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CN104245203B - 接合方法、电子装置的制造方法和电子部件 - Google Patents

接合方法、电子装置的制造方法和电子部件 Download PDF

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Publication number
CN104245203B
CN104245203B CN201380012347.1A CN201380012347A CN104245203B CN 104245203 B CN104245203 B CN 104245203B CN 201380012347 A CN201380012347 A CN 201380012347A CN 104245203 B CN104245203 B CN 104245203B
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metal
melting
alloy
low
metal parts
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CN104245203A (zh
Inventor
中野公介
高冈英清
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0211—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in cutting
    • B23K35/0216—Rods, electrodes, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
    • B23K35/0261—Rods, electrodes, wires
    • B23K35/0266—Rods, electrodes, wires flux-cored
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/222—Non-consumable electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/046—Surface mounting
    • H05K13/0465—Surface mounting by soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
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    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract

本发明提供一种在确保充分的接合强度的同时将第1金属部件和第2金属部件接合且能抑制、防止温阶连接的再回流焊等阶段中的接合材料流出的接合方法等。在将由第1金属构成的第1金属部件(11a)和由第2金属构成的第2金属部件(11b)介由含有比第1和/或第2金属熔点低的低熔点金属的接合材料(10)进行接合时，使构成接合材料的低熔点金属为Sn或含Sn合金，第1和第2金属中的至少一方为会与构成接合材料的低熔点金属之间生成金属间化合物12的金属或合金，在将接合材料配置在第1金属部件和第2金属部件之间的状态下，在上述低熔点金属熔融的温度下进行热处理。

Description

接合方法、电子装置的制造方法和电子部件
技术领域
本发明涉及接合方法、电子装置的制造方法和电子部件，更详细地，涉及例如在安装电子部件时等情况中使用的接合方法、电子装置的制造方法和电子部件。
背景技术
在安装电子部件时，使用焊料(焊膏)的接合方法得到广泛使用。
