CN103917043A - Patterned multi-insulating-material circuit substrate - Google Patents
Patterned multi-insulating-material circuit substrate Download PDFInfo
- Publication number
- CN103917043A CN103917043A CN201410094878.6A CN201410094878A CN103917043A CN 103917043 A CN103917043 A CN 103917043A CN 201410094878 A CN201410094878 A CN 201410094878A CN 103917043 A CN103917043 A CN 103917043A
- Authority
- CN
- China
- Prior art keywords
- circuit substrate
- insulate
- insulating layer
- material circuit
- high heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 239000011810 insulating material Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 229920005989 resin Polymers 0.000 claims abstract description 59
- 239000011347 resin Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 38
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- 238000000059 patterning Methods 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 229910010293 ceramic material Inorganic materials 0.000 claims description 14
- 238000011282 treatment Methods 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011256 inorganic filler Substances 0.000 claims description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 9
- 238000004381 surface treatment Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002585 base Substances 0.000 claims description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000005554 pickling Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 238000004891 communication Methods 0.000 abstract description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 39
- 239000010408 film Substances 0.000 description 27
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 18
- 239000000243 solution Substances 0.000 description 15
- 238000012545 processing Methods 0.000 description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- 239000011342 resin composition Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- XUJNEKJLAYXESH-UHFFFAOYSA-N Cysteine Chemical compound SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 238000009413 insulation Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 8
- -1 organic siliconresin Polymers 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 6
- XUCHXOAWJMEFLF-UHFFFAOYSA-N bisphenol F diglycidyl ether Chemical compound C1OC1COC(C=C1)=CC=C1CC(C=C1)=CC=C1OCC1CO1 XUCHXOAWJMEFLF-UHFFFAOYSA-N 0.000 description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 6
- 239000004327 boric acid Substances 0.000 description 6
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 6
- 235000006408 oxalic acid Nutrition 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 229940078469 dl- cysteine Drugs 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- ZUGAOYSWHHGDJY-UHFFFAOYSA-K 5-hydroxy-2,8,9-trioxa-1-aluminabicyclo[3.3.2]decane-3,7,10-trione Chemical compound [Al+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ZUGAOYSWHHGDJY-UHFFFAOYSA-K 0.000 description 4
- YKFRUJSEPGHZFJ-UHFFFAOYSA-N N-trimethylsilylimidazole Chemical compound C[Si](C)(C)N1C=CN=C1 YKFRUJSEPGHZFJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 150000008064 anhydrides Chemical class 0.000 description 4
- 239000010407 anodic oxide Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 4
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2-methyl-4-methylimidazole Natural products CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N Bisphenol A Natural products C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910021538 borax Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229940015043 glyoxal Drugs 0.000 description 2
- 235000019580 granularity Nutrition 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004328 sodium tetraborate Substances 0.000 description 2
- 235000010339 sodium tetraborate Nutrition 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- URJFKQPLLWGDEI-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=[C]N1CC1=CC=CC=C1 URJFKQPLLWGDEI-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- RUFZNDNBXKOZQV-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrolo[1,2-a]benzimidazole Chemical compound C1=CC=C2N(CCC3)C3=NC2=C1 RUFZNDNBXKOZQV-UHFFFAOYSA-N 0.000 description 1
- DGXAGETVRDOQFP-UHFFFAOYSA-N 2,6-dihydroxybenzaldehyde Chemical compound OC1=CC=CC(O)=C1C=O DGXAGETVRDOQFP-UHFFFAOYSA-N 0.000 description 1
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- KUAUJXBLDYVELT-UHFFFAOYSA-N 2-[[2,2-dimethyl-3-(oxiran-2-ylmethoxy)propoxy]methyl]oxirane Chemical compound C1OC1COCC(C)(C)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- RMDKEBZUCHXUER-UHFFFAOYSA-N 4-methylbicyclo[2.2.1]hept-2-ene Chemical compound C1CC2C=CC1(C)C2 RMDKEBZUCHXUER-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- UOJIFOZIWVKHNW-UHFFFAOYSA-M ethoxy(trimethyl)azanium;hydroxide Chemical compound [OH-].CCO[N+](C)(C)C UOJIFOZIWVKHNW-UHFFFAOYSA-M 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
The invention relates to a patterned multi-insulating-material circuit substrate and belongs to the technical field of printed circuit boards of semiconductor devices. The circuit substrate comprises a metal substrate, wherein a resin insulating layer and a high-heat-conduction insulating layer are formed on the metal substrate, the high-heat-conduction insulating layer serves as a base of a semiconductor component, and the resin insulating layer serves as a base of other electronic components. According to the patterned multi-insulating-material circuit substrate, the heat dissipation performance is remarkably improved, high reliability is achieved, the circuit substrate can be applied to various substrates containing semiconductor chips, for instance, heat dissipation of a CPU and the like in a computer circuit can be improved, heat dissipation of IGBTs and bipolar semiconductor chips in an inverter circuit can be improved, heat dissipation of wireless modules and the like in a wireless communication circuit can be improved, and heat dissipation of management chips in a power source management circuit can be improved.
