CN103866282B - Pecvd device - Google Patents
Pecvd device Download PDFInfo
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- CN103866282B CN103866282B CN201210543858.3A CN201210543858A CN103866282B CN 103866282 B CN103866282 B CN 103866282B CN 201210543858 A CN201210543858 A CN 201210543858A CN 103866282 B CN103866282 B CN 103866282B
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 37
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Abstract
The present invention proposes a kind of PECVD device, including: cavity, wafer carrier, multiple radio-frequency electrodes, transmitting device and lowering or hoisting gear.Specifically, described cavity is provided with air inlet and gas outlet, and described cavity is provided with the first transmission mouth and the second transmission mouth；Described wafer carrier includes being spaced the multiple support plates arranged and vertically place along the longitudinal direction, and described wafer carrier may move in described reaction chamber the most between an upper and a lower position；The plurality of radio-frequency electrode is located at the top of described reaction chamber and is perpendicular to end face placement, the plurality of radio-frequency electrode is spaced layout along the longitudinal direction, and the plurality of radio-frequency electrode is respectively correspondingly inserted between adjacent support plate when described wafer carrier is at the upper position of described reaction chamber.According to the PECVD device of the present invention, increase the production capacity of equipment, and reduce the floor space of equipment, reduce difficulty and the cost of apparatus processing, weaken the standing wave effect in radio-frequency electrode, improve the surface quality of film.
Description
Technical field
The present invention relates to technical field of plasma, especially relate to a kind of PECVD(plasma enhanced chemical vapor deposition)
Equipment.
Background technology
Along with the development of plasma (Plasma) technology, plasma device has been widely used in manufacture collection
Become in the manufacturing process of circuit (IC) or photovoltaic (PV) product, simultaneously because parallel plate capacitor coupled plasma
(Capacitively Coupled Plasma is called for short CCP) principle of device electric discharge is simple, returns relative to ECR(electronics
Rotation Resonance Plasma), ICP(inductively coupled plasma) plasma that produces is more uniform, so, at present at PV
Industry waits until be widely applied.
The plate type PECVD apparatus used in photovoltaic crystal silicon manufacture course of products is broadly divided into directly according to the difference of thin film-forming method
Method and indirect method two kinds.Direct method and indirect method are respectively arranged with pluses and minuses.Direct method film forming is fine and close, it is possible to achieve surface passivation and body
Passivation, is conducive to improving minority carrier life time, so short circuit current is the highest.But direct method is for support plate ground connection, all adopts
By the mode of upwards plated film, film formation surface upward, the granule produced in technical process, or upper electrode stripping after long-play
The granule fallen can drop on film formation surface, affects outward appearance and the quality of cell piece.Indirect method mostly is lower plated film mode, plated film
Time silicon chip be placed on chamber roof, plasma source is below, and down, this equipment dependability, maintainability are good for film forming face, becomes
Film is uniform, and production capacity is high, but owing to surface passivation can only be realized, so limiting the further lifting of short circuit current.
Fig. 6 is plated film PECVD device schematic diagram on flat direct method conventional during current crystal silicon solar batteries produces, instead
Answering inside, chamber 61 to be typically in vacuum state, process gas enters inside reaction chamber by the air inlet 601 on top crown 62,
And controlled under a certain pressure by 602 chamber interior of vacuometer 63 and air vent, radio-frequency power supply 64 is by top crown 62
To reaction chamber internal offer energy, bottom crown 65 can be directly grounded as the carrier of wafer 66, it is possible to separately connects radio-frequency power supply
(not shown), produces rf electric field between two pole plates, process gas is excited into plasma, thus to placement
Wafer 66 etc. on bottom crown processes, and reacted gas discharges reaction chamber 61 by air vent 602.
But, it has following defects that
First, the granule produced in technical process, or after long-play, the granule of upper electrode peeling can drop to film forming table
On face, affect outward appearance and the quality of cell piece；
Secondly, in order to obtain bigger production capacity, the support plate area in this kind of mode is relatively big, typically can place tens and even go up
Hundred solar battery sheets, therefore occupation area of equipment is relatively big, difficult in maintenance；
3rd, in order to obtain bigger production capacity, the size of equipment constantly increases, the upper bottom crown of the CCP device shown in Fig. 6
Size the most constantly increases, and this adds increased the standing wave effect on pole plate, will cause in the middle of pole plate and the gas at edge simultaneously
Stream uniformity is deteriorated, and these all will produce deleterious effect to process results.Additionally, equipment and the increase of accessory size, increase
The cost of raw material added and processing cost and difficulty.