然而，对于以往广泛使用的Sn-Pb系焊料而言，广泛使用温阶连接的方法，即，使用例如富Pb的Pb-5Sn(熔点：314～310℃)、Pb-10Sn(熔点：302～275℃)等作为高温系焊料，在330～350℃的温度下进行焊接，然后，使用例如低温系焊料的Sn-37Pb共晶(183℃)等，在上述高温系焊料的熔点以下的温度下进行焊接，由此在先前的焊接所使用的高温系焊料不熔解的情况下，通过焊接进行连接。
这种温阶连接用于将芯片装片的类型的半导体装置、进行倒装芯片连接的类型的半导体装置等，是在半导体装置的内部利用焊接进行连接后，进一步将该半导体装置自身利用焊接与基板连接的这样的情况下使用的重要技术。
作为该用途中使用的焊膏，例如有人提出了一种包含(a)Cu、Al、Au、Ag等第2金属或由含有这些金属的高熔点合金构成的第2金属(或合金)球和(b)由Sn或In构成的第1金属球的混合体的焊膏(可参见专利文献1)。
此外，该专利文献1中公开了使用焊膏的接合方法、电子设备的制造方法。
使用该专利文献1的焊膏进行焊接时，如图2(a)示意所示，含有低熔点金属(例如Sn)球51、高熔点金属(例如Cu)球52和助焊剂53的焊膏被加热而发生反应，焊接后，如图2(b)所示，多个高熔点金属球52介由在来自低熔点金属球的低熔点金属和来自高熔点金属球的高熔点金属之间形成的金属间化合物54被连结，通过该连结体，接合对象物被连接和连结(焊接)。
然而，在用该专利文献1的焊膏进行接合的方法中，在焊接工序中对焊膏进行加热，以生成高熔点金属(例如Cu)与低熔点金属(例如Sn)的金属间化合物，但在Cu(高熔点金属)与Sn(低熔点金属)的组合中，作为低熔点金属的Sn因其扩散速度慢而残留。而且，Sn残留时，高温下的接合强度会大幅降低，根据想要接合的产品的种类，有时会无法使用。此外，存在在焊接工序中残留的Sn在之后的其他焊接工序中熔融、流出之虞，作为在温阶连接中使用的高温焊料，存在可靠性低的问题。
即，例如在半导体装置的制造工序中，经过进行焊接的工序制造半导体装置后，想用回流焊的方法将该半导体装置安装到基板上时，会有在半导体装置制造工序中的焊接工序中残留的Sn在回流焊工序中熔融、流出之虞。
此外，要使低熔点金属完全成为金属间化合物，使Sn不残留，在焊接工序中，需要高温且长时间的加热，但还要兼顾生产效率，因而实际上不可实用。
此外，使用专利文献1的焊膏时，如图3所示，在回流焊后的接合对象物61、62和接合材料(焊料)63的界面上，例如呈层状地形成Cu3Sn、Cu6Sn5之类的金属间化合物64。当这种层状的金属间化合物64形成时，由于应力会集中在界面，因而，因裂缝的产生等，界面的接合强度会降低。
专利文献：
专利文献1：日本特开2002-254194号公报
发明内容
本发明是为了解决上述问题而作出的，旨在提供能够在确保充分的接合强度的同时接合第1金属部件和第2金属部件且能够抑制、防止接合材料在温阶连接的再回流焊等阶段中流出的接合方法、电子装置的制造方法和电子部件。
为了解决上述课题，本发明的接合方法为将具有第1金属的第1金属部件和具有第2金属的第2金属部件用以熔点低于所述第1金属和/或所述第2金属的低熔点金属为主要成分的接合材料进行接合用的接合方法，其特征在于，
构成所述接合材料的所述低熔点金属为Sn或含Sn合金，
所述第1金属和所述第2金属中的至少一方以Cu-Al合金和/或Cu-Cr合金为主要成分，
并且具有以下热处理工序：在将所述接合材料配置在所述第1金属部件和第2金属部件之间的状态下，在构成所述接合材料的所述低熔点金属会熔融的温度下进行热处理，由此，介由含有通过构成所述接合材料的低熔点金属与构成所述第1金属和/或构成所述第2金属的所述Cu-Al合金和/或Cu-Cr合金的反应而生成的金属间化合物的接合部，将所述第1金属部件和所述第2金属部件接合。
另外，在本发明的接合方法中，通常，优选上述Cu-Al合金在5～30重量％的范围内含有Al，上述Cu-Cr合金以5～30重量％的比例含有Cr。
