[go: up one dir, main page]

CN104124285B - Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation - Google Patents

Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation Download PDF

Info

Publication number
CN104124285B
CN104124285B CN201410340530.0A CN201410340530A CN104124285B CN 104124285 B CN104124285 B CN 104124285B CN 201410340530 A CN201410340530 A CN 201410340530A CN 104124285 B CN104124285 B CN 104124285B
Authority
CN
China
Prior art keywords
ceramic substrate
layer
hole
ceramic
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410340530.0A
Other languages
Chinese (zh)
Other versions
CN104124285A (en
Inventor
宿志成
陈土泉
宋旭宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Telecommunication Devices Co Ltd
Original Assignee
Wuhan Telecommunication Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Telecommunication Devices Co Ltd filed Critical Wuhan Telecommunication Devices Co Ltd
Priority to CN201410340530.0A priority Critical patent/CN104124285B/en
Publication of CN104124285A publication Critical patent/CN104124285A/en
Priority to JP2017510718A priority patent/JP6370473B2/en
Priority to US15/316,985 priority patent/US10312383B2/en
Priority to EP14897521.2A priority patent/EP3125299B1/en
Priority to PCT/CN2014/094320 priority patent/WO2016008264A1/en
Application granted granted Critical
Publication of CN104124285B publication Critical patent/CN104124285B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • H10F77/933Interconnections for devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/95Circuit arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

本发明适用于光电探测器技术领域,提供一种采用多层陶瓷罐式封装的高频光电探测器封装底座,包括贴合的多层陶瓷基板,所述多层陶瓷基板底部焊接有管脚,顶部设有金属环,各层陶瓷基板的上下表面均镀有导电金属层,各层陶瓷基板上均分布有电路连接孔,所述多层陶瓷基板的上表面设有两个电源触点、两个差分信号触点,所述电源触点、差分信号触点穿过各层陶瓷基板连接到对应的管脚。本发明提供的光电探测器封装底座为多层陶瓷结构的TO座,各层陶瓷基板上下表面电镀金属导电层,构成共面波导结构,而且高速信号线采用差分信号传输设计,可以解决20GHz以上带宽信号的传输问题,传输损耗小。

The present invention is applicable to the technical field of photodetectors, and provides a high-frequency photodetector packaging base adopting a multilayer ceramic pot package, including a laminated multilayer ceramic substrate, and pins are welded at the bottom of the multilayer ceramic substrate. There is a metal ring on the top, the upper and lower surfaces of each layer of ceramic substrates are plated with conductive metal layers, and circuit connection holes are distributed on each layer of ceramic substrates. The upper surface of the multilayer ceramic substrate is provided with two power contacts, two There are two differential signal contacts, and the power contacts and differential signal contacts are connected to corresponding pins through each layer of ceramic substrates. The photodetector packaging base provided by the present invention is a multi-layer ceramic structure TO base, and the upper and lower surfaces of each ceramic substrate are electroplated with a metal conductive layer to form a coplanar waveguide structure, and the high-speed signal line adopts a differential signal transmission design, which can solve the bandwidth above 20GHz Signal transmission problem, transmission loss is small.

Description

采用多层陶瓷罐式封装的高频光电探测器封装底座High Frequency Photodetector Package Base in Multilayer Ceramic Can Package

技术领域technical field

本发明属于光电探测器技术领域,尤其涉及一种采用多层陶瓷罐式封装的高频光电探测器封装底座。The invention belongs to the technical field of photoelectric detectors, and in particular relates to a high-frequency photoelectric detector packaging base adopting multilayer ceramic pot packaging.

