CN103917043B - Patterned multi-insulating-material circuit substrate - Google Patents
Patterned multi-insulating-material circuit substrate Download PDFInfo
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- CN103917043B CN103917043B CN201410094878.6A CN201410094878A CN103917043B CN 103917043 B CN103917043 B CN 103917043B CN 201410094878 A CN201410094878 A CN 201410094878A CN 103917043 B CN103917043 B CN 103917043B
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- insulating layer
- circuit substrate
- isolation material
- insulating barrier
- material circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
The invention relates to a patterned multi-insulating-material circuit substrate and belongs to the technical field of printed circuit boards of semiconductor devices. The circuit substrate comprises a metal substrate, wherein a resin insulating layer and a high-heat-conduction insulating layer are formed on the metal substrate, the high-heat-conduction insulating layer serves as a base of a semiconductor component, and the resin insulating layer serves as a base of other electronic components. According to the patterned multi-insulating-material circuit substrate, the heat dissipation performance is remarkably improved, high reliability is achieved, the circuit substrate can be applied to various substrates containing semiconductor chips, for instance, heat dissipation of a CPU and the like in a computer circuit can be improved, heat dissipation of IGBTs and bipolar semiconductor chips in an inverter circuit can be improved, heat dissipation of wireless modules and the like in a wireless communication circuit can be improved, and heat dissipation of management chips in a power source management circuit can be improved.
Description
Technical field
The invention belongs to the technical field of electronic component printed substrate, more particularly, it relates to one kind has
Patterning many isolation material circuit substrate of excellent heat dissipation property.
Background technology
With the development of integrated circuit, Electronic Packaging becomes lighter, thinner, less, with better function, progressively meets the mankind couple
Convenient, comfortable, power pursuit, also puts forward higher requirement to Electronic Packaging simultaneously.The increase of electronic component power consumption
Inevitably result in the raising of circuit caloric value, so that operating temperature constantly rises.In general, in the semiconductor device, temperature
Degree often raises 18 DEG C, and the probability of inefficacy is increased by 2～3 times.Therefore radiating becomes restriction electronic component and develops to high powerization
Bottleneck problem.
Currently, heat dissipation problem has undoubtedly become one of pendulum ultimate challenge in face of designers.On the one hand with
Printed substrate towards high density, in high precision, the continuous development in small-sized multilamellar SMT direction, the installing space of components and parts significantly subtracts
Few；And on the other hand to the power requirement of power component but more and more higher.Little space is high-power to be inevitably generated more
Many heats are assembled, and cause components and parts electric property to decline and even damage.Previous solution is using cooled hardware or pottery
Porcelain functional device radiates, the former itself need big quantity space, and the latter is more because ceramic thermal coefficient of expansion is larger, and can not be formed
Big ceramic insulating layer, and if ceramic insulating layer be more than certain size when solder joint in repeated multiple times cold cycling at due to
Stress easily forms crackle or comes off and lead to Joint failure even easily to cause short circuit to lose efficacy.In addition, with electronic devices and components
Pin more and more participate in radiating it is desirable to conductive layer also will have good heat-sinking capability.Therefore, with packaging density and
Raising to reliability requirement, is considered as from the more preferable base material of heat conductivility and heat-conducting layer.
Current electronic device commonly uses FR4 printed substrate, for electronic device, affects its reliability index
A key factor be exactly components and parts operating temperature.Recorded according to pertinent literature, the crash rate of electronic equipment have 55% be by
Temperature exceedes what the setting of electronic component caused.Temperature is different to the performance impact of all kinds components and parts, common
Components and parts in, temperature is maximum for the impact of semiconductor device.The semiconductor device widely applied in electronic equipment is for example integrated
Amplifier, TTL logic chip, various power supply voltage stabilizing chip etc., its basic component units is all P-N junction, very quick to temperature change
Sense, general temperature often raises 10 DEG C, and reverse leakage current will double.This variation with temperature, just will result directly in product
Often operating point drifts about, and maximum power dissipation declines.Temperature also has a certain impact to the performance parameter of Resistor-Capacitor Unit.Temperature
During rising, thermal noise aggravation in resistance can be caused, resistance deviates nominal value it is allowed to dissipated power declines etc..Shadow to capacitor
Sound is so that the parameters such as capacitance and dielectric loss angle is changed, thus leading to the parameters such as the capacity-resistance time constant in circuit to change
Become, affect the reliability of whole electronic equipment.In order to reduce temperature to the performance impact of components and parts it is necessary to use radiating good
And the high wiring board of reliability.
Content of the invention
In order to solve above-mentioned technical problem, it is an object of the invention to provide a kind of patterning many isolation material circuit base
Plate.Using of the present invention patterning many isolation material circuit substrate not only advantage of lower cost and also have high thermal conductivity,
Resist wear and dependable performance advantage.
Of the present invention patterning many isolation material circuit substrate, including metal basal board it is characterised in that：Described metal
Resin insulating barrier and high heat conductive insulating layer are formed with substrate, and described high heat conductive insulating layer is used as the base of semiconductor components and devices
Seat, described resin insulating barrier is used as the pedestal of other electronic devices and components, and described semiconductor components and devices and other electronics described
Components and parts are electrically connected with by metal connector.