此外，本发明的电子装置的接合方法是具有第1金属部件和所述第2金属部件接合的结构的电子装置的制造方法，所述第1金属部件具有第1金属，所述第2金属部件具有第2金属，所述制造方法的特征在于，
具有用所述本发明的接合方法将所述第1金属部件和所述第2金属部件接合的工序。
此外，本发明的电子部件是具有电极的电子部件，该电极用于用含有由Sn或含Sn合金构成的低熔点金属的接合材料进行的接合，所述电子部件的特征在于，
与所述接合材料相接的所述电极具有Cu-Al合金和/或Cu-Cr合金。
在本发明的接合方法中，在介由含有比第1金属和第2金属中的至少一方熔点低的低熔点金属的接合材料将具有第1金属的第1金属部件和具有第2金属的第2金属部件接合时，使构成接合材料的低熔点金属为Sn或含Sn合金，使第1金属和第2金属中的至少一方以Cu-Al合金和/或Cu-Cr合金为主要成分，并在将接合材料配置在第1金属部件和第2金属部件之间的状态下，在构成接合材料的低熔点金属熔融的温度下进行热处理，从而生成含有通过构成接合材料的低熔点金属(Sn或含Sn合金)与构成第1金属和/或第2金属的Cu-Al合金和/或Cu-Cr合金的反应而生成的金属间化合物的接合部，介由该接合部，能切实地接合第1金属部件和第2金属部件。其结果，能得到耐热性、耐热冲击性优异的、可靠性高的接合结构。
即，根据本发明的接合方法，在将接合材料配置在第1金属部件和第2金属部件之间进行热处理的工序中，低熔点金属与第1金属和/或第2金属反应而生成金属间化合物，结果，第1金属和/或第2金属向低熔点金属的相互扩散飞跃式地进行，促进向更高熔点的金属间化合物的变化。因此，能够进行耐热强度大且具有充分的接合强度、耐冲击性的接合。
另外，由于构成第1和/或第2金属(Cu合金)的Al和Cr与Cu相比，第1离子化能均小，这些金属(Al、Cr)固溶在Cu中，因而，与Cu相比，Al、Cr先被氧化。其结果，未被氧化的Cu向熔融的低熔点金属(Sn或含Sn合金)的扩散得到促进，在非常短的时间内，与低熔点金属之间生成金属间化合物。因此，与该部分对应，接合部中的低熔点金属的含量会降低，接合部的熔点上升，耐热强度提高。
即，在使用接合材料接合第1金属部件和第2金属部件时，在使接合材料位于第1和第2金属部件间的状态下进行热处理。此时，温度达到构成接合材料的低熔点金属(Sn或含Sn合金)的熔点以上时，低熔点金属熔融。而且，第1金属和/或第2金属与熔融的低熔点金属迅速扩散，生成金属间化合物。
若之后进一步继续加热，则低熔点金属与第1和/或第2金属进一步反应，在低熔点金属以及第1金属和/或第2金属的组成比等处于适宜条件的情况下，低熔点金属基本上全部变成金属间化合物，能得到接合部的耐热性优异的接合结构。
此外，从使构成接合材料的低熔点金属(Sn或含Sn合金)与第1金属和/或第2金属迅速反应、生成金属间化合物的角度考虑，优选第1金属部件和/或第2金属部件的表面由以Cu-Al合金和/或Cu-Cr合金为主要成分的金属构成。
根据本发明的接合方法，例如当第1金属部件为电子部件的外部电极、第2金属部件为基板的安装用电极时，在焊接安装电子部件后的阶段，在实施了多次回流焊的情况下，以及在安装的电子部件(例如车载用电子部件)在高温环境下使用的情况下，均能防止接合部再熔融，进行不会引起电子部件脱落等的、高温下的接合可靠性高的接合。
此外，在本发明的接合方法中，在将接合材料配置在第1金属部件和第2金属部件之间的状态下，在构成接合材料的低熔点金属熔融的温度下进行热处理，由此进行第1金属部件和第2金属部件的接合，作为进行这种接合(热处理)的具体方式，例如可举出：
1)第1金属和第2金属就是构成要使它们相互接合的第1金属部件和第2金属部件的金属材料本身，且其中的至少一方为Cu-Al合金和/或Cu-Cr合金，低熔点金属作为焊膏、板状焊料等的构成材料被供给到第1金属部件和第2金属部件之间的方式；
2)第1金属和第2金属为构成在要使它们相互接合的第1金属部件(电极主体)和第2金属部件(电极主体)表面上形成的镀膜的金属材料，且其中的至少一方为Cu-Al合金和/或Cu-Cr合金，低熔点金属作为焊膏、板状焊料等的构成材料被供给到具有镀膜的第1金属部件和第2金属部件的表面之间的方式；等。
此外，在本发明的接合方法中，在(a)构成接合材料的低熔点金属与(b)第1金属和第2金属中Cu-Al合金和Cu-Cr合金的合计量(即(a)与(b)的合计量)中的后者(b)的比例在30体积％以上的状态下实施热处理工序，由此，第1金属和第2金属(Cu-Al合金、Cu-Cr合金)向构成接合材料的低熔点材料的扩散充分进行，促进向更高熔点的金属间化合物的变化，低熔点金属成分基本不残留，因此，能够进一步进行耐热强度大的接合。
此外，“……后者的比例在30体积％以上的状态”是指下述式(1)所表示的状态。
[(第1金属+第2金属)/{低熔点金属+(第1金属+第2金属)}]×100≥30(体积％)……(1)
此外，在本发明的电子装置的制造方法中，在制造具有由第1金属构成的第1金属部件和由第2金属构成的第2金属部件的电子装置时，利用上述本发明的接合方法接合第1金属部件和第2金属部件，从而能够高效率地制造介由接合材料将第1金属部件和第2金属部件切实地接合的可靠性高的电子装置。
此外，本发明电子部件是具有电极的电子部件，该电极被用于用含有由Sn或含Sn合金构成的低熔点金属的接合材料进行的接合，在该电子部件中，电极具有Cu-Al合金或Cu-Cr合金，因而适合用于本发明的接合方法，能提供可高效率地进行可靠性高的安装的电子部件。
即，例如，载置本发明的电子部件，使其电极与基板上的加了焊膏的安装用电极相向，进行回流焊，由此能将电子部件的电极和基板的安装用电极介由以通过接合材料中所含的低熔点金属与Al合金或Cu-Cr合金的反应而生成的金属间化合物为主要成分的接合部切实地接合，进行可靠性高的安装。
附图说明
图1是示意性地显示用本发明实施例的接合方法进行接合时的性状的图，(a)是显示加热前的状态的图，(b)是显示加热开始、接合材料熔融后的状态的图，(c)是显示进一步继续加热、有构成接合材料的低熔点金属与第1金属部件和第2金属部件中的至少一方之间的金属间化合物形成的状态的图。
图2是显示使用现有的焊料进行焊接时的焊料性状的图，(a)是显示加热前的状态的图，(b)是显示焊接工序结束后的状态的图。
图3是显示使用现有的焊料进行接合时界面上形成了层状的金属间化合物层的接合结构的图。
具体实施方式
下面显示本发明的实施方式，对本发明的特征进行更详细的说明。
<实施方式1>
在该实施方式1中，如图1(a)～(c)所示，将由第1金属构成的第1金属部件11a和由第2金属构成的第2金属部件11b用以熔点比第1金属和第2金属低的低熔点金属为主要成分的接合材料10接合。
在该实施方式1中，作为构成接合材料的低熔点金属，如表1的试样编号1～13所示，使用了Sn-3Ag-0.5Cu、Sn、Sn-3.5Ag、Sn-0.75Cu、Sn-0.7Cu-0.05Ni、Sn-5Sb、Sn-2Ag-0.5Cu-2Bi、Sn-3.5Ag-0.5Bi-8In、Sn-9Zn、Sn-8Zn-3Bi。
另外，在构成上述接合材料的低熔点金属的标记中，例如“Sn-3Ag-0.5Cu”表示，低熔点金属材料是含有Ag 3重量％、Cu 0.5重量％、其余部分为Sn的合金(Sn合金)。
此外，如表1的试样编号1～10所示，作为第1金属部件和第2金属部件，使用了由Cu-10Al构成的部件。
此外，为了进行比较，如表1的试样编号1～13所示，作为第1金属部件和第2金属部件，准备了由Cu(试样编号11)、Cu-10Zn(试样编号12)、Cu-10Ge(试样编号13)构成的部件。
另外，在该实施方式1中，在将上述第1金属部件和第2金属部件用以低熔点金属为主要成分的接合材料接合时，将成形为板状的接合材料配置在第1金属部件和第2金属部件之间，边施加负载，边在250℃、30分钟的条件下进行回流焊，由此将第1金属部件和第2金属部件接合。
这里，参照图1(a)～(c)，对该实施方式1中的接合方法进行说明。具体如下。
首先，如图1(a)所示，使成形成板状的接合材料10位于第1金属部件11a、第2金属部件11b之间。
