CN103869626B - The photoetching imaging polarized compensation device of ultra-high numerical aperture and method - Google Patents
The photoetching imaging polarized compensation device of ultra-high numerical aperture and method Download PDFInfo
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- CN103869626B CN103869626B CN201210528727.8A CN201210528727A CN103869626B CN 103869626 B CN103869626 B CN 103869626B CN 201210528727 A CN201210528727 A CN 201210528727A CN 103869626 B CN103869626 B CN 103869626B
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Abstract
The open a kind of photoetching imaging polarized compensation device of ultra-high numerical aperture of the present invention, including: a light source, for providing an illuminating bundle；One lighting unit, for being adjusted to exposing light beam and irradiating a mask plate by this illuminating bundle；One projection objective, for will transmit through the imaging beam imaging of this mask plate to a silicon chip；One polarization compensation device, for this exposing light beam of Polarization Modulation or/and this imaging beam, this polarization compensation device is between this lighting unit and this mask plate or between this projection objective and this silicon chip.
Description
Technical field
The present invention relates to a kind of super large-scale integration and produce equipment advanced scanning projecting photoetching machine lithographic imaging technique
Field, particularly relates to a kind of photoetching imaging polarized compensation device of high-NA.
Background technology
Along with the development of projection lithography technology, the projection optical system performance of litho machine steps up, and current litho machine is
It is successfully applied to the IC manufacturing field of submicron and deep-submicron resolution.When manufacturing IC chip with photoetching machine
Require that projection objective has higher resolution, to realize the preparation of highly integrated chip.In order to meet to projected light object lens relatively
High-resolution requirement, needs to improve the image-side numerical aperture (NA) of projection objective.But, use the projection of large-numerical aperture
Object lens cause polarized light that the impact of lithographic results is become obvious, use different polarization state lights to carry out in the lines of different directions
Exposure, can improve lithographic results greatly.In order to describe the difference of actual polarization state and ideal expectation polarization state, introduce expectation
Polarized light intensity IPS(Intensity in Preferred State) concept.Expect that polarized light intensity (IPS) is expectation polarization
The light of state seizes the ratio of total light intensity.
In the immersion lithographic machine of ultra-high numerical aperture (NA) litho machine especially NA > 1, the control of polarization is particularly important,
It is control IPS.In high NA litho machine in early days, be concerned is the polarization impact of light source always, and mask and the pupil of PO
Polarization is not concerned.Along with improving constantly of submergence projection objective NA, the IPS that the control of polarization of illumination is reached is generally less than
95%, and the polarization requirements IPS of superelevation NA requires more than 97%, it is impossible to meet optical patterning demand.
Patent US2008/0074632A1 and patent US2009/0128796A1 are proposed Polarization Control in illumination path
Technology.In US2008/0074632 A1, FIG1 ~ FIG11 describes and utilizes polarization state switching device to realize four kinds of conventional illuminations
Pattern traditional lighting, ring illumination, quadrupole illuminating and the Polarization Control of two grades of illuminations；Patent US2009/0128796A1 is in illumination
Light path places linear polariser and optically-active device realizes Polarization Control.These polarization control technology are all to ensure that in mask plane
The polarization direction of illumination is most beneficial for optical patterning, and due to Fresnel effect, material birefringence and plated film in actual PO light path
Impact also can change polarization state, the residual error accumulating value of Polarization aberration can not be ignored, need compensate and control.Especially, projection
The surface of object optical element has all carried out plated film, and current most plated film all uses the film structure of multilayer film.Light
Ripple its polarization state when the generation catadioptric of the interface of each tunic all can occur a certain degree of change, therefore, is setting
The meter stage do not know the refractive index information of each film layer in the case of be impossible accurately calculate the polarization state of light be how with
What the propagation of light beam changed in the optical path, can only estimate in the design process.These unpredictable impacts need
Control with polarization compensation after the actual processing and manufacturing of object lens out.
