CN103956984A - Multilayer structure body with filtering performance - Google Patents
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Abstract
Description
技术领域 technical field
本发明属于电子技术领域，特别是一种小型化并且滤波性能优异的多层结构体。 The invention belongs to the field of electronic technology, in particular to a multilayer structure with miniaturization and excellent filtering performance.
背景技术 Background technique
在射频领域，很多地方都需要小型化高性能且具有滤波功能的器件，希望所需频率的能量都可以通过网络，而最大程度的抑制干扰或者其它不希望在终端看到的频率。 In the radio frequency field, miniaturized, high-performance devices with filtering functions are required in many places. It is hoped that the energy of the required frequency can pass through the network, and the interference or other frequencies that are not expected to be seen by the terminal are suppressed to the greatest extent.
随着无线通信技术和单片微波集成电路的快速发展，要求电子产品向小型化，低成本，高性能，高集成度的趋势发展。如何将原本在平面电路占大量面积的元件堆叠在三维立体结构中，从而使滤波器件在极小的面积下实现也是目前要解决的问题。多层结构体是用层叠式的电路结构来实现滤波电路的功能，技术上是通过LTCC工艺实现的，LTCC技术能够为无源和有源器件提供三维立体的集成平台，可实现电路立体化的要求，而且陶瓷元件有良好的特性，可以满足目前市场对小型化、低成本、高性能的要求。 With the rapid development of wireless communication technology and single-chip microwave integrated circuits, electronic products are required to develop towards the trend of miniaturization, low cost, high performance and high integration. How to stack components that originally occupy a large area in a planar circuit in a three-dimensional structure, so that the filter device can be realized in a very small area is also a problem to be solved at present. The multi-layer structure uses a stacked circuit structure to realize the function of the filter circuit. Technically, it is realized through the LTCC process. LTCC technology can provide a three-dimensional integration platform for passive and active devices, and can realize three-dimensional circuits. Requirements, and ceramic components have good characteristics, which can meet the current market requirements for miniaturization, low cost, and high performance.
目前对国内外设计的滤波结构体进行了大量的研究，大多数结构体低频段占用体积太大，集成度不高，已远远不能满足小型化的要求。此外，目前的大多数滤波器结构，如果要抑制通带附近的杂波频率，阻带内的衰减就显得不足了。因此，如何实现一种具有滤波性能的多层结构体，已成为业界急需解决的问题之一，现有技术尚无相关描述。 At present, a lot of research has been done on the filter structures designed at home and abroad. Most of the structures occupy too much volume in the low frequency band, and the integration degree is not high, which is far from meeting the requirements of miniaturization. In addition, most of the current filter structures have insufficient attenuation in the stop band if the clutter frequencies near the pass band are to be suppressed. Therefore, how to realize a multi-layer structure with filtering performance has become one of the urgent problems in the industry, and there is no relevant description in the prior art.
发明内容 Contents of the invention
本发明所要解决的技术问题在于提供一种带外抑制度优异、带内插入损耗小、可靠性高、集成度高、尺寸小的具有滤波性能的多层结构体。 The technical problem to be solved by the present invention is to provide a multi-layer structure with filtering performance that has excellent out-of-band suppression, low in-band insertion loss, high reliability, high integration and small size.
本发明解决上述技术问题所采取的技术方案如下：一种具有滤波性能的多层结构体，该多层结构体整体是一个陶瓷体，多个电介质层层叠于该陶瓷体中，具体包括顶层金属地G1、底层金属地G2、第一耦合线电感L1、第二耦合线电感L2、第三耦合线电感L3、第四耦合线电感L4、第五耦合线电感L5、第六耦合线电感L6和第一平板电容C1、第二平板电容C2、第三平板电容C3、第四平板电容C4、第五平板电容C5、第六平板电容C6； The technical solution adopted by the present invention to solve the above technical problems is as follows: a multilayer structure with filtering performance, the multilayer structure is a ceramic body as a whole, and multiple dielectric layers are stacked in the ceramic body, specifically including the top layer metal Ground G1, underlying metal ground G2, first coupled line inductance L1, second coupled line inductance L2, third coupled line inductance L3, fourth coupled line inductance L4, fifth coupled line inductance L5, sixth coupled line inductance L6 and The first plate capacitor C1, the second plate capacitor C2, the third plate capacitor C3, the fourth plate capacitor C4, the fifth plate capacitor C5, and the sixth plate capacitor C6;
其中顶层金属地G1、底层金属地G2均为单层平板金属结构，第一耦合线电感L1、第二耦合线电感L2、第三耦合线电感L3、第四耦合线电感L4、第五耦合线电感L5、第六耦合线电感L6均为双层矩形螺旋线圈结构，第一平板电容C1、第二平板电容C2、第三平板电容C3、第四平板电容C4、第五平板电容C5、第六平板电容C6均为双层金属板结构; The top metal ground G1 and the bottom metal ground G2 are single-layer flat metal structures. The first coupled line inductor L1, the second coupled line inductor L2, the third coupled line inductor L3, the fourth coupled line inductor L4, and the fifth coupled line The inductance L5 and the sixth coupled line inductance L6 are double-layer rectangular spiral coil structures, the first plate capacitor C1, the second plate capacitor C2, the third plate capacitor C3, the fourth plate capacitor C4, the fifth plate capacitor C5, the sixth plate capacitor The plate capacitor C6 is a double-layer metal plate structure;
第一耦合线电感L1与第一平板电容C1相并联，第一耦合线电感L1的一端与第一平板电容C1的一端相连，第一耦合线电感L1的另一端和第一平板电容C1的另一端分别接地，上述两个器件构成第一谐振器； The first coupled line inductance L1 is connected in parallel with the first plate capacitor C1, one end of the first coupled line inductance L1 is connected to one end of the first plate capacitor C1, the other end of the first coupled line inductance L1 is connected to the other end of the first plate capacitor C1 One end is grounded respectively, and the above two devices form a first resonator;
第二耦合线电感L2与第二平板电容C2相并联，第二耦合线电感L2的一端与第二平板电容C2的一端相连，第二耦合线电感L2的另一端和第二平板电容C2的另一端分别接地，上述两个器件构成第二谐振器； The second coupled line inductance L2 is connected in parallel with the second plate capacitor C2, one end of the second coupled line inductance L2 is connected with one end of the second plate capacitor C2, the other end of the second coupled line inductance L2 is connected with the other end of the second plate capacitor C2 One end is grounded respectively, and the above two devices form a second resonator;
第三耦合线电感L3与第三平板电容C3相并联，第三耦合线电感L3的一端与第三平板电容C3的一端相连，第三耦合线电感L3的另一端和第三平板电容C3的另一端分别接地，上述两个器件构成第三谐振器； The third coupled line inductance L3 is connected in parallel with the third plate capacitor C3, one end of the third coupled line inductance L3 is connected with one end of the third plate capacitor C3, the other end of the third coupled line inductance L3 is connected with the other end of the third plate capacitor C3 One end is grounded respectively, and the above two devices form a third resonator;
第四耦合线电感L4与第四平板电容C4相并联，第四耦合线电感L4的一端与第四平板电容C4的一端相连，第四耦合线电感L4的另一端和第四平板电容C4的另一端分别接地，上述两个器件构成第四谐振器； The fourth coupled line inductance L4 is connected in parallel with the fourth plate capacitor C4, one end of the fourth coupled line inductance L4 is connected to one end of the fourth plate capacitor C4, the other end of the fourth coupled line inductance L4 is connected to the other end of the fourth plate capacitor C4 One end is grounded respectively, and the above two devices form a fourth resonator;
第五耦合线电感L5与第五平板电容C5相并联，第五耦合线电感L5的一端与第五平板电容C5的一端相连，第五耦合线电感L5的另一端和第五平板电容C5的另一端分别接地。上述两个器件构成第五谐振器； The fifth coupled line inductor L5 is connected in parallel with the fifth plate capacitor C5, one end of the fifth coupled line inductor L5 is connected to one end of the fifth plate capacitor C5, the other end of the fifth coupled line inductor L5 is connected to the other end of the fifth plate capacitor C5 One end is grounded respectively. The above two devices constitute a fifth resonator;
第六耦合线电感L6与第六平板电容C6相并联，第六耦合线电感L6的一端与第六平板电容C6的一端相连，第六耦合线电感L6的另一端和第六平板电容C6的另一端分别接地，上述两个器件构成第六谐振器。 The sixth coupled line inductance L6 is connected in parallel with the sixth plate capacitor C6, one end of the sixth coupled line inductance L6 is connected with one end of the sixth plate capacitor C6, the other end of the sixth coupled line inductance L6 is connected with the other end of the sixth plate capacitor C6 One end is grounded respectively, and the above two devices form a sixth resonator.
所述第一谐振器、第二谐振器、第三谐振器、第四谐振器、第五谐振器、第六谐振器中的耦合线电感和平板电容均与顶层金属地G1和底层金属地G2平行放置；耦合线电感之间均互不相连，平板电容之间也均互不相连。 The coupled line inductance and plate capacitance in the first resonator, the second resonator, the third resonator, the fourth resonator, the fifth resonator, and the sixth resonator are all connected to the top metal ground G1 and the bottom metal ground G2 Placed in parallel; the coupled line inductors are not connected to each other, and the plate capacitors are also not connected to each other.
第一耦合线电感L1与第六耦合线电感L6是相同的结构，第二耦合线电感L2与第五耦合线电感L5是相同的结构，第三耦合线电感L3与第四耦合线电感L4是相同的结构，第一平板电容C1与第六平板电容C6是相同的结构，第二平板电容C2与第五平板电容C5是相同的结构，第三平板电容C3与第四平板电容C4是相同的结构。 The first coupled line inductance L1 and the sixth coupled line inductance L6 have the same structure, the second coupled line inductance L2 and the fifth coupled line inductance L5 have the same structure, the third coupled line inductance L3 and the fourth coupled line inductance L4 are The same structure, the first plate capacitor C1 and the sixth plate capacitor C6 have the same structure, the second plate capacitor C2 and the fifth plate capacitor C5 have the same structure, the third plate capacitor C3 and the fourth plate capacitor C4 are the same structure.
顶层金属地G1、底层金属地G2、第一耦合线电感L1、第二耦合线电感L2、第三耦合线电感L3、第四耦合线电感L4、第五耦合线电感L5、第六耦合线电感L6和第一平板电容C1、第二平板电容C2、第三平板电容C3、第四平板电容C4、第五平板电容C5、第六平板电容C6均为多层低温共烧陶瓷工艺烧制的器件。 Top metal ground G1, bottom metal ground G2, first coupled line inductance L1, second coupled line inductance L2, third coupled line inductance L3, fourth coupled line inductance L4, fifth coupled line inductance L5, sixth coupled line inductance L6, the first plate capacitor C1, the second plate capacitor C2, the third plate capacitor C3, the fourth plate capacitor C4, the fifth plate capacitor C5, and the sixth plate capacitor C6 are all devices fired by multilayer low temperature co-fired ceramic technology .
本发明与现有技术相比，其显著优点为：本发明的结构体使用了多层介质基板，充分利用了三维多层空间，从而显著减小了元件所需体积，适合于自动化表面贴装生产，并且性能优异。 Compared with the prior art, the present invention has the remarkable advantages that: the structure of the present invention uses a multi-layer dielectric substrate, fully utilizes the three-dimensional multi-layer space, thereby significantly reducing the required volume of components, and is suitable for automatic surface mounting production with excellent performance.
下面结合附图对本发明进行详细描述。 The present invention will be described in detail below in conjunction with the accompanying drawings.
附图说明 Description of drawings
图1是本发明一种具有滤波性能的多层结构体的三维结构主视图。 Fig. 1 is a front view of a three-dimensional structure of a multi-layer structure with filtering performance according to the present invention.
图2是本发明一种具有滤波性能的多层结构体的三维结构侧视图。 Fig. 2 is a side view of a three-dimensional structure of a multi-layer structure with filtering performance according to the present invention.
图3是本发明一种具有滤波性能的多层结构体的三维结构俯视图。 Fig. 3 is a top view of a three-dimensional structure of a multi-layer structure with filtering performance according to the present invention.
图4是本发明一种具有滤波性能的多层结构体的S参数仿真曲线。 Fig. 4 is an S-parameter simulation curve of a multi-layer structure with filtering performance according to the present invention.
图5是本发明一种具有滤波性能的多层结构体的等效电路图。 Fig. 5 is an equivalent circuit diagram of a multi-layer structure with filtering performance according to the present invention.
具体实施方式：Detailed ways:
结合图1、图2、图3，本发明是一种具有滤波性能的多层结构体，采用了多层结构实现，具有带通滤波的功能。 Referring to Fig. 1, Fig. 2 and Fig. 3, the present invention is a multi-layer structure with filtering performance, which is realized by a multi-layer structure and has the function of band-pass filtering.
本发明是一种具有滤波性能的多层结构体，该多层结构体整体是一个陶瓷体，多个电介质层层叠于该陶瓷体中。具体包括顶层金属地G1、底层金属地G2、第一耦合线电感L1、第二耦合线电感L2、第三耦合线电感L3、第四耦合线电感L4、第五耦合线电感L5、第六耦合线电感L6和第一平板电容C1、第二平板电容C2、第三平板电容C3、第四平板电容C4、第五平板电容C5、第六平板电容C6； The present invention is a multi-layer structure with filtering performance. The whole multi-layer structure is a ceramic body, and multiple dielectric layers are stacked in the ceramic body. Specifically, it includes the top metal ground G1, the bottom metal ground G2, the first coupled line inductance L1, the second coupled line inductance L2, the third coupled line inductance L3, the fourth coupled line inductance L4, the fifth coupled line inductance L5, the sixth coupled line The line inductance L6 and the first plate capacitor C1, the second plate capacitor C2, the third plate capacitor C3, the fourth plate capacitor C4, the fifth plate capacitor C5, and the sixth plate capacitor C6;
其中顶层金属地G1、底层金属地G2均为单层平板金属结构，第一耦合线电感L1、第二耦合线电感L2、第三耦合线电感L3、第四耦合线电感L4、第五耦合线电感L5、第六耦合线电感L6均为双层矩形螺旋线圈结构，第一平板电容C1、第二平板电容C2、第三平板电容C3、第四平板电容C4、第五平板电容C5、第六平板电容C6均为双层金属板结构; The top metal ground G1 and the bottom metal ground G2 are single-layer flat metal structures. The first coupled line inductor L1, the second coupled line inductor L2, the third coupled line inductor L3, the fourth coupled line inductor L4, and the fifth coupled line The inductance L5 and the sixth coupled line inductance L6 are double-layer rectangular spiral coil structures, the first plate capacitor C1, the second plate capacitor C2, the third plate capacitor C3, the fourth plate capacitor C4, the fifth plate capacitor C5, the sixth plate capacitor The plate capacitor C6 is a double-layer metal plate structure;
第一耦合线电感L1与第一平板电容C1相并联，第一耦合线电感L1的一端与第一平板电容C1的一端相连，第一耦合线电感L1的另一端和第一平板电容C1的另一端分别接地，上述两个器件构成第一谐振器； The first coupled line inductance L1 is connected in parallel with the first plate capacitor C1, one end of the first coupled line inductance L1 is connected to one end of the first plate capacitor C1, the other end of the first coupled line inductance L1 is connected to the other end of the first plate capacitor C1 One end is grounded respectively, and the above two devices form a first resonator;
第二耦合线电感L2与第二平板电容C2相并联，第二耦合线电感L2的一端与第二平板电容C2的一端相连，第二耦合线电感L2的另一端和第二平板电容C2的另一端分别接地，上述两个器件构成第二谐振器； The second coupled line inductance L2 is connected in parallel with the second plate capacitor C2, one end of the second coupled line inductance L2 is connected with one end of the second plate capacitor C2, the other end of the second coupled line inductance L2 is connected with the other end of the second plate capacitor C2 One end is grounded respectively, and the above two devices form a second resonator;
第三耦合线电感L3与第三平板电容C3相并联，第三耦合线电感L3的一端与第三平板电容C3的一端相连，第三耦合线电感L3的另一端和第三平板电容C3的另一端分别接地，上述两个器件构成第三谐振器； The third coupled line inductance L3 is connected in parallel with the third plate capacitor C3, one end of the third coupled line inductance L3 is connected with one end of the third plate capacitor C3, the other end of the third coupled line inductance L3 is connected with the other end of the third plate capacitor C3 One end is grounded respectively, and the above two devices form a third resonator;
第四耦合线电感L4与第四平板电容C4相并联，第四耦合线电感L4的一端与第四平板电容C4的一端相连，第四耦合线电感L4的另一端和第四平板电容C4的另一端分别接地，上述两个器件构成第四谐振器； The fourth coupled line inductance L4 is connected in parallel with the fourth plate capacitor C4, one end of the fourth coupled line inductance L4 is connected to one end of the fourth plate capacitor C4, the other end of the fourth coupled line inductance L4 is connected to the other end of the fourth plate capacitor C4 One end is grounded respectively, and the above two devices form a fourth resonator;
第五耦合线电感L5与第五平板电容C5相并联，第五耦合线电感L5的一端与第五平板电容C5的一端相连，第五耦合线电感L5的另一端和第五平板电容C5的另一端分别接地。上述两个器件构成第五谐振器； The fifth coupled line inductor L5 is connected in parallel with the fifth plate capacitor C5, one end of the fifth coupled line inductor L5 is connected to one end of the fifth plate capacitor C5, the other end of the fifth coupled line inductor L5 is connected to the other end of the fifth plate capacitor C5 One end is grounded respectively. The above two devices constitute a fifth resonator;
第六耦合线电感L6与第六平板电容C6相并联，第六耦合线电感L6的一端与第六平板电容C6的一端相连，第六耦合线电感L6的另一端和第六平板电容C6的另一端分别接地。上述两个器件构成第六谐振器； The sixth coupled line inductance L6 is connected in parallel with the sixth plate capacitor C6, one end of the sixth coupled line inductance L6 is connected with one end of the sixth plate capacitor C6, the other end of the sixth coupled line inductance L6 is connected with the other end of the sixth plate capacitor C6 One end is grounded respectively. The above two devices constitute a sixth resonator;
第一谐振器、第二谐振器、第三谐振器、第四谐振器、第五谐振器、第六谐振器中的耦合线电感和平板电容均与顶层金属地G1和底层金属地G2平行放置，在同一电介质层上设置了多个耦合线电感和多个平板电容，并且所述多个耦合线电感均互不相连，多个平板电容也均互不相连。 The coupled line inductance and plate capacitance in the first resonator, the second resonator, the third resonator, the fourth resonator, the fifth resonator, and the sixth resonator are placed in parallel with the top metal ground G1 and the bottom metal ground G2 , multiple coupled line inductors and multiple plate capacitors are set on the same dielectric layer, and the multiple coupled line inductors are not connected to each other, and the multiple plate capacitors are also not connected to each other.
第一耦合线电感L1与第六耦合线电感L6是相同的，第二耦合线电感L2与第五耦合线电感L5是相同的，第三耦合线电感L3与第四耦合线电感L4是相同的，第一平板电容C1与第六平板电容C6是相同的，第二平板电容C2与第五平板电容C5是相同的，第三平板电容C3与第四平板电容C4是相同的。 The first coupled line inductance L1 is the same as the sixth coupled line inductance L6, the second coupled line inductance L2 is the same as the fifth coupled line inductance L5, the third coupled line inductance L3 is the same as the fourth coupled line inductance L4 , the first plate capacitor C1 is the same as the sixth plate capacitor C6, the second plate capacitor C2 is the same as the fifth plate capacitor C5, and the third plate capacitor C3 is the same as the fourth plate capacitor C4.
顶层金属地G1、底层金属地G2、第一耦合线电感L1、第二耦合线电感L2、第三耦合线电感L3、第四耦合线电感L4、第五耦合线电感L5、第六耦合线电感L6和第一平板电容C1、第二平板电容C2、第三平板电容C3、第四平板电容C4、第五平板电容C5、第六平板电容C6均为多层低温共烧陶瓷工艺烧制的器件。 Top metal ground G1, bottom metal ground G2, first coupled line inductance L1, second coupled line inductance L2, third coupled line inductance L3, fourth coupled line inductance L4, fifth coupled line inductance L5, sixth coupled line inductance L6, the first plate capacitor C1, the second plate capacitor C2, the third plate capacitor C3, the fourth plate capacitor C4, the fifth plate capacitor C5, and the sixth plate capacitor C6 are all devices fired by multilayer low temperature co-fired ceramic technology .
本发明采用了多层结构实现了滤波性能，其中多层结构采用低温共烧陶瓷工艺实现，该技术与其它多层基板技术相比较，更易于实现多层布线与封装一体化结构，进一步减小体积和重量，提高可靠性，因此该技术可在实现相同指标的前提下显著减小器件体积，提高器件集成度。 The present invention uses a multi-layer structure to realize the filtering performance, wherein the multi-layer structure is realized by low-temperature co-fired ceramic technology. Compared with other multi-layer substrate technologies, this technology is easier to realize the integrated structure of multi-layer wiring and packaging, and further reduces the The volume and weight can improve reliability, so this technology can significantly reduce the volume of the device and improve the integration of the device under the premise of achieving the same index.
本发明具有滤波性能的多层结构体的整体结构示意图如图1所示，整个器件的体积为6.5mm*3.2mm*1.5mm，采用的LTCC套陶瓷介质的相对介电常数为65，介质损耗角正切为0.002，实现多层结构的金属导体采用银，其中每层陶瓷介质基板的厚度为0.01mm，为了提高成品率，层与层之间的距离为0.04mm，连接层与层之间的圆柱通孔高度也为0.04mm。 The overall structure schematic diagram of the multilayer structure with filter performance of the present invention is shown in Figure 1, the volume of the whole device is 6.5mm*3.2mm*1.5mm, the relative permittivity of the LTCC sleeve ceramic medium that adopts is 65, and the dielectric loss The angle tangent is 0.002, and the metal conductor to realize the multi-layer structure is made of silver. The thickness of each layer of ceramic dielectric substrate is 0.01mm. In order to improve the yield, the distance between layers is 0.04mm, and the connection between layers The height of the cylindrical through hole is also 0.04mm.
本发明具有滤波性能的多层结构体的仿真曲线如图4所示：该多层结构体的中心频率为144MHz，通带带宽为24MHz。通带内的插入损耗小于4dB，由于在上、下边带各产生了一个传输零点，使得上、下边带非常陡峭，在DC<f<75 MHz时，带外抑制优于60 dB，260 MHz<f<1.0 GHz时，带外抑制优于60 dB，可见带外抑制度极高。 The simulation curve of the multilayer structure with filtering performance of the present invention is shown in Figure 4: the center frequency of the multilayer structure is 144MHz, and the passband bandwidth is 24MHz. The insertion loss in the passband is less than 4dB. Since a transmission zero point is generated in the upper and lower sidebands, the upper and lower sidebands are very steep. When DC<f<75 MHz, the out-of-band rejection is better than 60 dB, 260 MHz< When f<1.0 GHz, the out-of-band suppression is better than 60 dB, which shows that the out-of-band suppression is extremely high.
综上，本发明提供的具有滤波性能的多层结构体具有体积小、重量轻、选频特性好、集成度高等优点，便于与其它微波器件集成，另外，该多层结构体基于LTCC工艺，具有批量生产成本低的优势，使得所应用的产品具有更好的使用性能，极具市场竞争力，其应用前景非常广阔。 In summary, the multilayer structure with filtering performance provided by the present invention has the advantages of small size, light weight, good frequency selection characteristics, and high integration, and is easy to integrate with other microwave devices. In addition, the multilayer structure is based on LTCC technology. It has the advantage of low mass production cost, which makes the applied products have better performance, is highly competitive in the market, and has a very broad application prospect.
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