Summary of the invention
It is contemplated that solve one of above-mentioned technical problem the most to a certain extent or provide at a kind of useful business choosing
Select.To this end, it is an object of the present invention to propose one, floor space is little, production cost is low and improves wafer surface quality
PECVD device.
PECVD device according to embodiments of the present invention, including: cavity, wafer carrier, multiple radio-frequency electrodes, transmitting device
And lowering or hoisting gear.Specifically, having reaction chamber in described cavity, described cavity is provided with air inlet and gas outlet, described
The left side wall of cavity is provided with the first transmission mouth and right side wall is provided with the second transmission mouth relative with described first transmission mouth；Described
Wafer carrier includes being spaced the multiple support plates arranged and vertically place along the longitudinal direction, and described wafer carrier is in described reaction chamber
May move the most between an upper and a lower position；The plurality of radio-frequency electrode is located at the top of described reaction chamber and hangs down
Directly placing in end face, the plurality of radio-frequency electrode is spaced layout along the longitudinal direction, and is positioned at described top at described wafer carrier
During position, the plurality of radio-frequency electrode is respectively correspondingly inserted between adjacent support plate so that process gas is in described support plate and phase
It is provoked into plasma between adjacent radio-frequency electrode；Described transmitting device is located at the bottom of described reaction chamber, for by institute
State the first and second transmission mouths and described wafer carrier is transferred into and out described reaction chamber；Described lowering or hoisting gear is connected to ground, and uses
In lifting described wafer carrier in described reaction chamber.
PECVD device according to embodiments of the present invention, vertically places for placing multiple support plates of wafer, and by multiple support plates
And multiple radio-frequency electrodes interval is arranged, for the wafer on multiple support plates is carried out plated film.Not only increase single process to process
Number of wafers, add the production capacity of equipment, and reduce the floor space of equipment, and can effectively control radio-frequency electrode
Area, reduce difficulty and the cost of apparatus processing, and weaken the standing wave effect in radio-frequency electrode, so that being coated on wafer
The film on surface obtains preferable surface quality.Additionally, when the film layer that radio-frequency electrode or wafer carrier are piled up reaches certain thickness,
The film layer piled up can be come off by radio-frequency electrode or wafer carrier, owing to support plate and radio-frequency electrode are all vertically arranged, can avoid
The film layer come off drops in the coated surface of wafer, improves the surface quality of film further.
Additionally, according to one embodiment of present invention, described wafer carrier also includes the first and second connectors and multiple points
Spacer block, the two ends of each described support plate are connected with described first and second connectors respectively and the plurality of spacing block is respectively provided at
Between adjacent described support plate.Thus, not only increase the plated film efficiency of device, and improve the surface quality of film.Brilliant
The simple in construction of sheet bracket, it is simple to the installation of wafer carrier.
In one particular embodiment of the present invention, at least one side of described support plate is provided with fixing for fixed wafer
Part, described fixture is fixed block, and described fixed block is provided with inclined plane part in the face of the surface of described support plate, described inclined plane part with
The surface of described support plate limits wafer orientation groove.Thus, make stable being located on support plate of wafer, and be easy to wafer and leave in
Take off the time of wafer on support plate and from support plate, improve the work efficiency of equipment, simple in construction, reduce the cost of equipment.
Additionally, according to some examples of the present invention, described transmitting device includes multiple rotating shaft, and each described rotating shaft is along front and back
Described reaction chamber is extended to the two ends of extension and each described rotating shaft, close by sealing member between described rotating shaft and described cavity
Envelope.Thus, simple in construction, transferring wafer bracket that can be stable, and improve the sealing property of reaction chamber, improve PECVD
The service behaviour of equipment.
Advantageously, in a concrete example of the present invention, described sealing member is magnetic fluid seal.Thus, improve instead
Answer the sealing effectiveness in chamber and the service life of sealing member.
Additionally, according to some specific embodiments of the present invention, described air inlet includes the first and second air inlets, described in give vent to anger
Mouth include the first and second gas outlets, described first and second air inlets be respectively provided at the top cover of described cavity two ends, left and right and
Described first and second gas outlets are respectively provided at the two ends, left and right of the bottom of described cavity, and described first and second air inlets with
And described first and second gas outlets are corresponding with the gap of adjacent described support plate.Thus, it is possible to make the first air inlet and the 4th go out
QI KOU forms one group and the second air inlet and form a group with gas outlet and carry out alternation, improves the process gas in reaction chamber
The uniformity of body, improves the surface quality of wafer surface film layer.