背景技术Background technique

随着光通信的高速发展,100G光收发模块在未来几年需求量逐步上升。对于光收发模块中的核心器件之一的探测器组件,同样具备着巨大的市场需求。考虑的成本及体积问题,带宽大于20GHz,传输速率达到28Gbps的TO(罐型)型封装器件,也急需开发。传统罐型座,采用可伐作为主体,通过玻璃焊的工艺将管柱装配在主体上,作为电连接接口。这种传统的罐型座做了一定的阻抗匹配设计,在传输20G以下信号的表现很好,但在20G以上的应用时,其损耗很大,所以很难达到应用需求。With the rapid development of optical communication, the demand for 100G optical transceiver modules will gradually increase in the next few years. There is also a huge market demand for detector components, one of the core devices in optical transceiver modules. Considering the cost and volume issues, TO (can type) package devices with a bandwidth greater than 20GHz and a transmission rate of 28Gbps are also in urgent need of development. The traditional tank-shaped seat uses Kovar as the main body, and the pipe column is assembled on the main body through the glass welding process as the electrical connection interface. This traditional tank-type socket has a certain impedance matching design, and it performs well in transmitting signals below 20G, but in applications above 20G, its loss is very large, so it is difficult to meet the application requirements.

发明内容Contents of the invention

鉴于上述问题,本发明的目的在于提供一种采用多层陶瓷罐式封装的高频光电探测器封装底座,旨在解决传统罐型座难以传输20GHz以上信号的技术问题。In view of the above problems, the purpose of the present invention is to provide a high-frequency photodetector packaging base using a multilayer ceramic pot package, aiming to solve the technical problem that the traditional pot base is difficult to transmit signals above 20 GHz.

本发明采用如下技术方案:The present invention adopts following technical scheme:

一种采用多层陶瓷罐式封装的高频光电探测器封装底座,包括贴合的多层陶瓷基板,所述多层陶瓷基板底部焊接有管脚,顶部设有金属环,各层陶瓷基板的上下表面均镀有导电金属层,各层陶瓷基板上均分布有电路连接孔,并且通过所述电路连接孔各层陶瓷基板组合固定为一体,所述多层陶瓷基板的上表面设有两个电源触点、两个差分信号触点,所述电源触点、差分信号触点穿过各层陶瓷基板连接到对应的管脚,并且从多层陶瓷基板的下表面引出地管脚。A high-frequency photodetector packaging base adopting a multilayer ceramic pot package, including a bonded multilayer ceramic substrate, the bottom of the multilayer ceramic substrate is welded with pins, and the top is provided with a metal ring. The upper and lower surfaces are plated with conductive metal layers, and circuit connection holes are distributed on each layer of ceramic substrates, and the ceramic substrates of each layer are combined and fixed as one through the circuit connection holes. The upper surface of the multilayer ceramic substrate is provided with two A power contact and two differential signal contacts are connected to corresponding pins through each layer of ceramic substrate, and a ground pin is drawn out from the lower surface of the multilayer ceramic substrate.

本发明的有益效果是:本发明提供的光电探测器封装底座为多层陶瓷结构的罐型座,各层陶瓷基板上下表面电镀金属导电层,构成共面波导结构,而且高速信号线采用差分信号传输设计,可以解决20GHz以上带宽信号的传输问题,传输损耗小,可以满足单通道20G及以上同轴型光电探测器件的要求。The beneficial effects of the present invention are: the photodetector packaging base provided by the present invention is a pot-shaped seat with a multilayer ceramic structure, the upper and lower surfaces of each layer of ceramic substrate are plated with metal conductive layers to form a coplanar waveguide structure, and the high-speed signal line adopts a differential signal The transmission design can solve the transmission problem of signals with a bandwidth above 20GHz, and the transmission loss is small, which can meet the requirements of single-channel 20G and above coaxial photodetection devices.

附图说明Description of drawings

图1是本发明实施例提供的采用多层陶瓷罐式封装的高频光电探测器封装底座的立体图;Fig. 1 is a perspective view of a high-frequency photodetector packaging base provided by a multilayer ceramic pot package provided by an embodiment of the present invention;

图2是是本发明实施例提供的采用多层陶瓷罐式封装的高频光电探测器封装底座的俯视图;Fig. 2 is a top view of a high-frequency photodetector package base provided by a multilayer ceramic pot package provided by an embodiment of the present invention;

图3是本发明实施例提供的采用多层陶瓷罐式封装的高频光电探测器封装底座的轴向剖视图Fig. 3 is an axial cross-sectional view of the high-frequency photodetector package base provided by the embodiment of the present invention using a multilayer ceramic pot package

