CN103901234A - In-situ integration representation device of multiferroic material nanoscale domain structure - Google Patents

Abstract

The invention discloses an in-situ integration representation device of a multiferroic material nanoscale domain structure. The in-situ integration representation device comprises an atomic force microscopy in-situ incentive platform and an in-situ detection platform, the atomic force microscopy in-situ incentive platform is used for multiferroic structure in-situ incenting on detected multiferroic materials to enable an incenting point of the detected multiferroic materials to generate domain structure imaging signals, and the in-situ detection platform carries out in-situ real-time detection and data processing on the domain structure imaging signals and displays the in-situ imaging representation result of the multiferroic domain structure in real time. Through the device, in-situ, lossless, real-time, dynamic and integrated representation of a multiferroic material nanoscale ferroelectric domain and a ferromagnetic domain can be achieved.

Description

In situ integrated characterization device for nanoscale domain structure of multiferroic materials

technical field

The invention belongs to the field of instrument development, and in particular relates to an in-situ integrated characterization device for nanoscale domain structures of multiferroic materials.

Background technique

Multiferroic materials refer to a class of compounds that exist in two or more ordered states of ferroelectricity, ferromagnetism and ferroelasticity at a certain temperature. Among them, the most research significance and application value are multiferroic materials with both ferroelectricity and ferromagnetism.

The simultaneous existence of these two ordered states will produce a unique magnetoelectric coupling effect in the material system, making multiferroic materials have rich physical properties. At the same time, the spontaneous magnetoelectric coupling effect caused by the two ordered subsystems inside the system enables the material to control its spontaneous magnetization through an electric field and its spontaneous polarization through a magnetic field, which has great application prospects.

Functional materials with both ferroelectricity and ferromagnetism have great potential for development in information storage, microwave fields, current measurement of high-voltage transmission lines, and multifunctional electronic devices. Because multiferroic materials contain rich materials science and physics research topics, as well as broad application prospects, they have attracted the attention of many scientists at home and abroad in recent years, and are currently one of the most active research fields in the field of inorganic materials. , and the measurement and characterization of the properties of nanoscale multiferroics has increasingly become a challenging issue that needs to be solved urgently in this field.

The domain structure including (ferro) electric domain and (ferro) magnetic domain is an important microstructure in multiferroic materials, and it is the basis of macroscopic physical phenomena and physical properties of multiferroic materials. The observation is of great significance to the study of the magnetoelectric coupling effect.

The current characterization methods of ferroelectric domains and ferromagnetic domains have the following limitations: the characterization of ferroelectric domains and ferromagnetic domain structures is completed by multiple sets of discrete devices, which cannot achieve real-time and synchronous detection. Therefore, the traditional characterization methods of the domain structure of multiferroic materials are difficult to realize the in-situ, real-time and integrated characterization of the nanoscale electric and magnetic domains of multiferroic materials.

In view of the above limitations, the present invention hopes to establish a characterization device that can realize the in-situ, non-destructive, real-time, dynamic, and quantitative characterization of multiferroic material nanoscale electric domains and magnetic domains, so as to meet the current rapid development of multiferroic material characterization. urgent need.

Contents of the invention

In view of the above, the technical problem to be solved by the present invention is to provide an in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials, which can effectively perform in-situ , lossless, real-time, dynamic, and integrated characterization.

In order to solve the above-mentioned technical problems, an in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials according to the present invention includes: an in-situ excitation for multiferroic materials to be tested to make the multiferroic materials An atomic force microscope in-situ excitation platform for generating domain structure imaging signals at the excitation point of the measured multiferroic material; perform in-situ real-time detection and data processing of the domain structure imaging signals and display the in-situ state of the multiferroic domain structure in real time Platform for in situ detection of imaging characterization results.

According to the present invention, by setting the in-situ excitation platform of the atomic force microscope, the basic hardware platform required for nanoscale electric domain and magnetic domain excitation is provided, and the nanoscale multiferroic domain structure (ferroelectric domain, ferroelectric domain, Ferromagnetic domain) imaging signal; and by setting up an in-situ detection platform, it is used to realize the in-situ real-time detection and data processing of the nanoscale domain structure of multiferroic materials, and display the imaging characterization results of the domain structure in real time.

The present invention combines the atomic force microscope (AFM) nano-detection function with domain structure imaging signal excitation, and based on a commercial AFM nano-detection platform, establishes a nano-scale in-situ evaluation technology with both nano-scale domain structure imaging signal excitation and detection characteristics, effectively solving the problem. The key technical difficulty of in-situ characterization of the nanoscale domain structure of multiferroic materials is solved. The characterization device of the present invention not only has the unique functions of in-situ excitation and in-situ synchronous characterization of nanoscale multiferroic domain structures, but also has the advantages of high resolution, high sensitivity, high signal-to-noise ratio, and the like. Moreover, the characterization device of the present invention has simple structure, strong compatibility, and is suitable for combining with different commercial AFMs. It is a new technology that is easy to popularize and apply, and expands the nanometer multiferroic materials that the existing commercial atomic force microscopes do not have. The physical property evaluation function provides an important in-situ and nanoscale characterization device for in-depth research on the magnetoelectric coupling mechanism of nano-multiferroic materials and the in-depth development of nano-multiferroic materials and devices.

Moreover, in the present invention, it is also possible that the in-situ excitation platform of the atomic force microscope includes: an atomic force microscope platform equipped with a magnetic base on which the multiferroic material to be tested is placed; A probe for scanning the material to detect the domain structure imaging signal generated by its excitation point; a signal generating unit for generating an excitation signal respectively applied to the magnetic base and the probe for the in-situ excitation; A signal output unit for sending the domain structure imaging signal detected from the probe to the in-situ detection platform.

According to the present invention, the in-situ excitation platform of the atomic force microscope can effectively realize the in-situ excitation of the multiferroic domain structure on the multiferroic material to be tested, so that the excitation point of the multiferroic material to be tested can generate domain structure imaging signals, And output the domain structure imaging signal to the in-situ detection platform.

Moreover, in the present invention, the in-situ excitation platform of the atomic force microscope may also include: a switching module for switching the scanning mode of the probe between a contact scanning mode and a non-contact scanning mode.

According to the present invention, the scanning mode of the probe can be switched directly and in real time between the contact scanning mode in the electric domain imaging process and the non-contact scanning mode in the magnetic domain imaging process through the switching module, which improves the performance of the present invention. The reliability of the characterization device ensures the accuracy of scanning positioning and realizes the in-situ imaging of the multiferroic domain structure.

Moreover, in the present invention, it is also possible that the switching module includes: a contact scanning mode for turning on the contact scanning mode during the electric domain imaging process and closing the contact scanning mode during the magnetic domain imaging process. a switch control unit; and a non-contact scanning switch control unit for turning on the non-contact scanning mode during the magnetic domain imaging process and turning off the non-contact scanning mode during the electrical domain imaging process.

According to the present invention, the contact scanning mode in the electric domain imaging process and the non-contact scanning mode in the magnetic domain imaging process can be effectively realized through the contact scanning switch control unit and the non-contact scanning switching control unit. Direct, real-time switching.

In addition, in the present invention, a piezoelectric bimorph provided between the signal generating unit and the probe may be further included.

According to the present invention, by setting the piezoelectric bimorph, it can be beneficial to realize the in-situ excitation of the magnetic domain structure imaging signal of the multiferroic material to be tested.

Moreover, in the present invention, it is also possible that the probe is a magnetoelectric detection probe, and in the contact scanning mode, the micro-cantilever deformation of the probe as a feedback parameter is 0.1-2 nm, which is consistent with the The diameter of the contact area where the multiferroic material to be tested interacts is 10-20nm; in the non-contact scanning mode, the distance between the probe and the multiferroic material to be tested is 50nm-150nm.

According to the present invention, the magnetoelectric detection probe has the functions of micro-area piezoelectricity, magnetic signal excitation source and detection source; the working mode of the magnetoelectric detection probe includes a contact scanning mode and a non-contact scanning mode. In the contact scanning mode, the micro-cantilever deformation of the probe as the feedback parameter is 0.1-2nm, and the contact area interacting with the measured multiferroic material has a diameter of 10-20nm, which is conducive to the realization of high-resolution electric domain imaging Rate. In the non-contact scanning mode, the distance between the probe and the measured multiferroic material is 50nm-150nm, which can help reduce the influence of sample shape fluctuations on the magnetic domain signal and maintain the stability of the magnetic domain imaging signal .

Moreover, in the present invention, it is also possible that the working frequency range of the probe is 2kHz-70kHz.

According to the present invention, the working frequency range of the probe is 2kHz-70kHz, which is beneficial to obtain effective imaging signals of relatively large electric and magnetic domains and reduce noise interference.

Furthermore, in the present invention, it may also be characterized in that the in-situ detection platform includes: a signal processing device for receiving the domain structure imaging signal output by the in-situ excitation platform of the atomic force microscope and increasing the signal amplitude unit; a lock-in amplifier unit that detects the signal output by the signal processing unit; performs data processing on the signal output by the lock-in amplifier unit and displays the processing of the in-situ imaging characterization result of the multiferroic domain structure and Display unit.

According to the invention, in-situ real-time detection and data processing of domain structure imaging signals can be effectively realized, and in-situ imaging characterization results of multiferroic domain structures can be displayed in real time.

The present invention may comprise any combination of at least two structures disclosed in the claims and/or the description and/or the drawings. In particular, the present invention includes any combination of two or more of the respective claims of the claims.

The above and other objects, features and advantages of the present invention will be better understood from the following detailed description with reference to the accompanying drawings.

Description of drawings

Fig. 1 schematically shows the structural block diagram of the in-situ integrated characterization device of the multiferroic material nanoscale domain structure according to the present invention;

Fig. 2 schematically shows a structural block diagram of the atomic force microscope in-situ excitation platform in the characterization device shown in Fig. 1;

Fig. 3 schematically shows a structural block diagram of the in-situ detection platform in the characterization device shown in Fig. 1;

Figure 4(a) to Figure 4(d) show the test results obtained by the characterization device according to the present invention, wherein Figure 4(a) is an AFM image of the surface topography of the tested multiferroic material, and Figure 4(b ) is an image of the ferroelectric domain structure obtained in situ in the corresponding region of the tested multiferroic material using the characterization device according to the present invention, and Fig. 4(c) is an image of the measured multiferroic material using the characterization device according to the present invention The image of the ferromagnetic domain structure obtained in situ in the corresponding region of the magnetic material, and Fig. 4(d) is the micro-domain obtained by the piezoelectric response test of the micro-domain with different spontaneous polarization orientations using the characterization device according to the present invention Piezoelectric response loop.

Detailed ways

The in-situ integrated characterization device of the multiferroic material nanoscale domain structure of the present invention will be described in detail below with reference to the accompanying drawings and examples.

The following examples are all the characterization results of the nanoscale ferroelectric domain structure and ferromagnetic domain structure of multiferroic materials using the in-situ integrated characterization device for multiferroic material nanoscale domain structure according to the present invention, to further illustrate the present invention effects, but are not limited to the following examples.

Fig. 1 schematically shows a structural block diagram of an in-situ integrated characterization device for nanoscale domain structures of multiferroic materials according to the present invention. As shown in Figure 1, the in-situ integrated characterization device for multiferroic material nanoscale domain structure of the present invention includes an in-situ excitation for the multiferroic material to make the multiferroic material In situ excitation platform 1 for atomic force microscopy to generate domain structure imaging signals at excitation points of ferromagnetic materials; Detection platform 2.

Since the atomic force microscope is one of the important tools for conducting nanoscience research, it has unique advantages such as high-precision control and nanoscale resolution. New features provide an important platform foundation.

Aiming at the urgent demand for the characterization of nanoscale multiferroic materials, the present invention establishes an in-situ integrated characterization device for nanoscale multiferroic domain structures based on the characteristics of the AFM nanometer detection platform, such as detection maturity, complete functions, and structural perfection. , realized the in-situ, real-time, and dynamic imaging of nanoscale ferroelectric domains and ferromagnetic domains, and provided a basis for in-depth research on the magnetoelectric coupling mechanism of nanoscale multiferroic materials and the in-depth development of nanoscale multiferroic materials and their devices. Important in situ nano-characterization method.

The AFM in-situ excitation platform 1 in the in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials of the present invention is used to provide the AFM platform basis for developing new technologies for the in-situ characterization of nanoscale multiferroic domain structures, and based on this Realize the in-situ excitation of multiferroic domain structures such as nanoscale ferroelectric domains and ferromagnetic domains in multiferroic materials; while the in-situ detection platform 2 is used to realize nanoscale ferroelectric domains and ferromagnetic domains in multiferroic materials In situ real-time detection and processing of ferroic domain structures, showing results of in situ imaging characterization of nanoscale multiferroic domain structures.

The more detailed structure of the in-situ integrated characterization device of the multiferroic material nanoscale domain structure of the present invention is shown in Fig. 2 and Fig. 3 . Wherein, Fig. 2 schematically shows a structural block diagram of the in-situ excitation platform of the atomic force microscope in the characterization device shown in Fig. 1; Fig. 3 schematically shows the structure of the in-situ detection platform in the characterization device shown in Fig. 1 block diagram.

Referring to Fig. 2, the in-situ excitation platform 1 of the atomic force microscope in the characterization device includes: an atomic force microscope platform 11 with a magnetic base 19, on which the measured multiferroic material 18 is placed, and the measured multiferroic material Conductive glue can be used to bond the material 18 and the magnetic base 19, thereby effectively ensuring the mechanical stability of the tested multiferroic material 18 and the effective transmission of signals. The in-situ excitation platform 1 of the atomic force microscope includes a probe 12 for scanning the measured multiferroic material 18 to detect domain structure imaging signals generated by its excitation points.

The in-situ excitation platform 1 of the atomic force microscope also includes a signal generating unit for generating excitation signals respectively applied to the magnetic base 19 and the probe 12 for in-situ excitation and for imaging the domain structure detected from the probe 12 The signal is sent to the signal output unit of the in-situ detection platform 2 . In this embodiment, the signal generating unit may be a signal generator 14 capable of generating alternating voltage signals, and the signal output unit may be a domain structure imaging signal output port 111 connected to the probe 12 .

Moreover, the in-situ excitation platform 1 of the atomic force microscope also includes a switching module 15 for switching the scanning mode of the probe 12 between a contact scanning mode and a non-contact scanning mode, through which the switching module 15 can make the probe 12 The scanning mode is directly and real-time switched between the contact scanning mode in the electrical domain imaging process and the non-contact scanning mode in the magnetic domain imaging process, which improves the reliability of the characterization device of the present invention and ensures the accuracy of scanning positioning In situ imaging of multiferroic domain structures has been realized.

Specifically, as shown in FIG. 2, the switching module 15 includes a contact scan switch control unit 151 for turning on the contact scan mode during the electric domain imaging process and closing the contact scan mode during the magnetic domain imaging process; and The non-contact scanning switch control unit 152 is used to enable the non-contact scanning mode during the magnetic domain imaging process and to disable the non-contact scanning mode during the electrical domain imaging process. Through the contact scan switch control unit 151 and the non-contact scan switch control unit 152, the direct, Switch in real time.

Also as shown in FIG. 2 , a piezoelectric bimorph 13 is further provided between the signal generating unit 14 and the probe 12 . By arranging the piezoelectric bimorph 13, the in-situ excitation of the imaging signal of the magnetic domain structure of the multiferroic material to be tested can be facilitated.

In addition, the above-mentioned probe 12 is a magnetoelectric detection probe, and the magnetoelectric detection probe has the functions of micro-area piezoelectric, magnetic signal excitation source and detection source; the working mode of the magnetoelectric detection probe includes contact scanning mode and Non-contact scanning mode. In the contact scanning mode, the microcantilever deformation of the probe 12 as the feedback parameter is 0.1-2nm, and the diameter of the contact area interacting with the measured multiferroic material 18 is 10-20nm; in the non-contact scanning mode, The distance between the probe 12 and the measured multiferroic material 18 is 50nm-150nm. Moreover, the working frequency range of the probe 12 is 2kHz-70kHz.

The reason why the AFM in-situ excitation platform 1 in the characterization device of the present invention has the function of in-situ excitation of nanoscale ferroelectric domains and ferromagnetic domain imaging signals is mainly due to the unique inverse piezoelectric effect of multiferroic materials and the magnetoelectric detection probe. The needle 12 interacts directly with the multiferroic material 18 under test. The details will be described below in conjunction with FIG. 2 .

For the micro-area ferroelectric domain imaging signal, the physical process of its excitation can be expressed as follows: the signal generator 14 applies a periodic excitation voltage signal to act on the magnetoelectric detection probe 12 and the measured multiferroic material through the electric domain excitation signal transmission terminal 16 Between the lower surface of the material 18, the magnetoelectric detection probe 12 is controlled by the contact scanning switch control unit 151 of the switching module 15 to perform contact scanning on the surface of the multiferroic material 18 to be tested. When the magnetoelectric detection probe 12 and When the tested multiferroic material 18 is in contact, due to the unique inverse piezoelectric effect of the multiferroic material, the tested multiferroic material 18 generates a vibration with the same frequency as the excitation voltage, and the vibration is detected and converted by the magnetoelectric detection probe 12 It is an electrical signal, which is output through the domain structure imaging signal output port 111, and the output signal is directly related to the electrical domain structure information of the measured micro-region. Thus, the in-situ excitation of the imaging signal of the micro-region ferroelectric domain structure is realized.

For micro-area ferromagnetic domain imaging signals, the physical process of its excitation can be expressed as follows: when the periodic excitation voltage signal applied by the signal generator 14 acts on the piezoelectric bimorph 13 through the magnetic domain excitation signal transmission end 17, due to the piezoelectric The effect causes the magnetoelectric detection probe 12 to vibrate. The magnetoelectric detection probe 12 is controlled by the non-contact scanning switch control unit 152 of the switching module 15 to perform non-contact scanning on the surface of the multiferroic material 18 to be tested. When the magnetoelectric detection probe 12 and the multiferroic material to be tested When 18 approaches to a certain distance, a long-range magnetic interaction force will be generated, and the force gradient will cause the vibration state of the magnetoelectric detection probe 12 to change, and the vibration is converted into an electrical signal, which is transmitted through the domain structure imaging signal output port 111 output, the output signal is directly related to the magnetic domain structure information of the measured micro-region. Thus, the in-situ excitation of the imaging signal of the micro-region ferromagnetic domain structure is also realized.

In addition, as shown in FIG. 3 , the in-situ detection platform 2 in the characterization device of the present invention includes: a signal processing unit for receiving the domain structure imaging signal output by the above-mentioned atomic force microscope in-situ excitation platform 1 and increasing the signal amplitude. In the embodiment shown in FIG. 3 , the signal processing unit is a front-end loop processing module 21 that can increase the domain structure imaging signal amplitude and has a protection function to prevent overloading of the next-level circuits and instruments caused by signal distortion.

Moreover, the in-situ detection platform 2 may also include a lock-in amplifier unit connected to the output end of the front-end loop processing module 21 . In the embodiment shown in Figure 3, the lock-in amplifier unit can have the advantages of high measurement sensitivity, strong anti-interference, linear and nonlinear detection functions, and meet the requirements of the system, and can realize high detection of weak domain structure signals. High sensitivity lock-in amplifier 22 for sensitivity detection.

In addition, the in-situ detection platform 2 may also include a processing and display unit for performing data processing on the signal output by the lock-in amplifier unit and displaying the in-situ imaging characterization result of the multiferroic domain structure. The processing and display unit 23 may include a signal processing module and a result display module based on a computer platform, which are used to display the imaging results of micro-region ferroelectric domains and ferromagnetic domain structures in real time.

The in-situ detection platform 2 set up above can effectively realize in-situ real-time detection, processing and display of micro-region ferroelectric domains, ferromagnetic domains and other multiferroic domain structures Characterize the results.

The working process and characterization results of the in-situ integrated characterization device for multiferroic material nanoscale domain structure of the present invention will be described in detail below through specific examples.

Example 1

Using the in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials according to the present invention, the micro-area ferroelectric domain and ferromagnetic domain structure of bismuth ferrite multiferroic materials (hereinafter referred to as tested multiferroic materials) For characterization, Figure 4 shows the test results. Wherein Fig. 4(a) is an AFM image of the surface topography of the tested multiferroic material, and Fig. 4(b) is obtained in situ in the corresponding region of the tested multiferroic material by using the characterization device according to the present invention The image of the ferroelectric domain structure, Figure 4(c) is the image of the ferromagnetic domain structure obtained in situ in the corresponding region of the measured multiferroic material using the characterization device according to the present invention, and Figure 4(d) is the image of the ferromagnetic domain structure using According to the characterization device of the present invention, micro-area piezoelectric response loops obtained by performing piezoelectric response tests on micro-areas with different spontaneous polarization orientations.

Obviously, Figure 4(a) is very different from Figure 4(b) and Figure 4(c). The surface topography image in Figure 4(a) only shows the grain boundary information on the surface of the tested multiferroic material, while the electrical domain structure image in Figure 4(b) clearly shows the distribution of the electrical domain structure, the bright and dark linings in the figure The degrees show the different spontaneous polarization orientations of the electric domain structure, and the magnetic domain structure as shown in Figure 4(c) clearly shows the distribution of the magnetic domain structure. The bright and dark contrasts in the figure show the different spontaneous polarization orientations of the magnetic domain structure.

The above results show that the in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials of the present invention successfully realizes in-situ imaging of ferroelectric domains and ferromagnetic domains on the tested multiferroic materials. While performing in-situ imaging of the multiferroic domain structure, in the ferroelectric domain imaging mode, when the probe is in contact with a certain region of the multiferroic material to be tested, by applying a DC bias to the probe and detecting the The longitudinal displacement of the measured multiferroic material can realize the quantitative characterization of the piezoelectric properties of the micro-area. The two piezoelectric response loops in Figure 4(d) correspond to the "A" and "B" regions marked in Figure 4(b), respectively, showing the nanoscale local pressure of the electric domain structure with different spontaneous polarization orientations. difference in electrical properties. The above results show the feasibility of the in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials of the present invention in terms of quantitative characterization.

The above examples show that the in-situ integrated characterization technology of nanoscale multiferroic domain structures based on atomic force microscopy solves the problem of in-situ excitation of imaging signals of nanoscale multiferroic domain structures (ferroelectric domains and ferromagnetic domains) in multiferroic materials. And the major technical problem of simultaneous detection. This new nano-characterization technology realizes the in-situ excitation and in-situ characterization of nanoscale multiferroic domain structures, and expands the in-situ evaluation function of nano-multiferroics that is not available in existing commercial atomic force microscopes. The magnetoelectric coupling theory of materials, the in-depth development of nano-multiferroic materials and their devices provide important in-situ, quantitative and nano-characterization methods.

In summary, the present invention combines the nano-detection function of the atomic force microscope, the inverse piezoelectric effect of the multiferroic material, and the magnetic interaction between the probe and the multiferroic material to be tested, and establishes a commercial atomic force microscope based on a nanometer Nano-scale in-situ evaluation device for electrical, magnetic excitation and detection characteristics. This new nano-piezomagnetic integrated characterization device not only has unique functions such as in-situ excitation and in-situ characterization of nano-multiferroic domain structure imaging signals, but also has high resolution, It has the advantages of high sensitivity, high signal-to-noise ratio, etc., and its simple structure and strong compatibility are suitable for wide promotion and application. Therefore, the present invention solves the major technical problem of in-situ excitation and detection of nano-ferroelectric domains and ferromagnetic domains in multiferroic materials, and can be used in strategic emerging materials such as nano-materials and functional materials and their industries. .

The present invention can be embodied in various forms without departing from the essential characteristics of the present invention, so the embodiments in the present invention are for illustration rather than limitation, because the scope of the present invention is defined by the claims rather than by the description , and all changes within the range defined in the claims, or within the range equivalent to the range defined in the claims, should be construed as being included in the claims.

Claims (8)

1. the integrated characterization apparatus of the original position of multi-ferroic material nanoscale domain structure, is characterized in that, comprising:

Excite so that the point of excitation of this tested multi-ferroic material produces the atomic force microscope original position stimulating platform of domain structure imaging signal for tested multi-ferroic material being carried out to the original position of multiferroic domain structure;

Described domain structure imaging signal is carried out to the in situ detection platform of the in situ imaging characterization result of original position detection in real time and data processing the described multiferroic domain structure of demonstration in real time.

2. the integrated characterization apparatus of original position of multi-ferroic material nanoscale according to claim 1 domain structure, is characterized in that, described atomic force microscope original position stimulating platform comprises:

Possesses the atomic force microscope platform of the magnetic bases of the described tested multi-ferroic material of mounting;

For described tested multi-ferroic material being scanned to detect the probe of the described domain structure imaging signal that its point of excitation produces;

For generation of the signal generating unit putting on respectively on described magnetic bases and probe to carry out the pumping signal that described original position excites;

For by from described probe in detecting to described domain structure imaging signal be sent to the signal output unit of described in situ detection platform.

3. the integrated characterization apparatus of original position of multi-ferroic material nanoscale according to claim 2 domain structure, is characterized in that, described atomic force microscope original position stimulating platform also comprises:

The handover module that the scan pattern of described probe is switched between contact type scanning pattern and non-contact scanning pattern.

4. the integrated characterization apparatus of original position of multi-ferroic material nanoscale according to claim 3 domain structure, is characterized in that, described handover module comprises:

In magnetic domain imaging process, close the contact type scanning switch control unit of described contact type scanning pattern for opening described contact type scanning pattern in electricdomain imaging process; With

In described electricdomain imaging process, close the non-contact scanning switch control unit of described non-contact scanning pattern for opening described non-contact scanning pattern in described magnetic domain imaging process.

5. the integrated characterization apparatus of original position of multi-ferroic material nanoscale according to claim 4 domain structure, is characterized in that, also comprises the piezoelectric bimorph of being located between described signal generating unit and described probe.

6. the integrated characterization apparatus of original position of multi-ferroic material nanoscale according to claim 3 domain structure, it is characterized in that, described probe is magnetoelectricity detector probe, under described contact type scanning pattern, described probe is 0.1-2nm as the micro-cantilever deformation quantity of feedback parameters, with the contact area diameter of described tested multi-ferroic material interaction be 10-20nm; Under described non-contact scanning pattern, the distance between described probe and described tested multi-ferroic material is 50nm-150nm.

7. the integrated characterization apparatus of original position of multi-ferroic material nanoscale according to claim 6 domain structure, is characterized in that, the operating frequency range of described probe is 2kHz-70kHz.

8. according to the integrated characterization apparatus of original position of the multi-ferroic material nanoscale domain structure described in any one in claim 1 to 7, it is characterized in that, described in situ detection platform comprises:

The signal processing unit that is used for receiving the described domain structure imaging signal of described atomic force microscope original position stimulating platform output and improves this signal amplitude;

The lock-in amplifier unit that the signal of described signal processing unit output is detected;

The signal that described lock-in amplifier unit is exported carries out data processing and shows processing and the display unit of the in situ imaging characterization result of described multiferroic domain structure.

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