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CN104090625A - Current mirror for low supply voltage - Google Patents

Current mirror for low supply voltage Download PDF

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Publication number
CN104090625A
CN104090625A CN201410315510.8A CN201410315510A CN104090625A CN 104090625 A CN104090625 A CN 104090625A CN 201410315510 A CN201410315510 A CN 201410315510A CN 104090625 A CN104090625 A CN 104090625A
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source
current source
gate
positive pole
power supply
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CN104090625B (en
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王卓
赵倬毅
石跃
董渊
柯普仁
周泽坤
张波
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University of Electronic Science and Technology of China
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Abstract

本发明涉及集成电路技术领域,具体的说是涉及一种电流镜。本发明电流镜,其特征在于,该电流镜由PMOS管MP1、MP2,NMOS管MN1,电容C1、C2,电阻R1,输入电流源,输出端电流源和偏置电流源构成;其中,MP1的源极接电源VCC,其栅极接MP2的栅极,其漏极接输入电流源的正极;输入电流源的负极接地VSS;MN1的漏极接电源VCC,其栅极接输入电流源的正极,其源极接偏置电流源的正极,其衬底通过R1接MP1栅极与MP2栅极的连接点;MP1的源极与MN1的漏极的连接点依次通过C1、C2接MN1栅极与输入电流源正极的连接点;MP2的源极接电源VCC,其漏极接输出电流源的正极。本发明的有益效果为,适合在低电源电压下使用;同时还提高了电流镜的PSR。本发明尤其适用于电流镜电路。

The invention relates to the technical field of integrated circuits, in particular to a current mirror. The current mirror of the present invention is characterized in that the current mirror is composed of PMOS transistors MP1, MP2, NMOS transistor MN1, capacitors C1, C2, resistor R1, input current source, output terminal current source and bias current source; wherein, MP1 The source is connected to the power supply VCC, its gate is connected to the gate of MP2, and its drain is connected to the positive pole of the input current source; the negative pole of the input current source is grounded to VSS; the drain of MN1 is connected to the power supply VCC, and its gate is connected to the positive pole of the input current source , its source is connected to the positive pole of the bias current source, and its substrate is connected to the connection point between the MP1 gate and the MP2 gate through R1; the connection point between the source of MP1 and the drain of MN1 is connected to the gate of MN1 through C1 and C2 in turn The connection point with the positive pole of the input current source; the source of MP2 is connected to the power supply VCC, and its drain is connected to the positive pole of the output current source. The beneficial effect of the invention is that it is suitable for use under low power supply voltage; meanwhile, the PSR of the current mirror is improved. The invention is particularly applicable to current mirror circuits.

Description

一种用于低电源电压的电流镜A Current Mirror for Low Supply Voltage

技术领域technical field

本发明涉及集成电路技术领域,具体的说是涉及一种电流镜。The invention relates to the technical field of integrated circuits, in particular to a current mirror.

背景技术Background technique

电流镜是模拟电路中一个重要的电路单元,它既可以作为偏置单元,也可以作为信号处理单元,在模拟电路和射频电路中被广泛应用。A current mirror is an important circuit unit in an analog circuit. It can be used as a bias unit or a signal processing unit, and is widely used in analog circuits and radio frequency circuits.

图1是现有的一种电流镜电路示意图,由输入电流源Iin、输出电流源Iout和PMOS管MP1、MP2组成。其中,MP1管的栅极与漏极短接,这样MP1管的过驱动电压为:FIG. 1 is a schematic diagram of an existing current mirror circuit, which is composed of an input current source I in , an output current source I out and PMOS transistors MP1 and MP2. Among them, the gate and drain of the MP1 tube are short-circuited, so the overdrive voltage of the MP1 tube is:

VOV1=VSG1-|VTHP1|V OV1 = V SG1 −|V THP1 |

而MP1管的源漏电压为:The source-drain voltage of the MP1 tube is:

VSD1=VSG1 V SD1 = V SG1

其中|VTHP1|为PMOS管MP1的阈值电压的绝对值,VSG1为MP1管源极到栅极之间的电压。从上面两个式子可以看出VSD1比MP1管的过驱动电压VOV1大了一个PMOS管MP1的阈值电压的绝对值,这导致电压余度的减少,因此这种传统的电流镜电路不适合在低电源电压下工作。Where |V THP1 | is the absolute value of the threshold voltage of the PMOS transistor MP1, and V SG1 is the voltage between the source and the gate of the MP1 transistor. From the above two formulas, it can be seen that V SD1 is greater than the overdrive voltage V OV1 of MP1 by the absolute value of the threshold voltage of PMOS transistor MP1, which leads to a reduction in voltage margin. Therefore, this traditional current mirror circuit does not Suitable for operation at low supply voltages.

