CN103985699A - Silver alloy wire - Google Patents
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- CN103985699A CN103985699A CN201310050878.1A CN201310050878A CN103985699A CN 103985699 A CN103985699 A CN 103985699A CN 201310050878 A CN201310050878 A CN 201310050878A CN 103985699 A CN103985699 A CN 103985699A
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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Abstract
Description
技术领域technical field
本发明涉及一种银合金线,特别是涉及一种以银为主要成分,并专为IC(integrated circuit,集成电路的简称)封装制程的连接导线的银合金线。The present invention relates to a silver alloy wire, in particular to a silver alloy wire with silver as the main component, which is specially used for connecting wires in IC (integrated circuit, short for integrated circuit) packaging process.
背景技术Background technique
随着半导体技术的进步,元件的尺寸不断的缩小,并逐渐进入深次微米的领域。当集成电路的积集度增加时,芯片的表面就无法提供足够的面积来制作需要的内连线,此时需要使用金属的连接线进行电路连接。但是金属的连接线与连接线之间会有电容,而金属连接线本身也会因为材料不同而产生不同大小的电阻率,因此,讯号在传递的过程中会因为电阻率及电容大小不同,而产生不同程度的延迟或降频。再加上半导体制程的进步,目前金属连接线制作的尺寸不但越来越细,彼此间的距离也越来越窄,因此,不但连接线的电阻越来越大,连接线之间的电容也会逐渐增高,因此,讯号传递速度将越来越慢。为了改善讯号传递延迟与降频的问题,目前用于半导体连接的合金导线将不可避免逐渐往低电阻率的方向发展。With the advancement of semiconductor technology, the size of components is constantly shrinking, and gradually enters the field of deep sub-micron. When the integration degree of the integrated circuit increases, the surface of the chip cannot provide enough area to make the required interconnection. At this time, it is necessary to use metal connection wires for circuit connection. However, there will be capacitance between the metal connecting wire and the connecting wire, and the metal connecting wire itself will have different resistivity due to different materials. Therefore, the signal will be different due to the different resistivity and capacitance during the transmission process. Produce varying degrees of latency or underclocking. Coupled with the progress of semiconductor manufacturing process, the size of the current metal connecting wires is not only getting smaller and smaller, but also the distance between each other is getting narrower and narrower. Therefore, not only the resistance of the connecting wires is getting larger, but also the capacitance between the connecting wires is also getting smaller Will gradually increase, therefore, the signal transmission speed will be slower and slower. In order to improve the problems of signal transmission delay and frequency reduction, the alloy wires currently used for semiconductor connection will inevitably gradually develop in the direction of low resistivity.
而从材料成本、电阻率、打线良率,以及可靠度等等方面来探讨以往的金属连接线,其大致可因为材料不同,而分为金线、银线、铜线及银合金线等等。其中,金线具有稳定性高、质地柔软、延展性佳、导电性佳、打线良率高、生产效率高以及线径微细化等等优良的物理性质,是一种理想的连接线材料,但由于近年来金价不断的攀高,故使用金线的材料成本已非客户乐于接受。From the perspective of material cost, resistivity, bonding yield, and reliability, etc., the previous metal connecting wires can be roughly divided into gold wires, silver wires, copper wires, and silver alloy wires due to different materials. wait. Among them, gold wire has excellent physical properties such as high stability, soft texture, good ductility, good electrical conductivity, high wire bonding yield, high production efficiency, and fine wire diameter. It is an ideal connecting wire material. However, due to the rising price of gold in recent years, the material cost of using gold wire is not acceptable to customers.
而铜线包括有单晶铜线及镀钯铜线两种,使用铜线的优点在于材料成本低廉,但缺点之一是硬度较高,容易击穿铝垫,使用时需要掌握较多的细节,工艺流程比较复杂,并非一般技术能力厂商所能轻易导入使用,之二是容易氧化,造成储存时需要密封,同时打线时需要使用例如氮氢气的保护气体,使用时具有一定的危险性。此外,因铜线的硬度较大,且铜线及镀钯铜线也会有产品可靠度的问题,在高压、高温或高湿的环境使用时可靠度相对金线不良,因此,无法使用在高品质的产品上。The copper wire includes single crystal copper wire and palladium-coated copper wire. The advantage of using copper wire is that the material cost is low, but one of the disadvantages is that it has high hardness and is easy to break through the aluminum pad. When using it, you need to master more details. , the process is relatively complicated, and it is not easy for manufacturers with general technical capabilities to introduce and use it. The second is that it is easy to oxidize, which requires sealing during storage. At the same time, protective gases such as nitrogen and hydrogen must be used during wiring, which is dangerous when used. In addition, due to the high hardness of copper wire, copper wire and palladium-coated copper wire also have product reliability problems. When used in high-pressure, high-temperature or high-humidity environments, the reliability is not as good as gold wire. Therefore, it cannot be used in High quality product on.
而使用银线的优点是储存时不需要真空包装,导线硬度较软,但是银线在打线过程中与铝制垫体接合时,在熔融焊球的界面会析出界金属化合物(简称IMC),而在可靠度测试环境下银铝扩散过于快速,使得界金属化合物厚度增加,而产生焊点断裂与产品失效。The advantage of using silver wire is that it does not need vacuum packaging during storage, and the hardness of the wire is relatively soft. However, when the silver wire is bonded to the aluminum pad during the wire bonding process, an interim metal compound (IMC for short) will be precipitated at the interface of the molten solder ball. , and in the reliability test environment, the diffusion of silver and aluminum is too fast, which increases the thickness of the intermetallic compound, resulting in solder joint fracture and product failure.
此外,中国台湾TWI373382B1发明专利提供一种复合金线,该复合金线包含8-30wt%的金、66-90wt%的银,以及0.01-6wt%的钯。此种复合金线是在金成分的基础中掺杂大量的银,以及抑制界金属化合物成长的钯。前述发明专利所公开的复合银线在任何封装形式都能替代金线及铜线,但缺点是仍然需要使用较高含量的金成分,故材料成本还是很高,此外,该复合金线中的钯及金的含量越高,其电阻率越高,对于讯号传递速度有不利的影响。In addition, the Chinese Taiwan TWI373382B1 invention patent provides a composite gold wire, which contains 8-30wt% gold, 66-90wt% silver, and 0.01-6wt% palladium. This kind of composite gold wire is based on the gold component doped with a large amount of silver and palladium that inhibits the growth of boundary metal compounds. The composite silver wire disclosed in the aforementioned invention patent can replace gold wire and copper wire in any packaging form, but the disadvantage is that it still needs to use a relatively high content of gold, so the material cost is still very high. In addition, the composite gold wire The higher the content of palladium and gold, the higher the resistivity, which has an adverse effect on the signal transmission speed.
而中国台湾TW201001652号发明专利也是公开一种以银为基底的合金导线,该合金导线中加入0.05-5wt%的选自于:铂(Pt)、钯(Pd)、铑(Rh)、锇(Os)与金(Au)族群的第一添加剂,以及3ppm-100ppm选自于:铍(Be)、钙(Ca)、钡(Ba)、镧(La)、铈(Ce)与钇(Y)族群的第二添加剂。此外,US6,723,281B1也是公开一种以银为基底,并加入0.1-3wt%的钯,以及0.1-3wt%的至少一种选自于:铝(Al)、铜(Cu)、铬(Cr)、钛(Ti)及钴(Co)族群的元素。前述发明专利都是公开一种以银为基底的连接线,所述复合银线都搭配两种选自于不同族群的添加剂,目的都是采用材料成本较低的银成分来取代金成分,并使复合银线具有较佳的物理性质。And Chinese Taiwan No. TW201001652 patent of invention also discloses a kind of alloy wire with silver as the base, adds 0.05-5wt% in this alloy wire and is selected from: platinum (Pt), palladium (Pd), rhodium (Rh), osmium ( Os) and the first additive of the gold (Au) group, and 3ppm-100ppm selected from: beryllium (Be), calcium (Ca), barium (Ba), lanthanum (La), cerium (Ce) and yttrium (Y) The second additive of the group. In addition, US6,723,281B1 also discloses a silver-based substrate, and adds 0.1-3wt% of palladium, and 0.1-3wt% of at least one selected from: aluminum (Al), copper (Cu), chromium (Cr ), titanium (Ti) and cobalt (Co) group elements. The aforementioned invention patents all disclose a silver-based connecting wire, and the composite silver wire is equipped with two kinds of additives selected from different groups. Make the composite silver wire have better physical properties.