Description
Technical field
The invention belongs to the technical field of electronic component printed substrate, in particular, the present invention relates to a kind of patterning with excellent heat dissipation property material circuit substrate that insulate more.
Background technology
Along with the development of integrated circuit, Electronic Packaging becomes gentlier, thinner, less, with better function, progressively meets the mankind to pursuit convenient, comfortable, power, also Electronic Packaging had higher requirement simultaneously.The increase of electronic component power consumption will inevitably cause the raising of circuit caloric value, thereby makes working temperature constantly increase.In general, in semiconductor device, 18 DEG C of the every risings of temperature, the possibility of inefficacy just increases by 2～3 times.Therefore heat radiation becomes the bottleneck problem of restriction electronic component to high powerization development.
Current, heat dissipation problem has become one of pendulum ultimate challenge in face of designers undoubtedly.Along with printed substrate is towards the development of high density, high accuracy, small-sized multilayer SMT direction, the installing space of components and parts significantly reduces on the one hand; But and more and more higher to the power requirement of power component on the other hand.Little space is high-power inevitably produces more heat accumulation, causes components and parts electric property to decline and even damages.Previous solution is to adopt cooled hardware or the heat radiation of ceramic functional block, the former itself needs large quantity space, and the latter is more because ceramic thermal coefficient of expansion is larger, and can not form large ceramic insulating layer, and if ceramic insulating layer while being greater than certain size in repeated multiple times cold cycling solder joint place cause Joint failure even easily to cause that short circuit lost efficacy because stress easily forms crackle or comes off.In addition, along with the pin of electronic devices and components more and more participates in heat radiation, require conductive layer also will there is good heat-sinking capability.Therefore,, along with packaging density and the raising to reliability requirement, should consider to select the better base material of heat conductivility and heat-conducting layer.
Current electronic device generally uses FR4 printed substrate, for electronic device, affects a working temperature that key factor is exactly components and parts of its reliability index.Record according to pertinent literature, the failure rate of electronic equipment has 55% to be that the setting that exceedes electronic component by temperature causes.Temperature is different to the performance impact of all kinds components and parts, and in common components and parts, temperature has the greatest impact for semiconductor device.The semiconductor device of widely applying in electronic equipment is as integrated transporting discharging, TTL logic chip, various power supply voltage stabilizing chips etc., and its basic composition unit is all P-N knot, very responsive to variations in temperature, 10 DEG C of the general every risings of temperature, and reverse leakage current will double.This variation with temperature, will directly cause product normal working point to drift about, and maximum power dissipation declines.Temperature also has a certain impact to the performance parameter of Resistor-Capacitor Unit.When temperature raises, can cause thermal noise aggravation in resistance, resistance departs from nominal value, allows degradation under dissipation power.Be that the parameter such as capacitance and dielectric loss angle is changed on the impact of capacitor, thereby cause the parameter changes such as the capacity-resistance time constant in circuit, affect the reliability of whole electronic equipment.In order to reduce the performance impact of temperature to components and parts, must use heat radiation well and the high wiring board of reliability.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the present invention is to provide a kind of patterning material circuit substrate that insulate more.Adopt patterning of the present invention insulate more material circuit substrate not only cost relatively low and also have advantages of high thermal conductivity, resist wear and dependable performance.
The patterning of the present invention material circuit substrate that insulate more, comprise metal substrate, it is characterized in that: on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is as the pedestal of semiconductor components and devices, described resin insulating barrier is as the pedestal of other electronic devices and components, and described semiconductor components and devices and described other electronic devices and components are electrically connected by metal connector.
Wherein, on described metal substrate, there is multiple resin insulating barriers and multiple high heat conductive insulating layer; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
Wherein, described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.
Wherein, described metal substrate is made by being selected from aluminium, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or their alloy material.As preferably, described metal substrate is by copper or copper alloy, aluminum or aluminum alloy, and monocrystalline silicon or polysilicon etc. are made.
Wherein, described metallic matrix is through surface treatment procedure, and described surface treatment procedure comprises any one or a few in roughening treatment, pickling, alkali cleaning, acid etching or alkaline etching operation.
Wherein, described metal base surface is formed with metal or nonmetal transition zone.
Wherein, described metal base surface is formed with anode oxide film or insulation paint film in its surface through surface treatment.
Wherein, described high heat conductive insulating layer is made up of ceramic material or nonmetal monocrystal material.
Wherein, described ceramic material is selected from one or more of oxide, nitride, carbide or their compound.
Wherein, described ceramic material forms by sintering or vacuum coating method, and described vacuum coating method is selected from the techniques such as evaporation, sputter, ion plating, reactive sputtering and chemical vapour deposition (CVD).
Wherein, the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK, is preferably 100～500W/mK.
Wherein, the thickness of described high heat conductive insulating layer is 20～500 μ m, is preferably 20～200 μ m.
Wherein, described semiconductor components and devices or other electronic devices and components are connected with plain conductor or metal joint pin by wave soldering, reflow soldering, eutectic welding or use electroconductive binder.
Wherein, the power of described semiconductor components and devices is more than 0.5W, more than being preferably 3W, more preferably more than 5W.
Wherein, described resin insulating barrier is the resin cured matter that contains thermosetting resin and curing agent.
Wherein, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.
Wherein, described thermosetting resin is selected from the one in epoxy resin, organic siliconresin, phenolic resins or imide resin.
Wherein, described inorganic filler is selected from one or more in silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride or boron nitride.
Wherein, the thermal conductivity of described resin insulating barrier is more than 0.5W/mK, and preferably thermal conductivity is more than 1.0W/mK, for example 1.0～30W/mK.
Wherein, the thickness of described resin insulating barrier is 20～1000 μ m, and preferred thickness range is 20～500 μ m.
Compared with prior art, technical scheme of the present invention has following beneficial effect:
The present invention is by arranging Ceramic insulator and the insulation resin sheet of different conductive coefficients and unlike material, can provide thermal diffusivity to significantly improve and the electronic devices and components encapsulation insulating metal substrate of high reliability, because the performance of semiconductor device is to responsive to temperature, therefore use the base of ceramic of heat conduction and heat dispersion excellence for semiconductor device, and use common resin-insulated material for other electronic devices and components, the brittle failure of having avoided like this maximization of ceramic wafer to cause, has improved the reliability of circuit substrate; In addition the present invention, also by the processing to metal substrate, can form the high pressure resistant insulating barrier puncturing on the surface of metal substrate, and the anodic oxide coating of for example special processing or paint film layer, can further improve the reliability of packaging density and encapsulation.Circuit substrate of the present invention can be for the various matrixes containing semiconductor chip, for example can improve the heat radiation of CPU etc. in computer circuits, improve the heat radiation of the semiconductor chips such as IGBT bipolar in inverter circuit, improve the heat radiation of wireless module in wireless communication line etc., the heat radiation that improves managing chip in electric power management circuit.
Brief description of the drawings
Fig. 1 is the insulate structural representation of material circuit substrate of the patterning with semiconductor components and devices and other electronic devices and components of the present invention more.
Embodiment
The patterning of the present invention material circuit substrate that insulate more, comprise metal substrate, on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is as the pedestal of semiconductor components and devices, described resin insulating barrier is as the pedestal of other electronic devices and components, and described semiconductor components and devices and described other electronic devices and components are electrically connected by metal connector.Described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.Specifically, for example, can adopt solder, solder brazing, high-termal conductivity binding agent etc. to be electrically connected, be preferably solder.Described semiconductor chip can be for example IGBT bipolar chip, cpu chip, wireless telecommunications chip, managing chip or other semiconductor chip in inverter circuit in the present invention.In the present invention, the power of described semiconductor components and devices is more than 0.5W, and more than being preferably 3W, more preferably more than 5W, if certainly do not consider economic factor, it is the semiconductor components and devices below 0.5W that circuit substrate of the present invention also can be applied to power.Described semiconductor element can also be high-power LED chip in the present invention, and for example power of single LEDs chip is more than 1W, is preferably chip more than 3W.And described LED refers to Light-Emitting Diode, it refers to the luminescent diode component having to the contact area of diode power supply.Multi-form semiconductor light-emitting-diode can be formed by the PN junction (III-V semiconductor) of one or more III family elements and one or more V group elements.The example that can be used for the III-V semi-conducting material of LED comprises: nitride, as gallium nitride or InGaN; And phosphide is as InGaP.Also the III-V material of other type can be used, the inorganic material of other family can also be used.
Wherein, on described metal substrate, there is multiple resin insulating barriers and multiple high heat conductive insulating layer; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
In the present invention, described metal substrate can be made by being selected from aluminium, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or their alloy material.As preferably, described metal substrate is by copper or copper alloy, aluminum or aluminum alloy, and monocrystalline silicon or polysilicon etc. are made.In the present invention, the thickness of metal substrate can be selected according to actual needs, for example can be from 0.1 millimeter to tens of millimeters.Described substrate preferably uses copper or copper alloy in the present invention.Be preferably specifically that impurity is few, the aluminium of more than 99 quality % purity.For example, copper, 99.0% bronze medal etc. of preferred 99.99wt%.Or, based on different objects, also can add other alloying element.For example can add the cupromanganese of appropriate manganese, to improve its corrosion resisting property.Except manganese, also can select the interpolation element that other solid solubility limit is high.
As preferably, described metallic matrix is through surface treatment procedure, and described surface treatment procedure can comprise the various operations such as roughening treatment, pickling, alkali cleaning, acid etching or alkaline etching.As the exemplary process that is used to form coarse surface, can enumerate to metal substrate is implemented successively the roughened processing of mechanicalness, alkaline etching processing, adopts sour clean and used the methods such as the roughened processing of electrochemistry of electrolyte; Metal substrate is implemented repeatedly the roughened processing of mechanicalness, alkaline etching processing, adopts sour dirty removing processing and used the method for the roughened processing of electrochemistry of different electrolyte; But the present invention is not limited to these.Can be inorganic acid and/or organic acid as acid, described inorganic acid can be for example sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid etc.; Described organic acid can be for example carboxylic acid or sulfonic acid, such as formic acid, acetic acid, tartaric acid, oxalic acid, malic acid, ascorbic acid and benzoic acid etc.Can be for example alkali-metal hydroxide as conventional alkali, for example NaOH or potassium hydroxide, also can use the organic base such as Tetramethylammonium hydroxide, trimethyl (ethoxy) ammonium hydroxide in addition.In order to reduce the etch quantity of metal matrix material in pickling or alkaline etching processing procedure, in described aqueous slkali or acid solution, can contain anticorrodent, can contain in addition other component such as surfactant and chelating agent.In addition, described surface treatment, can also be to form the paint film layer of anode oxide film or electric insulation at described metal base surface, thereby improves the high pressure resistant breakdown strength of caking property and described metallic matrix.
In the present invention, be 50～500W/mK as the scope of the conductive coefficient of the described high heat conductive insulating layer in the present invention, as preferably, the scope of the conductive coefficient of described high heat conductive insulating layer is 100～500W/mK.The thickness of described high heat conductive insulating layer is preferably 20～500 μ m, and more preferably, its thickness range is 20～200 μ m.Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material, can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride as ceramic material.The ceramic wafer that described ceramic material can be fired by cutting in the present invention is also welded on metal substrate of the present invention, and described welding method can be for example the method for soldering, such as solder, solder brazing or active soldering etc.Described ceramic material can also prepare by original position formation method in the present invention, and for example, by vacuum coating method, for example conventional physical gas-phase deposite method or chemical gaseous phase depositing process prepare.As example for example evaporation, sputter or the ion-plating deposition method of physical vapour deposition (PVD).Wherein, that vacuum evaporation deposition has is simple and easy, processing ease, film forming speed are fast and efficiency advantages of higher, is the most widely used technology in film preparation.Its principle is under vacuum environment, gives material to be evaporated, and for example ceramic material in the present invention provides enough heats to evaporate necessary vapour pressure to obtain.At suitable temperature, evaporation particle condenses on metallic matrix, so both can realize vacuum evaporation thin film deposition.For example can select resistance heating evaporation, flicker evaporation, electron beam evaporation, laser evaporation, arc evaporation or radio frequency heating evaporation etc. as the example of evaporation.Sputter refers to that having enough high-octane Ions Bombardment target material surfaces makes atomic emissions wherein out, sputter procedure in fact incoming particle (being generally ion) by colliding with target, carry out the process of a series of energy exchanges, and projectile energy 95% for encouraging the lattice thermal vibration of target, the energy that only has 5% left and right is to pass to sputtered atom.Example as sputtering sedimentation for example passes through, by medium-high frequency magnetron sputtering ceramic target and be deposited in described metallic substrate surfaces, the film that sputter obtains is combined well with matrix, and film purity is higher, compactness is better, and thickness is controlled, can obtain the film of even thickness.Example as sputtering sedimentation for example can be selected aura direct current sputtering, magnetron sputtering, radio frequency sputtering, ion beam sputtering, reactive sputtering etc.In addition, described ceramic material can also be deposited and be obtained by ion electroplating method.Ion plating refers under vacuum condition, utilizes gas discharge to make gas or by evaporant partial ionization, produces ion bombardment effects, and evaporant or reactant are deposited on substrate the most at last.For example can adopt general chemical gaseous phase depositing process or plasma enhanced chemical vapor deposition method as chemical gaseous phase depositing process.