Further, according to one embodiment of present invention, the clamping dress for clamping and releasing described lowering or hoisting gear is also included
Put.Thus, make wafer carrier positioning stablity, improve the stability of PECVD device.
Advantageously, according to one embodiment of present invention, described lowering or hoisting gear includes that elevating lever, described elevating lever vertically set
Put and the two ends of described elevating lever are stretched out from the upper cover of described reaction chamber and bottom respectively.
Additionally, according to one embodiment of present invention, described clamping device includes the upper clamping being located on the outer end face of described cavity
Mechanism and the lower clamp system being located on described cavity outer bottom, described upper clamping mechanism and described lower clamp system are respectively used to
Clamp and release the top and bottom of described elevating lever.
Further, according to one embodiment of present invention, described clamp system is bellows structure.
The additional aspect of the present invention and advantage will part be given in the following description, and part will become bright from the following description
Aobvious, or recognized by the practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage will be apparent from from combining the accompanying drawings below description to embodiment
With easy to understand, wherein:
Fig. 1 is the schematic diagram of the PECVD device of one embodiment of the present of invention；
Fig. 2 is the schematic diagram of the wafer carrier of the PECVD device of one embodiment of the present of invention；
Fig. 3 is the generalized section of the PECVD device of one embodiment of the present of invention；
Fig. 4 is the generalized section of the PECVD device of another embodiment of the present invention；
Fig. 5 is the schematic diagram of the support plate of the PECVD device of another embodiment of the present invention；
Fig. 5 a is the generalized section in A-A direction in Fig. 5；
Fig. 6 is the schematic diagram of the support plate of PECVD device of the prior art.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, the most identical
Or similar label represents same or similar element or has the element of same or like function.Retouch below with reference to accompanying drawing
The embodiment stated is exemplary, it is intended to is used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it is to be understood that term " " center ", " longitudinally ", " laterally ", " length ", " width ",
" thickness ", " on ", D score, "front", "rear", "left", "right", " vertically ", " level ", " top ", " end " " interior ",
Orientation or the position relationship of the instruction such as " outward ", " clockwise ", " counterclockwise " are based on orientation shown in the drawings or position relationship,
It is for only for ease of the description present invention and simplifies description rather than instruction or imply that the device of indication or element must have specific
Orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed
Or implicitly include one or more this feature.In describing the invention, " multiple " are meant that two or two
Above, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, term " install ", " being connected ", " connection ", " fixing "
Should be interpreted broadly Deng term, connect for example, it may be fixing, it is also possible to be to removably connect, or be integrally connected；Can
To be mechanical connection, it is also possible to be electrical connection；Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, permissible
It it is the connection of two element internals.For the ordinary skill in the art, above-mentioned art can be understood as the case may be
Language concrete meaning in the present invention.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score
Can include that the first and second features directly contact, it is also possible to include that the first and second features are not directly contact but by it
Other characterisation contact between.And, fisrt feature second feature " on ", " top " and " above " include
Fisrt feature is directly over second feature and oblique upper, or is merely representative of fisrt feature level height higher than second feature.First
Feature second feature " under ", " lower section " and " below " include fisrt feature immediately below second feature and obliquely downward,
Or it is merely representative of fisrt feature level height less than second feature.
Describe PECVD device 100 according to embodiments of the present invention with reference to the accompanying drawings in detail.
As shown in Figure 1, Figure 2 and Figure 3, PECVD device 100 according to embodiments of the present invention, including: cavity 110, brilliant
Sheet bracket 120, multiple radio-frequency electrodes 130, transmitting device 140 and lowering or hoisting gear 150.