然后，在该状态下，边施加负载，边在250℃、15分钟的条件下进行回流焊，如图1(b)所示，使构成接合材料10的低熔点金属(Sn或Sn合金)熔融。然后，再继续加热规定时间(15分钟)(即，在250℃、30分钟的条件下进行回流焊)，由此使构成接合材料10的低熔点金属熔融，并使低熔点金属与构成第1金属部件11a、第2金属部件11b的第1金属和/或第2金属反应，生成金属间化合物12(图1(c))。
由此，得到第1金属部件和第2金属部件通过在回流焊之后凝固的含有金属间化合物的接合材料而接合的接合体。
另外，已确认，根据本发明的接合方法，Cu-Al-Sn金属间化合物分散、存在于接合材料中。
〔特性评价〕
以按上述那样得到的接合体作为试样，用以下方法测定了特性并进行了评价。
《接合强度》
关于接合强度，使用接合强度测定仪测定了所得接合体的剪切强度并进行了评价。
剪切强度的测定在横推速度：0.1mm·s-1、室温和260℃的条件下进行。
然后，将剪切强度在20Nmm-2以上的试样评价为◎(优)，2Nmm-2以下的试样评价为×(不合格)。
在表1中一并示出对各试样测得的接合强度(室温、260℃)和评价结果。
《残留成分评价》
切取约7mg在回流焊后凝固的含有金属间化合物的接合材料(反应生成物)，在测定温度30℃～300℃、升温速度5℃/min、N2气氛、对照物Al2O3的条件下进行了差示扫描量热测定(DSC测定)。由所得DSC图中低熔点金属成分在熔融温度下的熔融吸热峰的吸热量定量了残留的低熔点金属成分量，求出残留低熔点金属含有率(体积％)。然后，将残留低熔点金属含有率为0～50体积％的情况评价为◎(优)，将大于50体积％的情况评价为×(不合格)。
在表1中一并示出残留低熔点金属含有率和评价结果。
《流出不良率》
将所得接合体用环氧树脂密封并放置在相对湿度85％的环境中，在峰值温度260℃的回流焊条件下进行加热，检查接合材料再熔融流出即流出不良的发生比例。并由该结果求出流出不良发生率并进行了评价。
将接合材料的流出不良率为0～50％的情况评价为◎(优)，将大于50％的情况评价为×(不合格)。
在表1中一并示出流出不良发生率和评价结果。
《热冲击试验后的裂缝有无、接合强度》
在进行将所得接合体(试样)在-40℃/85℃的各温度条件下各保持30分钟的循环1000次之后，对各试样观察裂缝产生状态。并评价了裂缝产生的有无。
另外，对于热冲击试验后的各试样，与上述同样地评价了接合强度。将剪切强度在20Nmm-2以上的试样评价为◎(优)，将小于10Nmm-2的试样评价为×(不合格)。
在表1中一并示出热冲击试验后的裂缝产生有无、接合强度。另外，对于裂缝的产生进行评价的原因是，并非其自身会成为问题，而是其会成为使接合强度降低的重要原因。
表1
另外，在表1中，试样编号上带有*的试样(试样编号11～13的试样)是不满足本发明要件的比较用试样(比较例)。
如表1所示，关于室温下的接合强度，确认试样编号1～10的满足本发明要件的实施例试样和试样编号11～13的不满足本发明要件的比较例试样均显示出20Nmm-2以上的接合强度，具备实用强度。
另一方面，关于260℃下的接合强度，确认试样编号11～13的比较例试样的接合强度不充分，在2Nmm-2以下，与此相对，试样编号1～10的实施例试样的接合强度在20Nmm-2以上(23～28Nmm-2)，具备实用强度。
此外，关于残留低熔点金属含有率(残留成分评价)，试样编号11～13的比较例试样的残留低熔点金属含有率大于50体积％，与此相对，对于试样编号1～10的实施例试样，均成功地使它们的残留低熔点金属含有率在50体积％以下(27～35体积％)。
此外，关于接合材料的流出不良率，确认试样编号11～13的比较例试样的流出不良率大于50％，与此相对，试样编号1～10的实施例试样的流出不良率均在50％以下(10～22％)。
此外，确认试样编号1～10的实施例试样不受低熔点金属种类左右，具有同样的高耐热性。