In the present invention, according to the type of other electronic devices and components, the thermal conductivity of described resin insulating barrier is more than 0.5W/mK, and more preferably, its thermal conductivity is more than 1.0W/mK, for example, can be the scope of 0.5～30W/mK.The heat diffusion that so other electronic devices and components or plain conductor can be produced is fallen and is not produced accumulation.The thickness of described resin insulating barrier is preferably 20～500 μ m, and more preferably, its thickness range is 20～200 μ m.If because thickness is less than 20 μ m, electrical insulating property becomes insufficient, if be greater than 500 μ m, thermal diffusivity may be impaired, and heat dispersion will significantly reduce.And described resin insulating barrier is the resin cured matter that contains thermosetting resin and curing agent.As preferably, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.In addition,, in the hardening resin composition that is used to form insulating barrier, can also can also use as required catalyst, silane coupling agent, metatitanic acid lipid coupling agent, stabilizer and curing accelerator etc.
As thermosetting resin, for example, can select epoxy resin, organic siliconresin, phenolic resins and imide resin etc.Consider preferably to use epoxy resin from the angle of thermal conductivity.And as epoxy resin, the difunctionality epoxy resin that preferably use can obtain comparatively at an easy rate, as, bisphenol A diglycidyl ether, Bisphenol F diglycidyl ether, bisphenol-S diglycidyl ether, resorcinolformaldehyde resin, six hydrogen bisphenol A diglycidyl ethers, polypropylene glycol diglycidyl ether, neopentylglycol diglycidyl ether, o-phthalic acid diglycidyl ester, dimeric dibasic acid 2-glycidyl ester etc.
As curing agent, preferably use anhydrides or the phenol with excellent engineering properties and electrical property, and in order to ensure engineering properties and the dielectric property of insulating barrier, preferably add polyaddition type curing agent.As polyaddition type curing agent, anhydrides or phenol that preferably use can obtain comparatively at an easy rate, anhydrides comprises phthalic anhydride, tetrahydrochysene methyl nadic anhydride, hexahydrophthalic anhydride, trimellitic anhydride, methyl norbornene dioic anhydride etc., and phenol comprises linear phenol-aldehyde resin, orthoresol linear phenol-aldehyde resin, bisphenol A-type linear phenol-aldehyde resin etc.
In addition,, in order to promote the curing reaction of described thermosetting and polyaddition type curing agent, can add catalyst.As catalyst, preferably imidazoles, as glyoxal ethyline, 2-undecyl imidazole, 2-heptadecyl imidazoles, 1,2-methylimidazole, 2-methyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1 benzyl 2 methyl imidazole, 1-benzyl-2-phenylimidazole, 2,3-dihydro-1H-pyrrolo-[1,2-a] benzimidazole, 2-phenyl-4,5-hydroxymethyl-imidazoles etc., can change arbitrarily its addition to obtain desirable curing rate.
As inorganic filler, preferably there is the good inorganic filler of electrical insulating property and heat conductivity, for example can use silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride, boron nitride etc.For keeping suitable mobility, preferably 5～15wt% of the content of the inorganic filler in insulating barrier.The granularity of inorganic filler is better to comprise two kinds of granularities that average grain diameter is 0.6 μ m～2.4 μ m and 5 μ m～20 μ m.By corase particles larger average grain diameter and the less particulate of average grain diameter are mixed, during with the each particulate of independent use compared with, can realize more filling, can obtain good heat conductivity.In addition, shape of particle can be that pulverize, spherical or lepidiod.
On circuit substrate of the present invention, also contain metal pattern circuit, described metal pattern circuit can be formed on described resin insulating barrier or described high heat conductive insulating layer as required, described metal pattern circuit can be by utilizing the methods such as silk screen printing to carry out pattern printing in the hardening resin composition slurry that is used to form insulating barrier on metal substrate, after heating, form after semi-cured state, paste metal forming, afterwards, heat, form the method for completely crued state substantially; Or use and in advance insulating barrier is processed into the sheet of semi-cured state, utilize hot-press arrangement to make itself and the integrated method of metal forming etc. that is used to form metal pattern circuit.As the formation method of metal pattern circuit, for example, after can using in advance the regulation position painting erosion resistant agent layer in metal forming that it is solidified, utilize wet etching to utilize the corrosion of the corrosive agent such as mixture of conventional copper chloride, hydrogen peroxide and sulfuric acid; Can utilize in addition dry-etching method, the dry etching process that for example utilizes sputter gas to carry out.
As shown in Figure 1, for a typical example (but the scope that protection scope of the present invention limits with the claim of checking and approving is as the criterion) of great power LED photo engine of the present invention, more described patterning insulate and is provided with semiconductor components and devices and other electronic devices and components on material circuit substrate, it comprises metal substrate 10, on described metal substrate 10, be formed with resin insulating barrier 20 and high heat conductive insulating layer 25, and on described high heat conductive insulating layer 25, be provided with metal pattern circuit 30 and semiconductor components and devices 40, on described resin insulating barrier 20, be provided with metal pattern circuit 30 and other electronic devices and components 50, and described semiconductor components and devices 40 can be electrically connected by metal connector 60 with described other electronic devices and components 50.Described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.Specifically, for example, can adopt solder, solder brazing, high-termal conductivity binding agent etc. to be electrically connected, be preferably solder.Described semiconductor chip can be for example IGBTbipolar chip in inverter circuit, cpu chip, wireless telecommunications chip, managing chip or other semiconductor chip in the present invention.
metal substrate and anodic alumina films
At the bottom of described metal substrate is chosen as aluminum plate foundation in the present embodiment, the fine aluminium of for example 99.99wt%, and be formed with anodic alumina films at the bottom of described aluminum plate foundation; Thickness at the bottom of described aluminum plate foundation is 2～20mm, and the thickness of anodic alumina films is 10～20 μ m; The durable time of insulation of described anodic alumina films is greater than 1000 hours, and the durable time of described insulation refers under 50 DEG C, the condition of 85%RH and on anodic alumina films, applies the direct voltage of 100V, and resistance value is dropped to 10
6time below Ω.
The preparation method of described anode oxide film is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the DL-cysteine of 3～5g/L, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L; Be that 10～20 DEG C, current density are 0.5～1A/dm in liquid temperature
2, electrolytic treatments 20～30min.Adopt above-mentioned anode oxidation method, owing to adopting citric acid as Treatment Solution, and appropriate hydrogen peroxide and DL-cysteine are added therein, in the time of anodized, can make aluminum ions in liberal supply, thereby can obtain fine and close anodic alumina films, be under 10 μ m and above condition at thickness, even can meet without sealing of hole processing the requirement that the durable time of insulation is greater than 1000 hours.
Embodiment 1
The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20g/L, the DL-cysteine of 3g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 3g/L; Be that 10 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 20min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 2
The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 30g/L, the DL-cysteine of 4g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 20min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 3
The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 35g/L, the DL-cysteine of 5g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L; Be that 10 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1500 hours.
Comparative example 1
Aluminium sheet is carried out to pickling descaling, then in oxalic acid solution, carry out anodized, in described oxalic acid solution, contain the oxalic acid of 35g/L, the oxalic acid aluminium of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is 20 DEG C of liquid temperatures, current density 1A/dm
2, 5 minutes electrolytic treatments time, its durable time of insulating is 300～500 hours.
Comparative example 2
Aluminium sheet is carried out to pickling descaling, then in sulfuric acid solution, carry out anodized, in described sulfuric acid solution, contain the oxalic acid of 35g/L, the aluminum sulfate of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is 20 DEG C of liquid temperatures, current density 1A/dm
2, 5 minutes electrolytic treatments time, its durable time of insulating is 250～400 hours.
high heat conductive insulating layer
In the present invention, the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK.Described high heat conductive insulating layer thickness scope is 20～500 μ m, for example, be 50 μ m.Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material.Can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride as ceramic material.The ceramic wafer that described ceramic material can be fired by cutting in the present invention is also welded on metal substrate of the present invention, described welding method can be for example the method for soldering, such as solder, solder brazing or active soldering etc., preferably use active soldering, the composition of described active soldering for example can be selected the Si of Al, 3.00wt% and the Cu of surplus of Ti, the 2.00wt% of 2.25wt%; For example can select the Cu of Ti, 32.250wt% and the Ag of surplus of 1.25wt%; For example can select the Cu of In, 27.25wt% and the Ag of surplus of Ti, the 12.50wt% of 1.25wt%.In addition, described high heat conductive insulating layer can also adopt evaporation, the method of sputter plating or reactive ion plating and chemical vapour deposition (CVD) prepares, for example adopting application people is Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, publication number is CN103354221A, CN103353065A, CN103354219A, CN103354222A, CN103354698A, CN103354220A, CN103354269A, CN103354697A, CN103354699A, CN103354254A, CN103327736A, CN103327735A, CN103325921A, CN103338588A, or notification number is CN203340413U, CN203339213U, CN203339139U, CN203340409U, CN203340407U, CN203340408U, CN203339224U, CN203336288U, the preparation method who records in CN203339140U and CN203339145U, and above-mentioned document is documented in this, as a reference.
resin insulating barrier
In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and the thickness range of described resin insulating barrier is preferably 20～500 μ m.
Described resin insulating barrier is formed by the hardening resin composition that contains thermosetting resin, curing agent and inorganic filler, in addition, in the hardening resin composition that is used to form insulating barrier, can also can also use as required other component etc.Formation condition for example can be solidified 30～180 seconds under the condition of 160～180 DEG C.As preferably, 2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that described hardening resin composition contains 55～60wt%, the vinyltriethoxysilane of 12.5～15.0wt%, 8.0～10.0wt%, the TSIM of 3.2～5.0wt%, 2.5～3.0wt%, 0.5～1.0wt%, 6-BHT, and the average grain diameter of 3～8wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 3～8wt% are the alumina particulate of 5.0 μ m.
Embodiment 4
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 55wt%, the vinyltriethoxysilane of 15.0wt%, 10.0wt%, the TSIM of 5.0wt%, 2.5wt%, 1.0wt%, 6-BHT, and the average grain diameter of 5.5wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.0wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 20～25W/mK.
Embodiment 5
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 60wt%, the vinyltriethoxysilane of 12.5wt%, 8wt%, the TSIM of 3.2wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 6.3wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.0wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 22～26W/mK.
Embodiment 6
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 58wt%, the vinyltriethoxysilane of 15wt%, 10wt%, the TSIM of 5wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 4wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 4wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 18～22W/mK.
Embodiment 7
2 of the phthalic anhydride of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 78wt%, the glyoxal ethyline of 5wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 6.5wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.5wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 15～20W/mK.
Described resin insulating barrier, except meeting required thermal conductivity, also should have excellent heat-resisting discolouration in the present invention.In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition, at 170 DEG C, 8N/mm
2and be that to be processed into diameter under the condition of 120 seconds be that 50mm × thickness is that the disk of 3mm is as sample curing time, then under the condition of 150 DEG C, place 24 hours, utilization visually observes its heat-resisting discolouration, find that the sample described in embodiment 4-6 is found metachromatism, and the slightly variable color or variable color has occurred of sample described in embodiment 7.
metal pattern circuit
According to actual needs, at described resin insulating barrier, or be all formed with metal pattern circuit on described resin insulating barrier and described high heat conductive insulating layer.On described edge layer, can form conductive copper films by boning or pressing Copper Foil, or can form copper film by sputter, chemical plating (need to activate in advance).The thickness of described copper film is for example that 2～5 μ m are thick, then coat photoresist being with on described copper film, then on mask aligner, utilize metal lithographic mask to carry out photoetching, then form metal pattern circuit through developing, or, adopt the method for silk screen printing directly to form the figure of conductive metal layer; After baking-curing, more described aluminium lamination is carried out to etching with wet etching process, after etching, can obtain described metal pattern circuit.
Industrial applicibility
Circuit substrate of the present invention, there is improved heat dispersion and reliability, can be applied to the various matrixes containing semiconductor chip, for example can improve the heat radiation of CPU etc. in computer circuits, improve the heat radiation of the semiconductor chips such as IGBT bipolar in inverter circuit, improve the heat radiation of wireless module in wireless communication line etc., the heat radiation that improves managing chip in electric power management circuit.
For the ordinary skill in the art; specific embodiment is just exemplarily described the present invention by reference to the accompanying drawings; obviously specific implementation of the present invention is not subject to the restrictions described above; as long as adopted the improvement of the various unsubstantialities that method of the present invention design and technical scheme carry out; or without improving, design of the present invention and technical scheme are directly applied to other occasion, all within protection scope of the present invention.
Claims (17)
1. the patterning material circuit substrate that insulate more, comprise metal substrate, it is characterized in that: on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is as the pedestal of semiconductor components and devices, described resin insulating barrier is as the pedestal of other electronic devices and components, and described semiconductor components and devices and described other electronic devices and components are electrically connected by metal connector.
2. the patterning according to claim 1 material circuit substrate that insulate, is characterized in that: on described metal substrate, have multiple resin insulating barriers and multiple high heat conductive insulating layer more; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
3. the patterning according to claim 1 material circuit substrate that insulate, is characterized in that more: described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.
4. the patterning according to claim 1 material circuit substrate that insulate, is characterized in that: described metal substrate is made by being selected from aluminium, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or their alloy material more.
5. the patterning according to claim 4 material circuit substrate that insulate, is characterized in that more: described metal substrate is by copper or copper alloy, aluminum or aluminum alloy, and monocrystalline silicon or polysilicon are made.
6. the patterning according to claim 1 material circuit substrate that insulate more, it is characterized in that: described metallic matrix is through surface treatment procedure, and described surface treatment procedure comprises any one or a few in roughening treatment, pickling, alkali cleaning, acid etching or alkaline etching operation.
7. the patterning according to claim 1 material circuit substrate that insulate, is characterized in that: described metal base surface is formed with metal or nonmetal transition zone more.
8. the patterning according to claim 1 material circuit substrate that insulate, is characterized in that: described high heat conductive insulating layer is made up of ceramic material or nonmetal monocrystal material more.
9. the patterning according to claim 8 material circuit substrate that insulate, is characterized in that: described ceramic material is selected from one or more of oxide, nitride, carbide or their compound more.
10. the patterning according to claim 9 material circuit substrate that insulate, is characterized in that: the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK more.
The 11. patternings according to claim 10 material circuit substrate that insulate, is characterized in that: the thickness of described high heat conductive insulating layer is 20～500 μ m more.
The 12. patternings according to claim 1 material circuit substrate that insulate, is characterized in that more: described semiconductor components and devices or other electronic devices and components are by wave soldering, reflow soldering, eutectic welding or use electroconductive binder to be connected with plain conductor or metal joint pin.
The 13. patternings according to claim 1 material circuit substrate that insulate, is characterized in that: the thermal conductivity of described resin insulating barrier is 0.5W/mK～30W/mK more.
The 14. patternings according to claim 14 material circuit substrate that insulate, is characterized in that: the thickness of described resin insulating barrier is 20～500 μ m more.
The 15. patternings according to claim 1 material circuit substrate that insulate, is characterized in that: described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler more.
The 16. patternings according to claim 16 material circuit substrate that insulate, is characterized in that: described inorganic filler is selected from one or more in silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride or boron nitride more.
The 17. patternings according to claim 1 material circuit substrate that insulate, is characterized in that: described semiconductor chip is IGBT bipolar chip, cpu chip, wireless telecommunications chip, managing chip or other semiconductor chip in inverter circuit more.
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| CN201410094878.6A CN103917043B (en) | 2014-03-14 | 2014-03-14 | Patterned multi-insulating-material circuit substrate |
| PCT/CN2014/077369 WO2015135249A1 (en) | 2014-03-14 | 2014-05-13 | Patterned multi-insulating material circuit substrate |
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| CN201410094878.6A CN103917043B (en) | 2014-03-14 | 2014-03-14 | Patterned multi-insulating-material circuit substrate |
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| CN108735890A (en) * | 2018-05-25 | 2018-11-02 | 张琴 | Quasi- air-tightness surface acoustic wave device encapsulating structure and production method |
| US11083087B2 (en) | 2019-01-10 | 2021-08-03 | Jentech Precision Industrial Co., Ltd. | Insulated metal substrate and manufacturing method thereof |
| CN115136303A (en) * | 2020-03-30 | 2022-09-30 | 华为技术有限公司 | Embedded substrate, circuit board assembly and electronic equipment |
| TWI831247B (en) * | 2022-06-16 | 2024-02-01 | 先豐通訊股份有限公司 | Power module and method for manufacturing the same |
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| CN108990254B (en) * | 2017-06-01 | 2021-04-16 | 瑷司柏电子股份有限公司 | Built-in vertical heat dissipation ceramic block printed circuit board and circuit assembly with the same |
| US11224118B2 (en) | 2019-12-17 | 2022-01-11 | Saft America | Bussing and printed circuit board integration with power electronics |
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Also Published As
| Publication number | Publication date |
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| CN103917043B (en) | 2017-02-22 |
| WO2015135249A1 (en) | 2015-09-17 |
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