CN104459512B - MOSFET is detected region probe quantity computation method and probe location method for designing and probe card generation method - Google Patents
MOSFET is detected region probe quantity computation method and probe location method for designing and probe card generation method Download PDFInfo
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Abstract
Include the invention discloses a kind of detected region probe quantity computation methods of MOSFET：Size characteristics according to the detected area of existing MOSFET products create database；The minimum value for setting distance between probe and probe is more than or equal to 80um, and probe is more than or equal to 40um with the distance of detected area edge, as probe specification IunitDuring=500ma, probe pin footpath is d=55 ± 5um, as probe specification IunitDuring=1A, probe pin footpath is d=100 ± 5um；Test electric current according to product to be measured, test voltage determines the quantity N of grid region probegateWith the quantity N of source region probesource.The invention also discloses a kind of detected region probe Position Design methods of MOSFET and a kind of detected region probe card generation methods of MOSFET.The method of the present invention can quickly determine the detected region probe quantity of MOSFET for various MOSFET products, quick to determine the detected region probe positions of MOSFET, quickly generate the detected region probe cards of MOSFET.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of MOSFET is detected region probe quantity calculating side
Method.The invention further relates to a kind of detected region probe Position Design methods of MOSFET and a kind of detected region probe card lifes of MOSFET
Into method.
Background technology
MOSFET is metal oxide layer semiconductcor field effect transisto, abbreviation metal-oxide half field effect transistor (Metal-Oxide-
Semiconductor Field-Effect Transistor, MOSFET) it is that one kind can be widely used in analog circuit and number
The field-effect transistor (field-effect transistor) of word circuit.MOSFET is different according to the polarity of its " passage ", can divide
It is the two types of " N-type " and " p-type ", also commonly known as NMOSFET and PMOSFET, other abbreviations still include NMOS, PMOS
Deng.MOSFET probe cards are a kind of test interfaces, and mainly naked core is tested, by connecting test machine and chip, by passing
Defeated signal is tested chip parameter.
Manufacture of semiconductor rapid technological improvement in recent years, advanced Moore's Law preestimating method, at this stage to 32 nms below
Drive on boldly.Current product stresses compact, and IC volumes are less and less, function increasingly stronger, pin number is more and more, in order to reduce core
Piece encapsulates shared area and improves IC efficiency, and flip (Flip Chip) mode is encapsulated and be generally applied to drawing core at this stage
Piece, chipset, memory and CPU etc..Above-mentioned high-order packaged type unit price is high, if chip testing can be carried out before packaging,
It was found that in the middle of with the presence of defective products wafer, that is, be marked, until the defective products that these are marked is given up before back segment encapsulation procedure,
Unnecessary packaging cost can be saved.By the probe in probe card directly with chip on weld pad or projection directly contact, draw
Chip signal, then coordinate peripheral test instrument that the purpose of automatic measurement is reached with software control.Probe card is applied in IC not yet
Before encapsulation, for bare crystalline, functional test is done with probe by system, filter out defective products, carry out again after encapsulation engineering.Therefore, probe
Card is to influence one of sizable critical processes to manufacturing cost during IC is manufactured.
The product category of MOSFET is various when Wafer (wafer) tests are done, and generally requires the chip for each product
Size design probe card, but the construction cycle of MOSFET is very short, how to be designed within the most short time and meets size requirement
Probe card be technical problem that each Test Engineer runs into.At present, when the pin card for being MOSFET is designed, typically basis
The chip size of each product, calculates the coordinate dimension of probe card one by one, is then made probe card designs document and pays probe
Card manufacturer makes pin card.This method inefficiency and easily error.
The content of the invention
The technical problem to be solved in the present invention is to provide one kind and quickly determines that MOSFET is visited for various MOSFET products
Survey region probe quantity computation method.
The invention solves the problems that technology another problem is that provide one kind quickly determine MOSFET for various MOSFET products
The method for designing of detected region probe position.
