CN104426359A - Bootstrapping circuit and bootstrapping method for integrated junction type field effect transistor - Google Patents
Bootstrapping circuit and bootstrapping method for integrated junction type field effect transistor Download PDFInfo
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- CN104426359A CN104426359A CN201310405068.3A CN201310405068A CN104426359A CN 104426359 A CN104426359 A CN 104426359A CN 201310405068 A CN201310405068 A CN 201310405068A CN 104426359 A CN104426359 A CN 104426359A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- Electronic Switches (AREA)
- Power Conversion In General (AREA)
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Abstract
The invention provides a bootstrapping circuit and a bootstrapping method for an integrated junction type field effect transistor. The bootstrapping circuit comprises a driving circuit, a junction type field effect transistor, a bootstrapping capacitor, a high-edge transistor and a low-edge transistor, wherein the first output end of the driving circuit is connected to the grid of the high-edge transistor; the second output end of the driving circuit is connected to the grid of the low-edge transistor; the third output end of the driving circuit is connected to the source of the grid of the high-edge transistor, the drain of the low-edge transistor, a load and the first end of the bootstrapping capacitor; the junction type field effect transistor is integrated to the driving circuit; the grid of the junction type field effect transistor is connected to the driving circuit in order to input a logical signal; the source of the junction type field effect transistor is connected to a driving power supply; the drain of the junction type field effect transistor is connected to the second end of the bootstrapping capacitor. According to the bootstrapping circuit and the bootstrapping method, the junction type field effect transistor is integrated to the driving circuit, so that the quantity of elements in a whole system can be effectively reduced, the complexity degree of the circuit is lowered, and the integration degree of a device is increased.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit and Bootload thereof, particularly relate to a kind of boostrap circuit and Bootload of integrated junction field effect transistor.
Background technology
Along with portable be the requirement of electronic product energy-saving, and the technical difficulty of the heat radiation of portable type electronic product, proposes more and more higher requirement for power management chip wherein, the efficiency requirements particularly in voltage transitions process.Wherein Switching Power Supply management extensive use adapted to the energy-efficient requirement of this contemporary electronic consumer goods just, breach linear power supply manage the efficiency that cannot break through low and cannot realize boost manage bottleneck.Even if the change of powder source management mode achieves the most important lifting of a step of efficiency, and change by the mode of integrated circuit the mode that power boost management adopts the heaviness of transformer.
As shown in Figure 1, this boostrap circuit comprises existing a kind of boostrap circuit: drive circuit 101, bootstrap diode 102, bootstrap capacitor 103, flash transistor 104 and low limit transistor 105;
The grid that first output of described drive circuit 101 is connected to the grid of described flash transistor 104, the second output is connected to described low limit transistor 105, the 3rd output are connected to the first end of the source electrode of the grid of described flash transistor 104, the drain electrode of low limit transistor 105, load and bootstrap capacitor 103;
The drain electrode of described flash transistor 104 connects high level, and the source electrode of described low limit transistor 105 connects low level;
The input termination driving power of described bootstrap diode 102, output connects described bootstrap capacitor 103.
The operation of this boostrap circuit comprises:
Drive circuit 101 makes described flash transistor 104 turn off to the grid output low level of flash transistor 104, grid to low limit transistor 105 exports high level makes described low limit transistor 105 open, and driving power is charged to bootstrap capacitor 103 by the unidirectional general character of described bootstrap diode 102;
Drive circuit 101 makes described flash transistor 104 open to the grid output high level of flash transistor 104, grid output low level to low limit transistor 105 makes described low limit transistor 105 turn off, the voltage that described bootstrap capacitor 103 exports and the high level that described flash transistor defeated 104 goes out pool high voltage and export, and realize bootstrapping; Meanwhile, described bootstrap diode 102 due to oppositely turn off the high voltage that bootstrapping produced and the low voltage power supply of drive circuit 101 inside isolated.
In existing half-bridge or full bridge driving circuit, boostrap circuit drives as flash and is absolutely necessary.Although, above-mentioned boostrap circuit can the bootstrapping of realizing circuit, but, it includes a bootstrap diode, integrated bootstrap diode is very difficult often in the driving circuit, this can increase the component number of whole system, thus increases circuit complexity, is unfavorable for the raising of boostrap circuit integrated level and the raising of boostrap circuit performance.