图4a、4b分别是第一陶瓷基板的上、下表面结构图;Figures 4a and 4b are structural views of the upper and lower surfaces of the first ceramic substrate, respectively;

图5a、5b分别是第二陶瓷基板的上、下表面结构图;Figures 5a and 5b are structural views of the upper and lower surfaces of the second ceramic substrate, respectively;

图6a、6b分别是第三陶瓷基板的上、下表面结构图;Figures 6a and 6b are structural views of the upper and lower surfaces of the third ceramic substrate, respectively;

图7a、7b分别是第四陶瓷基板的上、下表面结构图。7a and 7b are structural diagrams of the upper and lower surfaces of the fourth ceramic substrate, respectively.

具体实施方式detailed description

为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

为了说明本发明所述的技术方案,下面通过具体实施例来进行说明。In order to illustrate the technical solutions of the present invention, specific examples are used below to illustrate.

图1-图3分别示出了本发明实施例提供的采用多层陶瓷罐式封装的高频光电探测器封装底座的立体结构、俯视结构和轴向剖视结构,为了便于说明仅示出了与本发明实施例相关的部分。Figures 1-3 respectively show the three-dimensional structure, top view structure and axial cross-sectional structure of the high-frequency photodetector package base provided by the embodiment of the present invention provided by the multilayer ceramic pot package, and only show the Parts related to the embodiments of the present invention.

参照图1-3,本实施例提供的采用多层陶瓷罐式封装的高频光电探测器封装底座包括贴合的多层陶瓷基板1,所述多层陶瓷基板底部焊接有管脚2,顶部设有金属环3,各层陶瓷基板的上下表面均镀有导电金属层4,各层陶瓷基板上均分布有电路连接孔5,并且通过所述电路连接孔各层陶瓷基板组合固定为一体,所述多层陶瓷基板的上表面设有两个电源触点121、两个差分信号触点111,所述电源触点121、差分信号触点111穿过各层陶瓷基板连接到对应的管脚2,并且从多层陶瓷基板的下表面引出地管脚。Referring to Figures 1-3, the package base of the high-frequency photodetector provided in this embodiment using a multilayer ceramic pot package includes a bonded multilayer ceramic substrate 1, the bottom of the multilayer ceramic substrate is welded with pins 2, and the top is A metal ring 3 is provided, and the upper and lower surfaces of each layer of ceramic substrates are plated with a conductive metal layer 4, and circuit connection holes 5 are distributed on each layer of ceramic substrates, and the ceramic substrates of each layer are combined and fixed as a whole through the circuit connection holes, The upper surface of the multilayer ceramic substrate is provided with two power contacts 121 and two differential signal contacts 111, and the power contacts 121 and differential signal contacts 111 are connected to corresponding pins through each layer of the ceramic substrate 2, and lead out the ground pin from the lower surface of the multilayer ceramic substrate.

本实施例中,金属环用于与带透镜的罐型帽进行缝焊,承受缝焊时的相应压力,同时也可以作为大地连接,各层陶瓷基板上下表面电镀有金属导电层,电路连接孔中设有导电金属,起到导电连通各层陶瓷基板作用,通过电路连接孔各层陶瓷基板组合固定为一体,构成共面波导结构,而且高速信号线采用差分信号传输设计,差分信号在共面波导中传输,可以有效解决20GHz以上带宽信号的传输问题,传输损耗小,满足单通道20G及以上同轴型光电探测器件的要求。具体的,使用时,从所述两个电源触点121接入电压源,将高速差分信号从所述两个差分信号触点111接入,电压源穿过各层陶瓷基板传输到对应管脚,高速差分信号在各层陶瓷基板中传输,最后从对应的管脚输出。In this embodiment, the metal ring is used for seam welding with the can-shaped cap with lens, and bears the corresponding pressure during seam welding, and can also be used as a ground connection. The upper and lower surfaces of each layer of ceramic substrates are electroplated with metal conductive layers, and the circuit connection holes There is a conductive metal in the middle, which plays the role of conductively connecting the ceramic substrates of each layer. The ceramic substrates of each layer are combined and fixed through the circuit connection holes to form a coplanar waveguide structure. The high-speed signal line adopts a differential signal transmission design, and the differential signals are in the same plane. The transmission in the waveguide can effectively solve the transmission problem of signals with a bandwidth above 20GHz, and the transmission loss is small, which meets the requirements of single-channel 20G and above coaxial photodetection devices. Specifically, when in use, a voltage source is connected from the two power contacts 121, a high-speed differential signal is connected from the two differential signal contacts 111, and the voltage source is transmitted through each layer of ceramic substrate to the corresponding pin , high-speed differential signals are transmitted in each layer of ceramic substrates, and finally output from the corresponding pins.

上述结构中,作为一种优选实施方式,所述多层陶瓷基板1有四层,从顶部到底部依次为第一陶瓷基板11、第二陶瓷基板12、第三陶瓷基板13、第四陶瓷基板14,所述管脚有六根,两根电源管脚、两根差分信号管脚、两根地管脚.In the above structure, as a preferred embodiment, the multilayer ceramic substrate 1 has four layers, which are the first ceramic substrate 11, the second ceramic substrate 12, the third ceramic substrate 13, and the fourth ceramic substrate from top to bottom. 14. There are six pins, two power pins, two differential signal pins, and two ground pins.

下面描述各层陶瓷基板的结构,图4-7分别示出了第一陶瓷基板至第四陶瓷基板的上下表面结构,各层陶瓷基板上设有用于传输电源信号或者差分信号的触孔,所述电源触点周围、差分信号触点周围以及触孔周围存在一片用于与导电金属层隔离的空白区域,图中阴影部分为导电金属层,空白部分为空白区域。传输信号时,电压源信号通过所述电源触点并穿过各层的触孔传输至电源管脚。高速差分信号通过所述差分信号触点并穿过各层的触孔传输至差分信号管脚,这里电压源信号和高速差分信号穿过的触孔不同。另外,作为优选的,从图中可看出,相邻层陶瓷基板的接触面,空白区域完全重合。The structure of each layer of ceramic substrates is described below. Figures 4-7 show the upper and lower surface structures of the first ceramic substrate to the fourth ceramic substrate, and each layer of ceramic substrates is provided with contact holes for transmitting power signals or differential signals. There is a blank area around the power contacts, differential signal contacts and contact holes for isolation from the conductive metal layer. The shaded part in the figure is the conductive metal layer, and the blank part is the blank area. When transmitting signals, the voltage source signal is transmitted to the power pin through the power contact and through the contact hole of each layer. The high-speed differential signal is transmitted to the differential signal pin through the differential signal contact and through the contact hole of each layer, where the voltage source signal and the high-speed differential signal pass through different contact holes. In addition, as a preference, it can be seen from the figure that the contact surfaces of adjacent layers of ceramic substrates and the blank areas are completely overlapped.

作为一种实例列举,所述第一陶瓷基板11为D字形(D字形为由圆弧和圆弧上的弦组成的图形),第二陶瓷基板至第四陶瓷基板为圆形,第一陶瓷基板11的圆弧与金属环3内壁贴合,所述两个差分信号触点111位于第一陶瓷基板11的上表面,所述两个电源触点121位于所述第二陶瓷基板12的上表面,差分信号触点111以及电源触点121的周围均存在一定范围的空白区域,空白区域以外是金属导电层,第一陶瓷基板下表面的空白区域和金属导电层与上表面完全对称。As an example, the first ceramic substrate 11 is D-shaped (the D-shaped is a figure formed by an arc and a chord on the arc), the second ceramic substrate to the fourth ceramic substrate are circular, and the first ceramic substrate The arc of the substrate 11 is attached to the inner wall of the metal ring 3, the two differential signal contacts 111 are located on the upper surface of the first ceramic substrate 11, and the two power contacts 121 are located on the upper surface of the second ceramic substrate 12 On the surface, there is a certain range of blank areas around the differential signal contact 111 and the power contact 121. The metal conductive layer is outside the blank area. The blank area and the metal conductive layer on the lower surface of the first ceramic substrate are completely symmetrical to the upper surface.

所述第二陶瓷基板12上的触孔为信号触孔122,所述第三陶瓷基板13上的触孔分为电源触孔131、信号触孔132、转向触孔133,所述第四陶瓷基板14上的触孔分为电源触孔141和信号触孔142,第三、第四陶瓷基板上的电源触孔131、141与第二陶瓷基板上的电源触点121同轴且导通,所述电源管脚21与所述第四陶瓷基板下表面上的电源触孔141焊接,这样从电源触点121输入的电压源可以从电源管脚21输出。The contact holes on the second ceramic substrate 12 are signal contact holes 122, the contact holes on the third ceramic substrate 13 are divided into power contact holes 131, signal contact holes 132, and steering contact holes 133, and the fourth ceramic The contact holes on the substrate 14 are divided into power contact holes 141 and signal contact holes 142. The power contact holes 131 and 141 on the third and fourth ceramic substrates are coaxial and conductive with the power contacts 121 on the second ceramic substrate. The power pin 21 is soldered to the power contact hole 141 on the lower surface of the fourth ceramic substrate, so that the voltage source input from the power contact 121 can be output from the power pin 21 .

所述第二、第三陶瓷基板上的信号触孔122、132与第一陶瓷基板上的差分信号触点111同轴且导通,第三陶瓷基板上的转向触孔133与第四陶瓷基板上的信号触孔142同轴且导通,所述第三陶瓷基板上的转向触孔133与信号触孔132一对一电连接,所述差分信号管脚22与所述第四陶瓷基板下表面上的信号触孔142焊接,所述地管脚23焊接到所述第四陶瓷基板下表面的金属导电层。这样,从差分信号触点111输入的高速差分信号可以从差分信号管脚22输出。The signal contact holes 122, 132 on the second and third ceramic substrates are coaxial and connected to the differential signal contacts 111 on the first ceramic substrate, and the steering contact hole 133 on the third ceramic substrate is connected to the fourth ceramic substrate. The signal contact hole 142 on the top is coaxial and conductive, the steering contact hole 133 on the third ceramic substrate is electrically connected to the signal contact hole 132 one-to-one, and the differential signal pin 22 is connected to the bottom of the fourth ceramic substrate. The signal contact hole 142 on the surface is welded, and the ground pin 23 is welded to the metal conductive layer on the lower surface of the fourth ceramic substrate. In this way, a high-speed differential signal input from the differential signal contact 111 can be output from the differential signal pin 22 .

本实施例中,各层陶瓷基板上的电路连接孔与空白区域的距离大于距离安全值,保证信号传输不受影响。另外,作为一种优选实施方式,所述金属导电层的材质为金,金具有良好的导电性能,多层陶瓷基板构成的共面波导的屏蔽性能更好,可以进一步保障信号传输。最后,本发明外形结构与普通罐型封装底座兼容,可以兼容目前成熟工艺,易于批量生产,降低成本。In this embodiment, the distance between the circuit connection hole on each layer of the ceramic substrate and the blank area is greater than a safe distance, so as to ensure that the signal transmission is not affected. In addition, as a preferred implementation manner, the metal conductive layer is made of gold, which has good electrical conductivity, and the coplanar waveguide formed by the multilayer ceramic substrate has better shielding performance, which can further ensure signal transmission. Finally, the appearance structure of the present invention is compatible with common can-type package bases, can be compatible with current mature technology, is easy to produce in batches, and reduces costs.

以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims (9)

1. a high frequency light electric explorer encapsulation base plate that adopts the encapsulation of multi-layer ceramics pot type, is characterized in that,Described high frequency light electric explorer encapsulation base plate comprises the multilayer ceramic substrate of laminating, at the bottom of described multilayer ceramic substratePortion is welded with pin, and top is provided with becket, and the upper and lower surface of each layer of ceramic substrate is all coated with conductive metal layer,On each layer of ceramic substrate, be distributed with circuit connecting hole, and by each layer of ceramic substrate of described circuit connecting holeCombination is fixed as one, and the upper surface of described multilayer ceramic substrate is provided with two power contacts, two difference lettersNumber contact, described power contact, differential signal contacts are connected to corresponding pin through each layer of ceramic substrate,And draw ground pin from the lower surface of multilayer ceramic substrate.
2. high frequency light electric explorer encapsulation base plate as claimed in claim 1, is characterized in that, described multilayer potteryPorcelain substrate has four layers, is followed successively by from the top to the bottom the first ceramic substrate, the second ceramic substrate, the 3rd potteryPorcelain substrate, the 4th ceramic substrate, described pin has the six roots of sensation, comprises two power pin, two differential signalsPin, two ground pins, each layer of ceramic substrate is provided with tactile hole, around described power contact, differential signalContact around and tactile hole around exist a slice for the white space of conductive metal layer isolation, described power supplyContact, differential signal contacts are connected to corresponding pin through each layer of tactile hole.
3. high frequency light electric explorer encapsulation base plate as claimed in claim 2, is characterized in that adjacent layer potteryThe contact-making surface of substrate, white space overlaps completely.
4. high frequency light electric explorer encapsulation base plate as claimed in claim 3, is characterized in that, described the first potteryPorcelain substrate is D font, and the second ceramic substrate to the four ceramic substrates are circular, the circular arc of the first ceramic substrateWith the laminating of becket inwall, described two differential signal contacts are positioned at the upper surface of the first ceramic substrate, described inTwo power contacts are positioned at the upper surface of described the second ceramic substrate, differential signal contacts and power contactAll having the white space of certain limit around, is metal conducting layer beyond white space, the first ceramic substrateThe white space of lower surface and metal conducting layer and upper surface full symmetric.
5. high frequency light electric explorer encapsulation base plate as claimed in claim 4, is characterized in that, described the second potteryTactile hole on porcelain substrate is that signal touches hole, and the tactile hole on described the 3rd ceramic substrate is divided into power supply and touches hole, signalTouch hole, turn to tactile hole, the tactile hole on described the 4th ceramic substrate is divided into power supply and touches hole and the tactile hole of signal, the 3rd,The tactile hole of power supply on the 4th ceramic substrate is coaxial and conducting with the power contact on the second ceramic substrate.
6. high frequency light electric explorer encapsulation base plate as claimed in claim 5, is characterized in that, described second,The tactile hole of signal on the 3rd ceramic substrate is coaxial and conducting with the differential signal contacts on the first ceramic substrate, theThe signal that turning on three ceramic substrates touched on Kong Yu tetra-ceramic substrates touches hole coaxially and conducting, and the described the 3rdTurning on ceramic substrate touched hole and is electrically connected one to one with the tactile hole of signal.
7. high frequency light electric explorer encapsulation base plate as claimed in claim 6, is characterized in that described power supply pipePower supply on pin and described the 4th ceramic substrate lower surface touches eyelet welding and connects, described differential signal pin and described theSignal on four ceramic substrate lower surfaces touches eyelet welding and connects, and described ground pin is welded under described the 4th ceramic substrateThe metal conducting layer on surface.
8. high frequency light electric explorer encapsulation base plate as described in claim 2-7 any one, is characterized in that, eachCircuit connecting hole on layer ceramic substrate and the distance of white space are greater than apart from safety value.
9. high frequency light electric explorer encapsulation base plate as claimed in claim 8, is characterized in that described metal guideThe material of electricity layer is gold.
CN201410340530.0A 2014-07-17 2014-07-17 Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation Active CN104124285B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201410340530.0A CN104124285B (en) 2014-07-17 2014-07-17 Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation
JP2017510718A JP6370473B2 (en) 2014-07-17 2014-12-19 High frequency photoelectric detector package base using multilayer ceramic tank type package
US15/316,985 US10312383B2 (en) 2014-07-17 2014-12-19 High-frequency photoelectric detector encapsulation base tank-packaged by using multi-layer ceramic
EP14897521.2A EP3125299B1 (en) 2014-07-17 2014-12-19 Can-packaged multi-layer ceramic encapsulation base for high-frequency photoelectric detectors
PCT/CN2014/094320 WO2016008264A1 (en) 2014-07-17 2014-12-19 High-frequency photoelectric detector encapsulation base encapsulated by adopting multi-layer ceramic tin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410340530.0A CN104124285B (en) 2014-07-17 2014-07-17 Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation

Publications (2)

Publication Number Publication Date
CN104124285A CN104124285A (en) 2014-10-29
CN104124285B true CN104124285B (en) 2016-05-04

Family

ID=51769633

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410340530.0A Active CN104124285B (en) 2014-07-17 2014-07-17 Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation

Country Status (5)

Country Link
US (1) US10312383B2 (en)
EP (1) EP3125299B1 (en)
JP (1) JP6370473B2 (en)
CN (1) CN104124285B (en)
WO (1) WO2016008264A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104124285B (en) * 2014-07-17 2016-05-04 武汉电信器件有限公司 Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation
CN107452816B (en) * 2017-07-13 2019-05-31 武汉电信器件有限公司 A kind of backlight sense photodiode structure and its processing method
JP6924641B2 (en) * 2017-07-17 2021-08-25 日本特殊陶業株式会社 Light emitting element mounting package and its manufacturing method
CN107452815A (en) * 2017-07-31 2017-12-08 青岛海信宽带多媒体技术有限公司 The optical device and optical module of a kind of coaxial packaging
CN108333693B (en) * 2018-02-11 2020-02-14 青岛海信宽带多媒体技术有限公司 Optical sub-module and optical module
WO2019154375A1 (en) * 2018-02-11 2019-08-15 青岛海信宽带多媒体技术有限公司 Optical sub-module and optical module
CN108324090A (en) * 2018-04-16 2018-07-27 广东天际电器股份有限公司 A kind of same shaft multifunctional detection stews device
CN111834302B (en) * 2020-07-28 2022-03-11 武汉邮埃服光电科技有限公司 A transistor tube seat and a transistor hermetically sealed packaging structure
CN112202046B (en) * 2020-08-28 2022-06-28 武汉联特科技股份有限公司 Novel TO packaging structure
CN112466788B (en) * 2020-11-25 2022-08-26 中国电子科技集团公司第四十四研究所 Filling and sealing clamp device for photoelectric coupler and using method thereof
CN114154858A (en) * 2021-12-03 2022-03-08 武汉利之达科技股份有限公司 A Sampling Method to Improve the Performance Testing Efficiency of Ceramic Substrates
CN115291340A (en) * 2022-07-13 2022-11-04 广州奥鑫通讯设备有限公司 Optical device for optical fiber gyroscope and preparation method thereof
CN115307617A (en) * 2022-07-13 2022-11-08 广州奥鑫通讯设备有限公司 Optical device for optical fiber gyroscope and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201156095Y (en) * 2007-12-14 2008-11-26 武汉电信器件有限公司 Plastic encapsulated coaxial optical module
CN201629338U (en) * 2010-03-05 2010-11-10 河北中瓷电子科技有限公司 Metal-ceramic coaxial packaging shell for photoelectric receiving components

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133597A (en) * 1979-04-06 1980-10-17 Hitachi Ltd Multilayer circuit board
US4499655A (en) * 1981-03-18 1985-02-19 General Electric Company Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire
JPH0444393A (en) * 1990-06-11 1992-02-14 Matsushita Electric Works Ltd Manufacture of multilayer ceramic circuit board
JP3083416B2 (en) * 1992-11-06 2000-09-04 進工業株式会社 Delay line element and method of manufacturing the same
JPH07283535A (en) * 1993-04-15 1995-10-27 Yamatoya & Co Ltd Method for manufacturing ceramic multilayer printed wiring board
US6455930B1 (en) * 1999-12-13 2002-09-24 Lamina Ceramics, Inc. Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology
US6809413B1 (en) * 2000-05-16 2004-10-26 Sandia Corporation Microelectronic device package with an integral window mounted in a recessed lip
EP1468475A2 (en) * 2002-01-18 2004-10-20 Oepic, Inc. High-speed to-can optoelectronic packages
US7255494B2 (en) * 2003-05-23 2007-08-14 Intel Corporation Low-profile package for housing an optoelectronic assembly
JP4002231B2 (en) 2003-11-12 2007-10-31 浜松ホトニクス株式会社 Optical module for high-frequency signal transmission and manufacturing method thereof
US7476040B2 (en) * 2004-02-02 2009-01-13 Jds Uniphase Corporation Compact optical sub-assembly with ceramic package
US7053729B2 (en) * 2004-08-23 2006-05-30 Kyocera America, Inc. Impedence matching along verticle path of microwave vias in multilayer packages
CN1790845A (en) 2004-12-17 2006-06-21 上海飞恩微电子有限公司 High-speed broadband photoelectric transmission TO-CAN assembly
US7118292B2 (en) 2005-01-24 2006-10-10 Emcore Corporation Coaxial cooled laser modules with integrated thermal electric cooler and optical components
JP4823155B2 (en) * 2006-10-27 2011-11-24 京セラ株式会社 Electronic component storage package, electronic device, and optical semiconductor device
JP2009182251A (en) * 2008-01-31 2009-08-13 Fujitsu Ltd Optical receiver subassembly and optical receiver module
JP2009212400A (en) * 2008-03-05 2009-09-17 Ngk Spark Plug Co Ltd High-frequency package
JP5273600B2 (en) * 2008-06-17 2013-08-28 日本オクラロ株式会社 Optical semiconductor device
JP5462010B2 (en) * 2010-01-27 2014-04-02 日本オクラロ株式会社 Optical module
CN201741982U (en) * 2010-03-05 2011-02-09 河北中瓷电子科技有限公司 Metal wall-multilayer ceramic insulator encapsulating shell for semiconductor laser
CN104124285B (en) * 2014-07-17 2016-05-04 武汉电信器件有限公司 Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201156095Y (en) * 2007-12-14 2008-11-26 武汉电信器件有限公司 Plastic encapsulated coaxial optical module
CN201629338U (en) * 2010-03-05 2010-11-10 河北中瓷电子科技有限公司 Metal-ceramic coaxial packaging shell for photoelectric receiving components

Also Published As

Publication number Publication date
EP3125299A1 (en) 2017-02-01
JP2017516319A (en) 2017-06-15
WO2016008264A1 (en) 2016-01-21
JP6370473B2 (en) 2018-08-08
US20170125611A1 (en) 2017-05-04
CN104124285A (en) 2014-10-29
EP3125299B1 (en) 2020-01-15
US10312383B2 (en) 2019-06-04
EP3125299A4 (en) 2017-05-17

Similar Documents

Publication Publication Date Title
CN104124285B (en) Adopt the high frequency light electric explorer encapsulation base plate of multi-layer ceramics pot type encapsulation
JP5580994B2 (en) Optical module
US9204537B2 (en) High-speed pluggable rigid-end flex circuit
CN106054327A (en) Coaxial packaging light communication device
CN102856302B (en) Three-dimensional packaging device for photonic integrated chip matching circuit
CN106887471B (en) Optical module
WO2022141953A1 (en) To package structure
CN108988120A (en) The laser and optical module of coaxial packaging
CN108107514B (en) Tube shell structure for box packaging optical device
CN202172395U (en) Ultra-thin leadless light MOS relay
JP2020021911A (en) Optical subassembly and optical module
JP2020021912A (en) Optical subassembly and optical module
CN110828606B (en) A ceramic photoelectric coupler and a method for manufacturing the same
CN201629338U (en) Metal-ceramic coaxial packaging shell for photoelectric receiving components
JP2003046057A (en) Semiconductor device
CN103762407B (en) A kind of Miniaturization multi-layer ceramic bridge
CN105789142A (en) Organic substrate high-density integrated three-dimensional microwave circuit structure
CN113300150B (en) Combined electric connector
CN106793459A (en) A kind of multiplayer microwave circuit board interconnection structure
CN102176607B (en) Drive switching device of transistor outline (TO) packaged vertical cavity surface emitting laser (VCSEL) two-dimensional circular array module
CN202906868U (en) Leadless large power light metal oxide semiconductor (MOS) solid state relay
CN209357725U (en) Lens integration infrared tube mould group and the infrared sensor with the mould group
TWI662724B (en) Flip-chip lighting module
CN105183682A (en) Micro-transformer based RS-232 transceiver
CN103579899A (en) Laser array heat sink module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant