CN104332396A - Method for introducing batch production of heterotype medium-current ion implanters - Google Patents
Method for introducing batch production of heterotype medium-current ion implanters Download PDFInfo
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- CN104332396A CN104332396A CN201410440502.6A CN201410440502A CN104332396A CN 104332396 A CN104332396 A CN 104332396A CN 201410440502 A CN201410440502 A CN 201410440502A CN 104332396 A CN104332396 A CN 104332396A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000010923 batch production Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 238000002347 injection Methods 0.000 claims abstract description 84
- 239000007924 injection Substances 0.000 claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000002513 implantation Methods 0.000 claims description 35
- 238000005468 ion implantation Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 4
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 11
- 238000005859 coupling reaction Methods 0.000 description 11
- 230000013011 mating Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Analytical Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a method for introducing batch production of heterotype medium-current ion implanters. Through a variable injection silicon chip method which is already applied in practice, dose matching of novel medium-current ion implanters and old medium-current ion implanters is carried out so that hundreds of silicon chips can be saved and thus reduction of production cost is realized; and at the same time, production time is also saved and thus production efficiency and economical benefit are improved.
Description
Technical field
The present invention relates to semiconductor applications, be specifically related to a kind of method special-shaped medium current ion implanter being imported volume production.
Background technology
In middle current implanter field, due to the difference of scan mode and scanning hardware system, can there are differences between different vendor or different platform model, topmost difference is embodied in the inconsistent and dosage mismatch of implant angle.
In order to the flexibility of production capacity allotment can be strengthened, the angle automatching between special-shaped board and dosage coupling must be done.In actual match process, implant angle can use the method for U-shaped curve, is corrected to the precision within 0.1 degree.The coupling then more complicated of dosage, because inject source kind, energy, dosage for difference, matching factor is not quite identical, so need the injection condition used needed for each to carry out dosage coupling separately.
The measuring value of square resistance can calculate the matching factor between special-shaped board, then on novel airframe, arranges corresponding injection condition according to the matching factor of gained, then does the checking of the unit for electrical property parameters of product.When doing the coupling between square resistance, traditional method uses Novel ion to inject board to inject three pieces of different silicon chips of matching factor, and also namely implantation dosage is novel board setting dosage.Such as the implantation dosage of these three pieces of silicon chips is respectively X, Y, Z, and X > Y > Z, after this these three pieces of silicon chips are annealed and surveyed square resistance.Use legacy ion injection machine table to inject one piece of silicon chip that matching factor is Y, utilize this silicon chip to inject and square resistance after annealing, corresponding to matching factor is that the codomain of X, Y, Z is interval, thus obtains the matching factor that point-like ion injection machine table should arrange.
Need four pieces of silicon chips because each needs do the product condition of mating, a large amount of coupling work makes total consumption of silicon chip reach number up to a hundred easily, with high costs.
Summary of the invention
The present invention provides a kind of method special-shaped medium current ion implanter being imported volume production according to prior art, comprises the steps;
There is provided the first silicon chip, in silicon chip, definition has injection region, center and is positioned at these both sides, injection region, center and about at least two injection regions of this center symmetry;
The first ion implantation device is adopted to carry out ion implantation to each injection region, and ensure that the implantation dosage being positioned at injection region to the injection region being positioned at injection region, center opposite side of side, injection region, center increases progressively gradually, and after having injected, obtain the resistance value of each injection region of silicon chip;
Second silicon chip is provided, adopts the second ion implantation device to carry out ion implantation to this second silicon chip, and the dosage injected is identical with the implantation dosage of the center of described first silicon chip, obtains the resistance value of this silicon chip;
According to the implantation dosage of the first each injection region of silicon chip and the implantation dosage of resistance value and the second silicon chip and resistance value, try to achieve when replacing the second ion implantation device to carry out ion implantation the first ion implantation device, selected best implantation dosage.
Above-mentioned method, wherein, described first silicon chip comprises injection region, center, and is positioned at these both sides, injection region, center and about the first injection region of this center symmetry and the second injection region.
Above-mentioned method, wherein, it is 0.9:1:1.1 that described first injection region deviates from the implantation dosage ratio that injection region, described center opposite side, injection region, center and the second injection region deviate from injection region, described center opposite side.
Above-mentioned method, wherein, by scanning the resistance obtaining the described first each injection region of silicon chip and the second silicon chip to described first silicon chip and the second silicon chip.
Above-mentioned method, wherein, when scanning the first silicon chip, drawing a contour line according to the implantation dosage of each described injection region and position, and scanning the first silicon chip according to this contour on the first silicon chip.
Above-mentioned method, wherein, does 49 contour scannings, to obtain the resistance value of described first silicon chip in each described injection region to described first silicon chip.
Above-mentioned method, wherein, after carrying out ion implantation to described first silicon chip and the second silicon chip, also comprises an annealing process.
Above-mentioned method, wherein, described first silicon chip and described second silicon chip are pure undoped silicon chip.
