CN104810341B - A kind of method for packing of high-frequency interconnection structure using low parasitic inductance - Google Patents
A kind of method for packing of high-frequency interconnection structure using low parasitic inductance Download PDFInfo
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- CN104810341B CN104810341B CN201510184868.6A CN201510184868A CN104810341B CN 104810341 B CN104810341 B CN 104810341B CN 201510184868 A CN201510184868 A CN 201510184868A CN 104810341 B CN104810341 B CN 104810341B
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- shaped slide
- interconnection
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- 230000003071 parasitic effect Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000012856 packing Methods 0.000 title claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 55
- 239000008188 pellet Substances 0.000 claims abstract description 25
- 229910052738 indium Inorganic materials 0.000 claims abstract description 23
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000523 sample Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 5
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims 1
- 238000010257 thawing Methods 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses a kind of method for packing of the high-frequency interconnection structure using low parasitic inductance, its structure includes chip and special-shaped slide glass, and chip is provided below pad, pad is also equipped with above special-shaped slide glass, is interconnected between two pads by indium pellet；The height of indium pellet is less than 5 microns；Chip and special-shaped slide glass are interconnected by the present invention using by indium pellet, since indium pellet is low for fusing point, and quality dead-soft, avalanche and thawing can be produced in flip-chip interconnection, effectively reduces interconnection height, reduces the stray inductance of interconnection；At the same time in the special-shaped slide glass of " returning " word shape, parasitic capacitance is produced between chip and slide glass after it also avoid upside-down mounting.Co-planar waveguide probe is made in special-shaped slide glass, the slide glass and chip that have interconnected are assembled in wave-guide cavity wave by micro-group dress, millimeter wave and THz wave chip package can be become light guide module.
Description
Technical field
The present invention relates to technical field of integrated circuits, is the interconnection structure between chip and its application, is specifically a kind of profit
With the method for packing of the high-frequency interconnection structure of low parasitic inductance.
Technical background
Millimeter wave and THz wave refer to that frequency is 30GHz to 3THz electromagnetic waves, and operation wavelength is 10mm to 0.1mm.
Millimeter wave and THz wave encapsulation are there are an especially important problem, that is, assemble and connect multiple monolithic microwaves and integrate electricity
Road（MMIC）Establish the front ends of millimeter waves of multi-chip module.Therefore the interconnection between chip needs have low parasitic inductance, at the same time
Since the pad in high frequency chip is smaller, generally only 50um × 50um, or even smaller 30um × 30um.
Chip is fixed or is physically connected to and is known as interconnecting on slide glass.The method of interconnection mainly has：Bonding line, flip-chip
And TSV technology is three kinds of common interconnection techniques.Flip-chip bonding is that salient point and straight is formed on the connection pad of chip
The technique of PCB slide glasses or metal slide glass is connected in succession.Flip-chip bonding techniques have clear advantage：Interconnection structure is most short, posts
Raw inductance is minimum.
In traditional flip-chip interconnection process, salient point is tin alloy ball, and tin is a kind of relatively low material of fusing point, by tin
When salient point is interconnected made of alloying pellet, often occur that salient point caves in；Have and propose to replace tin using copper post in kind of new process
Alloying pellet salient point is connected a chip on slide glass.Thus replace tin alloy ball salient point using copper post and connect a chip to energy on slide glass
Enough copper post is avoided to cave in.No matter tin alloy ball or copper post, height all influenced be subject to chip bonding pad size.For due to 50um
× 50um pads, the height after interconnection are generally less than 10um.Very big parasitism electricity can be thus formed between chip and slide glass
Hold, the performance of chip can be seriously affected.
To sum up, a kind of high-frequency interconnection structure of low parasitic inductance how is designed, specifically, is applicable in flip-chip interconnection technique
Low clearance problem, while the parasitic inductance of high-frequency interconnection is reduced, encapsulation performance is improved, is that those skilled in the art urgently need to solve
A problem certainly.
The content of the invention
The present invention is directed to propose a kind of method for packing of high-frequency interconnection structure using low parasitic inductance, using millimeter wave and
By upside-down mounting slide structure interconnect outside piece between THz wave chip, to solve existing high frequency chip flip-chip interconnection technique
The low influence to chip performance of bumps, while the parasitic inductance of high-frequency interconnection is reduced, the matching between chip is improved, improves envelope
Fill performance.
Technical scheme is as follows：
A kind of high-frequency interconnection structure using low parasitic inductance, it is characterised in that：Including chip and special-shaped slide glass, under chip
Face is provided with pad, and pad is also equipped with above special-shaped slide glass, is interconnected between two pads by indium pellet.
By being installed to chip and special-shaped slide glass application certain temperature and pressure, the temperature of application is 125-135 DEG C,
The pressure of application is 9-12Kg.
The height of indium pellet after installation is less than 5 microns.
The fusing point of the indium pellet is 156.61 DEG C, and conductivity is 83.7n Ω/m, and quality dead-soft.The meeting in flip-chip interconnection
Avalanche and thawing are produced, therefore interconnection height can be reduced to below 5 microns, can effectively reduce the stray inductance of interconnection.
The center of the abnormity slide glass is hollow-out part, and hollow-out part is rectangle, and this avoid chip after upside-down mounting and load
Parasitic capacitance is produced between piece.
, can be by millimeter wave and THz wave chip package into waveguide using metal cavity using above-mentioned high-frequency interconnection structure
Module, specific encapsulation process are：
The first step, by the form of the high-frequency interconnection structure, by chip and special-shaped slide glass with co-planar waveguide probe
It is interconnected；
Second step, chip and special-shaped slide glass are assembled on metal support plate by conducting resinl；
3rd step, the metal support plate for being assembled with chip and special-shaped slide glass is assembled in waveguide lower chamber by conducting resinl；
4th step, according to order from top to bottom, successively fills waveguide upper cavity, power panel, cover board and waveguide lower chamber
Millimeter wave and THz wave chip package are become into light guide module with, realizing together.
Beneficial effects of the present invention are as follows：
Chip and special-shaped slide glass are interconnected by the present invention using by indium pellet, since indium pellet is low for fusing point, and quality
Dead-soft, avalanche and thawing can be produced in flip-chip interconnection, effectively reduces interconnection height, reduce the stray inductance of interconnection；Together
When be in " returning " word shape special-shaped slide glass, parasitic capacitance is produced between chip and slide glass after it also avoid upside-down mounting.In special-shaped slide glass
Co-planar waveguide probe is made, is assembled the slide glass and chip that have interconnected in wave-guide cavity wave by micro-group dress, can be by millimeter wave
Become light guide module with THz wave chip package.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of the flipchip interconnection structure of the present invention；
Fig. 2 is that the chip package of the present invention becomes the schematic diagram of light guide module；
Wherein, reference numeral is：Chip 1, pad 2, indium pellet 3, pad 4, special-shaped slide glass 5, waveguide upper cavity 6, chip 7,
Special-shaped slide glass 8, metal support plate 9, waveguide lower chamber 10, power panel 11, cover board 12.
Embodiment
The present invention is that chip and special-shaped substrate are interconnected by indium pellet, since indium pellet is low for fusing point, and quality pole
It is soft, avalanche and thawing can be produced in flip-chip interconnection, the height of interconnection can be reduced, reduces stray inductance.In " returning " word shape
Special-shaped slide glass, parasitic capacitance is produced after it also avoid upside-down mounting between chip and slide glass.The abnormity interconnected is carried by micro-group dress
Piece and chip are assemblied in wave-guide cavity wave, millimeter wave and THz wave chip package can be become light guide module.
Embodiment 1
As shown in Figure 1, a kind of high-frequency interconnection structure using low parasitic inductance, including chip and special-shaped slide glass, under chip
Face is provided with pad, and pad is also equipped with above special-shaped slide glass, is interconnected between two pads by indium pellet.
By applying 125 DEG C to chip and special-shaped slide glass, application pressure is 12Kg, and the height of the indium pellet after installation is 1-5
A micron.
The fusing point of the indium pellet is 156.61 DEG C, and conductivity is 83.7n Ω/m, and quality dead-soft.The meeting in flip-chip interconnection
Avalanche and thawing are produced, therefore interconnection height can be reduced to below 5 microns, can effectively reduce the stray inductance of interconnection.
The center hollow out of the abnormity slide glass, the part of hollow out is rectangle, thus is avoided that after upside-down mounting between chip and slide glass
Produce parasitic capacitance.
Embodiment 2
Weldering is provided below in a kind of high-frequency interconnection structure using low parasitic inductance, including chip and special-shaped slide glass, chip
Disk, is also equipped with pad above special-shaped slide glass, is interconnected between two pads by indium pellet.
By applying 130 DEG C to chip and special-shaped slide glass, application pressure is 10Kg, the height of the indium pellet after installation 1-5
Micron.
The fusing point of the indium pellet is 156.61 DEG C, and conductivity is 83.7n Ω/m, and quality dead-soft.The meeting in flip-chip interconnection
Avalanche and thawing are produced, therefore interconnection height can be reduced to below 5 microns, can effectively reduce the stray inductance of interconnection.
The center hollow out of the abnormity slide glass, the part of hollow out is rectangle, thus is avoided that after upside-down mounting between chip and slide glass
Produce parasitic capacitance.
Embodiment 3
As shown in Figure 1, a kind of high-frequency interconnection structure using low parasitic inductance, including chip and special-shaped slide glass, under chip
Face is provided with pad, and pad is also equipped with above special-shaped slide glass, is interconnected between two pads by indium pellet.
