CN103869626A - Ultrahigh numerical aperture lithography imaging polarization compensation apparatus and method thereof - Google Patents
Ultrahigh numerical aperture lithography imaging polarization compensation apparatus and method thereof Download PDFInfo
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- CN103869626A CN103869626A CN201210528727.8A CN201210528727A CN103869626A CN 103869626 A CN103869626 A CN 103869626A CN 201210528727 A CN201210528727 A CN 201210528727A CN 103869626 A CN103869626 A CN 103869626A
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- 230000010287 polarization Effects 0.000 title claims abstract description 133
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- 238000001459 lithography Methods 0.000 title abstract description 3
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- 239000010703 silicon Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
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- 239000013078 crystal Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
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- 238000005286 illumination Methods 0.000 abstract description 18
- 238000010586 diagram Methods 0.000 description 11
- 230000004075 alteration Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 210000001747 pupil Anatomy 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
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- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000711 polarimetry Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 150000003376 silicon Chemical class 0.000 description 1
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Abstract
The invention discloses an ultrahigh numerical aperture lithography imaging polarization compensation apparatus. The apparatus comprises a light source used for providing an illumination light beam, an illumination unit used for adjusting the illumination light beam to an exposed light beam and irradiating a mask plate, a projection objective used for imaging an imaging light beam transmitting the mask plate to a silicon chip, and a polarization compensation device used for the polarization modulation of the exposed light beam or/and the imaging light beam, and positioned between the illumination unit and the mask plate or between the projection objective and the silicon chip.
Description
Technical field
The present invention relates to a kind of VLSI (very large scale integrated circuit) production equipment advanced scanning projecting photoetching machine optical patterning technical field, relate in particular to the photoetching imaging polarized compensation system of a kind of high-NA.
Background technology
Along with the development of projection lithography technology, the projection optical system performance of litho machine progressively improves, and litho machine has been successfully applied to the integrated circuit manufacture field of sub-micron and deep-submicron resolution at present.While manufacturing integrated circuit (IC) chip with photoetching machine, require projection objective to there is higher resolution, to realize the preparation of highly integrated chip.In order to meet the requirement to projected light object lens high-resolution, need to improve the image space numerical aperture (NA) of projection objective.But, adopt the projection objective of large-numerical aperture to cause polarized light to become obviously the impact of lithographic results, use different polarization state lights to expose to the lines of different directions, can improve greatly lithographic results.In order to describe the difference of actual polarization state and ideal expectation polarization state, introduce and expect polarized light intensity IPS(Intensity in Preferred State) concept.Expect that polarized light intensity (IPS) is to expect that the light intensity of polarization state accounts for the ratio of total light intensity.
In the immersion lithographic machine of ultra-high numerical aperture (NA) litho machine especially NA>1, the control of polarization is particularly important, is and controls IPS.In early stage high NA litho machine, what be concerned is the polarization impact of light source always, and the pupil polarization of mask and PO is not concerned.Along with improving constantly of submergence projection objective NA, the IPS that the control of polarization of illumination reaches is generally less than 95%, and the polarization demand IPS of superelevation NA requires to be greater than 97%, can not meet optical patterning demand.
Patent US2008/0074632A1 and patent US2009/0128796A1 have proposed polarization control technology in illumination path.In US2008/0074632 A1, FIG1 ~ FIG11 has described and has utilized polarization state switchgear to realize four kinds of conventional light illumination mode traditional lightings, ring illumination, the Polarization Control of quadrupole illuminating and secondary illumination; Patent US2009/0128796A1 in illumination path, places linear polariser and optically-active device is realized Polarization Control.These polarization control technology are all to guarantee that the polarization direction of throwing light on mask face is conducive to optical patterning most, and in actual PO light path because the impact of Fresnel effect, material birefringence and plated film also can change polarization state, the residual error accumulating value of Polarization aberration can not be ignored, and needs compensation and controls.Especially, plated film has all been carried out on the surface of projection objective optical element, and the plated film of most all adopts the film structure of multilayer film.All can there is change to a certain degree in light wave its polarization state in the time of the generation catadioptric of the interface of every skim, therefore, the refractive index information of not knowing each rete in the design phase, be that impossible to accurately calculate polarisation of light state be how along with the propagation of light beam changes in light path, can only in design process, estimate.These not predictable impacts need to be controlled with polarization compensation after the actual processing and manufacturing out of object lens.
Summary of the invention
The object of the present invention is to provide a kind of ultra-high numerical aperture to be photo-etched into polarization compensation control device, place polarizing pupil compensating device at object plane or image planes or image face simultaneously imaging beam is carried out to Polarization Modulation, object is to compensate the impact of the Polarization aberration in PO light path in superelevation NA optical patterning system, accurately control polarization state, improve lithographic results.
In order to realize foregoing invention object, the present invention discloses the photoetching imaging polarized compensation system of a kind of ultra-high numerical aperture, comprising: a light source, for an illuminating bundle is provided; One lighting unit, for being adjusted into this illuminating bundle exposing light beam and irradiating a mask plate; One projection objective, for by imaging beam imaging to silicon chip transmitted through this mask plate; One polarization compensation device, for this exposing light beam of Polarization Modulation, or/and this imaging beam, this polarization compensation device is between this lighting unit and this mask plate or between this projection objective and this silicon chip.
Further, some square region that this polarization compensation device is made up of quartz base plate form.In this each square region, formed this exposing light beam or/and this imaging beam carries out the electro-optic crystal of X to Polarization Modulation, this each square region forms the variable X in a polarization direction to linear polarizer.In this each square region, formed this exposing light beam or/and this imaging beam carries out the electro-optic crystal of Y-direction Polarization Modulation, this each square region forms the variable Y-direction linear polarizer in a polarization direction.In this each square region, formed this exposing light beam or/and this imaging beam carries out the electro-optic crystal of S to Polarization Modulation, this each square region forms the variable S in a polarization direction to linear polarizer.This square region, by the control of tiny array electrode device, is utilized different voltage optical axis deflection angle differences to realize different polarization states and is changed.
The present invention discloses the photoetching imaging polarized compensation method of a kind of ultra-high numerical aperture simultaneously, comprising: step 1, detect the actual polarization state of each exposure visual field
; Step 2, according to actual polarization state
with expectation polarization state
judge whether to start exposure or compensating polarizing adjustment amount; Step 3, need adjustment amount according to each polariton unit
calculate the physical quantity that each subelement need to be adjusted
; Step 4, the physical quantity that need to adjust according to this each subelement compensate actual polarization state.
Further, the method also comprises that step 5, repeating step one to four are until satisfy the demands this actual polarization state.
Compared with prior art, ultra-high numerical aperture disclosed in this invention is photo-etched into polarization compensation control device, place polarizing pupil compensating device at object plane or image planes or image face simultaneously imaging beam is carried out to Polarization Modulation, Polarization aberration impact in energy effective compensation superelevation NA optical patterning system in PO light path, accurately control polarization state, improve lithographic results, expectation polarized light intensity can be brought up to more than 97%, meet the polarization demand of superelevation NA, realize resolution and CDU demand.
Accompanying drawing explanation
Can be by following detailed Description Of The Invention and appended graphic being further understood about the advantages and spirit of the present invention.
Fig. 1 is the structural representation of the lithographic equipment of application polarization compensation device of the present invention;
Fig. 2 is different polarization states direction schematic diagram;
Fig. 3 is the polarimetry compensation of lithographic equipment and adjusts process flow diagram;
Fig. 4 is for realizing directions X polarization compensation device schematic diagram;
Fig. 5 is for realizing directions X polarization compensation effect schematic diagram;
Fig. 6 is for realizing Y-direction polarization compensation device schematic diagram;
Fig. 7 is for realizing Y-direction polarization compensation effect schematic diagram;
Fig. 8 is for realizing S polarization compensation device schematic diagram;
Fig. 9 is for realizing S polarization compensation effect schematic diagram.
Embodiment
Describe the photoetching imaging polarized compensation system of the ultra-high numerical aperture for lithographic equipment and the method for a kind of specific embodiment of the present invention in detail below in conjunction with accompanying drawing.But, the present invention should be understood as and be not limited to this embodiment described below, and technical concept of the present invention can be implemented with other known technologies or the combination of function other technologies identical with those known technologies.
