CN104576856A - Polycompound semiconductor high-efficiency light emitting module with doped multi-layered quantum wells - Google Patents

Abstract

The invention provides a high-efficiency light-emitting component with doped multilayer quantum well multi-component compound semiconductor, including an active region, the active region includes a doped multi-layer quantum well multi-component compound semiconductor structure, and the multi-layer The quantum well multi-component compound semiconductor structure has at least one quantum well layer, in which all or part of the barrier layer is doped, and the well layer is not doped; the multi-component compound is aluminum gallium indium phosphide. The inventive structure has better luminance output and lower voltage at large chip sizes. In high ambient temperature or high temperature state, the wavelength red shift and brightness attenuation caused by the material itself are reduced.

Description

Doped multi-layer quantum well multi-component compound semiconductor high-efficiency light-emitting component

technical field

The invention relates to the technical field of semiconductor light-emitting components, in particular to a high-efficiency light-emitting component with doped multi-layer quantum well multi-component compound semiconductors.

Background technique

Semiconductor light-emitting diode light sources have long life, low power consumption, and good reliability. They have been widely recognized in many fields of production and life, and have a wide range of uses. At present, the quantum well structure of light-emitting diodes is mainly the structural design of multiple quantum wells, and the quantum wells will cause wavelength red shift and brightness attenuation due to the material itself in a high-temperature environment, which limits the scope of application of the diode. To expand the scope of application of diodes, it is necessary to develop a semiconductor light-emitting component that can maintain high efficiency at high temperatures.

Contents of the invention

The problem to be solved by the present invention is a high-efficiency light-emitting component with doped multi-layer quantum well multi-component compound semiconductor, which reduces the problems of brightness attenuation and wavelength change when operating at high temperature.

In order to solve the above technical problems, the technical solution adopted by the present invention is: a high-efficiency light-emitting component with doped multi-layer quantum well multi-component compound semiconductors, including an active region, which includes a doped multi-layer quantum well Well multi-component compound semiconductor structure, and the multi-layer quantum well multi-component compound semiconductor structure has at least one quantum well layer, wherein all or part of the barrier layer is doped, and the well layer is not doped; the multi-component compound is aluminum gallium indium phosphorus , aluminum indium phosphide or gallium indium phosphide.

Preferably, the concentration of the doped barrier layer is 8×1016-2×1017 atoms/cm, the thickness of the well layer is 120-170 angstroms, the thickness of the barrier layer is 140-190 angstroms, and the doping form is P-type doping or N-type doping.

Preferably, the doping element of the P-type doping is Mg or Zn, and the doping element of the N-type doping is Si or Te.

Preferably, the barrier layer close to the N-type confinement layer or the P-type confinement layer or the barrier layer in the center of the active region is doped, and the total doping logarithm≦1/3 of the total quantum well logarithm.

Preferably, the part of the barrier layer located in the middle region is doped, and the doping thickness is 1/2˜1/3 of the thickness of the barrier layer.

The advantages and positive effects of the present invention are: the structure of the present invention has better luminance output and lower voltage on a large chip size. In high ambient temperature or high temperature state, the wavelength red shift and brightness attenuation caused by the material itself are reduced.

Description of drawings

Fig. 1 is the schematic diagram of the multilayer quantum well structure of embodiment one among the present invention;

Fig. 2 is the schematic diagram of the multilayer quantum well structure of embodiment two in the present invention;

Fig. 3 is the schematic diagram of the multilayer quantum well structure of embodiment three in the present invention;

Fig. 4 is the schematic diagram of the multilayer quantum well structure of embodiment four in the present invention;

5 is a schematic diagram of a multilayer quantum well structure with undoped barrier layers;

6 is a schematic diagram of a barrier layer structure doped in the middle region;

In the figure: 100, active region; 140, well layer; 150, doped barrier layer; 160, non-doped barrier layer; 170, P-type confinement layer; 180, N-type confinement layer; 190, doped district.

Detailed ways

Embodiment one

As shown in FIG. 1, the high-efficiency light-emitting component with doped multilayer quantum well multiple compound semiconductors includes an active region 100, and the active region 100 includes a doped multilayer quantum well multiple compound semiconductor structure, The multi-component compound is aluminum gallium indium phosphide, and the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers; the material of the barrier layer is (Al _0.7 Ga _0.3 )InP, and the material of the well layer 140 is (Al _0.12 Ga _0.88 ) InP, wherein all the barrier layers are doped, that is, there is a doped barrier layer 150, and the well layer 140 is not doped;

The doping concentration of the doped barrier layer 150 is 1.5×10 ¹⁷ atoms/cm, the thickness of the well layer 140 is 140 Å, the thickness of the barrier layer is 180 Å, and the doping form is P-type doping or N-type doping. The doping element of the P-type doping is Zn, and the doping element of the N-type doping is Te.

Embodiment two

As shown in FIG. 2, the high-efficiency light-emitting component with doped multilayer quantum well multiple compound semiconductors includes an active region 100, and the active region 100 includes a doped multilayer quantum well multiple compound semiconductor structure, The multi-component compound is aluminum gallium indium phosphide, and the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers; the material of the barrier layer is (Al _0.7 Ga _0.3 )InP, and the material of the well layer 140 is (Al _0.12 Ga _0.88 ) InP, in which part of the barrier layer is doped, and the well layer is not doped; the doped region is the barrier layer close to the N-type confinement layer, and the total number of doping pairs is 4.

The doping concentration of the doped barrier layer 150 is 1.5×10 ¹⁷ atoms/cm, and the thickness of the well layer 140 is 140 Å, and the thickness of the doped barrier layer 150 and the non-doped barrier layer 160 are both 180 Å, The doping form is P-type doping or N-type doping. The doping element of the P-type doping is Zn, and the doping element of the N-type doping is Te.

Embodiment Three

As shown in FIG. 3 , the high-efficiency light-emitting component with doped multilayer quantum well multiple compound semiconductor includes an active region 100, and the active region 100 includes a doped multilayer quantum well multiple compound semiconductor structure, The multi-component compound is aluminum gallium indium phosphide, and the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers; the material of the barrier layer is (Al _0.7 Ga _0.3 )InP, and the material of the well layer 140 is (Al _0.12 Ga _0.88 ) InP, wherein all the barrier layers are doped, and the well layer 140 is not doped; but the part of each barrier layer located in the middle region is doped, as shown in FIG. 6, and the thickness of the doped region 190 is 1/3 The thickness of the barrier layer.

The concentration of the doped barrier layer 150 is 1.5×10 ¹⁷ atoms/cm, the thickness of the well layer 140 is 140 Å, the thickness of the barrier layer is 180 Å, and the doping form is P-type doping or N-type doping. The doping element of the P-type doping is Zn, and the doping element of the N-type doping is Te.

Embodiment four

As shown in FIG. 4 , the high-efficiency light-emitting component with doped multilayer quantum well multiple compound semiconductors includes an active region 100, and the active region 100 includes a doped multilayer quantum well multiple compound semiconductor structure, The multi-component compound is aluminum gallium indium phosphide, and the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers; the material of the barrier layer is (Al _0.7 Ga _0.3 )InP, and the material of the well layer 140 is (Al _0.12 Ga _0.88 ) InP, in which part of the barrier layer is doped, and the well layer 140 is not doped; the doped region is the barrier layer close to the N-type confinement layer, and the total number of doping pairs is 4. And the part of the doped barrier layer 150 located in the middle region is doped, as shown in FIG. 6 , the thickness of the doped region 9 is 1/3 of the thickness of the barrier layer. The doping concentration of the doped barrier layer 150 is 1.5×10 ¹⁷ atoms/cm, the thickness of the well layer 140 is 140 angstroms, the thickness of the barrier layer is 180 angstroms, and the doping form is P-type doping or N-type doping . The doping element of the P-type doping is Zn, and the doping element of the N-type doping is Te.

control group

A high-efficiency light-emitting component with doped multilayer quantum well multi-component compound semiconductor, including an active region 100, the active region 100 includes a doped multi-layer quantum well multi-component compound semiconductor structure, and the multi-component compound is Aluminum gallium indium phosphide, the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers; the material of the barrier layer is (Al _0.7 Ga _0.3 ) InP, and the material of the well layer 140 is (Al _0.12 Ga _0.88 ) InP, where the barrier layer Neither the layer nor the well layer 140 is doped, and the thickness of the well layer 140 is 140 angstroms, and the thickness of the barrier layer is 180 angstroms.

Taking the multilayer quantum well semiconductor light-emitting components with Embodiment 1 to Embodiment 4 and the control group for detection, it can be concluded that:

a. It can be seen that the structure of the present invention has a better brightness output than the structure of the control group at a large size of 42mil, which is about 30% higher, and the voltage is lower by 0.03V;

b. At a small size of 12 mil, it can be seen that the brightness attenuation of the structure of the present invention is 10% less than that of the control group at high ambient temperature, and the wavelength red shift is 1.2 nanometers less than that of the control group.

The embodiments of the present invention have been described in detail above, but the content described is only a preferred embodiment of the present invention, and cannot be considered as limiting the implementation scope of the present invention. All equivalent changes and improvements made according to the scope of the present invention should still belong to the scope of this patent.

Claims (5)

1. with the multi layer quantum well multi-element compounds semiconductor high efficiency light-emitting assembly of doping, include source region, it is characterized in that: described active area comprises the multi layer quantum well multi-element compounds semiconductor structure with doping, and described multi layer quantum well multi-element compounds semiconductor structure has at least one quantum well layer, wherein all or part of barrier layer doping, well layer undopes; Described multi-element compounds is the one in phosphorus gallium aluminium indium, aluminium indium phosphorus or gallium indium phosphorus.

2. the multi layer quantum well multi-element compounds semiconductor high efficiency light-emitting assembly with doping according to claim 1, is characterized in that: the barrier layer concentration of described doping is 8 × 10 ¹⁶~ 2 × 10 ¹⁷atom/centimetre, and well layer thickness is 120 ~ 170 dusts, barrier layer thickness is 140 ~ 190 dusts, and doping form is the doping of P type or N-type doping.

3. the multi layer quantum well multi-element compounds semiconductor high efficiency light-emitting assembly with doping according to claim 2, is characterized in that: the doped chemical of described P type doping is Mg or Zn, and the doped chemical of described N-type doping is Si or Te.

4. the multi layer quantum well multi-element compounds semiconductor high efficiency light-emitting assembly with doping according to Claims 2 or 3, it is characterized in that: near N-type limiting layer or near P type limiting layer barrier layer or adulterate in the barrier layer of active area central authorities, total doping is to number≤1/3 always quantum well logarithm.

5. the multi layer quantum well multi-element compounds semiconductor high efficiency light-emitting assembly with doping according to any one of Claims 1 to 4, is characterized in that: the part doping being positioned at zone line in described barrier layer, doping thickness is the thickness of 1/2 ~ 1/3 barrier layer.