By applying 135 DEG C to chip and special-shaped slide glass, application pressure is 9Kg, and height 1-5 of the indium pellet after installation is micro-
Rice.
The fusing point of the indium pellet is 156.61 DEG C, and conductivity is 83.7n Ω/m, and quality dead-soft.The meeting in flip-chip interconnection
Avalanche and thawing are produced, therefore interconnection height can be reduced to below 5 microns, can effectively reduce the stray inductance of interconnection.
The center hollow out of the abnormity slide glass, the part of hollow out is rectangle, thus is avoided that after upside-down mounting between chip and slide glass
Produce parasitic capacitance.
Embodiment 4
, can be by millimeter wave and THz wave chip package into waveguide using metal cavity using above-mentioned high-frequency interconnection structure
Module, as shown in Fig. 2, specific encapsulation process is：
The first step, chip 7 is interconnected by above-mentioned interconnecting method and with co-planar waveguide probe abnormity slide glass 8；
Second step, chip 7 and special-shaped slide glass 8 are assembled on metal support plate 9 by conducting resinl；
3rd step, waveguide lower chamber is assembled to by the metal support plate 9 for being assembled with chip 7 and special-shaped slide glass 8 by conducting resinl
In 10；
Waveguide upper cavity 6, power panel 11, cover board 12 and waveguide lower chamber 10, are assembled together by the 4th step successively, realize
Millimeter wave and THz wave chip package are become into light guide module.
High-frequency interconnection structure of the present invention has the advantages that low parasitic inductance, low-loss.By the interconnection structure into
Interconnected between row high frequency chip, the results showed that this method has good performance.The high-frequency model made by this method, achieves
Superior performance.
Claims (3)
- A kind of 1. method for packing of high-frequency interconnection structure using low parasitic inductance, it is characterised in that：Will milli using metal cavity Metric wave and THz wave chip package are into light guide module, specific encapsulation process：The first step, chip and the special-shaped slide glass with co-planar waveguide probe are interconnected；Weldering is provided below in the chip Disk, is also equipped with pad above special-shaped slide glass, is interconnected between two pads by indium pellet；The height of indium pellet is less than 5 microns；Second step, chip and special-shaped slide glass are assembled on metal support plate by conducting resinl；3rd step, the metal support plate for being assembled with chip and special-shaped slide glass is assembled in waveguide lower chamber by conducting resinl；4th step, according to order from top to bottom, successively assembles waveguide upper cavity, power panel, cover board and waveguide lower chamber Together, realize becomes light guide module by millimeter wave and THz wave chip package；The center of the abnormity slide glass is hollow-out part, and parasitic capacitance is produced between chip and slide glass after avoiding upside-down mounting.
- 2. the method for packing of the high-frequency interconnection structure according to claim 1 using low parasitic inductance, it is characterised in that：Institute The hollow-out part for stating the center of special-shaped slide glass is rectangle.
- 3. the method for packing of the high-frequency interconnection structure according to claim 2 using low parasitic inductance, it is characterised in that：It is logical Cross to chip and special-shaped slide glass applies certain temperature and pressure is installed, the temperature of application is 125-135 DEG C, the pressure of application For 9-12Kg.
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| CN201510184868.6A CN104810341B (en) | 2015-04-20 | 2015-04-20 | A kind of method for packing of high-frequency interconnection structure using low parasitic inductance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510184868.6A CN104810341B (en) | 2015-04-20 | 2015-04-20 | A kind of method for packing of high-frequency interconnection structure using low parasitic inductance |
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| Publication Number | Publication Date |
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| CN104810341A CN104810341A (en) | 2015-07-29 |
| CN104810341B true CN104810341B (en) | 2018-04-24 |
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| JP7339807B2 (en) * | 2019-08-06 | 2023-09-06 | 日本ルメンタム株式会社 | semiconductor light emitting device |
| CN112701092A (en) * | 2020-12-24 | 2021-04-23 | 北京国联万众半导体科技有限公司 | Millimeter wave monolithic integrated circuit packaging structure and packaging method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389792A (en) * | 1993-01-04 | 1995-02-14 | Grumman Aerospace Corporation | Electron microprobe utilizing thermal detector arrays |
| CN102590731A (en) * | 2012-01-17 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Method for realizing silicon read-out circuit test in infrared focal plane array |
-
2015
- 2015-04-20 CN CN201510184868.6A patent/CN104810341B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389792A (en) * | 1993-01-04 | 1995-02-14 | Grumman Aerospace Corporation | Electron microprobe utilizing thermal detector arrays |
| CN102590731A (en) * | 2012-01-17 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Method for realizing silicon read-out circuit test in infrared focal plane array |
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