CN110066938A - A kind of wire for microencapsulated - Google Patents
A kind of wire for microencapsulated Download PDFInfo
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- CN110066938A CN110066938A CN201910356806.7A CN201910356806A CN110066938A CN 110066938 A CN110066938 A CN 110066938A CN 201910356806 A CN201910356806 A CN 201910356806A CN 110066938 A CN110066938 A CN 110066938A
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- Prior art keywords
- wire
- silver
- copper
- annealing
- 200ppm
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- 239000000463 material Substances 0.000 claims abstract description 43
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 23
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 17
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 16
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 16
- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- 238000005491 wire drawing Methods 0.000 claims abstract description 11
- 238000005275 alloying Methods 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 47
- 239000000956 alloy Substances 0.000 claims description 47
- 238000000137 annealing Methods 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 description 16
- 230000008018 melting Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 239000010946 fine silver Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
The present invention relates to a kind of wires for microencapsulated, belong to technical field of semiconductors.Based on mass fraction, including silver-colored 90-99%, copper 0.5-5%, golden 0.5-5%, gallium, nickel, cerium, platinum, indium are 20-200PPM to the constituent of wire of the present invention, and after founding and wire drawing, the wire of diameter of section≤50 μm is made；The present invention is added alloying element, cost can be greatly lowered based on high-purity silver material, and the conductivity with line footpath is higher than traditional bonding wire；Wire of the present invention is suitable for the micromation encapsulation of integrated circuit, large scale integrated circuit, is also applied for discrete device, LED encapsulation；The production technology of wire of the present invention is convenient and practical.
Description
Technical field
The present invention relates to a kind of wires for microencapsulated, belong to technical field of semiconductors.
Background technique
Semiconductor-sealing-purpose wire is one of basic material of Packaging Industry, it decides the developing water of integrated circuit
Flat, required wire needs to have that mechanical strength is good, and balling-up characteristic is good, and zygosity is good, is easy to the characteristic of operation and welding.
The wire that tradition uses is a kind of high-purity spun gold of microalloying, commonly uses alkaline-earth metal, rare and rare earth metal, mistake
It crosses metal high-purity Au is added with total mass fraction 0.0001%-0.01% and be made, but in recent years, gold market value hurricane all the way
It rises, increases 140% less than ten years gold cost of material, to the producer for using wire, increase heavy raw material
Cost, while also considerably increasing the production and carrying cost of production firm.
In terms of research and development, as sophisticated semiconductor encapsulation technology enters China's Mainland, continent manufacturer also proposed higher
Requirement, metal wire electrical parameter, intensive parameter, balling-up parameter etc. require it is higher and higher, due to packaging size constantly subtract
Small, conventional wire has had reached its capacity limit, and this requires diameters thinner, the higher wire of intensity adapts to
The packaging of ultra-fine spacing, and, it is desirable that wire has shorter heat affected area to meet the requirement that ultralow arc key is closed.
The metallic composite of noble metal cladding can be such that wire further miniaturize, and can both shorten between bonding in this way
Away from and super large-scale integration high-density packages can be developed, the golden packet palladium composite filament developed at present, golden packet platinum is compound
Silk, platinum gold filled composite filament, golden contracted payment composite filament, golden copper-clad composite filament, golden coated aluminum compound silk etc., existing Chinese patent literature
CN102437136 discloses a kind of gold and silver system bonding alloy wire, including substrate and is plated in the coating of substrate surface, wherein substrate
For the silver-colored material of total purity >=99.9%, and it is added with alloying element Ca, Pd, Au in silver-colored material, coating is gold, and the present invention is with high-purity
Based on silver-colored material, alloying element is added, and be coated with gold on silver-colored material surface, this kind of bonding wire has easy balling-up, Yi Jian
The bond strength to write letter when being bonded can be improved in conjunction and good arc controllability, guarantees production efficiency when application, but
It is that the processing of cladded type alloy wire difficulty or processing technology are complicated, it is difficult to form industrialization.
Alloy-type spun gold wire, gold and silver can be infinitely dissolved in liquid and solid-state, significantly improve the intensity of wire,
Anti-vibration fracture function admirable, when synthesis of cyclic, ball neck will not be broken, and chip will not occur broken because ball is soft
It splits, existing Chinese patent literature CN103194637A discloses a kind of bonding alloy filamentary silver, silver-colored < 90wt%, golden 3.0wt%-
10.0wt%, palladium 3.0wt%-8.0wt% obtain alloy conductive ability is strong, there is certain inoxidizability, good plastic
Property, higher fracture load and preferable elongation, still, palladium metal belongs to noble metal, and price leads to bonding gold wire still
Cost with higher.
In order to meet urgent need of the microelectronics industry to low cost, high-performance novel wire, domestic and international many companies
With research institution all in the research work for being engaged in spun gold substitute products, wherein copper wire becomes the active material of research package lead,
Copper wire has excellent mechanical property and low cost, but there are some disadvantages in practical applications, such as copper wire is really up to the mark causes
Second solder joint is easy to escape silk, and copper wire has high oxidation characteristic, is mixed when opening easy to oxidize after packing or use using nitrogen hydrogen
Gas is protected, and risk increases.
In conclusion preparing, a kind of intensity is high, and performance is good, and miniaturization wire at low cost has significant meaning.
Summary of the invention
Therefore, the technical problem to be solved in the present invention is that overcome in the prior art bonding gold wire it is at high cost, performance is bad
The technical issues of, a kind of wire for microencapsulated is provided.
The invention discloses a kind of alloy composites, in terms of the gross mass of the alloy composite, comprising: silver-colored 90-
99wt%, copper 0.5-5wt%, golden 0.5-5wt%, gallium 20-200PPM, nickel 20-200PPM, cerium 20-200PPM, platinum 20-
200PPM, indium 20-200PPM.
Preferably, including following component: silver-colored 92-97wt%, copper 1.5-4wt%, golden 1.5-4wt%, gallium 100-150PPM
(tensile strength of alloy threadlet), nickel 100-150PPM, cerium 100-150PPM, platinum 100-150PPM, indium 100-150PPM.
Preferably, including following component: silver-colored 95wt%, copper 2.5wt%, golden 2.5wt%, gallium 120PPM, nickel 120PPM, cerium
120PPM, platinum 120PPM, indium 120PPM.
Preferably, the purity of the silver, copper and gold is 99.99%.
The invention also discloses a kind of wire, wire section diameter≤50 μm, by the alloy composite
It is prepared.
The invention also discloses a kind of preparation methods of wire, comprising the following steps:
Founding step: the base material that silver-based material and other alloying elements form is subjected to founding, bar is made；
Drawing step: the bar is subjected to wire drawing, is drawn to the fine silk material of required size；
Annealing steps: the fine silk material is subjected to annealing process and is handled up to required wire.
Preferably, the annealing process is under hydrogen-nitrogen mixture gas protection, and annealing temperature is arranged 450-550 DEG C, annealing speed
Degree is 55-65 ms/min.
Preferably, the volume ratio of hydrogen and nitrogen is 1:19 in the hydrogen-nitrogen mixture gas.
Wire, that is, bonding alloy wire disclosed in this invention is prepared or by the metal by the alloy composite
Silk is made or is prepared by the wire preparation method.
The invention also discloses a kind of wire that the alloy composite is prepared or by the wire or by institute
State the application in the wire integrated circuit microencapsulated field that wire preparation method is prepared.
Technical solution of the present invention has the advantages that
1. alloy composite of the present invention, the silver for being 90-99% including mass fraction, mass fraction are 0.5-5%'s
Copper, mass fraction are the gold of 0.5-5%, and silver point is 960.5 DEG C, and the fusing point of copper is 1083 DEG C, and golden fusing point is 1063 DEG C,
It is easy to founding and solid solution production alloy between the alloy composite, increases the hardness and plasticity of the alloy of generation, and not
The production cost that semiconductor is reduced on the basis of alloy property is undermined, the increase of copper content improves the electricity of bonding wire
Performance and thermal property improve the service life and reliability of product；The addition of minor metallic element nickel (Ni), with the metals such as copper
Synergy can be effectively controlled the oxidation of silver, improve the service performance of semiconductor devices in harsh environments；It is therein micro-
It measures metallic element gallium (Ga) and copper interacts, the tensile strength of manufactured alloy can be improved；Minor metallic element platinum (Pt) and
The addition of indium (In) can significantly improve the heat resistance of the alloy of generation, improve the resistance to flowing as alloy wire when being packaged
Property；The addition of minor metallic element cerium (Ce) can refine the crystal grain in the alloy of generation, increase bonding ball neck intensity.
2. wire made of alloy composite of the present invention, mechanical strong relative to fine silver line, gold line or pure copper wire
It spends, zygosity is good, is easy to the characteristic of operation and welding, and balling-up is good, and gas shield is added can avoid sliding ball to greatest extent
Phenomenon generates；And opposite other gold lines and fine silver line, copper is added, under the premise of promoting tension intensity, cost difference
90% and 5% is saved, wire of the present invention has more preferable as bonding gold wire in microencapsulated or when encapsulation semiconductor
Tensile strength, reduce broken string frequency, artificial threading step can be reduced, improve bonding production capacity, lifting means mobility.
3. the preparation method of wire of the present invention is easy to operate, practicability is good, is easy to produce in batches.
Specific embodiment
There is provided following embodiments is to preferably further understand the present invention, it is not limited to the best embodiment party
Formula is not construed as limiting the contents of the present invention and protection scope, anyone under the inspiration of the present invention or by the present invention and its
The feature of his prior art is combined and any and identical or similar product of the present invention for obtaining, all falls within of the invention
Within protection scope.
Specific experiment step or condition person are not specified in embodiment, according to the literature in the art described routine experiment
The operation of step or condition can carry out.Reagents or instruments used without specified manufacturer, being can be by commercially available acquisition
Conventional products.
Embodiment 1
A kind of specific embodiment of wire for microencapsulated is present embodiments provided, as described below:
Founding step: the silver-colored 990g that investment purity is 99.99% in crucible, the golden 5g that purity is 99.99%, purity are
99.99% copper 5g, gallium 20PPM, nickel 20PPM, cerium 20PPM, platinum 20PPM, indium 20PPM, in height after above-mentioned each component is mixed
The melting under 9.8 × 10-4Pa vacuum degree, and alloy bar material is made, the temperature of vacuum melting is 1100 DEG C, the alloy bar material
Diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 50 μm of fine silk material to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the wire.
Embodiment 2
A kind of specific embodiment of wire for microencapsulated is present embodiments provided, as described below:
Founding step: the silver-colored 900g that investment purity is 99.99% in crucible, the golden 50g that purity is 99.99%, purity are
99.99% copper 50g, gallium 100PPM, nickel 100PPM, cerium 100PPM, platinum 100PPM, indium 100PPM mix above-mentioned each component
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree afterwards, and alloy bar material is made, the temperature of vacuum melting is 1200 DEG C, alloy bar
Material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 20 μm of fine silk material to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 450 DEG C, and annealing speed is that 55m/min obtains the wire.
Embodiment 3
A kind of specific embodiment of wire for microencapsulated is present embodiments provided, as described below:
Founding step: the silver-colored 920g that investment purity is 99.99% in crucible, the golden 40g that purity is 99.99%, purity are
99.99% copper 40g, gallium 120PPM, nickel 120PPM, cerium 120PPM, platinum 120PPM, indium 120PPM mix above-mentioned each component
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree afterwards, and alloy bar material is made, the temperature of vacuum melting is 1150 DEG C, alloy bar
Material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 23 μm of fine silk material to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the wire.
Embodiment 4
A kind of specific embodiment of wire for microencapsulated is present embodiments provided, as described below:
Founding step: the silver-colored 950g that investment purity is 99.99% in crucible, the gold 25 that purity is 99.99%, purity are
99.99% copper 25g, gallium 150PPM, nickel 150PPM, cerium 150PPM, platinum 150PPM, indium 150PPM mix above-mentioned each component
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree afterwards, and alloy bar material is made, the temperature of vacuum melting is 1100 DEG C, alloy bar
Material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 20 μm of fine silk material to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 550 DEG C, and annealing speed is that 65m/min obtains the wire.
Embodiment 5
A kind of specific embodiment of wire for microencapsulated is present embodiments provided, as described below:
Founding step: the silver-colored 970g that investment purity is 99.99% in crucible, the golden 15g that purity is 99.99%, purity are
99.99% copper 15g, gallium 200PPM, nickel 200PPM, cerium 200PPM, platinum 200PPM, indium 200PPM mix above-mentioned each component
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree afterwards, and alloy bar material is made, the temperature of vacuum melting is 1200 DEG C, alloy bar
Material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 30 μm of fine silk material to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the wire.
Comparative example 1
This comparative example provides a kind of specific embodiment of fine silver bonding wire for microencapsulated, including walks as follows
It is rapid:
Founding step: silver-colored 1000g, gallium 100PPM, nickel 100PPM, the cerium 100PPM that investment purity is 99.99% in crucible,
Platinum 100PPM, indium 100PPM, the melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after above-mentioned each component is mixed, and bar is made,
The temperature of vacuum melting is 1200 DEG C, diameter of rod 8mm；
Drawing step: wire drawing is carried out to the bar, forms the wire rod of predetermined line footpath；It is drawn, carefully by rough, middle
It draws, ultra-fine draw bar from thickIt is 20 μm of filamentary silver to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the fine silver bonding wire.
Comparative example 2
This comparative example provides a kind of specific embodiment of proof gold bonding wire for microencapsulated, including walks as follows
It is rapid:
Founding step: golden 1000g, gallium 100PPM, nickel 100PPM, the cerium 100PPM that investment purity is 99.99% in crucible,
Platinum 100PPM, indium 100PPM, the melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after above-mentioned each component is mixed, and bar is made,
The temperature of vacuum melting is 1200 DEG C, diameter of rod 8mm；
Drawing step: wire drawing is carried out to the bar, forms the wire rod of predetermined line footpath；It is drawn, carefully by rough, middle
It draws, ultra-fine draw bar from thickIt is 20 μm of spun gold to diameter is carefully drawn into；
Annealing steps: the volume ratio in hydrogen and nitrogen be 1:19 hydrogen-nitrogen mixture gas in the fine silk material into
Row annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the proof gold bonding wire.
Comparative example 3
This comparative example provides a kind of specific embodiment of fine copper bonding wire for microencapsulated, including walks as follows
It is rapid:
Founding step: copper 1000g, gallium 100PPM, nickel 100PPM, the cerium 100PPM that investment purity is 99.99% in crucible,
Platinum 100PPM, indium 100PPM, the melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after above-mentioned each component is mixed, and bar is made,
The temperature of vacuum melting is 1200 DEG C, vacuum degree is higher than 9.8 × 10-4Pa, diameter of rod 8mm；
Drawing step: wire drawing is carried out to the bar, forms the wire rod of predetermined line footpath；It is drawn, carefully by rough, middle
It draws, ultra-fine draw bar from thickIt is 20 μm of copper wire to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the fine copper bonding wire.
1 tensile test of experimental example
Test method: according to 10573 test method of GB/T, 100mm finished wire rod is taken to be placed in tension tester, standard
Tensile speed 10mm/min is recorded rupture strength (BL) after wire rod is pulled off, and unit is Cn (li ox), is repeated 10 times, is taken
Average value, it is specific as shown in table 1.
1 embodiment 1-5 of table, comparative example 1-3 tensile test result
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Comparative example 1 | Comparative example 2 | Comparative example 3 | |
| 1 | 7.75 | 7.73 | 7.74 | 7.68 | 7.68 | 5.85 | 7.35 | 6.85 |
| 2 | 7.80 | 7.81 | 7.65 | 7.8 | 7.82 | 5.85 | 7.35 | 6.82 |
| 3 | 7.82 | 7.65 | 7.8 | 7.72 | 7.83 | 5.85 | 7.30 | 6.87 |
| 4 | 7.65 | 7.65 | 7.65 | 7.73 | 7.72 | 5.90 | 7.30 | 6.90 |
| 5 | 7.66 | 7.67 | 7.63 | 7.68 | 7.66 | 5.95 | 7.30 | 6.57 |
| 6 | 7.68 | 7.68 | 7.7 | 7.75 | 7.68 | 5.95 | 7.30 | 6.58 |
| 7 | 7.59 | 7.59 | 7.65 | 7.59 | 7.82 | 5.90 | 7.25 | 6.95 |
| 8 | 7.86 | 7.88 | 7.54 | 7.77 | 7.68 | 5.90 | 7.20 | 6.98 |
| 9 | 7.82 | 7.8 | 7.82 | 7.84 | 7.68 | 5.90 | 7.35 | 6.85 |
| 10 | 7.71 | 7.62 | 7.7 | 7.68 | 7.75 | 5.95 | 7.30 | 6.83 |
| Mean break strengths | 7.73 | 7.71 | 7.69 | 7.72 | 7.73 | 5.90 | 7.30 | 6.82 |
2 abnormal broken line frequency test of experimental example
Test method: standard key is carried out using bearing wire of the High-Speed Automatic bonding apparatus of KS-CONNX to 500m/ axis
Close test, through burning ball-bank-tangent line-reburn ball be a method being circulated throughout tested to obtain abnormal broken line frequency；Speed
Degree is that 20-30K is recycled, and the H frequency that specifically breaks is as shown in table 2.
2 embodiment 1-5 of table, comparative example 1-3 exception short-term frequency test result
The above embodiments are merely examples for clarifying the description, and does not limit the embodiments.For institute
For the those of ordinary skill in category field, other various forms of variations or change can also be made on the basis of the above description
It is dynamic.There is no necessity and possibility to exhaust all the enbodiments.And obvious variation extended from this or change
It moves still within the protection scope of the invention.
Claims (9)
1. a kind of alloy composite, which is characterized in that in terms of the gross mass of the alloy composite, comprising: silver-colored 90-99wt%,
Copper 0.5-5wt%, golden 0.5-5wt%, gallium 20-200PPM, nickel 20-200PPM, cerium 20-200PPM, platinum 20-200PPM, indium 20-
200PPM。
2. alloy composite according to claim 1, which is characterized in that including following component: silver-colored 92-97wt%, copper
1.5-4wt%, golden 1.5-4wt%, gallium 100-150PPM, nickel 100-150PPM, cerium 100-150PPM, platinum 100-150PPM, indium
100-150PPM。
3. alloy composite according to claim 1, which is characterized in that including following component: silver-colored 95wt%, copper
2.5wt%, golden 2.5wt%, gallium 120PPM, nickel 120PPM, cerium 120PPM, platinum 120PPM, indium 120PPM.
4. alloy composite according to claim 1, which is characterized in that the silver, copper and gold purity be
99.99%.
5. a kind of wire, which is characterized in that wire section diameter≤50 μm, as described in claim any one of 1-4
Alloy composite be prepared.
6. a kind of preparation method of wire described in claim 5, which comprises the following steps:
Founding step: the base material that silver-based material and other alloying elements form is subjected to founding, bar is made；
Drawing step: the bar is subjected to wire drawing, is drawn to the fine silk material of required size；
Annealing steps: the fine silk material is subjected to annealing process and is handled up to required wire.
7. the preparation method of wire according to claim 6, which is characterized in that the annealing process is in hydrogen nitrogen mixed gas
Under body protection, annealing temperature is arranged 450-550 DEG C, and annealing speed is 55-65 ms/min.
8. the preparation method of wire according to claim 7, which is characterized in that in the hydrogen-nitrogen mixture gas hydrogen and
The volume ratio of nitrogen is 1:19.
9. wire or the gold as described in claim 5 that a kind of any one of claim 1-4 alloy composite is prepared
Belong to silk or the wire being prepared by any one of the claim 6-8 wire preparation method in integrated circuit microencapsulated
The application in field.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081670A (en) * | 2019-12-18 | 2020-04-28 | 浙江大学 | Low-cost silver-based bonding alloy wire and preparation method and application thereof |
| CN116024446A (en) * | 2023-01-09 | 2023-04-28 | 四川威纳尔特种电子材料有限公司 | High-conductivity silver-copper-indium alloy bonding wire and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679926A (en) * | 2011-11-21 | 2016-06-15 | 贺利氏德国有限责任两合公司 | Silver bond wire for semiconductor devices |
| CN106414793A (en) * | 2015-02-27 | 2017-02-15 | 三菱综合材料株式会社 | Ag alloy sputtering target and Ag alloy film manufacturing method |
| CN106935523A (en) * | 2017-03-30 | 2017-07-07 | 深圳粤通应用材料有限公司 | A kind of preparation method of bonding alloy wire |
| CN107195609A (en) * | 2014-07-10 | 2017-09-22 | 新日铁住金高新材料株式会社 | Bonding wire for semiconductor device |
-
2019
- 2019-04-29 CN CN201910356806.7A patent/CN110066938A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679926A (en) * | 2011-11-21 | 2016-06-15 | 贺利氏德国有限责任两合公司 | Silver bond wire for semiconductor devices |
| CN107195609A (en) * | 2014-07-10 | 2017-09-22 | 新日铁住金高新材料株式会社 | Bonding wire for semiconductor device |
| CN106414793A (en) * | 2015-02-27 | 2017-02-15 | 三菱综合材料株式会社 | Ag alloy sputtering target and Ag alloy film manufacturing method |
| CN106935523A (en) * | 2017-03-30 | 2017-07-07 | 深圳粤通应用材料有限公司 | A kind of preparation method of bonding alloy wire |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081670A (en) * | 2019-12-18 | 2020-04-28 | 浙江大学 | Low-cost silver-based bonding alloy wire and preparation method and application thereof |
| CN116024446A (en) * | 2023-01-09 | 2023-04-28 | 四川威纳尔特种电子材料有限公司 | High-conductivity silver-copper-indium alloy bonding wire and preparation method thereof |
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