package structure, including：
Imaging sensor, has functional surfaces and the back side, and the functional surfaces have photosensitive region and non-photo-sensing region, the sense
There is pixel cell on light region；
Cavity wall, it is fixedly connected with the functional surfaces, the cavity wall has through hole, and the photosensitive region is by the through hole
Exposure, the functional surfaces seal one of port of the through hole；
Transparency carrier, has relative first surface and second surface, and the second surface seals the another of the through hole
Individual port；
Nanometer lines, positioned at least one of which surface of the first surface and second surface, or positioned at film, and
The film is located at least one of which surface of the first surface and second surface.
Optionally, the nanometer lines includes multiple first nanometer of line group and multiple second nanometer of line group, and described first receives
Rice line group has first nanometer of line of multiple tracks, and second nanometer of line group has second nanometer of line of multiple tracks, first nanometer of line edge
First is axially extending, and second nanometer of line is axially extending along second, and described first axially axially intersects with described second.
Optionally, first nanometer of line group and second nanometer of line group are arranged in array, with a line and same row
In, first nanometer of line group and second nanometer of line group are arranged alternately.
Optionally, the first surface has first nanometer of lines, and the second surface has second nanometer of lines, described
First nanometer of line group of second nanometer of lines described in first nanometer of line group face of first nanometer of lines, described first
Second nanometer of line group of second nanometer of lines described in second nanometer of line group face of nanometer lines.
Optionally, the first surface has the first film, and the second surface has the second film, the first film
With first nanometer of lines, second film has second nanometer of lines, described first nanometer of first nanometer of lines
First nanometer of line group of second nanometer of lines described in line group face, second nanometer of line group of first nanometer of lines
Second nanometer of line group of second nanometer of lines described in face.
Optionally, the area of first nanometer of lines be more than or equal to second nanometer of lines area, described second
The area of nanometer lines is more than or equal to the area of the photosensitive region.
Optionally, the nanometer lines includes multiple nanometers of line groups, each nanometer line group include it is multiple be parallel to each other receive
Meter Wen, the nanometer lines of different nanometer line groups is along axially different extension.
To solve the above problems, the present invention provides a kind of method for packing of image sensor package structure, including：
Transparency carrier is provided, the transparency carrier has relative first surface and second surface；
Cavity wall is provided, the cavity wall has through hole；
Wafer is provided, the wafer has multiple images sensor unit, and described image sensor unit has between each other
There is Cutting Road, each described image sensor unit has functional surfaces and the back side, and the functional surfaces have photosensitive region and non-sense
Light region, there is pixel cell on the photosensitive region；
The cavity wall is fixed on the functional surfaces of described image sensor unit, the photosensitive region is described
Through hole exposes, and makes one of port of the functional surfaces sealing through hole；
The transparency carrier is fixed on the cavity wall, and makes another of the second surface sealing through hole
Port；
Nanometer lines, the nanometer lines are made at least one of which surface of the first surface and second surface
The first surface and second surface are directly produced on, or the nanometer lines is produced on film surface, and the film
It is arranged at least one of which surface of the first surface and second surface；
The wafer and the cavity wall are cut along the Cutting Road.
Optionally, the nanometer lines bag is made at least one of which surface of the first surface and second surface
Include：
The film is made at least one of which surface of the first surface and second surface；
Photoetching is carried out to the film, forms the nanometer lines.
Optionally, the light is carried out to the film using mask-free photolithography direct write equipment or nano graph lithographic equipment
Carve.
Optionally, the nanometer lines includes multiple first nanometer of line group and multiple second nanometer of line group, and described first receives
Rice line group has first nanometer of line of multiple tracks, and second nanometer of line group has second nanometer of line of multiple tracks, first nanometer of line edge
First is axially extending, and second nanometer of line is axially extending along second, and described first axially axially intersects with second.
Optionally, first nanometer of line group and second nanometer of line group are arranged in array, with a line and same row
In, first nanometer of line group and second nanometer of line group are arranged alternately.
