CN101465631A - Delay circuit - Google Patents
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Abstract
Description
技术领域 technical field
本发明是有关于一种延迟电路,尤指一种不受电源电压变化影响而可提供高稳定延迟时间于数字信号处理的延迟电路。The present invention relates to a delay circuit, especially a delay circuit which can provide high stable delay time for digital signal processing without being affected by power supply voltage variation.
背景技术 Background technique
在许多电路中,例如时脉信号产生器(clockgenerator)或是射频传输接收器(RF transceiver),对于信号相位的精确度要求相当高,当这些信号相位产生偏差时,会对整个系统产生相当大的影响。至于在多相位时脉信号产生器(multi-phase clockgenerator)中,每个输出信号间的相位差的精确度亦相当重要,当相位误差增加时,输出时脉信号的时脉抖动(jitter)也会增加,这对需要精确的时脉信号的系统而言,可能会导致后级电路严重的错误,例如模拟至数字转换器的取样点错误,或是位错误率(biterror rate)上升。因此,在设计需高相位精确度的电路时,都会小心处理其布局路径,然而当供应电压发生飘移现象时,已知延迟电路技术通常无法提供准确的相位延迟,此时就需要利用额外的机制对相位偏移做修正。In many circuits, such as a clock generator (clock generator) or a radio frequency transmission receiver (RF transceiver), the accuracy of the signal phase is very high. When the signal phase deviates, it will have a considerable impact on the entire system. Impact. As for the multi-phase clock signal generator (multi-phase clock generator), the accuracy of the phase difference between each output signal is also very important. When the phase error increases, the clock jitter of the output clock signal also increases. will increase, which may lead to serious errors in subsequent circuits for systems that require precise clock signals, such as sampling point errors in analog-to-digital converters, or increased bit error rates. Therefore, when designing a circuit that requires high phase accuracy, the layout path will be carefully handled. However, when the supply voltage drifts, the known delay circuit technology usually cannot provide accurate phase delay. At this time, additional mechanisms need to be used. Correct for phase shift.
已知的延迟电路技术主要是利用电容的充放电效应来对欲传送至下一级的信号进行延迟处理,请参考图1,图1是显示一已知延迟电路100的电路示意图。延迟电路100包含一前级充放电电路105及一反相器190。前级充放电电路105包含一第一电流源110、一第二电流源112、一第一控制开关120、一第二控制开关122、及一电容130。反相器190包含一P通道金属氧化半场效应晶体管(PMOSFET)180及一N通道金属氧化半场效应晶体管(NMOSFET)182。延迟电路100耦合于一第一供应电压Vdd及一第二供应电压Vss之间,第一控制开关120及第二控制开关122是受控于一逻辑输入信号Sin。根据第一控制开关120及第二控制开关122的开关状态,第一电流源110及第二电流源112可对电容器130执行充电及放电操作,用以产生电压信号Vc。反相器190执行电容130的电压信号Vc的信号反相处理,以产生落后逻辑输入信号Sin一延迟时间的一逻辑输出信号Sout。The known delay circuit technology mainly uses the charging and discharging effect of the capacitor to delay the signal to be transmitted to the next stage. Please refer to FIG. 1 . FIG. 1 is a schematic circuit diagram showing a known
但当第一供应电压Vdd或第二供应电压Vss的供应电压漂移时,反相器190的输入至输出的转态电压随的改变,使电容130充放电的相对应于延迟时间的电压范围跟着改变,导至输入至输出的延迟时间也跟着改变,换句话说,当供应电压不稳定时,延迟时间也随的不稳定。However, when the supply voltage of the first supply voltage Vdd or the second supply voltage Vss drifts, the transition voltage from the input to the output of the
请参考图2,图2是显示另一已知延迟电路200的电路示意图。延迟电路200包含一前级充放电电路205及一比较电路290。前级充放电电路205用以根据逻辑输入信号Sin产生电压信号Vc,其与上述的前级充放电电路105的内部电路结构相同,所以不再赘述。比较电路290包含一第一分压电阻291、一第二分压电阻292、及一比较器295。第一分压电阻291及一第二分压电阻292耦合于第一供应电压Vdd与第二供应电压Vss之间,用以提供一比较参考电压Vr。比较器295执行电压信号Vc与比较参考电压Vr的信号比较处理,用以产生逻辑输出信号Sout。Please refer to FIG. 2 . FIG. 2 is a circuit schematic diagram showing another known
延迟电路200是将电压信号Vc上升及下降的转态电压均设为比较参考电压Vr,但仍受供应电压漂移的影响。此外,第一及第二分压电阻的额外功率消耗亦为此电路的缺点,若使用高分压电阻以降低额外功率消耗,则在电路布局设计中,需耗费相当的分压电阻元件面积,不利于电路密集度及生产成本。The
发明内容 Contents of the invention
本发明的目的在于,提供一种延迟电路,其可不受供应电压漂移的影响。此外,在电路布局设计中,不需耗费相当的分压电阻元件面积,有利于电路密集度及生产成本的降低。The object of the present invention is to provide a delay circuit which is not affected by supply voltage drift. In addition, in the circuit layout design, there is no need to consume a considerable area of the voltage dividing resistor element, which is beneficial to the reduction of circuit density and production cost.
依据本发明的实施例,其揭露一种延迟电路,包含一前级充放电电路、一信号处理电路、及一输出电路。前级充放电电路包含一输入端用以接收一逻辑输入信号,及一输出端用以输出一电压信号,前级充放电电路是用以根据逻辑输入信号执行充放电程序产生电压信号。信号处理电路耦合于前级充放电电路的输出端以接收电压信号,用以根据电压信号产生一第一延迟信号及一第二延迟信号,信号处理电路包含一第一电流源、一第一晶体管、一第二电流源、及一第二晶体管。第一电流源包含一第一端用以接收一第一供应电压,及一第二端。第一晶体管包含一第一端用以接收一第二供应电压,一第二端耦合于第一电流源的第二端,及一控制端耦合于前级充放电电路的输出端以接收电压信号,其中第一晶体管的第二端是用以输出第一延迟信号。第二电流源包含一第一端用以接收第二供应电压,及一第二端。第二晶体管包含一第一端用以接收第一供应电压,一第二端耦合于第二电流源的第二端,及一控制端耦合于前级充放电电路的输出端以接收电压信号,其中第二晶体管的第二端是用以输出第二延迟信号。输出电路包含一第一输入端耦合于第一晶体管的第二端,用以接收第一延迟信号,一第二输入端耦合于第二晶体管的第二端,用以接收第二延迟信号,一第三输入端用以接收逻辑输入信号,及一输出端用以输出一逻辑输出信号,输出电路根据第一延迟信号、第二延迟信号、及逻辑输入信号产生逻辑输出信号。According to an embodiment of the present invention, a delay circuit is disclosed, which includes a pre-stage charging and discharging circuit, a signal processing circuit, and an output circuit. The pre-stage charge-discharge circuit includes an input terminal for receiving a logic input signal and an output terminal for outputting a voltage signal. The pre-stage charge-discharge circuit is used to execute a charge-discharge procedure according to the logic input signal to generate a voltage signal. The signal processing circuit is coupled to the output terminal of the pre-stage charging and discharging circuit to receive the voltage signal, and is used to generate a first delay signal and a second delay signal according to the voltage signal. The signal processing circuit includes a first current source, a first transistor , a second current source, and a second transistor. The first current source includes a first terminal for receiving a first supply voltage, and a second terminal. The first transistor includes a first terminal for receiving a second supply voltage, a second terminal coupled to the second terminal of the first current source, and a control terminal coupled to the output terminal of the pre-stage charging and discharging circuit for receiving the voltage signal , wherein the second terminal of the first transistor is used to output the first delayed signal. The second current source includes a first terminal for receiving the second supply voltage, and a second terminal. The second transistor includes a first terminal for receiving the first supply voltage, a second terminal coupled to the second terminal of the second current source, and a control terminal coupled to the output terminal of the pre-stage charging and discharging circuit for receiving the voltage signal, Wherein the second terminal of the second transistor is used to output the second delayed signal. The output circuit includes a first input terminal coupled to the second terminal of the first transistor for receiving the first delayed signal, a second input terminal coupled to the second terminal of the second transistor for receiving the second delayed signal, and a The third input terminal is used to receive the logic input signal, and the output terminal is used to output a logic output signal. The output circuit generates the logic output signal according to the first delay signal, the second delay signal and the logic input signal.
依据本发明的实施例,其另揭露一种延迟电路,包含一前级充放电电路、一信号处理电路、及一输出电路。前级充放电电路包含一输入端用以接收一逻辑输入信号,及一输出端用以输出一电压信号,前级充放电电路是用以根据逻辑输入信号执行充放电程序产生电压信号。信号处理电路耦合于前级充放电电路的输出端以接收电压信号,用以根据电压信号产生一第一延迟信号及一第二延迟信号,信号处理电路包含一第一电流源、一第一晶体管、一第二电流源、及一第二晶体管。第一电流源包含一第一端用以接收一第一供应电压,及一第二端。第一晶体管包含一第一端用以接收一第二供应电压,一第二端耦合于第一电流源的第二端,及一控制端耦合于前级充放电电路的输出端以接收电压信号,其中第一晶体管的第二端是用以输出第一延迟信号。第二电流源包含一第一端用以接收第二供应电压,及一第二端。第二晶体管包含一第一端用以接收第一供应电压,一第二端耦合于第二电流源的第二端,及一控制端耦合于前级充放电电路的输出端以接收电压信号,其中第二晶体管的第二端是用以输出第二延迟信号。输出电路包含一第一输入端耦合于第一晶体管的第二端,用以接收第一延迟信号,一第二输入端耦合于第二晶体管的第二端,用以接收第二延迟信号,及一输出端用以输出一逻辑输出信号,输出电路根据第一延迟信号及第二延迟信号产生逻辑输出信号。According to an embodiment of the present invention, it further discloses a delay circuit, which includes a pre-stage charging and discharging circuit, a signal processing circuit, and an output circuit. The pre-stage charge-discharge circuit includes an input terminal for receiving a logic input signal and an output terminal for outputting a voltage signal. The pre-stage charge-discharge circuit is used to execute a charge-discharge procedure according to the logic input signal to generate a voltage signal. The signal processing circuit is coupled to the output terminal of the pre-stage charging and discharging circuit to receive the voltage signal, and is used to generate a first delay signal and a second delay signal according to the voltage signal. The signal processing circuit includes a first current source, a first transistor , a second current source, and a second transistor. The first current source includes a first terminal for receiving a first supply voltage, and a second terminal. The first transistor includes a first terminal for receiving a second supply voltage, a second terminal coupled to the second terminal of the first current source, and a control terminal coupled to the output terminal of the pre-stage charging and discharging circuit for receiving the voltage signal , wherein the second terminal of the first transistor is used to output the first delayed signal. The second current source includes a first terminal for receiving the second supply voltage, and a second terminal. The second transistor includes a first terminal for receiving the first supply voltage, a second terminal coupled to the second terminal of the second current source, and a control terminal coupled to the output terminal of the pre-stage charging and discharging circuit for receiving the voltage signal, Wherein the second terminal of the second transistor is used to output the second delayed signal. The output circuit includes a first input terminal coupled to the second terminal of the first transistor for receiving the first delayed signal, a second input terminal coupled to the second terminal of the second transistor for receiving the second delayed signal, and An output terminal is used to output a logic output signal, and the output circuit generates a logic output signal according to the first delay signal and the second delay signal.
附图说明 Description of drawings
为让本发明更显而易懂,下文依本发明的延迟电路,特举实施例配合附图作详细说明,但所提供的实施例并不用以限制本发明所涵盖的范围,其中:In order to make the present invention clearer and easier to understand, the delay circuit according to the present invention will be described in detail below with reference to specific embodiments in conjunction with the accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention, wherein:
图1显示一已知延迟电路的电路示意图。FIG. 1 shows a circuit diagram of a known delay circuit.
图2显示另一已知延迟电路的电路示意图。FIG. 2 shows a schematic circuit diagram of another known delay circuit.
图3显示依本发明第一实施例的延迟电路的电路示意图。FIG. 3 shows a schematic circuit diagram of a delay circuit according to a first embodiment of the present invention.
图4显示图3的延迟电路的工作相关信号的时序图。FIG. 4 shows a timing diagram of operation-related signals of the delay circuit of FIG. 3 .
图5显示依本发明第二实施例的延迟电路的电路示意图。FIG. 5 shows a schematic circuit diagram of a delay circuit according to a second embodiment of the present invention.
图6显示依本发明第三实施例的延迟电路的电路示意图。FIG. 6 shows a schematic circuit diagram of a delay circuit according to a third embodiment of the present invention.
图7显示依本发明第四实施例的延迟电路的电路示意图。FIG. 7 shows a schematic circuit diagram of a delay circuit according to a fourth embodiment of the present invention.
具体实施方式 Detailed ways
请参考图3,图3是显示依本发明第一实施例的延迟电路300的电路示意图。延迟电路300包含一前级充放电电路305、一信号处理电路350、及一输出电路380。信号处理电路350包含一第一电流源370、一第一晶体管360、一第二电流源372、及一第二晶体管362。前级充放电电路305包含一第三电流源310、一第一控制开关320、一第四电流源312、一第二控制开关322、及一电容330。输出电路380包含一第一或非门(NOR gate)381、一第二或非门383、一第三或非门385、及一第四或非门388。Please refer to FIG. 3 . FIG. 3 is a circuit diagram showing a delay circuit 300 according to a first embodiment of the present invention. The delay circuit 300 includes a pre-stage charging and discharging circuit 305 , a signal processing circuit 350 , and an output circuit 380 . The signal processing circuit 350 includes a first current source 370 , a first transistor 360 , a second current source 372 , and a second transistor 362 . The pre-stage charging and discharging circuit 305 includes a third current source 310 , a first control switch 320 , a fourth current source 312 , a second control switch 322 , and a capacitor 330 . The output circuit 380 includes a first NOR gate 381 , a second NOR gate 383 , a third NOR gate 385 , and a fourth NOR gate 388 .
第三电流源310包含一第一端及一第二端,其中第一端用以接收一第一供应电压Vdd,第二端用以供应一电流I3。第一控制开关320包含一第一端、一第二端、及一控制端,其中第一端耦合于第三电流源310的第二端,用以接收电流I3,控制端用以接收一逻辑输入信号Sin,第二端用以输出电流I3,第一控制开关320是用以根据逻辑输入信号Sin控制其第一端及第二端的耦合状态。第四电流源312包含一第一端及一第二端,其中第一端用以接收一第二供应电压Vss,第二端用以供应一电流I4,第二供应电压Vss可以是一接地电压。第二控制开关322包含一第一端、一第二端、及一控制端,其中第一端耦合于第四电流源312的第二端,用以接收电流I4,控制端用以接收逻辑输入信号Sin,第二端用以输出电流I4,第二控制开关322是用以根据逻辑输入信号Sin控制其第一端及第二端的耦合状态。第一控制开关320及第二控制开关322可以是电子式继电器(Electronic Relay)、金属氧化半场效应晶体管(MOSTransistor)、或双载子晶体管(Bipolar Transistor)。The third current source 310 includes a first terminal and a second terminal, wherein the first terminal is used for receiving a first supply voltage Vdd, and the second terminal is used for supplying a current I3. The first control switch 320 includes a first terminal, a second terminal, and a control terminal, wherein the first terminal is coupled to the second terminal of the third current source 310 to receive the current I3, and the control terminal is used to receive a logic The input signal Sin, the second terminal is used to output the current I3, and the first control switch 320 is used to control the coupling state of the first terminal and the second terminal according to the logic input signal Sin. The fourth current source 312 includes a first terminal and a second terminal, wherein the first terminal is used to receive a second supply voltage Vss, and the second terminal is used to supply a current I4, and the second supply voltage Vss can be a ground voltage . The second control switch 322 includes a first terminal, a second terminal, and a control terminal, wherein the first terminal is coupled to the second terminal of the fourth current source 312 to receive the current I4, and the control terminal is used to receive the logic input The second end of the signal Sin is used to output the current I4, and the second control switch 322 is used to control the coupling state of the first end and the second end of the signal Sin according to the logic input signal Sin. The first control switch 320 and the second control switch 322 can be electronic relays (Electronic Relay), metal oxide field effect transistors (MOS Transistor), or bipolar transistors (Bipolar Transistor).