In the following description, for clear structure of the present invention and the working method of showing, to be described by all multidirectional words, but should by 'fornt', 'back', " left side ", " right side ", " outward ", " interior ", " outwards ", " inwardly ", " on ", the Word Understanding such as D score is for convenience of term, and not should be understood to word of limitation.In addition, " directions X " is interpreted as the direction parallel with surface level, and " Y-direction " is interpreted as parallel with surface level and vertical with directions X direction, and " Z direction " is interpreted as vertical with surface level and vertical with directions X, Y-direction direction.
Fig. 1 is the lithographic equipment structural representation of the polarization compensation device applied of the present invention.As shown in fig. 1, lithographic equipment 100 comprises for light source 1, and illuminator 2 ~ 9 and mask M, projection objective PL and the silicon chip W of exposing light beam is provided.For superelevation NA optical patterning system, light source 1 is generally 193nmArF laser instrument or 248nmKrF laser instrument or other ultraviolet laser.From laser instrument 1 and the light coming is propagated along Z-direction, the cross section on XY face, for long fan-shaped hot spot, is transmitted to beam expander unit 2, and 2a and 2b are the lens of different curvature radius, make to export the fan-shaped hot spot of predetermined target on the light path XY cross section of light source after 2b.
3 is turnover catoptron, and light transfers to along Y-direction after 3 to be propagated.10 is optically-active device, and 20 is depolarized device.4 is diffraction element, and 5 and 7 are zoom optical unit, and 6 is diffraction optical element, 60 for realizing quadrupole illuminating diffraction optical element, 61 for realizing ring illumination diffraction optical element, and 62 for realizing X to two utmost point illumination diffraction optical elements, and 63 for realizing Y-direction two utmost point illumination diffraction optical elements.5,6 illumination profile that realize different light illumination modes and different correlation factors together with 7.8 is microlens array, realizes Uniform Illumination.9 is light-gathering optics, and Uniform Illumination imaging is put to mask face M place.
Projection optical system PL is positioned at the mask M below shown in Fig. 1, and its optical axis AX is parallel to Z-direction.Owing to adopting double telecentric structure and thering is predetermined scale down if 1/5 or 1/4 refraction type or refractive and reflective optical system are as projection optical system, so in the time of mask pattern on the exposing light beam illuminating mask M of emitted, the image that circuit mask pattern becomes to dwindle in the wafer W that is coated with photoresist through projection optical system PL.
As shown in fig. 1,11 is the polarization compensation device between illuminace component and mask, and 13 is the polarization compensation device between object lens and silicon chip, can be to imaging beam is carried out to Polarization Modulation.Compensation system is generally made up of the multiple polariton unit that can control.For compensating polarizing, also need device for testing polarization 21 for device for testing polarization, be positioned in projection objective image planes, can detect the polarization state of each visual field point.In Fig. 1,31 are the control module that each polariton unit is controlled, and generally comprise and survey sensor-based system, Labcard driver system and motor executive system.21 realize polarization compensation adjustment together with 31.
In the time of litho machine real work, the laser sending from light source 1, through illuminator 2 ~ 9 each elements, forms the Uniform Illumination of certain visual field on mask face.While exposure for different mask graphs, etching system can arrange different expectation polarization states.In the time of photo-etching machine exposal vertical bar figure, X need to be set to polarization state, as shown in Fig. 2-a.During as photo-etching machine exposal horizontal line figure, Y-direction polarization state need to be set, as shown in Fig. 2-b.Exposure during simultaneously by the lines of both direction, needs S polarization, the polarization state as shown in Fig. 2-c. and all require IPS to be greater than 97% at 45nm node.Different polarization states all needs the same compensation adjustment of polarization.
Fig. 4 is for realizing X to polarization compensation device scheme schematic diagram, and polarization compensation device 11 forms for a series of several square region 12 of making on quartz base plate 11b.As shown in Figure 4, in each square region, can also make the electro-optic crystal that imaging beam is carried out to Polarization Modulation; Each square region on polarizing pupil device forms linear polarizer, as can utilizing tiny array electrode device, 12 its polarization directions make 12 making alives, realize different polarization states according to different voltage optical axis deflection angle differences as shown in Figure 4 and change, to meet the Polarization aberration compensation demand of projection objective.
Fig. 6 is for realizing Y-direction polarization compensation device scheme schematic diagram, and polarization compensation device 13 forms for a series of several square region 14 of making on quartz base plate 13b.As shown in Figure 6, in each square region, can also make the electro-optic crystal that imaging beam is carried out to Polarization Modulation; Each square region on polarizing pupil device forms linear polarizer, as can utilizing tiny array electrode device, 14 its polarization directions make 14 making alives, realize different polarization states according to different voltage optical axis deflection angle differences as shown in Figure 6 and change, to meet the Polarization aberration compensation demand of projection objective.
Fig. 8 is for realizing S to polarization compensation device scheme schematic diagram, and polarization compensation device 15 forms for a series of several square region 16 of making on quartz base plate 15b.As shown in Figure 8, in each square region, can also make the electro-optic crystal that imaging beam is carried out to Polarization Modulation; Each square region on polarizing pupil device forms linear polarizer, as can utilizing tiny array electrode device, 16 its polarization directions make 14 making alives, realize different polarization states according to different voltage optical axis deflection angle differences as shown in Figure 8 and change, to meet the Polarization aberration compensation demand of projection objective.
As shown in Figure 3, the step of this polarization compensation method of adjustment is concrete polarization compensation method of adjustment:
S1: the actual polarization state that is first detected current each visual field by device for testing polarization 21
;
S2: while exposing figure different, system has corresponding with it expectation polarization state
, actual polarization state in control program
with the expectation polarization state of comparing
; If
<
, directly enter S5 and start exposure, if
>
, need to determine polariton unit N and need polarization adjustment amount
, enter S3;
S3: need adjustment amount according to each polariton unit
, control module calculates the physical quantity that each subelement need to be adjusted
; According to subelement adjustment amount
, drive and realize by the electric motor units of control system;
S4: after having adjusted, again detect polarization state, if the multiple first step to the five steps of discontented lumping weight satisfy the demands polarization state.
In the time there is the affecting of birefringence or plated film in projection objective, testing out actual polarization state is the polarization state shown in 14a in Fig. 7, can find out, the polarization state of 14a polarization state and 14b there are differences, and IPS is 94%, does not meet polarization demand.By these two polarization state differences, can 14 square region be adjusted by 31 Polarization Control unit, adjustment amount be 3%. through adjustment after, polarization state is satisfied the demands.
Compared with prior art, ultra-high numerical aperture disclosed in this invention is photo-etched into polarization compensation control device, place polarizing pupil compensating device at object plane or image planes or image face simultaneously imaging beam is carried out to Polarization Modulation, Polarization aberration impact in energy effective compensation superelevation NA optical patterning system in PO light path, accurately control polarization state, improve lithographic results, expectation polarized light intensity can be brought up to more than 97%, meet the polarization demand of superelevation NA, realize resolution and CDU demand.
Described in this instructions is preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (8)
1. the photoetching imaging polarized compensation system of ultra-high numerical aperture, is characterized in that, comprising:
One light source, for providing an illuminating bundle;
One lighting unit, for being adjusted into described illuminating bundle exposing light beam and irradiating a mask plate;
One projection objective, for by imaging beam imaging to silicon chip transmitted through described mask plate;
One polarization compensation device, for exposing light beam described in Polarization Modulation, or/and described imaging beam, described polarization compensation device is between described lighting unit and described mask plate or between described projection objective and described silicon chip.
2. polarization compensation device as claimed in claim 1, is characterized in that, some square region that described polarization compensation device is made up of quartz base plate form.
3. polarization compensation device as claimed in claim 2, it is characterized in that, in described each square region, formed described exposing light beam or/and described imaging beam carries out the electro-optic crystal of X to Polarization Modulation, described each square region forms the variable X in a polarization direction to linear polarizer.
4. polarization compensation device as claimed in claim 2, it is characterized in that, in described each square region, formed described exposing light beam or/and described imaging beam carries out the electro-optic crystal of Y-direction Polarization Modulation, described each square region forms the variable Y-direction linear polarizer in a polarization direction.
5. polarization compensation device as claimed in claim 2, it is characterized in that, in described each square region, formed described exposing light beam or/and described imaging beam carries out the electro-optic crystal of S to Polarization Modulation, described each square region forms the variable S in a polarization direction to linear polarizer.
6. polarization compensation device as claimed in claim 2, is characterized in that, described square region, by the control of tiny array electrode device, is utilized different voltage optical axis deflection angle differences to realize different polarization states and changed.
7. the photoetching imaging polarized compensation method of ultra-high numerical aperture, is characterized in that, comprising:
Step 1, detect the actual polarization state of each exposure visual field
;
Step 2, according to actual polarization state
with expectation polarization state
judge whether to start exposure or compensating polarizing adjustment amount;
Step 3, need adjustment amount according to each polariton unit
calculate the physical quantity that each subelement need to be adjusted
;
Step 4, the physical quantity that need to adjust according to described each subelement compensate actual polarization state.
8. the photoetching imaging polarized compensation method of ultra-high numerical aperture as claimed in claim 7, is characterized in that, described method also comprises that step 5, repeating step one to four are until satisfy the demands described actual polarization state.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049466A (en) * | 2013-03-11 | 2014-09-17 | 上海微电子装备有限公司 | Polarization compensative device and polarization compensative method for ultrahigh numerical aperture photolithographic imaging |
| CN106933043A (en) * | 2015-12-30 | 2017-07-07 | 上海微电子装备有限公司 | Photolithographic imaging system and its exposure method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005050325A1 (en) * | 2003-11-05 | 2005-06-02 | Carl Zeiss Smt Ag | Polarization-optimizing illumination system |
| CN1645258A (en) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | High numerical aperture photoetching imaging polarization control device |
| JP2006253327A (en) * | 2005-03-09 | 2006-09-21 | Nikon Corp | Illumination optical device, exposure device, adjustment method thereof, and manufacturing method of micro device |
| CN1910522A (en) * | 2004-01-16 | 2007-02-07 | 卡尔蔡司Smt股份公司 | Polarization-modulating optical element |
| JP2007180088A (en) * | 2005-12-27 | 2007-07-12 | Nikon Corp | Illumination optical apparatus and method of adjusting the same, exposure apparatus, and device manufacturing method |
| CN101201553A (en) * | 2002-12-03 | 2008-06-18 | 株式会社尼康 | Illumination optical system, exposure apparatus, and exposure method |
| TWI368113B (en) * | 2009-12-22 | 2012-07-11 | Zeiss Carl Smt Gmbh | Optical system, in particular of a microlithographic projection exposure apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW368113U (en) * | 1998-06-29 | 1999-08-21 | Ind Tech Res Inst | Black-body emission cavity |
-
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- 2012-12-11 CN CN201210528727.8A patent/CN103869626B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101201553A (en) * | 2002-12-03 | 2008-06-18 | 株式会社尼康 | Illumination optical system, exposure apparatus, and exposure method |
| WO2005050325A1 (en) * | 2003-11-05 | 2005-06-02 | Carl Zeiss Smt Ag | Polarization-optimizing illumination system |
| CN1910522A (en) * | 2004-01-16 | 2007-02-07 | 卡尔蔡司Smt股份公司 | Polarization-modulating optical element |
| CN1645258A (en) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | High numerical aperture photoetching imaging polarization control device |
| JP2006253327A (en) * | 2005-03-09 | 2006-09-21 | Nikon Corp | Illumination optical device, exposure device, adjustment method thereof, and manufacturing method of micro device |
| JP2007180088A (en) * | 2005-12-27 | 2007-07-12 | Nikon Corp | Illumination optical apparatus and method of adjusting the same, exposure apparatus, and device manufacturing method |
| TWI368113B (en) * | 2009-12-22 | 2012-07-11 | Zeiss Carl Smt Gmbh | Optical system, in particular of a microlithographic projection exposure apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049466A (en) * | 2013-03-11 | 2014-09-17 | 上海微电子装备有限公司 | Polarization compensative device and polarization compensative method for ultrahigh numerical aperture photolithographic imaging |
| CN106933043A (en) * | 2015-12-30 | 2017-07-07 | 上海微电子装备有限公司 | Photolithographic imaging system and its exposure method |
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