CN104058366A - Fabrication method of microelectromechanical structure - Google Patents
Fabrication method of microelectromechanical structure Download PDFInfo
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- CN104058366A CN104058366A CN201310087534.8A CN201310087534A CN104058366A CN 104058366 A CN104058366 A CN 104058366A CN 201310087534 A CN201310087534 A CN 201310087534A CN 104058366 A CN104058366 A CN 104058366A
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- micro electromechanical
- accommodation space
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- electromechanical structure
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- 238000000034 method Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 60
- 230000004308 accommodation Effects 0.000 claims description 42
- 239000012530 fluid Substances 0.000 claims description 38
- 238000002360 preparation method Methods 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 20
- 230000001050 lubricating effect Effects 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000004809 Teflon Substances 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229920002545 silicone oil Polymers 0.000 claims description 4
- 239000004568 cement Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000005060 rubber Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 7
- 229920000297 Rayon Polymers 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a manufacturing method of a micro-electromechanical structure, which does not need to use an additional adhesive and comprises the following steps: firstly, manufacturing a micro-electromechanical structure on a first substrate; forming a covering liquid accommodating space on the first or second substrate; and fixing the second substrate to the first substrate with pressure. Before pressurization, the two substrates are inverted so that the covering liquid surrounds the contact surfaces of the two substrates.
Description
Technical field
The present invention relates to a kind of preparation method of micro electromechanical structure, particularly relates to the preparation method of the micro electromechanical structure of interior containing fluid, and the present invention discloses a kind of micro electromechanical structure made from the method.
Background technology
In micro electromechanical structure, sometimes need to be in structure containing fluid, to utilize the characteristic of this fluid, provide certain function.This kind of micro electromechanical structure comprises and being commonly referred to as the product of " liquid capacitance-type tilt micro-sensor " (liquid capacitive micro inclinometer).
Tilt micro-sensor as example taking liquid capacitance-type, in the time making, need first on substrate, to make the structure that comprises slant sensor mechanism.This structure also may comprise relevant sensing circuit.Secondly, need to, at another substrate, normally, on glass substrate, make the structure that comprises accommodation space.Then, in this slant sensor structure or in the structure of this accommodation space, add fluid, then by two structure combinations, set, forms required slant sensor.The micro electromechanical structure that other use fluid, also can use with the essentially identical operation of said method and make.This kind of preparation method and the structure made from the method, the content of No. 101135550 patent application case of Taiwan patent that can apply for reference to same applicant " liquid capacitance-type tilt micro-sensor ".
Above-mentioned micro electromechanical structure preparation method must be used viscose glue, with the structure of the structure in conjunction with this sensor side and this accommodation space.Although the viscose glue of many types and kind can use at this micro electromechanical structure, because the combination interface of this sensor side may comprise multiple material, its physics, chemical property are different; And the combination interface of this accommodation space side can use photoresist conventionally, make with facility.Selected viscose glue may not be included with this combination interface material completely compatible.Under this kind of small size, the incompatible problem that may cause occurring fluid leakage in making, taking care of, transport or use that some are small.
In addition, in the time of the structure of the structure in conjunction with this sensor side and this accommodation space, the object that need to use high temperature or high pressure to reach joint, solidified or anneal.But high temperature or high pressure easily cause the fluid vaporization in structure, produce high pressure and leaking.The result of fluid leakage is except increasing the disposal costs on making, and the microcomputer electric component function of making or accuracy will be subject to certain impact.So reduce the qualification rate of producing.
Therefore current industry need provide a kind of micro electromechanical structure preparation method of improvement, and the method does not need to use viscose glue, can, in conjunction with the structure of the structure of sensor side and accommodation space, form complete micro electromechanical structure.
Also the micro electromechanical structure preparation method that needs a kind of novelty, the method can prevent that fluid from leaking in structure fabrication process simultaneously.
Summary of the invention
Object of the present invention is exactly that a kind of micro electromechanical structure preparation method of improvement is being provided, and the method does not need to use viscose glue, can, in conjunction with the structure of the structure of sensor side and accommodation space, form complete micro electromechanical structure.
Object of the present invention is also providing one not need to use viscose glue, can, in conjunction with the structure of the structure of sensor side and accommodation space, form the method for containing fluid micro electromechanical structure, thereby simplify technique, reduces costs.
The present invention's object is also providing a kind of micro electromechanical structure preparation method of novelty, the method can prevent that fluid from leaking in structure fabrication process.
A kind of micro electromechanical structure preparation method, comprises the following steps:
On first substrate, make micro electromechanical structure;
On described first substrate, make dividing plate, to form the accommodation space that comprises described micro electromechanical structure;
In described accommodation space, inject fluid;
Cover described accommodation space with second substrate;
The assembly that described first substrate and second substrate form that overturns, is positioned at below described flow surface the contact-making surface of described dividing plate and second substrate;
To described first substrate and the pressurization of described second substrate, make described contact-making surface form welding.
A kind of micro electromechanical structure preparation method, comprises the following steps:
On first substrate, make micro electromechanical structure;
On second substrate, make dividing plate, to form accommodation space;
In described micro electromechanical structure or in described accommodation space, inject fluid;
Described first substrate is aimed at and engaged with described second substrate, make described accommodation space comprise described micro electromechanical structure;
The assembly that described in selective tilting, first substrate and described second substrate form, makes the contact-making surface of described dividing plate and described first substrate be positioned at described flow surface below;
To described first substrate and second substrate pressurization, make described contact-making surface form welding.
Wherein, on this first substrate, can form circuit structure, be connected with this micro electromechanical structure.Wherein, this micro electromechanical structure can be sensor structure, and this circuit structure can be sensor circuit structure.
In preferred embodiment of the present invention, this dividing plate can use any material that maintains this accommodation space internal pressure, wherein taking the photoresist that used in semiconductor technology as good.This second substrate can be silicon, glass, metal, metal oxide, plastic cement, rubber, resin or its combination.In this accommodation space, can separately form lubricating layer, the material of this lubricating layer can be any interfacial agent, and taking Teflon as good.
Be useful in fluid of the present invention, can be any fluid that is useful in micro electronmechanical making and application.This fluid is liquid or thick substances normally.This fluid can be conducting fluid or dielectric fluid.In example of the present invention, this fluid is silicone oil.
Be useful in the pressure of engagement step of the present invention, can be according to the kind of this fluid, composition, the material of the material of this dividing plate and this contact-making surface place material layer determines.
Brief description of the drawings
Fig. 1 illustrates and uses the liquid capacitance-type of the inventive method made micro-sensor that tilts.
Fig. 2 illustrates the flow chart of micro electromechanical structure preparation method the first embodiment of the present invention.
Fig. 3 illustrates the tilt schematic diagram of micro-sensor manufacturing process of liquid capacitance-type of the present invention.
Fig. 4 illustrates the flow chart of micro electromechanical structure preparation method the second embodiment of the present invention.
Symbol description
10 first substrates
11a, 11b, 11c, 11d dielectric layer
12a, 12b, 12c, 12d metal level
13a, 13b, 13c via
15 lubricating layers
24 supporting constructions
25 dividing plates
26 second substrates
27 accommodation spaces
28 Covering Liguids
30 reading circuits
28 Covering Liguids
Detailed description of the invention
Below will structure of the present invention and method for making be described with embodiment.Only it should be noted that: the embodiment using only illustrates possibility of the present invention or preferred embodiment, must not be in order to limit the scope of the invention.
Micro electromechanical structure preparation method of the present invention can be useful in any micro electromechanical structure that comprises fluid.This micro electromechanical structure can be a kind of sensor, and this fluid can be a kind of liquid.Applicable micro electromechanical structure comprises and uses the liquid capacitance-type of liquid sense tilt angle micro-sensor that tilts.Therefore, the following description will tilt micro-sensor as example taking this liquid capacitance-type, and the embodiment of micro electromechanical structure preparation method of the present invention is described.
Fig. 1 represents to use the liquid capacitance-type of the inventive method made micro-sensor that tilts.As shown in the figure, this liquid capacitance-type micro-sensor 100 that tilts, is formed on first substrate 10.Shown substrate 10 in figure, is the substrate using in the middle of standard CMOS process, i.e. silica substrate.On this substrate 10, form multilayer dielectric layer 11a, 11b, 11c, 11d with standard CMOS process, multiple layer metal layer 12a, 12b, 12c, 12d, and multiple via 13a, 13b, 13c etc.
This sensor 100 has pair of differential electrode.In the sensor structure shown in Fig. 1, these three electrodes (not shown) are formed on same metal level jointly, on three-layer metal layer 12c.Around these three electrode regions, form supporting construction 24 with multilayer dielectric layer, multiple layer metal layer and multiple via.Above this supporting construction 24, form dividing plate 25, dividing plate 25 tops cover second substrate 26, make metal level, this supporting construction 24, the dividing plate 25 at these three electrode places define accommodation space 27 with second substrate 26.Covering Liguid 28 is sealed in this accommodation space 27.
In preferred embodiment of the present invention, this dividing plate 25 is to use photoresist to make, and this second substrate 26 is glass materials.But the present invention's material applicatory is not limited to shown in this example.
In this example, these three electrodes are formed in single metal level, but in other examples, these three electrodes are formed in most metal levels.Also, in standard CMOS process, form, centre accompanies multiple metal levels of dielectric layer.
For suppressing this Covering Liguid 28 because capillarity sticks to this three electrode surfaces, can impose lubricating layer (not shown) in these three whole or selected parts of electrode surface.The material of this lubricating layer is well known to those skilled in the art, for example, can be Teflon.
There is the angle of inclination detector of above feature, can utilize standard CMOS process to make, therefore can be produced in same substrate with reading circuit, and complete simultaneously.Be enough to simplify and produce and reduce costs.In addition, and can solve prior art detector and reading circuit and be difficult for a difficult problem of integrating.
Below with the tilt preparation method of micro-sensor of example explanation liquid capacitance-type of the present invention.Fig. 2 shows the flow chart of micro electromechanical structure preparation method the first embodiment of the present invention.Fig. 3 shows liquid capacitance-type of the present invention micro-sensor manufacturing process schematic diagram that tilts.As shown in Figure 2, the present embodiment, in the time making micro electromechanical structure, is first made first substrate 10 in step 201.The material of this first substrate 10 is not limited to them, but typically can use the substrate material that is generally applied in standard CMOS process, i.e. silica substrate.To make this micro electromechanical structure can utilize CMOS technique to make.But use other firm materials, or other applicable materials that use in CMOS technique, identical effect also can be obtained.
Secondly, on this first substrate 10, form material layer in 202.This material layer may comprise: the dielectric layer 11a that is formed on these substrate 10 tops, be formed on this dielectric layer 11a top, multiple layer metal layer 12a, 12b, 12c, 12d and dielectric layer 11b, 11c, 11d alternate with each other, and position via 13a, 13b, 13c therein.In the middle of these material layers, comprise inclination angle sensor 100 and reading circuit 30.The method that is applicable to making this material layer, comprises any commercial technique that is used for forming circuit structure and/or microstructure, and wherein suitable is the CMOS technique of standard.
This reading circuit 30 can be the circuit structure completing with commercial circuit designs instrument, for example, be the prepared multilayer circuit layer of CMOS technique.Be used for detecting capacitance and this capacitance be transformed into the circuit of angle of inclination value, can use the circuit design of any prior art.For the expert of the industry, design has the circuit of above-mentioned functions, and be formed on this first substrate 10 with the technique being suitable for, should be apparent, at this without repeating correlation technique details.
As for the making of these detector 100 parts, be to be formed at least one central metal level of this material layer, for example three-layer metal layer 12c in this example.Its preparation method is included in and forms after this metal level 12c, with methods such as etchings, forms applicable electrode.Form battery lead plate pattern at this three-layer metal layer 12c, belong to prior art.In addition, on same level or essence same level, form multipair differential electrode, also can utilize known technology to reach.The industry personage read this case patent specification and graphic after, when still completing easily.Correlation technique details, does not also repeat at this.
In this material layer, also can comprise with the common supporting construction 24 forming of multiple layer metal layer, multilayer dielectric layer and multiple via.This supporting construction 24 normally runs through multilayer dielectric layer and metal level with via, to improve its intensity.So complete the structure that is enough to support the accommodation space that will form.Make the technology of this kind of supporting construction, also can use above-mentioned CMOS technique, complete in same process step with this reading circuit and battery lead plate.Correlation technique details, also there is no need to go into details.The structure completing as shown in Figure 3A.
Secondly, the dielectric layer above step 203 removes this battery lead plate, until battery lead plate comes out.Acquired results as shown in Figure 3 B.In step 204, apply lubricating layer 15 at this electrode plate surface.The material of this lubricating layer 15 can be anyly can eliminate or reduce the capillary material of this electrode plate surface.In preferred embodiment of the present invention, be to adopt Teflon.Certainly, other can provide the material of identical or similar functions, all applicable.Its applying method is also without any technical restriction, but to revolve die coating method, comparatively feasible, effect might as well.These lubricating layer 15 thickness are also unrestricted, but should not be too thick, in order to avoid impact detecting effect.The material layer forming as shown in Figure 3 C.
Then, in step 205, above this material layer, form dividing plate 25, to form the accommodation space 27 that comprises these detector 100 parts above this material layer.In the time forming this accommodation space 27, first above this material layer, form layers of separator material.The material of this layers of separator material is not limited to them.But considering technique facility, in preferred embodiment of the present invention, is to make with photoresist.Applicable photoresist comprises SU-8 etc.This layers of separator material 25 can be formed on the material layer of this first substrate by any way, and its thickness is also without any restrictions, but can form enough volumes, is advisable to hold Covering Liguid.Typically, approximately can be between 100 to 2,000um, preferably between 200 to 1,000um.Secondly, at the interior formation accommodation space 27 of this layers of separator material 25, to be used for holding the chamber of Covering Liguid.The method that forms accommodation space 27, is mainly to remove this lattice sheet material bed of material some, for example, form with engraving method.But otherwise, the technology such as such as burn off, also non-the taboo.If necessary, can separately form line of cut (not shown).Material layer after formation comprises this first substrate 10, this detector 100 parts, and this reading circuit 30, and define the dividing plate 25 of this accommodation space 27.As shown in Figure 3 D.
Then, in step 206 at the interior injection Covering Liguid 28 of this accommodation space 27.This Covering Liguid 28 can be conductive liquid or dielectric fluid.If conductive material, can be electrolyte, magnetic liquid, liquid metal, containing materials such as the liquid of nano-metal particle.If dielectric fluid, material higher with proportion and that viscosity is lower is more applicable, and for example silicone oil is its suitable example.Covering Liguid 28 amounts that add are not limited to them, but are advisable with the half left and right that is full of these accommodation space 27 volumes.
In step 207, second substrate 26 covered formed material layer on, thereafter.The material of this second substrate 26 is not limited to them, but with hard, be easily processed as suitable.In preferred embodiment of the present invention, this second substrate 26 is glass substrate.But other materials, for example plastic cement, resin, glass fibre, metal, pottery or its composite, all applicable.This first substrate 10(and material layer thereof overturn in step 208) assembly that forms with second substrate 26, dividing plate 25 and the contact-making surface of second substrate 26 are positioned at below the liquid level of this Covering Liguid 28.Optionally use tool in this step, make the unlikely contact-making surface leakage with second substrate 26 from this dividing plate 25 of this Covering Liguid 28.This Covering Liguid 28 is maintained to the method in this accommodation space 27, can use any known method, while being included in upset, clamp this first substrate 10 and this second substrate 26.
At step 209 pressurization this first substrate 10 and this second substrate 26, make this contact-making surface form welding, make two surperficial sets., if necessary, can in step 210 heat, make this welding annealing thereafter.The heating-up temperature of this annealing steps, holding time can depend on the needs with number of times.
Though wish is not limited by any theory, inventor finds, negative photoresist particularly suitable is as dividing plate 25 of the present invention.Push away its reason, may in the time exposing, can make photoresistance interior molecules structure generation interlinkage because bear photoresist, and then make it structure-reinforced.And the structure that will make it produce interlinkage in the process of heating is more firm.In other words,, carrying out in the process of pressurized, heated, produce bonding strength by reaction and the element surface of the interlinkage of photoresistance own.Through experimental result, the negative photoresist of PerMX dry film SU-8 that E.I.Du Pont Company is acted on behalf of, the adhesion characteristic particularly suitable providing is in the present invention.
The micro electromechanical structure forming through above-mentioned steps, as shown in Fig. 3 E.