Optionally, first nanometer of lines is formed in the first surface, second nanometer of lines is formed in the second surface,
First nanometer of line group of second nanometer of lines, described described in first nanometer of line group face of first nanometer of lines
Second nanometer of line group of second nanometer of lines described in second nanometer of line group face of first nanometer of lines.
Optionally, the first surface formed the first film, the second surface formed the second film, described first
Film has first nanometer of lines, and second film has second nanometer of lines, and described the first of first nanometer of lines
First nanometer of line group of second nanometer of lines described in nanometer line group face, described second nanometer of first nanometer of lines
Second nanometer of line group of second nanometer of lines described in line group face.
Optionally, the area of first nanometer of lines be more than or equal to second nanometer of lines area, described second
The area of nanometer lines is more than or equal to the area of the photosensitive region.
Optionally, the nanometer lines includes multiple nanometers of line groups, each nanometer line group include it is multiple be parallel to each other receive
Meter Wen, the nanometer lines of different nanometer line groups is along axially different extension.
Compared with prior art, technical scheme has advantages below：
In technical scheme, because image sensor package structure has the nanometer line on film
Road, nanometer lines include multiple nanometers of line groups, therefore, before ambient enters the pixel cell of imaging sensor, by not
It is divided into the light in different polarization direction with nanometer line group, is then just received and converted by the pixel cell, now, equivalent to
The Polaroid image for just obtaining multiple different angles, and the information of multiple images presses the distribution mode phase of different nanometer line groups
It should be distributed in an image, so that the image that the pixel cell obtains has 3D information.
Brief description of the drawings
Fig. 1 is the 3D image-forming principle schematic diagrames of display screen；
Fig. 2 is the image sensor package structural representation that the embodiment of the present invention is provided；
Fig. 3 is film overlooking the structure diagram in image sensor package structure shown in Fig. 2；
Fig. 4 to Fig. 8 is the method for packing schematic diagram for the image sensor package structure that the embodiment of the present invention is provided.
Embodiment
As described in background, in the prior art, single image sensor package structure, which does not possess, obtains 3D information
Function, i.e., single image sensor package structure is Polaroid to be only capable of obtaining the image with 2D image informations.
Therefore, the present invention proposes a kind of image sensor package structure.After general conventional images sensor-packaging structure
Imaging effect is common 2D images, and the present invention proposes to be formed nanometer lines on photosensitive region, image sensor package structure,
Acted on by " light splitting " of nanometer lines, the pixel cell of image sensor package structure is obtained the light of different angle, from
And reaching the Polaroid purpose for obtaining 3D information, i.e. described image sensor encapsulating structure can just be obtained by Polaroid
There must be the image of 3D information.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of image sensor package structure, incorporated by reference to referring to figs. 2 and 3.
Fig. 2 is refer to, described image sensor encapsulating structure includes imaging sensor 200, and imaging sensor 200 has work(
Energy face 200A and back side 200B, functional surfaces 200A have photosensitive region (not marking) and non-photo-sensing region (not marking).The sense
Do not distinctly displayed between light region and non-photo-sensing region, but there is pixel cell (not shown), the pixel on photosensitive region
Being made on unit has microlens structure 202, and therefore, the functional surfaces 200A regions in Fig. 2 corresponding to microlens structure 202 are described
Photosensitive region.It should be noted that in the present embodiment, described image sensor encapsulating structure can be imaging sensor wafer scale
Chip scale package structure.
In the present embodiment, imaging sensor 200 can be cmos image sensor, wherein, the pixel cell can wrap
The structures such as color film layer (not shown) and photodiode (not shown) are included, the color film layer is located on the photodiode, micro-
Lens arrangement 202 is located in color film layer.The MOS coordinated with the photodiode is could be formed with inside imaging sensor 200
Pipe, floating diffusion region, amplifying circuit and corresponding interconnection structure etc..These semiconductor devices and structure one side and the photoelectricity
Diode electrically connects, and to handle photosignal caused by photodiode, is on the other hand electrically connected with weld pad 201.Weldering
Pad 201 is used for subsequently through metal level 203 and welding resisting layer 204, by the internal circuit configuration of imaging sensor 200 and external projection
205 are electrically connected.
