CN103887223A - Method for reducing metal pollution in furnace tube technology - Google Patents
Method for reducing metal pollution in furnace tube technology Download PDFInfo
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- CN103887223A CN103887223A CN201410090750.2A CN201410090750A CN103887223A CN 103887223 A CN103887223 A CN 103887223A CN 201410090750 A CN201410090750 A CN 201410090750A CN 103887223 A CN103887223 A CN 103887223A
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- boiler tube
- pollutes
- depletion layer
- tube process
- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a method for reducing metal pollution in a furnace tube technology. A silicon wafer with a shallow groove isolation structure is provided; an oxide layer is prepared on the exposed surface of the silicon wafer, and then a transition barrier layer covering the surface of the oxide layer is prepared; a heating processing process is carried out, the transition barrier layer is removed, and the transition barrier layer is removed by using H3PO4. According to the method for reducing the metal pollution in the furnace tube technology, the transition barrier layer is added and formed after the side wall oxide layer is formed in the shallow groove isolation structure and before a high-temperature annealing process, due to the fact that the transition barrier layer is high in compactness, the transition barrier layer can prevent metal impurities from diffusing to the silicon wafer in the heating processing process, in this way, the metal pollution of silicon wafer products is reduced effectively, and the product yield is improved.
Description
Technical field
The present invention relates to a kind of semiconductor technology, relate in particular to a kind of method that the long-time boiler tube process metal of high temperature pollutes that reduces.
Background technology
In existing chip production process, usually have the introducing of metal impurities, thereby cause the reduction of chip yield.Such as at CMOS Image Sensors(CIS) in, because the introducing of metal impurities has caused Dark Current, cause forming white point in image, specifically as shown in Figure 1, wherein, 10 is silicon chip, 12 for being distributed in the metal impurities on silicon chip.High temperature and long working all can make metallic pollution significantly raise, and the metallic pollution of how to prevent high temperature and long working to cause is to reduce the most important ring that boiler tube process metal pollutes.
Fig. 2 is the surface of silicon chip and the metallic pollution schematic diagram of shallow-layer in existing boiler tube technology.Particularly, existing process is to have introduced a large amount of metal impurities (approximately 1 in the process of the long-time boiler tube annealing of high temperature
e10atoms/cm
2).Because metal impurities have high diffusion coefficient in silicon dioxide and silicon, after long-time high-temperature heat treatment process, board itself and metal impurities silicon chip surface can penetrate silicon dioxide and enter into the depths of silicon substrate, become as permanent impurity, cause the reduction of chip performance and yield.As shown in Figure 5.In manufacturing process, the surface of prepared silicon chip and the metallic pollution of shallow-layer can be diffused into rapidly the depths of silicon chip after follow-up heat treatment, all form the defect of metallic pollution in surface, shallow-layer and the depths of silicon chip.The metallic pollution that is diffused into silicon chip depths is difficult to be removed again, along with the carrying out of technique also can form the accumulation of metal impurities.The existence that metal impurities pollute can have influence on the performance of chip, causes the reduction of product yield.Therefore, reduce the metal impurities that in chip production process, technique itself causes and pollute, the yield that improves chip is significant.
High-temperature thermal annealing step is to introduce the most serious step of metallic pollution, and the metal impurities diffusion that reduces this step is the method for topmost reduction metallic pollution.
Summary of the invention
The invention discloses a kind of method that boiler tube process metal pollutes that reduces, in order to reduce the diffusion of metal impurities in high-temperature annealing step, thereby reduce metallic pollution, reduce the problem that affects product yield.
Above-mentioned purpose of the present invention is achieved through the following technical solutions:
One silicon chip with shallow groove isolation structure is provided;
Prepare after an oxide layer on the surface exposing in described silicon chip, continues the depletion layer on preparation one covering described oxide layer surface;
Continue, after Technology for Heating Processing, to remove described depletion layer;
Wherein, described depletion layer is carrying out can preventing that metal impurities from diffusing in described silicon chip in described Technology for Heating Processing.
Further, in above-mentioned technical scheme, also comprise the following steps:
Adopt HDP(High Density Plasma, high-density plasma) filling shallow groove isolation structure.
The method that reduction boiler tube process metal as above pollutes, wherein, forms oxide layer by ISSG oxidation technology.Described oxide layer is silicon oxide layer.
The method that reduction boiler tube process metal as above pollutes, wherein, above-mentioned side wall oxide layer can be used for repairing the silicon damage of shallow groove isolation structure in etching process.
The method that reduction boiler tube process metal as above pollutes, wherein, the depletion layer that described preparation one covers described oxide layer surface adopts boiler tube Low Pressure Chemical Vapor Deposition, forms depletion layer; Described depletion layer is preferably the one in silicon nitride layer, silicon dioxide layer, most preferably is silicon nitride layer;
Wherein, silicon nitride is a kind of film of densification, and due to the more effective diffusion that prevents metal impurities of compactness of silicon nitride film, therefore, metal impurities spread and are difficult in silicon nitride, as depletion layer, can effectively prevent the diffusion of metal impurities.
The method that reduction boiler tube process metal as above pollutes, wherein, adopts the method for low-pressure chemical vapor deposition (Low-pressure Chemical Vapor Deposition, LPCVD) to prepare silicon nitride film, and its reaction equation is as follows:
SiH
2Cl
2+NH
3→Si
3N
4+NH
4Cl+H
2
The method that reduction boiler tube process metal as above pollutes, wherein, the technological temperature of its low-pressure chemical vapor deposition is preferably 600-800 DEG C, more preferably 650-800 DEG C, more preferably 650-770 DEG C; Its operation pressure is preferably 0.2-0.4torr, more preferably 0.25-0.35torr.
The method that reduction boiler tube process metal as above pollutes, wherein, the temperature of the annealing in process described in step 4 is preferably 1000-1500 DEG C, more preferably 1000-1100 DEG C, the time of annealing in process is preferably 1-3h, and more preferably 1.5-2.5h, most preferably is 2h.
Above-mentioned annealing in process can be used for reducing the defect in silica interface and silicon body, thereby improves product yield.
The method that reduction boiler tube process metal as above pollutes, wherein, in above-mentioned step 5, specifically can adopt standard H
3pO
4remove described depletion layer.
In sum, the present invention reduces the method for boiler tube process metal pollution by forming in shallow groove isolation structure structure after side wall oxide layer, and before carrying out high-temperature annealing process, add formation depletion layer, with the diffusion in silicon chip surface and depths to minimizing metal impurities, thereby effectively reduce the metallic pollution of silicon chip product, improve product yield.
Brief description of the drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that the present invention and feature thereof, profile and advantage will become.
Fig. 1 is the schematic diagram of the Dark Current that the introducing due to metal impurities causes in technological process;
Fig. 2 is the surface of silicon chip and the metallic pollution schematic diagram of shallow-layer in existing boiler tube technology;
Fig. 3 is the process chart that the present invention reduces the method for boiler tube process metal pollution;
Fig. 4 A-F is that the present invention reduces the process schematic diagram that boiler tube process metal pollutes;
Fig. 5 A is that the present invention reduces the method gained of boiler tube process metal pollution without the metal impurities distribution schematic diagram of the silicon chip of the high temperature anneal;
Fig. 5 B is the metal impurities distribution schematic diagram that the present invention reduces the silicon chip of the process the high temperature anneal of the method gained of boiler tube process metal pollution.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described:
Fig. 3 is the process chart that the present invention reduces the method for boiler tube process metal pollution, refer to Fig. 3, a kind of method that reduces the pollution of boiler tube process metal, in order to reduce the diffusion of metal impurities in high-temperature annealing step, thereby reduction metallic pollution, improves and affects product yield.
Specifically be achieved through the following technical solutions: a silicon chip 10 with shallow groove isolation structure 12 is provided; In the interior formation side wall of described shallow groove isolation structure 12 oxide layer 20; Preparation one is covered in the depletion layer 30 on described oxide layer 20 surfaces; To boiler tube annealing in process; Adopt H
3pO
4remove shallow-trench isolation side wall depletion layer 30.
Further, adopt HDP to fill shallow groove isolation structure 12, obtain required product silicon chip.
Fig. 4 A-F is that the present invention reduces the method schematic diagram that boiler tube process metal pollutes, and in conjunction with Fig. 4 A-F, the present invention is described further, particularly:
Fig. 4 A is that the present invention reduces in the method for boiler tube process metal pollution, adopt the method for dry etching on a silicon chip 10, to prepare the schematic diagram that forms shallow groove isolation structure 12, refer to Fig. 4 A, on silicon chip 10, carry out dry etching, also have silicon dioxide layer 101 on the top layer of silicon chip 10, and nitrogen silicon layer 102.
