CN104746043B - Reaction chamber and plasma processing device - Google Patents
Reaction chamber and plasma processing device Download PDFInfo
- Publication number
- CN104746043B CN104746043B CN201310750911.1A CN201310750911A CN104746043B CN 104746043 B CN104746043 B CN 104746043B CN 201310750911 A CN201310750911 A CN 201310750911A CN 104746043 B CN104746043 B CN 104746043B
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- ring
- faraday shield
- dead ring
- blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 139
- 230000000903 blocking effect Effects 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 13
- 229910021645 metal ion Inorganic materials 0.000 claims description 21
- 230000006698 induction Effects 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005336 cracking Methods 0.000 abstract description 11
- 239000007769 metal material Substances 0.000 abstract description 9
- 238000002385 metal-ion deposition Methods 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of reaction chamber and plasma processing device, reaction chamber includes being nested with the Faraday shield in the inside sidewalls of reaction chamber, dead ring and blocks ring using what non-magnetic metal material was made, Faraday shield is stacked on dead ring, at least one cracked along being provided at circumferentially spaced for Faraday shield, and the vertical direction setting cracked along Faraday shield, block the inner side that ring is looped around Faraday shield and dead ring junction, and be not in contact with Faraday shield, and be grounded；Ring is blocked for blocking the metal ion deposition in reaction chamber in the junction with dead ring of cracking.The reaction chamber that the present invention is provided, it can improve the stability of reaction chamber chamber processes, so as to improve processing quality.
Description
Technical field
The invention belongs to semiconductor applications, and in particular to a kind of reaction chamber and plasma processing device.
Background technology
Plasma processing device is to apply more extensive process equipment, is mainly used in the workpiece to be machined to substrate etc.
Carry out the techniques such as plated film, etching.In the production of the semiconductor devices of super large-scale integration, it usually needs to being processed work
Deposited metal layer in the big passage of depth-to-width ratio, groove or through hole on part surface, also, reaction chamber chamber piasma intermediate ion
Concentration is to influence one of principal element of deep hole deposition capability.
Fig. 1 is the structural representation of existing reaction chamber.Fig. 2 is the partial enlarged drawing in I regions in Fig. 1.Refer to Fig. 1
And Fig. 2, to improve plasma intermediate ion concentration in reaction chamber 10, generally it surround setting in the side-wall outer side of reaction chamber 10
There is an induction coil 11, and induction coil 11 is electrically connected with the radio-frequency power supply 12 that is arranged on outside reaction chamber 10 by adaptation 13
Connect, to produce alternating magnetic field in reaction chamber 10, swash process gas in reaction chamber 10 by the energy of alternating magnetic field
Hair form plasma so that in intensified response chamber 10 plasma ion concentration.But, find in actual applications：
On workpiece to be machined S while deposited metal film, often on the chamber inner wall of reaction chamber 10 also can deposited metal formed
Metallic film, because the metallic film formed on chamber inner wall is equipped with the gold of closure equivalent to the inside sidewalls in reaction chamber
Belong to ring, this alternating magnetic field that induction coil 11 can be caused to produce produces induced-current in the becket, so as to cause to sense
The alternating magnetic field that coil 11 is produced is shielded outside reaction chamber 10.Therefore, being provided with reaction chamber 10 using not magnetic conduction material
Expect the Faraday shield 14 being made, as shown in figure 3, being the structural representation of Faraday shield, Faraday shield 14 is adopted
With cyclic structure, and vertically it is provided with Faraday shield 14 and cracks 15, Faraday shield 14 is nested with anti-
Answer the inside sidewalls of chamber 10.It is readily appreciated that, 15 is cracked by being vertically provided with Faraday shield 14, can be with
So that conductive path is not present in the circumference of Faraday shield 14, so as to avoid the alternation magnetic that induction coil 11 is produced
Field produces induced-current on the conductive path.
In actual applications, specifically, the internal perisporium around reaction chamber 10 is provided with liner 16, and liner is located at reaction chamber
The bottom of room 10, liner 1 is generally made of metal material, and ground connection；It is provided with the upper surface of liner 16 using quartz
Or the dead ring 17 that the insulating materials such as ceramics is made, Faraday shield 14 is stacked on the upper surface of dead ring 17.
However, being inevitably present problems with actual applications using above-mentioned reaction chamber 10, i.e.,：In technique mistake
Cheng Zhong, often in 15 and the upper surface junction deposited metal film of dead ring 17 of cracking, this can cause Faraday shield 14
Crack and 15 be connected with the junction of dead ring 17 with Faraday shield 14, so as to form conductive path, induction coil 11
Induced-current can be produced in the conductive path, so as to cause to produce the technique in reaction chamber influence, and then influence reaction
The stability of chamber chamber processes.
The content of the invention
Present invention seek to address that technical problem present in prior art adds there is provided a kind of reaction chamber and plasma
Construction equipment, it can be not only avoided in the junction deposited metal film with dead ring that cracks；And can will block ring
The induced-current of sensing is discharged by earth terminal in the metallic film deposited on internal perisporium, so as to improve in reaction chamber
The stability of technique, and then processing quality can be improved.
The present invention provides a kind of reaction chamber, including is nested with the Faraday shield in the inside sidewalls of the reaction chamber
And dead ring, the Faraday shield is stacked on the dead ring, along being provided at circumferentially spaced for the Faraday shield
There is at least one to crack, and the vertical direction setting cracked along the Faraday shield, in addition to using non-magnetic
What metal material was made block ring, the ring that blocks is looped around the interior of the Faraday shield and the dead ring junction
Side, and be not in contact with the Faraday shield, and be grounded；The ring that blocks is used to block the metal in the reaction chamber
Ion deposition is in the junction cracked with the dead ring.
Wherein, the upper end for blocking ring is higher than the lower end of the Faraday shield, and the lower end for blocking ring is low
Between the lower end of the Faraday shield, and the periphery wall for blocking ring and the Faraday shield adjacent thereto
Level interval diametrically is less than the mean free path of metal ion in the reaction chamber.
Wherein, the annular protrusion extended towards the Faraday shield, and institute are formed with the upper end for blocking ring
State annular protrusion and the Faraday shield separately；And the close Faraday shield for stating annular protrusion
Level interval between one end and the Faraday shield adjacent thereto diametrically is less than the reaction chamber indoor metal
The mean free path of ion.
Wherein, the lower end for blocking ring extends to the lower end of the dead ring straight down, and towards close to described exhausted
The direction of edge ring extends to the bottom of the dead ring.
Wherein, at least one gap is provided with the side wall for blocking ring, and each gap is blocked described
Length in the circumference of ring is less than the mean free path of the metal ion in the reaction chamber.
Wherein, in addition to induction coil and the radio-frequency power supply that is electrically connected, the induction coil is nested with the reaction
The side-wall outer side of chamber, to excite to form plasma by the process gas in reaction chamber when the radio-frequency power supply is opened
Body.
Wherein, in addition to liner, the inner bushing ring is set around the internal perisporium of the reaction chamber, and the liner is located at described
The bottom of reaction chamber；The dead ring is stacked in the interior lining.
Wherein, the reaction chamber also includes bogey, and the bogey is located at the reaction chamber bottom, is used to
Carry workpiece to be machined.
Wherein, in addition to target and dc source, the target is arranged on the top of the reaction chamber, the direct current
Source is arranged on outside the reaction chamber, and is electrically connected with the target, to excite the process gas in the reaction chamber
Form plasma.
The present invention also provides a kind of plasma processing device, including reaction chamber, and the reaction chamber is using the present invention
The above-mentioned reaction chamber provided.
The present invention has following beneficial effects：
The reaction chamber that the present invention is provided, it is by being looped around adopting for Faraday shield and the inner side of dead ring junction
Ring is blocked with what non-magnetic metal material was made, it is not in contact with Faraday shield, and is grounded, reaction is blocked to realize
Metal ion deposition in chamber can be not only avoided in the junction with dead ring of cracking in the junction with dead ring of cracking
Deposited metal film, thus the metallic film can be avoided to be connected with Faraday shield and form conductive path；Moreover, by
In blocking ring ground connection, this causes the induced-current sensed in the metallic film that will be deposited on the internal perisporium for block ring to pass through ground connection
End is discharged, thus influence will not be produced on the technique in reaction chamber, so as to improve the stabilization of reaction chamber chamber processes
Property, and then processing quality can be improved.
The plasma processing device that the present invention is provided, its reaction chamber provided by using the present invention can be improved
The stability of reaction chamber chamber processes, so as to improve the stability of plasma processing device, and then can improve technique
Quality.