In another embodiment of the present invention, this dividing plate 25 is to be first produced on this second substrate 26.This kind of method equally also can obtain applicable micro electromechanical structure.Fig. 4 represents the flow chart of micro electromechanical structure preparation method the second embodiment of the present invention.
As shown in the figure, in step 401, make first substrate 10.Secondly, in step 402, on this first substrate 10, form material layer.This material layer comprises: the dielectric layer 11a that is formed on these substrate 10 tops, be formed on this dielectric layer 11a top, multiple layer metal layer 12a, 12b, 12c, 12d and dielectric layer 11b, 11c, 11d alternate with each other, and position via 13a, 13b, 13c therein.This material layer can comprise detector 100 parts and reading circuit 30 parts.Secondly, in step 403, remove the dielectric layer above this battery lead plate, until battery lead plate comes out.In step 404, apply lubricating layer 15 at this electrode plate surface.
Then, in step 405, on second substrate 26, form layers of separator material 25.Material, the thickness of this layers of separator material are identical with the first embodiment.Secondly, in step 406 at the interior formation accommodation space 27 of this layers of separator material 25, to be used for holding the chamber of Covering Liguid 28.The method that forms accommodation space 27 is also identical with the first embodiment.If necessary, can separately form line of cut (not shown).
, in step 407, Covering Liguid 28 injected the expose portion of this first substrate 10 material layers in thereafter, or in the accommodation space 27 of this second substrate 26.Covering Liguid 28 amounts that add are not limited to them, but with after processing, be advisable in the half left and right that can be full of these accommodation space 27 volumes.In step 408, this second substrate 26 is covered on the material layer of this first substrate 10 (in step 207, being when liquid 28 is injected in the expose portion of these first substrate 10 material layers) maybe by the layer of material covers of this this first substrate 10 on second substrate 26 (being that liquid 28 is injected to the accommodation space 27 of these second substrate 10 material layers when interior in step 207), make the expose portion of first substrate 10 material layers in the face of this accommodation space 27, and make material layer and the common definition confined space of this accommodation space 27 of this first substrate 10.
Then, this first substrate 10(and material layer thereof optionally overturn in step 409) assembly that forms with second substrate 26, dividing plate 25 and the contact-making surface of first substrate 10 material layers are positioned at below the liquid level of this Covering Liguid 28.In other words, be positioned at below the liquid level of this Covering Liguid 28 as the result in step 408 has made this contact-making surface, must not overturn.Optionally use tool in this step, make the unlikely contact-making surface leakage with first substrate 10 from this dividing plate 25 of this Covering Liguid 28.
In step 410, pressurize this first substrate 10 and this second substrate 26, make this contact-making surface form welding.Its method and reaction condition, parameter etc. are all identical with the first embodiment.If necessary, can heat in step 411, make this welding annealing.So, complete micro electromechanical structure of the present invention, as shown in Fig. 3 E.
In above-mentioned example, applicable fluid can be any fluid that is useful in micro electronmechanical making and application.This fluid is liquid or thick substances normally.This fluid can be conducting fluid or dielectric fluid.In example of the present invention, this fluid is silicone oil.
Not only step is simple for disclosed micro electromechanical structure preparation method, easily make, and can save the cost of sticker, and avoid Covering Liguid be in work, leak in preserving, transport and using.
Claims (15)
1. a micro electromechanical structure preparation method, comprises the following steps:
On first substrate, make micro electromechanical structure;
On described first substrate, make dividing plate, to form the accommodation space that holds described micro electromechanical structure;
In described accommodation space, inject fluid;
Cover described accommodation space with second substrate;
The assembly that described first substrate and described second substrate form that overturns, is positioned at below described flow surface the contact-making surface of described dividing plate and described second substrate; And
To described first substrate and the pressurization of described second substrate, make described contact-making surface form welding.
2. a micro electromechanical structure preparation method, comprises the following steps:
On first substrate, make micro electromechanical structure;
On second substrate, make dividing plate, to form accommodation space;
In described micro electromechanical structure or in described accommodation space, inject fluid;
Described first substrate is aimed at and engaged with described second substrate, make described accommodation space hold described micro electromechanical structure;
The assembly that described in selective tilting, first substrate and described second substrate form, makes the contact-making surface of described dividing plate and described first substrate be positioned at described flow surface below; And
To described first substrate and the pressurization of described second substrate, make described contact-making surface form welding.