Specifically, having reaction chamber in cavity 110, cavity 110 is provided with air inlet 111 and gas outlet (in Fig. 1 not
Illustrate, see Fig. 3), for being passed through process gas from air inlet 111 in the reaction chamber of cavity 110, and arranged by gas outlet
Go out the process gas in the reaction chamber of cavity 110.As shown in Fig. 1 or Fig. 3, the left side of cavity 110 (the most as shown in Figure 3 to
Left direction) sidewall is provided with the first transmission mouth 113, on the right side (direction the most to the right) sidewall of cavity 110
It is provided with the second transmission mouth 114 relative with the first transmission mouth 113, for incoming wafer carrier in the reaction chamber of cavity 110
120, and in the reaction chamber of cavity 110, spread out of wafer carrier 120.Wafer carrier 120 includes multiple support plate 121, each
Support plate 121 vertical (i.e. such as the direction vertically of Fig. 1 or Fig. 2) is placed in the reaction chamber of cavity 110, and multiple load
Plate 121 (direction before and after the most as shown in Figure 2) along the longitudinal direction interval is arranged, wafer carrier 120 is anti-cavity 110
Answering intracavity to may move the most between an upper and a lower position, wherein, upper position is that wafer carrier 120 is positioned at chamber
The position on the top of the reaction chamber of body 110, namely carries out plated film position to the wafer on wafer carrier；Lower position is brilliant
Sheet bracket 120 is positioned at the position of the bottom of the reaction chamber of cavity 110, and namely wafer carrier is positioned on transmitting device 140
Position.Multiple radio-frequency electrodes 130 are located at the top (top the most as shown in Figure 1) of the reaction chamber of cavity 110, wherein, often
Individual radio-frequency electrode 130 is perpendicular to the end face of the reaction chamber of cavity 110 and places, and in other words, each radio-frequency electrode 130 vertically sets
Put the end face of reaction chamber at cavity 110, multiple radio-frequency electrodes 130 (direction before and after the most as shown in Figure 1) along the longitudinal direction
Interval is arranged, when the upper position of the reaction chamber that wafer carrier 120 is positioned at cavity 110, multiple radio-frequency electrodes 130 are respectively
Be inserted correspondingly between adjacent support plate 121 so that process gas multipair support plate 121 and adjacent radio-frequency electrode 130 it
Between be provoked into plasma.Transmitting device 140 is located at the bottom of the reaction chamber of cavity 110, anti-at cavity 110
Intracavity is answered to transport wafer carrier 120.Lowering or hoisting gear 150, for lifting wafer carrier 120 in the reaction chamber of cavity 110, makes
Wafer carrier 120 is positioned at upper position or is positioned on transmitting device 140.Lowering or hoisting gear 150 is connected to the ground, at wafer
Stable voltage difference is formed between bracket 120 and radio-frequency electrode 130.
PECVD device according to embodiments of the present invention, vertically places for placing multiple support plates 121 of wafer, and by multiple
Support plate 121 and multiple radio-frequency electrode 130 interval are arranged, for the wafer on multiple support plates 121 is carried out plated film.Not only increase
Add the number of wafers that single process processes, added the production capacity of equipment, and reduce the floor space of equipment, and can have
The area of the control radio-frequency electrode 130 of effect, reduces difficulty and the cost of apparatus processing, and weakens in radio-frequency electrode 130
Standing wave effect, so that the film being coated on wafer surface obtains preferable surface quality.Additionally, at radio-frequency electrode 130 or wafer
When the film layer that bracket 120 is piled up reaches certain thickness, the film layer of accumulation can be by de-in radio-frequency electrode 130 or wafer carrier 120
Fall, owing to support plate 121 and radio-frequency electrode 130 are all vertically arranged, the film layer come off can be avoided to drop in the plated film table of wafer
Face, improves the surface quality of film further.
As it is shown in figure 1, in one particular embodiment of the present invention, cavity 110 includes that top has box body and the top of opening
Lid, is provided with sealing device between top cover and box body, the vacuum for the reaction chamber of chamber 110 seals, and sealing device is permissible
Being the existing sealing devices such as O RunddichtringO, top cover and box body fit in the reaction chamber of sealing.Multiple radio-frequency electrodes 130 set
At the lower surface of top board, and electrical isolation between multiple radio-frequency electrode 130.Top board is provided with and is connected with radio-frequency electrode 130
Multiple radio frequency connection devices, radio-frequency power supply is connected with multiple radio-frequency electrodes by radio frequency connection device, specifically, can be by single
All of radio-frequency electrode 130 is connected by one radio-frequency power supply, it is possible to multiple radio-frequency electrodes 130 be grouped, the radio frequency electrical of same group
Pole 130 shares a radio-frequency power supply.Radio frequency connection device is possible not only to connect radio-frequency power supply with radio-frequency electrode 130.Additionally,
Radio frequency connection device also has the isolation parts made of insulant such as pottery, with realize radio-frequency electrode 130 and top cover electric every
From.It is provided with transmitting device 140, for wafer carrier being passed through the first of cavity 110 in the bottom of the reaction chamber of cavity 110
In the reaction chamber of the transmission incoming cavity of mouth 113 110, and spread out of by the second transmission mouth 113 in the reaction chamber of cavity 110
Wafer carrier 120.
