CN104332550B - COB formula LED encapsulation piece based on beryllium oxide ceramics substrate and production method - Google Patents

Abstract

The invention provides a COB LED package based on a beryllium oxide ceramic substrate and a production method thereof. The package includes a substrate made of a beryllium oxide ceramic plate, on which there are dams and two symmetrically arranged electrodes; There are a plurality of non-intersecting series circuits composed of light-emitting diodes inside, and the two ends of each series circuit are respectively connected with two electrodes, and fluorescent powder glue is solidly sealed in the dam. By cleaning beryllium oxide ceramic plates, screen printing electrodes, high-temperature sintering, making dams, baking and dehumidification, plasma cleaning, pasting LED chips, baking, bonding, baking, dotting phosphor glue in the dams and post-curing, Blanking, spectroscopic testing, packaging, warehousing and other processes to produce COB LED packages based on beryllium oxide ceramic substrates. The LED packaging part applies the beryllium oxide substrate to the LED, has good heat dissipation performance, and can meet the packaging requirements of small volume, light weight and high reliability of high-power LED packaging products.

Description

COB-type LED package and production method based on beryllium oxide ceramic substrate

technical field

The invention belongs to the technical field of semiconductor packaging for electronic device manufacturing, and relates to an LED package, in particular to a COB-type LED package based on a beryllium oxide ceramic substrate; the invention also relates to a production method of the package.

Background technique

At present, COB (Chip On Board) LED packages produced by general-purpose technology are most widely used in aluminum substrate, ceramic substrate and copper substrate packages, and the appearance specifications include 1215, 1515, 2020 and many other specifications. In COB LED packaging products, the heat dissipation performance of the product is closely related to its packaging materials, dimensions and product power, especially the selection of packaging substrates. For example, the 1215 ceramic substrate can only realize the packaging of products below 10W, and cannot package LED products with higher power. If you want to realize the packaging of products above 10W, you must use larger-sized ceramic substrates, such as 1515, 2020, etc.

With the continuous advancement of science and technology, the demand for high-power LED packaging is gradually becoming thinner and lower cost, and LED packaging technology is also gradually developing in the direction of diversification and high-density integration. How to effectively reduce the volume of high-power LED packaging products and ensure good reliability so that they can be used normally in various harsh external environments has become an urgent problem to be solved in the industry, especially in today's world where energy and materials are limited , the emergence of a high-power, small-volume LED product will produce far-reaching economic and social benefits.

Contents of the invention

The purpose of the present invention is to provide a COB LED package based on beryllium oxide ceramic substrate with small size, high power and high reliability, which has better heat dissipation performance

Another object of the present invention is to provide a method for producing the above-mentioned LED package.

In order to achieve the above object, the technical solution adopted by the present invention is: a COB LED package based on a beryllium oxide ceramic substrate, including a plurality of light-emitting diodes and a substrate made of a beryllium oxide ceramic plate; The dam, the arc-shaped first electrode and the arc-shaped second electrode are symmetrically arranged in the dam; a plurality of light-emitting diodes are arranged in the crystal-bonding area on the substrate, and all the light-emitting diodes are symmetrically distributed in a surface array, and several of them The anodes of the light-emitting diodes are respectively connected to the first electrodes, and the cathodes of several light-emitting diodes are respectively connected to the second electrodes. The number of diodes is the same; there are several light-emitting diodes in series between the cathode of a light-emitting diode whose anode is connected to the first electrode and the anode of a light-emitting diode whose cathode is connected to the second electrode. The diode, the light-emitting diode connected to the cathode and the second electrode, and several light-emitting diodes connected in series together form a series circuit. All the series circuits in the die-bonding area do not cross each other, and phosphor glue is sealed in the dam. The two electrodes and all LEDs are sealed in phosphor glue.