The invention solves the problems that technology one more problem be to provide one kind quickly generate MOSFET for various MOSFET products
The method of detected region probe card.
In order to solve the above technical problems, the detected region probe quantity computation methods of MOSFET that the present invention is provided, including with
Lower step：
1) size characteristics according to the detected area of existing MOSFET products create database, the detected area be source region and
Grid region；
2) minimum value for setting distance between probe and probe is more than or equal to 80um, the distance of probe and detected area edge
More than or equal to 40um, as probe specification IunitDuring=500ma, probe pin footpath is d=55 ± 5um, as probe specification Iunit=1A
When, probe pin footpath is d=100 ± 5um
3) the test electric current according to product to be measured, test voltage, determine the quantity N of grid region probegateWith source region probe
Quantity Nsource；
NgateIt is worth and is determined with the distance of detected area edge according to distance between size, the probe in grid region and probe, Ngate
Less than or equal to 2；
Nsource=A+B+C；
A is the number of probes that source region applies electric current and voltage, Imax/Iunit=A, ImaxIt is the full test electricity of test product
Stream, IunitIt is the current specification of probe material；
B is surplus number of probes, works as IunitSpecification be 500ma when, surplus number of probes be 2；Work as IunitSpecification be 1A
When, surplus number of probes is 1；
C is the number of probes of induced-current and voltage,
If source region applies the number of probes A of electric current and voltage less than or equal to 2, the number of probes C of induced-current and voltage
It is 1；
If source region applies the number of probes A of electric current and voltage more than 2 less than or equal to 8, the probe of induced-current and voltage
Quantity C is 2；
If source region applies the number of probes A of electric current and voltage more than 8 less than or equal to 20, the probe of induced-current and voltage
Quantity C is 4.
A kind of detected region probe Position Design methods of MOSFET, including the detected region probes of MOSFET that the present invention is provided
Each step of quantity computation method, it is further comprising the steps of：
It is under the same coordinate system with all coordinates under each step and sets up (coordinate round dot can arbitrarily be set)；Visited in this area
Pin position probe type corresponding with the position (applies the spy of probe, surplus probe, induced-current and the voltage of electric current and voltage
Pin) without fixed correspondence；Probe type can be changed according to its rear end connection type.
4) if source region and grid region are square, the coordinate and N in source region and diagonal 4 points of grid region are obtainedgateAnd NsourceValue,
By NsourceValue is decomposed factor and obtains X axis number of probes XsourceValue and Y-axis number of probes YsourceValue；
The coordinate acquiring method and grid region probe location in grid region determine in the following ways：
Condition 1) horizontal direction between the angle steel joint of grid region two distance less than all probes of horizontal direction internal diameter and with
And the spacing and two summations of boundary value of pin and pin, A points, B points are the angle steel joint of grid region two；
Condition 2) vertical direction between the angle steel joint of grid region two distance less than vertical square to all pins internal diameter and with
And two summations of boundary value of spacing and left and right of pin and pin；
Condition 3) diagonal between the angle steel joint of grid region two distance less than all pins of diagonal internal diameter and
And the spacing and two summations of boundary value of pin and pin；
If above-mentioned condition 1)~3) while meeting, NgateValue need to be 1, and the probe location in grid region is grid region center
Point；
If condition 1) it is unsatisfactory for, according to Principle of Average Allocation, the midpoint of grid region vertical edges in the horizontal direction will
Grid region trisection, the first Along ent is the first point coordinates, and the second Along ent is the second coordinate.
