CN104003346B - A kind of membrane structure, pressure sensor and electronic device - Google Patents
A kind of membrane structure, pressure sensor and electronic device Download PDFInfo
- Publication number
- CN104003346B CN104003346B CN201310058108.1A CN201310058108A CN104003346B CN 104003346 B CN104003346 B CN 104003346B CN 201310058108 A CN201310058108 A CN 201310058108A CN 104003346 B CN104003346 B CN 104003346B
- Authority
- CN
- China
- Prior art keywords
- layer
- pressure sensor
- membrane structure
- film
- conducting membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention provides a kind of membrane structure, pressure sensor and electronic device, is related to technical field of semiconductors.Membrane structure of the invention, the main structure layer including at least two-layer laminate, and the layer to layer transition layer between the adjacent main structure layer；Wherein, the material of the main structure layer is conductive material, and the material of the layer to layer transition layer is amorphous compound.Pressure sensor of the invention comprising above-mentioned membrane structure.Electronic device of the invention, including above-mentioned pressure sensor.Compared with the existing technology, membrane structure of the invention has better stress performance, better surface smoothness and smaller strain gradient.Pressure sensor of the invention has used the membrane structure, has better susceptibility and reliability.Electronic device of the invention due to having used above-mentioned pressure sensor, thus also has better sensitivity and reliability.
Description
Technical field
The present invention relates to technical field of semiconductors, fill in particular to a kind of membrane structure, pressure sensor and electronics
It sets.
Background technique
In the prior art, the structure of traditional capacitor type semiconductor pressure sensor is as shown in Figure 1, comprising: substrate 1,
Positioned at the fixation electrode 5 of substrate, and positioned at the top of substrate 1 and fixed electrode 5 can that deformation occurs be conductive thin
Film 2.Film 2 is fixed on substrate 1 by support construction 3, is formed with closed cavity 4 between film 2 and fixed electrode 5.
Film 2 and fixed electrode 5 form a capacity plate antenna, and lower electrode of the fixed electrode 5 as capacity plate antenna, film 2 is as plate electricity
The top electrode of appearance.Also, pressure sensor also typically includes, and thin film transistor (TFT) (TFT) control circuit 6 is generally positioned at lining
It is connected on bottom 1 and with capacity plate antenna.In the prior art, film 2 is usually the monofilm of germanium silicon material composition.
In the following, the working principle for briefly introducing pressure sensor shown in FIG. 1 is as follows.When there is pressure to be applied to film 2
When (that is, top electrode of pressure sensor) or the pressure being applied on film 2 change, film 2 will deformation occurs, puts down
The capacitor of plate capacitor will change simultaneously therewith.Therefore, the capacitance variations of capacity plate antenna can be detected by control circuit 6,
To learn the variation of pressure suffered by pressure sensor.
In industry application, the susceptibility and reliability of pressure sensor are vital factors.And pressure sensor
Susceptibility and reliability, depend primarily on stress performance, strain gradient and the surface smoothness of the film 2 as top electrode.
Currently, using the pressure sensor of MEMS (MEMS) technology production due to, system high with detection sensitivity
This low advantage is caused, quick development has been obtained.However, in practical application to pressure sensor (for example, inertia sensing
Device) the requirement of performance constantly improve, the film 2 as pressure sensor top electrode used in the prior art has been difficult to
Meet actual needs.
In the prior art, film 2 is the monofilm of germanium silicon material composition, and thickness is about 2um.It often exists such as
Lower problem: (1) when manufacture film, although the stress performance that can have been obtained by Optimizing Process Parameters, while can lead
It causes the surface of film more coarse, reduces the surface smoothness of film.And the reduction of surface smoothness, necessarily cause certain
The susceptibility of pressure sensor is reduced in degree.Wherein, Fig. 2 shows in the prior art in the technological parameter of optimization thin film fabrication
The situation of change of the surface smoothness of film obtained afterwards, Fig. 2A and 2B are the SEM figure of film obtained after Optimal Parameters, figure
2A shows the SEM figure of the cross-section structure of film obtained after Optimizing Process Parameters, and Fig. 2 B makes after showing Optimizing Process Parameters
The SEM figure on the surface of the film obtained.(2) for meet need film, stress objective value be 0MPa, but allow fluctuation model
It is trapped among within ± 50MPa.The thickness of film in the prior art and the corresponding relationship curve of stress are as shown in Figure 3.As it can be seen that existing
The stress performance of film in technology is unsatisfactory.(3) film in the prior art (that is, monofilm of germanium silicon material composition)
Strain gradient is generally bigger.
