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CN104377542A - Pin type packaging structure and method for semiconductor laser - Google Patents

Pin type packaging structure and method for semiconductor laser Download PDF

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Publication number
CN104377542A
CN104377542A CN201410730192.1A CN201410730192A CN104377542A CN 104377542 A CN104377542 A CN 104377542A CN 201410730192 A CN201410730192 A CN 201410730192A CN 104377542 A CN104377542 A CN 104377542A
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China
Prior art keywords
tongue
positive pole
semiconductor laser
cathode tube
epoxy resin
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CN201410730192.1A
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Chinese (zh)
Inventor
李璟
王国宏
毕瑞祥
杨华
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Abstract

本发明公开了一种半导体激光器引脚式封装结构及方法。所述封装结构包括:正极管舌、负极管舌、环氧树脂透镜;半导体激光器芯片的负极通过焊料粘结在负极管舌上,芯片与负极管舌平行;所述半导体激光器芯片的正极通过金线与正极管舌相连;所述正极管舌和负极管舌由所述环氧树脂透镜所封装,所述正极管舌和负极管舌作为所述半导体激光器的正极引脚和负极引脚自所述环氧树脂透镜引出。本发明具有封装结构简单、封装工艺简化、成本低、可靠性好等优点。

The invention discloses a pin type packaging structure and method of a semiconductor laser. The packaging structure includes: positive pole tongue, negative pole tongue, epoxy resin lens; the negative electrode of the semiconductor laser chip is bonded on the negative pole tongue by solder, and the chip is parallel to the negative pole tongue; the positive pole of the semiconductor laser chip is passed through the gold The positive pole tongue and the negative pole tongue are encapsulated by the epoxy resin lens, and the positive pole tongue and the negative pole tongue are used as the positive pole pin and the negative pole pin of the semiconductor laser. The above-mentioned epoxy resin lens leads out. The invention has the advantages of simple packaging structure, simplified packaging process, low cost, good reliability and the like.

Description

一种半导体激光器引脚式封装结构及方法A semiconductor laser lead package structure and method

技术领域technical field

本发明涉及半导体激光器的封装技术,具体涉及一种半导体激光器引脚式封装结构及方法,适用于GaAs基、InP基、GaN基、SiC基和ZnO基半导体激光器的封装。The invention relates to the packaging technology of semiconductor lasers, in particular to a lead-type packaging structure and method for semiconductor lasers, which is suitable for the packaging of GaAs-based, InP-based, GaN-based, SiC-based and ZnO-based semiconductor lasers.

背景技术Background technique

半导体激光器是以半导体材料为光增益介质的一类激光器,其核心是一个自身具有光反馈结构的二极管芯片,通常称为激光二极管。半导体激光器与其它激光器相比,具有体积小、效率高、寿命长、可以直接调谐等优点。A semiconductor laser is a type of laser with a semiconductor material as the optical gain medium. Its core is a diode chip with an optical feedback structure, usually called a laser diode. Compared with other lasers, semiconductor lasers have the advantages of small size, high efficiency, long life, and direct tuning.

半导体激光器的用途非常广泛。应用领域涉及诸多方面:如:光纤通信、激光传感、激光测距、制导、激光理疗等。近年来,小功率可见光半导体激光器多用来制作成激光指示器、激光笔、激光手电等,功率通常以毫瓦为单位。由于它体积小、功率低、携带方便,受到了广大使用者的喜爱。Semiconductor lasers are used in a wide variety of applications. The application fields involve many aspects: such as: optical fiber communication, laser sensing, laser ranging, guidance, laser physiotherapy, etc. In recent years, low-power visible light semiconductor lasers are mostly used to make laser pointers, laser pointers, laser flashlights, etc., and the power is usually in milliwatts. Because of its small size, low power and easy to carry, it is loved by the majority of users.

目前半导体激光器通常采用TO(transistor outline晶体管轮廓)管座进行封装,如图1和图2所示,传统的TO封装形式包括TO管座、管舌、管脚和管帽。管舌设在管座的上面,其形状为六面柱,在管舌上粘结半导体激光器芯片,在管座上加盖管帽。管帽的四周为密封金属,中间帽顶为透镜。芯片的腔面向着管帽中心的透镜。这种封装形式能够通过TO管舌把激光器芯片中的热量导向TO管座和管脚,散热效果良好。但缺点是封装支架的成本很高,TO管座、管舌、管脚均为镀金金属,TO管帽也是由金属和玻璃透镜组成。由于小功率激光器用于激光指示,功率只有5mw或更小,激光器工作时的热量很小,TO封装形式适用于半导体激光器输出功率为百毫瓦以上量级的情况,若用于小功率激光器的封装,成本偏高。At present, semiconductor lasers are usually packaged with TO (transistor outline transistor outline) sockets, as shown in Figure 1 and Figure 2, the traditional TO packaging form includes TO sockets, tongues, pins and caps. The nozzle tongue is arranged on the top of the tube seat, and its shape is a hexagonal column. The semiconductor laser chip is bonded on the tube tongue, and a tube cap is added on the tube seat. The surroundings of the cap are sealed metal, and the top of the middle cap is a lens. The cavity of the chip faces the lens in the center of the cap. This packaging form can guide the heat in the laser chip to the TO tube base and pins through the TO tube tongue, and the heat dissipation effect is good. But the disadvantage is that the cost of the package bracket is very high, the TO tube base, nozzle, and pins are all gold-plated metal, and the TO tube cap is also composed of metal and glass lens. Since low-power lasers are used for laser indication, the power is only 5mw or less, and the heat generated by the laser is very small. Package, the cost is high.

发明内容Contents of the invention

本发明的目的是提供一种半导体激光器引脚式封装结构及方法,尤其适用于小功率半导体激光器芯片的封装。它封装工艺简单,成本极低,适用于激光笔、激光指示等应用领域。The object of the present invention is to provide a semiconductor laser pin-type packaging structure and method, which is especially suitable for the packaging of low-power semiconductor laser chips. It has a simple packaging process and extremely low cost, and is suitable for application fields such as laser pointers and laser pointers.

为实现上述发明目的,本发明提供了一种半导体激光器引脚式封装结构,其包括:正极管舌、负极管舌、环氧树脂透镜;半导体激光器芯片的负极通过焊料粘结在负极管舌上,芯片与负极管舌平行;所述半导体激光器芯片的正极通过金线与正极管舌相连;所述正极管舌和负极管舌由所述环氧树脂透镜所封装,所述正极管舌和负极管舌作为所述半导体激光器的正极引脚和负极引脚自所述环氧树脂透镜引出。In order to achieve the above-mentioned purpose of the invention, the present invention provides a semiconductor laser pin type package structure, which includes: positive pole tongue, negative pole tongue, epoxy resin lens; the negative electrode of the semiconductor laser chip is bonded on the negative pole tongue by solder , the chip is parallel to the negative pole; the positive pole of the semiconductor laser chip is connected to the positive pole through a gold wire; the positive pole and the negative pole are encapsulated by the epoxy resin lens, and the positive pole and the negative pole The nozzle is drawn out from the epoxy resin lens as the positive pin and the negative pin of the semiconductor laser.

本发明还提供了一种利用如上所述的半导体激光器引脚式封装结构进行封装的方法,包括以下步骤:The present invention also provides a method for packaging using the semiconductor laser pin type packaging structure as described above, comprising the following steps:

步骤1:将半导体激光器芯片的负极焊接在所述负极管舌上;Step 1: welding the cathode of the semiconductor laser chip on the cathode tongue;

步骤2:用金线将半导体激光器芯片正极与所述正极管舌相连;Step 2: Connect the anode of the semiconductor laser chip to the anode tongue with a gold wire;

步骤3:将所述正极管舌和负极管舌在保护气氛下在模具中灌注环氧树脂胶,固化成草帽状,并将所述正极管舌和负极管舌的一端作为正极引脚和负极引脚露出。Step 3: Pouring the positive and negative tabs with epoxy resin glue in the mold under a protective atmosphere, curing them into a straw hat shape, and using one end of the positive and negative tabs as the positive pin and the negative The pins are exposed.

本发明提出的上述半导体激光器引脚式封装结构和方法,具有封装结构简单、封装工艺简化、成本低、可靠性好等优点。The semiconductor laser pin type packaging structure and method proposed by the present invention have the advantages of simple packaging structure, simplified packaging process, low cost, good reliability and the like.

附图说明Description of drawings

图1为原半导体激光器TO封装结构立体图;Figure 1 is a perspective view of the TO packaging structure of the original semiconductor laser;

图2为原半导体激光器TO封装结构俯视图;Figure 2 is a top view of the TO packaging structure of the original semiconductor laser;

图3为本发明半导体激光器引脚式封装结构剖面图;Fig. 3 is a cross-sectional view of a pin-type package structure of a semiconductor laser of the present invention;

〔主要元件〕〔Main components〕

半导体激光器管芯;2-焊料;3-负极管舌和引脚;4-正极管舌和引脚;5-金线;6-环氧树脂管帽。Semiconductor laser tube core; 2-solder; 3-negative pole tongue and pin; 4-positive pole tongue and pin; 5-gold wire; 6-epoxy resin tube cap.

具体实施方式Detailed ways

为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明作进一步的详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

图3示出了本发明提出的一种半导体激光器引脚式封装结构的剖面示意图。如图3所示,所述封装结构包括正极管舌4、负极管舌3、环氧树脂透镜6。半导体激光器芯片通过焊料粘结在负极管舌上,芯片与负极管舌平行,芯片的腔面向上出光。小功率半导体激光器芯片的正极通过金线与正极管舌相连。所述正极管舌和负极管舌由所述环氧树脂透镜所封装,所述正极管舌和负极管舌作为所述半导体激光器的正极引脚和负极引脚自所述环氧树脂透镜引出。所述环氧树脂透镜为草帽状结构。所述正极管舌和负极管舌均是长方柱形状或其他柱体状,负极管舌的体积比正极管舌略大。FIG. 3 shows a schematic cross-sectional view of a semiconductor laser lead package structure proposed by the present invention. As shown in FIG. 3 , the packaging structure includes a positive electrode tab 4 , a negative electrode tab 3 , and an epoxy resin lens 6 . The semiconductor laser chip is bonded on the cathode tongue by solder, the chip is parallel to the cathode tongue, and the cavity of the chip emits light upward. The anode of the low-power semiconductor laser chip is connected to the anode tongue through a gold wire. The positive pole tab and the negative pole tongue are encapsulated by the epoxy resin lens, and the positive pole tab and the negative pole tongue are led out from the epoxy resin lens as positive pole pins and negative pole pins of the semiconductor laser. The epoxy resin lens is a straw hat-shaped structure. Both the positive pole tab and the negative pole tab are in the shape of a rectangular column or other cylinders, and the volume of the negative pole tab is slightly larger than that of the positive pole tab.

所述正极管舌和引脚、负极管舌和引脚为铜、铝、铁或其他金属材料。The positive pole tongue and pin, negative pole tongue and pin are made of copper, aluminum, iron or other metal materials.

本发明还提出了一种小功率半导体激光器芯片的封装方法,包括如下步骤:The present invention also proposes a packaging method for a low-power semiconductor laser chip, comprising the steps of:

步骤1:采用金锡焊料2将小功率半导体激光器芯片1通过固晶二工艺焊接在半导体激光器引脚式封装结构的负极管舌3上。半导体激光器芯片1的负极与封装结构的负极管舌3相粘结,半导体激光器芯片1的腔面向上发射出激光。焊接温度275度,焊接时间12s,在氮气气氛下进行焊接。Step 1: Use gold-tin solder 2 to weld the low-power semiconductor laser chip 1 on the cathode tongue 3 of the semiconductor laser pin-type package structure through the second process of die bonding. The cathode of the semiconductor laser chip 1 is bonded to the cathode tab 3 of the packaging structure, and the cavity of the semiconductor laser chip 1 emits laser light upward. The welding temperature is 275 degrees, the welding time is 12s, and the welding is performed under a nitrogen atmosphere.

半导体激光器引脚式封装结构的正极和负极管舌为长方柱形状或其他形状。半导体激光器引脚式封装结构的管舌和管脚可以是铜、铁、铝等高热导率的金属。焊料也可以是导电银浆、铟焊料等。The positive pole and the negative pole tongue of the semiconductor laser pin package structure are in the shape of a rectangular column or other shapes. The tongues and pins of the semiconductor laser pin package structure can be metals with high thermal conductivity such as copper, iron, and aluminum. The solder can also be conductive silver paste, indium solder, and the like.

步骤2:通过打线机用金线5将半导体激光器芯片1正极(P面)与正极管舌4相连。金线直径10~30um。Step 2: Connect the anode (P surface) of the semiconductor laser chip 1 to the anode tongue 4 with a gold wire 5 by a wire bonding machine. The diameter of the gold wire is 10-30um.

步骤3:将此封装体在保护气氛下在模具中灌注环氧树脂胶,固化成草帽状,露出正极和负极引脚。环氧树脂胶的形状可以通过一次光学设计形成有利于半导体激光器芯片出光的各种不同曲率的帽状。保护气氛为氮气或其他惰性气体。灌注胶也可以是硅胶、聚合物等透光、易成型、散热较好的材料。Step 3: Fill the package with epoxy resin glue in the mold under a protective atmosphere, and cure it into a straw hat shape, exposing the positive and negative pins. The shape of the epoxy resin glue can form various caps with different curvatures that are beneficial to the light output of the semiconductor laser chip through an optical design. The protective atmosphere is nitrogen or other inert gases. The perfusion glue can also be materials such as silica gel, polymer, etc. that are transparent, easy to form, and have good heat dissipation.

以上半导体激光器引脚式封装结构和方法,具有封装结构简单、封装工艺简化、成本低、可靠性好等优点。The above semiconductor laser pin type packaging structure and method have the advantages of simple packaging structure, simplified packaging process, low cost, good reliability and the like.

以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention, and are not intended to limit the present invention. Within the spirit and principles of the present invention, any modifications, equivalent replacements, improvements, etc., shall be included in the protection scope of the present invention.

Claims (9)

1. a semiconductor laser pinned encapsulating structure, it comprises: positive pole pipe tongue, cathode tube tongue, epoxy resin lenses; The negative pole of semiconductor laser chip is by solder attach on cathode tube tongue, and chip is parallel with cathode tube tongue; The positive pole of described semiconductor laser chip is connected with positive pole pipe tongue by gold thread; Described positive pole pipe tongue and cathode tube tongue are packaged by described epoxy resin lenses, and described positive pole pipe tongue and cathode tube tongue are drawn from described epoxy resin lenses as the positive pole pin of described semiconductor laser and negative pole pin.
2. encapsulating structure as claimed in claim 1, wherein, described epoxy resin lenses is careless cap-like structure.
3. encapsulating structure as claimed in claim 1, wherein, described positive pole pipe tongue and cathode tube tongue are rectangular column shape, and the volume ratio positive pole pipe tongue of cathode tube tongue is large.
4. encapsulating structure as claimed in claim 1, wherein, described positive pole pipe tongue and cathode tube tongue are made up of metal material.
5. encapsulating structure as claimed in claim 1, wherein, the chamber of described semiconductor laser chip is towards upper bright dipping.
6. utilize the semiconductor laser pinned encapsulating structure described in claim 1 to carry out the method encapsulated, comprise the following steps:
Step 1: the negative pole of semiconductor laser chip is welded on described cathode tube tongue;
Step 2: semiconductor laser chip positive pole is connected with described positive pole pipe tongue with gold thread;
Step 3: by described positive pole pipe tongue and cathode tube tongue infusion epoxy resin glue in a mold under protective atmosphere, be solidified into straw hat shape, and one end of described positive pole pipe tongue and cathode tube tongue is exposed as positive pole pin and negative pole pin.
7. method according to claim 1, is characterized in that, the protective atmosphere in described step 3 is inert gas.
8. the epoxide-resin glue the method for claim 1, wherein in described step 3 is silica gel or polymer.
9. the method for claim 1, wherein adopt solder to be welded on by the negative pole of described semiconductor laser chip on described cathode tube tongue in described step 1, described solder is golden tin, conductive silver paste or indium solder.
CN201410730192.1A 2014-12-04 2014-12-04 Pin type packaging structure and method for semiconductor laser Pending CN104377542A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107180879A (en) * 2017-04-13 2017-09-19 深圳市速腾聚创科技有限公司 Photodiode packaging device
CN107994456A (en) * 2017-11-20 2018-05-04 大连艾科科技开发有限公司 TO encapsulated lasers and gas sensor
CN112531446A (en) * 2019-09-04 2021-03-19 中国科学院上海光学精密机械研究所 Missile-borne laser module

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Publication number Priority date Publication date Assignee Title
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CN1336027A (en) * 1999-11-02 2002-02-13 奥斯兰姆奥普托半导体股份有限两合公司 Laser diode device and method for producing the same
CN103119807A (en) * 2010-09-20 2013-05-22 欧司朗光电半导体有限公司 Housing for an optoelectronic semiconductor component and semiconductor component
CN103647214A (en) * 2013-12-31 2014-03-19 中国科学院半导体研究所 Semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993075A (en) * 1997-07-15 1999-11-30 Kai-Feng Huang Vertical cavity surface-emitting laser package
CN1336027A (en) * 1999-11-02 2002-02-13 奥斯兰姆奥普托半导体股份有限两合公司 Laser diode device and method for producing the same
CN103119807A (en) * 2010-09-20 2013-05-22 欧司朗光电半导体有限公司 Housing for an optoelectronic semiconductor component and semiconductor component
CN103647214A (en) * 2013-12-31 2014-03-19 中国科学院半导体研究所 Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107180879A (en) * 2017-04-13 2017-09-19 深圳市速腾聚创科技有限公司 Photodiode packaging device
CN107994456A (en) * 2017-11-20 2018-05-04 大连艾科科技开发有限公司 TO encapsulated lasers and gas sensor
CN112531446A (en) * 2019-09-04 2021-03-19 中国科学院上海光学精密机械研究所 Missile-borne laser module

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Application publication date: 20150225