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CN104170068B - 用于低蚀刻速率硬模膜的具有氧掺杂的pvd氮化铝膜 - Google Patents

用于低蚀刻速率硬模膜的具有氧掺杂的pvd氮化铝膜 Download PDF

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CN104170068B
CN104170068B CN201380014792.1A CN201380014792A CN104170068B CN 104170068 B CN104170068 B CN 104170068B CN 201380014792 A CN201380014792 A CN 201380014792A CN 104170068 B CN104170068 B CN 104170068B
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hard mold
oxygen
aluminium nitride
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曹勇
大东和也
拉尹库曼·雅卡尔尤
唐先明
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Abstract

本发明大体涉及掺杂的氮化铝硬模以及制造掺杂的氮化铝硬模的方法。在形成所述氮化铝硬模时通过添加少量掺杂剂，例如氧，可显著降低所述硬模的湿蚀刻速率。此外，与无掺杂的氮化铝硬模相比，硬模的颗粒尺寸由于掺杂剂的存在而缩小。缩小的颗粒尺寸使硬模中的特征更平滑，导致使用所述硬模时更加精确的下层蚀刻。

Description

用于低蚀刻速率硬模膜的具有氧掺杂的PVD氮化铝膜
技术领域
本发明的实施方式大体涉及掺杂的氮化铝硬模(hardmask)以及制造掺杂的氮化铝硬模的方法。
背景技术
随着半导体器件尺寸持续缩小，形成此类小器件所需的精确度增加。不仅缩小半导体芯片尺寸已变得益发困难，更有甚者，缩小形成电气互连的个别特征的尺寸也变得益发困难。
制造半导体芯片要执行许多工艺。图案化是这些工艺中之一。在图案化工艺中，掩模，比如硬模，被形成在要被图案化的一或多个层之上。之后，使用所述硬模让下层或这些下层暴露至蚀刻剂，以除去暴露的材料(即未被所述硬模或光掩模覆盖的材料)并转印所述硬模的图案至所述下层或这些下层。
在理想的蚀刻工艺中，暴露材料被蚀刻而所述硬模不被蚀刻。换句话说，所述硬模理想上对蚀刻剂是惰性的，所述蚀刻剂可采用液态蚀刻剂或气态蚀刻剂的形态。若所述硬模对所述蚀刻剂是惰性的，则所述硬模的特征可很好地转印至所述下层或这些下层。
自然地，制造化学惰性的硬模并不实际。因此，硬模的一些蚀刻在意料之中。由于硬模被蚀刻，因此损害了图案转印的精确度。
因此，本领域中对用来从硬模转印图案至下层的蚀刻工艺是更加化学惰性的硬模有需要。
发明内容
本发明大体涉及掺杂的氮化铝硬模以及制造掺杂的氮化铝硬模的方法。在形成氮化铝硬模时通过添加少量掺杂剂，例如氧，能显著降低所述硬模的湿蚀刻速率。此外，与无掺杂的氮化铝硬模相比，硬模的颗粒尺寸由于掺杂剂的存在而缩小。缩小的颗粒尺寸使硬模内的特征更平滑，导致使用所述硬模时更加精确的下层蚀刻。
在一个实施方式中，硬模包含氮化铝与掺杂剂。在另一实施方式中，制造硬模的方法包含在含有惰性气体、含氮气体及含氧气体的气氛中溅射铝靶材，以形成氧掺杂的氮化铝材料，其中含氮气体的量比含氧气体的量的两倍更多。所述方法另外包含图案化所述氧掺杂的氮化铝材料以形成硬模。
在另一实施方式中，制造硬模的方法包含在含有惰性气体、含氮气体及含氧气体的气氛中溅射氮化铝靶材，以形成氧掺杂的氮化铝材料，其中含氮气体的量比含氧气体的量的两倍更多。所述方法另外包含图案化所述氧掺杂的氮化铝材料以形成硬模。
附图说明
为了能够详细了解本发明的上述特征，可通过参考实施方式得到上文简要概述的本发明的更具体的描述，这些实施方式的一些实施方式在附图中示出。但应注意到，附图仅示出本发明的典型实施方式，因此不应视为对本发明的范围的限制，因为本发明可允许其他等同效果的实施方式。
图1是根据一个实施方式的物理气相沉积(PVD)设备的简要截面图。
图2是形成在一层之上的硬模的简要截面图。
图3A和图3B分别示出未掺杂的氮化铝膜及氧掺杂的氮化铝膜的颗粒结构。
为了帮助理解，已尽可能使用相同的标记数字来表示各附图共有的相同元件。应理解到在一个实施方式中揭示的元件可有利地用于其他实施方式而不需特定详述。
具体实施方式
本发明大体涉及掺杂的氮化铝硬模以及制造掺杂的氮化铝硬模的方法。在形成氮化铝硬模时通过添加少量掺杂剂，例如氧，能显著降低硬模的湿蚀刻速率。此外，与无掺杂的氮化铝硬模相比，硬模的颗粒尺寸由于掺杂剂的存在而缩小。缩小的颗粒尺寸使硬模内的特征更平滑，导致使用所述硬模时更加精确的下层蚀刻。
图1是根据一个实施方式的PVD设备100的简要截面图。设备100包含腔室主体102。气体从气源104被输送至腔室主体102。溅射靶材108被设置在腔室主体102内与基板114相对。溅射靶材108被接合至背板106。从电源110施加偏压至背板106。基板114被设置在基板支撑件112上。可由电源116施加偏压于基板支撑件112。应了解基板支撑件112可电气漂浮或直接接地。电源110可包含DC电源、脉冲DC电源、AC电源或RF电源。背板106是导电的。
如上所述，本文揭示的实施方式涉及一种硬模及形成所述硬模的方法。图2是形成在层202之上的硬模204的简要截面图。硬模204已被图案化以使特征206形成在硬模204中，以暴露层202的部分208。在一个实施方式中，层202可包含钨。在另一实施方式中，层202可包含多晶硅。硬模204包含掺杂的氮化铝。掺杂剂可包含一或多种选自由氧、硅、氟、碳及这些物质的组合组成的群组的掺杂剂。硬模204可包含可高达25原子百分比的量的掺杂剂。
所述掺杂剂具有若干益处。当掺杂剂是氧时，氧能够控制硬模204的应力。当没有氧做为掺杂剂时，未掺杂的氮化铝硬模会有约400MPa的张应力。然而，氧能显著减少应力至非常低的张应力或甚至压应力。在一个实施方式中，应力水平是约0，以致硬模204内实质上无应力。硬模204的应力抵消全部下层的残余应力。因此，可调整硬模204的应力以抵消其上设置硬模204的结构的应力。
此外，氧掺杂剂缩小所形成的硬模204的颗粒尺寸。确切地说，与未掺杂的氮化铝硬模相比，氧掺杂的氮化铝硬模具有较小的颗粒尺寸。通过XRD(X射线衍射)分析测量时，未掺杂的氮化铝硬模具有[0002]峰。但是，氧掺杂的氮化铝硬模虽仍有[0002]峰，但氧掺杂的氮化铝硬模的[0002]峰的高度是未掺杂的氮化铝硬模[0002]峰的高度的约1/10。此外，氧掺杂的氮化铝硬模的密度比未掺杂的氮化铝硬模的密度低。
由于氧掺杂剂的存在，所形成的硬模有较小的颗粒尺寸(与未掺杂的氮化铝硬模相比)，这使特征206更平滑，因而导致在蚀刻下层202的图案化工艺期间下层202的较陡(sharper)且较平直的蚀刻。此外，与未掺杂的氮化铝硬模相比，氧掺杂的氮化铝硬模具有低很多的蚀刻速率。确切地说，氧掺杂的氮化铝硬模在稀释的HF溶液(100：1)中具有每分钟约4埃的湿蚀刻速率，而未掺杂的氮化铝硬模具有每分钟约18埃的湿蚀刻速率。在一个实施方式中，因此，如上所述，虽然完全惰性的硬模无法通过添加诸如氧之类的掺杂剂形成，但更加耐受蚀刻的硬模通过使用诸如氧之类的掺杂剂而形成。由于更耐蚀刻的硬模，氧掺杂的氮化铝硬模在蚀刻工艺期间维持其结构(优于未掺杂的氮化铝硬模)，因而在下层202中导致界定较佳的特征。
在形成氧掺杂的氮化铝硬模时，使用这样微量的氧以致少量至无铝－氧键形成。可通过在其之上含有层202的基板114对面提供铝靶材108来形成硬模204。从气源104将惰性气体、含氮气体及含氧气体全引到腔室主体102。由电源110施加电偏压至背板106，而基板114在基板支撑件112上电气接地。电源110施加DC电偏压至溅射靶材108，以在腔室主体内产生等离子体并从靶材108射出铝原子。这些铝原子与氮反应形成氮化铝。氧没有与铝反应因而对形成在基板114上的氮化铝层进行掺杂。在一个实施方式中，靶材108可包含氮化铝，而电源110包含RF电源。在一个实施方式中，溅射靶材可在毒化模式(poisoned mode)下操作，此时靶材包含铝，但氮化铝膜形成在暴露的靶材表面上。因此，在溅射工艺开始时，从溅射靶材溅射出氮化铝。
在一个实施方式中，含氮气体包含N2且含氧气体包含O2。惰性气体可包含氩。惰性气体与含氮气体的比可介于约1：1至约1：20之间。在一个实施方式中，惰性气体与含氮气体的比可以是约1：5。含氮气体与含氧气体的比大于2：1并且可介于约100：1至约20：1之间。在一个实施方式中，含氮气体与含氧气体的比可以是约50：3。
一旦沉积，氧掺杂的硬模可具有高达约25原子百分比的氧含量。在一个实施方式中，氧含量可高达约10原子百分比。可维持腔室主体102的腔室压力在约1毫托耳与约100毫托耳之间，以及基板支撑件112温度在约摄氏25度与约摄氏500度之间。可由电源110供给约1千瓦与约20千瓦之间的功率至溅射靶材108。所形成的掺杂的氮化铝硬模是多晶的。图3A和图3B分别示出未掺杂的氮化铝膜及氧掺杂的氮化铝膜的颗粒结构。如图3B所示，颗粒尺寸显著缩小。
通过使用掺杂剂，比如氧，可制造出与未掺杂的氮化铝硬模相比具有较慢的蚀刻速率的氮化铝硬模。此外，掺杂的氮化铝硬模有较小的颗粒尺寸，因此，图案化时有更平滑的表面。由此，掺杂的氮化铝硬模虽然并非化学惰性，但可容许在图案化工艺期间在掺杂的氮化铝硬模下的层中形成更精细、更复杂的特征。
虽然前述内容针对本发明的实施方式，但在不背离本发明的基本范围的情况下可设计出本发明的其他及进一步的实施方式，且本发明的范围由下面的要求保护的范围确定。

Claims (13)

1.一种硬模，包含：
氧掺杂的多晶氮化铝材料。
2.如权利要求1所述的硬模，其中所述氧以高达25原子百分比的量存在。
3.如权利要求2所述的硬模，其中所述硬模具有[0002]峰，所述[0002]峰比未掺杂的氮化铝硬模的硬模的[0002]峰小。
4.如权利要求3所述的硬模，其中所述硬模所具有的颗粒尺寸小于未掺杂的氮化铝硬模的颗粒尺寸，其中氧掺杂的氮化铝硬模的[0002]峰是所述未掺杂的氮化铝硬模的[0002]峰的尺寸的1/10。
5.如权利要求1所述的硬模，其中所述硬模具有在-5MPa与5MPa之间的应力。
6.一种制造硬模的方法，包含：
在含有惰性气体、含氮气体及含氧气体的气氛中溅射铝靶材，以沉积氧掺杂的多晶氮化铝材料，其中所述含氮气体的量比所述含氧气体的量的两倍更多；及
图案化所述氧掺杂的多晶氮化铝材料以形成所述硬模。
7.如权利要求6所述的方法，其中所述含氮气体包含N2。
8.如权利要求7所述的方法，其中所述含氧气体包含O2。
9.如权利要求8所述的方法，其中所述惰性气体与所述N2的比介于1：1至1：20之间，且其中所述N2与所述O2的比介于100：1至20：1之间。
10.如权利要求6所述的方法，其中在摄氏25度与摄氏500度之间的温度下发生溅射，且其中在1毫托耳与100毫托耳之间的腔室压力下发生溅射。
11.如权利要求6所述的方法，其中所述溅射是DC溅射或脉冲DC溅射。
12.一种制造硬模的方法，包含：
在含有惰性气体、含氮气体及含氧气体的气氛中溅射氮化铝靶材，以形成氧掺杂的多晶氮化铝材料，其中所述含氮气体的量比所述含氧气体的量的两倍更多；及
图案化所述氧掺杂的多晶氮化铝材料以形成所述硬模。
13.如权利要求12所述的方法，其中所述溅射是射频溅射。
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