此外，在热冲击试验后的试样观察中，发现试样编号11～13的比较例试样在1000次循环试验结束后有裂缝。另外，裂缝主要产生在形成于接合材料与第1、第2金属部件的界面上的Cu3Sn层、Cu6Sn5层(金属间化合物层)的内部、金属间化合物层与第1、第2金属部件的界面、金属间化合物层与接合材料的界面。
与此相对，在试样编号1～10的实施例试样中，未发现上述那样的裂缝的产生。
关于耐热冲击性，确认试样编号11～13的比较例试样在热冲击试验后的接合强度低，为5～8Nmm-2，而对满足本发明要件的试样编号1～10的各试样在热冲击试验后的接合强度在20Nmm-2以上(23～28Nmm-2)，与比较例相比，大幅提高。
另外确认，在满足本发明要件的试样编号1～10的各试样的接合部的与由Cu-Al合金构成的第1、第2金属部件的界面上未形成Cu3Sn、Cu6Sn5的层状金属间化合物。
试样编号1～10的具备本发明要件的实施例试样在热冲击试验后的接合强度大可能是因为接合部上低熔点金属(Sn或Sn合金)的残留比例低，回流焊后对所得的接合体进行热冲击试验时，金属间化合物层的生长、裂缝的产生被抑制，没有引起接合强度降低之故。
此外，满足本发明要件的试样编号1～10的试样具有高耐热性的原因可能是，使用了Cu-Al合金作为第1金属部件和第2金属部件，相对于第1离子化能为746kJ·mol-1的Cu，固溶的Al的第1离子化能小，为578 kJ·mol-1。即，可能是因为第1离子化能小的Al固溶在Cu中，因而，通过Al离子化，即，通过Al被氧化，扩散主体Cu的氧化被抑制，反应得到促进。
另一方面，在比较例那样地使用Cu-Zn合金作为第2金属的情况下，可能是由于Zn的第1离子化能为906kJ·mol-1，比Cu的第1离子化能大，因而，扩散主体Cu的氧化显著，金属间化合物的生成反应无法高效率地进行，无法提高耐热性。
<实施方式2>
除了使用表2的试样编号14～23中所示的由Cu-10Cr合金构成的部件作为第1金属部件和第2金属部件以外，在与实施方式1相同的方法、条件下，将由第1金属构成的第1金属部件和由第2金属构成的第2金属部件用以熔点比第1金属和第2金属低的低熔点金属(Sn或含Sn合金)为主要成分的接合材料接合。
然后，按与上述实施方式1相同的方法测定了接合体的特性，并按同样的标准进行了评价。
将低熔点金属、第1金属和第2金属的组成、特性的评价结果一并示于表2。另外，在表2中一并示出与在实施方式1中制得的比较例试样同一的试样(试样编号11～13的试样)的组成、特性评价结果等。
表2
如表2所示，关于室温下的接合强度，确认试样编号14～23的满足本发明要件的实施例试样和试样编号11～13的不满足本发明要件的比较例试样(与实施方式1中制得的比较例试样同一的试样)均显示出20Nmm-2以上的接合强度，具备实用强度。
另一方面，关于260℃下的接合强度，确认试样编号11～13的比较例试样的接合强度不充分，在2Nmm-2以下，与此相对，试样编号14～23的实施例试样的接合强度保持在20Nmm-2以上(23～30Nmm-2)，具备实用强度。
此外，关于残留低熔点金属含有率(残留成分评价)，试样编号11～13的比较例试样的残留低熔点金属含有率大于50体积％，与此相对，对于试样编号14～23的实施例试样，均成功地使它们的残留低熔点金属含有率在50体积％以下(44～49体积％)。
此外，关于接合材料的流出不良率，确认试样编号11～13的比较例试样的流出不良率大于50％，与此相对，试样编号14～23的实施例试样的流出不良率均在50％以下(32～36％)。
此外，确认试样编号14～23的实施例试样不受低熔点金属种类左右，均具有同样的高耐热性。
此外，在热冲击试验后的试样观察中，未发现试样编号14～23的实施例试样有裂缝产生。
此外，关于耐热冲击性，确认试样编号11～13的比较例试样在热冲击试验后的接合强度低，为5～8Nmm-2，而满足本发明要件的试样编号14～23的各试样在热冲击试验后的接合强度在20Nmm-2以上(24～28Nmm-2)，与比较例相比，大幅提高。