If condition 2) it is unsatisfactory for, according to Principle of Average Allocation, the midpoint of grid region horizontal sides vertically will
Grid region trisection, the first Along ent is the coordinate of the first probe, and the second Along ent is the coordinate of the second probe；
If condition 3) it is unsatisfactory for, according to Principle of Average Allocation, by grid region diagonally by grid region trisection, the
One Along ent is the coordinate of the first probe, and the second Along ent is the coordinate of the second probe；
The coordinate acquiring method and source region probe location of source region determine in the following ways：
Condition 4) distance of vertical direction is more than Y between the angle steel joint of source region twosourceRoot probe internal diameter and and pin and pin
Two summations of boundary value of spacing and left and right；
Condition 5) distance of horizontal direction is more than X between the angle steel joint of source region twosourceRoot probe internal diameter and and pin and pin
Two summations of boundary value of spacing and left and right；
If meeting condition 4) and 5) condition, source region horizontal direction is done into Xsource+ 1 decile, vertical direction is Ysource+
1 decile, the intersecting point of bisector both vertically and horizontally is source region probe position；
If being unsatisfactory for condition 4 simultaneously) and 5), Xsource=Xsource- 1, Ysource=Ysource- 1, after computing
XsourceAnd YsourceValue after return condition 1) 2) judge again, until meeting condition, obtain the probe location coordinate of source region；
If being unsatisfactory for condition 4), meet condition 5), then Ysource=Ysource- 1, XsourceIt is constant, after computing
XsourceAnd YsourceValue after return condition 1) 2) judge again, until meeting condition, obtain the probe location coordinate of source region；
If meeting condition 4), it is unsatisfactory for condition 5), then Xsource=Xsource- 1, YsourceIt is constant, after computing
XsourceAnd YsourceValue after return condition 4) 5) judge again, until meeting condition, obtain the probe location coordinate of source region；
If 5) source region and grid region circle are square；
Grid region is circle, the coordinate of grid region central point, and grid region radius is input into, with reference to Ngate, judge first
Condition 6) whether less than minimum size requirement, i.e., grid region internal diameter size is only sufficient to a feelings for pin to border circular areas diameter
Condition, if it is satisfied, then report error message, it is impossible to support that probe layout is designed；
If condition 6) be unsatisfactory for, decision condition 7) whether border circular areas diameter in grid region less than NgateRoot probe internal diameter and
And two summations of boundary value of spacing and left and right of pin and pin；
If condition 7) meet, report error message, NgateIt is 1 to be worth, and now the probe location in grid region is the grid region center of circle
Position；
If condition 7) it is unsatisfactory for, internal diameter is done into N along the vertical direction or horizontal direction of grid region circular diametergate+ 1 etc.
Point, the first Along ent is first coordinate position of probe, and the second Along ent is second coordinate position of probe；
Source region is shaped as circle, the coordinate of input source district center point, and source region radius, ties NSOURCEValue judges first
Conditions Condition 8) whether less than minimum size requirement, i.e. source region internal diameter size is only sufficient to one to source region border circular areas diameter
The situation of root pin, if it is satisfied, then report error message, it is impossible to support that probe layout is designed；
If condition 8) be unsatisfactory for, decision condition 9) whether source region border circular areas diameter less than NSOURCERoot probe internal diameter
With and pin and pin spacing and or so two summations of boundary value；
If condition 8) meet, error message is reported, adjust pin NSOURCEValue is adjusted to NSOURCE- 1, decision condition 8 again),
If condition 8) it is unsatisfactory for, illustrate that source region can support NSOURCEThe placement scheme of root pin, along the vertical direction of source region circular diameter
Or interior diameter is N by horizontal directionSOURCE+ 1 decile, the first Along ent is first coordinate position of probe, the second Along ent
It is second coordinate position of probe, the rest may be inferred, until completing NSOURCEThe layout of root probe.
A kind of detected region probe card generation methods of MOSFET, including the detected region probe Position Design methods of MOSFET
All steps, it is further comprising the steps of：
6) using the chart function generation probe coordinate domain of VB macrolanguages.
The product category of MOSFET is various when Wafer tests are done, and generally requires to be set for the chip size of each product
Meter probe card, but the construction cycle of MOSFET is very short, and the probe for meeting size requirement how is designed within the most short time
Card is the technical problem that our each Test Engineer runs into, the invention provides method can for various MOSFET products it is fast
Speed determines the detected region probe quantity of MOSFET, quick to determine the detected region probe positions of MOSFET, quickly generates MOSFET quilts
Detecting area probe card.