Brief description of the drawings
Fig. 1 is the top view of existing reaction chamber；
Fig. 2 is the partial enlarged drawing in I regions in Fig. 1；
Fig. 3 is the structural representation of Faraday shield；
The structural representation for the reaction chamber that Fig. 4 provides for first embodiment of the invention；
Fig. 5 is Faraday shield, dead ring and to block the structural representation of ring in Fig. 4；
The structural representation for the reaction chamber that Fig. 6 provides for second embodiment of the invention；
Fig. 7 is Faraday shield, dead ring and to block the structural representation of ring in Fig. 6；
Fig. 8 is to block the stereogram of ring in Fig. 6；And
Fig. 9 is the side view for blocking ring.
Embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
The reaction chamber and plasma processing device of confession are described in detail.
The structural representation for the reaction chamber that Fig. 4 provides for first embodiment of the invention.Fig. 5 is Faraday shield in Fig. 4
Part, dead ring and the structural representation for blocking ring.Also referring to Fig. 4 and Fig. 5, the reaction chamber 20 that the present embodiment is provided includes
It is nested with the Faraday shield 21 in the inside sidewalls of reaction chamber 20, dead ring 22, is made of non-magnetic metal material
Block ring 23, induction coil 24 and the radio-frequency power supply 25 being electrically connected.Wherein, Faraday shield 21 is stacked in dead ring
On 22, at least one crack, and cracked along the perpendicular of Faraday shield 21 along being provided at circumferentially spaced for Faraday shield 21
Nogata is made to setting, Faraday shield 21 of non-magnet_conductible material, and dead ring 22 is using quartz or ceramics etc.
Electrically non-conductive material is made；Blocking the material of ring 23 includes aluminium, and it is looped around Faraday shield 21 and the junction of dead ring 22
Inner side, and be isolated with Faraday shield 21, i.e. the two is not in contact, and is grounded, and blocking ring 23 is used to block reaction chamber
Metal ion deposition in 20 is in the junction with dead ring 22 of cracking（Such as position A in Fig. 5）, wherein, non-magnetic metal material
Material, which includes aluminium, can not only avoid in the junction deposited metal film with dead ring 22 that cracks, thus can avoid the metal foil
Film is connected with Faraday shield 21 and forms conductive path；It is additionally, since and blocks ring 23 and be grounded, this make it that ring will be being blocked
The induced-current of sensing is discharged by earth terminal in the metallic film deposited on 23 internal perisporium, thus will not be to reaction chamber
Interior technique produces influence, so as to improve the stability of reaction chamber chamber processes, and then can improve processing quality.
Specifically, in the present embodiment, as shown in figure 5, the upper end for blocking ring 23 is higher than the lower end of Faraday shield 21,
And lower end of the lower end less than Faraday shield 21 of ring 23 is blocked, and block the periphery wall and farad adjacent thereto of ring 23
Level interval d between the shielding 21 diametrically is less than the mean free path of metal ion in reaction chamber 20, and this can be to prevent
Only the metal ion in reaction chamber 20 via the level interval D-shaped into gap deposition in the connection with dead ring 22 of cracking
Place, metal ion deposition in reaction chamber 20 is blocked in the junction with dead ring 22 of cracking so as to realize.In reality
In, level interval d can also be controlled to the mean free path magnitude of the metal ion in less than reaction chamber, this can be
The metal ion deposition in reaction chamber 20 is blocked to a certain extent in the junction with dead ring 22 of cracking.
Induction coil 24 is nested with the side-wall outer side in reaction chamber 20, and induction coil 24 is electrically connected with radio-frequency power supply 25, uses
To excite to form plasma by the process gas in reaction chamber 20 when radio-frequency power supply 25 is opened, so that intensified response chamber
The ion concentration of plasma in 20, the frequency range of radio-frequency power supply 25 is in 0.1M~60MHz, it is preferable that radio-frequency power supply 25
Frequency be 2MHz.
It is readily appreciated that, in the present embodiment, is made due to blocking ring 23 of metal material, and ground connection so that block ring
Capacitive coupling is produced between 23 and Faraday shield 21, this can cause 24 pairs of induction coil to block the RF energy that ring 23 is coupled
Bled off from earth terminal, so that causing the coupling efficiency of induction coil 24 reduces.Therefore, being blocked in actual applications, it is necessary to reduce
The capacitor value Xc that is produced between ring 23 and Faraday shield 21 reduces the loss of the coupling efficiency to induction coil 24.
Determine how to realize that the capacitor value Xc produced between ring 23 and Faraday shield 21 is blocked in reduction in detail below.Tool
Body, as shown in figure 5, the level interval between blocking the periphery wall and Faraday shield 21 adjacent thereto of ring 23 diametrically
D is less than the mean free path of metal ion in reaction chamber 20；The upper end of ring 23 is blocked with the lower end of Faraday shield 21 to exist
There is preset vertical spacing h in vertical direction, it is preferable that preset vertical spacing h value is 10mm；According to following capacitance
Formula（1）With the formula of capacitor value（2）；
Capacitance：
Capacitor value：
Wherein, σ is dielectric constant；S is proportional with h to block ring 23 and the relative area of Faraday shield 21；d
Level interval between periphery wall and Faraday shield 21 adjacent thereto to block ring 23 diametrically, f is and sensing
The working frequency for the radio-frequency power supply 25 that coil 24 is electrically connected.
Therefore, to reduce the capacitor value Xc for blocking and being produced between ring 23 and Faraday shield 21, can ensure not right
On the premise of technique in reaction chamber 20 produces influence, increase level interval d and/or reduction relative area S, in the present embodiment
In, because level interval d needs to be set smaller than the mean free path of metal ion in reaction chamber 20, therefore, in this implementation
In example, reduction capacitor value Xc can be realized by reducing relative area S, specifically, is provided with the side wall for blocking ring 23
At least one gap, and length of each gap in the circumference for blocking ring 23 is less than the flat of the metal ion in reaction chamber 20
Equal free path, this can be avoided the metal ion in reaction chamber 20 from entering by the gap and block ring 23 and Faraday shield
Between 21, to avoid in the junction deposited metal film with dead ring 22 that cracks.
In addition, in the present embodiment, as shown in figure 4, reaction chamber 20 also include liner 26, bogey 27, target 28,
Magnetron 29, vacuum pumping system 30, electromagnetic control device 31 and subring 32.Wherein, liner 26 is around reaction chamber 20
Internal perisporium is set, and liner 26 is located at the bottom of reaction chamber 20, and dead ring 22 is stacked on liner 26, also, liner 26 with it is anti-
Answer the internal perisporium of chamber 20 to connect, and be grounded, the lower end for blocking ring 23 is in contact with liner 26, this can realize that blocking ring 23 leads to
Cross liner 26 to be grounded, liner 26 is made of metal material.
Bogey 27 is arranged on the bottom of reaction chamber 20, and for carrying workpiece to be machined S, and bogey 27 is with setting
Put the grid bias power supply 33 outside reaction chamber 20 to electrically connect by adaptation 34, to inhale to the offer back bias voltage of bogey 27
Draw the metal ion vertical incidence workpiece to be machined S in reaction chamber 20, so as to realize the through hole or groove deeper to depth
Deposited metal film, the frequency of grid bias power supply 33 typically selects 13.53MHz.
Target 28 is made of metal material, and reaction chamber also includes dc source, and target 28 is arranged on reaction chamber 20
Top, dc source is arranged on outside reaction chamber 20, and is electrically connected with target 28, to the work in provocative reaction chamber 20
Skill gas formation plasma, and dc source 35 provides back bias voltage to target 28 so that cation in plasma by
The surface of the attraction bombardment target 28 of back bias voltage, escapes the metallic atom on the surface of target 28 and is deposited on workpiece to be machined S's
On upper surface, so as to form metallic film on workpiece to be machined S upper surfaces；Magnetron 29 is arranged on the top of reaction chamber 20
Top, and rotate in the horizontal direction, to realize that plasma is evenly distributed in reaction chamber 20, to ensure in plasma
Positive ion bombardment target 28 uniformity.
Vacuum pumping system 30 is used to keep vacuum environment in reaction chamber 20, to ensure the stability of technique；Electromagnetism is adjusted
Regulating device 31 is arranged on the outside of induction coil 25, the distribution to adjust plasma in reaction chamber 10, electromagnetic control device
31 include one group or plurality of electromagnetic iron；The annular region of the close annular distance of subring 32 and workpiece to be machined S upper surface
Fringe region is stacked, and the annular region of the remote annular distance of subring 32 is mutually overlapped with liner 23, and this can prevent metal ion
By between the interstitial diffusion between liner 26 and bogey 27 to bogey 27 and the internal perisporium of reaction chamber 20, to prevent
It in reaction chamber to polluting.
It should be noted that in order to avoid causing effective utilization space of reaction chamber 20 to subtract because setting up and blocking ring 23
It is small, it can suitably reduce the width H of dead ring 22 diametrically, to ensure to set up to block the effective of the reaction chamber 20 after ring 23
Effective utilization space that utilization space blocks the reaction chamber 20 after ring 23 with not setting up is roughly the same, and this will not be anti-to being arranged on
Other parts in chamber 20 are answered to produce influence, so as to improve the stability of reaction chamber.Moreover, dead ring 22 is in footpath
Upward width H is no less than the width of Faraday shield 21 diametrically, to ensure the firm support faraday of dead ring 22
Shielding part 21.
It should also be noted that, in the present embodiment, blocking loop configuration of the ring 23 using closure, i.e. use monoblock type
Structure；But, the invention is not limited in this, in actual applications, split-type structural can also be used by blocking ring 23, and it includes
With Faraday shield 21 crack quantity and branch is blocked in position correspondingly, each blocking branch is used to block reaction chamber
Metal ion deposition in room 20 is in the corresponding junction cracked with dead ring 22, in this case, each screening
The length of gear branch in its circumferential direction according to circumstances should specifically be set, to prevent the metal ion in reaction chamber via adjacent
Two gap depositions for blocking between branch are in the junction with dead ring 22 of cracking.
The structural representation for the reaction chamber that Fig. 6 provides for second embodiment of the invention.Fig. 7 is Faraday shield in Fig. 6
Part, dead ring and the structural representation for blocking ring.Fig. 8 is to block the stereogram of ring in Fig. 6.Fig. 9 is the side view for blocking ring.Please
Fig. 6, Fig. 7, Fig. 8 and Fig. 9, the reaction chamber that the reaction chamber that the present embodiment is provided is provided with above-mentioned first embodiment are referred in the lump
Compare, equally include Faraday shield 21, dead ring 22 and block ring 23, due to Faraday shield 21, the and of dead ring 22
The 26S Proteasome Structure and Function for blocking ring 23 there has been detailed description in the above-described first embodiment, will not be repeated here.
Between the reaction chamber that the reaction chamber only provided below the present embodiment and above-mentioned first embodiment are provided not
It is described in detail with putting.Specifically, the convex annular extended towards Faraday shield 21 is formed with the upper end for blocking ring 23
231 are played, and annular protrusion 231 is not in contact with Faraday shield 21；And the close Faraday shield of annular protrusion 231
Level interval d1 between 21 one end and Faraday shield 21 adjacent thereto diametrically is less than gold in reaction chamber 20
Belong to the mean free path of ion, it is readily appreciated that, due to the d1 by level interval can prevent metal in reaction chamber 20 from
Son, in the junction with dead ring 22 of cracking, therefore, will reduce via the gap deposition of level interval d1 formation and block ring 23
The capacitor value Xc produced between Faraday shield 21, can ensure not produce influence to the technique in reaction chamber 20
Under the premise of increase level interval d and/or reduce relative area S.Specifically, as shown in figure 9, being blocked to reduce relative area S
At least one gap 232 is provided with the side wall of ring 23, and length of each gap 232 in the circumference for blocking ring 23 is less than instead
The mean free path of the metal ion in chamber 20 is answered, this can be avoided the metal ion in reaction chamber 20 from entering by the gap
Enter to block between ring 23 and Faraday shield 21, to avoid in the junction deposited metal film with dead ring 22 that cracks.
In the present embodiment, at least one gap 232 is along blocking being provided at circumferentially spaced for ring 23, and each edge of gap 232
Block ring 23 vertical direction set, its block the side wall of ring 23 on the surface be shaped as strip.But, the present invention
It is not limited thereto, in actual applications, at least one gap 232 can arbitrarily be set on the side wall for block ring 23, and often
The shape on ring 23 is blocked in individual gap 232 is not limited to strip, for example, shape of each gap 232 on ring 23 is blocked
For circle, in this case, the circular diameter should be less than the mean free path of the metal ion in reaction chamber 20, as long as
Gap 232, which is met, barrier metal ion into blocking between ring 23 and Faraday shield 21, to be belonged to a certain extent
In protection scope of the present invention.
Also, in the present embodiment, as shown in fig. 7, the lower end for blocking ring 23 is extended under dead ring 22 straight down
Hold, and the bottom of dead ring 22 is extended to towards the direction close to dead ring 22, this make it that can not only block ring 23 is stacked in
On the upper surface of liner 26, it is possible to achieve be grounded by liner 26, and can be by dead ring 22 and positioned at dead ring 22
Ring 23 is blocked in the pressure fixing of the Faraday shield 21 of upper surface.And in order to ensure to set up the reaction chamber blocked after ring 23
Effective utilization space that 20 effective utilization space blocks the reaction chamber 20 after ring 23 with not setting up is roughly the same, and will not
Influence is produced on other parts being arranged in reaction chamber 20, the thickness D for blocking ring 23 positioned at the bottom of dead ring 22 should
This is equal with the thickness that the in the vertical direction of dead ring 22 reduces.
It should be noted that in the present embodiment, when blocking ring 23 using split-type structural, to prevent in reaction chamber
Metal ion via the two neighboring gap deposition blocked between branch in the junction with dead ring 22 of cracking, can be every
Formed on individual its vertical two circumferential end face for blocking branch towards the annular protrusion for drawing shielding part extension, and annular protrusion
It is not in contact with Faraday shield 21, and one end and the farad adjacent thereto of the close Faraday shield 21 of annular protrusion
Level interval d1 between shielding part 21 diametrically is less than the mean free path of metal ion in reaction chamber 20.
As another technical scheme, the present invention also provides a kind of plasma processing device, including reaction chamber, reacts
The reaction chamber that the above-mentioned first embodiment of chamber or second embodiment are provided.
The plasma processing device that the present embodiment is provided, it is by using above-mentioned first embodiment or second embodiment
The reaction chamber of offer, can improve the stability of reaction chamber chamber processes, so as to improve plasma processing device
Stability, and then processing quality can be improved.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the original of the present invention is not being departed from
In the case of reason and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of reaction chamber, including it is nested with Faraday shield and dead ring in the inside sidewalls of the reaction chamber, institute
State Faraday shield to be stacked on the dead ring, at least one opened along being provided at circumferentially spaced for the Faraday shield
Seam, and the vertical direction setting cracked along the Faraday shield, it is characterised in that also including using non-magnetic gold
What category material was made blocks ring, described to block the inner side that ring is looped around the Faraday shield and the dead ring junction,
And be not in contact with the Faraday shield, and be grounded；It is described block ring be used to blocking metal in the reaction chamber from
Son is deposited on the junction cracked with the dead ring, also, the periphery wall for blocking ring and adjacent thereto described
Level interval between Faraday shield diametrically is less than the mean free path of metal ion in the reaction chamber.
2. reaction chamber according to claim 1, it is characterised in that the upper end for blocking ring is higher than the faraday screen
The lower end of shield, and the lower end for blocking ring is less than the lower end of the Faraday shield.
3. reaction chamber according to claim 2, it is characterised in that be formed with the upper end for blocking ring towards described
The annular protrusion of Faraday shield extension, and the annular protrusion and the Faraday shield are separately；And
Between one end of the close Faraday shield of the annular protrusion and the Faraday shield adjacent thereto
Level interval diametrically is less than the mean free path of metal ion in the reaction chamber.
4. reaction chamber according to claim 2, it is characterised in that the lower end for blocking ring extends to institute straight down
State the lower end of dead ring, and extend to towards the direction close to the dead ring bottom of the dead ring.
5. reaction chamber according to claim 1, it is characterised in that be provided with least one on the side wall for blocking ring
Individual gap, and length of each gap in the circumference for blocking ring is less than the metal ion in the reaction chamber
Mean free path.
6. reaction chamber according to claim 1, it is characterised in that also including induction coil and the radio frequency being electrically connected
Power supply, the induction coil is nested with the side-wall outer side in the reaction chamber, will be reacted when the radio-frequency power supply is opened
Process gas in chamber excites to form plasma.
7. reaction chamber according to claim 1, it is characterised in that also including liner, the inner bushing ring is around the reaction
The internal perisporium of chamber is set, and the liner is located at the bottom of the reaction chamber；The dead ring is stacked in the interior lining.
8. reaction chamber according to claim 1, it is characterised in that the reaction chamber also includes bogey, described
Bogey is located at the reaction chamber bottom, to carry workpiece to be machined.
9. reaction chamber according to claim 1, it is characterised in that also including target and dc source, the target is set
Put at the top of the reaction chamber, the dc source is arranged on outside the reaction chamber, and is electrically connected with the target,
To excite the process gas formation plasma in the reaction chamber.