Wherein, described metal basal board have multiple resin insulating barriers and multiple high heat conductive insulating layer；And described resin
It is disposed adjacent between insulating barrier or interval setting；Adjacent or interval setting between described high heat conductive insulating layer；Described resin
It is disposed adjacent or interval setting between insulating barrier and described high heat conductive insulating layer.
Wherein, described metal connector is lead, bulge and/or the bridge material adopting silver, gold or copper.
Wherein, described metal basal board by selected from aluminum, copper, nickel, ferrum, gold, silver, titanium, molybdenum, silicon, magnesium, lead, stannum, indium, gallium or
Their alloy material is made.Preferably, described metal basal board is by copper or copper alloy, aluminum or aluminum alloy, and monocrystal silicon
Or polysilicon etc. makes.
Wherein, through surface treatment procedure, described surface treatment procedure comprises roughening treatment, acid to described metallic matrix
Wash, alkali cleaning, any one or a few in acid etching or alkaline etching operation.
Wherein, described metal base surface is formed with metal or nonmetallic transition zone.
Wherein, described metal base surface is formed with anode oxide film or insullac in its surface through surface treatment
Film.
Wherein, described high heat conductive insulating layer is made up of ceramic material or nonmetallic monocrystal material.
Wherein, described ceramic material is selected from oxide, one kind of nitride, carbide or their complex or several
Kind.
Wherein, described ceramic material is formed by sintering or vacuum coating method, and described vacuum coating method is selected from and steams
The techniques such as plating, sputter, ion plating, reactive sputtering and chemical vapor deposition.
Wherein, the scope of the heat conductivity of described high heat conductive insulating layer is 50～500W/mK, preferably 100～500W/
mK.
Wherein, the thickness of described high heat conductive insulating layer is 20～500 μm, preferably 20～200 μm.
Wherein, described semiconductor components and devices or other electronic devices and components pass through wave soldering, reflow soldering, eutectic welding or
It is connected with plain conductor or metal connecting post using electroconductive binder.
Wherein, the power of described semiconductor components and devices is more than 0.5W, preferably more than 3W, more preferably more than 5W.
Wherein, described resin insulating barrier is the resin cured matter containing thermosetting resin and firming agent.
Wherein, described resin insulating barrier is the resin cured matter containing thermosetting resin, firming agent and inorganic filler.
Wherein, described thermosetting resin is selected from epoxy resin, organic siliconresin, phenolic resin or imide resin
Kind.
Wherein, described inorganic filler be selected from one of silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride or boron nitride or
Several.
Wherein, the thermal conductivity of described resin insulating barrier is more than 0.5W/mK, and preferably thermal conductivity is more than 1.0W/mK, for example
1.0～30W/mK.
Wherein, the thickness of described resin insulating barrier is 20～1000 μm, and preferred thickness range is 20～500 μm.
Compared with prior art, technical scheme has the advantages that：
The present invention, by arranging Ceramic insulator and the insulation resin sheet of different heat conductivitys and unlike material, can carry
Significantly improve for thermal diffusivity and high reliability electronic devices and components encapsulation insulating metal substrate, due to semiconductor device
Performance temperature sensitive, therefore heat conduction and the excellent base of ceramic of heat dispersion are used for semiconductor device, and for it
Its electronic devices and components uses common resin-insulated material, this avoid the fragility mistake that the maximization of ceramic wafer may lead to
Effect, improves the reliability of circuit substrate；In addition the present invention, can be in the table of metal basal board also by the process to metal basal board
Face forms the high pressure resistant insulating barrier puncturing, the anodic oxide coating of such as special handling or paint film layer, can improve encapsulation further
Density and the reliability of encapsulation.Circuit substrate of the present invention can be used for the various matrixes containing semiconductor chip, for example
The radiating of CPU etc. in computer circuits can be improved, in raising inverter circuit, the semiconductor chip such as IGBT bipolar dissipates
Heat, improves the radiating of wireless module etc. in wireless communication line, improves the radiating of managing chip in electric power management circuit.
Brief description
Fig. 1 is the many isolation material of the patterning with semiconductor components and devices and other electronic devices and components of the present invention
The structural representation of circuit substrate.
Specific embodiment
Patterning many isolation material circuit substrate of the present invention, including metal basal board, described metal basal board is formed
There are resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is used as the pedestal of semiconductor components and devices, described tree
Fat insulating barrier is used as the pedestal of other electronic devices and components, and described semiconductor components and devices is passed through with other electronic devices and components described
Metal connector is electrically connected with.Described metal connector is lead, bulge and/or the bridge material adopting silver, gold or copper.Specifically
For, for example can be electrically connected using solder, solder brazing, high-termal conductivity binding agent etc., preferably solder.At this
Semiconductor chip described in invention can be for example IGBT bipolar chip, cpu chip, wireless telecommunications core in inverter circuit
Piece, managing chip or other semiconductor chip.In the present invention, the power of described semiconductor components and devices is more than 0.5W, preferably
For more than 3W, more preferably more than 5W, certainly discounting for economic factor, circuit substrate of the present invention can also be applied
In the semiconductor components and devices for below 0.5W for the power.Semiconductor element described in the present invention can also be great power LED core
Piece, the power of for example single LEDs chip is more than 1W it is therefore preferable to the chip of more than 3W.And described LED refers to light-emitting diode
Pipe, it refers to the luminescent diode component with the contact area powered to diode.Semiconductor light emitting two pole of multi-form
Pipe can be formed by the PN junction (III-V quasiconductor) of one or more group-III element and one or more V group elements.Available
Example in the III-V semi-conducting material of LED includes：Nitride, such as gallium nitride or InGaN；And phosphide such as phosphatization
Indium gallium.Other types of III-V material can also be used, can also be using the inorganic material of other races.
Wherein, described metal basal board have multiple resin insulating barriers and multiple high heat conductive insulating layer；And described resin
It is disposed adjacent between insulating barrier or interval setting；Adjacent or interval setting between described high heat conductive insulating layer；Described resin
It is disposed adjacent or interval setting between insulating barrier and described high heat conductive insulating layer.
In the present invention, described metal basal board can by selected from aluminum, copper, nickel, ferrum, gold, silver, titanium, molybdenum, silicon, magnesium, lead, stannum,
Indium, gallium or their alloy material are made.Preferably, described metal basal board is by copper or copper alloy, aluminum or aluminum alloy, with
And monocrystal silicon or polysilicon etc. make.In the present invention, the thickness of metal basal board can be selected according to being actually needed, for example
Can be from 0.1 millimeter to tens of milliseconds.Described substrate preferably uses copper or copper alloy in the present invention.Specifically preferably miscellaneous
Matter is few, the aluminum of more than 99 mass % purity.For example, it is preferable to the copper of 99.99wt%, 99.0% bronze medal etc..Or, based on different mesh
, also can add other alloying elements.The cupromanganese of appropriate manganese for example can be added, to improve its corrosion resisting property.Except manganese
In addition, other solid solubility limit high addition element also may be selected.
Preferably, through surface treatment procedure, described surface treatment procedure can comprise to be roughened described metallic matrix
The various operation such as process, pickling, alkali cleaning, acid etching or alkaline etching.As the exemplary process for forming coarse surface, can
With enumerate metal basal board is implemented successively with the roughened process of mechanicalness, alkaline etching is processed, using sour cleaning treatment with employ
The methods such as the roughened process of electrochemistry of electrolyte；To metal basal board implement the roughened process of multiple mechanicalness, alkaline etching process,
Method using sour dirty removing processing and the roughened process of electrochemistry employing different electrolyte；But the present invention is not limited to
These.Can be mineral acid and/or organic acid as acid, described mineral acid can be for example sulphuric acid, hydrochloric acid, nitric acid, phosphoric acid
Deng；Described organic acids are as being carboxylic acid or sulfonic acid, such as formic acid, acetic acid, tartaric acid, oxalic acid, malic acid, ascorbic acid
And benzoic acid etc..Can be for example alkali-metal hydroxide as conventional alkali, such as sodium hydroxide or potassium hydroxide, separately
Tetramethylammonium hydroxide, trimethyl can also be used outward（Ethoxy）The organic bases such as ammonium hydroxide.In order to reduce pickling or alkaline etching
Carve the etch quantity of metal matrix material in processing procedure, described aqueous slkali or acid solution can contain anticorrodent, in addition
Other component such as surfactant and chelating agen can also be contained.Additionally, described surface treatment, can also be described
Metal base surface forms the paint film layer of anode oxide film or electric insulation, thus improving the resistance to of caking property and described metallic matrix
High-voltage breakdown intensity.
In the present invention, the scope as the heat conductivity of the described high heat conductive insulating layer in the present invention is 50～500W/
MK, preferably, the scope of the heat conductivity of described high heat conductive insulating layer is 100～500W/mK.Described high heat conductive insulating layer
Thickness be preferably 20～500 μm, it is highly preferred that its thickness range be 20～200 μm.Described high heat conductive insulating layer can be by making pottery
Ceramic material or nonmetallic monocrystal material are made, can select as ceramic material but be not limited to zinc oxide, beryllium oxide, aluminium oxide,
Titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride.Institute in the present invention
The ceramic material stated by the ceramic wafer that fire of cutting and can be welded on metal basal board of the present invention, described welding
Method can be for example the method for soldering, such as solder, solder brazing or active soldering etc..Ceramic material described in the present invention
Material can also be prepared by being formed in situ method, for example, pass through vacuum coating method, the physical vapour deposition (PVD) for example commonly used
Method or chemical gaseous phase depositing process prepare.As physical vapour deposition (PVD) example be for example deposited with, sputter or ion plating sink
Long-pending method.Wherein, vacuum evaporation deposition has the advantages that simple and easy, processing ease, film forming speed be fast and efficiency high, is thin
Most widely used technique in film preparation.Its principle is under vacuum conditions, to material to be evaporated, the such as pottery in the present invention
Ceramic material provides enough heats to obtain vapour pressure necessary to evaporation.At a proper temperature, evaporation particle is in Metal Substrate
Condense on body, so both can achieve and be evaporated in vacuo thin film deposition.Resistance heating for example can be selected to be deposited with as the example being deposited with,
Flicker evaporation, electron beam evaporation, laser evaporation, arc evaporation or radio frequency heating evaporation etc..Sputtering refers to there is enough high energy
The ion bom bardment target material surface of amount makes atomic emissions therein out, and sputter procedure actually incoming particle (usually ion) leads to
Cross and target collision, carry out a series of process of energy exchangies, and the 95% of projectile energy is used for encouraging the lattice heat in target
Vibration, only 5% about energy is to pass to sputtered atom.Example as sputtering sedimentation for example passes through, by medium-high frequency magnetic
Control sputtering ceramic target is simultaneously deposited in described metallic substrate surfaces, sputters obtained thin film and is well combined with matrix, and
Thin film purity is higher, compactness preferable, and thickness is controlled, is obtained in that thin film in uniform thickness.Example as sputtering sedimentation
Son for example can select aura d.c. sputtering, magnetron sputtering, radio-frequency sputtering, ion beam sputtering, reactive sputtering etc..In addition, it is described
Ceramic material can also be obtained by ion electroplating method deposition.Ion plating refers under vacuum, make gas using gas discharge
Body or by evaporant partial ionization, produces ion bombardment effects, evaporant or reactant are deposited on substrate the most at last.As
Chemical gaseous phase depositing process for example can adopt general chemical gaseous phase depositing process or plasma enhanced chemical vapor deposition
Method.
In the present invention, the type according to other electronic devices and components, the thermal conductivity of described resin insulating barrier be 0.5W/mK with
On, it is highly preferred that its thermal conductivity is more than 1.0W/mK, for example, can be the scope of 0.5～30W/mK.So can be by other
Heat diffusion produced by electronic devices and components or plain conductor is fallen and is not built up.The thickness of described resin insulating barrier is preferred
For 20～500 μm, it is highly preferred that its thickness range is 20～200 μm.Because thickness is if less than 20 μm, then electrical insulating property becomes
Obtain insufficient, if greater than 500 μm, then thermal diffusivity may be impaired, and heat dispersion will significantly reduce.And described resin insulating barrier
It is the resin cured matter containing thermosetting resin and firming agent.Preferably, described resin insulating barrier is containing thermosetting tree
The resin cured matter of fat, firming agent and inorganic filler.Additionally, in the hardening resin composition for forming insulating barrier, also
Can also use catalyst, silane coupling agent, metatitanic acid lipid coupling agent, stabilizer and curing accelerator as needed
Deng.
As thermosetting resin, for example, can select epoxy resin, organic siliconresin, phenolic resin and imide resin
Deng.Epoxy resin is preferably used from the point of view of heat conductivity.And as epoxy resin, preferably use and can obtain relatively inexpensively
Difunctionality epoxy resin, e.g., bisphenol A diglycidyl ether, Bisphenol F diglycidyl ether, bisphenol-S diglycidyl ether,
Resorcinolformaldehyde resin, hexahydro bisphenol A diglycidyl ether, polypropylene glycol diglycidyl ether, neopentyl glycol two contract
Water glycerin ether, o-phthalic acid diglycidyl ester, dimer acid diglycidyl ester etc..
As firming agent, preferably use the anhydrides with excellent engineering propertiess and electrical property or phenol, and be
Guarantee engineering propertiess and the dielectric property of insulating barrier, be preferably added to polyaddition type firming agent.As polyaddition type firming agent, preferably make
With can be relatively inexpensive the anhydrides that obtain or phenol, anhydrides include phthalic anhydride, tetrahydrochysene methylphthalic acid
Acid anhydride, hexahydrophthalic anhydride, trimellitic anhydride, methyl norbornene dioic anhydride etc., phenol includes linear phenol-aldehyde resin, neighbour
Cresol novolaks, Bisphenol-A type linear phenolic resin etc..
Additionally, for the curing reaction promoting described thermosetting and polyaddition type firming agent, catalyst can be added.As urging
Agent, preferably imidazoles, such as 2-methylimidazole, 2- undecyl imidazole, 2- heptadecyl imidazole, 1,2- methylimidazole, 2-
Methyl -4-methylimidazole, 2- phenylimidazole, 2- phenyl -4-methylimidazole, 1 benzyl 2 methyl imidazole, 1- benzyl -2- phenyl
Imidazoles, 2,3- dihydro -1H- pyrrolo- [1,2-a] benzimidazole, 2- phenyl -4,5- hydroxymethyl-imidazole etc., can arbitrarily change
Its addition is to obtain desired curing rate.
As inorganic filler, preferably there is electrical insulating property and the good inorganic filler of heat conductivity, for example, can use two
Silicon oxide, aluminium oxide, aluminium nitride, silicon nitride, boron nitride etc..For keeping suitable mobility, the inorganic filler in insulating barrier
Content preferably 5～15wt%.The granularity of inorganic filler preferably comprises mean diameter and is 0.6 μm～2.4 μm and 5 μm～20 μ
Two kinds of granularities of m.By mixing corase particleses larger for mean diameter and the less micropartical of mean diameter, each with being used alone
Compare during microgranule, can achieve more fillings, be obtained in that good heat conductivity.Additionally, shape of particle can be pulverize,
Spherical or lepidiod.
Metal pattern circuit is also contained on circuit substrate of the present invention, described metal pattern circuit is as needed
May be formed on described resin insulating barrier or described high heat conductive insulating layer, described metal pattern circuit can be by being used for shape
The hardening resin composition slurry becoming insulating barrier carries out pattern printing using methods such as silk screen printings on metallic substrates, heating
After forming semi-cured state afterwards, paste metal forming, afterwards, heated, the method forming substantially fully cured state；Or
Person, using the lamellar that insulating barrier is processed into semi-cured state in advance, utilizes hot-press arrangement to make it electric with for forming metal pattern
The method of metal forming integration on road etc..As the forming method of metal pattern circuit, for example can be using in advance on metal foil
Predetermined portion painting erosion resistant agent layer so that it is solidified after, using wet etching using conventional copper chloride, hydrogen peroxide and sulphuric acid
The corrosion of the caustic such as mixture；Dry-etching method, the dry ecthing work for example carrying out additionally can be utilized using sputter gas
Skill.
As shown in Figure 1, be great power LED photo engine of the present invention a typical example（But the present invention's
The scope that protection domain is limited by the claim checked and approved is defined）, described patterning many isolation material circuit substrate is arranged
There are semiconductor components and devices and other electronic devices and components, it includes metal basal board 10, described metal basal board 10 is formed with resin exhausted
It is provided with metal pattern circuit 30 and semiconductor element on edge layer 20 and high heat conductive insulating layer 25, and described high heat conductive insulating layer 25
Device 40, described resin insulating barrier 20 is provided with metal pattern circuit 30 and other electronic devices and components 50, and described partly leads
Volume elements device 40 can be electrically connected with by metal connector 60 with other electronic devices and components 50 described.Described metal connector is
Using the lead of silver, gold or copper, bulge and/or bridge material.Specifically, for example can be led using solder, solder brazing, height
Hot binding agent etc. being electrically connected, preferably solder.Described semiconductor chip can be for example inversion in the present invention
IGBTbipolar chip, cpu chip, wireless communications chips, managing chip or other semiconductor chip in device circuit.
Metal basal board and anodic alumina films
Described metal basal board is chosen as aluminum plate foundation bottom in the present embodiment, the fine aluminium of such as 99.99wt%, and described
Aluminum plate foundation is formed with anodic alumina films on bottom；The thickness at described aluminum plate foundation bottom is 2～20mm, and the thickness of anodic alumina films is
10～20 μm；The insulation endurance of described anodic alumina films is more than 1000 hours, and described insulation endurance refers to
50 DEG C, the DC voltage of 100V is applied under conditions of 85%RH on anodic alumina films, and resistance value is dropped to 106Ω with
Under time.
The preparation method of described anode oxide film is as follows：First aluminium sheet is carried out and scale removal, then in citric acid
Carry out anodized, described aqueous citric acid solution contains in aqueous solution：The citric acid of 20～35g/L, the DL- of 3～5g/L
Cysteine, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L；Liquid temperature be 10～20 DEG C, electric current density be
0.5～1A/dm2, electrolysis process 20～30min.Using above-mentioned anode oxidation method, due to molten as processing using citric acid
Liquid, and with the addition of appropriate hydrogen peroxide and DL- cysteine wherein, enable to aluminum ions in anodized
In liberal supply such that it is able to obtain densification anodic alumina films, thickness be 10 μm and above under conditions of, even without
Sealing pores can meet the requirement that insulation endurance is more than 1000 hours.
Embodiment 1
The preparation method of the anode oxide film described in the present embodiment is as follows：First aluminium sheet is carried out and scale removal, then
Carry out anodized in aqueous citric acid solution, described aqueous citric acid solution contains：The citric acid of 20g/L, the DL- of 3g/L
Cysteine, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 3g/L；Liquid temperature be 10 DEG C, electric current density be 1A/dm2, at electrolysis
Reason 20min.The dense anodic oxide aluminium film insulation endurance obtaining is more than 1000 hours.
Embodiment 2
The preparation method of the anode oxide film described in the present embodiment is as follows：First aluminium sheet is carried out and scale removal, then
Carry out anodized in aqueous citric acid solution, described aqueous citric acid solution contains：The citric acid of 30g/L, the DL- of 4g/L
Cysteine, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, at electrolysis
Reason 20min.The dense anodic oxide aluminium film insulation endurance obtaining is more than 1000 hours.
Embodiment 3
The preparation method of the anode oxide film described in the present embodiment is as follows：First aluminium sheet is carried out and scale removal, then
Carry out anodized in aqueous citric acid solution, described aqueous citric acid solution contains：The citric acid of 35g/L, the DL- of 5g/L
Cysteine, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L；Liquid temperature be 10 DEG C, electric current density be 1A/dm2, at electrolysis
Reason 30min.The dense anodic oxide aluminium film insulation endurance obtaining is more than 1500 hours.
Comparative example 1
Pickling descaling is carried out to aluminium sheet, then carries out anodized in oxalic acid solution, contain in described oxalic acid solution
There are the oxalic acid of 35g/L, the oxalic acid aluminium of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 30min；Then exist
Carry out sealing treatment, the tetraboric acid of the boric acid containing 0.5mol/L and 0.2mol/L in described boric acid aqueous solution in boric acid aqueous solution
Sodium；Sealing of hole condition is 20 DEG C of liquid temperature, electric current density 1A/dm2, electrolytic processing time 5 minutes, its insulation endurance is 300～
500 hours.
Comparative example 2
Pickling descaling is carried out to aluminium sheet, then carries out anodized in sulfuric acid solution, contain in described sulfuric acid solution
There are the oxalic acid of 35g/L, the aluminum sulfate of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 30min；Then exist
Carry out sealing treatment, the tetraboric acid of the boric acid containing 0.5mol/L and 0.2mol/L in described boric acid aqueous solution in boric acid aqueous solution
Sodium；Sealing of hole condition is 20 DEG C of liquid temperature, electric current density 1A/dm2, electrolytic processing time 5 minutes, its insulation endurance is 250～
400 hours.
High heat conductive insulating layer
In the present invention, the scope of the heat conductivity of described high heat conductive insulating layer is 50～500W/mK.Described high heat conduction is exhausted
Edge layer thickness range is 20～500 μm, for example, 50 μm.Described high heat conductive insulating layer can be by ceramic material or nonmetallic monocrystalline
Material is made.Can select as ceramic material but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide,
Silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride.Ceramic material described in the present invention can lead to
Cross and cut the ceramic wafer fired and be welded on metal basal board of the present invention, described welding method can be for example soldering
Method, such as solder, solder brazing or active soldering etc., preferably use active soldering, the composition of described active soldering is for example
The Si of Al, 3.00wt% of Ti, 2.00wt% of the 2.25wt% and Cu of surplus can be selected；For example can select 1.25wt%'s
The Cu of Ti, 32.250wt% and Ag of surplus；The Cu of In, 27.25wt% of Ti, 12.50wt% of 1.25wt% for example can be selected
Ag with surplus.Additionally, described high heat conductive insulating layer can also be using evaporation, sputtering plating or reactive ion plating and chemical gas
The method mutually depositing prepares, for example with the artificial Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017 of application, Publication No.
CN103354221A、CN103353065A、CN103354219A、CN103354222A、CN103354698A、
CN103354220A、CN103354269A、CN103354697A、CN103354699A、CN103354254A、
CN103327736A, CN103327735A, CN103325921A, CN103338588A, or notification number be CN203340413U,
CN203339213U、CN203339139U、CN203340409U、CN203340407U、CN203340408U、
Preparation method described in CN203339224U, CN203336288U, CN203339140U and CN203339145U, and above-mentioned
Document is recorded here, as reference.
Resin insulating barrier
In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and described insulation resin
The thickness range of layer is preferably 20～500 μm.
Described resin insulating barrier is by the hardening resin composition shape containing thermosetting resin, firming agent and inorganic filler
Become, additionally, in the hardening resin composition for forming insulating barrier, other components can also can also be used as needed
Deng.Formation condition for example can solidify 30～180 seconds under conditions of 160～180 DEG C.Preferably, described curable
Resin combination contain the Bisphenol F diglycidyl ether of 55～60wt%, the VTES of 12.5～15.0wt%,
Benzene olefin(e) acid -2- the hydroxy methacrylate of 8.0～10.0wt%, the TSIM of 3.2～5.0wt%, the adjacent benzene two of 2.5～3.0wt%
Formic anhydride, the 2,6 ditertiary butyl p cresol of 0.5～1.0wt%, and the alumina particulate that the mean diameter of 3～8wt% is 2.0 μm
And the alumina particulate that the mean diameter of 3～8wt% is 5.0 μm.
Embodiment 4
Hardening resin composition described in the present embodiment contains the Bisphenol F diglycidyl ether of 55wt%, 15.0wt%
VTES, the benzene olefin(e) acid -2- hydroxy methacrylate of 10.0wt%, the TSIM of 5.0wt%, the neighbour of 2.5wt%
Phthalate anhydride, the 2,6 ditertiary butyl p cresol of 1.0wt%, and the alumina particulate that the mean diameter of 5.5wt% is 2.0 μm with
And the alumina particulate that the mean diameter of 6.0wt% is 5.0 μm.When the resin insulating barrier thickness of preparation is 50 μm, record its thermal conductivity
Rate is 20～25W/mK.
Embodiment 5
Hardening resin composition described in the present embodiment contains the Bisphenol F diglycidyl ether of 60wt%, 12.5wt%
VTES, the benzene olefin(e) acid -2- hydroxy methacrylate of 8wt%, the TSIM of 3.2wt%, the adjacent benzene of 3.0wt%
Dicarboxylic acid anhydride, the 2,6 ditertiary butyl p cresol of 1.0wt%, and alumina particulate that the mean diameter of 6.3wt% is 2.0 μm and
The mean diameter of 6.0wt% is 5.0 μm of alumina particulate.When the resin insulating barrier thickness of preparation is 50 μm, record its thermal conductivity
For 22～26W/mK.
Embodiment 6
Hardening resin composition described in the present embodiment contains the Bisphenol F diglycidyl ether of 58wt%, the second of 15wt%
Thiazolinyl triethoxysilane, the benzene olefin(e) acid -2- hydroxy methacrylate of 10wt%, the TSIM of 5wt%, the O-phthalic of 3.0wt%
Anhydride, the 2,6 ditertiary butyl p cresol of 1.0wt%, and alumina particulate that the mean diameter of 4wt% is 2.0 μm and 4wt%
Mean diameter is 5.0 μm of alumina particulate.Preparation resin insulating barrier thickness be 50 μm when, record its thermal conductivity be 18～
22W/mK.
Embodiment 7
Hardening resin composition described in the present embodiment contains the 2- first of the Bisphenol F diglycidyl ether of 78wt%, 5wt%
Base imidazoles, the phthalic anhydride of 3.0wt%, the 2,6 ditertiary butyl p cresol of 1.0wt%, and the mean diameter of 6.5wt% is
2.0 μm of alumina particulate and the alumina particulate that the mean diameter of 6.5wt% is 5.0 μm.The resin insulating barrier thickness of preparation
During for 50 μm, recording its thermal conductivity is 15～20W/mK.
Resin insulating barrier described in the present invention, in addition to needing to meet required thermal conductivity, also should have excellent resistance to
Thermochromism.In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition,
In 170 DEG C, 8N/mm2And hardening time is to be processed into the disk that a diameter of 50mm × thickness is 3mm under conditions of 120 seconds to make
For sample, then place 24 hours under conditions of 150 DEG C, its resistance to thermochromism using perusal, find embodiment 4-6 institute
The sample stated is found metachromatism, and the slightly variable color of the sample described in embodiment 7 or there occurs variable color.
Metal pattern circuit
According to actual needs, in described resin insulating barrier, or in described resin insulating barrier and described high heat conduction
Insulating barrier has been respectively formed on metal pattern circuit.Described edge layer can form conductive copper films by bonding or pressing Copper Foil,
Or can be by sputtering, chemical plating（Need to be activated in advance）Form copper film.For example, 2～5 μm of the thickness of described copper film
Thickness, then coats photoresist on carrying described copper film, then carries out photoetching using metal lithographic mask on litho machine, then through aobvious
Shadow forms metal pattern circuit, or, directly form the figure of conductive metal layer using the method for silk screen printing；Toasted solidification
Afterwards, then with wet etching process described aluminium lamination is etched, after etching, can get described metal pattern circuit.
Industrial applicibility
Circuit substrate of the present invention, has improved heat dispersion and reliability, can apply to various containing partly leading
The matrix of body chip, for example, can improve the radiating of CPU etc. in computer circuits, improves IGBT bipolar in inverter circuit
Deng the radiating of semiconductor chip, improve the radiating of wireless module etc. in wireless communication line, improve in electric power management circuit and manage
The radiating of chip.
For the ordinary skill in the art, specific embodiment simply combines accompanying drawing and has carried out example to the present invention
Property description it is clear that the present invention implements and is not subject to the restrictions described above, as long as employ the method for the present invention design and skill
The improvement of the various unsubstantialities that art scheme is carried out, or the not improved design by the present invention and technical scheme directly apply to it
Its occasion, all within protection scope of the present invention.
Claims (12)
1. a kind of patterning many isolation material circuit substrate, including metal basal board it is characterised in that：Formed on described metal basal board
There are resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is used as the pedestal of semiconductor components and devices, described height
The scope of the heat conductivity of thermally conductive insulating layer is 50～500W/mK；Described resin insulating barrier is used as the base of other electronic devices and components
Seat, and described semiconductor components and devices is electrically connected with by metal connector with other electronic devices and components described；Described Metal Substrate
Plate is chosen as aluminum plate foundation bottom, is formed with anodic alumina films on described aluminum plate foundation bottom；The thickness at described aluminum plate foundation bottom be 2～
20mm, the thickness of anodic alumina films is 10～20 μm；The insulation endurance of described anodic alumina films is more than 1000 hours,
Described insulation endurance refers to apply the unidirectional current of 100V under conditions of 50 DEG C, 85%RH on anodic alumina films
Pressure, and resistance value is dropped to 106The time of below Ω；The preparation method of described anode oxide film is as follows：First to aluminium sheet
It is carried out and scale removal, in aqueous citric acid solution, then carries out anodized, described aqueous citric acid solution contains：20～
The citric acid of 35g/L, the DL-cysteine of 3～5g/L, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L；?
Liquid temperature is 10～20 DEG C, electric current density is 0.5～1A/dm2, electrolysis process 20～30min.
2. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Have on described metal basal board
There are multiple resin insulating barriers and multiple high heat conductive insulating layer；And it is disposed adjacent or is spaced between described resin insulating barrier and set
Put；Adjacent or interval setting between described high heat conductive insulating layer；Between described resin insulating barrier and described high heat conductive insulating layer
It is disposed adjacent or interval setting.
3. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Described metal connector is
Using the lead of silver, gold or copper, bulge and/or bridge material.
4. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Described high heat conductive insulating layer
It is made up of ceramic material or nonmetallic monocrystal material.
5. according to claim 4 patterning many isolation material circuit substrate it is characterised in that：Described ceramic material is selected from
Oxide, nitride, carbide or their complex one or more.
6. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Described high heat conductive insulating layer
Thickness be 20～500 μm.
7. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Described semiconductor components and devices
Or other electronic devices and components pass through wave soldering, reflow soldering, eutectic welding or use electroconductive binder and plain conductor or gold
Belong to connecting post to connect.
8. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Described resin insulating barrier
Thermal conductivity is 0.5W/mK～30W/mK.
9. according to claim 8 patterning many isolation material circuit substrate it is characterised in that：Described resin insulating barrier
Thickness is 20～500 μm.
10. according to claim 1 patterning many isolation material circuit substrate it is characterised in that：Described resin insulating barrier
It is the resin cured matter containing thermosetting resin, firming agent and inorganic filler.
11. according to claim 10 patterning many isolation material circuit substrates it is characterised in that：Described inorganic filler choosing
From one or more of silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride or boron nitride.
12. according to claim 1 patterning many isolation material circuit substrates it is characterised in that：Described semiconductor element device
Part is IGBT bipolar chip, cpu chip in inverter circuit, or wireless communications chips.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410094878.6A CN103917043B (en) | 2014-03-14 | 2014-03-14 | Patterned multi-insulating-material circuit substrate |
| PCT/CN2014/077369 WO2015135249A1 (en) | 2014-03-14 | 2014-05-13 | Patterned multi-insulating material circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410094878.6A CN103917043B (en) | 2014-03-14 | 2014-03-14 | Patterned multi-insulating-material circuit substrate |
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| Publication Number | Publication Date |
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| CN103917043A CN103917043A (en) | 2014-07-09 |
| CN103917043B true CN103917043B (en) | 2017-02-22 |
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| WO (1) | WO2015135249A1 (en) |
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| CN105344574A (en) * | 2015-12-15 | 2016-02-24 | 苏州天孚光通信股份有限公司 | Coating insulation process of optical communication receiving and transmitting module |
| CN108990254B (en) * | 2017-06-01 | 2021-04-16 | 瑷司柏电子股份有限公司 | Built-in vertical heat dissipation ceramic block printed circuit board and circuit assembly with the same |
| CN108735890A (en) * | 2018-05-25 | 2018-11-02 | 张琴 | Quasi- air-tightness surface acoustic wave device encapsulating structure and production method |
| TWI672711B (en) | 2019-01-10 | 2019-09-21 | 健策精密工業股份有限公司 | Insulated metal substrate and manufacturing method thereof |
| US11224118B2 (en) | 2019-12-17 | 2022-01-11 | Saft America | Bussing and printed circuit board integration with power electronics |
| WO2021195871A1 (en) * | 2020-03-30 | 2021-10-07 | 华为技术有限公司 | Embedded substrate, circuit board assembly, and electronic device |
| TWI831247B (en) * | 2022-06-16 | 2024-02-01 | 先豐通訊股份有限公司 | Power module and method for manufacturing the same |
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| JPH04114454A (en) * | 1990-09-04 | 1992-04-15 | Sumitomo Electric Ind Ltd | wiring board |
| JPH04180689A (en) * | 1990-11-15 | 1992-06-26 | Matsushita Electric Works Ltd | Mounting board of power device |
| CN101001501A (en) * | 2006-01-09 | 2007-07-18 | 晶元光电股份有限公司 | Hybrid Composite Substrate |
| CN100496188C (en) * | 2006-05-16 | 2009-06-03 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN101355846A (en) * | 2007-07-24 | 2009-01-28 | 千如电机工业股份有限公司 | Base material heat transfer and radiation structure |
| ATE516692T1 (en) * | 2008-03-14 | 2011-07-15 | Asetronics Ag | INSULATED METAL SUBSTRATE WITH A METAL IMPLANT |
| CN103338588B (en) * | 2013-06-04 | 2016-04-20 | 苏州晶品光电科技有限公司 | High heat conductive insulating metal base printed circuit board |
| CN103327735B (en) * | 2013-06-04 | 2015-12-23 | 苏州晶品光电科技有限公司 | High heat conductive insulating metal base printed circuit board |
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| CN103917043A (en) | 2014-07-09 |
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