CN104241496A - Metal substrate for LED - Google Patents
Metal substrate for LED Download PDFInfo
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- CN104241496A CN104241496A CN201310241767.9A CN201310241767A CN104241496A CN 104241496 A CN104241496 A CN 104241496A CN 201310241767 A CN201310241767 A CN 201310241767A CN 104241496 A CN104241496 A CN 104241496A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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Abstract
本发明提供一种LED用的金属基板,作为金属基板的芯材而着眼于材质具有与Mo接近(是耐高温、热膨胀系数小、在真空中极为稳定的材料)的特性的其他金属,通过对其加以改善而具备高亮度、高散热的功能,即便是不熟练也不会失败而能够切实地粘接设置LED元件。在CuW合金的核心基板上隔着Ni或Ni-P合金的基底镀层而形成用于改善CuW的硬度的调整镀层,该调整镀层为如下三种调整镀层的任一种:AuSn的合金调整镀层(3);Au和Sn层叠的复合调整镀层(4);In和Au层叠的复合调整镀层(5),能够通过该调整镀层与LED元件的外延层粘接。
The present invention provides a metal substrate for LEDs. As the core material of the metal substrate, other metals with characteristics close to those of Mo (materials with high temperature resistance, small thermal expansion coefficient, and extremely stable in vacuum) are focused on. It has been improved to have high luminance and high heat dissipation functions, and it is possible to reliably bond and install LED elements without failure even if you are unskilled. The adjustment coating for improving the hardness of CuW is formed on the core substrate of the CuW alloy through the base coating of Ni or Ni-P alloy, and the adjustment coating is any one of the following three adjustment coatings: the alloy adjustment coating of AuSn ( 3); Au and Sn laminated composite adjustment coating (4); In and Au laminated composite adjustment coating (5), through which the adjustment coating can be bonded to the epitaxial layer of the LED element.
Description
技术领域technical field
本发明涉及与硅晶圆等同样地按搭载的LED元件切出并使用、从而也被称为金属晶圆的LED用的金属基板。The present invention relates to a metal substrate for LEDs which is also called a metal wafer by cutting out and using mounted LED elements similarly to a silicon wafer or the like.
背景技术Background technique
以往,本申请的申请人等以特征为高亮度、高散热的LED用的基板为目的物,进行了镀敷方法的研究、开发,而制造并提供了在Mo的芯材的两面镀Cu的金属基板(专利文献1)。在该说明书中将该金属基板称为“DMD”。Hitherto, the applicants of the present application have conducted research and development of plating methods targeting substrates for LEDs characterized by high luminance and high heat dissipation, and manufactured and provided Cu-plated substrates on both sides of a Mo core material. Metal substrate (Patent Document 1). This metal substrate is referred to as "DMD" in this specification.
DMD现在用的很多并提供给厂商,在后续厂商处经过通过粘接来组装LED元件的精细的工序,而最终组装成LED芯片,但当被提供的后续厂商尤其是处于国外时,作业员对于该粘接工序并不能得心应手。DMD is currently used a lot and is provided to manufacturers. At the follow-up manufacturers, LED components are assembled through the delicate process of bonding, and finally assembled into LED chips. This bonding process is not handy.
专利文献1:JP特开2012-109288号公报Patent Document 1: JP Unexamined Publication No. 2012-109288
其原因是:在DMD的情况下,作为其基底材料的芯材Mo具有柔性,因此在粘接工序中会产生翘曲,因此会产生未粘接部分等,导致接合出现问题。为此,进行了大量的实验,尝试了通过对DMD施加镀层来进行改善,但成为了在Mo(或DMD)的柔性的不稳定的问题之上施加镀层的方法(参照表1),因此无法从根本上解决该缺点。The reason for this is that in the case of DMD, since the core material Mo as its base material is flexible, warpage occurs during the bonding process, so that unbonded parts and the like occur, causing problems in bonding. For this reason, a large number of experiments have been carried out, and it has been tried to improve the DMD by applying a plating layer, but it has become a method of applying a plating layer on top of the instability of the flexibility of Mo (or DMD) (see Table 1), so it cannot be achieved. Solve this shortcoming fundamentally.
[表1][Table 1]
发明内容Contents of the invention
本发明鉴于以上的情况,其课题在于提供一种LED的金属基板,作为金属基板的芯材而着眼于材质具有与Mo接近(是耐高温、热膨胀系数小、在真空中极为稳定的材料)的特性的其他金属,通过对其加以改善而具备高亮度、高散热的功能,即便是不熟练也不会失败而能够切实地粘接设置LED元件。In view of the above circumstances, the object of the present invention is to provide a metal substrate for LEDs. As the core material of the metal substrate, the material has a material close to that of Mo (a material that is resistant to high temperatures, has a small thermal expansion coefficient, and is extremely stable in a vacuum). Other metals with different characteristics can have high brightness and high heat dissipation functions by improving them, and LED components can be reliably bonded and installed without failure even if they are unskilled.
为了解决上述课题,本发明提供一种LED用的金属基板,其特征在于,在CuW合金的核心基板上隔着Ni或Ni-P合金的基底镀层而形成用于改善CuW的硬度的调整镀层,该调整镀层为如下三种调整镀层的任一种:In order to solve the above-mentioned problems, the present invention provides a metal substrate for LEDs, which is characterized in that an adjustment plating layer for improving the hardness of CuW is formed on a core substrate of CuW alloy via a base plating layer of Ni or Ni-P alloy, The adjustment coating is any one of the following three adjustment coatings:
(1)AuSn的合金调整镀层3;(1) AuSn alloy adjustment coating 3;
(2)Au和Sn层叠的复合调整镀层4;(2) Composite adjustment coating 4 laminated with Au and Sn;
(3)In和Au层叠的复合调整镀层5,(3) Composite adjustment coating layer 5 laminated with In and Au,
能够通过该调整镀层与LED元件的外延层粘接。The adjustment plating layer can be adhered to the epitaxial layer of the LED element.
如上构成LED用的金属基板,因此作为中心的核心基板(芯材)为Cu和W的合金(CuW,Cu为5~20%(剩余为W))。该CuW合金材料通过在W的烧结体熔浸Cu板而制造。此外,没有直接附加粘接剂,但能够通过调整镀层3、4、5与LED元件的外延层7粘接。Since the metal substrate for LED is constituted as above, the central core substrate (core material) is an alloy of Cu and W (CuW, 5 to 20% of Cu (the remainder is W)). This CuW alloy material is produced by dipping a Cu plate into a W sintered body. In addition, no adhesive is added directly, but it is possible to adhere to the epitaxial layer 7 of the LED element through the adjustment plating layers 3 , 4 , and 5 .
此外,核心基板1为CuW,虽然脆、但有硬度(参照表1),因此是在外延接合工序中难以翘曲的材料,能够使调整镀层3、4、5不变形而稳定地保持在其上。并且,该调整镀层3、4、5是适于调整的软质,由此将CuW的硬度缓和到具有适于LED元件的粘接的柔软性的程度。此外,具有高亮度、高散热的金属特性,适于搭载LED元件。In addition, the core substrate 1 is CuW, which is brittle but has hardness (see Table 1). Therefore, it is a material that is difficult to warp in the epitaxial bonding process, and the adjustment plating layers 3, 4, and 5 can be stably held at their positions without deformation. superior. Furthermore, the adjustment plating layers 3 , 4 , and 5 are soft and suitable for adjustment, thereby reducing the hardness of CuW to a level suitable for bonding LED elements. In addition, it has high brightness and high heat dissipation metal properties, and is suitable for mounting LED components.
如上所述,根据本发明,该LED用的金属基板将耐高温、热膨胀系数小、在真空中也极为稳定的CuW作为核心基板,在其至少一面形成有CuW的硬度的调整镀层,从而改善了硬度高、形态没有柔软性的CuW的材质,容易正确无误地外延接合LED元件,因此不需要熟练就能够适当地搭载LED元件,且能有效地发挥高亮度、高散热的特性。As mentioned above, according to the present invention, the metal substrate for the LED uses CuW, which is high temperature resistant, has a small thermal expansion coefficient, and is extremely stable in vacuum, as a core substrate, and has a hardness-adjusting plating layer of CuW formed on at least one side thereof, thereby improving its performance. The material of CuW, which has high hardness and no flexibility in shape, is easy to epitaxially bond LED elements without error, so LED elements can be properly mounted without skill, and can effectively exert the characteristics of high brightness and high heat dissipation.
附图说明Description of drawings
图1是在使用状态下表示本发明的一个实施例的LED用基板的截面说明图。FIG. 1 is an explanatory cross-sectional view showing an LED substrate according to an embodiment of the present invention in a used state.
图2是表示另一实施例的基板的截面说明图。FIG. 2 is an explanatory cross-sectional view showing a substrate of another embodiment.
图3是表示又一实施例的基板的截面说明图。Fig. 3 is an explanatory cross-sectional view showing a substrate of still another embodiment.
图4是表示又一实施例的基板的截面说明图。FIG. 4 is an explanatory cross-sectional view showing a substrate of still another embodiment.
图5是表示又一实施例的基板的截面说明图。Fig. 5 is a cross-sectional explanatory view showing a substrate of still another embodiment.
图6是表示又一实施例的基板的截面说明图。Fig. 6 is a cross-sectional explanatory view showing a substrate of still another embodiment.
图7是表示又一实施例的基板的截面说明图。Fig. 7 is a cross-sectional explanatory view showing a substrate of still another embodiment.
图8是表示又一实施例的基板的截面说明图。Fig. 8 is a cross-sectional explanatory view showing a substrate of still another embodiment.
图9是表示又一实施例的基板的截面说明图。Fig. 9 is a cross-sectional explanatory view showing a substrate of still another embodiment.
具体实施方式Detailed ways
在本发明中,调整镀层3、4、5是软化核心基板1的“CuW”的硬度、若变形则也对其进行调整的层,有如下三种。In the present invention, the adjustment plating layers 3 , 4 , and 5 are layers that soften the hardness of “CuW” of the core substrate 1 and adjust it even if deformed, and there are the following three types.
(1)AuSn合金的调整镀层3(1) Adjustment coating of AuSn alloy 3
(2)Au和Sn层叠的复合调整镀层4(2) Composite adjustment coating layered with Au and Sn 4
此时,在接合时Au和Sn熔融而成为AuSn。At this time, Au and Sn melt to become AuSn at the time of bonding.
(3)In和Au层叠的复合调整镀层5(3) Composite adjustment coating layered with In and Au 5
此时,In的熔点低至156.4℃,因此具有能够降低接合温度的优点。In this case, since the melting point of In is as low as 156.4° C., there is an advantage that the bonding temperature can be lowered.
此外,在(2)、(3)的情况下,为镀层层叠的复合镀层4、5,因此也存在高亮度的Au镀层10为外表面的情况(参照图4、图5、图8、图9)。In addition, in the case of (2) and (3), it is the composite plating layers 4 and 5 where the plating layers are stacked, so there are also cases where the high-brightness Au plating layer 10 is the outer surface (see Fig. 4, Fig. 5, Fig. 8, Fig. 9).
关于LED用的金属基板P的使用,对于LED元件的安装,经由粘接剂6将其外延层7和调整镀层3、4、5接合,而作为该粘接剂6,在调整镀层3、4可适当地使用AuSn合金,在Au、In层叠镀层5可适当地使用Au。Regarding the use of the metal substrate P for LED, for the mounting of the LED element, its epitaxial layer 7 and the adjustment plating layers 3, 4, 5 are bonded via the adhesive 6, and as the adhesive 6, the adjustment plating layers 3, 4 An AuSn alloy can be suitably used, and Au can be suitably used for the Au and In laminated plating layer 5 .
实施例1Example 1
图1表示一个实施例,该LED用的金属基板P中,核心基板1以铜和钨的合金即CuW为芯材,在其两面隔着Ni(或Ni-P合金)的基底层2、2而形成抑制硬度的软质的调整镀层3、3,从而具有两面AuSn合金镀层的多层结构。FIG. 1 shows an example. In the metal substrate P for the LED, the core substrate 1 uses an alloy of copper and tungsten, that is, CuW, as the core material, and Ni (or Ni-P alloy) base layers 2 and 2 are interposed on both sides thereof. On the other hand, the soft adjustment plating layers 3 and 3 that suppress the hardness are formed, thereby having a multilayer structure of AuSn alloy plating layers on both sides.
图1表示使用状态,在上表面经由AuSn的粘接剂6安装LED元件,将自蓝宝石剥离的外延层7与调整镀层3接合。此外,在下表面同样地经由粘接剂6将封装基板8与AuSn的合金调整镀层3接合。另外,AuSn的合金比例为80:20。FIG. 1 shows the state of use. An LED element is mounted on the upper surface via an AuSn adhesive 6 , and the epitaxial layer 7 peeled off from the sapphire is bonded to the adjustment plating layer 3 . Also, on the lower surface, the package substrate 8 and the AuSn alloy adjustment plating layer 3 are bonded via the adhesive 6 in the same manner. In addition, the alloy ratio of AuSn is 80:20.
实施例2Example 2
图2表示仅在上方实施的“单面AuSn”型,在CuW的核心基板1的两面隔着基底层2、2形成Au镀层9、9,在上表面,在其上形成AuSn的合金调整镀层3。另外,在其上通过外延层接合LED元件,下表面为Au镀层9,在此接合封装基板(省略图示)。FIG. 2 shows the "single-sided AuSn" type implemented only on the upper side. Au plating layers 9, 9 are formed on both sides of a CuW core substrate 1 with base layers 2, 2 interposed therebetween, and an AuSn alloy adjustment plating layer is formed on the upper surface. 3. In addition, an LED element is bonded thereon via an epitaxial layer, and an Au plating layer 9 is formed on the lower surface, where a package substrate (not shown) is bonded.
实施例3Example 3
图3表示“双面AuSn”型,与类似例子的上述图2的实施例不同,在下方的Au镀层9上施加AuSn的合金镀层,上下两面为与Au重叠的AuSn的合金调整镀层3、3,成为进一步缓和了CuW的硬度的构造。Figure 3 shows the "double-sided AuSn" type, which is different from the embodiment of the above-mentioned Figure 2 of the similar example, the AuSn alloy coating is applied on the lower Au coating 9, and the upper and lower sides are AuSn alloy adjustment coatings 3, 3 overlapping with Au , and has a structure in which the hardness of CuW is further relaxed.
实施例4Example 4
图4为“单面AuSn层叠”型,在核心基板1的两面形成Au镀层9、9,在上部,在该镀层9上形成以Au、Sn为上下镀层而层叠的复合调整镀层4,在此外表面为其中的Au镀层10,在下表面露出上述Au镀层9。Figure 4 is a "single-sided AuSn stacking" type, in which Au plating layers 9, 9 are formed on both sides of the core substrate 1, and on the upper part, a composite adjustment plating layer 4 is formed on the plating layer 9 with Au and Sn as the upper and lower plating layers. The surface is the Au plating layer 10 therein, and the above-mentioned Au plating layer 9 is exposed on the lower surface.
实施例5Example 5
图5表示图4的类似例子,在上下均在Au镀层9、9上形成以Au、Sn为上下镀层而层叠的复合调整镀层4、4,成为上下对称的多层结构。FIG. 5 shows a similar example to FIG. 4 , in which Au and Sn are formed on the top and bottom of the Au coatings 9 and 9 to form composite adjustment coatings 4 and 4 stacked as upper and lower coatings, forming a vertically symmetrical multilayer structure.
实施例6Example 6
图6表示“单面In”型,在核心基板1的两面形成Au镀层9、9,仅在上方形成In、Au镀层层叠而成的复合调整镀层5,下表面为单独的Au镀层9。6 shows the "single-sided In" type, in which Au plating layers 9, 9 are formed on both sides of the core substrate 1, and a composite adjustment plating layer 5 formed by stacking In and Au plating layers is formed only on the upper side, and a single Au plating layer 9 is formed on the lower surface.
实施例7Example 7
图7是与图6类似的“双面In”型,在上下表面形成In和Au的上下镀层层叠而成的复合调整镀层5、5,成为上下对称的多层结构。Fig. 7 is a "double-sided In" type similar to Fig. 6, and composite adjustment coatings 5, 5 formed by stacking upper and lower coatings of In and Au are formed on the upper and lower surfaces, forming a vertically symmetrical multilayer structure.
实施例8Example 8
图8是“单面In”型,在核心基板1的两面形成Au的镀层9、9,在上表面,在其上形成In和Au的上下镀层层叠而成的复合调整镀层5,外表面为作为复合的一方的Au镀层10。Figure 8 is a "single-sided In" type. Au plating layers 9, 9 are formed on both sides of the core substrate 1, and on the upper surface, a composite adjustment plating layer 5 formed by laminating the upper and lower plating layers of In and Au is formed. The outer surface is Au plating layer 10 as one side of the composite.
实施例9Example 9
图9是与图8的情况类似的“双面In”型,在下表面,也在Au镀层9上形成In和Au的上下镀层层叠而成的复合调整镀层5,在多层结构中,两外表面均为复合一方的Au镀层10、10,形成为高亮度、高软度。Figure 9 is a "double-sided In" type similar to the situation in Figure 8. On the lower surface, a composite adjustment coating layer 5 formed by stacking the upper and lower coating layers of In and Au is also formed on the Au coating layer 9. In the multilayer structure, the two outer layers The surfaces are all composite Au plating layers 10, 10, which are formed with high brightness and high softness.
符号说明Symbol Description
P LED用的金属基板Metal substrate for P LED
1 基底层1 basal layer
3 AuSn的合金调整镀层3 AuSn alloy adjustment coating
4 Au和Sn层叠的复合调整镀层4 Au and Sn laminated composite adjustment coating
5 In和Au层叠的复合调整镀层5 Composite adjustment coating layered by In and Au
7 外延层7 epitaxial layer
9 Au镀层9 Au plating
10 复合调整镀层中的Au镀层10 Au coating in composite adjustment coating
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Citations (3)
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CN1750284A (en) * | 2004-09-14 | 2006-03-22 | 斯坦雷电气株式会社 | Semiconductor element, manufacturing method thereof, and electronic component unit |
CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | A method for preparing Au-Sn alloy solder by electroplating combined with vacuum coating |
CN102779913A (en) * | 2012-08-14 | 2012-11-14 | 天津三安光电有限公司 | Ultra-high-brightness light-emitting diode and preparation method thereof |
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CN1750284A (en) * | 2004-09-14 | 2006-03-22 | 斯坦雷电气株式会社 | Semiconductor element, manufacturing method thereof, and electronic component unit |
CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | A method for preparing Au-Sn alloy solder by electroplating combined with vacuum coating |
CN102779913A (en) * | 2012-08-14 | 2012-11-14 | 天津三安光电有限公司 | Ultra-high-brightness light-emitting diode and preparation method thereof |
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