In other embodiments, imaging sensor 200 can also be ccd image sensor.
Please continue to refer to Fig. 2, described image sensor encapsulating structure also includes cavity wall 210, cavity wall 210 and functional surfaces
200A is fixedly connected.Cavity wall 210 has through hole 211 (incorporated by reference to reference to figure 5 and Fig. 6), and photosensitive region is exposed by through hole 211,
Functional surfaces 200A seals one of port of through hole 211.The region that functional surfaces 200A fixes with cavity wall 210 is also to be above-mentioned non-
A part for photosensitive region.
In the present embodiment, the material of cavity wall 210 can be ceramic material, organic material, glass material or silicon materials.
Please continue to refer to Fig. 2, described image sensor encapsulating structure also includes transparency carrier 220, and transparency carrier 220 has
Relative first surface 220A and second surface 220B, second surface 220B seal another port of through hole 211.
In the present embodiment, transparency carrier 220 and imaging sensor 200 seal cavity wall 210 in centre, so that will be hollow
The through hole 211 of wall 210, which seals, turns into cavity 250, and the sub-translucent structure of pixel cell and its top is exposed by cavity 250.
In the present embodiment, transparency carrier 220 can be glass substrate or plastic base.
Please continue to refer to Fig. 2, described image sensor encapsulating structure also includes nanometer lines, and the nanometer lines is positioned at thin
On film 240, and film 240 is located at the first surface 220A of transparency carrier 220.
In the present embodiment, film 240 is specifically as follows organic film.The nanometer lines can pass through photoetching or other sides
Method is produced on film 240.
Fig. 3 is refer to, shows the plan structure of film 240.In the present embodiment, the nanometer lines includes multiple first
Nanometer line group 241 and multiple second nanometer of line group 242, first nanometer of line group 241 have first nanometer of line 2411 of multiple tracks, and second receives
Rice line group 242 has second nanometer of line 2421 of multiple tracks, and first nanometer of line 2411 along first is axially extending, second nanometer of edge of line 2421
Second is axially extending, and first is axially axially vertical with second.Also, in the present embodiment, first nanometer of line group 241 and second nanometer
Line group 242 is arranged in array, and with a line and in same row, first nanometer of line group 241 and second nanometer of line group 242 are alternately arranged
Cloth.
In other embodiments, first can also be axially axially non-perpendicular intersect with second.
The wave-length coverage of visible ray is usually 380nm to 780nm, therefore, first nanometer of line and second nanometer of line
Width can be using relative set as twice of corresponding visible wavelength, one times, half and a quarter equal in width, so as to realize
Diffraction to visible ray, ensure that different nanometer line groups receive the light of different angle, allow light to be converted into difference in other words
The polarization light of angle.
In the image sensor package structure that the present embodiment is provided, due to the nanometer line on film
Road, nanometer lines include multiple first nanometer of line group 241 and multiple second nanometer of line group 242, and therefore, ambient enters image
Before the pixel cell of sensor 200, different polarization direction is divided into by first nanometer of line group 241 and second nanometer of line group 242
Light, then just received and converted by the pixel cell, now, two different angles are just obtained equivalent to Polaroid
Image, and the information of two images is accordingly distributed by the distribution mode of first nanometer of line group 241 and second nanometer of line group 242
In an image, equivalent to (i.e. piece image is with two different angles with 3D information for the image that the pixel cell obtains
Spend the information of image).
After the image with 3D information is obtained, then after corresponding display processing, it is possible to achieve 3D rendering is shown.Institute
It both can be to be shown using corresponding tridimensional electronic display device or will accordingly have 3D information to state display processing
The 3D rendering realized into solid images of image making show.
It should be noted that in other embodiments, when nanometer lines includes multiple nanometers of line groups, ambient enters figure
As sensor the pixel cell before, the light in different polarization direction is divided into by different nanometer line groups, then just by the picture
Plain unit is received and converted, now, equivalent to the Polaroid image for just obtaining multiple different angles, and multiple images
Information is accordingly distributed in an image by the distribution mode of different nanometer line groups, so that the image that the pixel cell obtains
With 3D information.