Summary of the invention
It is an object of the invention to provide a kind of ultra-high numerical aperture and be photo-etched into polarization compensation control device, at object plane or picture
Face or image face are placed polarizing pupil compensating device simultaneously and imaging beam are carried out Polarization Modulation, it is therefore intended that compensate superelevation NA light
The Polarization aberration impact carved in imaging system in PO light path, accurately controls polarization state, improves lithographic results.
In order to realize foregoing invention purpose, the open a kind of photoetching imaging polarized compensation device of ultra-high numerical aperture of the present invention,
Including: a light source, for providing an illuminating bundle；One lighting unit, for being adjusted to exposing light beam by this illuminating bundle and shining
Penetrate a mask plate；One projection objective, for will transmit through the imaging beam imaging of this mask plate to a silicon chip；One polarization compensation
Device, for this exposing light beam of Polarization Modulation or/and this imaging beam, this polarization compensation device is positioned at this lighting unit and this is covered
Between template or between this projection objective and this silicon chip.
Further, some square region that this polarization compensation device is made up of quartz base plate are constituted.This is each square
Define this exposing light beam or/and this imaging beam carries out the X electro-optic crystal to Polarization Modulation on region, this each squared region
Territory forms the variable X in a polarization direction to linear polarizer.Define this exposing light beam or/and this one-tenth in this each square region
As light beam carries out the electro-optic crystal of Y-direction Polarization Modulation, this each square region forms the Y-direction linear polarization that a polarization direction is variable
Device.Define in this each square region this exposing light beam or/and this imaging beam carries out the S electric light crystalline substance to Polarization Modulation
Body, this each square region forms the variable S in a polarization direction to linear polarizer.This square region is by tiny array electrode device
Control, utilizes different voltage optical axis deflection angle differences to change to realize different polarization states.
Present invention simultaneously discloses a kind of photoetching imaging polarized compensation method of ultra-high numerical aperture, including: step one, detection are respectively
The actual polarization state of exposure field；Step 2, according to actual polarization stateWith expectation polarization stateJudge whether out
Begin exposure or compensating polarizing adjustment amount；Step 3, need adjustment amount according to each polariton unitCalculate each subelement
Need the physical quantity adjusted；Step 4, the physical quantity actual polarization state of compensation adjusted according to this each subelement needs.
Further, the method also including step 5, repeating step one to four until making this actual polarization state meet need
Ask.
Compared with prior art, ultra-high numerical aperture disclosed in this invention is photo-etched into polarization compensation and controls device,
Object plane or image planes or image face are placed polarizing pupil compensating device simultaneously and imaging beam are carried out Polarization Modulation, can surpass by effective compensation
Polarization aberration in PO light path impact in high NA photolithographic imaging system, accurately controls polarization state, improves lithographic results, can be by the phase
Hope that polarized light intensity brings up to more than 97%, meet the polarization requirements of superelevation NA, it is achieved resolution and CDU demand.
Accompanying drawing explanation
Can be described in detail by invention below about the advantages and spirit of the present invention and institute's accompanying drawings obtains further
Solve.
Fig. 1 is the structural representation of the lithographic equipment applying polarization compensation device of the present invention；
Fig. 2 is different polarization states direction schematic diagram；
Fig. 3 is that the polarimetry of lithographic equipment compensates and adjusts flow chart；
Fig. 4 is for realizing X-direction polarization compensation device schematic diagram；
Fig. 5 is for realizing X-direction polarization compensation effect schematic diagram；
Fig. 6 is for realizing Y-direction polarization compensation device schematic diagram；
Fig. 7 is for realizing Y-direction polarization compensation effect schematic diagram；
Fig. 8 is for realizing S-polarization compensation device schematic diagram；
Fig. 9 is for realizing S-polarization compensation effect schematic diagram.
Detailed description of the invention
Describe the superelevation numerical aperture for lithographic equipment of a kind of specific embodiment of the present invention below in conjunction with the accompanying drawings in detail
The photoetching imaging polarized compensation device in footpath and method.But, it should it is understood as being not limited to described below this by the present invention
Embodiment, and the technical concept of the present invention can be identical with those known technologies with other known technologies or function other
Technical combinations is implemented.
In the following description, in order to clearly show that structure and the working method of the present invention, will be by many Directional words
Be described, but should by "front", "rear", "left", "right", " outward ", " interior ", " outwards ", " inwardly ", " on ", the word such as D score
Language is interpreted as facilitating term, and is not construed as word of limitation.Additionally, " X-direction " is interpreted as and plane-parallel
Direction, " Y-direction " is interpreted as and plane-parallel the direction vertical with X-direction, and " Z-direction " is interpreted as hanging down with horizontal plane
The direction that direct join and X-direction, Y-direction are vertical.
Fig. 1 is the lithographic equipment structural representation of the polarization compensation device that the present invention applies.As shown in fig. 1, photoetching sets
Standby 100 include for light source 1, it is provided that the illuminator 2 ~ 9 of exposing light beam and mask M, projection objective PL and silicon chip W.For
Superelevation NA photolithographic imaging system, light source 1 generally 193nmArF laser instrument or 248nmKrF laser instrument or other ultraviolet laser.
The light come from laser instrument 1 is propagated along Z-direction, and the cross section on XY face is long fan-shaped hot spot, propagates to beam expander unit 2,
2a and 2b is the lens of different curvature radius, makes to export the light that predetermined target is fan-shaped on light source light path XY cross section after 2b
Speckle.
3 is turnover reflecting mirror, and light transfers to after 3 to be propagated along Y-direction.10 is optically-active device, and 20 is depolarized device.4 are
Diffraction element, 5 and 7 are Zoom optical unit, and 6 is diffraction optical element, and 60 for realizing quadrupole illuminating diffraction optical element, and 61
For realizing ring illumination diffraction optical element, 62 illuminate diffraction optical elements for realizing X to two poles, and 63 shine for realizing Y-direction two pole
Bright diffraction optical element.5,6 together with 7 realize different light illumination modes and difference correlation factor illumination distribution.8 is lenticule battle array
Row, it is achieved Uniform Illumination.9 is light-gathering optics, Uniform Illumination imaging is put at mask plane M.
Projection optical system PL is positioned at below the mask M shown in Fig. 1, and its optical axis AX is parallel to Z-direction.Owing to using
Double telecentric structure also has the refraction type of predetermined drawdown ratio such as 1/5 or 1/4 or refractive and reflective optical system as projected light
System, so when the exposing light beam that illuminator is launched irradiates the mask pattern on mask M, circuit mask pattern is through throwing
Shadow optical system PL becomes the image reduced in the wafer W be coated with photoresist.
As shown in fig. 1,11 is the polarization compensation device between illuminace component and mask, and 13 is between object lens and silicon chip
Polarization compensation device, can carry out Polarization Modulation to imaging beam.Compensation device is typically by multiple polaritons that can control
Unit forms.For compensating polarizing, in addition it is also necessary to device for testing polarization 21 is device for testing polarization, it is positioned in projection objective image planes,
The polarization state of each visual field point can be detected.In Fig. 1,31 are the control unit being controlled each polariton unit, typically
System is performed including detection sensor-based system, Labcard driver system and motor.21 realize polarization compensation together with 31 adjusts.
When litho machine real work, the laser sent from light source 1 is through each element of illuminator 2 ~ 9, in mask plane
The Uniform Illumination of the certain visual field of upper formation.When exposing for different mask graphs, it is inclined that etching system can arrange different expectations
Polarization state.When photo-etching machine exposal vertical bar figure, need to arrange X to polarization state, as shown in Fig. 2-a.Such as photo-etching machine exposal water
During flat bargraphs, need to arrange Y-direction polarization state, as shown in Fig. 2-b.When exposure is simultaneously by the lines of both direction, need S inclined
Shake, polarization state as shown in fig. 2-c. it is desirable that IPS is more than 97% at 45nm node.Different polarization states is required for polarizing with benefit
Repay adjustment.
Fig. 4 is a series of at quartz base plate for realizing X to polarization compensation device scheme schematic diagram, polarization compensation device 11
Several square region 12 of the upper making of 11b are constituted.As shown in Figure 4, each square region can also make imaging
The electro-optic crystal of Shu Jinhang Polarization Modulation；Each square region on polarizing pupil device forms linear polarizer, as 12 its
Polarization direction may utilize tiny array electrode device and makes 12 making alives, as shown in Figure 4 according to different voltage optical axis deflection angles not
Change with realizing different polarization states, to meet the Polarization aberration compensation demand of projection objective.
Fig. 6 is for realizing Y-direction polarization compensation device scheme schematic diagram, and polarization compensation device 13 is a series of at quartz base plate
Several square region 14 of the upper making of 13b are constituted.As shown in Figure 6, each square region can also make imaging
The electro-optic crystal of Shu Jinhang Polarization Modulation；Each square region on polarizing pupil device forms linear polarizer, as 14 its
Polarization direction may utilize tiny array electrode device and makes 14 making alives, as shown in Figure 6 according to different voltage optical axis deflection angles not
Change with realizing different polarization states, to meet the Polarization aberration compensation demand of projection objective.
Fig. 8 is a series of at quartz base plate for realizing S to polarization compensation device scheme schematic diagram, polarization compensation device 15
Several square region 16 of the upper making of 15b are constituted.As shown in Figure 8, each square region can also make imaging
The electro-optic crystal of Shu Jinhang Polarization Modulation；Each square region on polarizing pupil device forms linear polarizer, as 16 its
Polarization direction may utilize tiny array electrode device and makes 14 making alives, as shown in Figure 8 according to different voltage optical axis deflection angles not
Change with realizing different polarization states, to meet the Polarization aberration compensation demand of projection objective.
Concrete polarization compensation method of adjustment is as it is shown on figure 3, the step of this polarization compensation method of adjustment is:
S1: first detected the actual polarization state of current each visual field by device for testing polarization 21；
S2: when exposing different figures, system has corresponding expectation polarization state, actual in a control program
Polarization stateExpectation polarization state compared with；If<, then it is directly entered S5 and starts exposure, if>, it is necessary to determine polariton unit N and need polarize adjustment amount, enter S3；
S3: need adjustment amount according to each polariton unit, control unit calculates each subelement needs adjustment
Physical quantity；According to subelement adjustment amount, the electric motor units of control system drive and realize；
S4: after having adjusted, detects polarization state again, if be unsatisfactory for repeat the first step to the 5th step, make polarization state
Meet demand.
When there is birefringence or when affecting of plated film in projection objective, the polarization state testing out reality is 14a institute in Fig. 7
The polarization state shown, it can be seen that 14a polarization state there are differences with the polarization state of 14b, IPS is 94%, is unsatisfactory for polarization requirements.Logical
Crossing the two polarization state difference, 14 square region can be adjusted by 31 polarization control unit, adjustment amount is 3%. warps
After crossing adjustment, polarization state is made to meet demand.
Compared with prior art, ultra-high numerical aperture disclosed in this invention is photo-etched into polarization compensation and controls device,
Object plane or image planes or image face are placed polarizing pupil compensating device simultaneously and imaging beam are carried out Polarization Modulation, can surpass by effective compensation
Polarization aberration in PO light path impact in high NA photolithographic imaging system, accurately controls polarization state, improves lithographic results, can be by the phase
Hope that polarized light intensity brings up to more than 97%, meet the polarization requirements of superelevation NA, it is achieved resolution and CDU demand.
The preferred embodiment of the simply present invention described in this specification, above example is only in order to illustrate the present invention
Technical scheme rather than limitation of the present invention.All those skilled in the art are under this invention's idea by logical analysis, reasoning
Or the available technical scheme of limited experiment, all should be within the scope of the present invention.
Claims (4)
1. the photoetching imaging polarized compensation device of ultra-high numerical aperture, it is characterised in that including:
One light source, for providing an illuminating bundle；
One lighting unit, for being adjusted to exposing light beam and irradiating a mask plate by described illuminating bundle；
One projection objective, for will transmit through the imaging beam imaging of described mask plate to a silicon chip；
One polarization compensation device, for exposing light beam described in Polarization Modulation or described imaging beam, described polarization compensation device position
Between described lighting unit and described mask plate or between described projection objective and described silicon chip；
Some square region that described polarization compensation device is made up of quartz base plate are constituted；
Define in described each square region described exposing light beam or described imaging beam are carried out X to or Y-direction or S to polarization
The electro-optic crystal of modulation, described each square region formed the variable X in a polarization direction to linear polarizer or Y-direction linear polarizer or
S is to linear polarizer.
2. polarization compensation device as claimed in claim 1, it is characterised in that described square region is by tiny array electrode device control
System, utilizes different voltage optical axis deflection angle differences to change to realize different polarization states.
3. the ultra-high numerical aperture using the photoetching imaging polarized compensation device of ultra-high numerical aperture as claimed in claim 1
Photoetching imaging polarized compensation method, it is characterised in that including:
Step one, detect the actual polarization state of each exposure field；
Step 2, according to actual polarization stateWith expectation polarization stateJudge whether to start exposure or compensating polarizing is adjusted
Whole amount, if<, then start exposure, if>, it is necessary to determine polariton unit N and needs are partially
Shake adjustment amount, enter step 3；
Step 3, according to each polariton unit need polarize adjustment amountCalculate the thing that each subelement needs to adjust
Reason amount；
Step 4, the physical quantity actual polarization state of compensation adjusted according to each subelement described needs.
4. the photoetching imaging polarized compensation method of ultra-high numerical aperture as claimed in claim 3, it is characterised in that described method is also
Including step 5, repeat step one to four until making described actual polarization state meet demand.
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| CN104049466B (en) * | 2013-03-11 | 2018-02-06 | 上海微电子装备（集团）股份有限公司 | The photoetching imaging polarized compensation device of ultra-high numerical aperture and method |
| CN106933043B (en) * | 2015-12-30 | 2019-11-22 | 上海微电子装备（集团）股份有限公司 | Photolithographic imaging system and its exposure method |
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| WO2005050325A1 (en) * | 2003-11-05 | 2005-06-02 | Carl Zeiss Smt Ag | Polarization-optimizing illumination system |
| CN1645258A (en) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | High numerical aperture photoetching imaging polarization control device |
| JP2006253327A (en) * | 2005-03-09 | 2006-09-21 | Nikon Corp | Illumination optical device, exposure device, adjustment method thereof, and manufacturing method of micro device |
| CN1910522A (en) * | 2004-01-16 | 2007-02-07 | 卡尔蔡司Smt股份公司 | Polarization-modulating optical element |
| JP2007180088A (en) * | 2005-12-27 | 2007-07-12 | Nikon Corp | Illumination optical apparatus and method of adjusting the same, exposure apparatus, and device manufacturing method |
| CN101201553A (en) * | 2002-12-03 | 2008-06-18 | 株式会社尼康 | Illumination optical system, exposure apparatus, and exposure method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102009055184B4 (en) * | 2009-12-22 | 2011-11-10 | Carl Zeiss Smt Gmbh | Optical system, in particular a microlithographic projection exposure apparatus |
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|---|---|---|---|---|
| TW368113U (en) * | 1998-06-29 | 1999-08-21 | Ind Tech Res Inst | Black-body emission cavity |
| CN101201553A (en) * | 2002-12-03 | 2008-06-18 | 株式会社尼康 | Illumination optical system, exposure apparatus, and exposure method |
| WO2005050325A1 (en) * | 2003-11-05 | 2005-06-02 | Carl Zeiss Smt Ag | Polarization-optimizing illumination system |
| CN1910522A (en) * | 2004-01-16 | 2007-02-07 | 卡尔蔡司Smt股份公司 | Polarization-modulating optical element |
| CN1645258A (en) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | High numerical aperture photoetching imaging polarization control device |
| JP2006253327A (en) * | 2005-03-09 | 2006-09-21 | Nikon Corp | Illumination optical device, exposure device, adjustment method thereof, and manufacturing method of micro device |
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