The present invention effectively can save the use amount of the silicon chip when mating board, at least used by conventional art three silicon chips to be reduced to and only use a slice silicon chip, also can not have any impact to the optimal parameter of coupling simultaneously, and then greatly reduce production cost, can mate special-shaped board sooner simultaneously and utilize the novel medium current ion implanter after mating to produce, improve production efficiency and economic benefit.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more obvious.Mark identical in whole accompanying drawing indicates identical part.Deliberately proportionally do not draw accompanying drawing, focus on purport of the present invention is shown.
Fig. 1 is that a silicon chip is divided into the schematic diagram of 3 injection regions by the present invention;
Fig. 2 carries out the ion implantation of various dose for the present invention respectively to an injection region, 3 shown in Fig. 1 and carries out the schematic diagram of contour scanning;
Fig. 3 is the corresponding engineering drawing that the present invention adopts on novel medium current ion implanter and in legacy, current implanter carries out obtained experimental data after ion implantation.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, to explain technical scheme of the present invention.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other execution modes.
The invention provides a kind of method special-shaped medium current ion implanter being imported volume production, comprise the steps.
Step 1, first provide the first silicon chip (or claim wafer, wafer), in silicon chip, definition has injection region, center and is positioned at these both sides, injection region, center and about at least two injection regions of this center symmetry.
With reference to shown in Fig. 1, the present invention one preferably but in the execution mode do not limited to, first silicon chip can be divided into center A0 and be positioned at these both sides, injection region, center and about two injection regions of this center symmetry, be i.e. the first injection region A1 and the second injection region A2.This first silicon chip is pure undoped silicon chip simultaneously.
Step 2, the first ion implantation device is adopted to carry out ion implantation to each injection region, and ensure that the implantation dosage being positioned at injection region to the injection region being positioned at injection region, center opposite side of side, injection region, center increases progressively gradually, and after having injected, obtain the resistance value of each injection region of silicon chip.
In this step, adopt a novel middle current implanter to carry out ion implantation to whole first silicon chip, the type variable function of injecting that this novel middle current implanter has, the gradually changeable gradient distribution of implantation dosage can be realized on one piece of silicon chip.Utilize this characteristic, the implantation dosage that can be implemented in the first injection region A1 → A0 → the second injection region, injection region, center A2 successively decreases gradually.In an embodiment of the present invention, it is 0.9:1:1.1 that first injection region A1 deviates from the implantation dosage ratio that injection region, described center A0 opposite side, injection region, center A0 and the second injection region A2 deviate from injection region, described center A0 opposite side, with reference to shown in Fig. 2, can be considered 90%, 100%, the implantation dosage of 110% is distributed in the lower end of silicon chip, center and upper end uniformly successively, and successively decreases gradually to the implantation dosage at upper end position place in lower end.
After completing injection to the position of the first silicon chip, need to carry out an annealing in process, and carry out the square resistance that scans to record silicon chip position.In the present invention, by scanning the square resistance obtaining the first each injection region of silicon chip to the first silicon chip, and when scanning the first silicon chip, draw a contour line on the first silicon chip according to the implantation dosage of each injection region and position, and according to this contour, the first silicon chip is scanned, with reference to shown in Fig. 2, due in injection process, ion implantation angle also can cause certain influence to the ion dose distribution in silicon chip, therefore also needs when data analysis to consider that the contour that the corner element of injection condition causes tilts.In this embodiment, use the scanning of 49 contours when carrying out scanning square resistance, namely draw a contour line on the first silicon chip according to the implantation dosage injection phase of each injection region, and choose 49 positions, place and record resistance.
Step 3, provide the second silicon chip, adopt the second ion implantation device to carry out ion implantation to this second silicon chip, and the dosage injected is identical with the implantation dosage of the center of described first silicon chip, obtains the resistance value of this silicon chip.
In this step, current implanter in legacy is adopted to carry out ion implantation to the second silicon chip, because this implanter is legacy machine, the manufacture of semiconductor demand of Highgrade integration and automation cannot be met, the precision of therefore enhancing productivity further and injecting, needs current implanter in legacy to replace with novel middle current implanter.But before current implanter in legacy is replaced with novel middle current implanter, first to carry out a check and correction step, to obtain the dosage matching factor of novel middle current implanter the best, thus because equipment changes, adverse effect is caused to product after avoiding utilizing novel middle current implanter.Because the implantation dosage coefficient of the center of the first silicon chip is in step s 21, therefore utilize current implanter in legacy to carry out indifference ion implantation to the position of the second silicon chip, also namely the implantation dosage of the second silicon chip position is 1.And after injection completes, same carrying out once is annealed and measures the step of square resistance.Because the implantation dosage of the second silicon chip position is all identical, therefore the resistance value of position is also identical, and therefore when to the second silicon chip measuring resistance, resistance measurement is carried out in an optional position.
Step 4, according to the implantation dosage of the first each injection region of silicon chip and the implantation dosage of resistance value and the second silicon chip and resistance value try to achieve replace the second ion implantation device to carry out ion implantation the first ion implantation device time, selected best implantation dosage.
Table 1
Table 1 describes and to use in type variable injection method and legacy when current implanter using monolithic injection method on novel medium current ion implanter, the one group of experimental data obtained.Set up a coordinate system according to above-mentioned data, with reference to shown in Fig. 3, abscissa is the matching factor of implantation dosage, and ordinate is the square resistance recording position; Solid line representative for adopt novel medium current ion implanter time, the matching factor of implantation dosage and the tendency chart of square resistance, represented by dotted arrows for employing legacy medium current ion implanter time, the matching factor of implantation dosage and the tendency chart of square resistance.Can be easy to draw after legacy medium current ion implanter is replaced to novel medium current ion implanter according to above-mentioned condition, the best implantation dosage that novel medium current ion implanter should be selected.The present invention's prior art of comparing saves a large amount of coupling silicon chips, conventional art needs at least to adopt 4 silicon chips to carry out the coupling of special-shaped medium current ion implanter, and the present invention only needs to adopt two panels silicon chip can realize the coupling of special-shaped medium current ion implanter, therefore conventional art of comparing saves silicon chip over half, effectively reduces production cost; The coupling that simultaneously can realize special-shaped board on a slice silicon chip also saves the production time greatly, can mate special-shaped board sooner and utilize the novel medium current ion implanter after mating to produce, improve production efficiency and economic benefit.
In sum, owing to present invention employs as above technical scheme, silicon chip method is injected by the type variable that will have applied in reality, carry out the dosage coupling between novel medium current ion implanter and legacy medium current ion implanter, up to a hundred pieces of silicon chips can be saved, realize the reduction of production cost, also save the production time simultaneously, and then improve production efficiency and economic benefit.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. special-shaped medium current ion implanter is imported a method for volume production, it is characterized in that, comprise the steps;
There is provided the first silicon chip, in silicon chip, definition has injection region, center and is positioned at these both sides, injection region, center and about at least two injection regions of this center symmetry;
The first ion implantation device is adopted to carry out ion implantation to each injection region, and ensure that the implantation dosage being positioned at injection region to the injection region being positioned at injection region, center opposite side of side, injection region, center increases progressively gradually, and after having injected, obtain the resistance value of each injection region of silicon chip;
Second silicon chip is provided, adopts the second ion implantation device to carry out ion implantation to this second silicon chip, and the dosage injected is identical with the implantation dosage of the center of described first silicon chip, obtains the resistance value of this silicon chip;
According to the implantation dosage of the first each injection region of silicon chip and the implantation dosage of resistance value and the second silicon chip and resistance value, try to achieve when replacing the second ion implantation device to carry out ion implantation the first ion implantation device, selected best implantation dosage.
2. the method for claim 1, is characterized in that, described first silicon chip comprises injection region, center, and is positioned at these both sides, injection region, center and about the first injection region of this center symmetry and the second injection region.
3. method as claimed in claim 2, is characterized in that, it is 0.9:1:1.1 that described first injection region deviates from the implantation dosage ratio that injection region, described center opposite side, injection region, center and the second injection region deviate from injection region, described center opposite side.
4. the method for claim 1, is characterized in that, by scanning the resistance obtaining the described first each injection region of silicon chip and the second silicon chip to described first silicon chip and the second silicon chip.
5. the method as described in claim 3 or 4, it is characterized in that, when scanning the first silicon chip, drawing a contour line on described first silicon chip according to the implantation dosage of each described injection region and injection phase, and according to this contour, the first silicon chip being scanned.
6. the method as described in claim 3 or 4, is characterized in that, does 49 contour scannings, to obtain the resistance value of described first silicon chip in each described injection region to described first silicon chip.
7. the method for claim 1, is characterized in that, after carrying out ion implantation to described first silicon chip and the second silicon chip, also comprises an annealing process.
8. the method for claim 1, is characterized in that, described first silicon chip and described second silicon chip are pure undoped silicon chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410440502.6A CN104332396A (en) | 2014-09-01 | 2014-09-01 | Method for introducing batch production of heterotype medium-current ion implanters |
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| CN201410440502.6A CN104332396A (en) | 2014-09-01 | 2014-09-01 | Method for introducing batch production of heterotype medium-current ion implanters |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158607A (en) * | 2016-06-30 | 2016-11-23 | 上海华力微电子有限公司 | A kind of accuracy control method of ion implantation technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158607A (en) * | 2016-06-30 | 2016-11-23 | 上海华力微电子有限公司 | A kind of accuracy control method of ion implantation technology |
| CN106158607B (en) * | 2016-06-30 | 2018-12-18 | 上海华力微电子有限公司 | A kind of accuracy control method of ion implantation technology |
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Application publication date: 20150204 |