发明内容Contents of the invention

本发明的目的,就是针对上述传统电流镜电路不适合在低电源电压下工作的问题,提出了一种适用于低电源电压的电流镜。The object of the present invention is to propose a current mirror suitable for low power supply voltage in view of the above-mentioned problem that the traditional current mirror circuit is not suitable for working under low power supply voltage.

本发明的技术方案是,一种用于低电源电压的电流镜,其特征在于,该电流镜由PMOS管MP1、MP2,NMOS管MN1,电容C1、C2,电阻R1,输入电流源,输出端电流源和偏置电流源构成;其中,MP1的源极接电源VCC,其栅极接MP2的栅极,其漏极接输入电流源的正极;输入电流源的负极接地VSS;MN1的漏极接电源VCC,其栅极接输入电流源的正极,其源极接偏置电流源的正极,其衬底通过R1接MP1栅极与MP2栅极的连接点;偏置电流源的负极接地VSS;MP1的源极与MN1的漏极的连接点依次通过C1、C2接MN1栅极与输入电流源正极的连接点;MP2的源极接电源VCC,其漏极接输出电流源的正极;输出电流源的负极接地VSS。The technical solution of the present invention is a current mirror for low power supply voltage, which is characterized in that the current mirror is composed of PMOS transistors MP1 and MP2, NMOS transistor MN1, capacitors C1 and C2, resistor R1, input current source, and output terminal The current source and the bias current source are composed; among them, the source of MP1 is connected to the power supply VCC, its gate is connected to the gate of MP2, and its drain is connected to the positive pole of the input current source; the negative pole of the input current source is grounded to VSS; the drain of MN1 Connect to the power supply VCC, its gate is connected to the positive pole of the input current source, its source is connected to the positive pole of the bias current source, and its substrate is connected to the connection point between the gate of MP1 and the gate of MP2 through R1; the negative pole of the bias current source is grounded to VSS ; The connection point between the source of MP1 and the drain of MN1 is connected to the connection point between the gate of MN1 and the positive pole of the input current source through C1 and C2 in turn; the source of MP2 is connected to the power supply VCC, and its drain is connected to the positive pole of the output current source; output The negative terminal of the current source is grounded to VSS.

本发明的有益效果为,适合在低电源电压下使用;同时还提高了电流镜的PSR(对电源噪声的抑制)。The beneficial effect of the present invention is that it is suitable for use under low power supply voltage; at the same time, the PSR of the current mirror (suppression of power supply noise) is also improved.

附图说明Description of drawings

图1是传统的电流镜结构示意图;Fig. 1 is a schematic diagram of a traditional current mirror structure;

图2是本发明的电流镜结构示意图。Fig. 2 is a schematic structural diagram of the current mirror of the present invention.

具体实施方式Detailed ways

下面结合附图对本发明的具体实施方式进行描述The specific embodiment of the present invention is described below in conjunction with accompanying drawing

如图2所示,本发明的电流镜,由PMOS管MP1、MP2,NMOS管MN1,电容C1、C2,电阻R1,输入电流源,输出端电流源和偏置电流源构成;其中,MP1的源极接电源VCC,其栅极接MP2的栅极,其漏极接输入电流源的正极;输入电流源的负极接地VSS;MN1的漏极接电源VCC,其栅极接输入电流源的正极,其源极接偏置电流源的正极,其衬底通过R1接MP1栅极与MP2栅极的连接点;偏置电流源的负极接地VSS;MP1的源极与MN1的漏极的连接点依次通过C1、C2接MN1栅极与输入电流源正极的连接点;MP2的源极接电源VCC,其漏极接输出电流源的正极;输出电流源的负极接地VSS。As shown in Figure 2, the current mirror of the present invention is made of PMOS tubes MP1, MP2, NMOS tube MN1, capacitors C1, C2, resistor R1, input current source, output terminal current source and bias current source; wherein, MP1 The source is connected to the power supply VCC, its gate is connected to the gate of MP2, and its drain is connected to the positive pole of the input current source; the negative pole of the input current source is grounded to VSS; the drain of MN1 is connected to the power supply VCC, and its gate is connected to the positive pole of the input current source , its source is connected to the positive pole of the bias current source, and its substrate is connected to the connection point between the gate of MP1 and the gate of MP2 through R1; the negative pole of the bias current source is grounded to VSS; the connection point of the source of MP1 and the drain of MN1 Connect the connection point between the gate of MN1 and the positive pole of the input current source through C1 and C2 in turn; the source of MP2 is connected to the power supply VCC, and its drain is connected to the positive pole of the output current source; the negative pole of the output current source is grounded to VSS.