Therefore, provide one to reduce component number, the boostrap circuit improving integrated level is necessary.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of boostrap circuit and Bootload of integrated junction field effect transistor, is difficult to be integrated in the problems such as drive circuit causes circuit complicated for solving bootstrap diode in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of boostrap circuit of integrated junction field effect transistor, at least comprise:
Drive circuit, junction field effect transistor, bootstrap capacitor, flash transistor and low limit transistor;
The grid that first output of described drive circuit is connected to the grid of described flash transistor, the second output is connected to described low limit transistor, the 3rd output are connected to the first end of the source electrode of the grid of described flash transistor, the drain electrode of low limit transistor, load and bootstrap capacitor;
The drain electrode of described flash transistor connects high level, and the source electrode of described low limit transistor connects low level;
Described junction field effect transistor is integrated in described drive circuit, the grid of described junction field effect transistor is connected to described drive circuit with input logic signal, the source electrode of described junction field effect transistor is connected to driving power, and drain electrode is connected to the second end of described bootstrap capacitor.
As a kind of preferred version of the boostrap circuit of integrated junction field effect transistor of the present invention, described logical signal controls opening and shutting off of described junction field effect transistor.
As a kind of preferred version of the boostrap circuit of integrated junction field effect transistor of the present invention, described flash transistor is nmos pass transistor or PMOS transistor.
As a kind of preferred version of the boostrap circuit of integrated junction field effect transistor of the present invention, described low limit transistor is nmos pass transistor or PMOS transistor.
As a kind of preferred version of the boostrap circuit of integrated junction field effect transistor of the present invention, the operating voltage of described load is greater than the supply power voltage of described driving power.
The present invention also provides a kind of Bootload of boostrap circuit of integrated junction field effect transistor, comprises step:
Drive circuit makes described flash transistor turn off to the grid output low level of flash transistor, grid to low limit transistor exports high level makes described low limit transistor open, grid to described junction field effect transistor exports high level logic signal makes described junction field effect transistor open, and driving power is to charging bootstrap capacitor;
Drive circuit makes described flash transistor open to the grid output high level of flash transistor, grid output low level to low limit transistor makes described low limit transistor turn off, grid output low level logical signal to described junction field effect transistor makes described junction field effect transistor turn off, the voltage that described bootstrap capacitor exports and the high level that described flash transistor exports pool high voltage and export, and realize bootstrapping; Meanwhile, the shutoff of described junction field effect transistor high voltage that bootstrapping is produced and the low voltage power supply of drive circuit inside isolated.
As mentioned above, the invention provides a kind of boostrap circuit of integrated junction field effect transistor, at least comprise: drive circuit, junction field effect transistor, bootstrap capacitor, flash transistor and low limit transistor; The grid that first output of described drive circuit is connected to the grid of described flash transistor, the second output is connected to described low limit transistor, the 3rd output are connected to the first end of the source electrode of the grid of described flash transistor, the drain electrode of low limit transistor, load and bootstrap capacitor; The drain electrode of described flash transistor connects high level, and the source electrode of described low limit transistor connects low level; Described junction field effect transistor is integrated in described drive circuit, the grid of described junction field effect transistor is connected to described drive circuit with input logic signal, the source electrode of described junction field effect transistor is connected to driving power, and drain electrode is connected to the second end of described bootstrap capacitor.Junction field effect transistor is integrated in drive circuit by the present invention, effectively can reduce the component number of whole system, reduces the complexity of circuit, improves the integrated level of device.Structure of the present invention is simple, is applicable to industrial production.
Accompanying drawing explanation
Fig. 1 is shown as the electrical block diagram of the present invention's a kind of boostrap circuit of the prior art.
Fig. 2 is shown as the electrical block diagram of the boostrap circuit of integrated junction field effect transistor of the present invention.
Fig. 3 is shown as the steps flow chart schematic diagram of the Bootload of the boostrap circuit of integrated junction field effect transistor of the present invention.