Therefore, to solve the above problems, it is necessary to propose a kind of new membrane structure.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of film, pressure sensor and electronic device.
The present invention provides a kind of membrane structure comprising at least main structure layer of two-layer laminate, and positioned at adjacent
Layer to layer transition layer between the main structure layer；Wherein, the material of the main structure layer is conductive material, the interlayer mistake
The material for crossing layer is amorphous compound.
Further, the material of the main structure layer can be germanium silicon.
Wherein, the material of the layer to layer transition layer can be silica.
Wherein, the number of plies of the main structure layer of at least two-layer laminate is preferably 2 ~ 10.It is furthermore preferred that the number of plies is 2 ~ 5.
Wherein, the main structure layer with a thickness ofPreferably, main structure layer with a thickness of
Wherein, the layer to layer transition layer with a thickness ofPreferably, layer to layer transition layer with a thickness of
Wherein, the film is to be prepared by furnace process.
The present invention provides a kind of pressure sensor comprising membrane structure described in any of the above embodiments.
Wherein, the pressure sensor is capacitor type semiconductor pressure sensor.
The present invention also provides a kind of electronic devices comprising pressure sensor as described above.
Compared with the existing technology, membrane structure of the invention have better stress performance, better surface smoothness, with
And smaller strain gradient.Pressure sensor of the invention has used the membrane structure, with better susceptibility and reliably
Property.Electronic device of the invention due to having used above-mentioned pressure sensor, thus also has better sensitivity and reliability.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 is the schematic cross sectional view of the structure of capacitor type semiconductor pressure sensor in the prior art；
Fig. 2 is the surface smoothness situation schematic diagram of film obtained after Optimizing Process Parameters in the prior art, wherein figure
2A shows the SEM figure of the cross-section structure of film obtained after Optimizing Process Parameters, and Fig. 2 B makes after showing Optimizing Process Parameters
The SEM figure on the surface of the film obtained；
Fig. 3 is the schematic diagram of the relationship between the thickness and stress of film in the prior art；
Fig. 4 is the schematic diagram of membrane structure of the invention；
Fig. 5 is the surface smoothness situation schematic diagram of film of the invention；Wherein, Fig. 5 A cuts open for the film one is exemplary
The SEM of face structure schemes, and Fig. 5 B is the SEM figure on the surface of the example film；
Fig. 6 is the schematic diagram of the relationship between the thickness and stress of film of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.Be also to be understood that term " composition " and/or " comprising ", when in the specifications in use, determining the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
Unless otherwise defined, all terms (including technical and scientific term) as used herein have and field of the present invention
The normally understood identical meaning of those of ordinary skill institute.It will also be understood that term defined in such as commonly used dictionary
It should be understood as having and their consistent meanings of meaning in the environment of related fields and/or this specification, and cannot be
It is explained in the sense that ideal or excessively formal, unless expressly definition so here.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate film, pressure sensor and electronic device proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however
Other than these detailed descriptions, the present invention can also have other embodiments.
In the following, describing the exemplary structure of the film of proposition of the embodiment of the present invention referring to fig. 4 to fig. 6.Wherein, Fig. 4 is
The structural schematic diagram of film of the invention；Fig. 5 is the surface smoothness situation schematic diagram of film of the invention, wherein Fig. 5 A is
The SEM of one exemplary cross-section structure of the film schemes, and Fig. 5 B is the SEM figure on the surface of the example film；Fig. 6 is of the invention thin
The schematic diagram of relationship between the thickness and stress of film.
The embodiment of the present invention provides a kind of membrane structure (abbreviation film), the film be mainly used for pressure sensor (for example,
Capacitor type semiconductor pressure sensor), the top electrode as pressure sensor.
The film of the embodiment of the present invention, the main structure layer including at least two-layer laminate, and positioned at adjacent main body knot
Layer to layer transition layer between structure layer, wherein the material of main structure layer is conductive material, preferably germanium silicon (SiGe) film.Layer
Between the material of transition zone be amorphous compound, preferably silica.
Fig. 4 A shows an example of the film of the embodiment of the present invention, which includes two layers of main structure layer of stacking
401 and positioned at the layer to layer transition layer 402 between them.
Fig. 4 B shows another example of the film of the embodiment of the present invention, which includes three layer main body structures of stacking
Two layer to layer transition layers 402 between layer 401 and adjacent main structure layer.
It in embodiments of the present invention, can according to actual needs, to the quantity of the main structure layer in each membrane structure
It is set.Under the premise of guaranteeing globality, to achieve the purpose that reduce stress gradient.Preferably, the number of main structure layer
Amount is 2 ~ 10.At this point it is possible in the case where guaranteeing that membrane structure has lesser crystallite dimension and preferable surface smoothness,
Save the process time.If the number of plies is excessive, although can better proof stress gradient, also imply that globality can be worse,
It is bigger that damaged risk is divided after duplicate mechanical movement., can be better although globality is opposite if the number of plies is very few, it adjusts
The ability of solution control integral gradient can be relatively poor.It is furthermore preferred that the quantity of main structure layer is 2 ~ 5.
Wherein, depending on the thickness of main structure layer needs to be designed according to practical devices, generally, main structure layer
With a thickness ofIt is preferred that using germanium silicon as main structure layer.Preferably, main structure layer with a thickness of
Wherein, layer to layer transition layer with a thickness ofIn order to guarantee the electric conductivity of film entirety, layer to layer transition layer
This thickness cannot be too thick, otherwise can insulate, while also will affect the globality of film.Preferably, the thickness of layer to layer transition layer
For
The film of the embodiment of the present invention can be prepared, i.e., each layer main body using furnace process (furnace process)
The formation of structure sheaf is all made of furnace process.Preferably, of the invention real when selecting germanium silicon material to prepare as main structure layer
When applying the film of example, using low pressure, low temperature, low gas flow and high germanium component.
The film of the embodiment of the present invention, since monofilm in the prior art to be passed through to the lamination knot of multi-layer body structure sheaf
The form of structure is realized, can preferably adjust the microstructure (that is, being balanced the microstructure of crystal grain) of crystal grain, is limited
The mean size of crystallite dimension, so that film has better surface smoothness.Illustratively, Fig. 5 B shows of the invention thin
The schematic diagram (SEM figure) of the surface smoothness situation of film (the case where main structure layer is 3 layers), with the prior art (Fig. 2 B) phase
Than, it is clear that the crystallite dimension of the film of the embodiment of the present invention is smaller, and surface smoothness is more preferable.
Simultaneously as the microstructure of crystal grain is balanced, it can make film that there is better strain gradient uniformity,
And strain gradient is reduced.
Fig. 6 is the signal of the relationship between the thickness and stress of film (the case where main structure layer is 3 layers) of the invention
Figure.Obviously, the stress performance relative to the film of Fig. 3 embodiment of the present invention is more excellent.
Fig. 5 and Fig. 6 show, the membrane structure of the embodiment of the present invention can obtain smaller crystallite dimension and more unified
Stress distribution.Us are tested it can be found that the strain gradient of the film of this structure is about 2 × 10-4μm-1.With existing skill
Monofilm in art is compared, and the absolute value of the strain gradient of the film of this laminated construction is smaller.Also, with the increase of the number of plies
(that is, increase that main structure counts layer by layer) can obtain better crystallite dimension and more unified stress distribution.
In short, film of the invention is compared with the existing technology, there is better stress performance, better surfacing
Degree and smaller strain gradient.Therefore, when this film being applied to pressure sensor, pressure sensor will be effectively improved
Susceptibility and reliability.It will be understood to those skilled in the art that the film of the embodiment of the present invention, also can be applied to other
The occasion of conductive film is needed, and is not limited to capacitance pressure transducer,.
The embodiment of the present invention also provides a kind of pressure sensor, which has used above-mentioned film.The present invention
The pressure sensor of embodiment, however it is not limited to which capacitance pressure transducer, can be the arbitrary form for having used above-mentioned film
Pressure sensor, such as resistive pressure sensor.Preferably, which is capacitor type semiconductor pressure sensor.
Electrode of the above-mentioned film as capacitor type semiconductor pressure sensor.The pressure sensor of the present embodiment, due to having used this
The above-mentioned film of embodiment, thus there is better susceptibility and reliability.
Further, the embodiment of the present invention also provides a kind of electronic device, which has used above-mentioned pressure to pass
Sensor.The electronic device of the present embodiment can be consumer electronics, water conservancy and hydropower, railway traffic, intelligent building, production automatic control, boat
Pass through the dress of electrical energy drive used in the various industries such as empty space flight, military project, petrochemical industry, oil well, electric power, ship, lathe, pipeline
It sets, all electronic devices for having used above-mentioned pressure sensor each fall within protection scope of the present invention.The electronics of the present embodiment
Device, since the pressure sensor that uses has better susceptibility and a reliability, thus its also have better sensitivity and
Reliability.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (13)
1. one kind can the conducting membrane structure that deformation occurs, which is characterized in that the main structure layer including at least two-layer laminate, institute
The material for stating main structure layer is conductive material, and the layer to layer transition layer between the adjacent main structure layer, institute
The material for stating layer to layer transition layer is amorphous compound, so that the conducting membrane structure is with better surface smoothness and more
Small strain gradient.
2. conducting membrane structure as described in claim 1, which is characterized in that the material of the main structure layer is germanium silicon.
3. conducting membrane structure as described in claim 1, which is characterized in that the material of the layer to layer transition layer is silica.
4. conducting membrane structure as described in any one of claims 1 to 3, which is characterized in that the master of at least two-layer laminate
The number of plies of body structure sheaf is 2~10.
5. conducting membrane structure as claimed in claim 4, which is characterized in that the main structure layer of at least two-layer laminate
The number of plies is 2~5.
6. conducting membrane structure as described in any one of claims 1 to 3, which is characterized in that the thickness of the main structure layer
For
7. conducting membrane structure as claimed in claim 6, which is characterized in that the main structure layer with a thickness of
8. conducting membrane structure as described in any one of claims 1 to 3, which is characterized in that the thickness of the layer to layer transition layer
For
9. conducting membrane structure as claimed in claim 8, which is characterized in that the layer to layer transition layer with a thickness of
10. conducting membrane structure as described in any one of claims 1 to 3, which is characterized in that the film passes through furnace process
Preparation.
11. a kind of pressure sensor, which is characterized in that including the described in any item conducting membrane structures of claims 1 to 10.
12. pressure sensor as claimed in claim 11, which is characterized in that the pressure sensor is condenser type semiconductor pressure
Force snesor.
13. a kind of electronic device, which is characterized in that including pressure sensor described in claim 11 or 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310058108.1A CN104003346B (en) | 2013-02-25 | 2013-02-25 | A kind of membrane structure, pressure sensor and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310058108.1A CN104003346B (en) | 2013-02-25 | 2013-02-25 | A kind of membrane structure, pressure sensor and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104003346A CN104003346A (en) | 2014-08-27 |
| CN104003346B true CN104003346B (en) | 2019-05-17 |
Family
ID=51364292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310058108.1A Active CN104003346B (en) | 2013-02-25 | 2013-02-25 | A kind of membrane structure, pressure sensor and electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104003346B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025043409A1 (en) * | 2023-08-25 | 2025-03-06 | 京东方科技集团股份有限公司 | Pressure sensor and pressure-sensitive panel |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1332478A (en) * | 2001-08-24 | 2002-01-23 | 中国科学院上海冶金研究所 | Multilayer silicon gallide material on insulating layer and its prepn |
| US6756285B1 (en) * | 1999-02-10 | 2004-06-29 | Commissariat A L'energie Atomique | Multilayer structure with controlled internal stresses and making same |
| CN1705766A (en) * | 2002-10-22 | 2005-12-07 | 旭硝子株式会社 | Substrate with multilayer film and method for producing same |
| CN1728332A (en) * | 2004-07-28 | 2006-02-01 | 胜华科技股份有限公司 | Heat-stable and low-resistance-ratio indium tin oxide film preparation method |
| CN101714415A (en) * | 2008-10-08 | 2010-05-26 | 胜华科技股份有限公司 | Conductive film structure |
| CN101866874A (en) * | 2010-06-01 | 2010-10-20 | 中国科学院上海微系统与信息技术研究所 | A method for preparing silicon germanium on insulator material by layer transfer technology |
| CN102128685A (en) * | 2010-11-22 | 2011-07-20 | 烟台睿创微纳技术有限公司 | Micro-mechanical CMOS (complementary metal oxide semiconductor) thermopile infrared temperature sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
| CN202735005U (en) * | 2012-05-31 | 2013-02-13 | 上海丽恒光微电子科技有限公司 | Pressure sensor, oscillator and ultrasonic sensor |
-
2013
- 2013-02-25 CN CN201310058108.1A patent/CN104003346B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756285B1 (en) * | 1999-02-10 | 2004-06-29 | Commissariat A L'energie Atomique | Multilayer structure with controlled internal stresses and making same |
| CN1332478A (en) * | 2001-08-24 | 2002-01-23 | 中国科学院上海冶金研究所 | Multilayer silicon gallide material on insulating layer and its prepn |
| CN1705766A (en) * | 2002-10-22 | 2005-12-07 | 旭硝子株式会社 | Substrate with multilayer film and method for producing same |
| CN1728332A (en) * | 2004-07-28 | 2006-02-01 | 胜华科技股份有限公司 | Heat-stable and low-resistance-ratio indium tin oxide film preparation method |
| CN101714415A (en) * | 2008-10-08 | 2010-05-26 | 胜华科技股份有限公司 | Conductive film structure |
| CN101866874A (en) * | 2010-06-01 | 2010-10-20 | 中国科学院上海微系统与信息技术研究所 | A method for preparing silicon germanium on insulator material by layer transfer technology |
| CN102128685A (en) * | 2010-11-22 | 2011-07-20 | 烟台睿创微纳技术有限公司 | Micro-mechanical CMOS (complementary metal oxide semiconductor) thermopile infrared temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104003346A (en) | 2014-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions | |
| CN103647018B (en) | A kind of Laminated PVDF actuator and main passive hybrid isolator | |
| JP2014081939A (en) | Touch panel and manufacturing method of touch panel | |
| CN102969304B (en) | Three-dimensional integrated micro-transformers | |
| CN102636762A (en) | Monolithic tri-axis amr sensor and manufacturing method thereof | |
| CN108548619B (en) | Method for improving sensitivity of piezoresistive sensor based on fragmented structure | |
| KR102348625B1 (en) | Method for fabricating a magnetoresistive device | |
| CN105932153B (en) | A kind of magnetism unusual hall transistors of room temperature lower piezoelectric regulation and control | |
| CN103434999A (en) | Integrated manufacturing method for capacitance type temperature, humidity, air pressure and acceleration sensors based on anodic bonding of SOI (silicon on insulator) sheet silicon substrate | |
| CN104003346B (en) | A kind of membrane structure, pressure sensor and electronic device | |
| CN102175363A (en) | Pressure-strain device and method fabricated by ion beam sputtering silicon thin film | |
| CN102928132B (en) | Tunnel reluctance pressure transducer | |
| CN105203251B (en) | Pressure sensing chip and its processing method | |
| WO2011009860A3 (en) | Thin-layer solar module having improved interconnection of solar cells and method for the production thereof | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof | |
| CN202582773U (en) | High sensitivity thin film miniature temperature sensor based on spin reorientation transition | |
| CN107167948B (en) | Display panel and display device | |
| CN206595298U (en) | Display board | |
| CN203461813U (en) | MEMS packaging structure | |
| CN206583459U (en) | Linear transducer | |
| CN105489978B (en) | The method of adjustment of distributed MEMS phase shifter operating voltage based on phase-shift phase mechanical-electric coupling | |
| CN103604534B (en) | Reinforced deflection capacitor type test structure for surface micro-machining residual stress | |
| CN203335841U (en) | High-performance sealing gasket | |
| CN106784281A (en) | A kind of thin film thermoelectric module | |
| CN207611064U (en) | A Layer Structure Quality and Acceleration Sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |