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CN103872026A - 用于实现超薄和其他低z产品的焊盘侧加强电容器 - Google Patents

用于实现超薄和其他低z产品的焊盘侧加强电容器 Download PDF

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CN103872026A
CN103872026A CN201310659460.0A CN201310659460A CN103872026A CN 103872026 A CN103872026 A CN 103872026A CN 201310659460 A CN201310659460 A CN 201310659460A CN 103872026 A CN103872026 A CN 103872026A
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M·K·罗伊
M·J·曼努沙洛
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Abstract

本申请公开了用于实现超薄和其他低Z产品的焊盘侧加强电容器。本文通常描述了用于最小化超薄IC封装的产品的系统、设备和方法的实施例。在一些实施例中，装置包括安装在封装基底上的IC，以及安装在封装基底上的电容性加强件子组件。电容性加强件子组件包括电连接至IC的触点的多个电容性元件。

Description

用于实现超薄和其他低Z产品的焊盘侧加强电容器
技术领域
实施例关于集成电路（IC）的封装。一些实施例涉及减少IC封装的翘曲。
背景
存在对增加集成电路（IC）的功能和在更小的封装中提供这些越来越复杂的IC的持续需求。然而，使用这些IC的电子系统的制造可包括将经封装的IC暴露至环境压力。例如，电子系统的制造可包含组装经封装的IC和将经封装的IC结合到电子系统组件中的多个热循环。随着IC的封装的厚度减小，环境压力的不利影响可成为制造问题的主因。这些不利影响可包括可致使经封装的IC不能使用的变得畸形的经封装的IC。因此，存在对提供对环境影响更具鲁棒性的经封装的集成电路的系统和方法的一般需求。
附图简述
图1为用于最小化超薄IC封装的产品的翘曲的设备的示例的部分图示；
图2为用于最小化超薄IC封装的产品的翘曲的另一设备的示例的部分图示；
图3为超薄电子器件的另一示例的部分图示；以及
图4示出了形成超薄IC封装的方法的示例的流程图。
详细描述
以下描述和附图充分地示出了具体实施例以使本领域技术人员能够实现它们。其他实施例可包含结构、逻辑、电气、工艺和其他变化。一些实施例的部分和特征可被包括在其他实施例的部分和特征中，或替代其他实施例的部分和特征。权利要求中所陈述的实施例包含那些权利要求的所有可用等效方案。
如本文前面所解释的，IC封装的尺寸和厚度继续减少。这已经导致一些表面贴装的IC封装被称为超薄或低Z的以表示小Z尺寸。超薄封装可指约500微米（μm）或以下的封装高度。用于形成超薄封装的一种方法为无芯封装。在传统IC封装中，IC被安装在诸如基底之类的芯材料上。然后，在芯上建立附加的层以将IC连接分配到封装互连。相反，无芯封装不具有芯。替代地，仅建立层被用于产生无芯基底。这减少了基底和经封装的IC的高度尺寸。
基底的薄度可导致可能易弯曲的封装。经封装的IC的制造可包含多个热循环步骤。例如，基底可被加热以将焊料隆起焊盘（例如，倒装芯片或C4焊料隆起焊盘）添加到基底。基底可再次被一次或多次加热以用于管芯布置和焊料回流。如果环氧树脂被用于组装工艺中，则可添加另一循环。又一热循环可用于将经封装的IC结合到电子系统组件中。这些多个热循环可导致基底和经封装的IC中的一个或两个翘曲。
图1为用于最小化超薄IC封装产品的翘曲的设备100的示例的部分图示。设备100包括安装在封装基底110上的IC105。在一些示例中，设备可包括安装在封装基底110上的一个以上IC，诸如中央处理单元（CPU）和一个或多个存储器件IC。例如，封装基底110可以为超薄封装基底或低Z封装基底，诸如无芯封装基底。设备100还包括电容式加强件子组件115。
电容式加强件子组件115包括电连接至IC105的触点的多个电容性元件。到封装基底110的子组件的附连或安装使得组装的封装基底对翘曲更有抵抗力。电容元件120可包括在电连接至IC的触点的滤波电路。因此，子组件的电容性元件可代替通常用于过滤噪声的任何表面贴装电容器。
例如，电容性元件可嵌入到具有绝缘性能的材料中，诸如陶瓷材料或聚合物材料。诸如不锈钢之类的非绝缘材料可被用于加强基底，但这可能会使包括在加强件中的电容性元件复杂化。例如，电容性元件可能需要以电绝缘材料涂覆。并且，由于电容性元件被包括在加强件中，因此在一个步骤中添加加强件和电容器，而不是在多个步骤中添加加强件（例如，单片钢加强件）和放置以及回流表面贴装电容器。这本质上减少了热循环的数量，在制造期间封装被暴露于热循环。
在图1所示的示例中，电容式加强件子组件115大体上围绕封装基底110的周界设置，并且IC安装在电容式加强件子组件115的中间。电容式加强件子组件115可从封装基底110的周界稍向内设置，并且仍为封装基底110提供支撑或加强。示例还示出了单片子组件，但如果需要的话，电容式加强件子组件115可包括一个或多个缝隙。所示示例中的IC封装可被用于封装处理器、数字信号处理器（DSP）、专用集成电路（ASIC）或SOC。图1的示例还示出了一个或多个IC可被安装在封装基底110的顶侧并且电容式加强件子组件115也安装在封装基底110的顶侧，但可使用其他布置。
图2为用于最小化超薄IC封装产品的翘曲的另一设备200的部分图示。设备200包括安装在封装基底210的顶侧上的IC（未示出）和设置在设备200的底侧上的焊料隆起焊盘225。设备200还包括安装在封装基底210的底侧上的电容性加强件子组件215。子组件的电容元件可通过包括在封装基底210中的层和通孔电连接至IC的触点。图中的示例示出了形成在底侧上的焊料隆起焊盘为球栅阵列（BGA）电触点，但是焊料隆起焊盘可包括BGA电触点、平面网格阵列（land grid array）电触点、引脚网格阵列电触点等等中的至少一个。电容性加强件子组件215的高度低于焊料隆起焊盘的高度以便于将设备200安装至另一组件，诸如另一基底或印刷电路板（PCB）。
图3为超薄电子器件300的另一示例的部分图示。器件300可包括安装在封装基底310的第一或顶侧上的IC（未示出）和安装在封装基底的第二或底侧上的电感器330。电感器330的迹线或导线可形成为封装基底310的层。在某些示例中，可利用微机电系统（MEMS）方法在封装基底上形成迹线或导线作为悬置电感器。在悬置电感器中，迹线可形成于封装基底的平面上的牺牲层上。移除牺牲层可留下悬置（例如，在空气中）在封装基底上的电感器。悬置电感器可具有比平面电感器改进的频率响应。
封装基底310的其他层可提供到IC的互连。电容性加强件子组件115安装在具有电感器330的封装基底310的第二侧上。示例中的器件300可以为形成于超薄封装中的射频集成电路（RFIC）。RFIC可用于蜂窝电话和局域网设备或个域网设备。
由于图1-3的示例中的经封装的IC的高度低，所以在诸如平板计算机之类的低高度的电子系统中包括该IC封装是有利的。电子系统可包括安装在印刷电路板（PCB）（例如，母板）上的半导体子组件。半导体子组件可包括安装到一个或多个超薄封装基底的一个或多个IC以形成超薄半导体子组件。半导体子组件可包括安装在一个或多个超薄封装基板上的电容性加强件子组件。在一些示例中，超薄封装基底是无芯基底，并且在无芯基底上形成诸如BGA触点的焊料隆起焊盘以形成无芯子组件。如果电容性加强件子组件安装在封装基底的相同侧上作为BGA触点，则BGA焊球间距将确定无芯子组件到PCB间隙，并且电容式加强件子组件的高度应当低于BGA焊球间距。
图4示出了形成超薄IC封装的方法400的示例的流程图。在框405，将IC设置在封装基底上。在一些示例中，封装基底为无芯基底。封装基底可包括焊料隆起焊盘，诸如，C4焊料隆起焊盘或管芯侧焊料隆起焊盘。可在IC被设置到封装基底上之前将焊剂喷涂到焊料隆起焊盘。
在框410，将电容式加强件子组件设置在封装基底上。电容性加强件子组件可包括本文前面所述的任何示例。在一些示例中，电容性加强件子组件大体上围绕封装基底的第一或顶侧的周界设置，以及IC设置于第一侧上的电容性基底子组件的中间，诸如图1示例中所示。在某些示例中，多个IC设置在封装基底的第一侧上。
在一些示例中，封装基底包括形成于底侧上的焊料触点或焊料隆起焊盘（例如，BGA焊料触点）。电容性加强件子组件可设置在底侧上。如图2的示例中所示，电容性加强件子组件可围绕底侧的周界设置，以及焊料隆起焊盘大体上在电容性加强件子组件的中间，并且IC可设置在封装基底的顶侧上。焊料隆起焊盘可以与图2的示例中所示的图案不同的其他图案形成。
当设置IC和电容性加强件子组件（例如，通过拾取和放置过程）时，在框415，可回流形成于封装基底上的焊料隆起焊盘以将IC和电容性加强件子组件安装在封装基底上。然后，经封装的IC和基底组件可经受去焊剂过程。经封装的IC和基底组件还可经受包含分配、流动和固化底部填充材料的底部填充过程。由于电容器与电容性加强件子组件成整体，因此不需要用于放置管芯侧表面贴装电容器和用于放置和用环氧树脂胶合单独的加强件的单独步骤。因此，可通过利用电容性加强件子组件减少组装过程中的步骤的数量。
在一些示例中，方法400可包括安装无源电子部件，诸如将电感器安装到封装基底上。回流过程可包括回流封装基底以将电感器安装到基底的第二侧上，诸如图3的示例中所示。在某些示例中，底部填充过程可被包括在将电感器安装至封装基底的步骤中。诸如电阻器和电容器之类的其他无源部件也可安装于基底的第二侧。在某些示例中，诸如另一IC之类的有源部件可安装在基底的第二侧上。
从本文所述的系统、方法和设备可以看出电容性加强件将为超薄基底提供支撑以防止翘曲并且不损害基底上的可用基板面。
附加说明
上面详细描述包括参照附图附图，附图形成详细描述的一部分。附图通过例示示出可实现本发明的具体实施例。在本文中，这些实施例也被称为“示例”。本文献中所涉及的所有公开、专利、和专利文献通过引用整体结合于此，好像通过引用单独地结合。本文献和通过引用所结合的那些文献之间的不一致的用法的情况，在结合的引用中的用法应当被认为是对本文献的用法的补充；对于不可调和的不一致，以本文献中的用法为准。
提供摘要以符合37C.F.R.第1.72(b)章节，该章节要求摘要允许读者查明技术公开内容的本质和要点。该摘要是以它不用于限制或解释权利要求的范围或含义的理解而提交的。以下权利要求在此明确地被包括到详细描述中，其中各个权利要求独立作为单独实施例。并且，在一些权利要求书中，术语“包括”和“包含”是开放式的，即，系统、设备、制品或过程包括除之后列出的那些元素之外的元素，在权利要求中的这种术语仍然被视为落在权利要求的范围之内。此外，术语“第一”、“第二”、“第三”等仅用作标记，而不旨在对他们的对象施加数值要求。

Claims (20)

1.一种装置，包括：
集成电路（IC），所述集成电路（IC）安装在IC封装基底上；
电容性加强件子组件，所述电容性加强件子组件安装在IC封装基底上，其中所述电容性加强件子组件包括电连接至IC的触点的多个电容性元件。
2.如权利要求1所述的装置，其特征在于，所述IC封装基底是无芯的，并且其中所述电容性加强件子组件大体上围绕IC封装基底的周界设置。
3.如权利要求1所述的装置，其特征在于，所述电容性加强件子组件是单片的并且包括嵌入在陶瓷材料中的多个陶瓷元件。
4.如权利要求1所述的装置，其特征在于，所述电容性加强件子组件是单片的并且包括嵌入在聚合物材料中的多个陶瓷元件。
5.如权利要求1所述的装置，其特征在于，所述IC安装在所述封装基底的第一侧上并且所述电容性加强件子组件也安装在所述IC封装基底的第一侧上。
6.如权利要求1所述的装置，包括：
IC，所述IC安装在IC封装基底的第一侧上；以及
焊料隆起焊盘，所述焊料隆起焊盘设置在所述IC封装基底的第二侧上，以及其中电容性加强件安装在所述IC封装基底的第二侧上。
7.如权利要求6所述的装置，其特征在于，
其中所述焊料隆起焊盘被包括在球栅阵列电触点、平面网格阵列电触点或引脚网格阵列电触点中的至少一个中，以及
其中所述电容性加强件子组件的高度低于球栅阵列电触点、平面网格阵列电触点或引脚网格阵列电触点中的至少一个的高度。
8.如权利要求1-6中任一项所述的装置，其特征在于，电容性元件被包括在电连接至所述IC的触点的滤波电路中。
9.如权利要求1所述的装置，包括：
IC，所述IC安装在IC封装基底的第一侧上；以及
电子部件，所述电子部件安装在所述IC封装基底的第二侧上，以及其中所述电容性加强件子组件安装在所述IC封装基底的第二侧上。
10.如权利要求9所述的装置，其特征在于，所述电子部件包括电感器，以及所述IC包括射频集成电路（RFIC）。
11.如权利要求1-6中任一项所述的装置，其特征在于，所述IC包括中央处理单元。
12.一种方法，包括：
将集成电路（IC）设置在IC封装基底上；
将电容性加强件子组件设置在所述IC封装基底上，以及
回流形成于所述封装基底上的焊料触点以将所述IC和电容性加强件子组件安装在所述封装基底上。
13.如权利要求12所述的方法，其特征在于，将所述IC和所述电容性加强件子组件设置在所述IC封装基底上包括：
大体上围绕所述封装基底的周界设置所述电容性加强件子组件；以及
将所述IC定位在所述电容性加强件子组件的中间。
14.如权利要求12或13所述的方法，其特征在于，所述IC封装基底包括所述IC封装基底的底侧上的球栅阵列电触点、平面网格阵列电触点或引脚网格阵列电触点中的至少一个，其中安装IC包括将所述IC安装到所述IC封装基底的顶侧，以及其中安装所述电容性加强件子组件包括将所述电容性加强件子组件安装到所述IC封装基底的底侧上。
15.如权利要求14所述的方法，其特征在于，所述安装所述电容性加强件子组件包括：大体上围绕所述IC封装基底的周界设置所述电容性加强件子组件，并且将球栅阵列电触点、平面网格阵列电触点或引脚网格阵列电触点大体上设置在所述电容性加强件子组件的中间。
16.如权利要求12或13所述的方法，其特征在于，包括将悬置电感器安装至所述IC封装基底，以及其中回流所述焊料触点包括回流所述焊料触点以将所述悬置电感器安装至所述IC封装基底。
17.一种平板计算机，包括：
印刷电路板（PCB）；以及
半导体子组件，所述半导体子组件安装在PCB上，其中所述半导体子组件包括：
封装基底；
至少一个集成电路（IC），所述至少一个集成电路（IC）安装在所述封装基底上；
电容性加强件子组件，所述电容性加强件子组件安装在封装基底上，其中所述电容性加强件子组件包括电连接至至少一个IC的触点的多个电容性元件。
18.如权利要求17所述的平板计算机，其特征在于，所述电容性加强件子组件大体上围绕所述封装基底的周界设置。
19.如权利要求18所述的平板计算机，其特征在于，所述电容性加强件子组件被安装至所述封装基底的与所述至少一个IC相同的一侧，以及其中所述至少一个IC被设置在所述电容性加强件子组件的中间。
20.如权利要求18或19所述的平板计算机，其特征在于，所述封装基底包括无芯基底和在所述封装基底的底侧上的球栅阵列焊料触点以形成无芯子组件，其中所述至少一个IC被安装在所述无芯子组件的顶侧，以及其中所述电容性加强件子组件安装在所述无芯子组件的底侧上。
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