CN104679082B - A kind of adaptive circuit and voltage signal amplifier - Google Patents
A kind of adaptive circuit and voltage signal amplifier Download PDFInfo
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- CN104679082B CN104679082B CN201310631931.7A CN201310631931A CN104679082B CN 104679082 B CN104679082 B CN 104679082B CN 201310631931 A CN201310631931 A CN 201310631931A CN 104679082 B CN104679082 B CN 104679082B
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Abstract
The invention provides a kind of adaptive circuit and voltage signal amplifier, wherein, described adaptive circuit comprises: difference turns single-end circuit, voltage detection circuit, wherein: the first and second voltage input ends that described difference turns single-end circuit are connected with the first voltage and the second voltage respectively, for being tertiary voltage by described first voltage and the second voltage transitions; The power supply that described voltage detection circuit is used for turning according to described difference single-end circuit produces the first control voltage and the second control voltage, described difference turns single-end circuit and comprises dividing potential drop Circuit tuning, and described dividing potential drop Circuit tuning is used for adjusting described dividing potential drop Circuit tuning according to described first control voltage and the second control voltage and turns dividing potential drop in single-end circuit in described difference.Described adaptive circuit and voltage signal amplifier can be applicable to different power supplys, have power supply applicability in a big way.
Description
Technical field
Analog signal processing technology field of the present invention, particularly relates to a kind of adaptive circuit and voltage signal amplifier.
Background technology
In the prior art, when the circuit result that difference turns single-end circuit is fixing, its power supply that can be suitable for also has an approximate range, when the power supply that described difference turns single-end circuit exceeds described scope for a long time, the magnitude of voltage of such as power supply continues too high, and the metal-oxide-semiconductor that described difference turns in single-end circuit may occur punch-through.
Summary of the invention
The technical matters that the present invention solves is to provide a kind of new adaptive circuit and voltage signal amplifier, to widen the range of voltage values that difference turns the power supply of single-end circuit.
The embodiment provides a kind of adaptive circuit, described adaptive circuit comprises: difference turns single-end circuit, voltage detection circuit, wherein:
The first and second voltage input ends that described difference turns single-end circuit are connected with the first voltage and the second voltage respectively, for being tertiary voltage by described first voltage and the second voltage transitions;
The power supply that described voltage detection circuit is used for turning according to described difference single-end circuit produces the first control voltage and the second control voltage,
Described difference turns single-end circuit and comprises dividing potential drop Circuit tuning, and described dividing potential drop Circuit tuning is used for adjusting described dividing potential drop Circuit tuning according to described first control voltage and the second control voltage and turns dividing potential drop in single-end circuit in described difference.
Alternatively, described difference turns single-end circuit and comprises current mirroring circuit, described dividing potential drop Circuit tuning and first crystal and transistor seconds, wherein:
The power supply that described current mirror turns single-end circuit with described difference is connected;
Described dividing potential drop Circuit tuning comprises first end, second end, 3rd end and the 4th end, the first end of described dividing potential drop Circuit tuning is connected with the first output terminal of described current mirror, second end of described dividing potential drop Circuit tuning is connected with the second output terminal of described current mirror, 3rd end of described dividing potential drop Circuit tuning is connected with the drain electrode of the first transistor, 4th end of described dividing potential drop Circuit tuning is connected with the drain electrode of transistor seconds, the source electrode of described the first transistor and the source electrode of described transistor seconds ground connection respectively, the grid of described the first transistor and the grid of described transistor seconds connect described first voltage and the second voltage respectively,
Described dividing potential drop Circuit tuning is used for adjusting dividing potential drop between the second end of dividing potential drop between the first end of described dividing potential drop Circuit tuning and the 3rd end and described dividing potential drop Circuit tuning and the 4th end according to described first control voltage and the second control voltage.
Alternatively, described dividing potential drop Circuit tuning comprises third transistor, the 4th transistor, the 5th transistor and the 6th transistor, wherein:
The source electrode of described 5th transistor connects the first end of described dividing potential drop Circuit tuning, the source electrode of described 6th transistor connects the second end of described dividing potential drop Circuit tuning, the grid of described 5th transistor and the 6th transistor connects described second control voltage respectively, the drain electrode of described 5th transistor is connected with the drain electrode of described third transistor, the drain electrode of described 6th transistor is connected with the drain electrode of described 4th transistor, the grid of described third transistor and the 4th transistor connects described first control voltage respectively, the source electrode of described third transistor connects the 3rd end of described dividing potential drop Circuit tuning, the source electrode of described 4th transistor connects the 4th end of described dividing potential drop Circuit tuning.
Alternatively, be connected with preset resistance by predetermined capacitive between the output node of described first voltage and the drain electrode of third transistor, be connected with preset resistance by predetermined capacitive between the output node of described second voltage and the drain electrode of the 4th transistor.
Alternatively, described adaptive circuit also comprises: enable circuits, and described enable circuits is used for producing the 3rd control voltage according to enable voltage, and described 3rd control voltage is used for enable or closes described difference and turn single-end circuit.
Alternatively, described enable circuits comprises the 4th phase inverter, the 20 two-transistor, the 23 transistor, the 24 transistor, the 25 transistor, the 26 transistor, the 27 transistor, the 28 transistor and the 29 transistor, wherein:
Enable voltage described in the input termination of described 4th phase inverter connects, the grid of the 20 two-transistor described in the output termination of described 4th phase inverter, the grid of described 23 transistor connects described enable voltage, the source electrode ground connection respectively of described 20 two-transistor and the 23 transistor, the drain electrode of described 20 two-transistor and the 23 transistor connects the source electrode of described 24 transistor and the 25 transistor respectively, the drain electrode of described 24 transistor and the 25 transistor connects the drain electrode of described 26 transistor and the 27 transistor respectively, described 24 transistor, 25 transistor, the grid of the 26 transistor and the 27 transistor connects the 3rd respectively and detects voltage, described 3rd detection voltage is relevant to the magnitude of voltage that described difference turns the power supply of single-end circuit, the source electrode of described 26 transistor is connected with the described drain electrode of the 28 transistor and the grid of the 29 transistor respectively, the source electrode of described 27 transistor is connected with the described grid of the 28 transistor and the drain electrode of the 29 transistor respectively, described 28 transistor is connected with the operating voltage that the source electrode of the 29 transistor turns single-end circuit with described difference respectively, the drain voltage of described 29 transistor is described 3rd control voltage,
Described difference turns single-end circuit and also comprises the 9th transistor, tenth transistor and the 11 transistor, wherein: the source electrode of described 9th transistor connects the power supply that described difference turns single-end circuit, the grid of described 9th transistor connects described 3rd control voltage, the drain electrode of described 9th transistor connects the grid of the 7th transistor and the 8th transistor respectively, the grid of described tenth transistor and the 11 transistor connects described enable voltage respectively, the drain electrode of described tenth transistor connects described first voltage, the drain electrode of described 11 transistor connects described second voltage, the source electrode ground connection respectively of described tenth transistor and described 11 transistor.
Alternatively, described current mirror comprises: the 7th transistor and the 8th transistor, wherein:
The power supply that described 7th transistor and the source electrode of the 8th transistor turn single-end circuit with described difference is respectively connected, the grid of described 7th transistor and drain electrode connect the first output terminal of described current mirror respectively, the grid of described 8th transistor is connected with the grid of the 7th transistor, and the drain electrode of described 8th transistor connects the second output terminal of described current mirror.
Alternatively, described voltage detection circuit comprises the first circuit, second circuit and tertiary circuit, wherein:
Described first circuit is used for detecting voltage transitions by first and becomes the 5th voltage, and described first detection voltage is relevant to the magnitude of voltage that described difference turns the power supply of single-end circuit;
Described second circuit is used for described 5th voltage transitions to become the 6th voltage;
Described tertiary circuit is used for producing described first control voltage and the second control voltage according to described 5th voltage and the 6th voltage.
Alternatively, described first circuit comprises comparer, the first phase inverter and the second phase inverter, wherein:
The first input end of described comparer connects reference voltage, described in second input termination of described comparer, first detects voltage, the input end of output termination first phase inverter of described comparer, the input end of output termination second phase inverter of described first phase inverter, the output terminal of described second phase inverter exports described 5th voltage.
Alternatively, described second circuit comprises the 3rd phase inverter, the 14 transistor, the 15 transistor, the 16 transistor, the 17 transistor, the 18 transistor, the 19 transistor, the 20 transistor and the 21 transistor, wherein:
5th voltage described in the input termination of described 3rd phase inverter, the grid of the 14 transistor described in the output termination of described 3rd phase inverter, the grid of described 15 transistor connects described 5th voltage, the source electrode ground connection respectively of described 14 transistor and the 15 transistor, the drain electrode of described 14 transistor and the 15 transistor connects the source electrode of described 16 transistor and the 17 transistor respectively, the drain electrode of described 16 transistor and the 17 transistor connects the drain electrode of described 18 transistor and the 19 transistor respectively, described 16 transistor, 17 transistor, the grid of the 18 transistor and the 19 transistor connects the second detection voltage respectively, described second detection voltage is relevant to the magnitude of voltage that described difference turns the power supply of single-end circuit, the source electrode of described 18 transistor is connected with the described drain electrode of the 20 transistor and the grid of the 21 transistor respectively, the source electrode of described 19 transistor is connected with the described grid of the 20 transistor and the drain electrode of the 21 transistor respectively, described 20 transistor is connected with the power supply that the source electrode of the 21 transistor turns single-end circuit with described difference respectively, the voltage of the source electrode of described 19 transistor is described 6th voltage.
Alternatively, described tertiary circuit comprises the tenth two-transistor and the 13 transistor, wherein: the grid of described tenth two-transistor and the 13 transistor connects described 5th voltage and the 6th voltage respectively, the source ground of described tenth two-transistor, connected by least one preset resistance between the source electrode of described tenth two-transistor and drain electrode, the drain electrode of described tenth two-transistor is connected with the output node of described second control voltage, connected by least one preset resistance between the output node of described second control voltage and the output node of the first control voltage, connected by least one preset resistance between the output node of the first control voltage and the drain electrode of described 13 transistor, connected by least one preset resistance between the drain electrode of described 13 transistor and source electrode, the source electrode of described 13 transistor is connected with the power supply that described difference turns single-end circuit.
Embodiments of the invention additionally provide a kind of voltage signal amplifier, and described voltage signal amplifier comprises: differential amplifier circuit and described adaptive circuit, wherein:
Described adaptive circuit comprises difference and turns single-end circuit and voltage detection circuit;
First and second voltage output ends of described differential amplifier circuit export the first voltage and the second voltage respectively;
The first and second voltage input ends that described difference turns single-end circuit are connected with the first and second voltage output ends of described differential amplifier circuit respectively, are tertiary voltage for the first voltage of being exported by described differential amplifier circuit and the second voltage transitions;
The power supply that described voltage detection circuit is used for turning according to described difference single-end circuit produces the first control voltage and the second control voltage,
Described difference turns single-end circuit and comprises dividing potential drop Circuit tuning, and described dividing potential drop Circuit tuning is used for adjusting described dividing potential drop Circuit tuning according to described first control voltage and the second control voltage and turns dividing potential drop in single-end circuit in described difference.
Compared with prior art, technical scheme of the present invention has the following advantages:
In technique scheme, the power supply that described voltage detection circuit can turn single-end circuit according to described difference produces the first control voltage and the second control voltage, make described dividing potential drop Circuit tuning can adjust described dividing potential drop Circuit tuning according to described first control voltage and the second control voltage and to turn dividing potential drop in single-end circuit in described difference, that is, when the magnitude of voltage that described difference turns the power supply of single-end circuit is too high, described dividing potential drop Circuit tuning can be used for sharing a part of pressure drop, make normal work in voltage range that the described difference metal-oxide-semiconductor turned in single-end circuit can be suitable.Therefore, the range of voltage values that described difference turns the power supply of single-end circuit not only widened by described adaptive circuit and voltage signal amplifier, and extends the serviceable life that described difference turns single-end circuit.
Accompanying drawing explanation
Fig. 1 is the structural representation of an adaptive circuit in the embodiment of the present invention;
Fig. 2 is the structural representation that in the embodiment of the present invention, difference turns single-end circuit;
Fig. 3 is the structural representation of voltage detection circuit in the embodiment of the present invention;
Fig. 4 is the structural representation of the acquisition cuicuit of the first detection voltage in the embodiment of the present invention;
Fig. 5 is the structural representation of second circuit in the embodiment of the present invention;
Fig. 6 is the structural representation of tertiary circuit in the embodiment of the present invention;
Fig. 7 is the structural representation of another adaptive circuit in the embodiment of the present invention;
Fig. 8 is the structural representation of another adaptive circuit in the embodiment of the present invention;
Fig. 9 is the structural representation of enable circuits in the embodiment of the present invention;
Figure 10 is the structural representation of another adaptive circuit in the embodiment of the present invention;
Figure 11 is the structural representation of voltage signal amplifier in the embodiment of the present invention.
Embodiment
For making those skilled in the art understand better and realize the present invention, referring to accompanying drawing, be described in detail by specific embodiment.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Fig. 1 is the structural representation of an adaptive circuit in the embodiment of the present invention.
Please refer to Fig. 1, described adaptive circuit comprises: difference turns single-end circuit 200, voltage detection circuit 300.
Particularly, the first and second voltage input ends that described difference turns single-end circuit 200 are connected with the first voltage V1 and the second voltage V2 respectively, described first voltage V1 and the second voltage V2 can be converted to tertiary voltage Vout.
The power supply that described voltage detection circuit 300 can turn single-end circuit 200 according to described difference produces the first control voltage VBH and the second control voltage VBL.
It should be noted that, described difference turns single-end circuit 200 and comprises dividing potential drop Circuit tuning 210, and described dividing potential drop Circuit tuning 210 can adjust described dividing potential drop Circuit tuning 210 according to described first control voltage VBH and the second control voltage VBL and turn dividing potential drop in single-end circuit 200 in described difference.
Do not limit at embodiments of the invention the concrete structure that described difference turns single-end circuit 200, only require and described difference turn single-end circuit 200 to possess the first voltage and the second voltage transitions be the function of tertiary voltage, its concrete structure can have diversity.
Fig. 2 is the structural representation that in the embodiment of the present invention, difference turns single-end circuit.
For the purpose of simplifying the description, be described in detail turning the function of single-end circuit to described dividing potential drop Circuit tuning 210 for the difference in Fig. 2 below.
In an embodiment of the present invention, described difference turns single-end circuit 200 and can comprise current mirroring circuit 220, described dividing potential drop Circuit tuning 210 and first crystal M1 and transistor seconds M2.
Wherein, the power vd D that described current mirror 200 and described difference turn single-end circuit 200 is connected.Particularly, described current mirror comprises: the 7th transistor M7 and the 8th transistor M8, wherein, described 7th transistor M7 turns single-end circuit 200 respectively with the source electrode of the 8th transistor M8 power vd D with described difference is connected, the grid of described 7th transistor M7 and drain electrode connect the first output terminal of described current mirror 220 respectively, the grid of described 8th transistor M8 is connected with the grid of the 7th transistor M7, and the drain electrode of described 8th transistor M8 connects the second output terminal of described current mirror 220.
Described dividing potential drop Circuit tuning 210 comprises first end s1, the second end s2, the 3rd end s3 and the 4th end s4, the first end s1 of described dividing potential drop Circuit tuning 210 is connected with the first output terminal of described current mirror 220, second end s2 of described dividing potential drop Circuit tuning 210 is connected with the second output terminal of described current mirror 220,3rd end s3 of described dividing potential drop Circuit tuning 210 is connected with the drain electrode of the first transistor M1, and the 4th end s4 of described dividing potential drop Circuit tuning 210 is connected with the drain electrode of transistor seconds M2.
The source electrode of described the first transistor M1 and the source electrode of described transistor seconds M2 ground connection respectively, the grid of described the first transistor M1 and the grid of described transistor seconds M2 meet described first voltage V1 and the second voltage V2 respectively.
It should be noted that, if described difference turns single-end circuit 200 do not comprise described dividing potential drop Circuit tuning 210, but only comprise described current mirroring circuit 220 and described the first transistor M1 and transistor seconds M2, that is, if the drain electrode of the direct and described the first transistor M1 of the first output terminal of described current mirror 220, the drain electrode of the direct and described transistor seconds M2 of the second output terminal of described current mirror 220, and when the magnitude of voltage that at this moment described difference turns the power supply of single-end circuit 200 continues too high, such as the magnitude of voltage of described power vd D is 2.8V, so described the first transistor M1, transistor seconds M2, 7th transistor M7 and the 8th transistor M8 may be breakdown.
Therefore, in order to the transistor allowing described difference turn in single-end circuit 200 can normally work, can turn in single-end circuit 200 in described difference and comprise described dividing potential drop Circuit tuning 210, utilize described dividing potential drop Circuit tuning 210 to adjust the dividing potential drop between the second end s2 of dividing potential drop between the first end s1 of described dividing potential drop Circuit tuning 210 and the 3rd end s3 and described dividing potential drop Circuit tuning 210 and the 4th end s4 according to described first control voltage V1 and the second control voltage V2.
In an embodiment of the present invention, described dividing potential drop Circuit tuning 210 can comprise third transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6.
Particularly, the source electrode of described 5th transistor M5 meets the first end s1 of described dividing potential drop Circuit tuning 210, the source electrode of described 6th transistor M6 meets the second end s2 of described dividing potential drop Circuit tuning 210, the grid of described 5th transistor M5 and the 6th transistor M6 meets described second control voltage VBL respectively, the drain electrode of described 5th transistor M5 is connected with the drain electrode of described third transistor M3, the drain electrode of described 6th transistor M6 is connected with the drain electrode of described 4th transistor M4, the grid of described third transistor M3 and the 4th transistor M4 meets described first control voltage VBH respectively, the source electrode of described third transistor M3 meets the 3rd end s3 of described dividing potential drop Circuit tuning 210, the source electrode of described 4th transistor M4 meets the 4th end s4 of described dividing potential drop Circuit tuning 210.
It should be noted that, the circuit structure of described dividing potential drop Circuit tuning 210 is not limited to adopt the structure in Fig. 2, also can adopt other structures, only need described dividing potential drop Circuit tuning 210 can adjust dividing potential drop between the second end s2 of dividing potential drop between the first end s1 of described dividing potential drop Circuit tuning 210 and the 3rd end s3 and described dividing potential drop Circuit tuning 210 and the 4th end s4 according to described first control voltage V1 and the second control voltage V2.
By for the dividing potential drop Circuit tuning 210 in Fig. 2, dividing potential drop adjustment operation is described in detail below.
In fig. 2, when the magnitude of voltage of described power vd D is 2.8V, described first control voltage VBH is 1.75V, described second control voltage VBL is 1.05V, third transistor M3 in described dividing potential drop Circuit tuning 210, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6 difference can not only turn single-end circuit 200 described in conducting, and isolation work can be played to high voltage (VDD), all crystals pipe that described difference is turned in single-end circuit 200 can normally work.
Similarly, when the magnitude of voltage of described power vd D is 2.5V, described first control voltage VBH is 1.56V, described second control voltage VBL is 0.94V, third transistor M3 in described dividing potential drop Circuit tuning 210, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6 difference can not only turn single-end circuit 200 described in conducting, and isolation work can be played to high voltage (VDD), all crystals pipe that described difference is turned in single-end circuit 200 can normally work.
And when the magnitude of voltage of described power vd D is 1.8V, described first control voltage VBH is 1.18V, described second control voltage VBL is 0V, and the third transistor M3 in described dividing potential drop Circuit tuning 210, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6 are only equivalent to MOS switch and turn single-end circuit 200 with difference described in conducting.
Found by above-mentioned analysis, the generation of described first control voltage VBH and the second control voltage VBL plays a key effect for the dividing potential drop corrective action of described dividing potential drop Circuit tuning 210, is described in detail to the structure of the described voltage detection circuit 300 producing described first control voltage VBH and the second control voltage VBL below in conjunction with Fig. 3 to Fig. 6.
Fig. 3 is the structural representation of voltage detection circuit in the embodiment of the present invention.
Please refer to Fig. 3, described voltage detection circuit 300 comprises the first circuit 310, second circuit 320 and tertiary circuit 330.
Wherein, described first circuit 310 can detect voltage Vc1 by first and convert the 5th voltage V5 to, described second circuit 320 can convert described 5th voltage V5 to the 6th voltage V6, and described tertiary circuit 330 can produce described first control voltage VBH and the second control voltage VBL according to described 5th voltage V5 and the 6th voltage V6.
In an embodiment of the present invention, described first detection voltage Vc1 is relevant to the magnitude of voltage VDD that described difference turns the power supply of single-end circuit 200.Described first detects voltage Vc1 can be obtained by the circuit structure in Fig. 4.
Particularly, please refer to Fig. 4, Fig. 4 is the structural representation of the acquisition cuicuit of the first detection voltage in the embodiment of the present invention.Connect multiple preset resistance (such as between the ground turning the magnitude of voltage VDD of the power supply of single-end circuit 200 in described difference, R3 to R8), then obtain described first by the dividing potential drop of part preset resistance (R7 to R8) in described multiple preset resistance and detect voltage Vc1.
Please continue to refer to Fig. 3, described first circuit 310 comprises comparer 311, first phase inverter 312 and the second phase inverter 313, wherein, the first input end of described comparer 311 connects reference voltage Vref, described reference voltage can be arranged, such as be set to 0.72V, described in second input termination of described comparer 311, first detects voltage Vc1, the input end of output termination first phase inverter 312 of described comparer 311, the input end of output termination second phase inverter 312 of described first phase inverter 312, the output terminal of described second phase inverter 312 exports described 5th voltage V5.
Fig. 5 is the structural representation of second circuit in the embodiment of the present invention.
Please refer to Fig. 5, described second circuit 320 comprises the 3rd phase inverter the 321, the 14 transistor M14, the 15 transistor M15, the 16 transistor M16, the 17 transistor M17, the 18 transistor M18, the 19 transistor M19, the 20 transistor M20 and the 21 transistor M21.
Particularly, 5th voltage V5 described in the input termination of described 3rd phase inverter 210, the grid of the 14 transistor M14 described in the output termination of described 3rd phase inverter, the grid of described 15 transistor M15 connects described 5th voltage, the source electrode ground connection VSS respectively of described 14 transistor M14 and the 15 transistor M15, the drain electrode of described 14 transistor M14 and the 15 transistor M15 connects the source electrode of described 16 transistor M16 and the 17 transistor M17 respectively, the drain electrode of described 16 transistor M16 and the 17 transistor M17 connects the drain electrode of described 18 transistor M18 and the 19 transistor M19 respectively, described 16 transistor M16,17 transistor M17, the grid of the 18 transistor M18 and the 19 transistor M19 meets the second detection voltage Vc2 respectively, described second detection voltage Vc2 is relevant to the magnitude of voltage that described difference turns the power vd D of single-end circuit 200 (can be obtained according to VDD, the acquisition methods that its acquisition methods and described first detects voltage Vc1 is similar), the source electrode of described 18 transistor M18 is connected with the described drain electrode of the 20 transistor M20 and the grid of the 21 transistor M21 respectively, the source electrode of described 19 transistor M19 is connected with the described grid of the 20 transistor M20 and the drain electrode of the 21 transistor M21 respectively, described 20 transistor M20 turns single-end circuit 200 respectively with the source electrode of the 21 transistor M21 power vd D with described difference is connected, the voltage of the source electrode of described 19 transistor M19 is described 6th voltage V6.
Fig. 6 is the structural representation of tertiary circuit in the embodiment of the present invention.
Please refer to Fig. 6, described tertiary circuit 320 comprises the tenth two-transistor M12 and the 13 transistor M13.Described tertiary circuit 320 can control the break-make of described tenth two-transistor M12 and the 13 transistor M13 according to described 5th voltage V5 and the 6th voltage V6, thus produces the first different control voltage VBH and the second control voltage VBL.
Particularly, the grid of described tenth two-transistor M12 and the 13 transistor M13 meets described 5th voltage V5 and the 6th voltage V6 respectively, the source ground of described tenth two-transistor M12, between the source electrode of described tenth two-transistor M12 and drain electrode by least one preset resistance (such as, R14, R15 with R16) be connected, the drain electrode of described tenth two-transistor M12 is connected with the output node of described second control voltage VBL, between the output node of described second control voltage VBL and the output node of the first control voltage VBH by least one preset resistance (such as, R12 with R13) be connected, connected (such as by least one preset resistance between the output node of the first control voltage VBH and the drain electrode of described 13 transistor M13, R11), connected (such as by least one preset resistance between the drain electrode of described 13 transistor M13 and source electrode, R9 and R10), the power vd D that source electrode and the described difference of described 13 transistor M13 turn single-end circuit 200 is connected.
It should be noted that, the structure of described voltage detection circuit 300 is not limited to the embodiment in Fig. 3 to Fig. 6, also other circuit structures can be adopted, only need it to meet, turn the power vd D of single-end circuit 200 according to described difference to generation described first control voltage VBH and the second control voltage VBL.
The principle of work of the described voltage detection circuit 300 adopting circuit result in Fig. 3 to Fig. 6 will be illustrated below.
Such as, when the magnitude of voltage that described difference turns the power supply of single-end circuit 200 is 1.8V, the input Vref of described first circuit 310 is greater than Vc1, described first circuit exports the 5th voltage V5 and equals 1.8V, described second circuit 320 converts the 5th voltage V5 to the 6th voltage V6,6th voltage V6 equals 1V, now, when V5 equals 1.8V and the 6th voltage V6 equals 1V, tenth two-transistor M12 and the 13 transistor M13 conducting, export the first control voltage VBH and equal 1.18V, the second control voltage equals VBL and equals 0V.
When the magnitude of voltage that described difference turns the power supply of single-end circuit 200 is 2.5V, the input Vref of described first circuit 310 is less than Vc1, described first circuit exports the 5th voltage V5 and equals 0V, described second circuit 320 converts the 5th voltage V5 to the 6th voltage V6,6th voltage V6 equals 2.5V, now, when V5 equals 0V and the 6th voltage V6 equals 2.5V, tenth two-transistor M12 and the 13 transistor M13 turns off, export the first control voltage VBH and equal 1.56V, the second control voltage equals VBL and equals 0.94V.
When the magnitude of voltage that described difference turns the power supply of single-end circuit 200 is 2.8V, the input Vref of described first circuit 310 is less than Vc1, described first circuit exports the 5th voltage V5 and equals 0V, described second circuit 320 converts the 5th voltage V5 to the 6th voltage V6,6th voltage V6 equals 2.8V, now, when V5 equals 0V and the 6th voltage V6 equals 2.8V, tenth two-transistor M12 and the 13 transistor M13 turns off, export the first control voltage VBH and equal 1.75V, the second control voltage equals VBL and equals 1.05V.
In an embodiment of the present invention, please refer to Fig. 7, described adaptive circuit can also comprise: enable circuits 400, and described enable circuits 400 can produce the 3rd control voltage VE, described 3rd control voltage VE according to enable voltage V3 can be enable or close described difference and turn single-end circuit 200.
The 26S Proteasome Structure and Function of described enable circuits 400 is introduced below in conjunction with Fig. 8.
Please refer to Fig. 8, described enable control circuit 400 comprises the 4th phase inverter the 410, the 20 two-transistor M22, the 23 transistor M23, the 24 transistor M24, the 25 transistor M25, the 26 transistor M26, the 27 transistor M27, the 28 transistor M28 and the 29 transistor M29.
Particularly, enable voltage V3 described in the input termination of described 4th phase inverter 410 connects, the grid of the 20 two-transistor M22 described in the output termination of described 4th phase inverter 410, the grid of described 23 transistor M23 meets described enable voltage V3, the source electrode ground connection VSS respectively of described 20 two-transistor M22 and the 23 transistor M23, the drain electrode of described 20 two-transistor M22 and the 23 transistor M23 connects the source electrode of described 24 transistor M24 and the 25 transistor M25 respectively, the drain electrode of described 24 transistor M24 and the 25 transistor M25 connects the drain electrode of described 26 transistor M26 and the 27 transistor M27 respectively, described 24 transistor M24,25 transistor M25, the grid of the 26 transistor M26 and the 27 transistor M27 connects the 3rd respectively and detects voltage Vc3, described 3rd detection voltage Vc3 is relevant to the magnitude of voltage VDD that described difference turns the power supply of single-end circuit 200 (can be obtained according to VDD, the acquisition methods that its acquisition methods and described first detects voltage Vc1 is similar), the source electrode of described 26 transistor M26 is connected with the described drain electrode of the 28 transistor M28 and the grid of the 29 transistor M29 respectively, the source electrode of described 27 transistor M27 is connected with the described grid of the 28 transistor M28 and the drain electrode of the 29 transistor M29 respectively, described 28 transistor M28 is connected with the operating voltage VDD that the source electrode of the 29 transistor M29 turns single-end circuit 200 with described difference respectively, the drain voltage of described 29 transistor M29 is described 3rd control voltage VE.
It should be noted that, the circuit structure of described enable circuits 400 is not limited to the embodiment in Fig. 8, also can adopt other circuit structures, only needs to produce the 3rd control voltage VE according to enable circuits V3.
Utilize the enable circuits in Fig. 8 to difference turn single-end circuit 200 carry out enable control time, please refer to Fig. 9, described difference turns single-end circuit 200 can also comprise the 9th transistor M9, the tenth transistor M10 and the 11 transistor M10.
The source electrode of described 9th transistor M9 meets the power vd D that described difference turns single-end circuit 200, the grid of described 9th transistor M9 meets described 3rd control voltage VE, the drain electrode of described 9th transistor M9 meets the grid M8 of described 7th transistor M7 and the 8th transistor respectively, the grid of described tenth transistor M10 and the 11 transistor M11 meets described enable voltage V3 respectively, the drain electrode of described tenth transistor M10 meets described first voltage V1, the drain electrode of described 11 transistor M11 meets described second voltage V2, the source electrode ground connection respectively of described tenth transistor M10 and described 11 transistor M10.
Below the enable control procedure utilizing the difference in the enable circuits 400 couples of Fig. 9 in Fig. 8 to turn single-end circuit 200 of illustrating is described.
Such as, when enable voltage V3 equals 0V, described enable circuits output VE is that the 9th transistor M9, the tenth transistor M10 and the 11 transistor M11 in 2.8V, Fig. 9 turns off, and described difference turns single-end circuit 200 and normally works.
And when enable voltage V3 equals 1.8V, it is 1.6V that described enable circuits exports VE, the 9th transistor M9 conducting in Fig. 9, is pulled to 2.8V by the grid of described 7th transistor M7 and the 8th transistor M8, close described difference and turn single-end circuit 200.
In an embodiment of the present invention, please refer to Figure 10, in order to put forward high-frequency stability, can be connected with preset resistance (R1) by predetermined capacitive (C1) between the output node of described first voltage V1 and the drain electrode of third transistor M3, form loop; Equally also can be connected with preset resistance (R3) by predetermined capacitive (C2) between the output node of described second voltage V2 and the drain electrode of the 4th transistor M4, form loop.
Embodiments of the invention additionally provide a kind of voltage signal amplifier, please refer to Figure 11, and described voltage amplifier comprises: differential amplifier circuit 100 and above-mentioned adaptive circuit.Wherein, described adaptive circuit comprises described difference and turns single-end circuit 200 and described voltage detection circuit 300.
Wherein, the first and second voltage output ends of described differential amplifier circuit 100 export the first voltage V1 and the second voltage V2 respectively.
The first and second voltage input ends that described difference turns single-end circuit 200 are connected with the first and second voltage output ends of described differential amplifier circuit 100 respectively, and the first voltage V1 that described differential amplifier circuit 100 can be exported and the second voltage V2 is converted to tertiary voltage Vout.
The power supply that described voltage detection circuit 300 can turn single-end circuit 200 according to described difference produces the first control voltage VBH and the second control voltage VBH.
Described difference turns single-end circuit 200 and comprises dividing potential drop Circuit tuning 210, and described dividing potential drop Circuit tuning 210 can adjust described dividing potential drop Circuit tuning 210 according to described first control voltage VBH and the second control voltage VBH and turn dividing potential drop in single-end circuit 200 in described difference.
In above-mentioned adaptive circuit, the power supply that described voltage detection circuit 300 can turn single-end circuit 200 according to described difference produces the first control voltage VBH and the second control voltage VBL, make described dividing potential drop Circuit tuning 210 can adjust described dividing potential drop Circuit tuning 210 according to described first control voltage VBH and the second control voltage VBL and to turn dividing potential drop in single-end circuit 200 in described difference, that is, when the magnitude of voltage that described difference turns the power supply of single-end circuit 200 is too high, described dividing potential drop Circuit tuning 210 can be used for sharing a part of pressure drop, make normal work in voltage range that the described difference metal-oxide-semiconductor turned in single-end circuit 200 can be suitable.
Therefore, the range of voltage values that described difference turns the power supply of single-end circuit 200 not only widened by described adaptive circuit and voltage signal amplifier, and extends the serviceable life that described difference turns single-end circuit 200.
One of ordinary skill in the art will appreciate that all or part of step in the various methods of above-described embodiment is that the hardware that can carry out instruction relevant by program has come, this program can be stored in a computer-readable recording medium, and storage medium can comprise: ROM, RAM, disk or CD etc.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (11)
1. an adaptive circuit, is characterized in that, comprising: difference turns single-end circuit, voltage detection circuit, wherein:
The first and second voltage input ends that described difference turns single-end circuit are connected with the first voltage and the second voltage respectively, for being tertiary voltage by described first voltage and the second voltage transitions;
The power supply that described voltage detection circuit is used for turning according to described difference single-end circuit produces the first control voltage and the second control voltage,
Described difference turns single-end circuit and comprises dividing potential drop Circuit tuning, and described dividing potential drop Circuit tuning is used for adjusting described dividing potential drop Circuit tuning according to described first control voltage and the second control voltage and turns dividing potential drop in single-end circuit in described difference;
Described voltage detection circuit comprises the first circuit, second circuit and tertiary circuit, wherein:
Described first circuit is used for detecting voltage transitions by first and becomes the 5th voltage, and described first detection voltage is relevant to the magnitude of voltage that described difference turns the power supply of single-end circuit;
Described second circuit is used for described 5th voltage transitions to become the 6th voltage;
Described tertiary circuit is used for producing described first control voltage and the second control voltage according to described 5th voltage and the 6th voltage.
2. adaptive circuit as claimed in claim 1, it is characterized in that, described difference turns single-end circuit and comprises current mirroring circuit, described dividing potential drop Circuit tuning and first crystal and transistor seconds, wherein:
The power supply that described current mirror turns single-end circuit with described difference is connected;
Described dividing potential drop Circuit tuning comprises first end, second end, 3rd end and the 4th end, the first end of described dividing potential drop Circuit tuning is connected with the first output terminal of described current mirror, second end of described dividing potential drop Circuit tuning is connected with the second output terminal of described current mirror, 3rd end of described dividing potential drop Circuit tuning is connected with the drain electrode of the first transistor, 4th end of described dividing potential drop Circuit tuning is connected with the drain electrode of transistor seconds, the source electrode of described the first transistor and the source electrode of described transistor seconds ground connection respectively, the grid of described the first transistor and the grid of described transistor seconds connect described first voltage and the second voltage respectively,
Described dividing potential drop Circuit tuning is used for adjusting dividing potential drop between the second end of dividing potential drop between the first end of described dividing potential drop Circuit tuning and the 3rd end and described dividing potential drop Circuit tuning and the 4th end according to described first control voltage and the second control voltage.
3. adaptive circuit as claimed in claim 2, it is characterized in that, described dividing potential drop Circuit tuning comprises third transistor, the 4th transistor, the 5th transistor and the 6th transistor, wherein:
The source electrode of described 5th transistor connects the first end of described dividing potential drop Circuit tuning, the source electrode of described 6th transistor connects the second end of described dividing potential drop Circuit tuning, the grid of described 5th transistor and the 6th transistor connects described second control voltage respectively, the drain electrode of described 5th transistor is connected with the drain electrode of described third transistor, the drain electrode of described 6th transistor is connected with the drain electrode of described 4th transistor, the grid of described third transistor and the 4th transistor connects described first control voltage respectively, the source electrode of described third transistor connects the 3rd end of described dividing potential drop Circuit tuning, the source electrode of described 4th transistor connects the 4th end of described dividing potential drop Circuit tuning.
4. adaptive circuit as claimed in claim 3, it is characterized in that, be connected with preset resistance by predetermined capacitive between the output node of described first voltage and the drain electrode of third transistor, be connected with preset resistance by predetermined capacitive between the output node of described second voltage and the drain electrode of the 4th transistor.
5. adaptive circuit as claimed in claim 3, is characterized in that, also comprise: enable circuits, and described enable circuits is used for producing the 3rd control voltage according to enable voltage, and described 3rd control voltage is used for enable or closes described difference and turn single-end circuit.
6. adaptive circuit as claimed in claim 5, it is characterized in that, described enable circuits comprises the 4th phase inverter, the 20 two-transistor, the 23 transistor, the 24 transistor, the 25 transistor, the 26 transistor, the 27 transistor, the 28 transistor and the 29 transistor, wherein:
Enable voltage described in the input termination of described 4th phase inverter connects, the grid of the 20 two-transistor described in the output termination of described 4th phase inverter, the grid of described 23 transistor connects described enable voltage, the source electrode ground connection respectively of described 20 two-transistor and the 23 transistor, the drain electrode of described 20 two-transistor and the 23 transistor connects the source electrode of described 24 transistor and the 25 transistor respectively, the drain electrode of described 24 transistor and the 25 transistor connects the drain electrode of described 26 transistor and the 27 transistor respectively, described 24 transistor, 25 transistor, the grid of the 26 transistor and the 27 transistor connects the 3rd respectively and detects voltage, described 3rd detection voltage is relevant to the magnitude of voltage that described difference turns the power supply of single-end circuit, the source electrode of described 26 transistor is connected with the described drain electrode of the 28 transistor and the grid of the 29 transistor respectively, the source electrode of described 27 transistor is connected with the described grid of the 28 transistor and the drain electrode of the 29 transistor respectively, described 28 transistor is connected with the operating voltage that the source electrode of the 29 transistor turns single-end circuit with described difference respectively, the drain voltage of described 29 transistor is described 3rd control voltage,
Described difference turns single-end circuit and also comprises the 9th transistor, tenth transistor and the 11 transistor, wherein: the source electrode of described 9th transistor connects the power supply that described difference turns single-end circuit, the grid of described 9th transistor connects described 3rd control voltage, the drain electrode of described 9th transistor connects the grid of the 7th transistor and the 8th transistor respectively, the grid of described tenth transistor and the 11 transistor connects described enable voltage respectively, the drain electrode of described tenth transistor connects described first voltage, the drain electrode of described 11 transistor connects described second voltage, the source electrode ground connection respectively of described tenth transistor and described 11 transistor.
7. adaptive circuit as claimed in claim 2, it is characterized in that, described current mirror comprises: the 7th transistor and the 8th transistor, wherein:
The power supply that described 7th transistor and the source electrode of the 8th transistor turn single-end circuit with described difference is respectively connected, the grid of described 7th transistor and drain electrode connect the first output terminal of described current mirror respectively, the grid of described 8th transistor is connected with the grid of the 7th transistor, and the drain electrode of described 8th transistor connects the second output terminal of described current mirror.
8. adaptive circuit as claimed in claim 1, it is characterized in that, described first circuit comprises comparer, the first phase inverter and the second phase inverter, wherein:
The first input end of described comparer connects reference voltage, described in second input termination of described comparer, first detects voltage, the input end of output termination first phase inverter of described comparer, the input end of output termination second phase inverter of described first phase inverter, the output terminal of described second phase inverter exports described 5th voltage.
9. adaptive circuit as claimed in claim 1, it is characterized in that, described second circuit comprises the 3rd phase inverter, the 14 transistor, the 15 transistor, the 16 transistor, the 17 transistor, the 18 transistor, the 19 transistor, the 20 transistor and the 21 transistor, wherein:
5th voltage described in the input termination of described 3rd phase inverter, the grid of the 14 transistor described in the output termination of described 3rd phase inverter, the grid of described 15 transistor connects described 5th voltage, the source electrode ground connection respectively of described 14 transistor and the 15 transistor, the drain electrode of described 14 transistor and the 15 transistor connects the source electrode of described 16 transistor and the 17 transistor respectively, the drain electrode of described 16 transistor and the 17 transistor connects the drain electrode of described 18 transistor and the 19 transistor respectively, described 16 transistor, 17 transistor, the grid of the 18 transistor and the 19 transistor connects the second detection voltage respectively, described second detection voltage is relevant to the magnitude of voltage that described difference turns the power supply of single-end circuit, the source electrode of described 18 transistor is connected with the described drain electrode of the 20 transistor and the grid of the 21 transistor respectively, the source electrode of described 19 transistor is connected with the described grid of the 20 transistor and the drain electrode of the 21 transistor respectively, described 20 transistor is connected with the power supply that the source electrode of the 21 transistor turns single-end circuit with described difference respectively, the voltage of the source electrode of described 19 transistor is described 6th voltage.
10. adaptive circuit as claimed in claim 1, it is characterized in that, described tertiary circuit comprises the tenth two-transistor and the 13 transistor, wherein: the grid of described tenth two-transistor and the 13 transistor connects described 5th voltage and the 6th voltage respectively, the source ground of described tenth two-transistor, connected by least one preset resistance between the source electrode of described tenth two-transistor and drain electrode, the drain electrode of described tenth two-transistor is connected with the output node of described second control voltage, connected by least one preset resistance between the output node of described second control voltage and the output node of the first control voltage, connected by least one preset resistance between the output node of the first control voltage and the drain electrode of described 13 transistor, connected by least one preset resistance between the drain electrode of described 13 transistor and source electrode, the source electrode of described 13 transistor is connected with the power supply that described difference turns single-end circuit.
11. 1 kinds of voltage signal amplifiers, is characterized in that, comprising: differential amplifier circuit and the adaptive circuit described in any one of claim 1 to 10, wherein:
Described adaptive circuit comprises difference and turns single-end circuit and voltage detection circuit;
First and second voltage output ends of described differential amplifier circuit export the first voltage and the second voltage respectively;
The first and second voltage input ends that described difference turns single-end circuit are connected with the first and second voltage output ends of described differential amplifier circuit respectively, are tertiary voltage for the first voltage of being exported by described differential amplifier circuit and the second voltage transitions;
The power supply that described voltage detection circuit is used for turning according to described difference single-end circuit produces the first control voltage and the second control voltage,
Described difference turns single-end circuit and comprises dividing potential drop Circuit tuning, and described dividing potential drop Circuit tuning is used for adjusting described dividing potential drop Circuit tuning according to described first control voltage and the second control voltage and turns dividing potential drop in single-end circuit in described difference.
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| CN106849630B (en) * | 2017-03-13 | 2024-03-15 | 广东美的制冷设备有限公司 | Intelligent power module, control method thereof and air conditioner |
| CN108683167B (en) * | 2018-07-03 | 2024-04-09 | 苏州锴威特半导体股份有限公司 | Anti-surge circuit of PD equipment |
| CN112367055B (en) * | 2020-10-10 | 2024-06-28 | 广州慧智微电子股份有限公司 | Overvoltage protection circuit, device and equipment |
| CN112445745B (en) * | 2021-01-29 | 2021-05-14 | 武汉精测电子集团股份有限公司 | Device and method for long-distance signal transmission |
| CN119254156A (en) * | 2024-09-18 | 2025-01-03 | 北京士模微电子有限责任公司 | A voltage drop control circuit of an operational amplifier and an operational amplifier circuit |
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