Brief description of the drawings
The present invention is further detailed explanation with specific embodiment below in conjunction with the accompanying drawings：
Fig. 1 is the schematic flow sheet of the detected region probe card generation methods of MOSFET of the present invention.
Fig. 2 is detected region probe distance limitation schematic diagram.
Fig. 3 is a kind of detected area's schematic diagram of MOSFET products, its square detected area of display.
Fig. 4 is a kind of detected area's schematic diagram of MOSFET products, the circular detected area of its display.
Specific embodiment
With reference to shown in Fig. 1 combinations Fig. 2, the detected region probe card generation methods of MOSFET that the present invention is provided, including it is following
Step：It is under the same coordinate system with all coordinates under each step and sets up (coordinate origin can arbitrarily be set)；
1) size characteristics according to the detected area of existing MOSFET products create database, the detected area be source region and
Grid region；
2) minimum value for setting distance between probe and probe is more than or equal to 80um, the distance of probe and detected area edge
More than or equal to 40um, as probe specification IunitDuring=500ma, probe pin footpath is d=55 ± 5um, as probe specification Iunit=1A
When, probe pin footpath is d=100 ± 5um；
3) the test electric current according to product to be measured, test voltage, determine the quantity N of grid region probegateWith source region probe
Quantity Nsource；
NgateIt is worth and is determined with the distance of detected area edge according to distance between size, the probe in grid region and probe, Ngate
Less than or equal to 2；
Nsource=A+B+C；
A is the number of probes that source region applies electric current and voltage, Imax/Iunit=A, ImaxIt is the full test electricity of test product
Stream, IunitIt is the current specification of probe material；
B is surplus number of probes, works as IunitSpecification be 500ma when, surplus number of probes be 2；Work as IunitSpecification be 1A
When, surplus number of probes is 1；
C is the number of probes of induced-current and voltage,
If source region applies the number of probes A of electric current and voltage less than or equal to 2, the number of probes C of induced-current and voltage
It is 1；
If source region applies the number of probes A of electric current and voltage more than 2 less than or equal to 8, the probe of induced-current and voltage
Quantity C is 2；
If source region applies the number of probes A of electric current and voltage more than 8 less than or equal to 20, the probe of induced-current and voltage
Quantity C is 4；
4) with reference to shown in Fig. 3, if source region and grid region are square, obtain source region and diagonal 4 points of grid region coordinate (X1,
Y1) (X2, Y2) (X3, Y3) (X4, Y4) and NgateAnd NsourceValue, by NsourceValue is decomposed factor and obtains X axis number of probes
XsourceValue and Y-axis number of probes YsourceValue；
The coordinate acquiring method and grid region probe location in grid region determine in the following ways：
Condition 1) distance of horizontal direction between the angle steel joint of grid region two (i.e. in Fig. 3, between A points and B points) is less than level
The internal diameter of all probes in direction and and pin and pin spacing and two summations of boundary value, A points, B points are the angle steel joint of grid region two；
Condition 2) vertical direction between the angle steel joint of grid region two (i.e. in Fig. 3, between A points and B points) distance less than vertical
Square to all pins internal diameter and and pin and pin spacing and or so two summations of boundary value；
Condition 3) diagonal between the angle steel joint of grid region two (i.e. in Fig. 3, between A points and B points) distance less than right
The internal diameter of all pins in linea angulata direction and and pin and pin spacing and two summations of boundary value；
If above-mentioned condition 1)~3) while meeting, NgateValue need to be 1, and the probe location in grid region is grid region center
Point；
If condition 1) it is unsatisfactory for, according to Principle of Average Allocation, the midpoint of grid region vertical edges in the horizontal direction will
Grid region trisection, the first Along ent is the first point coordinates, and the second Along ent is the second coordinate.
If condition 2) it is unsatisfactory for, according to Principle of Average Allocation, the midpoint of grid region horizontal sides vertically will
Grid region trisection, the first Along ent is the coordinate of the first probe, the coordinate of second the second probe of Along ent；
If condition 3) it is unsatisfactory for, according to Principle of Average Allocation, by grid region diagonally by grid region trisection, the
One Along ent is the coordinate of the first probe, and the second Along ent is the coordinate of the second probe；
The coordinate acquiring method and source region probe location of source region determine in the following ways：
Condition 4) distance of vertical direction is more than Y between the angle steel joint of source region two (i.e. in Fig. 3, between C points and B points)sourceRoot
Probe internal diameter and and pin and pin spacing and or so two summations of boundary value；
Condition 5) distance of horizontal direction is more than X between the angle steel joint of source region two (i.e. in Fig. 3, between C points and B points)sourceRoot
Probe internal diameter and and pin and pin spacing and or so two summations of boundary value；
If meeting condition 4) and 5) condition, source region horizontal direction is done into Xsource+ 1 decile, vertical direction is Ysource+
1 decile, the intersecting point of bisector both vertically and horizontally is source region probe position；
If being unsatisfactory for condition 4 simultaneously) and 5), Xsource=Xsource- 1, Ysource=Ysource- 1, after computing
XsourceAnd YsourceValue after return condition 1) 2) judge again, until meeting condition, obtain the probe location coordinate of source region；
If being unsatisfactory for condition 4), meet condition 5), then Ysource=Ysource- 1, XsourceIt is constant, after computing
XsourceAnd YsourceValue after return condition 1) 2) judge again, until meeting condition, obtain the probe location coordinate of source region；
If meeting condition 4), it is unsatisfactory for condition 5), then Xsource=Xsource- 1, YsourceIt is constant, after computing
XsourceAnd YsourceValue after return condition 4) 5) judge again, until meeting condition, obtain the probe location coordinate of source region；
Above-mentioned (source region and grid region are square) deterministic process can be realized through but not limited to following algorithm：
IF(X2–X1)<2d+2d1+d2&&(Y2–Y1)<2d+2d1+d2&&SQRT((X2–X1)2+(Y2–Y1)2)<2d+
2d1+d2；
## output error messages：
##There is no enough margin for 2probes in gate area！！Ngate=Ngate-1.
G/FG/S=((X1+X2)/2, (Y1+Y2)/2)；
Else IF(Y2–Y1)>2d+2d1+d2；
G/F=((X1+X2)/2, (Y1+ (Y2-Y1)/3)；G/S=((X1+X2)/2, (Y1+ (Y2-Y1) * 2/3)；
OR Else IF(X2–X1)>2d+2d1+d2；
G/F=((Y1+Y2)/2, (X1+ (X2-X1)/3)；G/S=((Y1+Y2)/2, (X1+ (X2-X1) * 2/3)；
OR Else IF SQRT((X2–X1)2+(Y2–Y1)2)>2d+2d1+d2；
G/F=((X1+ (X2-X1)/3, (Y1+ (Y2-Y1)/3)；G/S=((X1+ (X2-X1) * 2/3, (Y1+ (Y2-Y1) *
2/3)
1)IF(Y4–Y3)>2d+2d1+d2&&(X4–X3)>3d+2d1+2d2
S/F1=((X3+ (X4-X3)/4), (Y3+ (Y4-Y3)/3))
S/S1=((X3+ (X4-X3) * 2/4), (Y3+ (Y4-Y3)/3))
S/F2=((X3+ (X4-X3) * 3/4), (Y3+ (Y4-Y3)/3))
S/F3=((X3+ (X4-X3)/4), (Y3+ (Y4-Y3) * 2/3))
S/S2=((X3+ (X4-X3) * 2/4), (Y3+ (Y4-Y3) * 2/3))
S/F4=((X3+ (X4-X3) * 3/4), (Y3+ (Y4-Y3) * 2/3))
Else output error messages：
##There is no enough margin for 2*3probes in source area！！Please
adjust the Xsource and Ysource value.
5) with reference to shown in Fig. 4, if source region and grid region circle are square；
Grid region is circle, the coordinate (X5, Y5) of input grid region central point E, and grid region radius R1, with reference to Ngate, first
Judge
Condition 6) whether less than minimum size requirement, i.e., grid region internal diameter size is only sufficient to a feelings for pin to border circular areas diameter
Condition, if it is satisfied, then report error message, it is impossible to support that probe layout is designed；
If condition 6) be unsatisfactory for, decision condition 7) whether border circular areas diameter in grid region less than NgateRoot probe internal diameter and
And two summations of boundary value of spacing and left and right of pin and pin；
If condition 7) meet, report error message, NgateIt is 1 to be worth, and now the probe location in grid region is the grid region center of circle
Position；
If condition 7) it is unsatisfactory for, internal diameter is done into N along the vertical direction or horizontal direction of grid region circular diametergate+ 1 etc.
Point, the first Along ent is first coordinate position of probe, and the second Along ent is second coordinate position of probe；
Source region is shaped as circle, the coordinate (X6, Y6) of input source district center point F, and source region radius R2, ties NSOURCEValue
Judge first
Conditions Condition 8) whether less than minimum size requirement, i.e. source region internal diameter size is only sufficient to one to source region border circular areas diameter
The situation of root pin, if it is satisfied, then report error message, it is impossible to support that probe layout is designed；
If condition 8) be unsatisfactory for, decision condition 9) whether source region border circular areas diameter less than NSOURCERoot probe internal diameter
With and pin and pin spacing and or so two summations of boundary value；
If condition 8) meet, error message is reported, adjust pin NSOURCEValue is adjusted to NSOURCE- 1, decision condition 8 again),
If condition 8) it is unsatisfactory for, illustrate that source region can support NSOURCEThe placement scheme of root pin, along the vertical direction of source region circular diameter
Or interior diameter is N by horizontal directionSOURCE+ 1 decile, the first Along ent is first coordinate position of probe, the second Along ent
It is second coordinate position of probe, the rest may be inferred, until completing NSOURCEThe layout of root probe.
Above-mentioned (source region and grid region are circle) deterministic process can be realized through but not limited to following algorithm：
IF((2R1<d+2d1)or(2R2<d+2d1))
## output error messages：
##There is no enough margin for probes.
IF(2R1<2d+2d1+d2)
## output error messages：
##There is no enough margin for 2probes in gate area！！Ngate=Ngate-1.
G/FG/S=(X1, Y1)；
Else G/F=((X1-R1/3), Y1), G/S=((X1+R1/3), Y1)
##G/F=(X1, (Y1-R1/3)), G/S=(X1, (Y1+R1/3))
IF(2R2>5d+4d2+2d1)
S/F1=((X2-2R2/3), Y2), S/F2=((X2-R2/3), Y2), S/S1=(X2, Y2)
S/F3=((X2+R2/3), Y2), S/F4=(X2+2R2/3), Y2)
##S/F2=(X2, (Y2-2R2/3)), S/F2=(X2, (Y2-R2/3)), S/S1=(X2, Y2)
S/F3=(X2, (Y2+R2/3)), S/F4=(X2, (Y2+2R2/3))
ELSE output error messages：
##There is no enough margin for 5probes in source area！！Nsource=
Nsource-1.
6) using the chart function generation probe coordinate domain of VB macrolanguages.
The present invention has been described in detail above by specific embodiment and embodiment, but these not constitute it is right
Limitation of the invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Enter, these also should be regarded as protection scope of the present invention.
