CN104614787B - A kind of ultra broadband antireflecting film and preparation method thereof - Google Patents
A kind of ultra broadband antireflecting film and preparation method thereof Download PDFInfo
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- CN104614787B CN104614787B CN201510093499.XA CN201510093499A CN104614787B CN 104614787 B CN104614787 B CN 104614787B CN 201510093499 A CN201510093499 A CN 201510093499A CN 104614787 B CN104614787 B CN 104614787B
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- 238000002360 preparation method Methods 0.000 title description 12
- 239000010410 layer Substances 0.000 abstract description 56
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 34
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000011247 coating layer Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 69
- 229910010413 TiO 2 Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 239000005304 optical glass Substances 0.000 description 4
- 238000006213 oxygenation reaction Methods 0.000 description 4
- 238000013022 venting Methods 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 239000012788 optical film Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The present invention relates to a kind of ultra broadband antireflecting film, comprise base layer, be provided with by MgF on base layer surface
2the multi-layer film structure that rete and TiO2 rete alternately form, and the ground floor near base layer surface and the outermost layer near Air Interface are MgF
2rete, the thickness of described multi-layer film structure is 340-370nm.Present invention achieves the high-transmission rate to 400 ~ 800nm ultra wide wave band visible ray, residual reflectivity is lower than 0.2%, and coating layers is less, simplifies manufacturing process, reduces manufacturing cost.
Description
Technical field
The present invention relates to a kind of ultra broadband antireflecting film and preparation method thereof, belong to field of optical films.
Background technology
In optical system, need the reflection reducing piece surface in both cases, the first, the optical element of unprocessed mistake, due to reflection loss, the optical element transmissivity of unprocessed mistake is always lower than 100%, and such as, the transmissivity of uncoated crown glass part only has about 92%, and the transmissivity of the higher flint glass of refractive index only has about 85%, most of instrument comprises the part of multiple tandem arrangement, if piece surface not coated with antireflection film, then the total transmittance of instrument will be very low; Second, surface reflection is through multiple reflections or diffuse reflection, some light becomes parasitic light, finally arrive as plane, the contrast of picture is reduced, thus the system such as the image quality of influential system, particularly TV, process photography camera lens, all comprise multiple surface adjacent with air in a large number, if camera lens does not have antireflecting film, can not apply.
The antireflecting film of existing many types can supply to utilize, to meet most of needs in technical optics field at present.Complicated optical system and laser optics, often have special requirement to reflection preventing ability.Such as, high-power laser system requires that some element has extremely low surface reflection, is subject to unwanted reflection is destroyed to avoid sensitive element.In addition, wide-band anti-reflection coating improves image quality, as balance and operating distance, thus the over-all properties of system is strengthened.Therefore, the actual needs of production facilitates the development of antireflecting film.
Chinese patent literature CN102496633A discloses the double-layer reflection reducing coating of a kind of GaAs system solar cell, comprises at least two-layer antireflecting film, by SiN
x, MgF
2, TiO
x, Al
2o
x, SiO
2, two or more stacked formation in ZnO film; This double-layer reflection reducing coating utilizes PECVD, the technology such as EBE, and GaAs system window layer of solar battery or top battery Window layer grow SiN
x, MgF
2, TiO
x, Al
2o
x, SiO
2, the film such as ZnO, by the mode of multiple-level stack, form laminated antireflection film structure.But this patent exists following defect: (1) antireflecting film is formed by two or more optical material is stacked, add technology difficulty during Coating Materials conversion, add cost; (2) when use two kinds of optical film materials, this antireflecting film is only double-decker, theoretical according to optical thin film design, bilayer film has V-type and two kinds, W type, V-type film can only antireflection effectively in narrower spectral range, and W type film is higher at the reflectivity of centre wavelength, and centre wavelength both sides reflectivity reduces gradually, therefore, cause the average reflectance of whole wave band higher.
The present invention only utilizes two kinds of optical film materials, and adopts more than two-layer structural design, efficiently solves the problems referred to above.
Summary of the invention
For the deficiencies in the prior art, the invention discloses a kind of ultra broadband antireflecting film;
The invention also discloses the preparation method of above-mentioned antireflecting film;
Ultra broadband antireflecting film of the present invention achieves 400 ~ 800nm wave band high permeability, and residual reflectivity is lower than 0.2%.
Technical scheme of the present invention is:
A kind of ultra broadband antireflecting film, comprises base layer, is provided with by MgF on described base layer surface
2rete and TiO
2the multi-layer film structure that rete alternately forms, and the ground floor near described base layer surface and the outermost layer near Air Interface are MgF
2rete, the thickness of described multi-layer film structure is 340-370nm.
Described antireflecting film all has very high transmitance to 400 ~ 800nm wave band, and average residual reflectivity is lower than 0.2%.
Preferred according to the present invention, described multi-layer film structure is nine film structure, and the thickness of each layer is all not identical.
Preferred according to the present invention, be followed successively by from base layer to the outermost layer near Air Interface: thickness is the MgF of 24-25nm
2rete, thickness is the TiO of 13-14nm
2rete, thickness is the MgF of 45-46nm
2rete, thickness is the TiO of 30-31nm
2rete, thickness is the MgF of 17-18nm
2rete, thickness is the TiO of 80-81nm
2rete, thickness is the MgF of 16-17nm
2rete, thickness is the TiO of 25-26nm
2rete, thickness is the MgF of 105-106nm
2rete.
Preferred according to the present invention, be followed successively by from base layer to the outermost layer near Air Interface: thickness is the MgF of 24.80nm
2rete, thickness is the TiO of 13.20nm
2rete, thickness is the MgF of 45.55nm
2rete, thickness is the TiO of 30.52nm
2rete, thickness is the MgF of 17.16nm
2rete, thickness is the TiO of 80.50nm
2rete, thickness is the MgF of 16.74nm
2rete, thickness is the TiO of 25.28nm
2rete, thickness is the MgF of 105.46nm
2rete.
Preferred according to the present invention, described base layer is optical glass.
Preferred according to the present invention, described optical glass is K9 glass.
The preparation method of above-mentioned antireflecting film, concrete steps comprise:
(1) clean base layer, the base layer after cleaning is placed in vacuum chamber;
(2) 1.0 × 10 are evacuated to
-3-1.5 × 10
-3pa, is warming up to 180-230 DEG C, oxygenation to 2.5 × 10
-2-3.3 × 10
-2pa;
(3) after pressure in vacuum tank is stable, plated film is started: be coated with ground floor MgF
2rete, plated film time and speed control control according to desired thickness;
(4) according to different coating materials, alternately multilayer MgF is coated with
2rete and TiO
2rete;
(5) after plated film, at condition of high vacuum degree borehole cooling to 25-50 DEG C, take out after venting, obtaining final product, described condition of high vacuum degree refers to 1.0 × 10
-3-1.5 × 10
-3pa.
Preferred according to the present invention, in step (1), the mode of cleaning base layer is Ultrasonic Cleaning.
Preferred according to the present invention, in step (4), to MgF
2rete and TiO
2rete carries out pre-melt process, MgF
2the speed control of the pre-melt process of rete is
tiO
2the pre-melt process of rete
alternately be coated with multilayer MgF
2rete and TiO
2rete.
Beneficial effect of the present invention is:
1, antireflecting film of the present invention is only formed by two kinds of optical materials are stacked, simplifies technology difficulty during Coating Materials conversion, reduces manufacturing cost;
2, antireflecting film of the present invention achieves the high-transmission rate to 400 ~ 800nm ultra wide wave band visible ray, and residual reflectivity is lower than 0.2%, and coating layers is less, simplifies manufacturing process, reduces manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of antireflecting film of the present invention;
In Fig. 1, the multi-layer film structure of described antireflecting film is nine film structure, and the bottom of described antireflecting film is basalis, is alternately provided with MgF on described base layer surface
2rete and TiO
2rete;
Fig. 2 is the reflectance curve of antireflecting film of the present invention;
In Fig. 2, to 400 ~ 800nm ultra wide wave band visible ray, average reflectance is lower than 0.2%.
Embodiment
Below in conjunction with Figure of description and embodiment, the present invention is further qualified, but is not limited thereto.
Embodiment 1
A kind of ultra broadband antireflecting film, comprises base layer, is provided with by MgF on described base layer surface
2rete and TiO
2the multi-layer film structure that rete alternately forms, and the ground floor near described base layer surface and the outermost layer near Air Interface are MgF
2rete, the thickness of described multi-layer film structure is 340nm.
Described antireflecting film all has very high transmitance to 400 ~ 800nm wave band, and average residual reflectivity is lower than 0.2%.
Embodiment 2
Antireflecting film according to embodiment 1, its difference is, the thickness of described multi-layer film structure is 370nm.
Embodiment 3
Antireflecting film according to embodiment 1, its difference is, the thickness of described multi-layer film structure is 355nm.
Embodiment 4
According to the arbitrary described antireflecting film of embodiment 1-3, its difference is, described multi-layer film structure is nine film structure, and the thickness of each layer is all not identical, as shown in Figure 1.
Embodiment 5
Antireflecting film according to embodiment 4, its difference is, is followed successively by: thickness is the MgF of 24nm from base layer to the outermost layer near Air Interface
2rete, thickness is the TiO2 rete of 13nm, and thickness is the MgF of 45nm
2rete, thickness is the TiO2 rete of 30nm, and thickness is the MgF of 17nm
2rete, thickness is the TiO2 rete of 80nm, and thickness is the MgF of 16nm
2rete, thickness is the TiO2 rete of 25nm, and thickness is the MgF of 105nm
2rete.
Embodiment 6
Antireflecting film according to embodiment 4, its difference is, is followed successively by: thickness is the MgF of 25nm from base layer to the outermost layer near Air Interface
2rete, thickness is the TiO2 rete of 14nm, and thickness is the MgF of 46nm
2rete, thickness is the TiO2 rete of 31nm, and thickness is the MgF of 18nm
2rete, thickness is the TiO2 rete of 81nm, and thickness is the MgF of 17nm
2rete, thickness is the TiO2 rete of 26nm, and thickness is the MgF of 106nm
2rete.
Embodiment 7
Antireflecting film according to embodiment 4, its difference is, is followed successively by: thickness is the MgF of 24.5nm from base layer to the outermost layer near Air Interface
2rete, thickness is the TiO2 rete of 13.5nm, and thickness is the MgF of 45.5nm
2rete, thickness is the TiO2 rete of 30.5nm, and thickness is the MgF of 17.5nm
2rete, thickness is the TiO2 rete of 80.5nm, and thickness is the MgF of 16.5nm
2rete, thickness is the TiO2 rete of 25.5nm, and thickness is the MgF of 105.5nm
2rete.
Embodiment 8
Antireflecting film according to embodiment 4, its difference is, is followed successively by: thickness is the MgF of 24.80nm from base layer to the outermost layer near Air Interface
2rete, thickness is the TiO2 rete of 13.20nm, and thickness is the MgF of 45.55nm
2rete, thickness is the TiO2 rete of 30.52nm, and thickness is the MgF of 17.16nm
2rete, thickness is the TiO2 rete of 80.50nm, and thickness is the MgF of 16.74nm
2rete, thickness is the TiO2 rete of 25.28nm, and thickness is the MgF of 105.46nm
2rete.
Embodiment 9
According to the arbitrary described antireflecting film of embodiment 1-8, its difference is, described base layer is optical glass.
Embodiment 10
Antireflecting film according to embodiment 9, its difference is, described optical glass is K9 glass.
Embodiment 11
According to the preparation method of the arbitrary described antireflecting film of embodiment 1-10, concrete steps comprise:
(1) clean base layer, the base layer after cleaning is placed in vacuum chamber;
(2) 1.0 × 10 are evacuated to
-3pa, is warming up to 180 DEG C, oxygenation to 2.5 × 10
-2pa;
(3) after pressure in vacuum tank is stable, plated film is started: be coated with ground floor MgF
2rete, plated film time and speed control control according to desired thickness;
(4) according to different coating materials, alternately multilayer MgF is coated with
2rete and TiO
2rete;
(5) after plated film, at condition of high vacuum degree borehole cooling to 25 DEG C, take out after venting, obtaining final product, described condition of high vacuum degree refers to 1.0 × 10
-3pa.
Embodiment 12
The preparation method of antireflecting film according to embodiment 11, its difference is, concrete steps comprise:
(1) clean base layer, the base layer after cleaning is placed in vacuum chamber;
(2) 1.5 × 10 are evacuated to
-3pa, is warming up to 230 DEG C, oxygenation to 3.3 × 10
-2pa;
(3) after pressure in vacuum tank is stable, plated film is started: be coated with ground floor MgF
2rete, plated film time and speed control control according to desired thickness;
(4) according to different coating materials, alternately multilayer MgF is coated with
2rete and TiO
2rete;
(5) after plated film, at condition of high vacuum degree borehole cooling to 50 DEG C, take out after venting, obtaining final product, described condition of high vacuum degree refers to 1.5 × 10
-3pa.
Embodiment 13
The preparation method of antireflecting film according to embodiment 11, its difference is, concrete steps comprise:
(1) clean base layer, the base layer after cleaning is placed in vacuum chamber;
(2) 1.2 × 10 are evacuated to
-3pa, is warming up to 200 DEG C, oxygenation to 3.0 × 10
-2pa;
(3) after pressure in vacuum tank is stable, plated film is started: be coated with ground floor MgF
2rete, plated film time and speed control control according to desired thickness;
(4) according to different coating materials, alternately multilayer MgF is coated with
2rete and TiO
2rete;
(5) after plated film, at condition of high vacuum degree borehole cooling to 35 DEG C, take out after venting, obtaining final product, described condition of high vacuum degree refers to 1.2 × 10
-3pa.
Embodiment 14
According to the preparation method of the arbitrary described antireflecting film of embodiment 11-13, its difference is, in step (1), the mode of cleaning base layer is Ultrasonic Cleaning.
Embodiment 15
According to the preparation method of the arbitrary described antireflecting film of embodiment 11-13, its difference is, in step (4), to MgF
2rete and TiO
2rete carries out pre-melt process, MgF
2the speed control of the pre-melt process of rete is
tiO
2the pre-melt process of rete
alternately be coated with multilayer MgF
2rete and TiO
2rete.
Embodiment 16
The preparation method of antireflecting film according to embodiment 15, its difference is, in step (4), to MgF
2rete and TiO
2rete carries out pre-melt process, MgF
2the speed control of the pre-melt process of rete is
tiO
2the pre-melt process of rete
alternately be coated with multilayer MgF
2rete and TiO
2rete.
Embodiment 17
The preparation method of antireflecting film according to embodiment 15, its difference is, in step (4), to MgF
2rete and TiO
2rete carries out pre-melt process, MgF
2the speed control of the pre-melt process of rete is
tiO
2the pre-melt process of rete
alternately be coated with multilayer MgF
2rete and TiO
2rete.
Claims (8)
1. a preparation method for ultra broadband antireflecting film, is characterized in that, comprises base layer, is provided with by MgF on described base layer surface
2rete and TiO
2the multi-layer film structure that rete alternately forms, and the ground floor near described base layer surface and the outermost layer near Air Interface are MgF
2rete, the thickness of described multi-layer film structure is 340-370nm, and concrete steps comprise:
(1) clean base layer, the base layer after cleaning is placed in vacuum chamber;
(2) 1.0 × 10 are evacuated to
-3-1.5 × 10
-3pa, is warming up to 180-230 DEG C, oxygenation to 2.5 × 10
-2-3.3 × 10
-2pa;
(3) after pressure in vacuum tank is stable, plated film is started: be coated with ground floor MgF
2rete, plated film time and speed control control according to desired thickness;
(4) according to different coating materials, alternately multilayer MgF is coated with
2rete and TiO
2rete;
(5) after plated film, at condition of high vacuum degree borehole cooling to 25-50 DEG C, take out after venting, obtaining final product, described condition of high vacuum degree refers to 1.0 × 10
-3-1.5 × 10
-3pa.
2. the preparation method of a kind of ultra broadband antireflecting film according to claim 1, is characterized in that, described multi-layer film structure is nine film structure, and the thickness of each layer is all not identical.
3. the preparation method of a kind of ultra broadband antireflecting film according to claim 2, is characterized in that, is followed successively by: thickness is the MgF of 24-25nm from base layer to the outermost layer near Air Interface
2rete, thickness is the TiO of 13-14nm
2rete, thickness is the MgF of 45-46nm
2rete, thickness is the TiO of 30-31nm
2rete, thickness is the MgF of 17-18nm
2rete, thickness is the TiO of 80-81nm
2rete, thickness is the MgF of 16-17nm
2rete, thickness is the TiO of 25-26nm
2rete, thickness is the MgF of 105-106nm
2rete.
4. the preparation method of a kind of ultra broadband antireflecting film according to claim 3, is characterized in that, is followed successively by: thickness is the MgF of 24.80nm from base layer to the outermost layer near Air Interface
2rete, thickness is the TiO of 13.20nm
2rete, thickness is the MgF of 45.55nm
2rete, thickness is the TiO of 30.52nm
2rete, thickness is the MgF of 17.16nm
2rete, thickness is the TiO of 80.50nm
2rete, thickness is the MgF of 16.74nm
2rete, thickness is the TiO of 25.28nm
2rete, thickness is the MgF of 105.46nm
2rete.
5., according to the preparation method of the arbitrary described a kind of ultra broadband antireflecting film of claim 1-4, it is characterized in that, described base layer is optical glass.
6. the preparation method of a kind of ultra broadband antireflecting film according to claim 5, is characterized in that, described optical glass is K9 glass.
7. the preparation method of a kind of ultra broadband antireflecting film according to claim 1, is characterized in that, in step (1), the mode of cleaning base layer is Ultrasonic Cleaning.
8. the preparation method of a kind of ultra broadband antireflecting film according to claim 1, is characterized in that, to MgF
2rete and TiO
2rete carries out pre-melt process, MgF
2the speed control of the pre-melt process of rete is 2.0-3.0/s, TiO
22.5-3.5/the s of the pre-melt process of rete, is alternately coated with multilayer MgF
2rete and TiO
2rete.
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| CN201510093499.XA CN104614787B (en) | 2015-03-02 | 2015-03-02 | A kind of ultra broadband antireflecting film and preparation method thereof |
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| CN106291781A (en) * | 2016-08-30 | 2017-01-04 | 东兴华鸿光学科技有限公司 | Optical glass anti-reflection film |
| CN113502451B (en) * | 2021-06-18 | 2022-10-25 | 华南理工大学 | An anti-reflection film for GaAs solar cells based on magnetron sputtering and its preparation method and application |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202710767U (en) * | 2011-12-06 | 2013-01-30 | 凤凰光学(广东)有限公司 | A kind of ultra-broadband anti-reflection coating lens |
| CN204028389U (en) * | 2014-08-27 | 2014-12-17 | 南京施密特光学仪器有限公司 | A kind of automatically cleaning ultra-wideband antireflective film glass |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007171735A (en) * | 2005-12-26 | 2007-07-05 | Epson Toyocom Corp | Broadband antireflection coating |
| CN101393276B (en) * | 2007-09-21 | 2010-06-16 | 鸿富锦精密工业（深圳）有限公司 | Wide-band antireflective film and optical element with the wide-band antireflective film |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202710767U (en) * | 2011-12-06 | 2013-01-30 | 凤凰光学(广东)有限公司 | A kind of ultra-broadband anti-reflection coating lens |
| CN204028389U (en) * | 2014-08-27 | 2014-12-17 | 南京施密特光学仪器有限公司 | A kind of automatically cleaning ultra-wideband antireflective film glass |
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