10. a kind of plasma processing device, including reaction chamber, it is characterised in that the reaction chamber uses claim
Reaction chamber described in 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310750911.1A CN104746043B (en) | 2013-12-31 | 2013-12-31 | Reaction chamber and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310750911.1A CN104746043B (en) | 2013-12-31 | 2013-12-31 | Reaction chamber and plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104746043A CN104746043A (en) | 2015-07-01 |
| CN104746043B true CN104746043B (en) | 2017-10-13 |
Family
ID=53586278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310750911.1A Active CN104746043B (en) | 2013-12-31 | 2013-12-31 | Reaction chamber and plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104746043B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108573845B (en) * | 2017-03-07 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| WO2019033878A1 (en) | 2017-08-17 | 2019-02-21 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN107578975B (en) * | 2017-08-17 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN110396663B (en) * | 2018-04-24 | 2020-11-10 | 北京北方华创微电子装备有限公司 | Faraday shield barrel, annular piece, chamber assembly and re-sputtering chamber |
| CN109300764A (en) * | 2018-10-31 | 2019-02-01 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN111326391B (en) * | 2018-12-17 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050199491A1 (en) * | 2001-11-14 | 2005-09-15 | Tza-Jing Gung | Shields usable with an inductively coupled plasma reactor |
| CN102246270A (en) * | 2008-12-12 | 2011-11-16 | 富士胶片株式会社 | Chamber shield for vacuum physical vapor deposition |
| CN102418073A (en) * | 2010-09-27 | 2012-04-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering chamber, pre-cleaning chamber and plasma processing equipment |
| CN102465260A (en) * | 2010-11-17 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber assembly and semiconductor processing equipment applying same |
| CN102543636A (en) * | 2010-12-27 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing equipment |
-
2013
- 2013-12-31 CN CN201310750911.1A patent/CN104746043B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050199491A1 (en) * | 2001-11-14 | 2005-09-15 | Tza-Jing Gung | Shields usable with an inductively coupled plasma reactor |
| CN102246270A (en) * | 2008-12-12 | 2011-11-16 | 富士胶片株式会社 | Chamber shield for vacuum physical vapor deposition |
| CN102418073A (en) * | 2010-09-27 | 2012-04-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering chamber, pre-cleaning chamber and plasma processing equipment |
| CN102465260A (en) * | 2010-11-17 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber assembly and semiconductor processing equipment applying same |
| CN102543636A (en) * | 2010-12-27 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104746043A (en) | 2015-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104746043B (en) | Reaction chamber and plasma processing device | |
| CN102378462B (en) | Plasma processing apparatus | |
| KR101456810B1 (en) | Plasma processing apparatus | |
| JP5727281B2 (en) | Inductively coupled plasma processing equipment | |
| CN105097401B (en) | A kind of reaction chamber and semiconductor processing equipment | |
| TWI578369B (en) | Plasma processing device and regulating method of plasma distribution | |
| TWI573168B (en) | A plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method | |
| TW202006780A (en) | Dielectric window for inductively coupled plasma reactor and apparatus for processing substrate | |
| TW201508806A (en) | Plasma processing device | |
| TWI581328B (en) | Inductively Coupled Plasma Paste Processing Device and Plasma Etch Etching Method | |
| TW201423864A (en) | Plasma device and reaction chamber thereof | |
| TW201546870A (en) | Plasma processing device and plasma processing method | |
| CN105586566B (en) | A kind of reaction chamber and semiconductor processing equipment | |
| TW201438056A (en) | Magnetic shielding for plasma process chambers | |
| TWI553693B (en) | An inductance coil and inductively coupled plasma processing device | |
| TW201534183A (en) | Inductive-coupling-type plasma processing apparatus and self-inductive coil thereof and method thereof for manufacturing semiconductor substrate | |
| TW201724167A (en) | Plasma processing device capable of improving magnetic shielding effect | |
| CN104342621A (en) | Magnetic field adjusting apparatus and plasma processing equipment | |
| KR101281188B1 (en) | Inductively coupled plasma reactor | |
| KR101236397B1 (en) | Substrate processing apparatus | |
| KR101200743B1 (en) | Multi inductively coupled plasma reactor and method thereof | |
| CN104733275A (en) | Plasma process device | |
| TWI534890B (en) | Plasma processing device | |
| CN106937474A (en) | A kind of inductively coupled plasma processor | |
| KR101253297B1 (en) | Inductively coupled plasma antenna and Plasma processing apparatus using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |