CN106937474A - A kind of inductively coupled plasma processor - Google Patents
A kind of inductively coupled plasma processor Download PDFInfo
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- CN106937474A CN106937474A CN201511012715.XA CN201511012715A CN106937474A CN 106937474 A CN106937474 A CN 106937474A CN 201511012715 A CN201511012715 A CN 201511012715A CN 106937474 A CN106937474 A CN 106937474A
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- 230000006978 adaptation Effects 0.000 claims abstract description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000006698 induction Effects 0.000 claims abstract description 5
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
A kind of inductively coupled plasma processor, including：Reaction chamber side wall and the insulating materials window above the wall of reaction chamber side are common around reaction chamber is constituted, and reaction chamber is interior to include a pedestal, and pending substrate is fixed to pedestal top, and insulating materials window top includes radio frequency induction device；The inductor arrangement is connected to the first radio-frequency power supply by first adaptation；It is characterized in that the inductor arrangement includes Part I and the Part II around the Part I, include a barricade between wherein described inductor arrangement and insulating materials window, barricade below inductor arrangement Part I correspondence has the first aperture opening ratio, barricade below inductor arrangement Part II correspondence has the second aperture opening ratio, wherein the first aperture opening ratio is more than the second aperture opening ratio.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of faraday screen shield plate of inductively coupled plasma processor.
Background technology
Plasma processor is widely used in semi-conductor industry, for carrying out high-precision processing such as plasma etching, chemical vapor deposition to pending substrate（CVD）Deng.Which part plasma treatment process needs the plasma of high concentration, such as silicon etching process is typical such as deep hole silicon etching（TSV）, since it is desired that the via depth of etching needs more than 100um, so the plasma processing chamber of only high concentration can be only achieved the etching effect with economic worth, and inductively coupled plasma processor just has plasma concentration advantage high, so being widely used.If Fig. 1 is the typical structure of inductively coupled plasma processor, plasma processor includes including the base station 14 positioned at bottom in reaction cavity 100, cavity 100 that base station 14 is used to support also includes bottom electrode in pending substrate, base station.One radio-frequency power supply 10 conveys the radio-frequency power of low frequency（2Mhz）To radio frequency adaptation 12, confinement ring 18 is additionally provided with around base station to base station 14. by output low frequency radio-frequency power after impedance matching, is polluted for preventing the plasma leakage in reaction chamber from being formed to lower section gas extraction system.The top of reaction cavity 100 includes that being used for reacting gas admission line into compression ring 29 is set and heat isolation.Reaction chamber over top includes insulating materials window 28, and insulating materials window is generally made up of quartz.Insulating materials window 28 can be that circular flat board as shown in Figure 1 can also be the dome-shaped of upward protuberance, the top of insulating materials window 28 is provided with inductance coil 24, coil 24 passes through at least two radio-frequency cable 23a, 23b is connected to high-frequency radio frequency adaptation 22, and high-frequency radio frequency adaptation is received and comes from high frequency RF power source 20（13.56Mhz）The radio-frequency power of output, the reacting gas finally lighted in reaction chamber 100 carries out plasma treatment.One radome 30 of ground connection is placed RF energy and is spread to exterior space around inductance coil.Multiple gas channels are offered on radome 30 so that obtaining airflow takes away the heat that radio-frequency power feed-in inductance coil 24 brings.
Although inductive reactor has the advantages that but plasma concentration is high also has disadvantages that：
1. plasma concentration skewness, the magnetic field that inductance coil 24 is produced is downwardly into reaction chamber, the induction field intensity of generation is determined by the alternating flux in region, and outer peripheral areas around central area thus the magnetic flux of periphery be much larger than central area, so in reaction chamber 100, higher than the plasma concentration of central area, corresponding etching speed is also the high pressure center region of periphery to the plasma concentration of external zones.Etch rate as shown in Figure 2（etch rate）Distribution map shows that the etch rate in substrate edge region is significantly higher than other parts.
2. the magnetic field penetration that inductance coil is produced crosses insulating materials window 28 and enters reaction chamber, but inductance coil also can form Capacitance Coupled as conductor with the reaction chamber 100 of the base station 14 of lower section and ground connection in itself, Capacitance Coupled can cause the plasma sheath of the lower surface of insulating materials window 28 thickening, more high-energy particle bombardment insulating materials windows 28, this can cause particulate matter to drop to underlying substrate formation pollution downwards from insulating materials window 28.So prior art is provided with a faraday screen shield plate 25 between inductance coil 24 and insulating materials window 28, prior art is as shown in Fig. 2 in US5540800, the area of faraday screen shield plate 80 is very big, covers the space between all inductance coils and insulating materials window.But in the moment of electricity combustion plasma, inductively coupled plasma processor is really the direct electric field for needing to be produced using Capacitance Coupled, so groove or bore openings in order to enough area must be opened up in faraday screen shield plate, to allow direct electric field to produce between inductance coil and lower electrode.The faraday screen shield plate of final inductance-coupled coil needs aperture area to increase again in order to need the opening of little area in long-term plasma treatment in order to light plasma, or increases cost and system complexity, is separately provided the device that plasma is lighted.This is the contradiction that cannot be reconciled for a pair for the design of aperture area size, can only find acceptable number range according to the demand of actual processor.
So need a kind of new method or apparatus to solve to drop faraday screen shield plate design difficulty on device for inductively coupled plasma processing in the industry, while improve the homogeneity of plasma distribution in reaction chamber, to improve the uniformity of plasma treatment effect.
The content of the invention
The problem that the present invention is solved is the treatment effect uniformity for promoting device for inductively coupled plasma processing while reducing particle contamination, the invention provides a kind of inductively coupled plasma processor, including：Reaction chamber side wall and the insulating materials window above the wall of reaction chamber side are common around reaction chamber is constituted, and reaction chamber is interior to include a pedestal, and pending substrate is fixed to pedestal top, and insulating materials window top includes radio frequency induction device；The inductor arrangement is connected to the first radio-frequency power supply by first adaptation；The pedestal is connected to the second radio-frequency power supply by second adaptation；It is characterized in that the inductor arrangement includes Part I and the Part II around the Part I, include a barricade between wherein described inductor arrangement and insulating materials window, barricade below inductor arrangement Part I correspondence has the first aperture opening ratio, barricade below inductor arrangement Part II correspondence has the second aperture opening ratio, wherein the first aperture opening ratio is more than the second aperture opening ratio.
Wherein the first aperture opening ratio be more than 50%, the second aperture opening ratio be less than 10%, the first optimal aperture opening ratio reach 100% namely inductor arrangement Part I lower zone do not set barricade.
Barricade below the inductor arrangement Part II correspondence is the annular being made up of metallic conductor, include on the barricade in the open slot of uniform arrangement on annulus of radiation direction, annulus is divided into the equally distributed conducting strip of polylith by the open slot, and the polylith conducting strip is interconnected by the connecting portion positioned at annulus inner side or outside and fixed.
Wherein inductor arrangement can be an inductance coil, the inductance coil inboard wire constitutes the Part I of the inductor arrangement, the inductance coil outboard wire constitutes inductor arrangement Part II, and the Part I and Part II of wherein inductor arrangement are mutually in series.Inductor arrangement can also be made up of two inductance coils, including the first and second two inductance coils, and first inductance coil constitutes the Part I of the inductor arrangement, and second inductance coil constitutes the Part II of the inductor arrangement.First inductance coil and the second inductance coil are passed through the power Independent adjustable of first inductance coil and the second inductance coil by the cable connection at respective two ends to first adaptation, the first radio-frequency power supply.The operation of inductively coupled plasma processor includes that plasma lights step and plasma treatment step, wherein the power that the first inductance coil is input into plasma treatment step is less than the power being input into lighting step in plasma.
Also enter compression ring including one between reaction chamber side wall top and insulating materials window, for make reacting gas from top side wall to reaction chamber in be passed through.
Insulating materials window lower surface is coated with one layer of resistant to plasma corrosion material layer, and the resistant to plasma corrosion material layer includes yittrium oxide, and the resistant to plasma corrosion material thickness degree is more than 50um, and voidage is less than 3%.
Brief description of the drawings
Fig. 1 is prior art inductively coupled plasma processor schematic diagram；
Fig. 2 is etch rate distribution map in prior art inductively coupled plasma processor；
Fig. 3 a are inductively coupled plasma processor schematic diagrames of the present invention；
Fig. 3 b are the top views of faraday screen shield plate of the present invention；
Fig. 4 is etch rate distribution map in inductively coupled plasma processor of the present invention；
Fig. 5 is inductively coupled plasma processor second embodiment schematic diagram of the present invention.
Specific embodiment
It is as shown in Figure 3 a inductively coupled plasma processor schematic diagram of the present invention, the present invention specific similar basic structure compared with the prior art shown in Fig. 1 differs primarily in that faraday screen shield plate 26 of the invention only shields inductance coil periphery coil.Faraday screen shield plate 26 is made up of conductor, and the conductor can have metal such as aluminium, copper etc., or other good conductors.The top view of annular faraday screen shield plate 26 as shown in Figure 3 b, wherein faraday screen shield plate inner side includes that be mutually isolated for barricade conductor by multiple open slots, the round conductor for completing only is constituted in outside, such graphic designs can cause that the electric field that the outside of inductance coil 24 produces is shielded by barricade 26.If during faraday screen shield plate electricity floating ground of the present invention, the magnetic field that inductance coil 24 is produced can also be partially offset, vertical direction magnetic field can on the shield plates induce current loop when through barricade 26, these electric currents can become heat loss and fall, these electric currents can also generate induced field simultaneously, the magnetic direction that these magnetic fields produce with inductance coil 24 conversely, so can cancel each other, the magnetic field for eventually weakening the generation of fringe region inductance coil is fed into the magnetic field intensity of reaction chamber between the two.When faraday screen shield plate 26 of the present invention is grounded, due to having identical potential on whole barricade, induced-current cannot be produced so cannot also be produced with rightabout induced field, the magnetic field inside feed-in reaction chamber 100 will not also be reduced because barricade 26 is blocked.
Reacting gas is passed through reaction chamber 100 by inductively coupled plasma processor of the present invention by entering compression ring 29 first in plasma ignition procedures, and reacting gas can also be by shower nozzle downward in the middle of other positions such as insulating materials window.High frequency RF power source 20 passes through adaptation 22 to the feed-in RF energy of inductance coil 24 after reacting gas is passed through, field coupling is produced without between the Inside coil and lower section pedestal 14 or the side wall of reaction chamber 100 blocked by barricade 26, high-frequency electric field lights the local plasma in reaction chamber.The magnetic field that plasma is ignited the generation of rear inductance coil 24 senses the further ionization reaction gas generation more polyion of electric field of generation in reaction chamber, and maintains the plasma of high concentration.Due to 26 peripherally located region inductance coils of masking of barricade of the present invention, so the reason for plasma density of central area does not reduce reaction because of field coupling compared with the prior art in correspondence reaction chamber 100 is increased slightly, and the plasma concentration in reaction chamber inner peripheral region is shielded due to the electric field that induction coil is produced, so plasma concentration can be close with prior art.So on the whole using the subregion barricade 26 of structure of the present invention, can cause fringe region plasma concentration with respect to neutral region reduction, such effect can just optimize the uneven defect of inductively coupled plasma processor concentration distribution inherently.Simultaneously because light plasma being realized by the inductance coil of central area, so outer peripheral areas only need to consider shielding electric field, it need not be the opening for lighting reserved large area, so the upper shed area of barricade of the invention 26 can be less than correlation technique, therefore electric field shielding effect more preferably, further reduces the plasma concentration of the lower zone of coil 24.The distribution map of etch rate after the faraday screen shield plate 26 using structure of the present invention is illustrated in figure 4, as seen from the figure in substrate edge region（At 100mm）Etch rate inhomogeneities be significantly improved with respect to the obvious reduction shown in Fig. 2, and the etch rate uniformity of entirety.
The inductance coil not shielded in inductively coupled plasma processor of the present invention is located at insulating materials window center or zone line, it is corresponding, determined due to the natural plasma distribution form of inductively coupled plasma reactor, the plasma concentration of reaction chamber interior insulation material window lower surface center or zone line is inherently far below outer peripheral areas, reacting gas of the present invention is also to be passed through from the compression ring 29 that enters of reaction chamber top side wall simultaneously, further determine that the plasma and reacting gas of high concentration are present in outer peripheral areas, when only just causing to reach substrate by the diffusion from top to bottom of long range, the diffusion of plasma of periphery is to zone line, it is finally reached the whole more uniform effect of substrate surface plasma concentration.So the plasma concentration that insulating materials window lower surface central area produces is very low, corresponding sheaths thickness is also small, and the weaker bombardment of ion generation will not produce a large amount of particles to drop on underlying substrate, it is ensured that Substrate treatment quality.
In inductively coupled plasma processor of the present invention, the inductance coil outer dia substrate to be etched more than lower section, so if not carrying out electric field shielding to inductance coil outer peripheral areas, can cause that the electric field line in substrate edge region is tilted upward and be coupled to inductance coil periphery, substrate edge areas through holes mouthful are inclined during this can cause etching process, further lead to not carry out the deposition of next step, fringe region semiconductor device failure.Thoroughly shielded so that the inclined region of electric field line, only remains vertical coupled electric field line using after the present invention, etching through hole pattern is not influenceed.
Second embodiment of the invention is illustrated in figure 5, except 24 the second inductance coils 27 for also including being located at central area, inductance coil 27 is connected to adaptation and is passed through the radio-frequency power from radio-frequency power supply 20 inductance coil by two radio-frequency cables 25a, 25b in figure.Covered by barricade 26 without barricade 26, the lower section of inductance coil 24 lower section of second coil 27.The electric current for being passed through the inductance coil 27 of inductance coil 24 and second can be with independent control, it is passed through to the second coil 27 positioned at center when needing and firing plasma with electric capacity Coupling point at the beginning more high-power, less power is passed through to peripherally located inductance coil 24, due to not blocked by barricade 26, the radio-frequency power of the second coil 27 smoothly can light plasma below whole feed-ins.The radio-frequency power for being even switched off the second coil of feed-in 27 can be reduced after lighting, while increasing or maintaining the power of feed-in inductance coil 24 with the plasma of high concentration in reaction chamber 100 below maintaining.
In order to reduce because Ions Bombardment is not dropped risk by the caused particle of the shielding area of barricade 26, one layer of resistant to plasma corrosion material yittrium oxide can be plated in the lower surface of insulating materials window 28（Y2O3）The technology described by Chinese patent application 201210421403.4 " for the gas spray and its coating shaping method of plasma " that can have preferably been applied using applicant, the thickness of Yttrium oxide material layer can be more than 50um, and porosity is less than 3%.After the lower surface of insulating materials window 28 addition coating, because coating is abundant, close structure is difficult by plasma etching, even if having the accelerated bombardment of a small amount of ion to coating, there will not be particle detachment.
The present invention is in the second embodiment shown in first embodiment as shown in Figure 3 a and Fig. 5, the central area correspondence lower section of inductor arrangement does not set barricade, outer peripheral areas set barricade 26, barricade can also be set below the correspondence of inductance coil central area according to inventive principle, but the barricade aperture opening ratio of central area（Aperture area/(aperture area+shielding surface)）The significantly larger than barricade 26 of outer peripheral areas, both can be independent mutually, or become one.The such as aperture opening ratio of central area barricade is more than 50%, and the aperture opening ratio of outer peripheral areas is less than 10%, it is such set it is ensured that initial stage plasma light it is smooth, moreover it is possible to adjust the uniformity of lower section plasma distribution in subsequent processes.
Integrated application air intake structure of the present invention, inductance coil sets the design with peripheral Faraday shield ring, the reliability that plasma is lighted can be ensured, improve the uniformity of overall plasma distribution improves the pattern in substrate edge region etch hole simultaneously, the generation of particulate matter on insulating materials window will not be also increased simultaneously, so the present invention is only achieved that goal of the invention with simple structure, significant effect is achieved.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, can be made various changes or modifications, therefore protection scope of the present invention should be defined by claim limited range.
Claims (10)
1. a kind of inductively coupled plasma processor, including：Reaction chamber side wall and the insulating materials window above the wall of reaction chamber side are common around reaction chamber is constituted, and reaction chamber is interior to include a pedestal, and pending substrate is fixed to pedestal top, and insulating materials window top includes radio frequency induction device；
The inductor arrangement is connected to the first radio-frequency power supply by first adaptation；
The pedestal is connected to the second radio-frequency power supply by second adaptation；
It is characterized in that the inductor arrangement includes Part I and the Part II around the Part I, include a barricade between wherein described inductor arrangement and insulating materials window, barricade below inductor arrangement Part I correspondence has the first aperture opening ratio, barricade below inductor arrangement Part II correspondence has the second aperture opening ratio, wherein the first aperture opening ratio is more than the second aperture opening ratio.
2. inductively coupled plasma processor as claimed in claim 1, it is characterised in that first aperture opening ratio is more than 50%, and the second aperture opening ratio is less than 10%.
3. inductively coupled plasma processor as claimed in claim 2, it is characterised in that first aperture opening ratio 100%.
4. inductively coupled plasma processor as claimed in claim 1, it is characterized in that, the inductor arrangement is an inductance coil, the inductance coil inboard wire constitutes the Part I of the inductor arrangement, the inductance coil outboard wire constitutes inductor arrangement Part II, and the Part I and Part II of wherein inductor arrangement are mutually in series.
5. inductively coupled plasma processor as claimed in claim 1, it is characterized in that, the inductor arrangement is that two inductance coils include the first and second two inductance coils, first inductance coil constitutes the Part I of the inductor arrangement, and second inductance coil constitutes the Part II of the inductor arrangement.
6. inductively coupled plasma processor as claimed in claim 5, it is characterized in that, first inductance coil and the second inductance coil are passed through the power Independent adjustable of first inductance coil and the second inductance coil by the cable connection at respective two ends to first adaptation, the first radio-frequency power supply.
7. inductively coupled plasma processor as claimed in claim 6, it is characterized in that, the inductively coupled plasma processor operation includes that plasma lights step and plasma treatment step, wherein the power that the first inductance coil is input into plasma treatment step is less than the power being input into lighting step in plasma.
8. inductively coupled plasma processor as claimed in claim 1, it is characterised in that also enter compression ring including between reaction chamber side wall top and insulating materials window, for make reacting gas from top side wall to reaction chamber in be passed through.
9. inductively coupled plasma processor as claimed in claim 1, characterized in that, the insulating materials window lower surface is coated with one layer of resistant to plasma corrosion material layer, the resistant to plasma corrosion material layer includes yittrium oxide, the resistant to plasma corrosion material thickness degree is more than 50um, and voidage is less than 3%.
10. a kind of inductively coupled plasma processor as claimed in claim 1, it is characterized in that, barricade below the inductor arrangement Part II correspondence is the annular being made up of metallic conductor, open slot in the uniform arrangement of radiation direction is included on annulus on the barricade, annulus is divided into the equally distributed conducting strip of polylith by the open slot, and the polylith conducting strip is interconnected by the connecting portion positioned at annulus inner side or outside and fixed.
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| CN201511012715.XA CN106937474B (en) | 2015-12-31 | 2015-12-31 | Inductively coupled plasma processor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786420A (en) * | 2019-11-07 | 2021-05-11 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and method for processing substrate by using same |
| CN114893374A (en) * | 2022-05-19 | 2022-08-12 | 哈尔滨工业大学 | Radio frequency ion thruster for strengthening ionization |
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