然而,钯的含量越高,复合银线的电阻率越高,此外,钯含量低则该复合银线在高温、高压或高湿的环境中,容易和铝制垫体产生过厚与生成相不良的界金属化合物,故其性能可靠度低。虽然前述专利加入选自于第二种族群的元素,但以铜为例,由于铜有容易氧化的问题,线材生产过程中的制造成本与打线使用过程中的技术门坎相对高。However, the higher the palladium content, the higher the resistivity of the composite silver wire. In addition, if the palladium content is low, the composite silver wire is likely to be too thick and form phases with the aluminum pad in a high-temperature, high-pressure or high-humidity environment. Poor boundary metal compounds, so its performance reliability is low. Although the aforementioned patents add elements selected from the second ethnic group, taking copper as an example, due to the problem of easy oxidation of copper, the manufacturing cost in the wire production process and the technical threshold in the wire bonding process are relatively high.
附带说明的是,中国台湾TW201001652号发明专利以及US6,723,281B1的说明书中虽然都曾提到,在复合银线中可选择添加镍金属,但是前述专利前案的说明书及实施例,从未探讨镍金属在复合银线所扮演的角色,也从未教示镍金属、钯金属及银的比例与各项物性之间的关系。本发明主要针对含有钯的银合金线作改良,以期提供一种可以在降低材料成本的前提下,有效降低电阻率,并维持优良的性能可靠度及打线良率的银合金线。It should be noted that although both the invention patent No. TW201001652 of Taiwan, China and the description of US6,723,281B1 have mentioned that nickel metal can be optionally added to the composite silver wire, the description and examples of the aforementioned patents have never discussed The role played by nickel metal in the composite silver wire has never taught the relationship between the ratio of nickel metal, palladium metal and silver and various physical properties. The present invention mainly improves the silver alloy wire containing palladium, in order to provide a silver alloy wire that can effectively reduce resistivity while maintaining excellent performance reliability and bonding yield under the premise of reducing material cost.
发明内容Contents of the invention
本发明的目的在于提供一种可以在材料成本、电阻率、性能可靠度及打线良率之间取得较佳平衡性的银合金线。The object of the present invention is to provide a silver alloy wire that can achieve a better balance among material cost, resistivity, performance reliability and wire bonding yield.
本发明的银合金线是由银、钯、镍所构成,其中钯的含量为1.8-2.2wt%,镍的含量为0.5-2.0wt%,其余为银。The silver alloy wire of the present invention is composed of silver, palladium and nickel, wherein the content of palladium is 1.8-2.2wt%, the content of nickel is 0.5-2.0wt%, and the rest is silver.