电容330包含一第一端及一第二端,其中第一端耦合于第一控制开关320的第二端,用以输出一电压信号Vc,第二端用以接收第二供应电压Vss。当逻辑输入信号Sin为低准位电压时,第一控制开关320导通且第二控制开关322截止,所以电容330可藉由第三电流源310所提供的电流I3执行充电程序,使电压信号Vc上升至第一供应电压Vdd。当逻辑输入信号Sin为高准位电压时,第一控制开关320截止且第二控制开关322导通,所以电容330可藉由第四电流源312所提供的电流I4执行放电程序,使电压信号Vc下降至第二供应电压Vss。The capacitor 330 includes a first terminal and a second terminal, wherein the first terminal is coupled to the second terminal of the first control switch 320 for outputting a voltage signal Vc, and the second terminal is used for receiving the second supply voltage Vss. When the logic input signal Sin is a low level voltage, the first control switch 320 is turned on and the second control switch 322 is turned off, so the capacitor 330 can be charged by the current I3 provided by the third current source 310 to make the voltage signal Vc rises to the first supply voltage Vdd. When the logic input signal Sin is a high-level voltage, the first control switch 320 is turned off and the second control switch 322 is turned on, so the capacitor 330 can perform a discharge process through the current I4 provided by the fourth current source 312, so that the voltage signal Vc drops to the second supply voltage Vss.
第一电流源370包含一第一端及一第二端,其中第一端用以接收第一供应电压Vdd,第二端用以供应一电流I1。第一晶体管360包含一第一端、一第二端、及一控制端,其中第一端用以接收第二供应电压Vss,第二端耦合于第一电流源370的第二端,控制端耦合于电容330的第一端,用以接收电压信号Vc,第一晶体管360的第二端是用以输出一第一延迟信号Sd1,第一晶体管360是为一N通道金属氧化半场效应晶体管(NMOS Field Effect Transistor)或一N通道接面场效晶体管(N-channel Junction FieldEffect Transistor)。The first current source 370 includes a first terminal and a second terminal, wherein the first terminal is used for receiving the first supply voltage Vdd, and the second terminal is used for supplying a current I1. The first transistor 360 includes a first terminal, a second terminal, and a control terminal, wherein the first terminal is used to receive the second supply voltage Vss, the second terminal is coupled to the second terminal of the first current source 370, and the control terminal Coupled to the first end of the capacitor 330 for receiving the voltage signal Vc, the second end of the first transistor 360 is used for outputting a first delay signal Sd1, the first transistor 360 is an N-channel Metal Oxide Half Field Effect Transistor (NMOS Field Effect Transistor) or an N-channel Junction Field Effect Transistor (N-channel Junction Field Effect Transistor).
第二电流源372包含一第一端及一第二端,其中第一端用以接收第二供应电压Vss,第二端用以供应一电流I2。第二晶体管362包含一第一端、一第二端、及一控制端,其中第一端用以接收第一供应电压Vdd,第二端耦合于第二电流源372的第二端,控制端耦合于电容330的第一端,用以接收电压信号Vc,第二晶体管362的第二端是用以输出一第二延迟信号Sd2,第二晶体管362是为一P通道金属氧化半场效应晶体管(PMOS Field Effect Transistor)或一P通道接面场效晶体管(P-channel Junction FieldEffect Transistor)。The second current source 372 includes a first terminal and a second terminal, wherein the first terminal is used for receiving the second supply voltage Vss, and the second terminal is used for supplying a current I2. The second transistor 362 includes a first terminal, a second terminal, and a control terminal, wherein the first terminal is used to receive the first supply voltage Vdd, the second terminal is coupled to the second terminal of the second current source 372, and the control terminal Coupled to the first terminal of the capacitor 330 for receiving the voltage signal Vc, the second terminal of the second transistor 362 is used for outputting a second delay signal Sd2, and the second transistor 362 is a P-channel Metal Oxide Half Field Effect Transistor (PMOS Field Effect Transistor) or a P-channel Junction Field Effect Transistor (P-channel Junction Field Effect Transistor).
第一或非门381包含一第一输入端、一第二输入端、及一输出端,其中第一输入端用以接收逻辑输入信号Sin,第二输入端耦合于第二晶体管362的第二端,用以接收第二延迟信号Sd2,输出端用以输出执行逻辑输入信号Sin与第二延迟信号Sd2的逻辑反或处理所产生的一第一信号。第二或非门383包含一第一输入端、一第二输入端、及一输出端,其中第一输入端耦合于第二晶体管362的第二端,用以接收第二延迟信号Sd2,第二输入端耦合于第一晶体管360的第二端,用以接收第一延迟信号Sd1,输出端用以输出执行第一延迟信号Sd1与第二延迟信号Sd2的逻辑反或处理所产生的一第二信号。第三或非门385包含一第一输入端、一第二输入端、及一输出端,其中第一输入端用以接收逻辑输入信号Sin,第二输入端耦合于第一晶体管360的第二端,用以接收第一延迟信号Sd1,输出端用以输出执行逻辑输入信号Sin与第一延迟信号Sd1的逻辑反或处理所产生的一第三信号。The first NOR gate 381 includes a first input end, a second input end, and an output end, wherein the first input end is used to receive the logic input signal Sin, and the second input end is coupled to the second end of the second transistor 362. The terminal is used for receiving the second delayed signal Sd2, and the output terminal is used for outputting a first signal generated by performing logical inverse OR processing of the logical input signal Sin and the second delayed signal Sd2. The second NOR gate 383 includes a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal is coupled to the second terminal of the second transistor 362 for receiving the second delay signal Sd2, the second The two input ends are coupled to the second end of the first transistor 360 for receiving the first delay signal Sd1, and the output end is used for outputting a first delay signal Sd1 and the second delay signal Sd2 which are generated by logical inverse OR processing. Two signals. The third NOR gate 385 includes a first input end, a second input end, and an output end, wherein the first input end is used to receive the logic input signal Sin, and the second input end is coupled to the second end of the first transistor 360. The terminal is used for receiving the first delayed signal Sd1, and the output terminal is used for outputting a third signal generated by performing logical inverse OR processing of the logic input signal Sin and the first delayed signal Sd1.
第四或非门388包含一第一输入端、一第二输入端、一第三输入端、及一输出端,其中第一输入端耦合于第一或非门381的输出端,用以接收第一信号,第二输入端耦合于第二或非门383的输出端,用以接收第二信号,第三输入端耦合于第三或非门385的输出端,用以接收第三信号,输出端用以输出执行第一信号、第二信号、及第三信号的逻辑反或处理所产生的一逻辑输出信号Sout。The fourth NOR gate 388 includes a first input terminal, a second input terminal, a third input terminal, and an output terminal, wherein the first input terminal is coupled to the output terminal of the first NOR gate 381 for receiving The first signal, the second input terminal is coupled to the output terminal of the second NOR gate 383 for receiving the second signal, the third input terminal is coupled to the output terminal of the third NOR gate 385 for receiving the third signal, The output terminal is used for outputting a logic output signal Sout generated by performing logical inverse OR processing of the first signal, the second signal, and the third signal.
请参考图4,图4是显示图3的延迟电路300的工作相关信号的时序图,横轴为时间轴。图4所示的工作相关信号,由上而下依序为逻辑输入信号Sin、电压信号Vc、第一延迟信号Sd1、第二延迟信号Sd2、及逻辑输出信号Sout。逻辑输入信号Sin在时间T1从低准位电压转为高准位电压,第一控制开关320由导通转为截止,第二控制开关322由截止转为导通,电容330藉由第四电流源312所提供的电流I4执行放电程序,使电压信号Vc的电压从第一供应电压Vdd递减。在时间T2时,电压信号Vc的电压递减至等于一第二转态电压Vt2,而第二晶体管362的控制端与第一端之间的一电压差,等于相对应于第二晶体管362的一第二临界电压Vth2,使第二晶体管362由截止转为导通,所以第二延迟信号Sd2就从低准位电压转为高准位电压。在时间T3时,电压信号Vc的电压递减至等于一第一转态电压Vt1,而第一晶体管361的控制端与第一端之间的一电压差,等于相对应于第一晶体管361的一第一临界电压Vth1,使第一晶体管361由导通转为截止,所以第一延迟信号Sd1就从低准位电压转为高准位电压。Please refer to FIG. 4 . FIG. 4 is a timing diagram showing operation-related signals of the delay circuit 300 in FIG. 3 , and the horizontal axis is the time axis. The work-related signals shown in FIG. 4 are, from top to bottom, the logic input signal Sin, the voltage signal Vc, the first delay signal Sd1, the second delay signal Sd2, and the logic output signal Sout. The logic input signal Sin changes from a low-level voltage to a high-level voltage at time T1, the first control switch 320 turns from on to off, the second control switch 322 turns from off to on, and the capacitor 330 passes the fourth current The current I4 provided by the source 312 executes a discharge procedure, so that the voltage of the voltage signal Vc decreases gradually from the first supply voltage Vdd. At time T2, the voltage of the voltage signal Vc decreases to be equal to a second transition voltage Vt2, and a voltage difference between the control terminal and the first terminal of the second transistor 362 is equal to a voltage corresponding to the second transistor 362. The second threshold voltage Vth2 turns the second transistor 362 from off to on, so the second delay signal Sd2 turns from a low level voltage to a high level voltage. At time T3, the voltage of the voltage signal Vc decreases to be equal to a first transition voltage Vt1, and a voltage difference between the control terminal and the first terminal of the first transistor 361 is equal to a voltage corresponding to the first transistor 361. The first threshold voltage Vth1 turns the first transistor 361 from on to off, so the first delay signal Sd1 turns from a low level voltage to a high level voltage.
逻辑输入信号Sin在时间T4从高准位电压转为低准位电压,第一控制开关320由截止转为导通,第二控制开关322由导通转为截止,电容330藉由第三电流源310所提供的电流I3执行充电程序,使电压信号Vc的电压从第二供应电压Vss递增。在时间T5时,电压信号Vc的电压递增至等于第一转态电压Vt1,而第一晶体管361的控制端与第一端之间的电压差等于第一临界电压Vth1,使第一晶体管361由截止转为导通,所以第一延迟信号Sd1就从高准位电压转为低准位电压。在时间T6时,电压信号Vc的电压递增至等于第二转态电压Vt2,而第二晶体管362的控制端与第一端的电压差等于第二临界电压Vth2,使第二晶体管362由导通转为截止,所以第二延迟信号Sd2就从高准位电压转为低准位电压。The logic input signal Sin changes from a high-level voltage to a low-level voltage at time T4, the first control switch 320 turns from off to on, the second control switch 322 turns from on to off, and the capacitor 330 passes the third current The current I3 provided by the source 310 executes the charging process, so that the voltage of the voltage signal Vc increases from the second supply voltage Vss. At time T5, the voltage of the voltage signal Vc is increased to be equal to the first transition voltage Vt1, and the voltage difference between the control terminal and the first terminal of the first transistor 361 is equal to the first threshold voltage Vth1, so that the first transistor 361 is controlled by Turning off turns on, so the first delay signal Sd1 turns from a high level voltage to a low level voltage. At time T6, the voltage of the voltage signal Vc is increased to be equal to the second transition voltage Vt2, and the voltage difference between the control terminal and the first terminal of the second transistor 362 is equal to the second threshold voltage Vth2, so that the second transistor 362 is turned on. turns off, so the second delay signal Sd2 turns from the high level voltage to the low level voltage.
第一延迟信号Sd1、第二延迟信号Sd2、及逻辑输入信号Sin经输出电路380的逻辑信号处理,而产生如第4图所示的逻辑输出信号Sout。逻辑输出信号Sout的脉波前缘以一升缘延迟时间(rising edgedelay time)DT1落后逻辑输入信号Sin的脉波前缘,逻辑输出信号Sout的脉波后缘以一降缘延迟时间(falling edge delay time)DT2落后逻辑输入信号Sin的脉波后缘。升缘延迟时间DT1及降缘延迟时间DT2可根据下列公式(1)及(2)计算产生。The first delay signal Sd1 , the second delay signal Sd2 , and the logic input signal Sin are processed by the logic signal of the output circuit 380 to generate the logic output signal Sout as shown in FIG. 4 . The leading edge of the pulse wave of the logic output signal Sout lags behind the leading edge of the pulse wave of the logic input signal Sin by a rising edge delay time DT1, and the trailing edge of the pulse wave of the logic output signal Sout lags behind the pulse wave leading edge of the logic output signal Sout by a falling edge delay time (falling edge delay time) DT2 lags behind the pulse trailing edge of the logic input signal Sin. The rising edge delay time DT1 and the falling edge delay time DT2 can be calculated according to the following formulas (1) and (2).
其中,参数C为电容330的电容值,参数Ic3为电流I3的电流值,参数Ic4为电流I4的电流值。根据上列公式(1)及(2)可知,升缘延迟时间DT1是由电流值Ic4、第二临界电压Vth2、及电容值C所决定,而降缘延迟时间DT2是由电流值Ic3、第一临界电压Vth1、及电容值C所决定,因此,公式(1)及(2)的所有参数均不受第一供应电压Vdd及第二供应电压Vss影响,换句话说,当第一供应电压Vdd或第二供应电压Vss有电压漂移现象发生时,升缘延迟时间DT1及降缘延迟时间DT2均不受影响,延迟电路300仍可根据逻辑输入信号Sin产生稳定的逻辑输出信号Sout。Wherein, the parameter C is the capacitance value of the capacitor 330 , the parameter Ic3 is the current value of the current I3 , and the parameter Ic4 is the current value of the current I4 . According to the above formulas (1) and (2), it can be seen that the rising edge delay time DT1 is determined by the current value Ic4, the second threshold voltage Vth2, and the capacitance value C, while the falling edge delay time DT2 is determined by the current value Ic3, the second threshold voltage Vth2, and the capacitance value C. A threshold voltage Vth1 and a capacitance value C are determined. Therefore, all parameters of formulas (1) and (2) are not affected by the first supply voltage Vdd and the second supply voltage Vss. In other words, when the first supply voltage When the voltage drift of Vdd or the second supply voltage Vss occurs, neither the rising-edge delay time DT1 nor the falling-edge delay time DT2 is affected, and the delay circuit 300 can still generate a stable logic output signal Sout according to the logic input signal Sin.
请参考图5,图5是显示依本发明第二实施例的延迟电路500的电路示意图。延迟电路500包含一前级充放电电路505、一信号处理电路550、及一输出电路580。信号处理电路550包含一第一电流源570、一第一晶体管560、一第二电流源572、及一第二晶体管562。前级充放电电路505包含一第三电流源510、一第一控制开关520、一第四电流源512、一第二控制开关522、及一电容530。输出电路580包含一第一或门(ORgate)581、一第二或门583、一第三或门585、及一与门(AND gate)588。Please refer to FIG. 5 . FIG. 5 is a circuit diagram showing a
前级充放电电路505的内部电路结构与前级充放电电路305相同,所以不再赘述其相关元件的电路连接。第一电流源570包含一第一端及一第二端,其中第一端用以接收第一供应电压Vdd,第二端用以供应一电流I1。第一晶体管560包含一第一端、一第二端、及一控制端,其中第一端用以接收第二供应电压Vss,第二端耦合于第一电流源570的第二端,控制端耦合于电容530,用以接收一电压信号Vc,第一晶体管560的第二端是用以输出一第一延迟信号Sd1,第一晶体管560是为一NPN双载子晶体管(NPNbipolar transistor)。The internal circuit structure of the pre-stage charge-
第二电流源572包含一第一端及一第二端,其中第一端用以接收第二供应电压Vss,第二端用以供应一电流I2。第二晶体管562包含一第一端、一第二端、及一控制端,其中第一端用以接收第一供应电压Vdd,第二端耦合于第二电流源572的第二端,控制端耦合于电容530,用以接收电压信号Vc,第二晶体管562的第二端是用以输出一第二延迟信号Sd2,第二晶体管562是为一PNP双载子晶体管(PNPbipolar transistor)。The second
第一或门581包含一第一输入端、一第二输入端、及一输出端,其中第一输入端用以接收一逻辑输入信号Sin,第二输入端耦合于第二晶体管562的第二端,用以接收第二延迟信号Sd2,输出端用以输出执行逻辑输入信号Sin与第二延迟信号Sd2的逻辑或处理所产生的一第一信号。第二或门583包含一第一输入端、一第二输入端、及一输出端,其中第一输入端耦合于第二晶体管562的第二端,用以接收第二延迟信号Sd2,第二输入端耦合于第一晶体管560的第二端,用以接收第一延迟信号Sd1,输出端用以输出执行第一延迟信号Sd1与第二延迟信号Sd2的逻辑或处理所产生的一第二信号。第三或门585包含一第一输入端、一第二输入端、及一输出端,其中第一输入端用以接收逻辑输入信号Sin,第二输入端耦合于第一晶体管560的第二端,用以接收第一延迟信号Sd1,输出端用以输出执行逻辑输入信号Sin与第一延迟信号Sd1的逻辑或处理所产生的一第三信号。The first OR
与门588包含一第一输入端、一第二输入端、一第三输入端、及一输出端,其中第一输入端耦合于第一或门581的输出端,用以接收第一信号,第二输入端耦合于第二或门583的输出端,用以接收第二信号,第三输入端耦合于第三或门585的输出端,用以接收第三信号,输出端用以输出执行第一信号、第二信号、及第三信号的逻辑及处理所产生的一逻辑输出信号Sout。The AND
相对应于延迟电路500的逻辑输入信号Sin、电压信号Vc、第一延迟信号Sd1、第二延迟信号Sd2、及逻辑输出信号Sout的工作时序图,是同于第4图所示的延迟电路300的相关信号的工作时序图,所以不再赘述其工作原理。The timing diagram corresponding to the operation of the logic input signal Sin, the voltage signal Vc, the first delay signal Sd1, the second delay signal Sd2, and the logic output signal Sout of the
请参考图6,图6是显示依本发明第三实施例的延迟电路600的电路示意图。延迟电路600包含一前级充放电电路605、一信号处理电路650、及一输出电路680。信号处理电路650包含一第一电流源670、一第一晶体管660、一第二电流源672、及一第二晶体管662。前级充放电电路605包含一第三电流源610、一第一控制开关620、一第四电流源612、一第二控制开关622、及一电容630。输出电路680包含一反相器(inverter)681、一第一与非门(NAND gate)683、一第二与非门685、一与门687、及一或门689。Please refer to FIG. 6 . FIG. 6 is a circuit diagram showing a
前级充放电电路605及信号处理电路650的内部电路结构,同于前级充放电电路305及信号处理电路350的内部电路结构,所以不再赘述其相关元件的电路连接。反相器681包含一输入端及一输出端,其中输入端耦合于第一晶体管660,用以接收一第一延迟信号Sd1,输出端用以输出执行第一延迟信号Sd1的逻辑反相处理所产生的一第一信号。第一与非门683包含一第一输入端、一第二输入端、及一输出端,其中第一输入端耦合于反相器681的输出端,用以接收第一信号。第二与非门685包含一第一输入端、一第二输入端、及一输出端,其中第一输入端耦合于第二晶体管662,用以接收一第二延迟信号Sd2,第二输入端耦合于第一与非门683的输出端,输出端耦合于第一与非门683的第二输入端。第一与非门683与第二与非门685组合为一RS正反器(RS Flip-Flop),用以根据第二延迟信号Sd2及第一信号产生一第二信号,并从第二与非门685的输出端输出第二信号。与门687包含一第一输入端、一第二输入端、及一输出端,其中第一输入端耦合于第二晶体管662,用以接收第二延迟信号Sd2,第二输入端耦合于第二与非门685的输出端,用以接收第二信号,输出端用以输出执行第二延迟信号Sd2与第二信号的逻辑及处理所产生的一第三信号。或门689包含一第一输入端、一第二输入端、及一输出端,其中第一输入端耦合于与门687的输出端,用以接收第三信号,第二输入端耦合于第一晶体管660,用以接收第一延迟信号Sd1,输出端用以输出执行第一延迟信号Sd1与第三信号的逻辑或处理所产生的一逻辑输出信号Sout。The internal circuit structure of the pre-stage charging and discharging
请注意,输出电路680只根据第一延迟信号Sd1及第二延迟信号Sd2以产生逻辑输出信号Sout,并不需输入逻辑输入信号Sin至输出电路680。相对应于延迟电路600的逻辑输入信号Sin、电压信号Vc、第一延迟信号Sd1、第二延迟信号Sd2、及逻辑输出信号Sout的工作时序图,仍同于图4所示的延迟电路300的相关信号的工作时序图,所以不再赘述其工作原理。Please note that the
请参考图7,图7是显示依本发明第四实施例的延迟电路700的电路示意图。延迟电路700包含一前级充放电电路705、一信号处理电路750、及一输出电路780。信号处理电路750包含一第一电流源770、一第一晶体管760、一第二电流源772、及一第二晶体管762。前级充放电电路705包含一第三电流源710、一第一控制开关720、一第四电流源712、一第二控制开关722、及一电容730。输出电路780包含一反相器781、一第一与非门783、一第二与非门785、一与门787、一或门789、及复数个缓冲器(buffer)791-794。Please refer to FIG. 7 . FIG. 7 is a circuit diagram showing a
前级充放电电路705及信号处理电路750的内部电路结构,同于前级充放电电路505及信号处理电路550的内部电路结构,所以不再赘述其相关元件的电路连接。缓冲器791耦合于第二晶体管762与与门787的一输入端之间,缓冲器792-794耦合于第一晶体管760与或门789的一输入端之间,输出电路780的其余内部电路结构是同于输出电路680,所以不再赘述。相对应于延迟电路700的逻辑输入信号Sin、电压信号Vc、第一延迟信号Sd1、第二延迟信号Sd2、及逻辑输出信号Sout的工作时序图,仍同于图4所示的延迟电路300的相关信号的工作时序图,所以不再赘述其工作原理。The internal circuit structures of the pre-stage charge-
由上述可知,依本发明的延迟电路是根据晶体管的临界电压、电容元件的电容值、及电流源的电流值以决定信号延迟时间,即信号延迟时间不受供应电压漂移所影响,所以当供应电压不稳定时,依本发明的延迟电路仍可根据逻辑输入信号产生稳定的逻辑输出信号,使逻辑输出信号不会因供应电压不稳定而导至时脉抖动现象。From the above, it can be known that the delay circuit according to the present invention determines the signal delay time according to the critical voltage of the transistor, the capacitance value of the capacitive element, and the current value of the current source, that is, the signal delay time is not affected by the drift of the supply voltage, so when the supply voltage When the voltage is unstable, the delay circuit according to the present invention can still generate a stable logic output signal according to the logic input signal, so that the logic output signal will not cause clock jitter due to the unstable supply voltage.
以上所述仅为本发明的较佳实施例,凡依本发明的权利要求范围所做的均等变化与修饰,皆应属本发明的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the claims of the present invention shall fall within the scope of the present invention.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832912A (en) * | 2012-08-03 | 2012-12-19 | 沃谱瑞科技(北京)有限责任公司 | Pulse signal unilateral edge time delay circuit |
CN103368536A (en) * | 2013-07-24 | 2013-10-23 | 苏州加古尔微电子科技有限公司 | Signal delay circuit based on MOS (metal oxide semiconductor) transistors |
CN117544140A (en) * | 2024-01-09 | 2024-02-09 | 杭州米芯微电子有限公司 | Delay circuit and chip stable along with power supply voltage change |
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2007
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832912A (en) * | 2012-08-03 | 2012-12-19 | 沃谱瑞科技(北京)有限责任公司 | Pulse signal unilateral edge time delay circuit |
CN102832912B (en) * | 2012-08-03 | 2015-03-25 | 无锡中科沃谱瑞科技有限责任公司 | Pulse signal unilateral edge time delay circuit |
CN103368536A (en) * | 2013-07-24 | 2013-10-23 | 苏州加古尔微电子科技有限公司 | Signal delay circuit based on MOS (metal oxide semiconductor) transistors |
CN103368536B (en) * | 2013-07-24 | 2016-01-13 | 苏州加古尔微电子科技有限公司 | Based on the signal delay circuit of metal-oxide-semiconductor |
CN117544140A (en) * | 2024-01-09 | 2024-02-09 | 杭州米芯微电子有限公司 | Delay circuit and chip stable along with power supply voltage change |
CN117544140B (en) * | 2024-01-09 | 2024-04-12 | 杭州米芯微电子有限公司 | Along with the change of power supply voltage Stable time delay circuit and chip |
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