In other embodiments, the film with nanometer lines can also may be used positioned at the second surface 220B of transparency carrier 220
To be provided with the film simultaneously on the first surface 220A and second surface 220B of transparency carrier 220, on the film
With the nanometer lines.
In other embodiments, nanometer lines can directly be produced on the first surface 220A or second of transparency carrier 220
Surface 220B, or directly it is produced on the first surface 220A and second surface 220B of transparency carrier 220.First nanometer of lines
Area is more than or equal to the area of second nanometer of lines, and the area of second nanometer of lines is more than or equal to the area of photosensitive region.
In other embodiments, first surface 220A has first nanometer of lines, and second surface 220B has second nanometer of line
Road, first nanometer of line group of first nanometer of line group second nanometer of lines of face of first nanometer of lines, the of first nanometer of lines
Second nanometer of line group of two nanometers of line group second nanometer of lines of face.
In other embodiments, first surface 220A has the first film, and second surface 220B has the second film, and first is thin
Film has first nanometer of lines, and the second film has second nanometer of lines, first nanometer of line group face of first nanometer of lines
First nanometer of line group of two nanometers of lines, second nanometer of second nanometer of line group second nanometer of lines of face of first nanometer of lines
Line group.
In the case where above two has first nanometer of lines and second nanometer of lines, due to the of first nanometer of lines
First nanometer of line group of one nanometer of line group second nanometer of lines of face, and second nanometer of line group face second of first nanometer of lines
Second nanometer of line group of nanometer lines, thus, light can reach the pixel cell by corresponding nanometer line, also, by
After different light pass through nanometer line, it is recorded in different pixel cells, therefore, the image finally given has preferable
3D information.
In other embodiments, when first surface 220A has first nanometer of lines, and second surface 220B has first to receive
During rice lines, the area of first nanometer of lines can also be controlled to be more than or equal to the area of second nanometer of lines, second nanometer of lines
Area be more than or equal to photosensitive region area.In this case, the light that whole pixel cells receives can be ensured
Line all passes through first nanometer of lines and second nanometer of lines, so as to ensure the whole of the formed whole image pixel cell
Include complete 3D information.
In other embodiments, nanometer lines includes multiple nanometers of line groups, and each nanometer line group includes multiple be parallel to each other
Nanometer line, the nanometer lines of different nanometer line groups is along axially different extension.In this case, the group number of nanometer line group can be two
More than, such as three, four or more than five.When the group number of nanometer line group is three, using this image sensor package
The piece image that structure collects can have the information of three width different angle images, when the group number of nanometer line group is four,
The piece image collected using this image sensor package structure can have the information of four width different angle images, that is,
Say, with, the group number increase of nanometer line group, the 3D information that corresponding piece image can have is abundanter, but due to the picture
Plain unit number is typically certain, if the group number of nanometer line group is more, also results in corresponding each angular image information content
Reduction.
The embodiment of the present invention also provides a kind of method for packing of image sensor package structure, to form above-described embodiment institute
The image sensor package structure of offer, therefore, incorporated by reference to reference to figure 4 to Fig. 8, and Fig. 2 and Fig. 3.It should be noted that this
In embodiment, the method for packing of described image sensor encapsulating structure can be imaging sensor crystal wafer chip dimension encapsulation knot
The method for packing of structure.
It refer to Fig. 4, there is provided transparency carrier 220, transparency carrier 220 have relative first surface 220A and second surface
220B。
It refer to Fig. 5 and Fig. 6, there is provided cavity wall 210, cavity wall 210 have through hole 211.Wherein, Fig. 5 is cavity wall 210
Cut-away view, Fig. 6 be cavity wall 210 top view.
In the present embodiment, cavity wall 210 can be formed according to the difference of material using distinct methods, also, the through hole
211 can together form with the entity part of cavity wall 210, can also after entity part is formed, the methods of passing through etching shape
Into through hole 211.
It refer to Fig. 7, there is provided there is multiple images sensor unit 200a, Fig. 7 to show described in two for wafer, the wafer
Image sensor cell 200a, neighboring image sensors unit 200a have Cutting Road (not shown) between each other, and in Fig. 7
Separated between described image sensor unit 200a with dotted line, dotted line position corresponds to the Cutting Road position.Fig. 4 into Fig. 6, with
And in Fig. 8, the Cutting Road that each dotted line is also corresponded between two adjacent images sensor unit 200a.
In the present embodiment, each image sensor cell 200a has functional surfaces 200A and back side 200B, functional surfaces 200A
With photosensitive region and non-photo-sensing region, there is the pixel cell on the photosensitive region, image sensor cell 200a's
More structures and property refer to the corresponding contents of imaging sensor 200 in previous embodiment.
Fig. 8 is refer to, cavity wall 210 is fixed on image sensor cell 200a functional surfaces 200A, photosensitive region
Exposed by through hole 211, and make one of port of functional surfaces 200A sealing through holes 211.
In the present embodiment, cavity wall 210 can be fixed on to image sensor cell 200a function by method of attaching
On the 200A of face.In other embodiments, cavity wall 210 can also be fixed on by image by ultrasonic bonding or Reflow Soldering welding and passed
On sensor cell 200a functional surfaces 200A.
Please after with reference to figure 8, transparency carrier 220 is fixed on cavity wall 210, and second surface 220B is sealed through hole
211 another port.
In the present embodiment, transparency carrier 220 and imaging sensor 200 seal cavity wall 210 in centre, so that will be hollow
The through hole 211 of wall 210, which seals, turns into cavity 250, and the sub-translucent structure of pixel cell and its top is exposed by cavity 250.
In the present embodiment, transparency carrier 220 can be fixed on cavity wall 210 by method of attaching, for example with purple
Both outer optic-solidified adhesive bondings.
Please continue to refer to Fig. 8, film 240 is set on first surface 220A, and nanometer lines is formed on film 240,
Will the nanometer lines be produced on first surface 220A.
In the present embodiment, film 240 can be directly fitted on first surface 220A by optical cement.
In the present embodiment, it be able to can include in the process of first surface 220A upper making nanometer lines：In the first table
Film 240 is set on the 220A of face, and photoetching is carried out to film 240, forms the nanometer lines.Also, can be with the present embodiment
Photoetching is carried out to film 240 using mask-free photolithography direct write equipment or nano graph lithographic equipment, so as to be formed as shown in Figure 3
Nanometer lines.
In the present embodiment, the nanometer lines on film 240 includes multiple first nanometer of line group 241 and multiple second nanometer of line
Group 242, first nanometer of line group 241 has first nanometer of line 2411 of multiple tracks, and second nanometer of line group 242 has second nanometer of line of multiple tracks
2421, first nanometer of line 2411 along first is axially extending, and second nanometer of line 2421 along second is axially extending, the first axial direction and second
It is axially vertical.First nanometer of line group 241 and second nanometer of line group 242 are arranged in array, and with a line and in same row, first receives
Rice line group 241 and second nanometer of line group 242 are arranged alternately.
Please continue to refer to Fig. 8, along Cutting Road cutting crystal wafer and cavity wall 210, the image sensor package knot finally given
Structure refer to Fig. 2, wherein, image sensor cell 200a turns into single imaging sensor 200 after being cut separation, such as Fig. 2
It is shown.
It should be noted that in other embodiments, the wafer and cavity wall 210, then fixation hollow wall can be first fixed
210 and transparency carrier 220.The present invention is not limited their permanent order.
It should be noted that the method for packing can also include：The wafer is thinned；The non-photo-sensing region
With weld pad 201, the groove that bottom is the weld pad 201 is formed in the wafer rear 200B；In the table of the recess sidewall
Face forms insulating barrier (not shown)；Full metal is filled in the groove or in groove surfaces deposited metal, to form metal
203 (in groove surfaces deposited metal, metal level 203 can be not filled with completely described groove) of layer；In the gold of the back side 200B
Belong to and welding resisting layer 204 is formed on layer 203；External projection 205 is formed in the outer surface of welding resisting layer 204.
In other embodiments, the nanometer lines only can also be made in second surface 220B, or can be in the first table
A nanometer lines is made on the 220A of face and on second surface 220B simultaneously.Also, the nanometer lines can be produced on film,
Film is arranged on the first surface 220A or second surface 220B by bonding or other methods again, can also directly be passed through
The method of photoetching or etching is directly produced on the first surface 220A or second surface 220B.
In other embodiments, first nanometer of lines is formed in first surface 220A, forming second in second surface 220B receives
Rice lines, first nanometer of line group of first nanometer of line group second nanometer of lines of face of first nanometer of lines, first nanometer of lines
Second nanometer of line group second nanometer of lines of face second nanometer of line group.
In other embodiments, the first film is formed in first surface 220A, the second film is formed in second surface 220B, the
One film has first nanometer of lines, and the second film has second nanometer of lines, and first nanometer of line group of first nanometer of lines is just
To first nanometer of line group of second nanometer of lines, the second of second nanometer of line group second nanometer of lines of face of first nanometer of lines
Nanometer line group.
In other embodiments, when first surface 220A has first nanometer of lines, and second surface 220B receives in the presence of second
During rice lines, it may be such that the area of first nanometer of lines is more than or equal to the area of second nanometer of lines, the face of second nanometer of lines
Area of the product more than or equal to photosensitive region.
In other embodiments, nanometer lines can include multiple nanometers of line groups, and each nanometer line group includes multiple mutually flat
Capable nanometer line, the nanometer lines of different nanometer line groups is along axially different extension.
The method for packing that the present embodiment is provided can form the image sensor package structure that above-described embodiment is provided,
Described image sensor encapsulating structure can obtain the image with 3D information by Polaroid.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (14)
- A kind of 1. image sensor package structure, it is characterised in that including：Imaging sensor, has functional surfaces and the back side, and the functional surfaces have photosensitive region and non-photo-sensing region, the photosensitive area There is pixel cell on domain；Cavity wall, it is fixedly connected with the functional surfaces, the cavity wall has a through hole, and the photosensitive region is sudden and violent by the through hole Dew, the functional surfaces seal one of port of the through hole；Transparency carrier, has relative first surface and second surface, and the second surface seals another end of the through hole Mouthful；Nanometer lines, positioned at least one of which surface of the first surface and second surface, or positioned at film, and it is described Film is located at least one of which surface of the first surface and second surface；Wherein, the nanometer lines includes multiple first nanometer of line group and multiple second nanometer of line group, first nanometer of line group With first nanometer of line of multiple tracks, second nanometer of line group has second nanometer of line of multiple tracks, and first nanometer of line is along first axle To extension, second nanometer of line is axially extending along second, and described first axially axially intersects with described second.
- 2. image sensor package structure as claimed in claim 1, it is characterised in that first nanometer of line group and described Two nanometers of line groups are arranged in array, and with a line and in same row, first nanometer of line group and second nanometer of line group are equal It is arranged alternately.
- 3. image sensor package structure as claimed in claim 2, it is characterised in that the first surface has first nanometer Lines, the second surface have second nanometer of lines, described in first nanometer of line group face of first nanometer of lines First nanometer of line group of second nanometer of lines, second described in second nanometer of line group face of first nanometer of lines Second nanometer of line group of nanometer lines.
- 4. image sensor package structure as claimed in claim 2, it is characterised in that the first surface is thin with first Film, the second surface have the second film, and the first film has first nanometer of lines, and second film has second Nanometer lines, described first nanometer of second nanometer of lines described in first nanometer of line group face of first nanometer of lines Line group, second nanometer of line of second nanometer of lines described in second nanometer of line group face of first nanometer of lines Group.
- 5. the image sensor package structure as described in claim 3 or 4, it is characterised in that the face of first nanometer of lines Product is more than or equal to the area of second nanometer of lines, and the area of second nanometer of lines is more than or equal to the photosensitive region Area.
- 6. image sensor package structure as claimed in claim 1, it is characterised in that the nanometer lines includes multiple nanometers Line group, each nanometer line group include multiple nanometer lines being parallel to each other, and the nanometer lines of different nanometer line groups is along axially different extension.
- A kind of 7. method for packing of image sensor package structure, it is characterised in that including：Transparency carrier is provided, the transparency carrier has relative first surface and second surface；Cavity wall is provided, the cavity wall has through hole；Wafer is provided, the wafer has multiple images sensor unit, and described image sensor unit has between each other to be cut Cut, each described image sensor unit has functional surfaces and the back side, and the functional surfaces have photosensitive region and non-photo-sensing area Domain, there is pixel cell on the photosensitive region；The cavity wall is fixed on the functional surfaces of described image sensor unit, the photosensitive region is by the through hole Exposure, and make one of port of the functional surfaces sealing through hole；The transparency carrier is fixed on the cavity wall, and makes another end of the second surface sealing through hole Mouthful；Nanometer lines is made at least one of which surface of the first surface and second surface, the nanometer lines is direct The first surface and second surface are produced on, or the nanometer lines is produced on film surface, and the film is set In at least one of which surface of the first surface and second surface；Wherein, the nanometer lines includes multiple first nanometers Line group and multiple second nanometer of line group, first nanometer of line group have first nanometer of line of multiple tracks, second nanometer of line group tool There is second nanometer of line of multiple tracks, first nanometer of line is axially extending along first, and second nanometer of line is axially extending along second, institute First is stated axially with second axially to intersect；The wafer and the cavity wall are cut along the Cutting Road.
- 8. the method for packing of image sensor package structure as claimed in claim 7, it is characterised in that in the first surface Include with the nanometer lines is made at least one of which surface of second surface：The film is made at least one of which surface of the first surface and second surface；Photoetching is carried out to the film, forms the nanometer lines.
- 9. the method for packing of image sensor package structure as claimed in claim 8, it is characterised in that using mask-free photolithography Direct write equipment or nano graph lithographic equipment carry out the photoetching to the film.
- 10. the method for packing of image sensor package structure as claimed in claim 7, it is characterised in that described first nanometer Line group and second nanometer of line group are arranged in array, with a line and in same row, first nanometer of line group and described the Two nanometers of line groups are arranged alternately.
- 11. the method for packing of image sensor package structure as claimed in claim 10, it is characterised in that in first table Face formed first nanometer of lines, the second surface formed second nanometer of lines, described the first of first nanometer of lines First nanometer of line group of second nanometer of lines described in nanometer line group face, described second nanometer of first nanometer of lines Second nanometer of line group of second nanometer of lines described in line group face.
- 12. the method for packing of image sensor package structure as claimed in claim 10, it is characterised in that in first table Face forms the first film, and the second film is formed in the second surface, and the first film has first nanometer of lines, and described the Two films have second nanometer of lines, second nanometer of lines described in first nanometer of line group face of first nanometer of lines First nanometer of line group, the institute of second nanometer of lines described in second nanometer of line group face of first nanometer of lines State second nanometer of line group.
- 13. the method for packing of the image sensor package structure as described in claim 11 or 12, it is characterised in that described first The area of nanometer lines is more than or equal to the area of second nanometer of lines, and the area of second nanometer of lines is more than or equal to institute State the area of photosensitive region.
- 14. the method for packing of image sensor package structure as claimed in claim 7, it is characterised in that the nanometer lines Including multiple nanometers of line groups, each nanometer line group includes multiple nanometer lines being parallel to each other, the nanometer line edge of different nanometer line groups Axially different extension.
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| CN107301392B (en) * | 2017-06-20 | 2020-12-04 | 华天科技（昆山）电子有限公司 | Wafer-level image acquisition device |
| CN110783317A (en) * | 2019-10-11 | 2020-02-11 | 安徽国晶微电子有限公司 | Photosensitive chip packaging structure |
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