与现有的电流镜相比,MP1管的栅极并没有短接到漏极,而是将MP1管的漏极电压经过一个由NMOS管MN1和偏置电流源Ib构成的源随放大器降低一个MN1管的栅源电压VGS1,然后串联一个大电阻,接至MP1管的栅极,源随放大器中的NMOS管MN1工作在亚阈区,MN1管的VGS1大约等于该NMOS管的阈值电压VTHN1,因为NMOS管的阈值电压VTHN1小于PMOS管MP1的阈值电压的绝对值|VTHP1|,因此可以使得MP1管仍然工作在饱和区,实现电流镜像原理。同时将MP1管的漏极电压提高了VTHN1,MP1管源极到漏极之间的电压减小了VTHN1。MP1管源极到漏极之间的电压为:Compared with the existing current mirror, the gate of the MP1 transistor is not shorted to the drain, but the drain voltage of the MP1 transistor is lowered through a source-following amplifier composed of an NMOS transistor MN1 and a bias current source I b The gate-source voltage V GS1 of a MN1 transistor is connected in series with a large resistor to the gate of the MP1 transistor. The NMOS transistor MN1 in the source follower amplifier works in the subthreshold region, and the V GS1 of the MN1 transistor is approximately equal to the threshold of the NMOS transistor. Voltage V THN1 , because the threshold voltage V THN1 of the NMOS transistor is smaller than the absolute value |V THP1 | of the threshold voltage of the PMOS transistor MP1, so the MP1 transistor can still work in the saturation region and realize the principle of current mirroring. At the same time, the drain voltage of the MP1 tube is increased by V THN1 , and the voltage between the source and the drain of the MP1 tube is reduced by V THN1 . The voltage between the source and drain of the MP1 tube is:

VSD(MP1)≈VSG(MP1)-VTHN1   (1)V SD(MP1) ≈ V SG(MP1) -V THN1 (1)

式(1)中VSG(MP1)代表MP1管源极到栅极之间的电压。In the formula (1), V SG (MP1) represents the voltage between the source and the gate of the MP1 tube.

这样电流镜节约了VTHN1的电压余度,使得电流镜特别适合在低电源电压下工作。In this way, the current mirror saves the voltage margin of V THN1 , making the current mirror especially suitable for working under low power supply voltage.

本发明具有高PSR的特性,电容C1与现有的电流镜一样,将电源噪声耦合到PMOS管的栅极,提高电流镜的PSR。然而由NMOS管MN1与偏置电流源Ib组成的这条支路,MN1管的源极这点受到电源噪声影响较大。利用电容C1与C2构成的电源通路及MN1管漏极的电源通路,可知The invention has the characteristic of high PSR, and the capacitor C1, like the existing current mirror, couples the power supply noise to the gate of the PMOS tube to improve the PSR of the current mirror. However, in the branch composed of the NMOS transistor MN1 and the bias current source Ib , the source of the MN1 transistor is greatly affected by power supply noise. Using the power path formed by capacitors C1 and C2 and the power path of the drain of the MN1 tube, it can be seen that

VV ~~ SS (( MNMN 11 )) ≈≈ VV ~~ CCCC RR 11 ++ 11 // sthe s (( CC 11 ++ CC 22 )) 11 // gg mm (( MNMN 11 )) ++ RR 11 ++ 11 // sthe s (( CC 11 ++ CC 22 )) ≈≈ VV ~~ CCCC -- -- -- (( 22 ))

这里引入了一个大电阻R1,减小了MP1管与MP2管栅极对MN1管源极这点的电源噪声的分压。A large resistor R1 is introduced here to reduce the voltage division of the power supply noise from the gates of MP1 and MP2 to the source of MN1.

VV ~~ GG (( MPMP 11 ,, MPMP 22 )) ≈≈ VV ~~ SS (( MNMN 11 )) // [[ sthe s RR 11 (( CC 11 ++ CC 22 )) ++ 11 ]] ++ VV ~~ CCCC {{ sthe s RR 11 (( CC 11 ++ CC 22 )) // [[ sthe s RR 11 (( CC 11 ++ CC 22 )) ++ 11 ]] }} -- -- -- (( 33 ))

由式(2)和式(3),可以得出MP1和MP2的栅极受到电源噪声的影响为:From formula (2) and formula (3), it can be concluded that the gates of MP1 and MP2 are affected by power supply noise as:

VV ~~ GG (( MPMP 11 ,, MPMP 22 )) ≈≈ VV ~~ CCCC -- -- -- (( 44 ))

式(2)~(4)中指的是电源噪声,分别代表MN1管源极和MP1与MP2的栅极受影响的电压小信号,gm(MN1)指的是MN1管的跨导。由式(4)可以得出MP1管和MP2管的栅极受到电源噪声的影响增益近似为1,则保证了MP1管和MP2管的栅源电压在所有频率范围内都接近为零,提高了电流镜的PSR。In formula (2)~(4) Refers to power supply noise, and Respectively represent the source of MN1 tube and the gates of MP1 and MP2 Affected voltage small signal, g m(MN1) refers to the transconductance of the MN1 tube. From formula (4), it can be concluded that the gates of MP1 and MP2 are affected by power supply noise and the gain is approximately 1, which ensures that the gate-source voltage of MP1 and MP2 is close to zero in all frequency ranges, improving the PSR of the current mirror.