Another technical solution adopted by the present invention is: a method for producing a COB-type LED package based on a beryllium oxide ceramic substrate according to claim 1, characterized in that the production method is specifically carried out according to the following steps:

Step 1: cleaning the beryllium oxide ceramic plate to form a substrate;

Step 2: Place the substrate under a 300-mesh nylon screen, align the position between the substrate and the screen according to the electrode pattern, and scrape the silver paste from the screen to the surface of the substrate; at a temperature of 950°C±5°C Bake for 60 minutes, cool naturally, and complete the sintering of the electrode;

Step 3: Dispense glue on the substrate to form dam glue, put it in an oven with a temperature of 190±5°C, and bake at a constant temperature for 30 minutes to form a beryllium oxide ceramic substrate;

Step 4: dehumidifying the beryllium oxide ceramic substrate;

Step 5: Using plasma cleaning technology to clean the dehumidified beryllium oxide ceramic substrate;

Step 6: Using fully automatic die-bonding technology, fix multiple LED chips at the same time in the die-bonding area of the beryllium oxide ceramic substrate; use the array die-bonding method during die-bonding, and the thickness of the insulating glue pasting the LED chips is less than 15 μm;

Step 7: In an oven with a temperature of 50°C, raise the oven temperature from 50°C to 170°C at a rate of 4°C/min, bake at a constant temperature for 120 minutes, and then cool down to 50°C at a rate of 1.7°C/min to complete the baking bake;

Step 8: Use gold wire bonding, the bonding tension is greater than 6.6g;

Step 9: Bake for 60 minutes at a temperature of 80-85°C;

Step 10: According to the whitening requirements of the product, determine the formula of the product phosphor glue through the experimental design method, then take the packaging glue and phosphor powder according to the formula, stir and mix thoroughly to form a uniform phosphor glue, and complete the dispensing and dispensing within 45 minutes. Enter the post-curing baking of next step;

Step 11: Post Curing

Step 12: Blanking, spectroscopic testing, packaging, and warehousing to produce a COB-type LED package based on a beryllium oxide ceramic substrate.

The COB LED package based on the beryllium oxide substrate of the present invention uses beryllium oxide with high thermal conductivity (the thermal conductivity reaches 310W/(m·k)) as the substrate material, and uses screen printing and high-temperature sintering technology to complete the electrode formation on the beryllium oxide. Production, to realize the use of beryllium oxide substrate in LED, so that COB LED packaging products have good heat dissipation performance, and can meet the packaging requirements of high-power LED packaging products with small size, light weight and high reliability. In addition, COB LED products based on beryllium oxide substrates can be used normally in various harsh external environments and have good reliability.

Description of drawings

FIG. 1 is a schematic cross-sectional view of an LED package of the present invention.

FIG. 2 is a top view of FIG. 1 .

Fig. 3 is a flow chart of the production process of the LED package of the present invention.

Fig. 4 is a temperature curve diagram of post-die-bonding baking during the production process of the LED package of the present invention.

Fig. 5 is a temperature curve diagram of post-curing baking during the production process of the LED package of the present invention.

In the figure: 1. substrate, 2. first electrode, 3. dam, 4. light-emitting diode, 5. bonding wire, 6. phosphor glue, 7. second electrode.

detailed description

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

As shown in Figures 1 and 2, the LED package of the present invention includes a substrate 1, and the substrate 1 is made of a beryllium oxide (BiO) ceramic plate; a cylindrical dam 3 is arranged on the surface of the substrate 1 where the chip is arranged, and the dam 3 is symmetrically provided with an arc-shaped first electrode 2 and an arc-shaped second electrode 7. The structures of the first electrode 2 and the second electrode 7 are exactly the same, and both are silver-plated electrodes; the two electrodes face the dam 3 The side wall of the side wall is in contact with the inner wall of the dam 3; on the substrate 1, the area between the first electrode 2 and the second electrode 7 is a crystal-bonding area, and a plurality of light-emitting diodes 4 are arranged in the crystal-bonding area, and all light-emitting diodes 4 The array of diodes 4 is symmetrically distributed to form a light-emitting diode array, in which the anodes of six light-emitting diodes 4 are respectively connected to the first electrode 2 through bonding wires 5, and the cathodes of six light-emitting diodes 4 are respectively connected to each other through bonding wires 5. Connected to the second electrode 7, the six light emitting diodes 4 connected to the first electrode 2 form a one-to-one correspondence with the six light emitting diodes 4 connected to the second electrode 7, that is, one anode is connected to the first electrode 2 There are several light emitting diodes 4 connected in series between the cathode of the connected light emitting diode 4 and the anode of a light emitting diode 4 whose cathode is connected to the second electrode 7, the light emitting diode 4 connected to the first electrode 2 with the anode and the cathode connected to the second electrode 7 The light-emitting diodes 4 connected to the second electrode 7 and the several light-emitting diodes 4 connected in series together form a series circuit, and all the light-emitting diodes 4 in a series circuit are connected to each other through bonding wires 5 between two adjacent light-emitting diodes 4 . connect. There are six series circuits in the crystal-bonding area, and the six series circuits do not cross each other, and each series circuit is composed of the same number of light-emitting diodes 4; phosphor glue 6 is sealed in the dam 3, two electrodes, all The light emitting diode 4 and all the bonding wires 5 are sealed in the fluorescent powder glue 6 , and the upper surface of the phosphor powder glue 6 is recessed toward the inside of the package to form a concave surface.

The present invention also provides a method for producing the above-mentioned LED package, the process flow chart of which is shown in Figure 3, and specifically carried out according to the following steps:

Step 1: Put the beryllium oxide ceramic plate into the ceramic cleaning agent, heat it to boiling state, cook for 20 minutes, take it out, rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and then Place it in acetone solution for ultrasonic cleaning for 10 minutes, take it out, rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and finally dry it under an infrared lamp to complete cleaning and form a substrate;

Step 2: Place the substrate under the 300-mesh nylon screen, align the position between the substrate and the screen according to the electrode pattern, and ensure that the distance between the substrate and the screen is 0.1±0.01mm, use a 45° scraper to Scrape the silver paste from the screen to the surface of the substrate to complete the electrode printing; after that, bake the printed electrode substrate in a high-temperature sintering furnace at 950°C±5°C for 60 minutes, and finally take it out to cool naturally to complete the sintering of the electrode;

Step 3: After the electrode is made, the dam needs to be made according to the size and specifications of the substrate. The specific method is: set the dispensing machine to work in the circle-drawing mode, inject the dam glue into the rubber hose of the dispenser, adjust the air pressure and Dispensing time, dispensing glue on the substrate to form a cylindrical dam glue with a height of 0.6mm±0.01mm and a thickness of 1mm±0.01mm. After dispensing, put the substrate in an oven at 190±5°C and bake at a constant temperature 30 minutes to complete the fabrication of the dam and form the beryllium oxide ceramic substrate;

Step 4: Bake for 60 minutes at a temperature of 155°C±5°C to dehumidify the beryllium oxide ceramic substrate; bake and release all the water vapor in the beryllium oxide ceramic substrate to prepare for subsequent crystal bonding and dispensing;

Step 5: Use plasma cleaning technology to clean the dehumidified beryllium oxide ceramic substrate; physical cleaning method is used in plasma cleaning, and argon is used as the cleaning gas; during the cleaning process, the surface of the beryllium oxide ceramic substrate solid crystal area is fully stained In addition, the surface oxide of the silver-plated layer in the bonding area should also be cleaned to improve the bonding quality of the subsequent bonding;

Step 6: Using fully automatic die-bonding technology, fix multiple LED chips at the same time in the die-bonding area of the beryllium oxide ceramic substrate; adopt the array die-bonding method during die-bonding, and design a circuit array of N strings and M parallels according to the product parameter requirements ( That is, M series circuits set in parallel, each series circuit is composed of N LED chips in series, M and N are both integers greater than or equal to 1, and the two ends of each series circuit are respectively connected to two electrodes) , and the chip spacing in the chip array is measured and defined in detail, so that the effective light emitted by each LED chip is maximized; the thickness of the insulating glue pasting the LED chips is less than 15 μm, which ensures the shear strength of the chip bonding and can give the key Combine to leave a larger arch wire space;

Step 7: Put it in an oven with a temperature of 50°C, raise the temperature of the oven from 50°C to 170°C at a rate of 4°C/min, bake at a constant temperature for 120 minutes, and then cool down to 50°C at a rate of 1.7°C/min. Complete the entire roast;

Step 8: Since the space of the cavity surrounded by the dam is very small, and the height inside the cavity is 0.6 mm, only low-arc pressure welding technology can be used for pressure welding. For pressure welding, in order to ensure the consistency of the arc height and the length of the welding wire, gold wire bonding is generally used, and the bonding tension must be greater than 6.6g; Line, the quality of low-line arc pressure welding;

Step 9: Bake for 60 minutes at a temperature of 80-85°C;

In order to improve the dispensing quality, the LED semi-finished products should be pre-baked before dispensing; on the one hand, pre-baking is to further remove the water vapor carried by the product, mainly the water vapor absorbed during the processing; on the other hand, it is to improve The fluidity of the glue during the dispensing process allows the glue to quickly fill the cavity; when baking, place the product directly at a temperature of 80-85°C, bake at a constant temperature for 60 minutes, and then take it out immediately for dispensing;

Step 10: Dispensing Glue

The dispensing process is mainly divided into two aspects: dispensing and dispensing;

According to the whitening requirements of the product, the formulation of the product phosphor glue is determined through the experimental design method, and then the packaging glue and phosphor powder are taken according to the formula, and the packaging glue and phosphor powder are fully stirred and mixed with high-speed rotation and revolution mechanical equipment to form a uniform During the whole mixing process, the vacuum environment generated by the vacuum machine is used to suck out the air bubbles in the glue and discharge them to the outside, so that the glue can be mixed more closely;

In order to prevent the phosphor from settling, the phosphor glue must be finished dispensing and post-curing within 45 minutes; the dispensing is done on a fully automatic dispensing machine, and the semi-finished products that need dispensing are fixed on the dispensing machine, and the control point The glue head completes the product dispensing. Since the dispensing area of COB products is much larger than that of other LED products, the dispensing method of drawing circles will be used when dispensing glue, which can quickly fill the cavity with phosphor glue;

Step 11: Post Curing

Post-curing is to fully cure the glue and prevent the phosphor from settling. The post-curing work is completed by a two-step baking method combining low temperature and high temperature baking. The heating and cooling of the baking process adopts a gradient method, so that other useless gases inside the product can be released gradually, so as to ensure that the glue is fully cured, and the product has the best light. Put the product after dispensing into a curing oven with a temperature of 25°C , from 25°C to 80°C at a heating rate of 5.5°C/s, bake at a constant temperature for 1 hour, then raise the temperature to 150°C at a rate of 4.1°C/s, bake at a constant temperature for 3 hours, and finally cool down at a rate of 1.4°C/s to 80°C to complete the entire baking, as shown in Figure 5;

Step 12: Blanking, spectroscopic testing, packaging, storage

Blanking is the process of separating LED packages into individual parts. In order to ensure processing efficiency, an automatic blanking system is used for blanking; during the blanking process, the depth of the upper and lower cutting blades and the speed of the cutting blades must be set (the depth of the upper and lower cutting blades is set based on the thickness of the substrate, and the speed of the upper and lower blades The sum of the depths must be less than the thickness of the substrate (0.4±0.05mm, and the blade speed is set to 30mm/s) to prevent the substrate from cracking due to excessive force.

The spectroscopic testing process adopts the way of testing the chip by chip by the testing system. Design the corresponding test mold according to the specific specifications of the product. During the test, apply a test current to the electrodes at both ends of the package, and test its photoelectric parameters in the integrating sphere.

The packaging is taped and packed by an automatic tape machine.

After the taping is completed, store it in storage as required.

Compared with other LED products with the same power, the LED packaging part of the present invention has the characteristics of small size, light weight, excellent electrical performance and thermal performance, and the like. Taking the 1215-size substrate as an example, the substrate is 15.00±0.05mm long, 12.00±0.05mm wide, and 1.60±0.05 mm thick. Not only is the size fully compatible with the IC chip array, but the product power can reach more than 20W, which is the same size COB 3 to 5 times the power of LED packaged products.

Example 1

Put the beryllium oxide ceramic plate into the ceramic cleaning agent, heat it to boiling state and cook for 20 minutes, take it out and rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and then place it in acetone Ultrasonic cleaning in the solution for 10 minutes, after taking it out, rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and dry it under an infrared lamp to form a substrate; place the substrate on a 300-mesh nylon screen Under the plate, align the position between the substrate and the screen according to the electrode pattern to ensure that the distance between the substrate and the screen is 0.1mm, and use a 45° scraper to scrape the silver paste from the screen to the surface of the substrate to complete the electrode printing; Afterwards, bake the printed electrode substrate in a high-temperature sintering furnace at 950°C for 60 minutes, and cool naturally to complete the sintering of the electrode; set the working mode of the dispenser to draw a circle, and inject the dam glue into the rubber hose of the dispenser , dispensing glue on the substrate to form a cylindrical dam glue with a height of 0.6 mm and a thickness of 1 mm, put it in an oven at 190 ° C, and bake at a constant temperature for 30 minutes to complete the dam production and form a beryllium oxide ceramic substrate; Baking for 60 minutes at a temperature of 155°C; using plasma cleaning technology to clean the dehumidified beryllium oxide ceramic substrate; adopting automatic crystal bonding technology to simultaneously fix multiple LED chips in the crystal bonding area of the beryllium oxide ceramic substrate; Array-type die-bonding method, according to the product parameter requirements, design a circuit array of N series and M parallel, and carry out detailed measurement and definition of the chip spacing in the chip array, so as to maximize the effective light emitted by each LED chip; paste the LED chip The thickness of the insulating glue is less than 15 μm; put it into an oven with a temperature of 50°C, raise the temperature of the oven to 170°C at a rate of 4°C/min, bake at a constant temperature for 120 minutes, and cool down to 50°C at a rate of 1.7°C/min to complete the baking Baking; use gold wire bonding to ensure that the bonding tension is greater than 6.6g; when the chip and the silver-plated electrode area of the substrate are interconnected, attention should also be paid to ensuring the quality of long welding wires and low-wire arc pressure welding; at a temperature of 80°C, Baking for 60 minutes; according to the whitening requirements of the product, determine the formula of the product phosphor glue through the experimental design method, then take the packaging glue and phosphor powder according to the formula, and fully stir and mix the packaging glue and phosphor powder to form a uniform phosphor glue , during the whole mixing process, the vacuum environment generated by the vacuum machine is used to suck out the air bubbles in the glue and discharge them to the outside, so that the glue can be mixed more closely; the dispensing and post-curing baking are completed within 45 minutes; the temperature is 25 ℃ in a curing oven, the temperature was raised from 25°C to 80°C at a rate of 5.5°C/s, and after constant temperature baking for 1 hour, the temperature was raised to 150°C at a rate of 4.1°C/s, and constant temperature was baked for 3 hours, and finally at 1.4°C The temperature is lowered to 80°C at a rate of /s, and the baking is completed; blanking, spectroscopic testing, packaging, and storage; COB LED packages based on beryllium oxide ceramic substrates are produced.

Example 2

Put the beryllium oxide ceramic plate into the ceramic cleaning agent, heat it to boiling state and cook for 20 minutes, take it out and rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and then place it in acetone Ultrasonic cleaning in the solution for 10 minutes, after taking it out, rinse with cold-hot-cold deionized water alternately for 15 minutes each (hot deionized water temperature is 30°C), and dry to form a substrate; place the substrate under a 300-mesh nylon screen plate, Align the position between the substrate and the screen according to the electrode pattern, ensure that the distance between the substrate and the screen is 0.11mm, use a 45° scraper to scrape the silver paste from the screen to the surface of the substrate to complete the printing of the electrode; after that, place The printed electrode substrate is baked in a high-temperature sintering furnace at 955°C for 60 minutes, cooled naturally, and the sintering of the electrode is completed; the working mode of the dispensing machine is set to draw a circle, and the dam glue is injected into the rubber tube of the dispensing machine. Dispense glue on the substrate to form a cylindrical dam glue with a thickness of 0.61mm and 1.01mm, put it in an oven at 195°C, and bake it at a constant temperature for 30 minutes to complete the dam production and form a beryllium oxide ceramic substrate; Bake at high temperature for 60 minutes to dehumidify; use plasma cleaning technology to clean the dehumidified beryllium oxide ceramic substrate; adopt automatic crystal bonding technology to fix multiple LED chips in the crystal bonding area of the Array-type die-bonding method, according to the product parameter requirements, design a circuit array of N series and M parallel (that is, M series circuits set in parallel, each series circuit is composed of N LED chips in series, and both M and N are greater than Integer equal to 1, the two ends of each series circuit are respectively connected to two electrodes), the thickness of the insulating glue pasted with the LED chip is less than 15 μm; put it into an oven with a temperature of 50°C, and make the oven temperature at 4°C/min The rate is raised from 50°C to 170°C, baked at a constant temperature for 120 minutes, and then cooled to 50°C at a rate of 1.7°C/min to complete the baking; gold wire bonding is used to ensure that the bonding tension is greater than 6.6g; the chip and the substrate are plated with silver When interconnecting electrode areas, attention should also be paid to ensure the quality of long welding wires and low-wire arc pressure welding; bake for 60 minutes at a temperature of 80-85°C; determine the phosphor powder of the product through the test design method according to the whitening requirements of the product glue formula, and then take the encapsulation glue and phosphor powder according to the formula, fully stir and mix to form a uniform phosphor powder glue, complete dispensing and post-curing baking within 45 minutes; in a curing oven with a temperature of 25°C, 5.5°C/s heating rate from 25°C to 80°C, after constant temperature baking for 1 hour, then at a rate of 4.1°C/s to 150°C, constant temperature baking for 3 hours, and finally cooling to 80°C at a rate of 1.4°C/s ℃ to complete the entire baking; blanking, spectroscopic testing, packaging, and storage to prepare COB LED packages based on beryllium oxide ceramic substrates.

Example 3

Put the beryllium oxide ceramic plate into the ceramic cleaning agent, heat it to boiling state and cook for 20 minutes, take it out and rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and then place it in acetone Ultrasonic cleaning in the solution for 10 minutes, after taking it out, rinse it alternately with cold-hot-cold deionized water for 15 minutes each (the temperature of hot deionized water is 30°C), and finally dry it under an infrared lamp to complete cleaning and form a substrate; place the substrate in Under the 300-mesh nylon screen, align the position between the substrate and the screen according to the electrode pattern, and ensure that the distance between the substrate and the screen is 0.99mm, use a 45° scraper to scrape the silver paste from the screen to the substrate The electrode is printed on the surface; after that, bake the substrate with the printed electrode in a high-temperature sintering furnace at 945°C for 60 minutes, and cool naturally to complete the sintering of the electrode; set the working mode of the dispenser to draw a circle The glue is injected into the rubber tube of the glue dispenser, and glue is dispensed on the substrate to form a cylindrical dam glue with a height of 0.59 mm and a thickness of 0.99 mm. In an oven at 185°C, bake at a constant temperature for 30 minutes to complete the dam production and form Beryllium oxide ceramic substrate; at a temperature of 155°C±5°C, bake for 60 minutes to dehumidify the beryllium oxide ceramic substrate;

Use plasma cleaning technology to clean the dehumidified beryllium oxide ceramic substrate; adopt automatic crystal bonding technology to fix multiple LED chips in the crystal bonding area of the beryllium oxide ceramic substrate at the same time; adopt array type crystal bonding method during crystal bonding, according to product parameter requirements , design a circuit array of N series and M parallel (that is, M series circuits set in parallel, each series circuit is composed of N LED chips in series, M and N are integers greater than or equal to 1, and the number of each series circuit The two ends are respectively connected to two electrodes), and the thickness of the insulating glue for pasting the LED chip is less than 15 μm; put it into an oven at a temperature of 50°C, and raise the temperature of the oven from 50°C to 170°C at a rate of 4°C/min. After baking for 120 minutes, cool down to 50°C at a rate of 1.7°C/min to complete the entire baking; use gold wire bonding to ensure that the bonding tension is greater than 6.6g; when interconnecting the chip and the silver-plated electrode area of the substrate, also Pay attention to ensure the quality of long welding wire and low-wire arc pressure welding; bake for 60 minutes at a temperature of 80-85°C; determine the formula of the product phosphor glue through the experimental design method according to the whitening requirements of the product, and then press the formula Take the encapsulation glue and phosphor, stir and mix thoroughly to form a uniform phosphor glue; complete dispensing and post-curing baking within 45 minutes; put the dispensed product into a curing oven at a temperature of 25°C, and heat at 5.5 The heating rate of ℃/s is from 25 ℃ to 80 ℃, after constant temperature baking for 1 hour, then the temperature is raised to 150 ℃ at the rate of 4.1 ℃/s, the constant temperature is baked for 3 hours, and finally the temperature is lowered to 80 ℃ at the rate of 1.4 ℃/s , to complete the entire baking; blanking, spectroscopic testing, packaging, and storage; to prepare COB LED packages based on beryllium oxide ceramic substrates.

Claims (6)

1. A production method based on the COB type LED package of beryllium oxide ceramic substrate, it is characterized in that, this production method is specifically carried out according to the following steps: Step 1: cleaning the beryllium oxide ceramic plate to form a substrate; Step 2: Place the substrate under a 300-mesh nylon screen, align the position between the substrate and the screen according to the electrode pattern, and scrape the silver paste from the screen to the surface of the substrate; at a temperature of 950°C±5°C Bake for 60 minutes, cool naturally, and complete the sintering of the electrode; Step 3: Dispense glue on the substrate to form dam glue, put it in an oven with a temperature of 190±5°C, and bake at a constant temperature for 30 minutes to form a beryllium oxide ceramic substrate; Step 4: dehumidifying the beryllium oxide ceramic substrate; Step 5: Using plasma cleaning technology to clean the dehumidified beryllium oxide ceramic substrate; Step 6: Using fully automatic die-bonding technology, fix multiple LED chips at the same time in the die-bonding area of the beryllium oxide ceramic substrate; use the array die-bonding method during die-bonding, and the thickness of the insulating glue pasting the LED chips is less than 15 μm; Step 7: In an oven with a temperature of 50°C, raise the oven temperature from 50°C to 170°C at a rate of 4°C/min, bake at a constant temperature for 120 minutes, and then cool down to 50°C at a rate of 1.7°C/min to complete the baking bake; Step 8: Use gold wire bonding, the bonding tension is greater than 6.6g; Step 9: Bake for 60 minutes at a temperature of 80-85°C; Step 10: According to the whitening requirements of the product, determine the formula of the product phosphor glue through the experimental design method, then take the packaging glue and phosphor powder according to the formula, stir and mix thoroughly to form a uniform phosphor glue, and complete the dispensing and dispensing within 45 minutes. Enter the post-curing baking of next step; Step 11: post curing; Step 12: Blanking, spectroscopic testing, packaging, and warehousing to produce a COB-type LED package based on a beryllium oxide ceramic substrate. 2. The method for producing COB LED packages based on beryllium oxide ceramic substrates according to claim 1, characterized in that, in the step 2, the distance between the substrate and the screen is 0.1±0.01mm. 3. The method for producing a COB-type LED package based on a beryllium oxide ceramic substrate according to claim 1, wherein in said step 3, the height of the dam glue is 0.6mm±0.01mm, and the thickness is 1mm± 0.01mm. 4. The method for producing a COB-type LED package based on a beryllium oxide ceramic substrate according to claim 1, characterized in that, in said step 4, at a temperature of 155°C±5°C, bake for 60min to prevent oxidation Beryllium ceramic substrate for dehumidification. 5. The method for producing a COB-type LED package based on a beryllium oxide ceramic substrate according to claim 1, characterized in that, in step 11, in a curing oven with a temperature of 25°C, at a rate of 5.5°C/s The heating rate is raised from 25°C to 80°C, after constant temperature baking for 1 hour, then the temperature is raised to 150°C at a rate of 4.1°C/s, baked at a constant temperature for 3 hours, and finally cooled to 80°C at a rate of 1.4°C/s, and then cured after completion . 6. the production method of the COB type LED package based on beryllium oxide ceramic substrate according to claim 1, is characterized in that, in described step 12, in blanking process, the sum of the depth of upper blade and lower blade is less than The substrate thickness is 0.4±0.05mm, and the blade rotation speed is 30r/s.