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CN104503169B - 垂直配向型液晶显示器 - Google Patents

垂直配向型液晶显示器 Download PDF

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Publication number
CN104503169B
CN104503169B CN201410677228.4A CN201410677228A CN104503169B CN 104503169 B CN104503169 B CN 104503169B CN 201410677228 A CN201410677228 A CN 201410677228A CN 104503169 B CN104503169 B CN 104503169B
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layer
liquid crystal
pixel electrode
tft substrate
crystal display
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CN104503169A (zh
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李泳锐
钟新辉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201410677228.4A priority Critical patent/CN104503169B/zh
Priority to PCT/CN2015/072502 priority patent/WO2016078239A1/zh
Priority to US14/423,691 priority patent/US20160341991A1/en
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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  • Physics & Mathematics (AREA)
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  • Chemical & Material Sciences (AREA)
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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

本发明提供一种垂直配向型液晶显示器，对现有的利用辅助配向剂进行液晶分子的垂直配向的液晶显示器进行改进，通过将钝化层(26)与像素电极(27)的接触层设置为表面特性与像素电极相接近的氧化物层；或通过设置覆盖像素电极(27)的平坦层(28)，使得溶解在液晶层(3)中的辅助配向剂(31)与TFT基板(2)表面的作用力均匀，能够解决由于像素电极(27)的图案化造成的配向力差异与亮暗线显示缺陷问题。

Description

垂直配向型液晶显示器
技术领域
本发明涉及显示技术领域，尤其涉及一种垂直配向型液晶显示器。
背景技术
液晶显示器(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
就目前主流市场上的薄膜晶体管液晶显示器(TFT-LCD)而言，可分为三大类，分别是扭曲向列/超扭曲向列(TN/STN)型、平面转换(IPS)型、及垂直配向(VA)型。其中VA型液晶显示器相对其它种类的液晶显示器具有极高的对比度，一般可达到4000-8000，在大尺寸显示，如电视等方面具有非常广的应用。
VA型液晶显示器之所以具有极高对比度是因为在不加电的暗态时，液晶分子垂直于基板表面排列，不产生任何相位差，漏光极低，暗态亮度很小，暗态亮度越低，则对比度越高。如图1所示，为了使VA型液晶显示器中的液晶分子能够垂直于基板表面排列，需要对液晶分子300进行垂直配向处理，现行最为普遍的做法是在上基板100与下基板200内表面特定区域涂布垂直配向剂，配向剂一般包含大量的化学溶剂N-甲基吡咯烷酮(NMP)以及高分子材料聚酰亚胺(Polyimide，PI)等成分，然后将基板在高温下(一般200摄氏度以上)进行长时间烘烤，使配向剂中溶剂被烤干，从而在玻璃基板表面形成PI配向层310。
为了使VA型液晶显示器获得更好的广视角特性，通常会采取多区域VA技术(multi-domain VA，MVA)，即将一个亚像素划分成多个区域，并使每个区域中的液晶在施加电压后倒伏向不同的方向，从而使各个方向看到的效果趋于平均。实现MVA技术的方法有多种，请参阅图2与图3，其中一种方法是在一侧的氧化铟锡(Indium Tin Oxide，ITO)像素电极800上形成“米字型”狭缝图案，由于特殊的ITO像素电极图形，其产生的倾斜电场可以诱导不同区域中的液晶分子300倒向不同的方向。图2所示为一种MVA型液晶显示器下基板200一侧的平面俯视示意图，其中210与220分别为扫描线与数据线。图3所示为该MVA型液晶显示器的剖面示意图，其中700为氮化硅(SiNx)材质的钝化层。该MVA型液晶显示器具有制程简单，对比度高，开口率高，响应时间快等优势。
然而，为了实现VA配向，需要在基板表面涂布垂直配向剂，进行高温烘烤制程，由于配向剂中含有大量NMP溶剂，所以形成配向层的制程是一个高能耗、极其不环保、易对人体造成危害的过程；此外，由于配向层均匀性、缺涂、不粘以及异物等问题，还会对产品良率造成损失，导致资源浪费与产品成本提高。
出于以上诸多因素考虑，需开发出不需要PI配向层的VA型液晶显示器。如图4所示，通过改变液晶配方，在液晶中加入一类辅助配向剂的物质，使液晶分子300在没有配向层的情况下即可在液晶显示装置的基板表面垂直排列。该类辅助配向剂无需其它溶剂溶解，直接溶解于液晶之中，与液晶一起使用，省去原本配向剂的涂布设备与高温烘烤设备，因无需额外溶剂，所以更加干净、环保、节能。辅助配向剂的作用机理是，辅助配向剂分子301一端与基板表面无机材料，如构成钝化层700的氮化硅及构成像素电极800的ITO等具有特别的亲和力，能够吸附在基板表面，辅助配向剂分子301另外一端与液晶分子300有极强的作用力，由此引导液晶分子300垂直于基板表面排列，最终达到如图4所示的效果。由于ITO像素电极800具有“米字型”狭缝图案的关系，像素电极所在的区域部分被ITO像素电极800覆盖，部分没有ITO像素电极800，则其表面为钝化层700即SiNx，在不使用PI配向层的情况下，依靠辅助配向剂吸附于基板表面进行配向时，由于基板表面存在ITO与SiNx的差异，导致辅助配向剂与基板表面作用力的差异，形成配向不良，施加电压之后容易导致暗线或亮线缺陷。
因此有必要对垂直配向型液晶显示器进行改进，在去除PI配向层、利用辅助配向剂实现垂直配向的情况下，解决由于MVA像素电极图案化造成的配向力差异与亮暗线显示缺陷等问题，实现均匀配向。
发明内容
本发明的目的在于提供一种垂直配向型液晶显示器，对现有的利用辅助配向剂进行液晶分子的垂直配向的液晶显示器进行改进，能够解决由于像素电极的图案化造成的配向力差异与亮暗线显示缺陷问题。
为实现上述目的，本发明提供一种垂直配向型液晶显示器，包括CF基板、与所述CF基板相对设置的TFT基板、及设于所述CF基板与TFT基板之间的液晶层；
所述TFT基板包括玻璃基板、设于所述玻璃基板上的栅极与扫描线，设于所述玻璃基板上覆盖栅极与扫描线的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的活性层、设于所述活性层与栅极绝缘层上的源/漏极、设于所述栅极绝缘层上的数据线、设于所述栅极绝缘层上覆盖源/漏极与数据线的钝化层、及设于所述钝化层上的图案化的像素电极；所述像素电极经由钝化层过孔与源/漏极接触；
所述液晶层中溶解有辅助配向剂，所述辅助配向剂使液晶分子在TFT基板的表面垂直排列；
所述钝化层至少包括一层，其中与所述像素电极的接触层为表面特性与像素电极相接近的氧化物层，从而使所述辅助配向剂与TFT基板表面的作用力均匀。
所述表面特性与像素电极相接近的氧化物层为二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层。
所述钝化层为双层或三层结构，包括一最上层与其它层，所述最上层是与所述像素电极的接触层；所述其它层为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层之中的一种或两种。
所述钝化层为单层结构，该单层的钝化层是与所述像素电极的接触层。
所述钝化层通过化学气相沉积法形成。
本发明还提供一种垂直配向型液晶显示器，包括CF基板、与所述CF基板相对设置的TFT基板、及设于所述CF基板与TFT基板之间的液晶层；
所述TFT基板包括玻璃基板、设于所述玻璃基板上的栅极与扫描线，设于所述玻璃基板上覆盖栅极与扫描线的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的活性层、设于所述活性层与栅极绝缘层上的源/漏极、设于所述栅极绝缘层上的数据线、设于所述栅极绝缘层上覆盖源/漏极与数据线的钝化层、设于所述钝化层上的图案化的像素电极、及覆盖所述像素电极与钝化层的平坦层；所述像素电极经由钝化层过孔与源/漏极接触；
所述液晶层中溶解有辅助配向剂，所述辅助配向剂使液晶分子在TFT基板的表面垂直排列；
所述平坦层使TFT基板的表面特性均一化，从而使所述辅助配向剂与TFT基板表面的作用力均匀。
所述平坦层为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层。
所述平坦层的厚度为50nm-1000nm。
所述平坦层通过化学气相沉积法形成。
本发明的有益效果：本发明提供的一种垂直配向型液晶显示器，对现有的利用辅助配向剂进行液晶分子的垂直配向的液晶显示器进行改进，通过将钝化层与像素电极的接触层设置为表面特性与像素电极相接近的氧化物层；或通过设置覆盖像素电极的平坦层，使得溶解在液晶层中的辅助配向剂与TFT基板表面的作用力均匀，能够解决由于像素电极的图案化造成的配向力差异与亮暗线显示缺陷问题。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的使用配向层的垂直配向型液晶显示器的剖面示意图；
图2为一种现有的使用配向层的MVA型液晶显示器的下基板一侧的平面俯视示意图；
图3为一种现有的使用配向层的MVA型液晶显示器的剖面示意图；
图4为一种现有的使用辅助配向剂的垂直配向型液晶显示器的剖面示意图；
图5为本发明垂直配向型液晶显示器的第一种实施方式的第一实施例的剖面示意图；
图6为本发明垂直配向型液晶显示器的第一种实施方式的第二实施例的剖面示意图；
图7为本发明垂直配向型液晶显示器的第一种实施方式的TFT基板一侧的平面俯视示意图；
图8为本发明垂直配向型液晶显示器的第二种实施方式的剖面示意图；
图9为本发明垂直配向型液晶显示器的第二种实施方式的TFT基板一侧的平面俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段极其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图5、图7，为本发明垂直配向型液晶显示器的第一种实施方式的第一实施例。该垂直配向型液晶显示器包括CF基板1、与所述CF基板1相对设置的TFT基板2、及设于所述CF基板1与TFT基板2之间的液晶层3。
所述液晶层3中溶解有辅助配向剂31。所述辅助配向剂31分子的一端与TFT基板2及CF基板1的表面具有特别的亲和力，能够吸附在TFT基板2及CF基板1的表面，所述辅助配向剂31分子的另一端与液晶层3中的液晶分子有极强的作用力，由此使液晶分子在TFT基板2及CF基板1的表面垂直排列。与现有的使用PI配向层的垂直配向型液晶显示器相比，本发明不使用PI配向层，而是采用辅助配向剂31实现液晶分子的垂直配向，由此省去了PI配向层制程中涉及的大量有害溶剂、与高温烘烤制程，能够节省机台及其能量损耗，更加环保、节能，并能够降低由于PI不良导致的良率损失。
所述TFT基板2包括玻璃基板21、设于所述玻璃基板21上的栅极221与扫描线222，设于所述玻璃基板21上覆盖栅极221与扫描线222的栅极绝缘层23、于所述栅极221上方设于栅极绝缘层23上的活性层24、设于所述活性层24与栅极绝缘层23上的源/漏极251、设于所述栅极绝缘层23上的数据线252、设于所述栅极绝缘层23上覆盖源/漏极251与数据线252的钝化层26、及设于所述钝化层26上的图案化的像素电极27；所述像素电极27经由钝化层过孔260与源/漏极251接触。具体的，所述像素电极27具有“米字型”狭缝图案，位于扫描线222与数据线252相互交错限定出来的区域。
所述钝化层26通过化学气相沉积法(Chemical Vapor Deposition，CVD)形成，其至少包括一层，其中与所述像素电极27的接触层为表面特性与像素电极27相接近的氧化物层。所述表面特性与像素电极27相接近的氧化物层为二氧化硅(SiO2)层、氧化铝(Al2O3)层、二氧化锆(ZrO2)层、或二氧化钛(TiO2)层。如图5所示的该第一实施例中，所述钝化层26为双层结构，其包括一最上层263与其它层261。所述最上层263是与所述像素电极27的接触层，即所述最上层263为表面特性与像素电极27相接近的氧化物层，如二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层等；所述其它层261为可为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层。例如，所述钝化层26的组成可为氮化硅层与二氧化硅层、或氮化硅层与氧化铝层、或氮化硅层与二氧化锆层、或氮化硅层与二氧化钛层、或二氧化硅层与氧化铝层、或二氧化硅层与二氧化锆层、或二氧化硅层与二氧化钛层等。
当然，所述钝化层26也可为三层结构，其最上层263是与所述像素电极27的接触层；而所述钝化层26的其它层261为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层之中的两种。例如，所述钝化层26的组成可为氮化硅层、二氧化硅层、与氧化铝层，或氮化硅层、二氧化硅层、与二氧化锆层、或氮化硅层、氧化铝层与二氧化锆层等。
该第一实施例将钝化层26由现有的单一氮化硅层改进为双层或三层结构，其中与所述像素电极27相接触的最上层263为二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层等，由于构成所述像素电极27的材料为氧化铟锡，也是一种氧化物，与二氧化硅、氧化铝、二氧化锆、或二氧化钛等具有更接近的表面能与表面特性，因此能够减少溶解在液晶层3中的辅助配向剂31与TFT基板2的不同区域表面的作用力差异，从而使所述辅助配向剂31与TFT基板2表面的作用力均匀，能够解决由于像素电极27的图案化造成的配向力差异与亮暗线显示缺陷问题。
请同时参阅图6、图7，为本发明垂直配向型液晶显示器的第一种实施方式的第二实施例。该第二实施例与第一实施例的区别在于，所述钝化层26为单层结构，该单层的钝化层26是与所述像素电极27的接触层，即该单层的钝化层26为二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层等，同样能够减少溶解在液晶层3中的辅助配向剂31与TFT基板2的不同区域表面的作用力差异，从而使所述辅助配向剂31与TFT基板2表面的作用力均匀，能够解决由于像素电极27的图案化造成的配向力差异与亮暗线显示缺陷问题。其它与第一实施例相同，此处不再赘述。
请同时参阅图8、图9，为本发明垂直配向型液晶显示器的第二种实施方式。该垂直配向型液晶显示器包括CF基板1、与所述CF基板1相对设置的TFT基板2、及设于所述CF基板1与TFT基板2之间的液晶层3。
所述液晶层3中溶解有辅助配向剂31。所述辅助配向剂31分子的一端与TFT基板2及CF基板1的表面具有特别的亲和力，能够吸附在TFT基板2及CF基板1的表面，所述辅助配向剂31分子的另一端与液晶层3中的液晶分子有极强的作用力，由此使液晶分子在TFT基板2及CF基板1的表面垂直排列。与现有的使用PI配向层的垂直配向型液晶显示器相比，本发明不使用PI配向层，而是采用辅助配向剂31实现液晶分子的垂直配向，由此省去了PI配向层制程中涉及的大量有害溶剂、与高温烘烤制程，能够节省机台及其能量损耗，更加环保、节能，并能够降低由于PI不良导致的良率损失。
所述TFT基板2包括玻璃基板21、设于所述玻璃基板21上的栅极221与扫描线222，设于所述玻璃基板21上覆盖栅极221与扫描线222的栅极绝缘层23、于所述栅极221上方设于栅极绝缘层23上的活性层24、设于所述活性层24与栅极绝缘层23上的源/漏极251、设于所述栅极绝缘层23上的数据线252、设于所述栅极绝缘层23上覆盖源/漏极251与数据线252的钝化层26、设于所述钝化层26上的图案化的像素电极27、及覆盖所述像素电极27与钝化层26的平坦层28；所述像素电极27经由钝化层过孔260与源/漏极251接触。具体的，所述像素电极27具有“米字型”狭缝图案，位于扫描线222与数据线252相互交错限定出来的区域。
该第二种实施方式，对所述钝化层26无特殊要求，可采用与现有技术相同的氮化硅层。所述平坦层28通过化学气相沉积法形成，其厚度为50nm-1000nm。所述平坦层28可为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层等。
由于所述平坦层28覆盖像素电极27与钝化层26，使TFT基板2的表面特性均一化，能够消除溶解在液晶层3中的辅助配向剂31与TFT基板2的不同区域表面的作用力差异，从而使所述辅助配向剂31与TFT基板2表面的作用力均匀，能够解决由于像素电极27的图案化造成的配向力差异与亮暗线显示缺陷问题。
综上所述，本发明的一种垂直配向型液晶显示器，对现有的利用辅助配向剂进行液晶分子的垂直配向的液晶显示器进行改进，通过将钝化层与像素电极的接触层设置为表面特性与像素电极相接近的氧化物层；或通过设置覆盖像素电极的平坦层，使得溶解在液晶层中的辅助配向剂与TFT基板表面的作用力均匀，能够解决由于像素电极的图案化造成的配向力差异与亮暗线显示缺陷问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (7)

1.一种垂直配向型液晶显示器，其特征在于，包括CF基板(1)、与所述CF基板(1)相对设置的TFT基板(2)、及设于所述CF基板(1)与TFT基板(2)之间的液晶层(3)；
所述TFT基板(2)包括玻璃基板(21)、设于所述玻璃基板(21)上的栅极(221)与扫描线(222)，设于所述玻璃基板(21)上覆盖栅极(221)与扫描线(222)的栅极绝缘层(23)、于所述栅极(221)上方设于栅极绝缘层(23)上的活性层(24)、设于所述活性层(24)与栅极绝缘层(23)上的源/漏极(251)、设于所述栅极绝缘层(23)上的数据线(252)、设于所述栅极绝缘层(23)上覆盖源/漏极(251)与数据线(252)的钝化层(26)、及设于所述钝化层(26)上的图案化的像素电极(27)；所述像素电极(27)经由钝化层过孔(260)与源/漏极(251)接触；
所述液晶层(3)中溶解有辅助配向剂(31)，所述辅助配向剂(31)一端吸附在TFT基板(2)及CF基板(1)的表面，另一端与液晶层(3)中的液晶分子间存在作用力，使液晶分子在TFT基板(2)的表面垂直排列；
所述钝化层(26)至少包括一层，其中与所述像素电极(27)的接触层为表面特性与像素电极(27)相接近的氧化物层，从而使所述辅助配向剂(31)与TFT基板(2)表面的作用力均匀；
所述表面特性与像素电极(27)相接近的氧化物层为二氧化锆层或二氧化钛层。
2.如权利要求1所述的垂直配向型液晶显示器，其特征在于，所述钝化层(26)为双层或三层结构，包括一最上层(263)与其它层(261)，所述最上层(263)是与所述像素电极(27)的接触层；所述其它层(261)为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层之中的一种或两种。
3.如权利要求1所述的垂直配向型液晶显示器，其特征在于，所述钝化层(26)为单层结构，该单层的钝化层(26)是与所述像素电极(27)的接触层。
4.如权利要求1所述的垂直配向型液晶显示器，其特征在于，所述钝化层(26)通过化学气相沉积法形成。
5.一种垂直配向型液晶显示器，其特征在于，包括CF基板(1)、与所述CF基板(1)相对设置的TFT基板(2)、及设于所述CF基板(1)与TFT基板(2)之间的液晶层(3)；
所述TFT基板(2)包括玻璃基板(21)、设于所述玻璃基板(21)上的栅极(221)与扫描线(222)，设于所述玻璃基板(21)上覆盖栅极(221)与扫描线(222)的栅极绝缘层(23)、于所述栅极(221)上方设于栅极绝缘层(23)上的活性层(24)、设于所述活性层(24)与栅极绝缘层(23)上的源/漏极(251)、设于所述栅极绝缘层(23)上的数据线(252)、设于所述栅极绝缘层(23)上覆盖源/漏极(251)与数据线(252)的钝化层(26)、设于所述钝化层(26)上的图案化的像素电极(27)、及覆盖所述像素电极(27)与钝化层(26)的平坦层(28)；所述像素电极(27)经由钝化层过孔(260)与源/漏极(251)接触；
所述液晶层(3)中溶解有辅助配向剂(31)，所述辅助配向剂(31)一端吸附在TFT基板(2)及CF基板(1)的表面，另一端与液晶层(3)中的液晶分子间存在作用力，使液晶分子在TFT基板(2)的表面垂直排列；
所述平坦层(28)使TFT基板(2)的表面特性均一化，从而使所述辅助配向剂(31)与TFT基板(2)表面的作用力均匀；
所述平坦层(28)为氮化硅层、二氧化硅层、氧化铝层、二氧化锆层、或二氧化钛层。
6.如权利要求5所述的垂直配向型液晶显示器，其特征在于，所述平坦层(28)的厚度为50nm-1000nm。
7.如权利要求5所述的垂直配向型液晶显示器，其特征在于，所述平坦层(28)通过化学气相沉积法形成。
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