此外,电容C2与MP1构成了米勒补偿结构,结合电容C1,将MP1管栅极设置为了大电容结点。在通过大电阻R1的设置,可以将该结构中的反馈环路的主极点设置在MP1管的栅极,保证系统的稳定工作。In addition, the capacitor C2 and MP1 form a Miller compensation structure, combined with the capacitor C1, the gate of the MP1 transistor is set as a high-capacitance node. Through the setting of the large resistance R1, the main pole of the feedback loop in this structure can be set at the gate of the MP1 tube, so as to ensure the stable operation of the system.

Claims (1)

1. for a current mirror for low supply voltage, it is characterized in that, this current mirror is managed MP1, MP2 by PMOS, and NMOS manages MN1, capacitor C 1, C2, and resistance R 1, input current source, output current source and bias current sources form; Wherein, the source electrode of MP1 meets power supply VCC, and its grid connects the grid of MP2, and its drain electrode connects the positive pole of input current source; The minus earth VSS of input current source; The drain electrode of MN1 meets power supply VCC, and its grid connects the positive pole of input current source, and its source electrode connects the positive pole of bias current sources, and its substrate connects the tie point of MP1 grid and MP2 grid by R1; The minus earth VSS of bias current sources; The tie point of the source electrode of MP1 and the drain electrode of MN1 connects the tie point of MN1 grid and input current source positive pole successively by C1, C2; The source electrode of MP2 meets power supply VCC, and its drain electrode connects the positive pole of output current source; The minus earth VSS of output current source.
CN201410315510.8A 2014-07-03 2014-07-03 A kind of current mirror for low supply voltage Expired - Fee Related CN104090625B (en)

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CN104898760A (en) * 2015-04-30 2015-09-09 中国电子科技集团公司第三十八研究所 Current mirror circuit suitable for low voltage environment
CN106406419A (en) * 2016-10-11 2017-02-15 北京航空航天大学 Low-sensitivity low-voltage current mirror
CN106933297A (en) * 2017-05-06 2017-07-07 湖南融和微电子有限公司 A kind of current mirroring circuit
CN108319324A (en) * 2018-03-23 2018-07-24 上海唯捷创芯电子技术有限公司 A kind of current mirroring circuit that power supply noise is non-sensitive, chip and communication terminal
CN109283965A (en) * 2018-11-28 2019-01-29 苏州大学 A low-dropout mirror current source circuit
CN109643137A (en) * 2018-05-31 2019-04-16 深圳市汇顶科技股份有限公司 Low pressure reference current circuit
US10429877B1 (en) 2018-05-31 2019-10-01 Shenzhen GOODIX Technology Co., Ltd. Low-voltage reference current circuit

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104898760A (en) * 2015-04-30 2015-09-09 中国电子科技集团公司第三十八研究所 Current mirror circuit suitable for low voltage environment
CN106406419A (en) * 2016-10-11 2017-02-15 北京航空航天大学 Low-sensitivity low-voltage current mirror
CN106406419B (en) * 2016-10-11 2018-02-16 北京航空航天大学 A kind of low sensitivity low-voltage current mirror
CN106933297A (en) * 2017-05-06 2017-07-07 湖南融和微电子有限公司 A kind of current mirroring circuit
CN106933297B (en) * 2017-05-06 2018-06-15 湖南融和微电子有限公司 A kind of current mirroring circuit
CN108319324A (en) * 2018-03-23 2018-07-24 上海唯捷创芯电子技术有限公司 A kind of current mirroring circuit that power supply noise is non-sensitive, chip and communication terminal
CN108319324B (en) * 2018-03-23 2020-06-30 上海唯捷创芯电子技术有限公司 Power supply noise insensitive current mirror circuit, chip and communication terminal
WO2019227870A1 (en) * 2018-05-31 2019-12-05 Shenzhen GOODIX Technology Co., Ltd. Low-voltage reference current circuit
US10429877B1 (en) 2018-05-31 2019-10-01 Shenzhen GOODIX Technology Co., Ltd. Low-voltage reference current circuit
CN109643137A (en) * 2018-05-31 2019-04-16 深圳市汇顶科技股份有限公司 Low pressure reference current circuit
US10877504B2 (en) 2018-05-31 2020-12-29 Shenzhen GOODIX Technology Co., Ltd. Low-voltage reference current circuit
CN109283965A (en) * 2018-11-28 2019-01-29 苏州大学 A low-dropout mirror current source circuit
CN109283965B (en) * 2018-11-28 2020-07-24 苏州大学 Low-voltage-drop mirror current source circuit

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