CN104766932A - Biodegradable substrate for flexible optoelectronic device and method for manufacturing same - Google Patents

Abstract

The present invention discloses a biodegradable substrate for flexible optoelectronic devices and a method for manufacturing the same. The substrate of the present invention comprises a flexible substrate and a conductive layer, wherein the conductive layer is located above the flexible substrate, wherein the flexible substrate is shellac mixed with dual-curing glue, wherein the mass ratio of the dual-curing glue in the shellac is 0.3-4%, and wherein the dual-curing glue is composed of a dual-curing system, wherein the dual-curing system is a UV-curing-thermal curing system, a UV-curing-microwave curing system, a UV-curing-anaerobic curing system, or a UV-curing-electron beam curing system. The present invention cross-links molecules after dual-curing treatment to prevent crystallization of resin molecules in the shellac, thereby reducing light scattering, improving the light transmittance of the flexible substrate, improving the performance of the flexible optoelectronic device, and simultaneously solving the problem of low substrate flexibility, improving the water and oxygen barrier capacity of the flexible substrate and the smoothness of the substrate surface, and improving the affinity of the conductive film to the substrate.

Description

Biodegradable substrate for flexible optoelectronic devices and manufacturing method thereof

technical field

The invention belongs to the technical field of organic optoelectronics, and in particular relates to a degradable substrate for flexible optoelectronic devices and a manufacturing method thereof.

Background technique

With the wide application of optoelectronic technology in optoelectronic products such as solar cells, optical image sensors, plasma flat panel displays, electroluminescent displays, thin film transistors, and liquid crystal display panels, the optoelectronic information industry has received more and more attention from various countries and has become One of the important development areas, the competition in the field of optoelectronic information is also intensifying. Although traditional rigid substrates (such as glass or silicon wafers) have excellent device performance, they are weak in vibration and impact resistance, relatively heavy in weight, and not easy to carry, which is greatly limited in application. In the past 10 years, flexible electronics and flexible optoelectronics technology has become the most active research direction in the field of electronic information, and it is also an important direction for the development of the electronic information industry.

Compared with traditional rigid substrate optoelectronic devices, flexible substrate optoelectronic devices are lighter, thinner, bendable, rollable and easy to carry. At present, flexible liquid crystal displays, flexible organic electroluminescent displays, flexible organic solar cells, etc. have gradually developed into the most promising high-tech industries. However, despite the advantages of flexible substrates, there are still many basic problems to be solved: 1. The surface flatness of flexible substrates is far less than that of glass substrates. Oxygen attack, resulting in a reduction in device efficiency. 2. The increasing number of flexible electronics and flexible optoelectronic products have caused a large amount of solid pollution due to their non-degradability. Therefore, the study of degradable substrates for flexible optoelectronic devices is of great significance for broadening the application range of flexible optoelectronics/electronics technology and environmental protection.

At present, there are still some problems in the research of biodegradable substrates: 1. The flexibility is poor, and the expected effect cannot be achieved when applied to flexible optoelectronic devices; 2. The transmittance is low, which directly affects the efficiency of the device; 3. The barrier ability to water and oxygen Poor, causing the performance of the device to be greatly attenuated during normal operation. To sum up, the existence of these problems restricts the rapid development and application of flexible optoelectronic devices to a certain extent.

Contents of the invention

In order to solve the above technical problems, the present invention provides a biodegradable substrate for flexible optoelectronic devices and its manufacturing method, which solves the problem of poor surface smoothness of the flexible substrate and improves the barrier ability of the flexible substrate to water and oxygen , improve the adhesion of the flexible substrate to the conductive layer, and at the same time increase the light transmittance of the flexible substrate, thereby improving the photoelectric or electro-optical conversion efficiency of the flexible optoelectronic device; the preparation method is simple and efficient, and can effectively reduce the production cost and process difficulty .

In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is:

A substrate for biodegradable flexible optoelectronic devices, including a flexible substrate and a conductive layer, the conductive layer is located above the flexible substrate, characterized in that the flexible substrate is shellac mixed with double curing glue, the The mass ratio of the dual-curing glue in the shellac is 0.3-4%, and the double-curing glue is composed of a dual-curing system, and the dual-curing system is an ultraviolet curing-thermal curing system, an ultraviolet curing-microwave curing system, an ultraviolet One or more of photocuring-anaerobic curing system or UV curing-electron beam curing system, the dual curing system is completed through two independent curing stages, one of which is through UV curing reaction , another curing stage is the dark reaction.

The dual curing system is the following system:

① Radical UV curing-heat curing system, weight composition:

The curing process is: UV curing first, then heating and curing, and then UV curing; or heating and curing first, then UV curing, and then heating and curing;

② Radical UV curing-microwave curing system, weight composition:

The curing process is: UV curing first, then microwave curing, and then UV curing; or microwave curing first, then UV curing, and then heating or microwave curing;

③Free radical UV curing-anaerobic curing system, weight composition:

The curing process is: firstly carry out ultraviolet light curing, then the substrate which is not exposed to light and under anoxic conditions will automatically undergo anaerobic curing reaction, and then carry out ultraviolet light curing;

④ Radical UV curing-electron beam curing system, weight composition:

The curing process is: first UV curing, then electron beam curing under vacuum, and then UV curing;

⑤Cationic UV curing-thermal curing system, weight composition:

The curing process is: UV curing first, then heating and curing, and then UV curing; or heating and curing first, then UV curing, and then heating and curing;

⑥Cationic UV curing-microwave curing system, weight composition:

The curing process is: UV curing first, then microwave curing, and then UV curing; or microwave curing first, then UV curing, and then heating or microwave curing;

⑦Cationic UV curing-anaerobic curing system, weight composition:

The curing process is: firstly carry out ultraviolet light curing, then the substrate which is not exposed to light and under anoxic conditions will automatically undergo anaerobic curing reaction, and then carry out ultraviolet light curing;

Or ⑧ cationic UV curing - electron beam curing system, weight composition:

The curing process is: first UV curing, then electron beam curing under vacuum, and then UV curing.

The free radical thermal curing agent is ethylenediamine, hexamethylenediamine, triethylenetetramine, hydroxyethyldiethylenetriamine, hydroxyisopropyldiethylenetriamine, polyoxalic acid adipamide, dimethylaminopropylamine , tetramethylpropylenediamine, dicyandiamide, diaminodiphenylsulfone, diaminodiphenylmethane, m-phenylenediamine, diethyltoluenediamine, N-(aminopropyl)-toluene di Amine, dimethylethanolamine, dimethylbenzylamine, triethylbenzylamine chloride, benzyl-dimethylamine, N-benzyldimethylamine, 2,4,6,-tri-(dimethylamine methyl)-phenol, phenol formaldehyde hexamethylenediamine, N,N-dimethylbenzylamine, 2-ethylimidazole, 2-phenylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl Base-4-methylimidazole, 1-(2-aminoethyl)-2-methylimidazole, maleic anhydride, diphenyl ether tetracarboxylic dianhydride, phthalic anhydride, trimellitic anhydride, tetra Bromophthalic anhydride, polynonacetic anhydride, sebacic acid dihydrazide, adipic acid dihydrazide, carbonate dihydrazide, oxalic acid dihydrazide, succinic acid dihydrazide, adipate dihydrazide, N-amino Polyacrylamide, sebacic acid hydrazide, isophthalic acid hydrazide, p-hydroxybenzoic acid hydrazide, azelaic acid dihydrazide, isophthalic acid dihydrazide, ferrocene tetrafluoroborate, trimer Triallyl cyanate, toluene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, trimethylhexamethylene diisocyanate, dicyclohexylmethane diisocyanate, xylylene diisocyanate, tetramethylxylylene diisocyanate diisocyanate, methylstyrene isocyanate, hexahydrotoluene diisocyanate, trityl methane-4,4',4'-triisocyanate, diaminodiphenylmethane, N-p-chlorophenyl-N-N-di Methylurea, 3-phenyl-1,1-dimethylurea, 3-p-chlorophenyl-1,1-dimethylurea, 4,4'-diaminodiphenylbisphenol, polyurethane Ester, urea-formaldehyde resin, epoxy-ethylenediamine carbamate, 2,4,6-tris(dimethylaminomethyl)phenol, 2,4-diaminotoluene, polyurethane, methyl etherified urea-formaldehyde Resin, tris(3-aminopropyl)amine, 2-aminoethyl-bis(3-aminopropyl)amine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylbis Phenol, 4,4'-diaminodiphenylsulfone, tris(3-aminopropyl)amine, melamine resin, benzomelamine resin, hexamethylolmelamine resin, hexamethoxymethylmelamine resin, urea-melamine formaldehyde resin , polyester melamine, trichloroisocyanurate, aminotriazine resin, urethane acrylate, 4-aminopyridine resin, N-β-aminoethyl aminopolyester resin, α-aminopyridine resin, amino Diphenyl ether resin, aminophosphoric acid resin, hydroxyethylamino polyester resin; the microwave curing agent and the thermal curing agent use the same material or different materials; the anaerobic curing agent includes: triethylene glycol dimethacrylate Ester, polyethylene glycol dimethacrylate, triethylene glycol dimethacrylate, ethylene glycol dimethacrylate, hydroxyethyl or hydroxypropyl methacrylate, methoxylated polyethylene Diol methacrylate, triethylene glycol phthalate, β-hydroxyethyl methacrylate, triethylene glycol phthalate Ethylene Glycol Dimethacrylate, Thiodiethylene Glycol Dimethacrylate, Bis(Diethylene Glycol Acrylate) Phthalate, Ethoxylated Bisphenol A Dimethacrylate, Dimethacrylic Acid Bisphenol A glycol ester, ethylene glycol methacrylate, triethylene glycol dimethacrylate, ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, acetal Ethanol dimethacrylate, epoxy resin methacrylate, diethylene glycol dimethacrylate; the electron beam curing agent includes: triphenolyl methane glycidyl ether epoxy resin, dicyclopentadiene Alkenyl bisphenol type epoxy resin, bisphenol A type vinyl ester resin, epoxy vinyl ester resin, epoxy acrylate resin, maleimide resin, 4,4'-diphenylmethane bismaleimide Amine, bisphenol A-diphenyl ether bismaleimide, bisphenol A maleic acid vinyl resin, brominated vinyl ester resin, novolac epoxy vinyl ester resin, methylolated bisphenol A Type epoxy resin, bisphenol A acrylate, urethane acrylate, bisphenol A epoxy vinyl ester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol A type epoxy Acrylate resin, bisphenol A diglycidyl ether or bisphenol A epoxy chloroacrylate resin;

The photoinitiator is benzoin or benzoin derivatives, and the benzoin derivatives are benzoin methyl ether, benzoin ether, acetophenone derivatives or benzoin isopropyl ether; the cationic photoinitiator is aromatic sulfonium salt, iodonium salt or ferrocene salts; photosensitizers are benzophenone, thioxanthraquinone or Michler's ketone; additives include plasticizers, thixotropic agents and fillers;

Plasticizers are dioctyl phthalate, dibutyl phthalate, tributoxy vinyl phosphate, polyvinyl butyral, acetyl tributyl citrate, dimethyl phthalate , diethyl phthalate, bis(butoxyethoxy) ethyl adipate, isopropyl titanate, n-butyl titanate, citrate, trimellitic acid (2-ethyl) Hexyl ester, Di(2-ethyl)hexyl phthalate, Di(2-ethyl)hexyl sebacate, Diethylene glycol dibenzoate, Phthalic anhydride, Dipropylene glycol Dibenzoate and chlorosulfonated polyethylene; the coupling agents include methylvinyldichlorosilane, methylhydrogendichlorosilane, dimethyldichlorosilane, dimethylmonochlorosilane, vinyltrichlorosilane, Chlorosilane, γ-Aminopropyltrimethoxysilane, Dimethicone, Polyhydromethylsiloxane, Polymethylmethoxysiloxane, γ-Propyltrimethoxymethacrylate Silane, γ-aminopropyltriethoxysilane, γ-glycidyl ether propyltrimethoxysilane, aminopropyl silsesquioxane, γ-methacryloxypropyltrimethoxysilane, long Alkyltrimethoxysilane, Vinyltriethoxysilane, Vinyltrimethoxysilane, γ-Chloropropyltriethoxysilane, Bis-(γ-triethoxysilylpropyl), Aniline Methyltriethoxysilane, N-β(aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-γ-aminopropyltriethoxysilane, N- β(aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-(2,3-glycidoxy)propyltrimethoxysilane, γ-(methacryloyloxy)propyl Trimethylsilane, γ-mercaptopropyltrimethoxysilane or γ-mercaptopropyltriethoxysilane.

The material of the conductive layer is one or more of graphene, carbon nanotubes, metal elemental nanowires, metal alloy nanowires, metal heterojunction nanowires, zinc oxide, titanium oxide, indium tin oxide or polymer electrode materials Various.

The metal nanowires or iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowires, cobalt nanowires, manganese nanowires, cadmium nanowires, indium nanowires, tin nanowires , one or more of tungsten nanowires or platinum nanowires.

The metal alloy nanowires are copper-iron alloy nanowires, silver-iron alloy nanowires, gold-iron alloy nanowires, aluminum-iron alloy nanowires, nickel-iron alloy nanowires, cobalt-iron alloy nanowires, manganese-iron alloy nanowires, cadmium-iron alloy nanowires, and indium-iron alloy nanowires. wire, tin-iron alloy nanowire, tungsten-iron alloy nanowire, platinum-iron alloy nanowire, silver-copper alloy nanowire, gold-copper alloy nanowire, aluminum-copper alloy nanowire, nickel-copper alloy nanowire, cobalt-copper alloy nanowire, manganese-copper alloy Nanowires, cadmium-copper alloy nanowires, tin-copper alloy nanowires, tungsten-copper alloy nanowires, platinum-copper alloy nanowires, gold-silver alloy nanowires, aluminum-silver alloy nanowires, nickel-silver alloy nanowires, cobalt-silver alloy nanowires , manganese-silver alloy nanowires, cadmium-silver alloy nanowires, indium-silver alloy nanowires, tin-silver alloy nanowires, tungsten-silver alloy nanowires, platinum-silver alloy nanowires, aluminum-gold alloy nanowires, nickel-gold alloy nanowires, cobalt Gold alloy nanowires, manganese-gold alloy nanowires, cadmium-gold alloy nanowires, indium-gold alloy nanowires, tin-gold alloy nanowires, tungsten-gold alloy nanowires, cobalt-nickel alloy nanowires, manganese-nickel alloy nanowires, cadmium-nickel alloy nanowires wire, indium-nickel alloy nanowire, tin-nickel alloy nanowire, tungsten-nickel alloy nanowire, platinum-nickel alloy nanowire, cadmium-manganese alloy nanowire, indium-manganese alloy nanowire, tin-manganese alloy nanowire, tungsten-manganese alloy nanowire, Platinum-manganese alloy nanowires, indium-cadmium alloy nanowires, tin-cadmium alloy nanowires, tungsten-cadmium alloy nanowires, platinum-cadmium alloy nanowires, tin-indium alloy nanowires, tungsten-indium alloy nanowires, platinum-indium alloy nanowires, tungsten-tin One or more of alloy nanowires, platinum-tin alloy nanowires or platinum-tungsten alloy nanowires.

The metal heterojunction nanowires are copper-iron heterojunction nanowires, silver-iron heterojunction nanowires, gold-iron heterojunction nanowires, aluminum-iron heterojunction nanowires, nickel-iron heterojunction nanowires, cobalt Iron heterojunction nanowires, manganese-iron heterojunction nanowires, cadmium-iron heterojunction nanowires, indium-iron heterojunction nanowires, tin-iron heterojunction nanowires, tungsten-iron heterojunction nanowires, platinum-iron heterojunction nanowires Mass junction nanowires, silver-copper heterojunction nanowires, gold-copper heterojunction nanowires, aluminum-copper heterojunction nanowires, nickel-copper heterojunction nanowires, cobalt-copper heterojunction nanowires, manganin-copper heterojunction Nanowires, cadmium-copper heterojunction nanowires, tin-copper heterojunction nanowires, tungsten-copper heterojunction nanowires, platinum-copper heterojunction nanowires, gold-silver heterojunction nanowires, aluminum-silver heterojunction nanowires , nickel-silver heterojunction nanowires, cobalt-silver heterojunction nanowires, manganese-silver heterojunction nanowires, cadmium-silver heterojunction nanowires, indium-silver heterojunction nanowires, tin-silver heterojunction nanowires, tungsten Silver heterojunction nanowires, platinum-silver heterojunction nanowires, aluminum-gold heterojunction nanowires, nickel-gold heterojunction nanowires, cobalt-gold heterojunction nanowires, manganese-gold heterojunction nanowires, cadmium-gold heterojunction nanowires Mass junction nanowires, indium-gold heterojunction nanowires, tin-gold heterojunction nanowires, tungsten-gold heterojunction nanowires, cobalt-nickel heterojunction nanowires, manganese-nickel heterojunction nanowires, cadmium-nickel heterojunction nanowires wire, indium-nickel heterojunction nanowire, tin-nickel heterojunction nanowire, tungsten-nickel heterojunction nanowire, platinum-nickel heterojunction nanowire, cadmium-manganese heterojunction nanowire, indium-manganese heterojunction nanowire, Tin-manganese heterojunction nanowires, tungsten-manganese heterojunction nanowires, platinum-manganese heterojunction nanowires, indium-cadmium heterojunction nanowires, tin-cadmium heterojunction nanowires, tungsten-cadmium heterojunction nanowires, platinum-cadmium heterojunction nanowires Heterojunction nanowires, tin-indium heterojunction nanowires, tungsten-indium heterojunction nanowires, platinum-indium heterojunction nanowires, tungsten-tin heterojunction nanowires, platinum-tin heterojunction nanowires or platinum-tungsten heterojunction One or more of the junction nanowires.

The polymer electrode material is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) or 3,4-polyethylenedioxythiophene.

A method for manufacturing a substrate for a biodegradable flexible optoelectronic device, comprising the following steps:

① Clean the rigid substrate with surface roughness less than 1nm, and dry it with dry nitrogen after cleaning;

② Prepare flexible substrates on rigid substrates by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing, The flexible substrate is shellac, and the shellac is mixed with a dual-curing adhesive with a mass ratio of 0.3-4%. The dual-curing adhesive is composed of a dual-curing system, and the dual-curing system is UV-curing- One or more of thermal curing system, UV curing-microwave curing system, UV curing-anaerobic curing system and UV curing-electron beam curing system.

③ UV light treatment is carried out on the flexible substrate obtained in step ②, and photocuring is carried out;

④ Put the flexible substrate into a heating furnace for heat curing or put it in a microwave oven for microwave curing;

At the same time, steps ③ and ④ can be interchanged, that is, heat curing or microwave curing is performed first, and then UV curing is performed;

⑤ Prepare the conductive layer on the surface of the flexible substrate by roller coating, LB film method, drop coating, spray coating, pulling method, inkjet printing or screen printing method;

⑥UV treatment is performed on the flexible substrate obtained in step ⑤, and photocuring is carried out;

⑦Peel off the flexible substrate from the rigid substrate to form a substrate for flexible optoelectronic devices;

Further, after the fabrication is completed, the degradation characteristics, square resistance, surface morphology, water-oxygen transmittance and light transmittance of the substrate for flexible optoelectronic devices are tested.

A method for manufacturing a substrate for a biodegradable flexible optoelectronic device, characterized in that it comprises the following steps:

① Rigid substrates with surface roughness less than 1nm should be cleaned, and then dried with dry nitrogen after cleaning;

② Prepare flexible substrates on rigid substrates by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing, The flexible substrate is shellac, and the shellac is mixed with a dual-curing adhesive with a mass ratio of 0.3-4%. The dual-curing adhesive is composed of a dual-curing system, and the dual-curing system is UV-curing- One or more of thermal curing system, UV curing-microwave curing system, UV curing-anaerobic curing system and UV curing-electron beam curing system.

③ UV light treatment is carried out on the flexible substrate obtained in step ②, and photocuring is carried out;

④ Place the flexible substrate in a vacuum environment for anaerobic curing or electron beam curing;

⑤ Prepare the conductive layer on the surface of the flexible substrate by roller coating, LB film method, drop coating, spray coating, pulling method, inkjet printing or screen printing method;

⑥UV treatment is performed on the flexible substrate obtained in step ⑤, and photocuring is carried out;

⑦Peel off the flexible substrate from the rigid substrate to form a substrate for flexible optoelectronic devices;

Further, after the fabrication is completed, the degradation characteristics, square resistance, surface morphology, water-oxygen transmittance and light transmittance of the substrate for flexible optoelectronic devices are tested.

Compared with prior art, the beneficial effect of the present invention is:

(1) Add an appropriate amount of double-curing glue to the shellac, and cross-link the molecules after the double-curing treatment to prevent the crystallization of the resin molecules in the shellac, thereby reducing light scattering and improving the light transmittance of the flexible substrate , thus greatly improving the performance of flexible optoelectronic devices.

(2) In the shellac, an appropriate amount of double curing glue is mixed, and the molecules are cross-linked after the double curing treatment, thereby increasing the flexibility of the shellac.

(3) The shellac mixed with an appropriate amount of double-cured glue after the double-cured treatment has a tighter molecular arrangement, which effectively improves the water-oxygen barrier capacity.

(4) The adhesion ability between the flexible substrate and the conductive film is effectively increased, and the performance of the device is improved. (5) The production cost and process difficulty of the substrate can be greatly reduced by adopting the preparation method provided in the present invention.

Description of drawings

Fig. 1 is a schematic structural view of a substrate for a biodegradable flexible optoelectronic device of the present invention;

Marks in the figure: 1. conductive layer, 2. flexible substrate.

Detailed ways

The present invention will be further described below in conjunction with the embodiments, and the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other used embodiments obtained by persons of ordinary skill in the art without creative efforts all belong to the protection scope of the present invention.

With reference to the accompanying drawings, the substrate for biodegradable flexible optoelectronic devices of the present invention includes a flexible substrate and a conductive layer. Shellac, the mass ratio of the dual-curing glue in the shellac is 0.3-4%, and the double-curing glue is composed of a dual-curing system, and the dual-curing system is a UV-curing-heat-curing system, a UV-curing- One or more of microwave curing system, UV curing-anaerobic curing system or UV curing-electron beam curing system, the dual curing system is completed through two independent curing stages, one of which is With UV light curing reaction, another curing stage is dark reaction.

The flexible substrate 2 in the present invention is the support of the conductive layer. It has a certain bending performance, a certain ability to prevent moisture and oxygen penetration, has good flatness, and has good light transmission.

In the present invention, the conductive layer 1 is required to have good film-forming properties and good electrical conductivity, and graphene, carbon nanotubes, metal elemental nanowires, metal alloy nanowires, metal heterojunction nanowires, zinc oxide, and titanium oxide are usually used. , indium tin oxide or one or more of polymer electrode materials.

The dual curing system is the following system:

① Radical UV curing-heat curing system, weight composition:

The curing process is: UV curing first, then heating and curing, and then UV curing; or heating and curing first, then UV curing, and then heating and curing;

② Radical UV curing-microwave curing system, weight composition:

The curing process is: UV curing first, then microwave curing, and then UV curing; or microwave curing first, then UV curing, and then heating or microwave curing;

③Free radical UV curing-anaerobic curing system, weight composition:

The curing process is: firstly carry out ultraviolet light curing, then the substrate which is not exposed to light and under anoxic conditions will automatically undergo anaerobic curing reaction, and then carry out ultraviolet light curing;

④ Radical UV curing-electron beam curing system, weight composition:

The curing process is: first UV curing, then electron beam curing under vacuum, and then UV curing;

⑤Cationic UV curing-thermal curing system, weight composition:

The curing process is: UV curing first, then heating and curing, and then UV curing; or heating and curing first, then UV curing, and then heating and curing;

⑥Cationic UV curing-microwave curing system, weight composition:

The curing process is: UV curing first, then microwave curing, and then UV curing; or microwave curing first, then UV curing, and then heating or microwave curing;

⑦Cationic UV curing-anaerobic curing system, weight composition:

The curing process is: firstly carry out ultraviolet light curing, then the substrate which is not exposed to light and under anoxic conditions will automatically undergo anaerobic curing reaction, and then carry out ultraviolet light curing;

Or ⑧ cationic UV curing - electron beam curing system, weight composition:

The curing process is: first UV curing, then electron beam curing under vacuum, and then UV curing.

The free radical thermal curing agent is ethylenediamine, hexamethylenediamine, triethylenetetramine, hydroxyethyldiethylenetriamine, hydroxyisopropyldiethylenetriamine, polyoxalic acid adipamide, dimethylaminopropylamine , tetramethylpropylenediamine, dicyandiamide, diaminodiphenylsulfone, diaminodiphenylmethane, m-phenylenediamine, diethyltoluenediamine, N-(aminopropyl)-toluene di Amine, dimethylethanolamine, dimethylbenzylamine, triethylbenzylamine chloride, benzyl-dimethylamine, N-benzyldimethylamine, 2,4,6,-tri-(dimethylamine methyl)-phenol, phenol formaldehyde hexamethylenediamine, N,N-dimethylbenzylamine, 2-ethylimidazole, 2-phenylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl Base-4-methylimidazole, 1-(2-aminoethyl)-2-methylimidazole, maleic anhydride, diphenyl ether tetracarboxylic dianhydride, phthalic anhydride, trimellitic anhydride, tetra Bromophthalic anhydride, polynonacetic anhydride, sebacic acid dihydrazide, adipic acid dihydrazide, carbonate dihydrazide, oxalic acid dihydrazide, succinic acid dihydrazide, adipate dihydrazide, N-amino Polyacrylamide, sebacic acid hydrazide, isophthalic acid hydrazide, p-hydroxybenzoic acid hydrazide, azelaic acid dihydrazide, isophthalic acid dihydrazide, ferrocene tetrafluoroborate, trimer Triallyl cyanate, toluene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, trimethylhexamethylene diisocyanate, dicyclohexylmethane diisocyanate, xylylene diisocyanate, tetramethylxylylene diisocyanate diisocyanate, methylstyrene isocyanate, hexahydrotoluene diisocyanate, trityl methane-4,4',4'-triisocyanate, diaminodiphenylmethane, N-p-chlorophenyl-N-N-di Methylurea, 3-phenyl-1,1-dimethylurea, 3-p-chlorophenyl-1,1-dimethylurea, 4,4'-diaminodiphenylbisphenol, polyurethane Ester, urea-formaldehyde resin, epoxy-ethylenediamine carbamate, 2,4,6-tris(dimethylaminomethyl)phenol, 2,4-diaminotoluene, polyurethane, methyl etherified urea-formaldehyde Resin, tris(3-aminopropyl)amine, 2-aminoethyl-bis(3-aminopropyl)amine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylbis Phenol, 4,4'-diaminodiphenylsulfone, tris(3-aminopropyl)amine, melamine resin, benzomelamine resin, hexamethylolmelamine resin, hexamethoxymethylmelamine resin, urea-melamine formaldehyde resin , polyester melamine, trichloroisocyanurate, aminotriazine resin, urethane acrylate, 4-aminopyridine resin, N-β-aminoethyl aminopolyester resin, α-aminopyridine resin, amino Diphenyl ether resin, aminophosphoric acid resin, hydroxyethylamino polyester resin; the microwave curing agent and the thermal curing agent use the same material or different materials; the anaerobic curing agent includes: triethylene glycol dimethacrylate Ester, polyethylene glycol dimethacrylate, triethylene glycol dimethacrylate, ethylene glycol dimethacrylate, hydroxyethyl or hydroxypropyl methacrylate, methoxylated polyethylene Diol methacrylate, triethylene glycol phthalate, β-hydroxyethyl methacrylate, triethylene glycol phthalate Ethylene Glycol Dimethacrylate, Thiodiethylene Glycol Dimethacrylate, Bis(Diethylene Glycol Acrylate) Phthalate, Ethoxylated Bisphenol A Dimethacrylate, Dimethacrylic Acid Bisphenol A glycol ester, ethylene glycol methacrylate, triethylene glycol dimethacrylate, ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, acetal Ethanol dimethacrylate, epoxy resin methacrylate, diethylene glycol dimethacrylate; the electron beam curing agent includes: triphenolyl methane glycidyl ether epoxy resin, dicyclopentadiene Alkenyl bisphenol type epoxy resin, bisphenol A type vinyl ester resin, epoxy vinyl ester resin, epoxy acrylate resin, maleimide resin, 4,4'-diphenylmethane bismaleimide Amine, bisphenol A-diphenyl ether bismaleimide, bisphenol A maleic acid vinyl resin, brominated vinyl ester resin, novolac epoxy vinyl ester resin, methylolated bisphenol A Type epoxy resin, bisphenol A acrylate, urethane acrylate, bisphenol A epoxy vinyl ester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol A type epoxy Acrylate resin, bisphenol A diglycidyl ether or bisphenol A epoxy chloroacrylate resin;

The photoinitiator is benzoin or benzoin derivatives, and the benzoin derivatives are benzoin methyl ether, benzoin ether, acetophenone derivatives or benzoin isopropyl ether; the cationic photoinitiator is aromatic sulfonium salt, iodonium salt or ferrocene salts; photosensitizers are benzophenone, thioxanthraquinone or Michler's ketone; additives include plasticizers, thixotropic agents and fillers;

Plasticizers are dioctyl phthalate, dibutyl phthalate, tributoxy vinyl phosphate, polyvinyl butyral, acetyl tributyl citrate, dimethyl phthalate , diethyl phthalate, bis(butoxyethoxy) ethyl adipate, isopropyl titanate, n-butyl titanate, citrate, trimellitic acid (2-ethyl) Hexyl ester, Di(2-ethyl)hexyl phthalate, Di(2-ethyl)hexyl sebacate, Diethylene glycol dibenzoate, Phthalic anhydride, Dipropylene glycol Dibenzoate and chlorosulfonated polyethylene; the coupling agents include methylvinyldichlorosilane, methylhydrogendichlorosilane, dimethyldichlorosilane, dimethylmonochlorosilane, vinyltrichlorosilane, Chlorosilane, γ-Aminopropyltrimethoxysilane, Dimethicone, Polyhydromethylsiloxane, Polymethylmethoxysiloxane, γ-Propyltrimethoxymethacrylate Silane, γ-aminopropyltriethoxysilane, γ-glycidyl ether propyltrimethoxysilane, aminopropyl silsesquioxane, γ-methacryloxypropyltrimethoxysilane, long Alkyltrimethoxysilane, Vinyltriethoxysilane, Vinyltrimethoxysilane, γ-Chloropropyltriethoxysilane, Bis-(γ-triethoxysilylpropyl), Aniline Methyltriethoxysilane, N-β(aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-γ-aminopropyltriethoxysilane, N- β(aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-(2,3-glycidoxy)propyltrimethoxysilane, γ-(methacryloyloxy)propyl Trimethylsilane, γ-mercaptopropyltrimethoxysilane or γ-mercaptopropyltriethoxysilane.

The material of the conductive layer is one or more of graphene, carbon nanotubes, metal elemental nanowires, metal alloy nanowires, metal heterojunction nanowires, zinc oxide, titanium oxide, indium tin oxide or polymer electrode materials Various.

The metal nanowires or iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowires, cobalt nanowires, manganese nanowires, cadmium nanowires, indium nanowires, tin nanowires , one or more of tungsten nanowires or platinum nanowires.

The metal alloy nanowires are copper-iron alloy nanowires, silver-iron alloy nanowires, gold-iron alloy nanowires, aluminum-iron alloy nanowires, nickel-iron alloy nanowires, cobalt-iron alloy nanowires, manganese-iron alloy nanowires, cadmium-iron alloy nanowires, and indium-iron alloy nanowires. wire, tin-iron alloy nanowire, tungsten-iron alloy nanowire, platinum-iron alloy nanowire, silver-copper alloy nanowire, gold-copper alloy nanowire, aluminum-copper alloy nanowire, nickel-copper alloy nanowire, cobalt-copper alloy nanowire, manganese-copper alloy Nanowires, cadmium-copper alloy nanowires, tin-copper alloy nanowires, tungsten-copper alloy nanowires, platinum-copper alloy nanowires, gold-silver alloy nanowires, aluminum-silver alloy nanowires, nickel-silver alloy nanowires, cobalt-silver alloy nanowires , manganese-silver alloy nanowires, cadmium-silver alloy nanowires, indium-silver alloy nanowires, tin-silver alloy nanowires, tungsten-silver alloy nanowires, platinum-silver alloy nanowires, aluminum-gold alloy nanowires, nickel-gold alloy nanowires, cobalt Gold alloy nanowires, manganese-gold alloy nanowires, cadmium-gold alloy nanowires, indium-gold alloy nanowires, tin-gold alloy nanowires, tungsten-gold alloy nanowires, cobalt-nickel alloy nanowires, manganese-nickel alloy nanowires, cadmium-nickel alloy nanowires wire, indium-nickel alloy nanowire, tin-nickel alloy nanowire, tungsten-nickel alloy nanowire, platinum-nickel alloy nanowire, cadmium-manganese alloy nanowire, indium-manganese alloy nanowire, tin-manganese alloy nanowire, tungsten-manganese alloy nanowire, Platinum-manganese alloy nanowires, indium-cadmium alloy nanowires, tin-cadmium alloy nanowires, tungsten-cadmium alloy nanowires, platinum-cadmium alloy nanowires, tin-indium alloy nanowires, tungsten-indium alloy nanowires, platinum-indium alloy nanowires, tungsten-tin One or more of alloy nanowires, platinum-tin alloy nanowires or platinum-tungsten alloy nanowires.

The metal heterojunction nanowires are copper-iron heterojunction nanowires, silver-iron heterojunction nanowires, gold-iron heterojunction nanowires, aluminum-iron heterojunction nanowires, nickel-iron heterojunction nanowires, cobalt Iron heterojunction nanowires, manganese-iron heterojunction nanowires, cadmium-iron heterojunction nanowires, indium-iron heterojunction nanowires, tin-iron heterojunction nanowires, tungsten-iron heterojunction nanowires, platinum-iron heterojunction nanowires Mass junction nanowires, silver-copper heterojunction nanowires, gold-copper heterojunction nanowires, aluminum-copper heterojunction nanowires, nickel-copper heterojunction nanowires, cobalt-copper heterojunction nanowires, manganin-copper heterojunction Nanowires, cadmium-copper heterojunction nanowires, tin-copper heterojunction nanowires, tungsten-copper heterojunction nanowires, platinum-copper heterojunction nanowires, gold-silver heterojunction nanowires, aluminum-silver heterojunction nanowires , nickel-silver heterojunction nanowires, cobalt-silver heterojunction nanowires, manganese-silver heterojunction nanowires, cadmium-silver heterojunction nanowires, indium-silver heterojunction nanowires, tin-silver heterojunction nanowires, tungsten Silver heterojunction nanowires, platinum-silver heterojunction nanowires, aluminum-gold heterojunction nanowires, nickel-gold heterojunction nanowires, cobalt-gold heterojunction nanowires, manganese-gold heterojunction nanowires, cadmium-gold heterojunction nanowires Mass junction nanowires, indium-gold heterojunction nanowires, tin-gold heterojunction nanowires, tungsten-gold heterojunction nanowires, cobalt-nickel heterojunction nanowires, manganese-nickel heterojunction nanowires, cadmium-nickel heterojunction nanowires wire, indium-nickel heterojunction nanowire, tin-nickel heterojunction nanowire, tungsten-nickel heterojunction nanowire, platinum-nickel heterojunction nanowire, cadmium-manganese heterojunction nanowire, indium-manganese heterojunction nanowire, Tin-manganese heterojunction nanowires, tungsten-manganese heterojunction nanowires, platinum-manganese heterojunction nanowires, indium-cadmium heterojunction nanowires, tin-cadmium heterojunction nanowires, tungsten-cadmium heterojunction nanowires, platinum-cadmium heterojunction nanowires Heterojunction nanowires, tin-indium heterojunction nanowires, tungsten-indium heterojunction nanowires, platinum-indium heterojunction nanowires, tungsten-tin heterojunction nanowires, platinum-tin heterojunction nanowires or platinum-tungsten heterojunction One or more of the junction nanowires.

The polymer electrode material is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) or 3,4-polyethylenedioxythiophene.

A method for manufacturing a substrate for a biodegradable flexible optoelectronic device, comprising the following steps:

① Clean the rigid substrate with surface roughness less than 1nm, and dry it with dry nitrogen after cleaning;

② Prepare flexible substrates on rigid substrates by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing, The flexible substrate is shellac, and the shellac is mixed with a dual-curing adhesive with a mass ratio of 0.3-4%. The dual-curing adhesive is composed of a dual-curing system, and the dual-curing system is UV-curing- One or more of thermal curing system, UV curing-microwave curing system, UV curing-anaerobic curing system and UV curing-electron beam curing system.

③ UV light treatment is carried out on the flexible substrate obtained in step ②, and photocuring is carried out;

④ Put the flexible substrate into a heating furnace for heat curing or put it in a microwave oven for microwave curing;

At the same time, steps ③ and ④ can be interchanged, that is, heat curing or microwave curing is performed first, and then UV curing is performed;

⑤ Prepare the conductive layer on the surface of the flexible substrate by roller coating, LB film method, drop coating, spray coating, pulling method, inkjet printing or screen printing method;

⑥UV treatment is performed on the flexible substrate obtained in step ⑤, and photocuring is carried out;

⑦Peel off the flexible substrate from the rigid substrate to form a substrate for flexible optoelectronic devices.

After the production is completed, the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of the substrate for flexible optoelectronic devices are tested.

A method for manufacturing a substrate for a biodegradable flexible optoelectronic device, characterized in that it comprises the following steps:

① Rigid substrates with surface roughness less than 1nm should be cleaned, and then dried with dry nitrogen after cleaning;

② Prepare flexible substrates on rigid substrates by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing, The flexible substrate is shellac, and the shellac is mixed with a dual-curing adhesive with a mass ratio of 0.3-4%. The dual-curing adhesive is composed of a dual-curing system, and the dual-curing system is UV-curing- One or more of thermal curing system, UV curing-microwave curing system, UV curing-anaerobic curing system and UV curing-electron beam curing system.

③ UV light treatment is carried out on the flexible substrate obtained in step ②, and photocuring is carried out;

④ Place the flexible substrate in a vacuum environment for anaerobic curing or electron beam curing;

⑤ Prepare the conductive layer on the surface of the flexible substrate by roller coating, LB film method, drop coating, spray coating, pulling method, inkjet printing or screen printing method;

⑥UV treatment is performed on the flexible substrate obtained in step ⑤, and photocuring is carried out;

⑦Peel off the flexible substrate from the rigid substrate to form a substrate for flexible optoelectronic devices.

After the fabrication is completed, the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of the substrate for flexible optoelectronic devices are tested.

Shellac is a kind of natural resin with unique and excellent properties, which is widely used in industries such as food, medicine, plastics, military, electrical, rubber, printing ink, leather, paint, dyestuff and adhesive. Shellac is non-toxic, and is mainly used in the pharmaceutical industry for moisture-proof sugar coating of pills and tablets, drug sealing, glazing, enteric drug coating, and capsules of nutrients and cosmetics developed in recent years. Shellac coatings can also be used in many aspects of the food industry. They can be absorbed by the human body and can be degraded naturally. For example, after coating shellac coatings on candies and cakes, they can become very beautiful and bright, and can prevent moisture, caking and deterioration. and prolong storage time. After the fruit is coated with shellac paint, it can inhibit water evaporation in a certain period of time, keep fresh, reduce rot, improve appearance, and produce the effect of improving economic benefits. Shellac products have good tensile strength, abrasion resistance, resilience and hardness, and have ideal mechanical properties. In terms of electrical properties, shellac has high dielectric strength and is non-conductive after being dominated by an arc. In addition, it has good adhesion and thermoplasticity, and has special uses in electrical insulation. In addition, the film formed by hydrolyzed shellac is softer than the film formed by natural shellac, which is related to the increase of soft resin in shellac. However, the water vapor permeability of hydrolyzed shellac film is lower than that of natural shellac film, so some treatment is required to ensure the water and oxygen barrier ability of shellac.

Because ultraviolet light curing technology uses ultraviolet light as the curing energy, it has its own limitations, which are mainly manifested in: there are certain restrictions on the shape of the applied substrate, the curing speed of the colored system is low, and the deep layer and the shadow area of the object It is difficult to cure, and the large volume shrinkage after curing causes problems such as poor adhesion and photoinitiator residue. These deficiencies have affected the further development and application of UV curing technology, and the disadvantage of large volume shrinkage after curing has also seriously affected the application range of UV curing materials. Dual curing (dual-curing) technology is the combination of light curing and other curing methods.

In the dual curing system, the crosslinking or polymerization reaction of the system is completed through two independent stages with different reaction principles, one of which is through the light curing reaction, while the other is through the dark reaction. Among them, the light curing can be free radical UV curing or cationic UV curing; the dark curing can be thermal curing, electron beam curing, anaerobic curing and microwave polymerization. In this way, light curing can be used to quickly set the system or reach surface dryness, while dark reaction can be used to completely cure the shadow part or bottom part.

Both light curing and dark curing stages can be aimed at free radical and cationic UV curing agents, so there are free radical and cationic thermal curing.

Below are some typical systems and some specific operating parameters.

In the substrate for flexible optoelectronic devices, the free radical UV curing agent is polyester-acrylate, epoxy-acrylate, urethane-acrylate, polyether-acrylate or substances with the following molecular structures;

HS(CH ₂ CH ₂ O) _n CH ₂ CH ₂ SH or

Cationic UV curing agents include: epoxy resin or modified epoxy resin.

Plasticizers are dioctyl phthalate, dibutyl phthalate, tributoxy vinyl phosphate, polyvinyl butyral, acetyl tributyl citrate, dimethyl phthalate , diethyl phthalate, bis(butoxyethoxy) ethyl adipate, isopropyl titanate, n-butyl titanate, citrate, trimellitic acid (2-ethyl) Hexyl ester, Di(2-ethyl)hexyl phthalate, Di(2-ethyl)hexyl sebacate, Diethylene glycol dibenzoate, Phthalic anhydride, Dipropylene glycol Dibenzoate and chlorosulfonated polyethylene; the coupling agents include methylvinyldichlorosilane, methylhydrogendichlorosilane, dimethyldichlorosilane, dimethylmonochlorosilane, vinyltrichlorosilane, Chlorosilane, γ-Aminopropyltrimethoxysilane, Dimethicone, Polyhydromethylsiloxane, Polymethylmethoxysiloxane, γ-Propyltrimethoxymethacrylate Silane, γ-aminopropyltriethoxysilane, γ-glycidyl ether propyltrimethoxysilane, aminopropyl silsesquioxane, γ-methacryloxypropyltrimethoxysilane, long Alkyltrimethoxysilane, Vinyltriethoxysilane, Vinyltrimethoxysilane, γ-Chloropropyltriethoxysilane, Bis-(γ-triethoxysilylpropyl), Aniline Methyltriethoxysilane, N-β(aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-γ-aminopropyltriethoxysilane, N- β(aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-(2,3-glycidoxy)propyltrimethoxysilane, γ-(methacryloyloxy)propyl One or more of trimethylsilane, γ-mercaptopropyltrimethoxysilane or γ-mercaptopropyltriethoxysilane.

Free radical active diluents are divided into the first-generation acrylic multifunctional monomers developed earlier, the second-generation acrylic multifunctional monomers developed recently, and the more excellent third-generation acrylic monomers.

Monofunctional reactive diluents are: styrene, N-vinylpyrrolidone, isooctyl acrylate, hydroxyethyl acrylate and isobornyl acrylate, methacrylate phosphate and isobornyl methacrylate, the latter two being good plasticizing and toughening monomer.

Difunctional reactive diluents are: triethylene glycol diacrylate, tripropylene glycol diacrylate, ethylene glycol diacrylate, polyethylene glycol diacrylate, neopentyl glycol diacrylate, and propoxyneopentyl Diol diacrylate, acrylate functional monomers mainly include 1,6-hexanediol diacrylate (HDDA), 1,4-butanediol diacrylate (BDDA), propylene glycol diacrylate (DPGDA), propane Triol Diacrylate (TPGDA), Trifunctional Trimethylolpropane Triacrylate (TMPTA), Pentaerythritol Triacrylate (PETA), Trihydroxymethylpropane Triol Triacrylate (TMPTMA), Trimethylolpropane Triacrylate Propane Triacrylate, Propoxylated Trihydroxymethylpropane Triacrylate, Pentaerythritol Tripropenol, Propoxylated Pentaerythritol Propyl Ester, Methyl N,N-Dihydroxyethyl-3-Aminopropionate , triethylene glycol dimethacrylate, long-chain aliphatic hydrocarbon glycidyl ether acrylic acid, resorcinol diglycidyl ether, dipentaerythritol pentaacrylate, tripropylene glycol diacrylate, phthalate di Diethyl alcohol diacrylate (PDDA). They replace less reactive first-generation acrylic monofunctional monomers. However, with the rapid development of UV curing technology, their shortcomings of great irritation to the skin have emerged.

The second-generation acrylic polyfunctional monomer mainly introduces ethoxy or propoxy groups into the molecule, which overcomes the disadvantage of high irritation, and should also have higher activity and curing degree. Such as ethoxylated trimethylolpropane triol triacrylate (TMP(EO)TMA), propoxylated trimethylolpropane triol triacrylate (TMP(PO)TMA), propoxylated propane Triol Triacrylate (G(PO)TA). The third-generation acrylic monomer is mainly methoxy-containing acrylate, which better solves the contradiction between high curing speed, shrinkage rate and low curing degree. Such materials include 1,6-hexanediol methoxy monoacrylate (HDOMEMA), ethoxylated neopentyl glycol methoxy monoacrylate (TMP(PO)MEDA). After the alkoxy group is introduced into the molecule, the viscosity of the monomer can be reduced, and the irritation of the monomer can be reduced at the same time.

The introduction of alkoxy groups also greatly improves the compatibility of diluent monomers. Vinyltriethoxysilane (A15I) and γ-methacryloxypropyltrimethoxysilane (A174) can be used as monomers .

Various active epoxy resin diluents and various cyclic ethers, cyclic lactones, vinyl ether monomers, etc. can be used as diluents for cationic photocurable resins. Among them, vinyl ether compounds and oligomers have fast curing speed, moderate viscosity, odorless and non-toxic, and can be used in conjunction with epoxy resin. Vinyl ether monomers include: 1,2,3-propanetriol glycidyl ether (EPON-812), triethylene glycol divinyl ether (DVE-3), 1,4-butanediol vinyl ether ( HBVE), cyclohexyl vinyl ether (CHVE), perfluoromethyl vinyl ether (PMVE), perfluoro-n-propyl vinyl ether, isobutyl vinyl ether, hydroxybutyl vinyl ether, vinyl ethyl ether, Ethyl vinyl ether, ethyl vinyl ether propylene, ethylene glycol monoallyl ether, hydroxybutyl vinyl ether, butyl vinyl ether, chlorotrifluoroethylene (CTFE), triethylene glycol divinyl ether , vinyl methyl ether, vinyl n-butyl ether, dodecyl vinyl ether (DDVE), cyclohexyl vinyl ether, tribenzylphenol polyoxyethylene ether, tetrafluoroethylene-perfluoropropyl vinyl ether , tetrafluoroethylene-perfluoropropyl vinyl ether, tert-butyl vinyl ether:

Epoxy compound monomers include: 3,4-epoxycyclohexylcarboxylate-3′,4′-epoxycyclohexylmethyl ester (ERL-4221), bisphenol A epoxy resin (EP), epoxy Acrylates, epoxy vinyl esters, epoxy acrylates, epoxy methacrylates, water soluble epoxy itaconate resins:

The function of the photoinitiator is to generate free radicals through decomposition after absorbing ultraviolet light energy, thereby initiating the polymerization of unsaturated bonds in the system, and crosslinking and curing into a whole. Commonly used free radical photoinitiators include cracking type and hydrogen extraction type.

Cleavage-type photoinitiators: Cleavage-type photoinitiators mainly include benzoin ethers (benzoin ethers), benzil ketals, and acetophenones. The cleavage-type photoinitiator cracks after absorbing ultraviolet light, generating two free radicals, which initiate the polymerization of unsaturated groups. Benzoin ethers (benzoin ethers) include: benzoin, benzoin methyl ether, benzoinethyl ether, benzoin butyl ether, benzoin oxime, benzoin isopropyl ether; acyl Phosphine oxides include: 2,4,6-trimethylbenzoyldiphenylphosphine oxide (TPO) and (2,4,6-trimethylbenzoyl)phenylphosphine oxide (BAPO phenyl bis(2, 4,6-trimethylbenzoyl)phosphine oxide), phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide (819), tetramethylpiperidone oxide (TMPO), triethyl phosphate (TEPO), they are ideal photoinitiators, have high photoinitiation activity, absorb long-wave near ultraviolet rays, are suitable for white coatings and thick films, and have good stability and will not change color or faded.

Hydrogen-extracting initiators: Hydrogen-extracting initiators mainly include benzophenones and thioxanthones. Among them, the thioxanthone photoinitiator has a maximum absorption wavelength of 380-420nm in the near-ultraviolet region, has strong absorption capacity and hydrogen abstraction capacity, and has high initiation efficiency. The hydrogen-extracting initiator must have a hydrogen donor as a synergistic component, otherwise, the initiation efficiency is too low to be put into practice. The triplet carbonyl radical is more likely to extract hydrogen from the tertiary carbon of the hydrogen donor molecule than the secondary carbon or methyl group, and the hydrogen attached to heteroatoms such as oxygen or nitrogen is easier to extract than the hydrogen on carbon atoms. Such hydrogen donors include amines, alcohol amines (triethanolamine, methyldiethanolamine, triisopropanolamine, etc.), mercaptans, and N,N-diethyl-p-dimethylaminobenzamide.

Benzophenone photoinitiation system, benzophenone needs to be used in combination with alcohol, ether or amine to make vinyl monomers photopolymerize. Mainly include: benzophenone, thioxanthraquinone, Michler's ketone, dimethoxybenzyl phenyl ketone (DMPA), α-hydroxy-2,2 dimethylacetophenone (1173), α- Hydroxycyclohexylphenylketone (184), α-aminoalkylphenone, 2-methyl-1(4-methylmercaptophenyl)-2-morpholinoacetone (MMMP), 2,2'-di Benzamidodiphenyl disulfide (DBMD), (4-dimethylaminophenyl)-(1-piperidinyl)-methanone, isopropylthioxanthone (ITX), (4-di Methylaminophenyl)-(4-morpholino)-methanone, 2-hydroxy-2-methyl-1-phenyl-1-phenyl-1-propanone, diphenoxybenzophenone, hydroxy- 2-Methylphenylpropan-1-one. And mixed systems, such as the coordinated initiator system of benzophenone and tertiary ammonia that can eliminate the inhibition of oxygen in the film to free radical polymerization; Michler's ketone and benzophenone are used in conjunction to obtain cheaper and very effective initiator system.

Cationic photoinitiator: Aromatic sulfonium salt and iodonium salt initiators have excellent high temperature stability and are also stable when combined with epoxy resin, so they are widely used in cationic curing systems. Such initiators include: xylyl iodide hexafluorophosphate (PI810), hydroxyphenyl iodonium salt (HTIB), 4,4-didodecylphenyliodonium hexafluoroantimonate, xylyl iodide Onium salt, iodonium diphenylhexafluoroarsenate, [4-(2-hydroxy-3-butoxy-1-propoxy)phenyl]phenyliodonium-hexafluoroantimonate, [4- (p-benzoylphenylthio)phenyl]phenyliodonium hexafluorophosphate, [4-(4-benzoylphenoxy)phenyl]phenyliodonium hexafluorophosphate, 4-(p-benzoylphenoxy Acylphenylthio)phenyl]phenyliodonium hexafluorophosphate, 4,4'-dimethyldiphenyliodonium hexafluorophosphate (IHT-PI 820), 4,4'-diacetamido Diphenyliodohexafluorophosphate, 37-dinitrodibenzocyclic iodonium salt and 3,7-dinitrodibenzocyclic bromide salt, tetrafluoroborate diaryliodonium salt, 3 ,3'-Dinitrodiphenyliodonium salt, 3,3'-dinitrodiphenyliodonium salt and several 2,2'-disubstituted (iodo, bromine, chlorine)-5,5' -Dinitrophenyliodonium salt, 2-[2-(3-indolizine)vinyl]-1-methylquinolinium iodide, 4-(2-benzoxazole) iodide- N-methylpyridinium salt, 3-nitrophenyldiphenylthiohexafluorophosphate, triarylphosphine dihydroimidazolium salt, triarylphosphine 1,1'-binaphthyldihydroimidazolium salt, 3 ,7-Dinitrodibenzobromopentacyclic salt, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium bromide, (4-phenylsulfanyl-phenyl)diphenylsulfide Onium hexafluorophosphate, 4-(phenylthio)triphenylsulfonium hexafluorophosphate, 3,3′-dinitrodiphenyliodohexafluorophosphate, 3-nitrophenyldiphenylsulfur Hexafluorophosphate, triphenylsulfonium salt, 4-chlorophenyldiphenylthiohexafluorophosphate, 3-nitrophenyldiphenylthiohexafluorophosphate, 4-acetamidophenyldiphenyl Triphenylthiohexafluorophosphate, 3-benzoylphenyldiphenylthiohexafluorophosphate, triphenylthiofluoroborate, triphenylthiohexafluorophosphate, triphenylthiohexafluoroantimonate , 4-tolyldiphenylthiohexafluorophosphate, phosphorus hexafluoride triarylsulfonium salt, antimony hexafluoride triarylsulfonium salt, [4-(p-benzoylphenylthio)phenyl]phenyl Ionium hexafluorophosphate, 1-(4'-bromo-2'-fluorobenzyl)pyridinium salt, [4-(p-benzoylphenylthio)phenyl]phenyliodonium hexafluorophosphate, { 4-[4-(p-Nitrobenzoyl)phenylthio]phenyl}phenyliodonium hexafluorophosphate, {4-[4-(p-methylbenzoyl)phenylthio]phenyl}phenyl Ionium hexafluorophosphate, {4-[4-(p-methylbenzoyl)phenoxy]phenyl}phenyliodonium hexafluorophosphate, [4-(p-benzoylphenoxy)benzene] Phenyliodonium hexafluorophosphate, 4,4-didodecylphenyliodonium hexafluoroantimonate.

Ferrocene salts: The photoinitiating system of ferrocene salts is a new cationic photoinitiator developed after diaromatic iodonium salts and triaromatic sulfonium salts, mainly including: cyclopentadienyl-iron-benzene salt, Cyclopentadienyl-iron-toluene salt, cyclopentadienyl-iron-p-xylene salt, cyclopentadienyl-iron-naphthalene salt, cyclopentadienyl-iron-biphenyl salt, cyclopentadienyl Alkenyl-Iron-2,4-Dimethylacetophenone Salt, Acetyl-Cyclopentadienyl-Iron-p-Xylene Salt, Cyclopentadienyl-Iron-Anisole Salt, Cyclopentadiene Base-iron-diphenyl ether salt, cyclopentadienyl-iron-2,4-diethoxybenzene salt, ferrocene tetrafluoroborate, tolyl ferrocene tetrafluoroborate, cyclopentadiene Cyclopentadienyl-iron-anisole salt, cyclopentadienyl-iron-diphenyl ether salt, cyclopentadienyl-iron-1,4-diethoxybenzene salt, cyclopentadienyl-iron-chloro Benzene salt, cyclopentadienyl-iron-(1,4-diethoxybenzene) hexafluorophosphate, cyclopentadienyl-iron-diphenyl ether hexafluorophosphate, 1,10-o-diazepine Ferrous phenanthrene perchlorate, 1,10-phenanthrene ferrous sulfate cyclopentadienyl-iron-anisole salt, cyclopentadienyl-iron-diphenyl ether salt, [1 ,1'-bis(diphenylphosphino)ferrocene]nickel dichloride, vinyl ferrocene, N,N'-bis-ferrocenemethylene butanediamine quaternary ammonium salt, ferrocene formamide, Ferrocenylpropionic acid, Acetylferrocene, Ethylferrocene, Butyrylferrocene, Butylferrocene, N,N-Dimethyl-aminomethylferrocene, 1,1' -Dibenzoylferrocene, (3-carboxypropionyl)ferrocene, 1,1'-dibromoferrocene, aminoferrocene.

UV curing-heat curing system: It is found that the mechanical properties of the cured product after heat treatment have been significantly improved, and with the increase of epoxy components, the hybrid system has good adhesion on metal and other substrates. On the one hand, it is due to the small shrinkage of the epoxy compound during curing, and on the other hand, due to the elimination of the internal stress generated during the free radical photocuring during thermal curing. According to the substrate for flexible optoelectronic devices provided by the present invention, it is characterized in that the thermal curing agent in the thermal curing method includes: epoxy resins, isocyanates, amino resins and free radical thermal curing agents.

Epoxy resins include: aliphatic amines, aromatic amines, dicyandiamide, imidazoles, organic acid anhydrides, organic hydrazides, Lewis acid amines and microcapsules.

Aliphatic amines include: ethylenediamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, hydroxyethyldiethylenetriamine, hydroxyisopropyldiethylenetriamine, polyoxalic acid adipamide, Ethanolamine, tetramethylethylenediamine, diamine glycyrrhizinate, N-(2-hydroxyethyl)ethylenediamine, bis(4-aminophenoxy)-phenylphosphine oxide, bis(3-aminophenyl base) phenylphosphine oxide, tetrapropylene glycol diamine, N-hydroxyethyl ethylenediamine, methylcyclopentadiamine, polyether amine, phenalkamine curing agent (T-31), hydroxyethyl ethylenediamine, Isophoronediamine, menthanediamine, dimethylaminopropylamine, bis(4-amino-3-methylcyclohexyl)methane, tetramethylpropylenediamine, modified amine epoxy curing agent (593), Aliphatic amine epoxy curing agent (3380, TG-03, LX-502, D230), fatty amine modified adduct (HB-206, HB-205, HB-2512, HB-9305, HB-9409).

Dicyandiamide includes: dicyandiamide, 3,5 disubstituted aniline modified dicyandiamide derivatives (HT 2833, HT 2844), dicyandiamide (MD 02, prepared by the reaction of propylene oxide and dicyandiamide ), modified dicyandiamide derivatives (AEHD-610, AEHD-210), and derivatives containing the following molecular formula.

Aromatic amines include: diaminodiphenylsulfone (DDS), diaminodiphenylmethane (DDM), m-phenylenediamine (m PDA), 8-m-naphthalenediamine, diethyltoluenediamine, O-phenylenediamine, p-phenylenediamine, allyl aromatic diamine, N-(aminopropyl)-toluenediamine, isophorone diamine, dimethylethanolamine, dimethylbenylamine, triethyl Benzylamine chloride, benzyl-dimethylamine, N-benzyldimethylamine, 2,4,6,-tris-(dimethylaminomethyl)-phenol, phenol formaldehyde hexamethylenediamine, N,N -Dimethylbenzylamine (BDMA), N-p-carboxyphenylmaleimide (p-CPMD).

Imidazoles include: 1-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-methylimidazole, 1-8-aminoethyl-2-methylimidazole (AMz), 2-undecane Imidazole adipate di-salt, 2-ethylimidazole, 2-ethyl-4-methylimidazole (2E4Mz), 1-(2-aminoethyl)-2-methylimidazole, 1-cyano-2 -Ethyl-4-methylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole-carboxyl, 3-dimethylol-substituted imidazole derivatives, 1,3-diphenyl- 2-methylimidazole chloride, 1-decyl-2-ethylimidazole, modified imidazole (JH-0511, JH-0512, JH-0521).

Organic acid anhydrides include: epoxidized polybutadiene/anhydride, maleic anhydride, 70# anhydride (synthesized from butadiene and maleic anhydride), 647# anhydride (synthesized from dicyclopentadiene and maleic anhydride) Synthesis of olefinic anhydride), 308 tungoleic anhydride (synthesized from tung oil modified maleic anhydride, methyl endomethylene tetrahydrophthalic anhydride (MNA)), pyromellitic dianhydride (PMTA) ( Pyromellitic dianhydride mixed with maleic anhydride), methyl hexahydrophthalic anhydride (MeHHPA), diphenyl ether tetracarboxylic dianhydride, phthalic anhydride (PA), hexahydrophthalic anhydride (HHPA ), tetrahydrophthalic anhydride (THPA), methyltetrahydrophthalic anhydride, epoxidized polybutadiene/anhydride, trimellitic anhydride (TMA), tetrabromophthalic anhydride, polynonacetic anhydride (PAPA).

Organic hydrazides include: sebacic acid dihydrazide (SDH), adipic dihydrazide, carbonate dihydrazide, oxalic acid dihydrazide, succinic acid dihydrazide, adipate dihydrazide, N-aminopolypropylene Amide, N(CH2CH2CONHNH2)3, (H2NHNCOCH2CH2)2NCH2CH2N(CHCHCONHNH2)2, succinic acid hydrazide, sebacic acid hydrazide, isophthalic acid hydrazide, p-hydroxybenzoic acid hydrazide (POBH), azelaic acid diamide Hydrazine, isophthalic acid dihydrazide.

Lewis acid amines are composed of BF3, AlCl3, ZnCl2, PF5 and other Lewis acids and primary or secondary amines to form complexes, including: cyclopentadienyl cumene iron hexafluorophosphate (Irgacure 261), three Boron fluoride, ferrocene tetrafluoroborate.

Microcapsules include: cellulose, gelatin, polyvinyl alcohol, polyester, polysulfone.

Isocyanates include: triallyl cyanurate, toluene diisocyanate (TDI), diphenylmethane diisocyanate (MDI), polymethylene polyphenyl polyisocyanate (PAPI), hexamethylene diisocyanate (HDI), isofor Alone diisocyanate (IPDI), trimethylhexamethylene diisocyanate (TMDI), dicyclohexylmethane diisocyanate (HMDI), xylylene diisocyanate (XDI), tetramethylxylylene diisocyanate ( TMXDI), methylstyrene isocyanate (TMI), hexahydrotoluene diisocyanate (HTDI), nitrile rubber, heptaisocyanate, triphenylmethane-4,4',4'-triisocyanate, thiophosphoric acid tri(4 -isocyanatophenyl ester), tetraisocyanate, heptaisocyanate, biuret polyisocyanate, tetrahydrofuran polyether polyol-epoxy resin-isocyanate, trihydroxypolyoxypropylene polyol-isocyanate.

Amino resins include: diaminodiphenylmethane (DDM), N-p-chlorophenyl-N-N-dimethylurea, 3-phenyl-1,1-dimethylurea, 3-p-chlorophenyl- 1,1-dimethylurea, 4,4'-diaminodiphenylbisphenol, polyurethane, urea-formaldehyde resin, epoxy-ethylenediamine carbamate, N, N, N', N '-Tetrapropargyl-4,4'-diamino-diphenylmethane (TPDDM), 2,4,6-tris(dimethylaminomethyl)phenol, 2,4-diaminotoluene, 4,6- Tris(dimethylaminomethyl)phenol, polyurethane, methyl etherified urea-formaldehyde resin, tris(3-aminopropyl)amine, 2-aminoethyl-bis(3-aminopropyl)amine, N,N , N', N'-tetrakis(3-aminopropyl)ethylenediamine, 1-[bis(3-aminopropyl)amino]-2-propanol; N-(2-aminoethyl)-N- (3-aminopropyl)amine, 1-[(2-aminoethyl)-(3-aminopropyl)amino]-1-ethanol, 1-[(2-aminoethyl)-(3-aminopropyl base) amino] -2-propanol, 3-dimethylaminopropylamine, 4,4'-diaminodiphenylmethane (DDM), 4,4'-diaminodiphenylbisphenol, 4,4'-di Aminodiphenyl sulfone (DDS), tris(3-aminopropyl)amine, melamine resin, benzomelamine resin, hexamethylol melamine resin, methyl etherified melamine resin, methyl etherified benzomelamine resin, methyl etherified Urea melamine polycondensation resin, hexamethoxymethyl melamine resin (TMMM), methanol modified trimethylol melamine, urea-melamine formaldehyde resin, polyester melamine, 2-sec-butylphenyl-N-methyl amino acid ester, Dichloroisocyanurate, trichloroisocyanurate, aminotriazine resin, urethane acrylate, 4-aminopyridine resin, N-β-aminoethylaminopolyester resin, α-aminopyridine Resin, amino diphenyl ether resin, amino polysiloxane, amino phosphoric acid resin, maleopimaric acid polyester amino resin, piperazine aminodithioformic acid type chelating resin, hydroxyethyl amino polyester resin.

Free radical thermal curing agents include: dicumyl peroxide, epoxy monoacrylate, tert-butyl benzoate, polyurethane acrylate, polyurethane diol, polyester triol, bis(hexafluorophosphate), polymethyl Methyl Acrylate (PMMA), Styrene-Acrylate, Polybutadiene Hydroxyacrylate, Polyester Urethane Acrylate, Epoxy Monoacrylate, Butadiene-Methyl Methacrylate-Styrene Copolymer, butadiene-methyl methacrylate, ethylene-acrylate, polyacrylate, chlorinated polypropylene-acrylate, polymethyl methacrylate, polyethyl methacrylate, cyanoacrylate, 2 - 1,2-propylene glycol monoacrylate, methyl methacrylate, ethyl methacrylate, butyl methacrylate, hydroxyethyl methacrylate, isobutyl methacrylate, isobutyl methacrylate, Isooctyl methacrylate, 2-methylaminoethyl methacrylate, methyl acrylate, ethyl acrylate, butyl acrylate, 2-hydroxypropyl acrylate, hydroxyethyl acrylate, isooctyl acrylate, vinyl acetate-acrylic acid Butyl ester, polymethyl methacrylate.

UV curing-microwave curing system: The microwave curing agent in the microwave curing method is the same as the thermal curing agent in the thermal curing method. Its technical feature is to use microwave curing to cure the thermal curing agent. Due to the unique "intramolecular" uniform heating method of microwave, the resin is cured uniformly, fast, easy to control, energy saving, and less equipment investment. be valued.

UV curing-anaerobic curing system: the anaerobic curing agent in the anaerobic curing system includes: tetraethylene glycol dimethacrylate, polyethylene glycol dimethacrylate (such as Loctite 290 in the United States) And Loctite 271, Loctite 277 mixed with fumaric acid bisphenol A unsaturated polyester), triethylene glycol dimethacrylate, diethylene glycol dimethacrylate, hydroxyethyl methacrylate Or hydroxypropyl ester (such as domestic iron anchor 302, Japan's triple bond 1030), bisphenol A epoxy ester (such as domestic Y-150, GY-340, etc. are a mixture of epoxy ester and polyethylene glycol ester) , the reaction product of methacrylate hydroxyalkylphenol and polyol (such as American Loctite 372, domestic GY-168, iron anchor 352 and BN-601), polyurethane, polyurethane isocyanate, hydroxypropyl methacrylate ester, hydroxypropyl methacrylate-polyether, hydroxybutyl urethane, urethane-acrylate, hydroxypropyl acrylate (HPA), ethylene glycol dimethacrylate, cumyl hydroperoxide, acrylic ortho Cresol Novolac Epoxy Ester, Methoxylated Polyethylene Glycol Methacrylate, Triethylene Glycol Phthalate, β-Hydroxyethyl Methacrylate, Trimethylolpropane Trimethacrylate , triethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, thiodiethylene glycol dimethacrylate, bis(diethylene glycol acrylate), ethoxy Bisphenol A dimethacrylate, bisphenol A ethylene glycol dimethacrylate, ethylene glycol methacrylate, ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, a Diethylene glycol dimethacrylate, diethylene glycol dimethacrylate, epoxy resin (meth)acrylate, diethylene glycol dimethacrylate, trimethacrylate Ethylene glycol ester, urethane acrylate, methyl a-cyanoacrylate, ethyl a-cyanoacrylate, glycidyl methacrylate, polyethylene glycol dimethacrylate, triethylene glycol dimethyl Acrylate, dicyclopentadienyl-oxy-ethyl methacrylate, dimethylaminoethyl methacrylate.

UV curing-electron beam curing system: the electron beam curing agent in the electron beam curing method includes: triphenolyl methane glycidyl ether epoxy resin, dicyclopentadiene bisphenol epoxy resin, bisphenol A vinyl Ester resin (V-411), epoxy vinyl ester resin (V-901), epoxy acrylate resin (BRT2000), maleimide resin, 4,4'-diphenylmethane bismaleimide , bisphenol A-diphenyl ether bismaleimide, bisphenol A maleic acid vinyl resin, vinyl ester resin, brominated vinyl ester resin, fumaric acid mixed vinyl ester resin, Acrylic mixed vinyl ester resins, urethane mixed vinyl ester resins, rubber mixed vinyl ester resins, novolac epoxy vinyl ester resins, isocyanate mixed epoxy acrylates, toluene diisocyanate mixed hydroxyethyl acrylates, hydroxy Methylated bisphenol type epoxy resin, bisphenol A acrylate, polyurethane acrylate, bisphenol A epoxy vinyl ester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol Phenol A type epoxy acrylate resin, bisphenol A diglycidyl ether, bisphenol A epoxy chloroacrylate resin.

The following are specific embodiments of the present invention:

Example 1

In the substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual curing adhesive, the dual curing adhesive adopts a dual curing system of free radical ultraviolet curing agent-thermal curing agent, and the conductive layer 1 is an ITO film.

The preparation method is as follows:

①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the glass substrate, and dry it with dry nitrogen after cleaning;

② Stir the mixed solution of shellac-dual curing glue (dual curing glue accounted for 0.3% by mass) diluted 1:10 with ethanol for 20 hours, then spin-coat it on the surface of the glass substrate with a film thickness of about 100 microns;

Wherein the proportioning ratio of dual curing rubber raw material components is:

③UV curing treatment on the surface of the substrate for 30 seconds;

④Put the substrate into the oven at a temperature of 110°C and heat curing for 20 minutes; (steps ③ and ④ can be interchanged)

⑤Put the substrate into a vacuum chamber, and at room temperature, by means of DC magnetron sputtering, sputter a 100-nanometer-thick ITO transparent conductive film on the surface of the glass substrate under a power condition of 100 watts;

⑥UV curing the flexible substrate coated with conductive film for 30 seconds again;

⑦Peel off the flexible substrate from the glass substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 2

In the substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual-curing adhesive, the dual-curing adhesive adopts a dual-curing system of free radical ultraviolet curing agent-microwave curing agent, and the conductive layer 1 is carbon nanotubes.

The preparation method is as follows:

①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the glass substrate, and dry it with dry nitrogen after cleaning;

② Stir the mixed solution of shellac-dual curing glue (dual curing glue accounted for 0.4% by mass) diluted 1:10 with ethanol for 20 hours, then spin-coat it on the surface of the glass substrate with a film thickness of about 300 microns;

Wherein the proportioning ratio of dual curing rubber raw material components is:

③The substrate obtained in step ② is treated with ultraviolet light, and the treatment time is 30s;

④ Put the substrate into the microwave oven and microwave curing for 15 minutes; (steps ③ and ④ can be interchanged)

⑤ Prepare a conductive layer with carbon nanotube aqueous dispersion in ② surface spraying method, with a height of 20cm, a spraying pressure of 0.3MPa, a spraying rate of 0.3mL/min, and a thickness of the conductive layer of 77nm;

⑥UV curing the flexible substrate coated with conductive film for 30 seconds again;

⑦Peel off the flexible substrate from the glass substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 3

The substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual-curing adhesive, the dual-curing adhesive adopts a dual-curing system of free radical ultraviolet light curing agent-anaerobic curing agent, and the conductive layer 1 is silver nanowires .

The preparation method is as follows:

① Clean the glass substrate with a surface roughness less than 1nm first, then use detergent, acetone, deionized water, and isopropanol to perform ultrasonic cleaning, and then dry it with dry nitrogen after cleaning;

② Stir the mixed solution of shellac-dual curing glue (dual curing glue accounted for 0.5% by mass) diluted 1:10 with ethanol for 20 hours, then spin-coat it on the surface of the glass substrate, with a film thickness of about 500 microns;

Wherein the proportioning ratio of dual curing rubber raw material components is:

③UV curing the substrate obtained in step ② for 40 seconds;

④Put the substrate into the vacuum chamber, and perform anaerobic curing in a vacuum environment for 20 minutes;

⑤ On the surface of the flexible substrate obtained in step ④, use the spray method to prepare a conductive layer from the silver nanowire isopropanol dispersion, the height is 20cm, the spraying pressure is 0.3MPa, the spraying rate is 0.3mL/min, and the thickness of the conductive layer is 60nm;

⑥UV curing the flexible substrate coated with conductive film for 60 seconds again;

⑦Peel off the flexible substrate from the rigid substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 4

In the substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual-curing adhesive, the dual-curing adhesive adopts a free radical UV curing-electron beam curing system, and the conductive layer 1 is gold-copper alloy nanowires.

The preparation method is as follows:

① Clean the glass substrate with a surface roughness less than 1nm first, then use detergent, acetone, deionized water, and isopropanol to perform ultrasonic cleaning, and then dry it with dry nitrogen after cleaning;

2. on the glass substrate, adopt spin coating to prepare shellac and double-cured glue mixed film (the mass ratio of double-cured glue is 0.8%), and described double-cured glue raw material comprises following composition:

③UV curing the flexible substrate obtained in step ② for 60 seconds;

④ Put the substrate into the vacuum chamber, and carry out electron beam curing for 60 minutes in a vacuum environment;

⑤The surface spraying method prepares the conductive layer from the gold-copper alloy nanowire aqueous dispersion, the height is 20cm, the spraying pressure is 0.3MPa, the spraying rate is 0.3mL/min, and the thickness of the conductive layer is 50nm;

⑥UV curing the flexible substrate coated with conductive film for 60 seconds again;

⑦Peel off the flexible substrate from the glass substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 5

In the substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual-curing adhesive, the dual-curing adhesive adopts a cationic UV-curing-heat curing system, and the conductive layer 1 is ITO.

The preparation method is as follows:

① Clean the rigid substrate with a surface roughness less than 1nm first, then use detergent, acetone, deionized water, and isopropanol to perform ultrasonic cleaning, and dry it with dry nitrogen after cleaning;

2. adopt spin coating on rigid substrate to prepare shellac and double-cured glue mixed film (the mass ratio of double-cured glue is 2%), and described double-cured glue raw material comprises following composition:

③UV curing treatment on the surface of the substrate for 60 seconds;

④Put the substrate into the oven at a temperature of 110°C and heat curing for 20 minutes; (steps ③ and ④ can be interchanged)

⑤ Prepare an indium tin oxide conductive layer by screen printing on the surface of ④, and the thickness of the conductive layer is 80nm;

⑥UV curing the flexible substrate coated with conductive film for 60 seconds again;

⑦Peel off the flexible substrate from the rigid substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 6

The substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual curing adhesive, the dual curing adhesive adopts a cationic UV curing agent-microwave curing agent dual curing system, and the conductive layer 1 is poly(3,4- Ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS).

The preparation method is as follows:

① Clean the rigid substrate with a surface roughness less than 1nm first, then use detergent, acetone, deionized water, and isopropanol to perform ultrasonic cleaning, and dry it with dry nitrogen after cleaning;

2. on the rigid substrate, adopt spin coating to prepare shellac and double-cured glue mixed film (the mass ratio of double-cured glue is 2.5%), and described double-cured glue raw material comprises following composition:

③UV curing treatment on the surface of the substrate for 60 seconds;

④ Put the substrate into the microwave oven and microwave curing for 15 minutes; (steps ③ and ④ can be interchanged)

⑤ Prepare PEDOT:PSS conductive layer in ③ surface inkjet printing method, the thickness of the conductive layer is 40nm;

⑥Irradiate the surface of the flexible substrate with ultraviolet light for 60 seconds;

⑦Peel off the flexible substrate after the ultraviolet light treatment in step ⑥ from the rigid substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 7

The substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual curing adhesive, the dual curing adhesive adopts a cationic UV curing agent-anaerobic curing agent dual curing system, and the conductive layer 1 is a nickel-iron heterojunction Nanowires.

The preparation method is as follows:

① Clean the rigid substrate with a surface roughness less than 1nm first, then use detergent, acetone, deionized water, and isopropanol to perform ultrasonic cleaning, and dry it with dry nitrogen after cleaning;

2. on the rigid substrate, adopt spin coating to prepare shellac and double-cured glue mixed film (the mass ratio of double-cured glue is 3%), and described double-cured glue raw material comprises following composition:

③UV curing treatment on the surface of the substrate for 60 seconds;

④Put the substrate into the vacuum chamber, and perform anaerobic curing in a vacuum environment for 20 minutes;

⑤ Prepare the conductive layer of nickel-iron heterojunction nanowires by inkjet printing on the surface, and the thickness of the conductive layer is 70nm;

⑥Irradiate the surface of the flexible substrate coated with conductive film with ultraviolet light for 60 seconds;

⑦Peel off the flexible substrate after the ultraviolet light treatment in step ⑥ from the rigid substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Example 8

In the substrate structure shown in Figure 1, the flexible substrate 2 is shellac mixed with dual-curing adhesive, the dual-curing adhesive adopts a cationic UV-curing-electron beam curing system, and the conductive layer 1 is gold-copper alloy nanowires.

The preparation method is as follows:

① Clean the glass substrate with a surface roughness less than 1nm first, then use detergent, acetone, deionized water, and isopropanol to perform ultrasonic cleaning, and then dry it with dry nitrogen after cleaning;

2. on the glass substrate, adopt spin coating to prepare shellac and double-cured glue mixed film (the mass ratio of double-cured glue is 4%), and described double-cured glue raw material comprises following composition:

③UV curing the flexible substrate obtained in step ② for 60 seconds;

④ Put the substrate into the vacuum chamber, and carry out electron beam curing for 60 minutes in a vacuum environment;

⑤The surface spraying method prepares the conductive layer from the gold-copper alloy nanowire aqueous dispersion, the height is 20cm, the spraying pressure is 0.3MPa, the spraying rate is 0.3mL/min, and the thickness of the conductive layer is 50nm;

⑥UV curing the flexible substrate coated with conductive film for 60 seconds again;

⑦Peel off the flexible substrate from the glass substrate to form a substrate for flexible optoelectronic devices;

⑧Test the degradation characteristics, square resistance, surface morphology, water and oxygen transmittance and light transmittance of substrates for flexible optoelectronic devices.

Table 1 shows the light transmittance test results of the flexible substrates of Examples 1-8, one is shellac mixed with a certain amount of dual-curing glue, and the other is shellac not mixed with double-curing glue.

Example Light transmittance after doping with dual curing adhesive Light transmittance without dual-cure adhesive 1 81% 68% 2 78% 69% 3 81% 68% 4 82% 67% 5 76% 71% 6 77% 72% 7 71% 68% 8 77% 67%

Claims (10)

1. biodegradable base board for flexible optoelectronic part, comprise flexible substrate and conductive layer, conductive layer is positioned at the top of flexible substrate, it is characterized in that, described flexible substrate is the shellac being mixed with dual cure glue, the mass ratio of described dual cure glue in shellac is 0.3-4%, described dual cure glue is made up of dual UV curable paint, described dual UV curable paint is ultraviolet light polymerization-heat cured system, ultraviolet light polymerization-microwave curing system, one or more in ultraviolet light polymerization-anaerobic curing system or ultraviolet light polymerization-electronic beam curing system, described dual UV curable paint by two independently cure stage complete, one of them cure stage is reacted by ultraviolet light polymerization, another cure stage is dark reaction.

2. biodegradable base board for flexible optoelectronic part according to claim 1, is characterized in that, described dual UV curable paint is following system:

1. free radical type ultraviolet light polymerization-heat cured system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing;

2. free radical type ultraviolet light polymerization-microwave curing system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, then carries out microwave curing, then carries out ultraviolet light polymerization; Or first carry out microwave curing, then carry out ultraviolet light polymerization, then heat or microwave curing;

3. free radical type ultraviolet light polymerization-anaerobic curing system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, is not then subject to illumination and substrate under being in anoxia condition can carry out anaerobic curing reaction automatically, then carries out ultraviolet light polymerization;

4. free radical type ultraviolet light polymerization-electronic beam curing system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, then carries out electronic beam curing under vacuo, then carries out ultraviolet light polymerization;

5. cation type ultraviolet photo-curing-heat cured system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing;

6. cation type ultraviolet photo-curing-microwave curing system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, then carries out microwave curing, then carries out ultraviolet light polymerization; Or first carry out microwave curing, then carry out ultraviolet light polymerization, then heat or microwave curing;

7. cation type ultraviolet photo-curing-anaerobic curing system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, is not then subject to illumination and substrate under being in anoxia condition can carry out anaerobic curing reaction automatically, then carries out ultraviolet light polymerization;

Or 8. cation type ultraviolet photo-curing-electronic beam curing system, weight forms:

Solidification process is: first carry out ultraviolet light polymerization, then carries out electronic beam curing under vacuo, then carries out ultraviolet light polymerization.

3. biodegradable base board for flexible optoelectronic part according to claim 2, is characterized in that, described free radical thermal curing agents is ethylenediamine, hexamethylene diamine, triethylene tetramine, ethoxy diethylenetriamine, hydroxyl isopropyl diethylenetriamine, poly-ethanedioic acid adipamide, diformazan ammonia propylamine, 4-methyl-diaminopropane, dicyandiamide, two amido diphenyl sulfones, two aminodiphenylmethane, m-phenylene diamine (MPD), diethyl toluene diamine, N-(aminopropyl)-toluenediamine, dimethylethanolamine, dimethyl Bian amine, triethylbenzyl ammonium chloride, benzyl-dimethylamine, N-benzyl dimethylamine, 2,4,6 ,-three-(dimethylamino methyl)-phenol, phenol formaldehyde (PF) hexamethylene diamine, N, N-dimethyl benzylamine, 2-ethyl imidazol(e), 2-phenylimidazole, glyoxal ethyline, 2-ethyl imidazol(e), 2-ethyl-4-methylimidazole, 1-(2-amino-ethyl)-glyoxal ethyline, maleic anhydride, oxydiphthalic, phthalic anhydride, trimellitic anhydride, tetrabromo-benzene dicarboxylic acid anhydride, gather acetic anhydride in the ninth of the ten Heavenly Stems, sebacic dihydrazide, adipic dihydrazide, carbon acid dihydrazide, grass acid dihydrazide, succinic acid hydrazide ii, adipic dihydrazide, the amino polyacrylamide of N-, decanedioic acid hydrazides, M-phthalic acid hydrazides, to Para Hydroxy Benzoic Acid hydrazides, azelaic acid two hydrazides, isophthalic dihydrazide, ferrocene tetrafluoroborate, triallyl cyanurate, toluene di-isocyanate(TDI), '-diphenylmethane diisocyanate, hexamethylene diisocyanate, trimethyl hexamethylene diisocyanate, dicyclohexyl methyl hydride diisocyanate, XDI, tetramethylxylylene diisocyanate, methyl styrene isocyanates, hexahydrotoluene vulcabond, triphenyl first-4,4', 4'-triisocyanate, diaminodiphenyl-methane, N-is to chlorophenyl-N-N-dimethyl urea, 3-phenyl-1,1-dimethyl urea, 3-rubigan-1,1-dimethyl urea, 4,4 '-diamino-diphenyl bis-phenol, polyurethanes, Lauxite, epoxy-ethylenediamine carbamate, 2,4,6-tri-(dimethylamino methyl) phenol, 2,4-diaminotoluene, polyurethane, methyl-etherified Lauxite, three (3-aminopropyl) amine, 2-amino-ethyl-two (3-aminopropyl) amine, 4,4 '-MDA, 4,4 '-diamino-diphenyl bis-phenol, 4,4 '-diamino-diphenyl sulfone, three (3-aminopropyl) amine, melmac, benzoguanamine resin, hexamethylol melamine resin, hexamethoxymethyl melamine resin, urea-melamine resin, polyester melamine, TCCA ester, aminotriazine resins, urethane acrylate, 4-aminopyridine resin, N-β-aminoethyl amino mylar, α-aminopyridine resin, aminodiphenylether resin, phosphoramidic-resin, hydroxyethylamino mylar, described microwave curing agent and thermal curing agents use same material or different materials, described anaerobic curing agent comprises: methacrylate tetraethylene-glycol ester, methacrylate multicondensed ethylene glycol ester, triethylene Glycol double methyl methacrylate, ethyleneglycol dimethyacrylate, hydroxyethyl methacrylate or hydroxypropyl acrylate, methoxylated polyethylene glycol methacrylate, phthalic acid Triethylene Glycol, β-hydroxyethyl methacry-late, triethylene Glycol double methyl methacrylate, Dimethacryloylethylthioether, phthalic acid two (diethylene glycol (DEG) acrylate), Ethoxylated bisphenol A dimethylacrylate, dimethacrylate bisphenol-A ethylene glycol fat, second diester methacrylate, triethylene-glycol dimethylacrylate, triethlene glycol bismethylacrylate, glycol methacrylate, one diethyl acetal double methyl methacrylate, epoxy resin methacrylate, methacrylate diglycol ester, described electronic beam curing agent comprises: triphenol methylmethane tetraglycidel ether epoxy resin, bicyclopentadiene bisphenol-type epoxy resin, bisphenol A-type vinyl ester resin, epoxy vinyl ester resin, Epocryl, maleimide resin, 4, 4 '-diphenyl methane dimaleimide, bisphenol-A-Diphenyl Ether Bismaleimide, bisphenol-A maleic acid vinylite, ethylene bromide base ester resin, phenol formaldehyde epoxy vinyl ester resin, methylolation bisphenol A type epoxy resin, bisphenol A acrylates, urethane acrylate, bisphenol-A epoxide vinylester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol-a epoxy acrylate resin, one or more in bisphenol A diglycidyl ether or bisphenol-A epoxy chloropropene acid ester resin,

Light trigger is styrax or Benzoin derivative, and described Benzoin derivative is benzoin methyl ether, benzoin ethyl ether, acetophenone derivative or benzoin isopropyl ether; Cation light initiator is one or more in aromatic sulfonium salts, salt compounded of iodine or luxuriant molysite; Sensitising agent be benzophenone, thia anthraquinone or Michler's keton one or more; Auxiliary agent comprises plasticizer, thixotropic agent and filler;

Plasticizer is dioctyl phthalate, dibutyl phthalate, three vinyl butyl ether base phosphates, polyvinyl butyral resin, tributyl 2-acetylcitrate, repefral, diethyl phthalate, hexanedioic acid two (Butoxyethoxy) ethyl ester, isopropyl titanate, tetrabutyl titanate, citrate, trimellitic acid (2-ethyl) own ester, phthalic acid two (2-ethyl) own ester, decanedioic acid two (2-ethyl) own ester, Diethylene Glycol Dibenzoate, phthalic anhydride, dipropylene glycol dibenzoate and chlorosulfonated polyethylene, described coupling agent comprises methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, one or more in γ mercaptopropyitrimethoxy silane or γ-Mercaptopropyltriethoxysilane.

4. biodegradable base board for flexible optoelectronic part according to claim 1, it is characterized in that, the material of described conductive layer is one or more in Graphene, carbon nano-tube, metal simple-substance nano wire, metal alloy nanowires, metal hetero-junction nano wire, zinc oxide, titanium oxide, tin indium oxide or polymer electrode material.

5. biodegradable base board for flexible optoelectronic part according to claim 4, it is characterized in that, one or more in described metal simple-substance nano wire or Fe nanowire, copper nano-wire, nano silver wire, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nanowires or Pt nanowires.

6. biodegradable base board for flexible optoelectronic part according to claim 4, is characterized in that, described metal alloy nanowires is copper-iron alloy nano wire, silver ferroalloy nano wire, bule gold nano wire, alfer nano wire, dilval nano wire, ferro-cobalt nano wire, manganeisen nano wire, cadmium ferroalloy nano wire, indium ferroalloy nano wire, tin ferroalloy nano wire, ferro-tungsten nano wire, pt-fe alloy nano wire, yellow gold nano wire, gold copper nano wire, aluminium copper nano wire, monel nano wire, cobalt-copper alloy nano wire, manganin nano wire, cadmium copper alloy nano wire, gun-metal nano wire, tungsten-copper alloy nano wire, Mock gold nano wire, electrum nano wire, aluminium silver alloy nanowires, bazar metal nano wire, cobalt silver alloy nanowires, manganese silver alloy nanowires, cadmium silver nano wire, indium silver alloy nanowires, sn-ag alloy nano wire, tungsten silver alloy nanowires, platinum-silver alloys nano wire, aluminium gold alloy nano-wire, nickel billon nano wire, cobalt billon nano wire, manganese billon nano wire, cadmium billon nano wire, indium billon nano wire, Sillim's alloy nano-wire, tungsten billon nano wire, cobalt-nickel alloy nano wire, manganese-nickel nano wire, cadmium-nickel alloy nano wire, indium nickel alloy nano wire, tin-nickel alloy nano wire, tungsten nickel nano wire, platinum-nickel alloy nano wire, cadmium manganese alloy nano wire, indium manganese alloy nano wire, tin manganese alloy nano wire, tungsten manganese alloy nano wire, platinum manganese alloy nano wire, indium cadmium alloy nano wire, tin cadmium alloy nano wire, tungsten cadmium alloy nano wire, platinum cadmium alloy nano wire, tin-indium alloy nano wire, tungsten indium alloy nano wire, platinum indium alloy nano wire, tungsten ashbury metal nano wire, one or more in platinum ashbury metal nano wire or platinum-tungsten alloys nano wire.

7. biodegradable base board for flexible optoelectronic part according to claim 4, is characterized in that, described metal hetero-junction nano wire is copper iron heterojunction nano-wire, silver iron heterojunction nano-wire, gold iron heterojunction nano-wire, ferro-aluminum heterojunction nano-wire, ferronickel heterojunction nano-wire, ferro-cobalt heterojunction nano-wire, ferromanganese heterojunction nano-wire, cadmium iron heterojunction nano-wire, indium iron heterojunction nano-wire, tin iron heterojunction nano-wire, ferrotungsten heterojunction nano-wire, platinum iron heterojunction nano-wire, silver-bearing copper heterojunction nano-wire, gold copper heterojunction nano-wire, aluminum copper dissimilar junction nanowire, ambrose alloy heterojunction nano-wire, cobalt copper heterojunction nano-wire, copper-manganese heterojunction nano-wire, cadmium copper heterojunction nano-wire, tin copper heterojunction nano-wire, tungsten copper heterojunction nano-wire, platinoid heterojunction nano-wire, gold and silver heterojunction nano-wire, aluminium silver heterojunction nano-wire, nickeline heterojunction nano-wire, cobalt silver heterojunction nano-wire, manganese silver heterojunction nano-wire, cadmium silver heterojunction nano-wire, indium silver heterojunction nano-wire, tin silver heterojunction nano-wire, tungsten silver heterojunction nano-wire, platinum silver heterojunction nano-wire, aluminium gold heterojunction nano-wire, nickel gold heterojunction nano-wire, cobalt gold heterojunction nano-wire, manganese gold heterojunction nano-wire, cadmium gold heterojunction nano-wire, indium gold heterojunction nano-wire, Sillim's heterojunction nano-wire, tungsten gold heterojunction nano-wire, cobalt nickel heterojunction nano-wire, manganese nickel heterojunction nano-wire, cadmium nickel heterojunction nano-wire, indium nickel heterojunction nano-wire, tin nickel heterojunction nano-wire, tungsten nickel heterojunction nano-wire, platinum nickel heterojunction nano-wire, cadmium manganese heterojunction nano-wire, indium manganese heterojunction nano-wire, tin manganese heterojunction nano-wire, tungsten manganese heterojunction nano-wire, platinum manganese heterojunction nano-wire, indium cadmium heterojunction nano-wire, tin cadmium heterojunction nano-wire, tungsten cadmium heterojunction nano-wire, platinum cadmium heterojunction nano-wire, tin indium heterojunction nano-wire, tungsten indium heterojunction nano-wire, platinum indium heterojunction nano-wire, tungsten tin heterojunction nano-wire, one or more in platinum tin heterojunction nano-wire or platinum tungsten heterojunction nano-wire.

8. biodegradable base board for flexible optoelectronic part according to claim 4, it is characterized in that, described polymer electrode material is poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) or 3,4-polyethylene dioxythiophenes.

9., according to the manufacture method of the arbitrary described biodegradable base board for flexible optoelectronic part of claim 1-8, it is characterized in that, comprise the following steps:

1. the rigid substrates that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with drying nitrogen;

2. roller coat, LB embrane method, blade coating, spin coating, a painting, spraying, czochralski method, the tape casting, dip-coating, inkjet printing, self assembly or silk screen printing is adopted to prepare flexible substrate on the rigid substrate, described flexible substrate is shellac, the dual cure glue that mass ratio is 0.3-4% is mixed with in described shellac, described dual cure glue is made up of dual UV curable paint, and described dual UV curable paint is one or more of ultraviolet light polymerization-heat cured system, ultraviolet light polymerization-microwave curing system, ultraviolet light polymerization-anaerobic curing system and ultraviolet light polymerization-electronic beam curing system.

3. treatment with ultraviolet light is carried out to the flexible substrate that 2. step obtains, carry out photocuring;

4. flexible substrate is put into heating furnace to carry out hot curing or put into microwave oven carrying out microwave curing;

Wherein, 3. and 4. step can exchange, and namely first carries out being heating and curing or microwave curing, then carries out ultraviolet light polymerization;

5. roller coat, LB embrane method, a painting, spraying, czochralski method, inkjet printing or silk screen print method is adopted to prepare conductive layer on flexible substrate surface;

6. again treatment with ultraviolet light is carried out to the flexible substrate that 5. step obtains, carry out photocuring;

7. flexible substrate is peeled off from rigid substrates, form base board for flexible optoelectronic part.

10., according to the manufacture method of the arbitrary described biodegradable base board for flexible optoelectronic part of claim 1-8, it is characterized in that, comprise the following steps:

1. the rigid substrates that surface roughness is less than 1nm cleans, and dries up after cleaning with drying nitrogen;

2. roller coat, LB embrane method, blade coating, spin coating, a painting, spraying, czochralski method, the tape casting, dip-coating, inkjet printing, self assembly or silk screen printing is adopted to prepare flexible substrate on the rigid substrate, described flexible substrate is shellac, the dual cure glue that mass ratio is 0.3-4% is mixed with in described shellac, described dual cure glue is made up of dual UV curable paint, and described dual UV curable paint is one or more of ultraviolet light polymerization-heat cured system, ultraviolet light polymerization-microwave curing system, ultraviolet light polymerization-anaerobic curing system and ultraviolet light polymerization-electronic beam curing system.

3. treatment with ultraviolet light is carried out to the flexible substrate that 2. step obtains, carry out photocuring;

4. flexible substrate is placed under vacuum conditions, carry out anaerobic curing or electronic beam curing process;

5. roller coat, LB embrane method, a painting, spraying, czochralski method, inkjet printing or silk screen print method is adopted to prepare conductive layer on flexible substrate surface;

6. again treatment with ultraviolet light is carried out to the flexible substrate that 5. step obtains, carry out photocuring;

7. flexible substrate is peeled off from rigid substrates, form base board for flexible optoelectronic part.