CN104733279B - Plasma etching system - Google Patents
Plasma etching system Download PDFInfo
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- CN104733279B CN104733279B CN201310719121.7A CN201310719121A CN104733279B CN 104733279 B CN104733279 B CN 104733279B CN 201310719121 A CN201310719121 A CN 201310719121A CN 104733279 B CN104733279 B CN 104733279B
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Abstract
A plasma etching system is characterized in that the plasma etching system comprises a radio-frequency source, an end point detecting system and a reaction chamber, the end point detecting system comprises a spectrograph which comprises an optical grating, and the radio-frequency source and the spectrograph are connected with the reaction chamber and connected in parallel; the radio-frequency source is controlled by a first pulse signal, the on and off of the optical grating of the spectrograph are controlled through a second pulse signal, and the first pulse signal and the second pulse signal are synchronous. By means of the pulse plasma etching system, the end point of the plasma etching technology can be detected.
Description
Technical field
The present invention relates to plasma etching field, more particularly, to a kind of plasma etching system.
Background technology
In plasma etch process, due to etachable material not good selection ratio it is therefore desirable to etching terminal inspection
Survey detection etch technique and stop etching to reduce to underlying material of overetch.
End-point detecting system measures some different parameters, such as the change of etch rate, removed corrosion in etching
The change of active reaction agent in the type of product or gas discharge.A kind of method for end point determination is emission spectrometry.This
One measuring method is integrated in etching cavity to carry out real-time monitoring.
In continuous wave radio frequency plasma etching process, using based on light intensity change, etching terminal is detected.But
It is, because the change of light intensity is relevant with plasma, in double frequency or multifrequency pulse plasma, plasma emission spectroscopy
Intensity periodically can change with radio-frequency pulse, therefore, applies becoming based on light intensity in continuous wave radio frequency plasma
Change in the system double-frequency pulse plasma etch process carry out terminal detection and can not use.
Content of the invention
In view of this, the invention provides a kind of plasma etching system, work is etched to pulsed plasma with realization
The end point determination of skill.
In order to realize foregoing invention purpose, present invention employs following technical scheme：
A kind of plasma etching system, including, radio frequency source, end-point detecting system and reaction chamber, described end point determination
System includes spectrometer, and described spectrometer includes grating, wherein, described radio frequency source and described spectrometer respectively with described reaction chamber
Connect, described radio frequency source and described spectrometer are connected in parallel；Described radio frequency source is controlled by the first pulse signal, described spectrometer light
The switch of grid is controlled by the second pulse signal, and described first pulse signal and described second pulse signal are synchronous.
More preferably, described radio frequency source is the first pulse radiation frequency source, described first pulse signal and described second pulse signal
It is to be produced by the second pulse radiation frequency source, described first pulse radiation frequency source and described spectrometer are connected in the second pulse radiation frequency source in parallel
And described reaction chamber between.
More preferably, also include, the pulse counter between described second pulse radiation frequency source and described spectrometer, described
Pulse counter is used for adding up the quantity of described pulse, after the quantity of described pulse reaches predetermined value, controls described spectrometer
The switch of grating.
More preferably, described end-point detecting system is detected using the emission spectrum of special wavelength light；Described specific wavelength
The just light of the specific wavelength of the reacting gas in plasma etch process or byproduct of reaction generation.
More preferably, described end-point detecting system is detected using the absorption spectrum of special wavelength light；Described specific wavelength
The just light of the specific wavelength of the reacting gas in plasma etch process or byproduct of reaction generation.
Compared to prior art, the present invention has the advantages that：
The plasma etching system that the present invention provides is pulsed plasma etching system, wherein, for controlling radio frequency
First pulse signal in source and the second pulse signal synchronization for controlling the spectrometer grating switch of end-point detecting system.Due to
This two pulse signal is synchronous, and the generation of pulsed plasma is synchronous with the switch of grating to produce plasma that is to say, that working as
When, grating is opened, and when not producing plasma, grating is closed.So, the light intensity that spectrometer detects is to produce plasma
When light intensity, thus, the light intensity detecting is continuous, rather than pulse feature, so when light intensity changes, then show
Plasma etch process reaches terminal.Thus the plasma etching system being provided by the present invention can detect pulse etc. from
The terminal of daughter etching technics.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
The signal that Fig. 1 is the pulse power with the asynchronous light intensity leading to of spectrometer grating switch periodic swinging in time
Figure；
Fig. 2 is a kind of structural representation of plasma etching system of the embodiment of the present invention；
Fig. 3 is the structural representation of another kind of plasma etching system of the embodiment of the present invention.
Specific embodiment
Purpose, technical scheme and advantage for making the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described it is clear that described embodiment is
The a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment being obtained under the premise of not making creative work, broadly falls into the scope of protection of the invention.
In pulsed plasma etching system, in order to realize the detection to etching terminal, pulse signal pair can be passed through
The switch of spectrometer grating is controlled, and is opened with realizing spectrometer grating when pulse signal is for high-frequency signal, in pulse letter
Number for closing during low frequency signal, the light intensity so collecting be continuous, thus can by the change of light intensity realization reciprocity from
The end point determination of daughter etching technics.
In the control method of the switch to spectrometer grating by pulse signal, its difficult point is that how to realize pulse penetrates
The synchronization of the switch of frequency source and spectrometer grating.If both are synchronous bad, so, some switch time of spectrometer grating and arteries and veins
The some switch time rushing radio frequency source is inconsistent, and derivative spectomstry collection point is likely located at pulse radiation frequency source opening or closed mode
Diverse location, or both switch times are inconsistent, lead to the light intensity collecting to assume rectilinear oscillation in time, such as
Shown in Fig. 1.Due to the rectilinear oscillation of light intensity, realize the inaccurate or very difficult survey of detection of etching terminal by the change of light intensity
To etching terminal.
In order that pulse radiation frequency source is synchronous with the switch of spectrometer grating, and then obtain stable plasma emission spectroscopy
Light intensity, the invention provides a kind of plasma etching system.
As shown in figure 1, plasma etching system provided in an embodiment of the present invention, including the first pulse radiation frequency source 01,
Two pulse radiation frequency sources 02, end-point detecting system 03 and reaction chamber 04, wherein, end-point detecting system 03 using plasma is launched
Spectrographic technique carries out end point determination, and it includes spectrometer, and described spectrometer includes grating.The switch of its grating can control collection
The time period of light.When grating is opened, spectrometer collection light, form spectrum.When grating is closed, spectrometer stops collection light,
There is no Spectrum Formation, when grating is again turned on, continue collection light, so spectrum is only just formed when grating is opened, closing
When do not form spectrum.
In plasma etching system provided in an embodiment of the present invention, the first pulse radiation frequency source 01 and end-point detecting system
03 is connected in parallel between the second pulse radiation frequency source 02 and reaction chamber 04.By the second pulse radiation frequency source 02 Synchronization Control the first pulse radiation frequency
Source 01 and end-point detecting system 03.
Specifically, within a pulse period, when the second pulse radiation frequency source 02 is in the power output time period, its output
Radio-frequency power be divided into two-way, a road is sent to the first pulse radiation frequency source 01, controls the first pulse radiation frequency source 01 to produce pulse work(
Rate, this radio-frequency power promotes the material in reaction chamber 04 to produce plasma, to the substrate to be etched being placed in reaction chamber 04
Carry out plasma etching.Meanwhile, the radio-frequency power of the second pulse radiation frequency source 02 output is sent to end-point detecting system 04, controls
Spectrometer grating on this end-point detecting system 04 is opened, and the light intensity in reaction chamber 04 is acquired, and forms spectrum.When second
When pulse radiation frequency source 02 is in the stopping power output time period, now, the second pulse radiation frequency source 02 cannot be triggered the first pulse and be penetrated
Frequency source 01 and the unlatching of spectrometer grating, thus also just cannot produce plasma in reaction chamber 03 and then cannot be carried out etc. from
Daughter etches, simultaneously as spectrometer grating is not turned on, thus also would not gather the light intensity in reaction chamber.
Only when the second pulse radiation frequency source 02 enters the next pulse cycle, when the second pulse radiation frequency source 02 is again at
During the power output time period, meanwhile, spectrometer grating is opened, the light intensity in collection reaction chamber.Within this pulse period, when second
When pulse radiation frequency source is in the stopping power output time period, the first pulse radiation frequency source also stops the power output time period, in reaction
Do not produce plasma in chamber 04, and then carry out plasma etching in reaction chamber 04, meanwhile, spectrometer grating is closed, and stops
The only light intensity in collection reaction chamber.Using same method, within continuously multiple pulse periods, repeatedly execute above-mentioned steps.
Carry out just opening during plasma etching because spectrometer grating only has plasma to produce in reaction chamber, carry out
Intensity collection in reaction chamber, the time period when time period of such spectrometer collection light intensity produces for plasma.Thus light
The light intensity that spectrometer detects is continuous, rather than pulse feature.Thus, can be realized by above-mentioned plasma etching system
End point determination to multifrequency or double-frequency pulse plasma etch process.
Simultaneously as the switch of the first pulse radiation frequency source and spectrometer grating is controlled by same second pulse radiation frequency source,
Achieve the synchronization of the first pulse radiation frequency source and spectrometer grating switch.Thus also just overcome and opened due to radio frequency source and spectrometer
Close asynchronous lead to spectral period vibration problem, and then make plasma etch process end point determination more accurate
Reliable.
In plasma etching system described above, within the pulse period in a second pulse radiation frequency source, spectrometer
Grating just once opened and closed.Now, when the pulse frequency in the second pulse radiation frequency source is relatively low, the switch speed of grating
Degree can get caught up in the switch of the pulse signal that the second pulse radiation frequency source sends.But, when pulse frequency is higher, for example, it is higher than
During 500Hz, the switching speed of spectrometer grating cannot keep up with the frequency of the pulse signal that the second pulse radiation frequency source 02 sends, this
When still can there is switch and the nonsynchronous problem of pulse signal in the second pulse radiation frequency source of spectrometer grating.For this reason, it is permissible
As shown in figure 3, setting up a pulse counter 05 between the second pulse radiation frequency source 02 and end-point detecting system 04.This step-by-step counting
Device 05 is used for adding up the number of pulses of the second pulse radiation frequency source 02 transmission, and this pulse counter 05 is used for controlling end point determination
The switch of the spectrometer grating in system 04.After the umber of pulse that pulse counter 05 adds up reaches predetermined value, trigger spectrometer
Grating is opened, and when next low frequency signal produces, triggering spectrometer grating is closed.
It should be noted that described predetermined value is the integer not less than 2.Can be for example 5,10 etc..This predetermined value big
Little jointly can be determined according to the pulse frequency of the switching speed of grating and pulse radiation frequency source.Added up by pulse counter
After umber of pulse reaches predetermined value, just trigger opening of spectrometer grating, grating so can be made to have time enough to complete to open
And shutoff operation, improve synchronous accuracy, also achieve the gate-controlled switch with pulse signal for the grating simultaneously.
It should be noted that the end-point detecting system described in the embodiment of the present invention can utilize plasma emlssion spectrometry
Detected.Characteristic spectral line as the light by a certain during producing plasma etching or some specific wavelengths is carried out
Detection.The light of this specific wavelength can be the specific wavelength of reacting gas in plasma etch process or byproduct of reaction generation
Light.Additionally, the end-point detecting system described in the embodiment of the present invention can also be detected using plasma absorption spectroscopic methodology.
Characteristic spectral line as the light using a certain or some specific wavelengths for the feature according to plasma etch process is detected, same
Penetrate spectroscopic methodology to be similar to, the light of the specific wavelength that this absorption spectrum adopts can also for reacting gas in plasma etch process or
The light of the specific wavelength that byproduct of reaction produces.
In order to realize the same of radio frequency source and spectrometer grating switch in plasma etching system described in above-described embodiment
Step, the method using being controlled by same radio frequency source.In addition to this embodiment, can also be realized using other embodiment.As
Radio frequency source and spectrometer grating are respectively adopted different pulse signal sources and control, and such as radio frequency source is controlled by the first pulse signal, light
Spectrometer grating is controlled by the second pulse signal.As long as the first pulse signal of control radio frequency source and spectrometer grating and the second pulse
Signal works asynchronously.
The above is only the preferred embodiment of the present invention it is noted that ordinary skill people for the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (4)
1. a kind of plasma etching system is it is characterised in that including, radio frequency source, end-point detecting system and reaction chamber, described
End-point detecting system includes spectrometer, and described spectrometer includes grating, wherein, described radio frequency source and described spectrometer respectively with institute
State reaction chamber to connect, described radio frequency source and described spectrometer are connected in parallel；Described radio frequency source is controlled by the first pulse signal, described
The switch of spectrometer grating is controlled by the second pulse signal, and described first pulse signal and described second pulse signal are synchronous；
Wherein, described radio frequency source is the first pulse radiation frequency source, and described first pulse signal and described second pulse signal are by the
Two pulse radiation frequency sources produce, and described first pulse radiation frequency source and described spectrometer are connected in the second pulse radiation frequency source and described in parallel
Between reaction chamber.
2. etching system according to claim 1 is it is characterised in that also include, positioned at described second pulse radiation frequency source and
Pulse counter between described spectrometer, described pulse counter is used for adding up the quantity of described pulse, when described pulse
After quantity reaches predetermined value, control the switch of described spectrometer grating.
3. the etching system according to any one of claim 1-2 is it is characterised in that described end-point detecting system is using specific
The emission spectrum of wavelength light is detected；The just reacting gas in plasma etch process or the reaction of described specific wavelength
The light of the specific wavelength that accessory substance produces.
4. the etching system according to any one of claim 1-2 is it is characterised in that described end-point detecting system is using specific
The absorption spectrum of wavelength light is detected；The just reacting gas in plasma etch process or the reaction of described specific wavelength
The light of the specific wavelength that accessory substance produces.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310719121.7A CN104733279B (en) | 2013-12-23 | 2013-12-23 | Plasma etching system |
| TW103141957A TWI595222B (en) | 2013-12-23 | 2014-12-03 | Plasma etching system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310719121.7A CN104733279B (en) | 2013-12-23 | 2013-12-23 | Plasma etching system |
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| CN104733279A CN104733279A (en) | 2015-06-24 |
| CN104733279B true CN104733279B (en) | 2017-02-15 |
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| CN201310719121.7A Active CN104733279B (en) | 2013-12-23 | 2013-12-23 | Plasma etching system |
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| TW (1) | TWI595222B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733277B (en) * | 2013-12-23 | 2017-03-08 | 中微半导体设备(上海)有限公司 | Plasma etching system |
| CN107546141B (en) * | 2016-06-28 | 2020-12-04 | 中微半导体设备(上海)股份有限公司 | Apparatus and method for monitoring plasma process |
| CN119124028B (en) * | 2024-11-08 | 2025-05-06 | 上海车仪田科技有限公司 | Anti-interference integrated etching end point detection equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374327A (en) * | 1992-04-28 | 1994-12-20 | Tokyo Electron Limited | Plasma processing method |
| TW200506388A (en) * | 2003-08-14 | 2005-02-16 | Advanced Energy Ind Inc | Sensor array for measuring plasma characteristics in plasma processing environments |
| CN1914618A (en) * | 2004-03-30 | 2007-02-14 | 东京毅力科创株式会社 | Method and system for run-to-run control |
| CN101401187A (en) * | 2006-03-10 | 2009-04-01 | 瓦里安半导体设备公司 | Technique for monitoring and controlling a plasma process |
| CN104733277A (en) * | 2013-12-23 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Plasma etching system |
-
2013
- 2013-12-23 CN CN201310719121.7A patent/CN104733279B/en active Active
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2014
- 2014-12-03 TW TW103141957A patent/TWI595222B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374327A (en) * | 1992-04-28 | 1994-12-20 | Tokyo Electron Limited | Plasma processing method |
| TW200506388A (en) * | 2003-08-14 | 2005-02-16 | Advanced Energy Ind Inc | Sensor array for measuring plasma characteristics in plasma processing environments |
| CN1914618A (en) * | 2004-03-30 | 2007-02-14 | 东京毅力科创株式会社 | Method and system for run-to-run control |
| CN101401187A (en) * | 2006-03-10 | 2009-04-01 | 瓦里安半导体设备公司 | Technique for monitoring and controlling a plasma process |
| CN104733277A (en) * | 2013-12-23 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Plasma etching system |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI595222B (en) | 2017-08-11 |
| TW201525440A (en) | 2015-07-01 |
| CN104733279A (en) | 2015-06-24 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |