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CN104460071A - 薄膜晶体管阵列基板及液晶显示面板 - Google Patents

薄膜晶体管阵列基板及液晶显示面板 Download PDF

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Publication number
CN104460071A
CN104460071A CN201410853092.8A CN201410853092A CN104460071A CN 104460071 A CN104460071 A CN 104460071A CN 201410853092 A CN201410853092 A CN 201410853092A CN 104460071 A CN104460071 A CN 104460071A
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common electrode
pixel electrode
thin film
film transistor
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衣志光
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201410853092.8A priority Critical patent/CN104460071A/zh
Priority to PCT/CN2015/070751 priority patent/WO2016106856A1/zh
Priority to US14/425,044 priority patent/US20160349585A1/en
Publication of CN104460071A publication Critical patent/CN104460071A/zh
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Abstract

本发明公开一种薄膜晶体管阵列基板，包括两个接线层(170)、栅极线(120a)、数据线(150a)及由栅极线(120a)与数据线(150a)交叉而限定的像素区域，像素区域包括公共电极(180)及设置在公共电极(180)上的像素电极(190)，像素电极(190)与公共电极(180)电绝缘，数据线(150a)包括断线区(151)，两个接线层(170)分别设置在断线区(151)的两侧，两个接线层(170)均与数据线(150a)电接触，像素电极(190)的邻近断线区(151)的部分去除，公共电极(180)邻近断线区(151)的部分与其余部分电绝缘，两个接线层(170)均与公共电极(180)邻近断线区(151)的部分电接触。本发明的断线区修复方法去除的像素电极的面积非常小，能够提升液晶显示面板的显示品质。

Description

薄膜晶体管阵列基板及液晶显示面板
技术领域
本发明属于液晶显示技术领域，具体地讲，涉及一种薄膜晶体管阵列基板及液晶显示面板。
背景技术
随着信息社会的发展，人们对平板显示器的需求得到了快速的增长。液晶显示器(Liquid Crystal Display，简称LCD)具有体积小、功耗低、无辐射等特点，在当前的平板显示器市场占据了主导地位。通常液晶显示器包括相对设置的液晶显示面板及背光模块，其中，由于液晶显示面板无法自身发光，所以其必须借用背光模块提供的面光源而显示影像。
液晶显示面板包括互相对向设置的上基板和下基板，以及夹设于上下基板之间的液晶层。而上基板通常称为彩色滤光片(Color Filter，CF)基板，下基板通常称为阵列(Array)基板。在阵列基板中，一般使用薄膜晶体管(Thin FilmTransistor，简称TFT)作为驱动，从而实现高速度、高亮度、高对比度的显示屏幕信息。
然而，在现有技术的阵列基板的制程过程中，会出现大量信号线断线的现象，因此需要对断线的信号线进行修复。目前的修复方法需要采用长导线跨越阵列基板上的公共电极，从而实现信号线断点处的修复。但是，这种方式会使的长导线覆盖到透明像素电极层(即ITO薄膜层)上，为了避免长导线与透明像素电极层电导通，需要将长导线所在区域的透明像素电极层去除。但是，由于长导线所占区域较大，需要去除的透明像素电极层的区域也大，而在去除透明像素电极层后的区域的相对处，只有彩色滤光片基板上的公共电极驱动液晶层中的液晶分子旋转，这将会使该相对处的液晶分子一直保持偏转，该相对处出现长亮状态，从而使液晶显示面板在该相对处的位置出现微亮点。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种薄膜晶体管阵列基板，包括栅极线、数据线以及由所述栅极线与所述数据线交叉而限定的像素区域，所述像素区域包括公共电极及设置在所述公共电极上的像素电极，所述像素电极与所述公共电极电绝缘，所述数据线包括断线区，所述薄膜晶体管阵列基板还包括至少两个接线层，所述两个接线层分别设置在所述断线区的两侧，所述两个接线层均与所述数据线电接触，所述像素电极的邻近所述断线区的部分去除，所述公共电极邻近所述断线区的部分与其余部分电绝缘，所述两个接线层均与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述像素区域还包括第二绝缘层，所述第二绝缘层设置在所述像素电极与所述公共电极之间。
进一步地，位于所述像素电极的去除部分处的第二绝缘层上设置有至少两个接触孔，其中，所述两个接线层设置在所述第二绝缘层上，所述两个接线层分别填充对应的接触孔，以与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述接线层与所述像素电极电绝缘。
进一步地，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
本发明的另一目的还在于提供一种液晶显示面板，包括相对设置的薄膜晶体管阵列基板与彩色滤光片基板，所述薄膜晶体管阵列基板包括栅极线、数据线以及由所述栅极线与所述数据线交叉而限定的像素区域，所述像素区域包括公共电极及设置在所述公共电极上的像素电极，所述像素电极与所述公共电极电绝缘，所述数据线包括断线区，所述薄膜晶体管阵列基板还包括至少两个接线层，所述两个接线层分别设置在所述断线区的两侧，所述两个接线层均与所述数据线电接触，所述像素电极的邻近所述断线区的部分去除，所述公共电极邻近所述断线区的部分与其余部分电绝缘，所述两个接线层均与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述像素区域还包括第二绝缘层，所述第二绝缘层设置在所述像素电极与所述公共电极之间。
进一步地，位于所述像素电极的去除部分处的第二绝缘层上设置有至少两个接触孔，其中，所述两个接线层设置在所述第二绝缘层上，所述两个接线层分别填充对应的接触孔，以与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述接线层与所述像素电极电绝缘。
进一步地，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
本发明将像素电极邻近断线区的部分去除，通过设置在断线区两侧的两个接线层分别与公共电极邻近断线区的部分和数据线电接触，以完成对断线区的修复，并且这种修复方法去除的像素电极的面积非常小，避免了现有技术的采用长导线而导致的去除大面积的像素电极。而且，由于去除的像素电极的面积非常小，即使在去除处形成微小的微亮点，在视觉上也不会受到影响，从而提升液晶显示面板的显示品质。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的薄膜晶体管阵列基板的正视示意图；
图2是根据本发明的实施例的液晶显示器的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
图1是根据本发明的实施例的薄膜晶体管阵列基板的正视示意图。整个薄膜晶体管阵列基板通常包括多条数据线、多条栅极线以及多条数据线与多条栅极线相互交叉形成的多个像素区域，为清楚起见，图1中只示出了其中一个像素区域作为示例。
参照图1，根据本发明的实施例的薄膜晶体管(Thin Film Transistor，简称TFT)阵列(Array)基板100包括由栅极线120a与数据线150a交叉而限定的像素区域。其中，该像素区域内包括设置在基板(例如，透明的玻璃基板)110上的第一透明导电层180和第二透明导电层190，以及位于栅极线120a与数据线150a交叉处附近的薄膜晶体管。其中，第一透明导电层180作为公共电极，第二透明导电层190作为像素电极。
该薄膜晶体管包括在基板110上依次形成的栅极120b、覆盖栅极120b的第一绝缘层(未示出)、由非晶硅(a-Si)形成的非晶硅层(即有源层)140、非晶硅层140上的源极150b和漏极150c、第二绝缘层(或称钝化层)130、位于漏极150c上方并在第二绝缘层上形成的过孔160以及第二透明导电层190，其中，第二透明导电层190通过过孔160与漏极150c接触。
在本实施例中，栅极线120a及栅极120b由第一金属层图案化形成，数据线150a、源极150b和漏极150c由第二金属层图案化形成。第一透明导电层180与第二透明导电层190均由氧化铟锡(ITO)等透明导电材料形成。
诚如背景技术中所描述，在现有的薄膜晶体管阵列基板的制程过程中，会出现大量信号线断线的现象。继续参照图1，图1中在数据线150a上的黑色区域为断线区151。
为了对数据线150a上的断线区151进行修复，在本实施例中，薄膜晶体管(Thin Film Transistor，简称TFT)阵列(Array)基板100还包括至少两个接线层170。将第二透明导电层190邻近断线区151的部分去除，以使第二透明导电层190被去除的部分下的第二绝缘层130暴露，并且将第二绝缘层130下方的第一透明导电层180邻近断线区151的部分切断，也就是说，第一透明导电层180邻近断线区151的部分与第一透明导电层180的其余部分不发生电接触，即电绝缘。在暴露的第二绝缘层130上开设两个接触孔131。两个接线层170分别设置在第二绝缘层130上以填充对应的接触孔131，从而与第一透明导电层180邻近断线区151的部分电接触，并且两个接线层170分别设置在断线区151的两侧，以与数据线150a电接触，进而完成对断线区151的修复。
由上述可知，将第二透明导电层190邻近断线区151的部分去除，通过分别设置在断线区151两侧的接线层170分别与第一透明导电层180邻近断线区151的部分和数据线150a电接触，以完成对断线区151的修复，并且这种修复方法去除的第二透明导电层190的面积非常小，避免了现有技术的采用长导线而导致的去除大面积的像素电极。而且，由于去除的第二透明导电层190的面积非常小，即使在去除处形成微小的微亮点，在视觉上也不会受到影响，从而提升液晶显示面板的显示品质。
图2是根据本发明的实施例的液晶显示器的结构示意图。
参照图2，根据本发明的实施例的液晶显示器包括液晶显示面板以及与该液晶显示面板相对设置的背光模组400，其中，背光模组400提供显示光源给该液晶显示面板，以使该液晶显示面板借由背光模组400提供的光来显示影像。而液晶显示面板具有如下配置：上述的薄膜晶体管阵列基板100；第二基板200，其为彩色滤光片(CF)基板，通常包括黑色矩阵以及配向层等；液晶层300，夹设在薄膜晶体管阵列基板100和第二基板200之间；并且薄膜晶体管阵列基板100和第二基板200被布置成彼此面对。
鉴于本发明中采用的第二基板200与现有技术相同，因此其具体结构可参照相关的现有技术，在此不再赘述。而本实施例的背光模组400也与现有液晶显示器中的背光模组相同，因此其具体结构也可参照相关的现有技术，在此也不再赘述。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (10)

1.一种薄膜晶体管阵列基板，包括栅极线(120a)、数据线(150a)以及由所述栅极线(120a)与所述数据线(150a)交叉而限定的像素区域，所述像素区域包括公共电极(180)及设置在所述公共电极(180)上的像素电极(190)，所述像素电极(190)与所述公共电极(180)电绝缘，所述数据线(150a)包括断线区(151)，其特征在于，所述薄膜晶体管阵列基板还包括至少两个接线层(170)，所述两个接线层(170)分别设置在所述断线区(151)的两侧，所述两个接线层(170)均与所述数据线(150a)电接触，所述像素电极(190)的邻近所述断线区(151)的部分去除，所述公共电极(180)邻近所述断线区(151)的部分与其余部分电绝缘，所述两个接线层(170)均与所述公共电极(180)邻近所述断线区(151)的部分电接触。
2.根据权利要求1所述的薄膜晶体管阵列基板，其特征在于，所述像素区域还包括第二绝缘层(130)，所述第二绝缘层(130)设置在所述像素电极(190)与所述公共电极(180)之间。
3.根据权利要求2所述的薄膜晶体管阵列基板，其特征在于，位于所述像素电极(190)的去除部分处的第二绝缘层(130)上设置有至少两个接触孔(131)，其中，所述两个接线层(170)设置在所述第二绝缘层(130)上，所述两个接线层(170)分别填充对应的接触孔(131)，以与所述公共电极(180)邻近所述断线区(151)的部分电接触。
4.根据权利要求3所述的薄膜晶体管阵列基板，其特征在于，所述接线层(170)与所述像素电极(190)电绝缘。
5.根据权利要求1至4任一项所述的薄膜晶体管阵列基板，其特征在于，所述公共电极(180)与所述像素电极(190)的材料均为氧化铟锡，所述接线层(170)的材料为金属。
6.一种液晶显示面板，包括相对设置的薄膜晶体管阵列基板(100)与彩色滤光片基板(200)，所述薄膜晶体管阵列基板包括栅极线(120a)、数据线(150a)以及由所述栅极线(120a)与所述数据线(150a)交叉而限定的像素区域，所述像素区域包括公共电极(180)及设置在所述公共电极(180)上的像素电极(190)，所述像素电极(190)与所述公共电极(180)电绝缘，所述数据线(150a)包括断线区(151)，其特征在于，所述薄膜晶体管阵列基板还包括至少两个接线层(170)，所述两个接线层(170)分别设置在所述断线区(151)的两侧，所述两个接线层(170)均与所述数据线(150a)电接触，所述像素电极(190)的邻近所述断线区(151)的部分去除，所述公共电极(180)邻近所述断线区(151)的部分与其余部分电绝缘，所述两个接线层(170)均与所述公共电极(180)邻近所述断线区(151)的部分电接触。
7.根据权利要求6所述的液晶显示面板，其特征在于，所述像素区域还包括第二绝缘层(130)，所述第二绝缘层(130)设置在所述像素电极(190)与所述公共电极(180)之间。
8.根据权利要求7所述的液晶显示面板，其特征在于，位于所述像素电极(190)的去除部分处的第二绝缘层(130)上设置有至少两个接触孔(131)，其中，所述两个接线层(170)设置在所述第二绝缘层(130)上，所述两个接线层(170)分别填充对应的接触孔(131)，以与所述公共电极(180)邻近所述断线区(151)的部分电接触。
9.根据权利要求8所述的液晶显示面板，其特征在于，所述接线层(170)与所述像素电极(190)电绝缘。
10.根据权利要求6至9任一项所述的液晶显示面板，其特征在于，所述公共电极(180)与所述像素电极(190)的材料均为氧化铟锡，所述接线层(170)的材料为金属。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017079943A1 (zh) * 2015-11-10 2017-05-18 深圳市华星光电技术有限公司 具有亮点缺陷的像素的修复方法、阵列基板及液晶面板
CN110456583A (zh) * 2019-06-11 2019-11-15 惠科股份有限公司 一种显示面板及其修补方法、显示装置
CN112748615A (zh) * 2021-01-04 2021-05-04 成都中电熊猫显示科技有限公司 阵列基板及阵列基板的修复方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9618810B2 (en) * 2015-02-11 2017-04-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and liquid crystal display panel
CN108646476B (zh) * 2018-03-22 2020-12-25 南京中电熊猫液晶显示科技有限公司 一种液晶面板的断线修复方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040169781A1 (en) * 2003-02-18 2004-09-02 Au Optronics Corp. Repair method for defects in data lines and flat panel display incorporating the same
US20060050219A1 (en) * 2000-08-30 2006-03-09 Lee Joun H Method for manufacturing an in plane switching mode liquid crystal display device
CN103278987A (zh) * 2013-05-24 2013-09-04 京东方科技集团股份有限公司 阵列基板、该阵列基板断线修复方法及显示装置
CN104035252A (zh) * 2014-05-23 2014-09-10 深圳市华星光电技术有限公司 一种阵列基板的布线结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI255935B (en) * 2000-09-13 2006-06-01 Chi Mei Optoelectronics Corp Method to manufacture address line of flat-panel display having repairing layer, and structure thereof
TWI354172B (en) * 2007-03-21 2011-12-11 Au Optronics Corp Pixel array substrate
CN100555051C (zh) * 2007-12-28 2009-10-28 昆山龙腾光电有限公司 液晶显示装置阵列基板及其缺陷修补方法
CN101776808B (zh) * 2010-02-10 2012-02-29 深超光电（深圳）有限公司 一种液晶显示器阵列基板及其修补方法
KR101925983B1 (ko) * 2011-12-14 2018-12-07 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101987320B1 (ko) * 2012-12-31 2019-06-11 삼성디스플레이 주식회사 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060050219A1 (en) * 2000-08-30 2006-03-09 Lee Joun H Method for manufacturing an in plane switching mode liquid crystal display device
US20040169781A1 (en) * 2003-02-18 2004-09-02 Au Optronics Corp. Repair method for defects in data lines and flat panel display incorporating the same
CN103278987A (zh) * 2013-05-24 2013-09-04 京东方科技集团股份有限公司 阵列基板、该阵列基板断线修复方法及显示装置
CN104035252A (zh) * 2014-05-23 2014-09-10 深圳市华星光电技术有限公司 一种阵列基板的布线结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017079943A1 (zh) * 2015-11-10 2017-05-18 深圳市华星光电技术有限公司 具有亮点缺陷的像素的修复方法、阵列基板及液晶面板
CN110456583A (zh) * 2019-06-11 2019-11-15 惠科股份有限公司 一种显示面板及其修补方法、显示装置
CN112748615A (zh) * 2021-01-04 2021-05-04 成都中电熊猫显示科技有限公司 阵列基板及阵列基板的修复方法

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