本发明所使用的银,其纯度在99.99wt%以上,杂质可忽略。而钯的含量以1.8-2.2wt%为较佳,最佳是2.0wt%。由于钯的电阻率高达10.5μΩ·㎝,因此,当该钯的含量高于2.2wt%时,将导致银合金线的电阻率逐渐升高,不利于讯号传递。而当钯的含量低于1.8wt%时,该银合金线使用在铝制垫体的接合时,银合金线与铝制垫体之间会因为界金属化合物(IMC)生成过于快速,而产生性能可靠度(Reliability)较差的问题。The silver used in the present invention has a purity of more than 99.99wt%, and the impurities are negligible. And the content of palladium is preferably 1.8-2.2wt%, the best is 2.0wt%. Since the resistivity of palladium is as high as 10.5 μΩ·cm, when the palladium content is higher than 2.2 wt%, the resistivity of the silver alloy wire will gradually increase, which is not conducive to signal transmission. And when the palladium content is lower than 1.8wt%, when the silver alloy wire is used in the bonding of the aluminum pad body, the interface metal compound (IMC) between the silver alloy wire and the aluminum pad body will be generated too quickly, and the The problem of poor performance reliability (Reliability).
本发明所使用的镍其电阻率为6.9μΩ·㎝,镍的含量越高时,连接线的电阻率越高,也就是说,当镍的含量高于2.0wt%时,连接线的电阻率将大于3.5μΩ·㎝。但是当镍的含量低于0.5wt%时,对于低电阻银合金线的性能可靠度的提升有限。本发明选择以银为基底,同时加入预定比例的钯及镍,上述组成比例的配合,可以在银及铝制垫体之间形成一层例如:(Ag-Pd-Ni)2Al、(Ag-Pd-Ni)4Al的界金属化合物,且所形成的界金属化合物具有防止银和铝之间快速扩散,以及抑制界金属化合物成长的功能,并达到较佳的性能可靠度。在此同时,通过控制该镍及钯的比例含量,也可以将银合金线的电阻率控制在3.5μΩ·㎝以下。The resistivity of the nickel used in the present invention is 6.9μΩ·cm. When the content of nickel is higher, the resistivity of the connecting wire is higher, that is to say, when the content of nickel is higher than 2.0wt%, the resistivity of the connecting wire Will be greater than 3.5μΩ·cm. However, when the nickel content is lower than 0.5 wt%, the performance reliability improvement for the low-resistance silver alloy wire is limited. In the present invention, silver is selected as the substrate, and palladium and nickel are added in a predetermined proportion. The combination of the above composition ratios can form a layer between silver and aluminum pads such as: (Ag-Pd-Ni) 2 Al, (Ag -Pd-Ni) 4 Al boundary metal compound, and the formed boundary metal compound has the function of preventing rapid diffusion between silver and aluminum, and inhibiting the growth of boundary metal compound, and achieves better performance reliability. At the same time, by controlling the proportions of nickel and palladium, the resistivity of the silver alloy wire can also be controlled below 3.5 μΩ·cm.
本发明的有益效果在于:通过控制该钯的含量,并加入适量比例的镍,可以使银合金线在降低材料成本的前提下,达到低电阻率、性能可靠度优良以及优良打线良率等等的功效。The beneficial effects of the present invention are: by controlling the content of the palladium and adding an appropriate proportion of nickel, the silver alloy wire can achieve low resistivity, excellent performance reliability, and excellent wire bonding yield under the premise of reducing material cost. and so on.
具体实施方式Detailed ways
本发明银合金线的较佳实施例是由银、钯及镍所构成,其中钯的含量为1.8-2.2wt%,镍的含量为0.5-2.0wt%,其余为纯度99.99wt%的银。当钯的含量低于1.8wt%时,本发明该银合金线的性能可靠度较差,若钯的含量高于2.2wt%,会有电阻率较高的缺点。A preferred embodiment of the silver alloy wire of the present invention is composed of silver, palladium and nickel, wherein the content of palladium is 1.8-2.2wt%, the content of nickel is 0.5-2.0wt%, and the rest is silver with a purity of 99.99wt%. When the content of palladium is lower than 1.8wt%, the performance reliability of the silver alloy wire of the present invention is poor, and if the content of palladium is higher than 2.2wt%, there will be a disadvantage of high resistivity.
本发明所添加的镍的含量越高,该银合金线的电阻率越高,为了将电阻率控制在3.5μΩ·㎝以下,较佳地,该镍的含量不高于2.0wt%,但是当该镍的含量低于0.5wt%时,该银合金线的性能可靠度不佳。The higher the content of nickel added in the present invention, the higher the resistivity of the silver alloy wire. In order to control the resistivity below 3.5μΩ·cm, preferably, the nickel content is not higher than 2.0wt%, but when When the nickel content is less than 0.5wt%, the performance reliability of the silver alloy wire is poor.
制作本发明的银合金线时,将银、钯及镍等元素依比例投入一个熔炉中,以混炼制得一个熔融状态的合金液体。然后将该合金液体以连铸方式制成棒体,再经过辊轧(press roll)、主抽线(heavy drawing)、细抽线(fine drawing)、表面清洗、烘干、定型退火(final annealing)、绕线(rewinding)等等的加工步骤,就可以制成本发明的银合金线,该银合金线专用于半导体元件的打线接合封装制程。When making the silver alloy wire of the present invention, elements such as silver, palladium and nickel are put into a melting furnace in proportion to knead to obtain a molten alloy liquid. Then the alloy liquid is made into rods by continuous casting, and then undergoes press roll, heavy drawing, fine drawing, surface cleaning, drying, and final annealing. ), winding (rewinding) and other processing steps, the silver alloy wire of the present invention can be produced, and the silver alloy wire is specially used in the wire bonding packaging process of semiconductor elements.
本发明将就以下实施例来作进一步说明,但应了解的是,所示实施例仅为例示说明之用,而不应被解释为本发明实施的限制。The present invention will be further described with reference to the following examples, but it should be understood that the examples shown are for illustrative purposes only and should not be construed as limitations on the practice of the present invention.
本发明银合金线的实施例、比较例,以及含金、钯、银的低电阻银合金线的说明:Examples of silver alloy wires of the present invention, comparative examples, and descriptions of low-resistance silver alloy wires containing gold, palladium, and silver:
表1:Table 1:
◎:表示该评比项目优良◎: Indicates that the evaluation item is excellent
○:表示该评比项目尚可○: Indicates that the evaluation item is acceptable
△:表示该评比项目处于临界边缘△: Indicates that the evaluation item is on the verge of critical
╳:表示该评比项目不良╳: Indicates that the evaluation item is bad
(电阻率大于3.5μΩ·cm就判为不良,电阻率小于3.5μΩ·cm就判为优良)(If the resistivity is greater than 3.5μΩ·cm, it will be judged as bad, if the resistivity is less than 3.5μΩ·cm, it will be judged as good)
PCT:为Press Cooker Test的缩写,又称压力锅试验,根据JESD22-A102,将银合金线产品放置在温度121℃、湿度100%RH、压力29.7psi的环境下,经250hrs的测试后,采用聚焦离子束(FocusedIon Beam,简称FIB)观察银合金线与基板之间的界金属化合物(IMC)状况。PCT: The abbreviation of Press Cooker Test, also known as the pressure cooker test, according to JESD22-A102, the silver alloy wire product is placed in an environment with a temperature of 121°C, a humidity of 100%RH, and a pressure of 29.7psi. Ion beam (Focused Ion Beam, referred to as FIB) to observe the interface metal compound (IMC) between the silver alloy wire and the substrate.
由表1的习知例1-6的实验结果可知,当银合金线中含有1wt%的钯及1wt%的金时,虽然成品的打线良率及电阻率都不错,但是成品的性能可靠度较差,而当提高金或钯的含量时,虽然可以改善性能可靠度,但该银合金线的电阻率太高,不利于讯号的传递。From the experimental results of conventional examples 1-6 in Table 1, it can be seen that when the silver alloy wire contains 1wt% palladium and 1wt% gold, although the wire bonding yield and resistivity of the finished product are good, the performance of the finished product is reliable The accuracy is poor, and when the content of gold or palladium is increased, although the performance reliability can be improved, the resistivity of the silver alloy wire is too high, which is not conducive to the transmission of signals.
由表1的比较例1-10的实验结果可知,本发明的钯的含量如果低于1.8wt%时,即使镍金属的含量达到0.5wt%,甚至高达3wt%,其可靠度仍不理想。As can be seen from the experimental results of Comparative Examples 1-10 in Table 1, if the palladium content of the present invention is lower than 1.8wt%, even if the nickel metal content reaches 0.5wt%, or even as high as 3wt%, its reliability is still unsatisfactory.
当本发明将镍金属的使用量降低到0.1wt%,并提高该钯的含量时,虽然具有优良的性能可靠度及优良的打线良率,但银合金线的电阻率稍高。此外,本发明将镍的含量维持在0.5-2.0wt%的范围内,但将该钯的使用量增加到3wt%时,虽然银合金线的各项物性都很好,但电阻率的表现较差。如果将钯、镍的含量都提高到3wt%,该银合金线的所有物性都不理想。When the present invention reduces the usage of nickel metal to 0.1wt% and increases the content of palladium, although it has excellent performance reliability and excellent wire bonding yield, the resistivity of silver alloy wire is slightly higher. In addition, the present invention maintains the content of nickel within the range of 0.5-2.0wt%, but when the amount of palladium is increased to 3wt%, although the physical properties of the silver alloy wire are very good, the performance of the resistivity is relatively low. Difference. If the contents of palladium and nickel are increased to 3wt%, all the physical properties of the silver alloy wire are unsatisfactory.
而由表1的实施例1、2的实验结果可知,本发明通过控制钯及镍的含量,除了可以有效的降低材料成本之外,所制得的银合金线还具有低电阻率、优良的性能可靠度以及优良的打线良率。From the experimental results of Examples 1 and 2 in Table 1, it can be known that the present invention can effectively reduce the material cost by controlling the content of palladium and nickel, and the silver alloy wire obtained also has low resistivity, excellent Performance reliability and excellent wire bonding yield.
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CN108062991A (en) * | 2016-11-08 | 2018-05-22 | 光大应用材料科技股份有限公司 | silver alloy wire |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1280387A (en) * | 1999-07-12 | 2001-01-17 | 索尼株式会社 | Metal material for electronic unit, electronic unit, electronic equipment and treating method for metal material |
WO2006132412A1 (en) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for electrode, wiring and electromagnetic shielding |
US20080240975A1 (en) * | 2007-03-30 | 2008-10-02 | Mk Electron Co. Ltd. | Ag-based alloy wire for semiconductor package |
US20090321269A1 (en) * | 2000-05-02 | 2009-12-31 | Ishihara Chemical Co., Ltd. | Silver and silver alloy plating bath |
CN101630669A (en) * | 2008-07-14 | 2010-01-20 | Mk电子株式会社 | Semiconductor encapsulation of Ag or Ag alloy lead wire |
-
2013
- 2013-02-08 CN CN201310050878.1A patent/CN103985699A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1280387A (en) * | 1999-07-12 | 2001-01-17 | 索尼株式会社 | Metal material for electronic unit, electronic unit, electronic equipment and treating method for metal material |
US20090321269A1 (en) * | 2000-05-02 | 2009-12-31 | Ishihara Chemical Co., Ltd. | Silver and silver alloy plating bath |
WO2006132412A1 (en) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for electrode, wiring and electromagnetic shielding |
US20080240975A1 (en) * | 2007-03-30 | 2008-10-02 | Mk Electron Co. Ltd. | Ag-based alloy wire for semiconductor package |
CN101630669A (en) * | 2008-07-14 | 2010-01-20 | Mk电子株式会社 | Semiconductor encapsulation of Ag or Ag alloy lead wire |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108062991A (en) * | 2016-11-08 | 2018-05-22 | 光大应用材料科技股份有限公司 | silver alloy wire |
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