Element numbers explanation
201 drive circuits
202 junction field effect transistors
203 bootstrap capacitors
204 flash transistors
205 low limit transistors
206 loads
S11-S12 step
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 2 ~ Fig. 3.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Figure 2, the present embodiment provides a kind of boostrap circuit of integrated junction field effect transistor, at least comprises:
Drive circuit 201, junction field effect transistor 202, bootstrap capacitor 203, flash transistor 204 and low limit transistor 205;
The grid that first output of described drive circuit 201 is connected to the grid of described flash transistor 204, the second output is connected to described low limit transistor 205, the 3rd output are connected to the first end of the source electrode of the grid of described flash transistor 204, the drain electrode of low limit transistor 205, load 206 and bootstrap capacitor 203;
The drain electrode of described flash transistor 204 connects high level, and the source electrode of described low limit transistor 205 connects low level;
Described junction field effect transistor (JFET) 202 is integrated in described drive circuit 201, the grid of described junction field effect transistor 202 is connected to described drive circuit 201 with input logic signal, the source electrode of described junction field effect transistor 202 is connected to driving power, and drain electrode is connected to the second end of described bootstrap capacitor 203.
Described junction field effect transistor 202, is the p type island region (or N-type region) of respectively spreading a high impurity concentration on the both sides of one piece of N-type (or P type) semi-conducting material, forms two asymmetric PN junctions.Liang Ge P district (or N district) is connected in parallel, draws an electrode, as grid, respectively draw an electrode, respectively as source electrode and drain electrode at the two ends of N-type (or P type) semiconductor.The N district (or P district) be clipped in the middle of two PN junctions is the passage of electric current, be then conducting channel (abbreviation raceway groove), the pipe of this structure is called N raceway groove (or P raceway groove) technotron.Described junction field effect transistor 202, can be integrated in described drive circuit 201 in BCD technique, thus reduces the number of elements of whole system, reduces the complexity of circuit, improves the integrated level of device.
Described drive circuit 201, except the function such as switch of flash transistor 204, low limit transistor 205 described in conventional control, also for described junction field effect transistor 202 provides a logical signal, for controlling the switch of described junction field effect transistor 202, namely described logical signal is provided by described drive circuit 201, for controlling opening and shutting off of described junction field effect transistor 202.
Described flash transistor 204 can be nmos pass transistor or PMOS transistor.In the present embodiment, described flash transistor 204 is nmos pass transistor.Certainly, in other implementation process, described flash transistor 204 also can adopt other switch element to replace, and is not limited thereto.
Described low limit transistor 205 can be nmos pass transistor or PMOS transistor.In the present embodiment, described low limit transistor 205 is nmos pass transistor.Certainly, in other implementation process, described low limit transistor 205 also can adopt other switch element to replace, and is not limited thereto.
Propose high-tension effect because boostrap circuit generally plays, therefore, the operating voltage of described load 206 is greater than the supply power voltage of described driving power.
As shown in Figures 2 and 3, the present embodiment also provides a kind of Bootload of boostrap circuit of integrated junction field effect transistor, comprises step:
First, carry out step S11, drive circuit 201 makes described flash transistor 204 turn off to the grid output low level of flash transistor 204, grid to low limit transistor 205 exports high level makes described low limit transistor 205 open, grid to described junction field effect transistor 202 exports high level logic signal makes described junction field effect transistor 202 open, and driving power charges to bootstrap capacitor 203;
Then, carry out step S12, drive circuit 201 makes described flash transistor 204 open to the grid output high level of flash transistor 204, grid output low level to low limit transistor 205 makes described low limit transistor 205 turn off, grid output low level logical signal to described junction field effect transistor 202 makes described junction field effect transistor 202 turn off, the voltage that described bootstrap capacitor 203 exports and the high level that described flash transistor 204 exports pool high voltage and export, and realize bootstrapping; Meanwhile, the high voltage that bootstrapping produces by the shutoff of described junction field effect transistor 202 is isolated with the low voltage power supply of drive circuit 201 inside, the safety of guarantee drive circuit 201.
As mentioned above, the invention provides a kind of boostrap circuit of integrated junction field effect transistor, at least comprise: drive circuit 201, junction field effect transistor 202, bootstrap capacitor 203, flash transistor 204 and low limit transistor 205; The grid that first output of described drive circuit 201 is connected to the grid of described flash transistor 204, the second output is connected to described low limit transistor 205, the 3rd output are connected to the first end of the source electrode of the grid of described flash transistor 204, the drain electrode of low limit transistor 205, load 206 and bootstrap capacitor 203; The drain electrode of described flash transistor 204 connects high level, and the source electrode of described low limit transistor 205 connects low level; Described junction field effect transistor 202 is integrated in described drive circuit 201, the grid of described junction field effect transistor 202 is connected to described drive circuit 201 with input logic signal, the source electrode of described junction field effect transistor 202 is connected to driving power, and drain electrode is connected to the second end of described bootstrap capacitor 203.Junction field effect transistor 202 is integrated in drive circuit 201 by the present invention, effectively can reduce the component number of whole system, reduces the complexity of circuit, improves the integrated level of device.Structure of the present invention is simple, is applicable to industrial production.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (6)
1. a boostrap circuit for integrated junction field effect transistor, is characterized in that, at least comprises:
Drive circuit, junction field effect transistor, bootstrap capacitor, flash transistor and low limit transistor;
The grid that first output of described drive circuit is connected to the grid of described flash transistor, the second output is connected to described low limit transistor, the 3rd output are connected to the first end of the source electrode of the grid of described flash transistor, the drain electrode of low limit transistor, load and bootstrap capacitor;
The drain electrode of described flash transistor connects high level, and the source electrode of described low limit transistor connects low level;
Described junction field effect transistor is integrated in described drive circuit, the grid of described junction field effect transistor is connected to described drive circuit with input logic signal, the source electrode of described junction field effect transistor is connected to driving power, and drain electrode is connected to the second end of described bootstrap capacitor.
2. the boostrap circuit of integrated junction field effect transistor according to claim 1, is characterized in that: described logical signal controls opening and shutting off of described junction field effect transistor.
3. the boostrap circuit of integrated junction field effect transistor according to claim 1, is characterized in that: described flash transistor is nmos pass transistor or PMOS transistor.
4. the boostrap circuit of integrated junction field effect transistor according to claim 1, is characterized in that: described low limit transistor is nmos pass transistor or PMOS transistor.
5. the boostrap circuit of integrated junction field effect transistor according to claim 1, is characterized in that: the operating voltage of described load is greater than the supply power voltage of described driving power.
6. a Bootload for the boostrap circuit of integrated junction field effect transistor as claimed in any one of claims 1 to 5, wherein, is characterized in that:
Described Bootload comprises the following steps:
Drive circuit makes described flash transistor turn off to the grid output low level of flash transistor, grid to low limit transistor exports high level makes described low limit transistor open, grid to described junction field effect transistor exports high level logic signal makes described junction field effect transistor open, and driving power is to charging bootstrap capacitor;
Drive circuit makes described flash transistor open to the grid output high level of flash transistor, grid output low level to low limit transistor makes described low limit transistor turn off, grid output low level logical signal to described junction field effect transistor makes described junction field effect transistor turn off, the voltage that described bootstrap capacitor exports and the high level that described flash transistor exports pool high voltage and export, and realize bootstrapping; Meanwhile, the shutoff of described junction field effect transistor high voltage that bootstrapping is produced and the low voltage power supply of drive circuit inside isolated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310405068.3A CN104426359B (en) | 2013-09-06 | 2013-09-06 | A kind of boostrap circuit and Bootload of integrated junction field effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310405068.3A CN104426359B (en) | 2013-09-06 | 2013-09-06 | A kind of boostrap circuit and Bootload of integrated junction field effect transistor |
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| CN104426359A true CN104426359A (en) | 2015-03-18 |
| CN104426359B CN104426359B (en) | 2018-07-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104820514A (en) * | 2015-04-01 | 2015-08-05 | 上海中航光电子有限公司 | Touch display panel and driving method thereof |
| CN107800281A (en) * | 2017-10-27 | 2018-03-13 | 东南大学 | Boostrap circuit and drive circuit for high voltage half-bridge gate drive circuit |
| CN109194316A (en) * | 2018-08-20 | 2019-01-11 | 南京异或科技有限公司 | The driving circuit and its method of Novel high-end gate field effect pipe |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181848A (en) * | 1995-12-27 | 1998-05-13 | 菲利浦电子有限公司 | Integrated driver for half-bridge circuit |
| US6040732A (en) * | 1997-04-09 | 2000-03-21 | Analog Devices, Inc. | Switched-transconductance circuit within integrated T-switches |
| US20040232968A1 (en) * | 2003-05-19 | 2004-11-25 | Analog Devices, Inc. | Dynamic method for limiting the reverse base-emitter voltage |
| JP2005235892A (en) * | 2004-02-18 | 2005-09-02 | Mitsubishi Electric Corp | Semiconductor device |
| CN1914787A (en) * | 2004-01-28 | 2007-02-14 | 株式会社瑞萨科技 | Switching power supply and semiconductor integrated circuit |
| US20080100378A1 (en) * | 2006-10-30 | 2008-05-01 | Infineon Technologies Austria Ag | Circuits and methods for controlling a switch |
| CN101312328A (en) * | 2007-05-24 | 2008-11-26 | 立锜科技股份有限公司 | Boot strap capacitor charging circuit and driving integrated circuit using same |
| CN101944904A (en) * | 2010-07-16 | 2011-01-12 | 昌芯(西安)集成电路科技有限责任公司 | Bootstrap automatic circuit and switching power supply comprising same |
| CN202334466U (en) * | 2011-12-09 | 2012-07-11 | 重庆电子工程职业学院 | Change-over switch circuit |
| CN102832810A (en) * | 2012-08-30 | 2012-12-19 | 成都芯源系统有限公司 | Bootstrap voltage refresh control circuit, voltage conversion circuit and related control method |
-
2013
- 2013-09-06 CN CN201310405068.3A patent/CN104426359B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181848A (en) * | 1995-12-27 | 1998-05-13 | 菲利浦电子有限公司 | Integrated driver for half-bridge circuit |
| US6040732A (en) * | 1997-04-09 | 2000-03-21 | Analog Devices, Inc. | Switched-transconductance circuit within integrated T-switches |
| US20040232968A1 (en) * | 2003-05-19 | 2004-11-25 | Analog Devices, Inc. | Dynamic method for limiting the reverse base-emitter voltage |
| CN1914787A (en) * | 2004-01-28 | 2007-02-14 | 株式会社瑞萨科技 | Switching power supply and semiconductor integrated circuit |
| JP2005235892A (en) * | 2004-02-18 | 2005-09-02 | Mitsubishi Electric Corp | Semiconductor device |
| US20080100378A1 (en) * | 2006-10-30 | 2008-05-01 | Infineon Technologies Austria Ag | Circuits and methods for controlling a switch |
| CN101312328A (en) * | 2007-05-24 | 2008-11-26 | 立锜科技股份有限公司 | Boot strap capacitor charging circuit and driving integrated circuit using same |
| CN101944904A (en) * | 2010-07-16 | 2011-01-12 | 昌芯(西安)集成电路科技有限责任公司 | Bootstrap automatic circuit and switching power supply comprising same |
| CN202334466U (en) * | 2011-12-09 | 2012-07-11 | 重庆电子工程职业学院 | Change-over switch circuit |
| CN102832810A (en) * | 2012-08-30 | 2012-12-19 | 成都芯源系统有限公司 | Bootstrap voltage refresh control circuit, voltage conversion circuit and related control method |
Non-Patent Citations (1)
| Title |
|---|
| 刘福太: "《电子线路 学习指导与习题讲解》", 30 June 2002 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104820514A (en) * | 2015-04-01 | 2015-08-05 | 上海中航光电子有限公司 | Touch display panel and driving method thereof |
| CN104820514B (en) * | 2015-04-01 | 2017-05-10 | 上海中航光电子有限公司 | Touch display panel and driving method thereof |
| US9958995B2 (en) | 2015-04-01 | 2018-05-01 | Shanghai Avic Opto Electronics Co., Ltd. | Touch display panel including second lead between electrode unit and common lead and method for driving the same |
| CN107800281A (en) * | 2017-10-27 | 2018-03-13 | 东南大学 | Boostrap circuit and drive circuit for high voltage half-bridge gate drive circuit |
| CN109194316A (en) * | 2018-08-20 | 2019-01-11 | 南京异或科技有限公司 | The driving circuit and its method of Novel high-end gate field effect pipe |
| CN109194316B (en) * | 2018-08-20 | 2022-04-15 | 南京沁恒微电子股份有限公司 | Drive circuit and method of high-side gate field effect transistor |
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| CN104426359B (en) | 2018-07-06 |
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Effective date of registration: 20230421 Address after: Room 909, 9th Floor, Building 2, No. 1298 Daqi Baoshan Road, Beilun District, Ningbo City, Zhejiang Province, 315800 Patentee after: Ningbo Baoxinyuan Power Semiconductor Co.,Ltd. Address before: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee before: Shanghai ruobast Semiconductor Co.,Ltd. |