CN104183574A - Semiconductor testing structure and a semiconductor testing method - Google Patents
Semiconductor testing structure and a semiconductor testing method Download PDFInfo
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- CN104183574A CN104183574A CN201310206572.0A CN201310206572A CN104183574A CN 104183574 A CN104183574 A CN 104183574A CN 201310206572 A CN201310206572 A CN 201310206572A CN 104183574 A CN104183574 A CN 104183574A
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- 238000012360 testing method Methods 0.000 title claims abstract description 639
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 230000015556 catabolic process Effects 0.000 claims description 58
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- 229910052751 metal Inorganic materials 0.000 claims description 48
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- 239000000758 substrate Substances 0.000 claims description 20
- 238000010998 test method Methods 0.000 claims description 11
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- 229910052802 copper Inorganic materials 0.000 claims description 4
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- 244000126211 Hericium coralloides Species 0.000 abstract 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 19
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- 238000005516 engineering process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Provided are a semiconductor testing structure and a semiconductor testing method. The semiconductor testing structure comprises a first comb-shaped testing electrode, a second comb-shaped testing electrode, and a snake-shaped testing electrode. The comb tooth metallic lines of the first comb-shaped testing electrode and the second comb-shaped testing electrode are embedded in a staggered manner. The snake-shaped testing electrode is arranged between the first comb-shaped testing electrode and the second comb-shaped testing electrode and isolates the comb tooth metallic lines of the first comb-shaped testing electrode from the comb tooth metallic lines of the second comb-shaped testing electrode. Further, the snake-shaped testing electrode is electrically isolated from the first comb-shaped testing electrode and the second comb-shaped testing electrode on both sides thereof. Both ends of the snake-shaped testing electrode are connected with a first testing end. The middle of the snake-shaped testing electrode is connected with a second testing end. The first testing end and the second testing end are connected. Since the first testing end and the second testing end are connected, the voltages at various positions of the snake-shaped testing electrode are equal and the accuracy of tested results can be improved.
Description
Technical field
The present invention relates to semiconductor test field, particularly a kind of semi-conductor test structure and method of testing.Background technology
In existing semiconductor technology, conventionally use multiple layer metal interconnecting construction that various device electricity is connected, between described metal interconnecting wires, utilize the good dielectric material electricity isolation of insulation property.The reliability testing of multiple layer metal interconnecting construction is all vital for whole IC manufacturing process yield, properties of product and reliability, wherein, dielectric breakdown (Time dependent Dielectric Breakdown with time correlation, TDDB) reliability testing of characteristic is test event very important in reliability testing, comprise and two kinds of mode: constant voltage TDDB and ramp voltage TDDB characterize breakdown characteristics between adjacent metal interconnecting wires by testing corresponding breakdown time and puncture voltage with the dielectric breakdown test of time correlation.
In an embodiment of prior art, adopt dielectric breakdown characteristic between test structure test metal interconnecting wires as shown in Figure 1.In the test structure shown in Fig. 1, the first pectination test electrode 10 and the second pectination test electrode 20 are oppositely arranged, and the broach metal wire of described the first pectination test electrode 10 and the second pectination test electrode 20 phase embedding that interlocks, article one, snakelike test electrode 30 is isolated by the broach metal wire of the first pectination test electrode 10 and the second pectination test electrode 20, spacing between described broach metal wire and snakelike test electrode is set according to design rule, is the minimum spacing between the interconnection line of current design rule defined.In test process, one end of described snakelike test electrode 30 is applied to slope test voltage, the other end of described snakelike test electrode 30 is floating empty, and by the first pectination test electrode 10 and the second pectination test electrode 20 ground connection, measure the leakage current between described two pectination test electrodes and snakelike test electrode, slope test voltage progressively increases, when leakage current suddenly rises, illustrate that between two pectination test electrodes and snakelike test electrode, medium is breakdown, it is described that to make the slope test voltage that leakage current suddenly rises be the puncture voltage between two pectination test electrodes and snakelike test electrode.Because the snakelike test electrode 30 of described test structure is between the first pectination test electrode 10 and the second pectination test electrode 20, more approaching with the layout-design of metal interconnecting wires in actual integrated circuit, make the breakdown voltage value between metal interconnecting wires adjacent in the test result of described puncture voltage and actual integrated circuit similar.But the test result of utilizing described test structure to obtain is not still very accurate.
Summary of the invention
The problem that the present invention solves is to provide a kind of semi-conductor test structure and method of testing, can further improve the accuracy of test result.
For addressing the above problem, the invention provides a kind of semi-conductor test structure, comprising: substrate, is positioned at the first interlayer dielectric layer of described substrate surface; Be positioned at the first pectination test electrode and the second pectination test electrode on described the first interlayer dielectric layer surface, described the first pectination test electrode and the second pectination test electrode are oppositely arranged and the staggered phase embedding of the broach metal wire of described the first pectination test electrode and the second pectination test electrode; Snakelike test electrode between described the first pectination test electrode and the second pectination test electrode, described snakelike test electrode is isolated by the broach metal wire of the first pectination test electrode and the second pectination test electrode, and the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode electric isolation; The two ends of described snakelike test electrode are connected with the first test lead, and the centre position of described snakelike test electrode is connected with the second test lead, and described the first test lead is connected with the second test lead.
Optionally, also comprise: the first metal layer between described substrate and the first interlayer dielectric layer, be positioned at the first metal layer surface and run through the first conductive plunger of the first interlayer dielectric layer, described snakelike test electrode is positioned at the first conductive plunger surface and described the first conductive plunger corresponding to the position of snakelike test electrode, the first metal layer being connected with first conductive plunger at described snakelike test electrode two ends is as the first test lead, and the first metal layer being connected with first conductive plunger in described snakelike test electrode centre position is as the second test lead.
Optionally, the position that described the first conductive plunger contacts with snakelike test electrode is uniformly distributed in described snakelike test electrode surface.
Optionally, also comprise: the second interlayer dielectric layer that is positioned at described the first interlayer dielectric layer surface, be positioned at described snakelike test electrode surface and run through the second conductive plunger of described the second interlayer dielectric layer and be positioned at described the second conductive plunger, second metal level on the second interlayer dielectric layer surface, described the second conductive plunger is corresponding to the position of snakelike test electrode, the second metal level being connected with second conductive plunger at described snakelike test electrode two ends is as the first test lead, the second metal level being connected with second conductive plunger in described snakelike test electrode centre position is as the second test lead.
Optionally, the position that described the second conductive plunger contacts with snakelike test electrode is uniformly distributed in described snakelike test electrode surface.
Optionally, also comprise: the diode between described the first test lead, the second test lead, the anode of described diode is connected with the first test lead, and the negative electrode of described diode is connected with the second test lead.
Optionally, described the first pectination test electrode, the second pectination test electrode electricity connect.
Optionally, the material of described the first pectination test electrode, the second pectination test electrode and snakelike test electrode is copper or aluminium.
Optionally, the spacing between described the first pectination test electrode, the second pectination test electrode and snakelike test electrode is the minimum spacing between the interconnection line of current design rule defined.
The present invention also provides a kind of method of testing that adopts above-mentioned semi-conductor test structure, comprise: between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply test voltage, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test.
Optionally, the test of described dielectric breakdown comprises that the dielectric breakdown test of constant voltage and time correlation and the dielectric breakdown of ramp voltage and time correlation test.
The present invention also provides a kind of method of testing that adopts above-mentioned semi-conductor test structure, comprise: between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply positive test voltage, make diode current flow, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test; Between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply negative test voltage, make diode cut-off, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test; The identical impact on dielectric breakdown test of each position voltage according to the test result judgement of twice test at snakelike test electrode.
Optionally, the test of described dielectric breakdown comprises: the dielectric breakdown test of constant voltage and time correlation and the dielectric breakdown of ramp voltage and time correlation are tested.
Optionally, between described the first test lead and the first pectination test electrode, the second pectination test electrode, applying positive test voltage is: at described the first test lead, apply the positive test voltage that punctures, described the first pectination test electrode, the second pectination test electrode ground connection; Or described the first test lead ground connection, applies the negative test voltage that punctures at described the first pectination test electrode, the second pectination test electrode.
Optionally, between described the first test lead and the first pectination test electrode, the second pectination test electrode, applying negative test voltage is: at described the first test lead, apply the negative test voltage that punctures, described the first pectination test electrode, the second pectination test electrode ground connection; Or described the first test lead ground connection, applies the positive test voltage that punctures at described the first pectination test electrode, the second pectination test electrode.
Compared with prior art, technical scheme of the present invention has the following advantages:
Because the two ends of the snakelike test electrode of described semi-conductor test structure are connected with the first test lead, the centre position of described snakelike test electrode is connected with the second test lead, and described the first test lead is connected with the second test lead, when voltage is applied on described the first test lead, the voltage of each position of described snakelike test electrode is all identical, do not need to consider the impact of the length of snakelike test electrode on final testing result, thereby improved the accuracy of test result.
Accompanying drawing explanation
Fig. 1 is the structural representation of the test structure of prior art;
Fig. 2 is the voltage scatter chart that utilizes the snakelike test electrode diverse location of test structure acquisition as described in Figure 1;
Fig. 3～Fig. 8 is the structural representation of the semi-conductor test structure of the embodiment of the present invention.
Embodiment
While carrying out the reliability testing of dielectric breakdown between utilization test structure is as shown in Figure 1 to two pectination test electrodes and snakelike test electrode, inventor finds that the snakelike test electrode of different length is different corresponding puncture voltage or the breakdown time obtaining.
For this reason, inventor, through experiment test, finds that this is mainly because voltage difference corresponding to snakelike test electrode diverse location causes.When prior art is tested test structure as shown in Figure 1, only at the two ends of described snakelike test electrode, apply test voltage simultaneously, or in one end of snakelike test electrode, apply test voltage, the floating sky of the other end, the magnitude of voltage of whole snakelike test electrode should be all identical in theory, but owing to unavoidably having leakage current generating between two pectination test electrodes and snakelike test electrode, can cause the voltage at described snakelike test electrode two ends not identical with the voltage in snakelike test electrode centre position.Please refer to Fig. 2, dotted line is wherein two pectination test electrode ground connection, while applying the test voltage of 18V at the two ends of described snakelike test electrode simultaneously, the voltage distribution curve of described snakelike test electrode diverse location.Solid line is wherein two pectination test electrode ground connection, applies the test voltage of 18V in one end of described snakelike test electrode, and the other end of described snakelike test electrode is floating empty, the voltage distribution curve of described snakelike test electrode diverse location.When the length of snakelike test electrode longer, the minimum voltage value of described snakelike test electrode is lower, make the pectination test electrode of diverse location not identical with the test voltage between snakelike test electrode, therefore the snakelike test electrode of different length is corresponding puncture voltage, breakdown time are different, make final test result inaccuracy.
For this reason, the embodiment of the present invention provides a kind of semi-conductor test structure and detection method, the two ends of the snakelike test electrode of described semi-conductor test structure are connected with the first test lead, the centre position of described snakelike test electrode is connected with the second test lead, and described the first test lead is connected with the second test lead, make the voltage of each position of described snakelike test electrode all identical, do not need to consider the impact of the length of snakelike test electrode on final testing result, thereby improved the accuracy of test result.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
First first embodiment of the invention provides a kind of semi-conductor test structure, please refer to Fig. 3 and Fig. 4, Fig. 3 is the structural representation of the semi-conductor test structure of the embodiment of the present invention, Fig. 4 is that semi-conductor test structure is as shown in Figure 3 along the cross-sectional view of AA ' line, specifically comprise: substrate 100, be positioned at the first metal layer 110 on described substrate 100 surfaces, be positioned at first interlayer dielectric layer 120 on described the first metal layer 110 and substrate 100 surfaces, be positioned at described the first metal layer 110 surfaces and run through the first conductive plunger 130 of the first interlayer dielectric layer 120, be positioned at the first pectination test electrode 140 and the second pectination test electrode 150 on described the first interlayer dielectric layer 120 surfaces, described the first pectination test electrode 140 and the second pectination test electrode 150 are oppositely arranged and the staggered phase embedding of the broach metal wire of described the first pectination test electrode 140 and the second pectination test electrode 150, snakelike test electrode 160 between described the first pectination test electrode 140 and the second pectination test electrode 150, described snakelike test electrode 160 is isolated by the broach metal wire of the first pectination test electrode 140 and the second pectination test electrode 150, and described snakelike test electrode 160 is positioned at described the first conductive plunger 130 surfaces, and described the first conductive plunger 130 is corresponding with the position of snakelike test electrode 160, the first metal layer 110 that described the first conductive plunger 130 is connected is as the first test lead S1 and the second test lead S2 of snakelike test electrode 160, wherein, the first metal layer 110 being connected with first conductive plunger 130 at the two ends of described snakelike test electrode 160 is as the first test lead S1, the first metal layer 110 being connected with first conductive plunger 130 in the centre position of described snakelike test electrode 160 is as the second test lead S2, the two ends of described snakelike test electrode 160 are connected with the first test lead S1, the centre position of described snakelike test electrode 160 is connected with the second test lead S2, and described the first test lead S1 is connected by the first metal layer 110 with the second test lead S2, utilize described the first interlayer dielectric layer 120 by the first pectination test electrode 140, second pectination test electrode 150 electric isolation of described snakelike test electrode 160 and both sides.
Concrete, described substrate 100 at least comprises Semiconductor substrate, described substrate 100 can also comprise semiconductor device and one or more layers interlayer dielectric layer that is positioned at semiconductor substrate surface, described Semiconductor substrate can, for silicon substrate, germanium substrate, silicon-on-insulator substrate etc., can have metal interconnect structure in described interlayer dielectric layer.In the present embodiment, described substrate 100 surfaces are formed with the first metal layer 110.
The material of described the first metal layer 110, the first pectination test electrode 140, the second pectination test electrode 150 and snakelike test electrode 160 is aluminium or copper, and the material of described the first conductive plunger 130 is tungsten or copper.
Described the first interlayer dielectric layer 120 comprises at least one layer of interlayer dielectric layer, and the material of described the first interlayer dielectric layer 120 is silica or low-K dielectric material etc., and described low-K dielectric material is dielectric constant lower than 3.9 dielectric material.
In the present embodiment, spacing between described the first pectination test electrode 140, the second pectination test electrode 150 and snakelike test electrode 160 is the minimum spacing between the interconnection line of current design rule defined, thereby can utilize the breakdown characteristics between the interconnection line under described semi-conductor test structure test minimum spacing.In other embodiments, the spacing between described the first pectination test electrode, the second pectination test electrode and snakelike test electrode also can need to suitably be selected according to test, at this, does not do concrete restriction.
In the present embodiment, described the first pectination test electrode 140, the second pectination test electrode 150 apply separately test voltage.In other embodiments, described the first pectination test electrode, the second pectination test electrode also can apply test voltage after electricity connection simultaneously.
In the present embodiment, the position that described the first conductive plunger 130 contacts with snakelike test electrode 160 is uniformly distributed in the lower surface of described snakelike test electrode 160, and the voltage of each position of snakelike test electrode is all equated.In other embodiments, the position that described the first conductive plunger contacts with snakelike test electrode also can be distributed in the lower surface of described snakelike test electrode unevenly.
In the present embodiment, described the first test lead S1 is connected by the first metal layer 110 with the second test lead S2, makes described the first test lead S1 identical with the magnitude of voltage of the second test lead S2.Because described the second test lead S2 is connected with the centre position of snakelike test electrode 160, described the first test lead S1 is connected with the two ends of snakelike test electrode 160, therefore the voltage of described snakelike test electrode 160 diverse locations is all identical, do not need to consider the impact of the length of snakelike test electrode 160 on final testing result, thereby improved the accuracy of test result.
In other embodiments, please refer to Fig. 5, structural representation for the semi-conductor test structure of another embodiment of the present invention, between described the first test lead S1 and the second test lead S2, can also there is diode 170, the anode of described diode 170 is connected with the first test lead S1, and the negative electrode of described diode 170 is connected with the second test lead S2.Because diode has one-way conduction characteristic, when the voltage of described the first test lead S1 is during higher than the voltage of described the first pectination test electrode 140 and the second pectination test electrode 150, even if the voltage in snakelike test electrode 160 centre positions may be lower than the voltage at snakelike test electrode 160 two ends, the voltage of the second test lead S2 may be lower than the voltage of the first test lead S1, but due to diode 170 meeting conductings because being applied with forward voltage, the voltage of therefore final described the second test lead S2 equates with the voltage of the first test lead S1, the voltage in snakelike test electrode 160 centre positions equates with the voltage at snakelike test electrode 160 two ends.
And when the voltage of described the first test lead S1 is during lower than the voltage of described the first pectination test electrode 140 and the second pectination test electrode 150, because the voltage in snakelike test electrode 160 centre positions can be higher than the voltage at snakelike test electrode 160 two ends, the voltage of the second test lead S2 is higher than the voltage of the first test lead S1, diode 170 can end because being applied with reverse voltage, the therefore final voltage of described the second test lead S2 and the voltage of the first test lead S1 are unequal, the voltage in snakelike test electrode 160 centre positions and the voltage at snakelike test electrode 160 two ends are unequal, the semi-conductor test structure of the present embodiment is equivalent to not have in prior art the test structure of the second test lead.Therefore, utilize a described semi-conductor test structure, by controlling the difference of the test voltage applying, can form respectively two kinds of identical or different test structures of voltage of snakelike test electrode 160 diverse locations, detect respectively the breakdown characteristics of described two kinds of test structures, thereby whether the voltage that can compare snakelike test electrode 160 equates the influence degree to test structure everywhere, is conducive to improve the testing precision of described semi-conductor test structure.
In another embodiment, please refer to Fig. 6 and Fig. 7, Fig. 6 is the structural representation of the semi-conductor test structure of another embodiment of the present invention, Fig. 7 is that semi-conductor test structure is as shown in Figure 6 along the cross-sectional view of BB ' line, specifically comprise: substrate 200, be positioned at first interlayer dielectric layer 220 on described substrate 200 surfaces, be positioned at the first pectination test electrode 240 and the second pectination test electrode 250 on described the first interlayer dielectric layer 220 surfaces, described the first pectination test electrode 240 and the second pectination test electrode 250 are oppositely arranged and the staggered phase embedding of the broach metal wire of described the first pectination test electrode 240 and the second pectination test electrode 250, snakelike test electrode 260 between described the first pectination test electrode 240 and the second pectination test electrode 250, described snakelike test electrode 260 is isolated by the broach metal wire of the first pectination test electrode 240 and the second pectination test electrode 250, be positioned at second interlayer dielectric layer 280 on described the first interlayer dielectric layer 220 surfaces, be positioned at described snakelike test electrode 260 surfaces and run through the second conductive plunger 230 of described the second interlayer dielectric layer 280, the second metal level 210 that is positioned at described the second conductive plunger 210 and the second interlayer dielectric layer 280 surfaces, described the second conductive plunger 230 is corresponding with the position of snakelike test electrode 260, the second metal level 210 being connected with described the second conductive plunger 230 is as the first test lead S1 and the second test lead S2 of snakelike test electrode 260, wherein, the second metal level 210 being connected with second conductive plunger 230 at the two ends of described snakelike test electrode 260 is as the first test lead S1, the second metal level 210 being connected with second conductive plunger 230 in the centre position of described snakelike test electrode 260 is as the second test lead S2, the two ends of described snakelike test electrode 260 are connected with the first test lead S1, the centre position of described snakelike test electrode 260 is connected with the second test lead S2, and described the first test lead S1 is connected by the second metal level 210 with the second test lead S2, utilize described the first interlayer dielectric layer 220 by the first pectination test electrode 240, second pectination test electrode 250 electric isolation of described snakelike test electrode 260 and both sides.
In other embodiments, please refer to Fig. 8, structural representation for the semi-conductor test structure of another embodiment of the present invention, between described the first test lead S1 and the second test lead S2, can also there is diode 270, the anode of described diode 270 is connected with the first test lead S1, and the negative electrode of described diode 270 is connected with the second test lead S2.Utilize a described semi-conductor test structure, by controlling the difference of the test voltage applying, can form respectively two kinds of identical or different test structures of voltage of snakelike test electrode 260 diverse locations, detect respectively the breakdown characteristics of described two kinds of test structures, thereby whether the voltage that can compare snakelike test electrode 260 equates the influence degree to test structure everywhere, is conducive to improve the testing precision of described semi-conductor test structure.
Second embodiment of the invention also provides the method for testing of the semi-conductor test structure of a kind of employing as shown in Fig. 3 or Fig. 6, comprise: between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply test voltage, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test.
Described dielectric breakdown test, for dielectric breakdown (TDDB) test with time correlation, comprises two kinds of mode: constant voltage TDDB and ramp voltage TDDB.
When adopting constant voltage TDDB to carry out dielectric breakdown test, at described the first test lead and the first pectination test electrode, between the second pectination test electrode, apply constant voltage, measure the leakage current between described two pectination test electrodes and snakelike test electrode, after the regular hour, when leakage current suddenly rises, illustrate that between two pectination test electrodes and snakelike test electrode, medium is breakdown, the described total time that applies constant voltage is breakdown time, utilize the length of described breakdown time to characterize the breakdown characteristics between two pectination test electrodes and snakelike test electrode.
When adopting ramp voltage TDDB to carry out dielectric breakdown test, at described the first test lead and the first pectination test electrode, between the second pectination test electrode, apply ramp voltage, measure the leakage current between described two pectination test electrodes and snakelike test electrode, after the regular hour, when leakage current suddenly rises, illustrate that between two pectination test electrodes and snakelike test electrode, medium is breakdown, it is described that to make the ramp voltage that leakage current suddenly rises be the puncture voltage between two pectination test electrodes and snakelike test electrode, utilize the size of described puncture voltage to characterize the breakdown characteristics between two pectination test electrodes and snakelike test electrode.
Because the first test lead of the semi-conductor test structure as shown in Fig. 3 or Fig. 6 is directly connected with the second test lead, to the first test lead and the first pectination test electrode, voltage direction between the second pectination test electrode does not limit, therefore, both can be by described the first pectination test electrode, the second pectination test electrode ground connection, at the first test lead, apply positive test voltage or the negative test voltage that punctures of puncturing, also can be at described the first pectination test electrode, the second pectination test electrode applies positive test voltage or the negative test voltage that punctures of puncturing, the first test lead ground connection.Because described the first test lead is connected with the second test lead, the voltage of each position of described snakelike test electrode all equates, do not need to consider the impact of the length of snakelike test electrode on final testing result, make to utilize the measured puncture voltage of the semi-conductor test structure of the embodiment of the present invention puncture voltage between adjacent interconnection line under simulating actual conditions better, thereby improved the accuracy of test result.
Third embodiment of the invention also provides the method for testing of the semi-conductor test structure of another kind of employing as shown in Fig. 5 or Fig. 8, comprising:
Between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply positive test voltage, make diode current flow, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test;
Between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply negative test voltage, make diode cut-off, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test;
The identical impact on dielectric breakdown test of each position voltage according to the test result judgement of twice test at snakelike test electrode.
Concrete, described dielectric breakdown test is dielectric breakdown (TDDB) test with time correlation, comprise two kinds of mode: constant voltage TDDB and ramp voltage TDDB, utilize the described dielectric breakdown test snakelike test electrode of acquisition and the first pectination test electrode of both sides, breakdown time and the puncture voltage between the second pectination test electrode.The described concrete grammar of testing with the dielectric breakdown (TDDB) of time correlation please refer to the associated description in the second embodiment, and therefore not to repeat here.
Because diode has one-way conduction characteristic, between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply positive test voltage, diode current flow, described positive test voltage specifically comprises: by described the first pectination test electrode, the second pectination test electrode ground connection, at the first test lead, apply the positive test voltage that punctures, or at described the first pectination test electrode, the second pectination test electrode, apply the negative test voltage that punctures, the first test lead ground connection.Due to diode current flow, the voltage of the first test lead and the second test lead is equal, and therefore the voltage of each position of described snakelike test electrode all equates, now, puncture voltage and the accuracy of breakdown time of utilizing described semi-conductor test structure to record are higher.
And apply negative test voltage between described the first test lead and the first pectination test electrode, the second pectination test electrode, diode cut-off, described negative test voltage specifically comprises: by described the first pectination test electrode, the second pectination test electrode ground connection, at the first test lead, apply the negative test voltage that punctures, or at described the first pectination test electrode, the second pectination test electrode, apply the positive test voltage that punctures, the first test lead ground connection.Due to diode cut-off, be equivalent to only at the two ends of described snakelike test electrode, apply test voltage, owing to thering is leakage current between snakelike test electrode and the first pectination test electrode, the second pectination test electrode, therefore, the voltage of each position of described snakelike test electrode is unequal, now, puncture voltage and the accuracy of breakdown time of utilizing described semi-conductor test structure to record are lower.
The puncture voltage and the breakdown time that by more described twice test, obtain, can judge the whether identical impact on dielectric breakdown test of each position voltage at snakelike test electrode.And because the whether identical test on the impact of dielectric breakdown test of each position voltage of described snakelike test electrode is to carry out in same semi-conductor test structure, only need to change the wherein test voltage of several test leads, testing cost is lower.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (15)
1. a semi-conductor test structure, is characterized in that, comprising: substrate, is positioned at the first interlayer dielectric layer of described substrate surface; Be positioned at the first pectination test electrode and the second pectination test electrode on described the first interlayer dielectric layer surface, described the first pectination test electrode and the second pectination test electrode are oppositely arranged and the staggered phase embedding of the broach metal wire of described the first pectination test electrode and the second pectination test electrode; Snakelike test electrode between described the first pectination test electrode and the second pectination test electrode, described snakelike test electrode is isolated by the broach metal wire of the first pectination test electrode and the second pectination test electrode, and the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode electric isolation; The two ends of described snakelike test electrode are connected with the first test lead, and the centre position of described snakelike test electrode is connected with the second test lead, and described the first test lead is connected with the second test lead.
2. semi-conductor test structure as claimed in claim 1, it is characterized in that, also comprise: the first metal layer between described substrate and the first interlayer dielectric layer, be positioned at the first metal layer surface and run through the first conductive plunger of the first interlayer dielectric layer, described snakelike test electrode is positioned at the first conductive plunger surface and described the first conductive plunger corresponding to the position of snakelike test electrode, the first metal layer being connected with first conductive plunger at described snakelike test electrode two ends is as the first test lead, the first metal layer being connected with first conductive plunger in described snakelike test electrode centre position is as the second test lead.
3. semi-conductor test structure as claimed in claim 2, is characterized in that, the position that described the first conductive plunger contacts with snakelike test electrode is uniformly distributed in described snakelike test electrode surface.
4. semi-conductor test structure as claimed in claim 1, it is characterized in that, also comprise: the second interlayer dielectric layer that is positioned at described the first interlayer dielectric layer surface, be positioned at described snakelike test electrode surface and run through the second conductive plunger of described the second interlayer dielectric layer and be positioned at described the second conductive plunger, second metal level on the second interlayer dielectric layer surface, described the second conductive plunger is corresponding to the position of snakelike test electrode, the second metal level being connected with second conductive plunger at described snakelike test electrode two ends is as the first test lead, the second metal level being connected with second conductive plunger in described snakelike test electrode centre position is as the second test lead.
5. semi-conductor test structure as claimed in claim 4, is characterized in that, the position that described the second conductive plunger contacts with snakelike test electrode is uniformly distributed in described snakelike test electrode surface.
6. semi-conductor test structure as claimed in claim 1, it is characterized in that, also comprise: the diode between described the first test lead, the second test lead, the anode of described diode is connected with the first test lead, and the negative electrode of described diode is connected with the second test lead.
7. semi-conductor test structure as claimed in claim 1, is characterized in that, described the first pectination test electrode, the second pectination test electrode electricity connect.
8. semi-conductor test structure as claimed in claim 1, is characterized in that, the material of described the first pectination test electrode, the second pectination test electrode and snakelike test electrode is copper or aluminium.
9. semi-conductor test structure as claimed in claim 1, is characterized in that, the spacing between described the first pectination test electrode, the second pectination test electrode and snakelike test electrode is the minimum spacing between the interconnection line of current design rule defined.
10. adopt a method of testing for semi-conductor test structure as claimed in claim 1, it is characterized in that, comprising:
Between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply test voltage, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test.
11. method of testings as claimed in claim 10, is characterized in that, described dielectric breakdown test comprises the dielectric breakdown test of constant voltage and time correlation and the test of the dielectric breakdown of ramp voltage and time correlation.
12. 1 kinds of method of testings that adopt semi-conductor test structure as claimed in claim 6, is characterized in that, comprising:
Between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply positive test voltage, make diode current flow, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test;
Between described the first test lead and the first pectination test electrode, the second pectination test electrode, apply negative test voltage, make diode cut-off, the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode are carried out to dielectric breakdown test;
The identical impact on dielectric breakdown test of each position voltage according to the test result judgement of twice test at snakelike test electrode.
13. method of testings as claimed in claim 12, is characterized in that, described dielectric breakdown test comprises: the dielectric breakdown test of constant voltage and time correlation and the test of the dielectric breakdown of ramp voltage and time correlation.
14. method of testings as claimed in claim 12, it is characterized in that, between described the first test lead and the first pectination test electrode, the second pectination test electrode, applying positive test voltage is: at described the first test lead, apply the positive test voltage that punctures, described the first pectination test electrode, the second pectination test electrode ground connection; Or described the first test lead ground connection, applies the negative test voltage that punctures at described the first pectination test electrode, the second pectination test electrode.
15. method of testings as claimed in claim 12, it is characterized in that, between described the first test lead and the first pectination test electrode, the second pectination test electrode, applying negative test voltage is: at described the first test lead, apply the negative test voltage that punctures, described the first pectination test electrode, the second pectination test electrode ground connection; Or described the first test lead ground connection, applies the positive test voltage that punctures at described the first pectination test electrode, the second pectination test electrode.
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