Fig. 4 B is that the present invention reduces in the method for boiler tube process metal pollution, in the schematic diagram of the interior formation side wall of shallow groove isolation structure 12 oxide layer 20 of above-mentioned matrix silicon chip 10, refer to Fig. 4 B, in the present invention, the concrete ISSG of employing oxidation technology forms side wall oxide layer 20, wherein forms the silicon that side wall oxide layer 20 is effective to repair shallow groove isolation structure 12 in etching process and damages.
Fig. 4 C is that the present invention reduces the method that boiler tube process metal pollutes, in matrix silicon chip 10, form the schematic diagram of the depletion layer 30 of shallow groove isolation structure 12, adopt the method for boiler tube low pressure gas phase deposition (LPCVD) to form the depletion layer 30 of shallow-trench isolation side wall oxide layer 20, described depletion layer 30 covers in side wall oxide layer 20, depletion layer 30 for the reaction equation that silicon nitride forms silicon nitride depletion layer 30 specific as follows:
SiH
2Cl
2+NH
3→Si
3N
4+NH
4Cl+H
2
The technological temperature of its low-pressure chemical vapor deposition of method that described reduction boiler tube process metal pollutes can be 600-800 DEG C, also can be 650-800 DEG C, can also be 650-770 DEG C, as 650 DEG C, 700 DEG C, 680 DEG C, 720 DEG C, 740 DEG C, 750 DEG C, 770 DEG C etc.; Its operation pressure can be 0.2-0.4torr, can also be 0.25-0.35torr, as 0.25torr, 0.28torr, 0.30torr, 0.31torr, 0.33torr, 0.35torr etc.
Fig. 4 D is that the present invention reduces in the method for boiler tube process metal pollution, matrix silicon chip 10 is heat-treated to technique, wherein said Technology for Heating Processing is the process of annealing in process, the temperature of wherein said annealing in process can be 1000-1500 DEG C, can also be 1000-1100 DEG C, as 1000 DEG C, 1020 DEG C, 1070 DEG C, 1030 DEG C, 1100 DEG C etc., the time of annealing in process can be 1-3h, can also be 1.5-2.5h, as 1.5h, 1.7h, 2h, 2.1h, 2.3h, 2.5h etc., optimum is 2h.Described annealing in process can be used for reducing the defect of silica interface and silicon body inside, thereby improves product yield.
Fig. 4 E is that the present invention reduces in the method that boiler tube process metal pollutes, matrix silicon chip 10 remove after the depletion layer 30 of shallow-trench isolation side wall layer 20 schematic diagram, specifically can adopt standard H
3pO
4remove the depletion layer 30 of described shallow-trench isolation side wall layer 20.
The present invention reduces in the method for boiler tube process metal pollution, also comprises and adopts HDP medium 40 to fill shallow groove isolation structure 12, refers to Fig. 4 F.
The method that reduction boiler tube process metal described in the embodiment of the present invention pollutes, the Metal Distribution before and after high temperature furnace pipe is processed is as shown in Fig. 5 A-B.
Wherein, Fig. 5 A is that the present invention reduces the method gained of boiler tube process metal pollution without the metal impurities distribution schematic diagram of the silicon chip of the high temperature anneal, and in Fig. 5 A, metal impurities 11 are uniformly distributed in the surface of depletion layer 30.Fig. 5 B is that the present invention reduces the method gained of boiler tube process metal pollution through metal impurities 11 distribution schematic diagrams of the silicon chip 10 of the high temperature anneal, from Fig. 5 B, after the high temperature anneal, metal impurities 11 enter in depletion layer 30, and are bound among depletion layer 30 silicon nitrides.
Described depletion layer 30 is silicon nitride, because silicon nitride is a kind of film of densification, due to the more effective diffusion that prevents metal impurities of compactness of silicon nitride film, therefore, metal impurities 11 spread and are difficult in silicon nitride, as depletion layer 30, can effectively prevent the diffusion of metal impurities 11.The existence of silicon nitride depletion layer 30, effectively metal impurities 11 are blocked in outside the matrix of silicon chip 10, and metal impurities 11 are strapped among depletion layer silicon nitride 30, thereby can effectively stop due to furnace tube high temperature long heat treatment cause with matrix silicon chip 10 on the diffusion of metal impurities.After the high temperature anneal, pass through again wet-cleaned (H
3pO
4solution), get rid of silicon nitride depletion layer 30 and metal impurities wherein 11.
In sum, the present invention adopts technique scheme, can effectively reduce the diffusion of metal impurities 11 in silicon chip 10 surfaces and depths, thereby effectively reduces the metallic pollution of silicon chip product, improves product yield.
Preferably, the method that reduction boiler tube process metal of the present invention pollutes, can be based on technology platforms such as Logic, CIS, Flash or eFlash, in the semiconductor technology of the technology nodes such as application 65/55nm, 45/40nm, 32/28nm or <=22nm.
It should be appreciated by those skilled in the art that those skilled in the art can realize described variation example in conjunction with prior art and above-described embodiment, do not repeat them here.Such variation example does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and the equipment of wherein not describing in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or being revised as the equivalent embodiment of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. reduce the method that boiler tube process metal pollutes, it is characterized in that, described method comprises:
One silicon chip with shallow groove isolation structure is provided;
Prepare after an oxide layer on the surface exposing in described silicon chip, continues the depletion layer on preparation one covering described oxide layer surface;
Continue, after Technology for Heating Processing, to remove described depletion layer;
Wherein, described depletion layer is carrying out can preventing that metal impurities from diffusing in described silicon chip in described Technology for Heating Processing.
2. the method that reduction boiler tube process metal according to claim 1 pollutes, is characterized in that, also comprises and adopts HDP to be filled in shallow groove isolation structure.
3. the method that reduction boiler tube process metal according to claim 1 pollutes, is characterized in that, forms described oxide layer by ISSG oxidation technology.
4. the method that reduction boiler tube process metal according to claim 1 pollutes, is characterized in that, adopts boiler tube Low Pressure Chemical Vapor Deposition to form described depletion layer.
5. the method that reduction boiler tube process metal according to claim 4 pollutes, is characterized in that, described depletion layer is silicon nitride layer.
6. the method that reduction boiler tube process metal according to claim 5 pollutes, is characterized in that, the temperature of described low-pressure chemical vapor deposition is 600-800 DEG C, and pressure is 0.2-0.4torr.
7. the method that reduction boiler tube process metal according to claim 1 pollutes, is characterized in that, described Technology for Heating Processing is annealing treating process, and the temperature of wherein said annealing treating process is 1000-1500 DEG C, and the time is 1-3h.
8. the method for polluting according to the arbitrary described reduction boiler tube process metal of claim 1～7, is characterized in that, adopts H
3pO
4remove described depletion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410090750.2A CN103887223A (en) | 2014-03-12 | 2014-03-12 | Method for reducing metal pollution in furnace tube technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410090750.2A CN103887223A (en) | 2014-03-12 | 2014-03-12 | Method for reducing metal pollution in furnace tube technology |
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| CN103887223A true CN103887223A (en) | 2014-06-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304663A (en) * | 2015-10-27 | 2016-02-03 | 上海华力微电子有限公司 | Method for reducing metal pollution of working area of contact image sensor |
| CN105374840A (en) * | 2015-10-27 | 2016-03-02 | 上海华力微电子有限公司 | Method to reduce metal pollution in work area of contact-type image sensor |
Citations (3)
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|---|---|---|---|---|
| US6114730A (en) * | 1997-05-16 | 2000-09-05 | Texas Instruments Incorporated | Semiconductor device and its manufacturing method |
| US20020070421A1 (en) * | 1997-12-31 | 2002-06-13 | Ashburn Stanton Petree | Embedded gettering layer in shallow trench isolation structure |
| CN1614762A (en) * | 2003-11-06 | 2005-05-11 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device |
-
2014
- 2014-03-12 CN CN201410090750.2A patent/CN103887223A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114730A (en) * | 1997-05-16 | 2000-09-05 | Texas Instruments Incorporated | Semiconductor device and its manufacturing method |
| US20020070421A1 (en) * | 1997-12-31 | 2002-06-13 | Ashburn Stanton Petree | Embedded gettering layer in shallow trench isolation structure |
| CN1614762A (en) * | 2003-11-06 | 2005-05-11 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304663A (en) * | 2015-10-27 | 2016-02-03 | 上海华力微电子有限公司 | Method for reducing metal pollution of working area of contact image sensor |
| CN105374840A (en) * | 2015-10-27 | 2016-03-02 | 上海华力微电子有限公司 | Method to reduce metal pollution in work area of contact-type image sensor |
| CN105304663B (en) * | 2015-10-27 | 2018-08-24 | 上海华力微电子有限公司 | A method of reducing contact-type image sensor workspace metallic pollution |
| CN105374840B (en) * | 2015-10-27 | 2019-01-04 | 上海华力微电子有限公司 | A method of reducing contact-type image sensor workspace metallic pollution |
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Application publication date: 20140625 |
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