3. method as claimed in claim 1 or 2, also comprises: the step that makes described welding annealing.
4. method as claimed in claim 1 or 2 wherein, forms circuit structure on described first substrate, and this circuit structure is connected with described micro electromechanical structure.
5. method as claimed in claim 4, wherein, described micro electromechanical structure is sensor structure, and described circuit structure is sensor circuit structure.
6. method as claimed in claim 1 or 2, wherein, described dividing plate comprises the photoresist using in semiconductor technology.
7. method as claimed in claim 6, wherein, described dividing plate comprises negative photoresist.
8. method as claimed in claim 1 or 2, wherein, described second substrate is at least one being selected from these materials of silicon, glass, metal, metal oxide, plastic cement, rubber and resin.
9. method as claimed in claim 1 or 2, also comprises: the step that forms lubricating layer in described accommodation space.
10. method as claimed in claim 9, wherein, the material of described lubricating layer is Teflon.
11. methods as claimed in claim 1 or 2, wherein, described fluid is liquid.
12. methods as claimed in claim 11, wherein, described fluid is conductive liquid.
13. methods as claimed in claim 11, wherein, described fluid is dielectricity liquid.
14. methods as claimed in claim 11, wherein, described fluid is silicone oil.
15. 1 kinds of micro electromechanical structures with any one method making in claim 1 to 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310087534.8A CN104058366B (en) | 2013-03-19 | 2013-03-19 | Fabrication method of microelectromechanical structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310087534.8A CN104058366B (en) | 2013-03-19 | 2013-03-19 | Fabrication method of microelectromechanical structure |
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| CN104058366A true CN104058366A (en) | 2014-09-24 |
| CN104058366B CN104058366B (en) | 2016-05-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112930106A (en) * | 2021-01-22 | 2021-06-08 | 杭州唯灵医疗科技有限公司 | Flexible electronic equipment and assembling method thereof |
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| JPH10253354A (en) * | 1997-03-06 | 1998-09-25 | Nikko Ind Corp | Level |
| CN1384337A (en) * | 2002-05-17 | 2002-12-11 | 扬州威凯莱光电仪器有限公司 | Electronic horizon sensor |
| US20030110652A1 (en) * | 2001-12-13 | 2003-06-19 | Greway Charles E. | Electrolytic tilt-sensor |
| CN2567546Y (en) * | 2002-08-23 | 2003-08-20 | 上海衡盛科技有限公司 | Impedance biaxial inclination sensor |
| CN1668892A (en) * | 2002-06-20 | 2005-09-14 | 株式会社生方制作所 | Electrostatic capacity type liquid sensor |
| JP2008116416A (en) * | 2006-11-08 | 2008-05-22 | Keio Gijuku | Tilt sensor and tilt switch |
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2013
- 2013-03-19 CN CN201310087534.8A patent/CN104058366B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10253354A (en) * | 1997-03-06 | 1998-09-25 | Nikko Ind Corp | Level |
| US20030110652A1 (en) * | 2001-12-13 | 2003-06-19 | Greway Charles E. | Electrolytic tilt-sensor |
| CN1384337A (en) * | 2002-05-17 | 2002-12-11 | 扬州威凯莱光电仪器有限公司 | Electronic horizon sensor |
| CN1668892A (en) * | 2002-06-20 | 2005-09-14 | 株式会社生方制作所 | Electrostatic capacity type liquid sensor |
| CN2567546Y (en) * | 2002-08-23 | 2003-08-20 | 上海衡盛科技有限公司 | Impedance biaxial inclination sensor |
| JP2008116416A (en) * | 2006-11-08 | 2008-05-22 | Keio Gijuku | Tilt sensor and tilt switch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112930106A (en) * | 2021-01-22 | 2021-06-08 | 杭州唯灵医疗科技有限公司 | Flexible electronic equipment and assembling method thereof |
| CN112930106B (en) * | 2021-01-22 | 2022-11-22 | 杭州唯灵医疗科技有限公司 | Flexible electronic device and assembling method thereof |
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| Publication number | Publication date |
|---|---|
| CN104058366B (en) | 2016-05-18 |
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