Claims (3)
1. a kind of MOSFET is detected region probe quantity computation method, it is characterized in that, comprise the following steps：
1) size characteristics according to the detected area of existing MOSFET products create database, and the detected area is source region and grid
Area；
2) minimum value for setting distance between probe and probe is more than or equal to 80um, and probe is more than with the distance of detected area edge
Equal to 40um, as probe specification IunitDuring=500mA, probe pin footpath is d=55 ± 5um, as probe specification IunitDuring=1A, visit
Pin pin footpath is d=100 ± 5um；
3) the test electric current according to product to be measured, test voltage, determine the quantity N of grid region probegateWith the quantity of source region probe
Nsource；
NgateIt is worth and is determined with the distance of detected area edge according to distance between size, the probe in grid region and probe, NgateIt is less than
Equal to 2；
Nsource=A+B+C；
A is the number of probes that source region applies electric current and voltage, Imax/Iunit=A, ImaxIt is the full test electric current of test product,
IunitIt is the current specification of probe material；
B is surplus number of probes, works as IunitSpecification be 500mA when, surplus number of probes be 2；Work as IunitSpecification be 1A when, it is remaining
Amount number of probes is 1；
C is the number of probes of induced-current and voltage；
If source region applies the number of probes A of electric current and voltage less than or equal to 2, the number of probes C of induced-current and voltage is 1；
If source region applies the number of probes A of electric current and voltage more than 2 less than or equal to 8, the number of probes C of induced-current and voltage
It is 2；
If source region applies the number of probes A of electric current and voltage more than 8 less than or equal to 20, the number of probes of induced-current and voltage
C is 4；
The quantity N of grid region probegateDetermine in the following ways：
Condition 1) horizontal direction between the angle steel joint of grid region two internal diameter and and pin of the distance less than all probes of horizontal direction
With the spacing of pin and the summation of two boundary values；
Condition 2) vertical direction between the angle steel joint of grid region two distance less than all pins of vertical direction internal diameter and and pin and
Two summations of boundary value of spacing and left and right of pin；
Condition 3) diagonal between the angle steel joint of grid region two distance less than all pins of diagonal internal diameter and and
The spacing and two summations of boundary value of pin and pin；
If above-mentioned condition 1)~3) while meeting, NgateValue need to be 1, otherwise NgateValue need to be 2.
2. each step of a kind of detected region probe Position Design methods of MOSFET, including claim 1 methods described, its feature
It is, it is further comprising the steps of：
The all coordinates of following steps are set up under being the same coordinate system；
4) if source region and grid region are square, the coordinate and N in source region and diagonal 4 points of grid region are obtainedgateAnd NsourceValue, will
NsourceValue is decomposed factor and obtains X axis number of probes XsourceValue and Y-axis number of probes YsourceValue；
The coordinate acquiring method and grid region probe location in grid region determine in the following ways：
Condition 1) horizontal direction between the angle steel joint of grid region two internal diameter and and pin of the distance less than all probes of horizontal direction
With the spacing of pin and the summation of two boundary values, A points, B points are the angle steel joint of grid region two；
Condition 2) vertical direction between the angle steel joint of grid region two distance less than all pins of vertical direction internal diameter and and pin and
Two summations of boundary value of spacing and left and right of pin；
Condition 3) diagonal between the angle steel joint of grid region two distance less than all pins of diagonal internal diameter and and
The spacing and two summations of boundary value of pin and pin；
If above-mentioned condition 1)~3) while meeting, NgateValue need to be 1, and the probe location in grid region is grid region central point；
If condition 1) it is unsatisfactory for, according to Principle of Average Allocation, by the midpoint of grid region vertical edges in the horizontal direction by grid region
Trisection, the first Along ent is the first point coordinates, and the second Along ent is the second coordinate；
If condition 2) it is unsatisfactory for, according to Principle of Average Allocation, by the midpoint of grid region horizontal sides vertically by grid region
Trisection, the first Along ent is the coordinate of the first probe, and the second Along ent is the coordinate of the second probe；
If condition 3) it is unsatisfactory for, according to Principle of Average Allocation, by grid region diagonally by grid region trisection, first etc.
Branch is the coordinate of the first probe, and the second Along ent is the coordinate of the second probe；
The coordinate acquiring method and source region probe location of source region determine in the following ways：
Condition 4) distance of vertical direction is more than Y between the angle steel joint of source region twosourceRoot probe internal diameter and and pin and pin spacing
With two summations of boundary value in left and right；
Condition 5) distance of horizontal direction is more than X between the angle steel joint of source region twosourceRoot probe internal diameter and and pin and pin spacing
With two summations of boundary value in left and right；
If meeting condition 4) and 5) condition, source region horizontal direction is done into Xsource+ 1 decile, vertical direction is Ysource+ 1 etc.
Point, the intersecting point of bisector both vertically and horizontally is source region probe position；
If being unsatisfactory for condition 4 simultaneously) and 5), Xsource=Xsource- 1, Ysource=Ysource- 1, by the X after computingsource
And YsourceValue after return condition 4) 5) judge again, until meeting condition, obtain the probe location coordinate of source region；
If being unsatisfactory for condition 4), meet condition 5), then Ysource=Ysource- 1, XsourceIt is constant, by the X after computingsourceWith
YsourceValue after return condition 4) 5) judge again, until meeting condition, obtain the probe location coordinate of source region；
If meeting condition 4), it is unsatisfactory for condition 5), then Xsource=Xsource- 1, YsourceIt is constant, by the X after computingsourceWith
YsourceValue after return condition 4) 5) judge again, until meeting condition, obtain the probe location coordinate of source region；
If 5) source region and grid region are circle：
Grid region is circle, the coordinate of grid region central point, and grid region radius is input into, with reference to Ngate, decision condition 6 first)；
Condition 6) whether less than minimum size requirement, i.e., grid region internal diameter size is only sufficient to a situation for pin to border circular areas diameter,
If it is satisfied, then report error message, it is impossible to support that probe layout is designed；
If condition 6) be unsatisfactory for, decision condition 7) whether border circular areas diameter in grid region less than NgateRoot probe internal diameter and and
Two summations of boundary value of spacing and left and right of pin and pin；
If condition 7) meet, report error message, NgateIt is 1 to be worth, and now the probe location in grid region is grid region home position；
If condition 7) it is unsatisfactory for, internal diameter is done into N along the vertical direction or horizontal direction of grid region circular diametergate+ 1 decile, first
Along ent is first coordinate position of probe, and the second Along ent is second coordinate position of probe；
Source region is shaped as circle, the coordinate of input source district center point, and source region radius, with reference to NsourceValue decision condition first
Condition 8)；
Condition 8) whether less than minimum size requirement, i.e., source region internal diameter size is only sufficient to a feelings for pin to source region border circular areas diameter
Condition, if it is satisfied, then report error message, it is impossible to support that probe layout is designed；
If condition 8) be unsatisfactory for, decision condition 9) whether source region border circular areas diameter less than NsourceRoot probe internal diameter and with
And two summations of boundary value of spacing and left and right of pin and pin；
If condition 8) meet, report error message, NsourceValue is adjusted to Nsource- 1, decision condition 8 again), if condition
8) it is unsatisfactory for, then illustrates that source region can support NsourceThe placement scheme of root pin, along the vertical direction or level of source region circular diameter
Direction interior diameter is done into Nsource+ 1 decile, the first Along ent is first coordinate position of probe, and the second Along ent is second
The coordinate position of probe, the rest may be inferred, until completing NsourceThe layout of root probe.
3. a kind of all steps of the detected region probe card generation methods of MOSFET, including claim 2, it is characterized in that, also wrap
Include following steps：
6) using the chart function generation probe coordinate domain of VB macrolanguages.
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| CN201364347Y (en) * | 2008-12-30 | 2009-12-16 | 中芯国际集成电路制造(上海)有限公司 | Probe card |
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| CN103018501A (en) * | 2012-12-11 | 2013-04-03 | 江苏汇成光电有限公司 | Wafer test probe card |
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| CN201364347Y (en) * | 2008-12-30 | 2009-12-16 | 中芯国际集成电路制造(上海)有限公司 | Probe card |
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