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CN104124946B - semi-dynamic trigger - Google Patents

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CN104124946B
CN104124946B CN201310144046.6A CN201310144046A CN104124946B CN 104124946 B CN104124946 B CN 104124946B CN 201310144046 A CN201310144046 A CN 201310144046A CN 104124946 B CN104124946 B CN 104124946B
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potential
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CN104124946A (en
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谢文斌
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MStar Semiconductor Inc Taiwan
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Abstract

本发明提供一种半动态触发器。选择电路自数据信号与测试信号中选择输入信号。充放电电路根据输入信号、时脉信号及调整信号为中间节点充电/放电。第一储存电路储存中间节点的电位。调整电路根据时脉信号及中间节点的电位产生调整信号。输出电路根据时脉信号及中间节点的电位调整输出节点的电位。第二储存电路储存输出节点的电位。重置电路系用以重置或设定输出节点的电位。开关连接于调整电路与充放电电路间,并且在正常运作模式中为导通。

The present invention provides a semi-dynamic trigger. A selection circuit selects an input signal from a data signal and a test signal. A charge-discharge circuit charges/discharges an intermediate node according to an input signal, a clock signal and an adjustment signal. A first storage circuit stores the potential of the intermediate node. An adjustment circuit generates an adjustment signal according to the clock signal and the potential of the intermediate node. An output circuit adjusts the potential of an output node according to the clock signal and the potential of the intermediate node. A second storage circuit stores the potential of the output node. A reset circuit is used to reset or set the potential of the output node. A switch is connected between the adjustment circuit and the charge-discharge circuit and is turned on in a normal operation mode.

Description

半动态触发器semi-dynamic trigger

技术领域technical field

本发明涉及逻辑电路,尤其是涉及半动态触发器的改良技术。The invention relates to a logic circuit, in particular to an improved technology of a semi-dynamic flip-flop.

背景技术Background technique

半动态触发器(semi-dynamic flip-flop)是一种被普遍应用在数字逻辑电路中的元件,其前端电路为动态,而后端电路为静态。图1绘示一种以互补金氧半导体(CMOS)实现的典型半动态触发器电路。此触发器100中主要包含放电电路111、预充电电路112、调整电路113、第一储存电路114、输出电路115及第二储存电路116。触发器100的作用在于根据时脉信号CK对输入信号D进行取样,其取样结果为信号Q和QB。以下简略说明触发器100的运作方式。A semi-dynamic flip-flop (semi-dynamic flip-flop) is a component commonly used in digital logic circuits, the front-end circuit of which is dynamic, and the back-end circuit is static. FIG. 1 shows a typical semi-dynamic flip-flop circuit implemented in complementary metal oxide semiconductor (CMOS). The flip-flop 100 mainly includes a discharge circuit 111 , a pre-charge circuit 112 , an adjustment circuit 113 , a first storage circuit 114 , an output circuit 115 and a second storage circuit 116 . The function of the flip-flop 100 is to sample the input signal D according to the clock signal CK, and the sampling results are signals Q and QB. The operation of the flip-flop 100 is briefly described below.

当时脉信号CK的降缘出现时,触发器100进入预充电阶段。透过预充电电路112中的晶体管P1,供电端VDD会对节点X充电,使其电压被拉升至高电位。第一储存电路114会储存节点X的高电位。输出电路115中的晶体管P2、N5都被关闭,等效于截断中间节点X与输出节点Q间的连接,令第二储存电路116继续储存取样结果QB的先前状态。在时脉信号CK转为低电位后,调整电路113中的延迟后时脉信号CKD随后也会具有低电位,因此使得调整电路113的输出节点Y必然具有高电位,进而令放电电路111中的晶体管N3导通。不过由于晶体管N1被时脉信号CK关闭,无论输入信号D为何,都不会影响节点X的电位。When the falling edge of the clock signal CK occurs, the flip-flop 100 enters the pre-charging phase. Through the transistor P1 in the pre-charging circuit 112 , the power supply terminal VDD charges the node X, so that its voltage is pulled up to a high potential. The first storage circuit 114 stores the high potential of the node X. The transistors P2 and N5 in the output circuit 115 are turned off, which is equivalent to cutting off the connection between the intermediate node X and the output node Q, so that the second storage circuit 116 continues to store the previous state of the sampling result QB. After the clock signal CK turns to a low potential, the delayed clock signal CKD in the adjustment circuit 113 will also have a low potential, so that the output node Y of the adjustment circuit 113 must have a high potential, and then the discharge circuit 111 will have a high potential. Transistor N3 is turned on. However, since the transistor N1 is turned off by the clock signal CK, no matter what the input signal D is, it will not affect the potential of the node X.

当时脉信号CK的升缘出现时,触发器100进入评估阶段(亦即对输入信号D进行取样的阶段)。此时若输入信号D具有低电位,节点X的电位仍旧不会受到影响,继续保持在高电位。若先前节点Q具有低电位,则晶体管N5的导通不会对取样结果QB造成影响。相对地,若先前节点Q具有高电位,则晶体管N5的导通会将节点Q的电压拉低至低电位,进而将取样结果QB改变为具有高电位。时脉信号CK的升缘出现后再经过调整电路113中的三个逻辑门贡献的延迟时间,节点Y会转变为具有低电位,使得晶体管N3被关闭。关闭晶体管N3可防止输入信号D随后由低电位转变为高电位时,放电电路111将节点X放电。这种设计令触发器100据有边缘触发(edge-triggered)的特性。When the rising edge of the clock signal CK occurs, the flip-flop 100 enters the evaluation phase (ie, the sampling phase of the input signal D). At this time, if the input signal D has a low potential, the potential of the node X will still not be affected and remain at a high potential. If the previous node Q has a low potential, the conduction of the transistor N5 will not affect the sampling result QB. Conversely, if the node Q has a high potential before, the turn-on of the transistor N5 will pull down the voltage of the node Q to a low potential, and then change the sampling result QB to have a high potential. After the rising edge of the clock signal CK occurs, after the delay time contributed by the three logic gates in the adjustment circuit 113 , the node Y will change to a low potential, so that the transistor N3 is turned off. Turning off the transistor N3 can prevent the discharge circuit 111 from discharging the node X when the input signal D subsequently changes from a low potential to a high potential. This design enables the flip-flop 100 to have edge-triggered characteristics.

触发器100进入评估阶段时,若输入信号D具有高电位,放电电路111会将节点X放电至低电位。第一储存电路114随后会储存节点X的低电位。电位降低后的节点X会令输出电路115中的晶体管P2导通,因而使节点Y具有高电位,进而使取样结果QB具有低电位。When the flip-flop 100 enters the evaluation stage, if the input signal D has a high potential, the discharge circuit 111 will discharge the node X to a low potential. The first storage circuit 114 then stores the low potential of the node X. The lowered node X will turn on the transistor P2 in the output circuit 115 , so that the node Y will have a high potential, and then the sampling result QB will have a low potential.

发明内容Contents of the invention

本发明提出一种新的半动态触发器架构,加入重置功能及测试功能。借由适当地配置电路中的逻辑元件,根据本发明的半动态触发器不会因加入新的功能而导致半动态触发器的最高运作速度下降。The present invention proposes a new semi-dynamic flip-flop architecture, adding a reset function and a test function. By properly configuring the logic elements in the circuit, the half-dynamic flip-flop according to the present invention will not reduce the maximum operating speed of the half-dynamic flip-flop due to the addition of new functions.

根据本发明的一具体实施例为一种半动态触发器,其中包含一选择电路、一充放电电路、一第一储存电路、一调整电路、一输出电路、一第二储存电路、一重置电路及一开关。该选择电路用以根据一选择信号自一数据信号与一测试信号中选择一输入信号。该充放电电路连接一中间节点,并根据该输入信号、一时脉信号及一调整信号为该中间节点充电或放电。该第一储存电路连接该中间节点,并用以储存该中间节点的电位。该调整电路连接于该中间节点与该充放电电路间,并用以根据该时脉信号及该中间节点的电位产生该调整信号。该输出电路连接于该中间节点与一输出节点间,并用以根据该时脉信号及该中间节点的电位调整该输出节点的电位。该第二储存电路连接该输出节点,并用以储存该输出节点的电位。该重置电路用以重置或设定该输出节点的电位。该开关连接于该调整电路与该充放电电路间。当该重置电路重置或设定该输出节点的电位,该开关被设定为截断该调整电路与该充放电电路间的连接。当该半动态触发器处于一正常运作模式,该开关被设定为导通。A specific embodiment according to the present invention is a semi-dynamic trigger, which includes a selection circuit, a charging and discharging circuit, a first storage circuit, an adjustment circuit, an output circuit, a second storage circuit, a reset Circuit and a switch. The selection circuit is used for selecting an input signal from a data signal and a test signal according to a selection signal. The charging and discharging circuit is connected to an intermediate node, and charges or discharges the intermediate node according to the input signal, a clock signal and an adjustment signal. The first storage circuit is connected to the intermediate node and used for storing the potential of the intermediate node. The adjusting circuit is connected between the intermediate node and the charging and discharging circuit, and is used for generating the adjusting signal according to the clock signal and the potential of the intermediate node. The output circuit is connected between the intermediate node and an output node, and is used for adjusting the potential of the output node according to the clock signal and the potential of the intermediate node. The second storage circuit is connected to the output node and used for storing the potential of the output node. The reset circuit is used for resetting or setting the potential of the output node. The switch is connected between the adjustment circuit and the charging and discharging circuit. When the reset circuit resets or sets the potential of the output node, the switch is set to cut off the connection between the adjustment circuit and the charging and discharging circuit. When the half-dynamic flip-flop is in a normal operation mode, the switch is set to be turned on.

附图说明Description of drawings

为让本发明的上述目的、特征和优点能更明显易懂,以下结合附图对本发明的具体实施方式作详细说明,其中:In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:

图1绘示一以互补金氧半导体实现的典型半动态触发器电路。FIG. 1 shows a typical semi-dynamic flip-flop circuit implemented by CMOS.

图2为根据本发明的一实施例中的半动态触发器的电路图。FIG. 2 is a circuit diagram of a semi-dynamic flip-flop according to an embodiment of the invention.

图3为本发明的一实施例中的控制电路的信号相对关系。FIG. 3 is a relative relationship of signals of the control circuit in an embodiment of the present invention.

图中元件标号说明:Explanation of component numbers in the figure:

100、200:半动态触发器 111、211:放电电路100, 200: semi-dynamic trigger 111, 211: discharge circuit

112、212:预充电电路 113、213:调整电路112, 212: pre-charging circuit 113, 213: adjusting circuit

114、214:第一储存电路 115、215:输出电路114, 214: first storage circuit 115, 215: output circuit

116、216:第二储存电路 N1~N7、P1~P6:晶体管116, 216: second storage circuits N1-N7, P1-P6: transistors

217:选择电路 218:开关217: selection circuit 218: switch

219:控制电路219: Control circuit

具体实施方式detailed description

根据本发明的一实施例为一半动态触发器,其电路架构如图2所示。半动态触发器200包含一充放电电路(包含放电电路211和预充电电路212)、一调整电路213、一第一储存电路214、一输出电路215、一第二储存电路216、一选择电路217、一重置电路(包含晶体管N6、N7、P3~P6)、一开关218以及一控制电路219。于图2中,开关218系以传输门表示,也就是由一个NMOS晶体管和一个PMOS晶体管组合而成的逻辑门,但开关218的实施方式不以此为限。控制电路219由两个反相器以及一NAND逻辑门组成。于实际应用中,半动态触发器200可被整合在集成电路中与其他电路协同运作,亦可独立存在。An embodiment according to the present invention is a half dynamic flip-flop, the circuit structure of which is shown in FIG. 2 . The semi-dynamic flip-flop 200 includes a charging and discharging circuit (comprising a discharging circuit 211 and a pre-charging circuit 212), an adjusting circuit 213, a first storage circuit 214, an output circuit 215, a second storage circuit 216, and a selection circuit 217 , a reset circuit (including transistors N6 , N7 , P3 ˜ P6 ), a switch 218 and a control circuit 219 . In FIG. 2 , the switch 218 is represented by a transmission gate, that is, a logic gate composed of an NMOS transistor and a PMOS transistor, but the implementation of the switch 218 is not limited thereto. The control circuit 219 is composed of two inverters and a NAND logic gate. In practical applications, the half-dynamic flip-flop 200 can be integrated into an integrated circuit to cooperate with other circuits, or exist independently.

第一储存电路214系用以协助储存中间节点X的电位。第二储存电路216系用以协助储存输出节点Q、QB的电位。在这个实施例中,第一储存电路214和第二储存电路216各自由两个反相器组成,但实务上不以此为限。The first storage circuit 214 is used to assist in storing the potential of the intermediate node X. The second storage circuit 216 is used to assist in storing the potentials of the output nodes Q, QB. In this embodiment, each of the first storage circuit 214 and the second storage circuit 216 is composed of two inverters, but it is not limited to this in practice.

半动态触发器200的作用在于根据时脉信号CK对输入信号D进行取样,其取样结果输出为信号Q和QB。设定信号SN系用以将取样结果QB强制设定为具有高电位。重置信号RN系用以将取样结果QB强制设定为具有低电位。在选择电路217中,互为反相信号的选择信号SE与SEB系用以自数据信号D和测试信号SI中选择一个信号,作为实际提供至半动态触发器200的输入信号。测试者可选择以测试信号SI取代数据信号D,以排除数据信号D的影响,独立测试半动态触发器200是否能正常运作。以下说明半动态触发器200的运作方式。The function of the half dynamic flip-flop 200 is to sample the input signal D according to the clock signal CK, and output the sampling result as signals Q and QB. The setting signal SN is used to force the sampling result QB to have a high potential. The reset signal RN is used to force the sampling result QB to have a low potential. In the selection circuit 217 , the selection signals SE and SEB, which are mutually inverse signals, are used to select one signal from the data signal D and the test signal SI as an input signal actually provided to the half dynamic flip-flop 200 . The tester can choose to replace the data signal D with the test signal SI to exclude the influence of the data signal D, and independently test whether the semi-dynamic flip-flop 200 can work normally. The operation of the semi-dynamic flip-flop 200 is described below.

于此实施例中,当设定信号SN和重置信号RN皆具有高电位,控制电路219产生的致能信号SR_EN会具有低电位。在这个情况下,传输门218会导通,连接节点Y和调整电路213。此外,因为致能信号SR_EN和重置信号R(为重置信号RN的反相信号)处于低电位,所以重置电路中的晶体管N6、N7、P4~P6皆被关闭,而晶体管P3为导通。本发明所属技术领域中普通技术人员可理解,此情况下的半动态触发器200等效于图1呈现的半动态触发器100,其运作方式不再赘述。In this embodiment, when both the set signal SN and the reset signal RN have a high potential, the enable signal SR_EN generated by the control circuit 219 has a low potential. In this case, the transmission gate 218 is turned on, connecting the node Y and the adjustment circuit 213 . In addition, because the enable signal SR_EN and the reset signal R (which is the inversion signal of the reset signal RN) are at low potential, the transistors N6, N7, P4-P6 in the reset circuit are all turned off, and the transistor P3 is the conduction signal. Pass. Those of ordinary skill in the technical field of the present invention can understand that the semi-dynamic flip-flop 200 in this case is equivalent to the semi-dynamic flip-flop 100 shown in FIG. 1 , and its operation mode will not be repeated here.

控制电路219的输入信号为设定信号SN和重置信号RN,而输出信号为重置信号R、致能信号SR_EN及其反相信号SR_ENB。这几个信号的相对关系如图3所示。由图2可看出,基于控制电路219中的逻辑门特性,当控制电路219的设定信号SN具有低电位或是重置信号RN具有低电位时,控制电路219产生的致能信号SR_EN皆为具有高电位。当致能信号SR_EN具有高电位,传输门218不会导通,且重置电路中的晶体管N6必为导通、晶体管P3必为关闭。也就是说,当设定信号SN和重置信号RN中的任一个信号具有低电位,节点Y便会被放电至低电位,且放电电路211和预充电电路212皆不再对取样信号Q/QB造成影响。The input signals of the control circuit 219 are the set signal SN and the reset signal RN, and the output signals are the reset signal R, the enable signal SR_EN and its inverted signal SR_ENB. The relative relationship of these signals is shown in Figure 3. It can be seen from FIG. 2 that based on the characteristics of the logic gate in the control circuit 219, when the set signal SN of the control circuit 219 has a low potential or the reset signal RN has a low potential, the enable signal SR_EN generated by the control circuit 219 is both to have a high potential. When the enable signal SR_EN has a high potential, the transmission gate 218 will not be turned on, and the transistor N6 in the reset circuit must be turned on, and the transistor P3 must be turned off. That is to say, when any one of the set signal SN and the reset signal RN has a low potential, the node Y will be discharged to a low potential, and the discharging circuit 211 and the pre-charging circuit 212 will no longer sample the signal Q/ The QB makes an impact.

须说明的是,此实施例中的设定信号SN与重置信号RN不会被同时设定为具有低电位。It should be noted that, in this embodiment, the set signal SN and the reset signal RN are not set to have a low potential at the same time.

当控制电路219的设定信号SN具有低电位而重置信号RN具有高电位,重置电路中连接电压源VDD的晶体管P4、P5为导通,而晶体管N7为关闭,使得连接于晶体管N7源极的中间节点X保持高电位。晶体管P6亦导通,所以取样信号QB亦具有高电位。由于晶体管P2被关闭,且晶体管N4被导通,因此,当时脉信号CK具高电位,取样信号Q的节点被拉至低电位;当时脉信号CK具低电位,取样信号Q的节点因为位于输出为高电位QB的反相器的另一端,因此取样信号Q亦维持于低电位。也就是说,无论时脉信号CK具有高电位或低电位,输出电路215皆不可能将取样信号Q拉升为高电位。易言之,取样信号Q被强制设定为具有低电位,而取样信号QB被强制设定为具有高电位。When the setting signal SN of the control circuit 219 has a low potential and the reset signal RN has a high potential, the transistors P4 and P5 connected to the voltage source VDD in the reset circuit are turned on, and the transistor N7 is turned off, so that the source connected to the transistor N7 The middle node X of the pole remains at a high potential. The transistor P6 is also turned on, so the sampling signal QB also has a high potential. Since the transistor P2 is turned off and the transistor N4 is turned on, when the clock signal CK has a high potential, the node of the sampling signal Q is pulled to a low potential; when the clock signal CK has a low potential, the node of the sampling signal Q is at the output The other end of the inverter is the high potential QB, so the sampling signal Q is also maintained at low potential. That is to say, no matter whether the clock signal CK has a high potential or a low potential, the output circuit 215 cannot pull the sampling signal Q to a high potential. In other words, the sampling signal Q is forcibly set to have a low potential, and the sampling signal QB is forcibly set to have a high potential.

当设定信号SN具有高电位而重置信号RN具有低电位,重置电路中的晶体管P4、P5、P6为关闭,晶体管N7为导通,因而使得中间节点X被设定为具有低电位,进而令晶体管P2导通。在这个情况下,取样信号Q被强制设定为具有高电位,而取样信号QB被强制设定为具有低电位。When the setting signal SN has a high potential and the reset signal RN has a low potential, the transistors P4, P5, and P6 in the reset circuit are turned off, and the transistor N7 is turned on, so that the intermediate node X is set to have a low potential, Further, the transistor P2 is turned on. In this case, the sampling signal Q is forcibly set to have a high potential, and the sampling signal QB is forcibly set to have a low potential.

由图2可看出,调整电路213根据时脉信号CK与中间节点X的电位产生的调整信号用以控制晶体管N3。传输门218的主要作用在于选择性地排除中间节点X与时脉信号CK对节点Y的影响,使节点Y的电位仅受晶体管N6的控制,进而避免放电电路211在半动态触发器200被重置或设定时影响中间节点X的电位。It can be seen from FIG. 2 that the adjustment signal generated by the adjustment circuit 213 according to the clock signal CK and the potential of the intermediate node X is used to control the transistor N3. The main function of the transmission gate 218 is to selectively eliminate the influence of the intermediate node X and the clock signal CK on the node Y, so that the potential of the node Y is only controlled by the transistor N6, thereby preventing the discharge circuit 211 from being reset in the semi-dynamic flip-flop 200 Affects the potential of the intermediate node X when set or set.

如先前所述,半动态触发器200进入评估阶段时,若输入信号D具有高电位,放电电路211会将中间节点X放电至低电位。值得注意的是,当传输门218为导通时,在时脉信号CK经由调整电路213传递至节点Y的路径中,传输门218亦贡献了一段延迟时间。此一延迟时间的增加(相较于图1中的电路)可延后晶体管N3被关闭的时间,等效于在放电电路211停止为中间节点X放电前,延长容许信号D”达到稳定的时间。因此,虽然选择电路217会导致数据信号D或测试信号SI进入放电电路211的时间被延迟(亦即缩减了容许信号D”达到稳定的时间),但传输门218的存在能相对应地平衡这个问题,因而在加入重置功能及测试功能后可能令半动态触发器200的最高运作速度下降的问题。As mentioned above, when the half-dynamic flip-flop 200 enters the evaluation phase, if the input signal D has a high potential, the discharge circuit 211 will discharge the intermediate node X to a low potential. It should be noted that when the transmission gate 218 is turned on, the transmission gate 218 also contributes a delay time in the path of the clock signal CK transmitted to the node Y via the adjustment circuit 213 . The increase of this delay time (compared with the circuit in FIG. 1 ) can delay the time when the transistor N3 is turned off, which is equivalent to prolonging the time for the allowable signal D" to stabilize before the discharge circuit 211 stops discharging the intermediate node X. Therefore, although the selection circuit 217 will cause the time for the data signal D or the test signal SI to enter the discharge circuit 211 to be delayed (that is, the time for the allowable signal D" to stabilize is reduced), the existence of the transmission gate 218 can correspondingly balance This problem, therefore, may reduce the maximum operating speed of the semi-dynamic flip-flop 200 after adding the reset function and the test function.

须说明的是,实务上,控制电路219产生的信号亦可由外部电路提供。易言之,控制电路219并非半动态触发器200中的必要元件。此外,本发明所属技术领域中普通技术人员可理解,各个电路区块的详细实施方式不以图2所绘示者为限。举例而言,在不改变半动态触发器200的逻辑运作的情况下,放电电路211、预充电电路212、输出电路215都可能包含更多的晶体管。或者,调整电路213中的逻辑门可被其他具有相同运作逻辑的元件取代。It should be noted that, in practice, the signal generated by the control circuit 219 can also be provided by an external circuit. In other words, the control circuit 219 is not a necessary element in the half dynamic flip-flop 200 . In addition, those of ordinary skill in the technical field of the present invention can understand that the detailed implementation of each circuit block is not limited to what is shown in FIG. 2 . For example, without changing the logic operation of the half-dynamic flip-flop 200 , the discharge circuit 211 , the pre-charge circuit 212 , and the output circuit 215 may all include more transistors. Alternatively, the logic gates in the adjustment circuit 213 can be replaced by other components with the same operation logic.

如上所述,本发明提出一种新的半动态触发器架构,加入重置功能及测试功能。借由适当地配置电路中的逻辑元件,根据本发明的半动态触发器不会因加入新的功能而导致半动态触发器的最高运作速度下降。As mentioned above, the present invention proposes a new semi-dynamic flip-flop architecture, adding reset function and test function. By properly configuring the logic elements in the circuit, the half-dynamic flip-flop according to the present invention will not reduce the maximum operating speed of the half-dynamic flip-flop due to the addition of new functions.

虽然本发明已以较佳实施例揭示如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许的修改和完善,因此本发明的保护范围当以权利要求书所界定的为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be defined by the claims.

Claims (2)

1.一种半动态触发器,包含:1. A semi-dynamic trigger comprising: 一选择电路,用以根据一选择信号自一数据信号与一测试信号中选择一输入信号;a selection circuit for selecting an input signal from a data signal and a test signal according to a selection signal; 一充放电电路,连接一中间节点,并根据该输入信号、一时脉信号及一调整信号为该中间节点充电或放电;A charging and discharging circuit, connected to an intermediate node, and charging or discharging the intermediate node according to the input signal, a clock signal and an adjustment signal; 一第一储存电路,连接该中间节点,用以储存该中间节点的电位;a first storage circuit, connected to the intermediate node, for storing the potential of the intermediate node; 一调整电路,连接于该中间节点与该充放电电路间,用以根据该时脉信号及该中间节点的电位产生该调整信号;an adjustment circuit, connected between the intermediate node and the charge-discharge circuit, for generating the adjustment signal according to the clock signal and the potential of the intermediate node; 一输出电路,连接于该中间节点与一输出节点间,用以根据该时脉信号及该中间节点的电位调整该输出节点的电位;an output circuit, connected between the intermediate node and an output node, for adjusting the potential of the output node according to the clock signal and the potential of the intermediate node; 一第二储存电路,连接该输出节点,用以储存该输出节点的电位;a second storage circuit, connected to the output node, for storing the potential of the output node; 一重置电路,用以重置或设定该输出节点的电位;以及a reset circuit for resetting or setting the potential of the output node; and 一开关,连接于该调整电路与该充放电电路间,当该重置电路重置或设定该输出节点的电位,该开关被设定为截断该调整电路与该充放电电路间的连接,当该半动态触发器处于一正常运作模式,该开关被设定为导通。a switch connected between the adjustment circuit and the charging and discharging circuit, when the reset circuit resets or sets the potential of the output node, the switch is set to cut off the connection between the adjusting circuit and the charging and discharging circuit, When the half-dynamic flip-flop is in a normal operation mode, the switch is set to be turned on. 2.如权利要求1所述的半动态触发器,其特征在于,该开关为一传输门。2. The semi-dynamic flip-flop as claimed in claim 1, wherein the switch is a transmission gate.
CN201310144046.6A 2013-04-24 2013-04-24 semi-dynamic trigger Expired - Fee Related CN104124946B (en)

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US8122413B2 (en) * 2006-06-09 2012-02-21 Otrsotech, Limited Liability Company Transparent test method and scan flip-flop

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US7157930B2 (en) * 2003-12-22 2007-01-02 Matsushita Electric Industrial Co., Ltd. Scan flip flop, semiconductor device, and production method of semiconductor device

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Publication number Priority date Publication date Assignee Title
US5917355A (en) * 1997-01-16 1999-06-29 Sun Microsystems, Inc. Edge-triggered staticized dynamic flip-flop with conditional shut-off mechanism
CN1694356A (en) * 2004-04-29 2005-11-09 三星电子株式会社 MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop
US8122413B2 (en) * 2006-06-09 2012-02-21 Otrsotech, Limited Liability Company Transparent test method and scan flip-flop

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