另外，确认满足本发明要件的试样编号14～23的各试样的接合部的与由Cu-Cr合金构成的第1、第2金属部件的界面上未形成Cu3Sn、Cu6Sn5的层状金属间化合物。
试样编号14～23的具备本发明要件的实施例试样在热冲击试验后的接合强度大可能是因为接合部上低熔点金属(Sn或Sn合金)的残留比例低，回流焊后对所得的接合体进行热冲击试验时，金属间化合物层的生长、裂缝的产生被抑制，没有引起接合强度降低之故。
此外，满足本发明要件的试样编号14～23的试样具有高耐热性的原因可能在于，在使用Cu-Cr合金作为第1金属部件和第2金属部件的实施例的情况下，相对于第1离子化能为746kJ·mol-1的Cu，固溶的Cr的第1离子化能小，为653kJ·mol-1。即，这可能是因为第1离子化能小的Cr固溶在Cu中，因而，通过Cr离子化，即，通过Cr被氧化，扩散主体Cu的氧化被抑制，反应得到促进。
另一方面，在比较例那样地使用Cu-Zn合金作为第2金属的情况下，可能是由于Zn的第1离子化能为906kJ·mol-1，比Cu的第1离子化能大，因而，扩散主体Cu的氧化显著，金属间化合物的生成反应无法高效率地进行。
在上述实施方式1和2中，以第1金属部件和第2金属部件两方为Cu-Al合金或两方为Cu-Cr合金的情况为例进行了说明，但在本发明中，任一方为Cu-Al合金或Cu-Cr合金即可。这种情况下，由于也会形成以金属间化合物为主要成分的接合部，因而也能够切实地接合第1金属部件和第2金属部件。
此外，在上述实施方式1和2中，将上述由Cu-Al合金或Cu-Cr合金构成的第1金属部件和第2金属部件用含有低熔点金属(Sn或含Sn合金)的接合材料接合，但是已确认，例如在将玻璃环氧基板上的由Cu-Al合金或Cu-Cr合金构成或具有这些合金的镀膜的安装用电极(本发明中的第1金属部件)与芯片电容器(电子部件)的由Cu-Al合金或Cu-Cr合金构成或具有这些合金的镀膜的外部电极(本发明中的第2金属部件)用添加有低熔点金属(Sn或含Sn合金)和助焊剂的焊膏接合时，
与上述实施方式1和2同样，也能以充分的接合强度将第1金属部件和第2金属部件切实地接合，防止温阶连接的再回流焊等阶段中的接合材料的流出。
此外，本发明在其他方面也不局限于上述实施方式，关于接合对象物的种类、接合工序中的条件、构成接合材料的低熔点金属的具体的组成、第1金属和第2金属的组成等，在发明的范围内也可进行各种应用和变形。
符号说明：
10 板状接合材料
11a 第1金属部件(第1金属)
11b 第2金属部件(第2金属)
12 金属间化合物

Claims (3)

1.接合方法，用于将具有第1金属的第1金属部件和具有第2金属的第2金属部件用以熔点低于上述第1金属和/或上述第2金属的低熔点金属为主要成分的接合材料接合，在该方法中，
构成所述接合材料的所述低熔点金属为Sn或含Sn合金，
所述第1金属和所述第2金属中的至少一方以Cu-Al合金为主要成分，所述Cu-Al合金以5～30重量％的范围含有Al，并且，
具有以下热处理工序：在将所述接合材料配置在所述第1金属部件和第2金属部件之间的状态下，在构成所述接合材料的所述低熔点金属熔融的温度下进行热处理，由此介由含有由构成所述接合材料的低熔点金属与构成所述第1金属和/或所述第2金属的所述Cu-Al合金反应生成的金属间化合物的接合部，将所述第1金属部件和所述第2金属部件接合。
2.电子装置的制造方法，所述电子装置具有由第1金属部件与第2金属部件接合而成的结构，所述第1金属部件具有第1金属，所述第2金属部件具有第2金属，
所述方法具有将所述第1金属部件和所述第2金属部件用权利要求1所述的接合方法接合的工序。
3.电子部件，其具有用含有由Sn或含Sn合金构成的低熔点金属的接合材料进行接合的电极，
其中，与所述接合材料相接的所述电极具有Cu-Al合金，所述Cu-Al合金以5～30重量％的范围含有Al。
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