Additionally, the PECVD device 100 of the present invention also has miscellaneous part, prior art can the known present invention not entered
Row describes in detail.
Fig. 2 is the schematic diagram of the wafer carrier 120 of the PECVD device 100 of one embodiment of the present of invention, with reference to Fig. 2, brilliant
Sheet bracket 120 also includes the first connector 122 and the second connector 123 and multiple spacing block 124.First connector 122
Be oppositely arranged with the second connector 123, the two ends of each support plate 121 respectively with the first connector 122 and the second connector 123
Being connected, multiple spacing blocks 124 are respectively provided between adjacent support plate 121.Specifically, the left end of each support plate 121 with
First connector 122 is connected, and the right-hand member of each support plate 121 and the second connector 123 are connected.Two the most adjacent support plates
The left end of 121 uses the spacing block 124 being positioned on the first connector 122 spaced apart, and the most adjacent two support plates 121
Right-hand member uses the spacing block 124 being positioned on the second connector 123 spaced apart, is used for making interval between two support plates 121 predetermined
Distance, is conducive to controlling the spacing between support plate 121, it is simple to the wafer on multiple support plates 121 is carried out plated film.Wherein,
First connector the 122, second connector 123 and spacing block 124 are led by aluminium alloy, graphite or graphite composite material etc.
Electric material is made.Thus, not only increase the plated film efficiency of device, and improve the surface quality of film.Wafer carrier 120
Simple in construction, it is simple to the installation of wafer carrier 120.
When PECVD device 100 works, at least one side of support plate 121 is placed wafer, for wafer surface
Carry out plated film.Therefore, at least one side of support plate 121 is provided with fixture for fixed wafer.In other words, support plate 121
Above a side of radio-frequency electrode 130 is provided with fixture for fixed wafer.Specifically, fixture is fixed block
1211.Preferably, as it is shown in figure 5, fixed block 1211 is four, two of which fixed block 1211 is used for positioning wafer 20
Following, two other fixed block 1211 positions the left side and the right of wafer 20 respectively, and wafer 20 following two in location are solid
Determine block 1211 and be respectively adjacent to the left side and the right setting, wafer 20 left side, location and the fixed block 1211 points on the right of wafer 20
The following setting of other adjacent wafer 20.Additionally, fixed block 1211 is provided with inclined plane part in the face of the surface of support plate 121, fixing
The inclined plane part of block 1211 limits wafer orientation groove with the surface of support plate 121, and wafer 20 is positioned in wafer orientation groove.Tool
Body ground, limits opening upwards for positioning the surface engagement of two following fixed blocks of wafer 20 1211 and support plate 121
Locating slot, the surface engagement of fixed block 1211 with support plate 121 for positioning the left side of wafer 20 limits opening to the right
Locating slot, the surface engagement of fixed block 1211 with support plate 121 for positioning the right of wafer 20 limits opening to the left
Locating slot.This keeper can stably position wafer, and is easy to take out wafer 20, reduces wafer 20 and leaves support plate 121 in
Above and take off the time of wafer 20 from support plate 121, improve the work efficiency of equipment.Additionally, the structure letter of this keeper
Single, it is simple to the production of support plate 121, reduce the cost of equipment.
It is used for placing on support plate 121 to arrange multiple keeper on a side of wafer 20, for making the one of support plate 121
Multiple wafer can be placed on individual side.
Install wafer time, wafer is inserted from top to bottom in the locating slot of fixed block 1211, make wafer stable be positioned at support plate
On 121, after wafer surface has processed, only need upwardly wafer can take off away from the locating slot of fixed block 1211
Wafer.
Additionally, in other embodiments of the present invention, fixture includes six fixed blocks 1211, wherein, wafer following,
The left side and the right are respectively adopted two fixed blocks 1211 and position.Quantity and the distribution of fixed block 1211 have various ways, on
The description stating the quantity to fixed block 1211 and distribution form is only some concrete examples of the present invention, the not limit to the present invention
System.
Certainly, the fixture of the present invention can also use other keepers of prior art, such as, be formed on support plate 121
Buckle structure etc..
As shown in Fig. 1, Fig. 3 or Fig. 4, in some embodiments of the invention, transmitting device 140 includes multiple rotating shaft 141,
Multiple rotating shafts 141 (left and right directions the most as described in Figure 1) in left-right direction interval is arranged under the receiving chamber of cavity 110
Portion, the most each rotating shaft 141 (direction before and after the most as described in Figure 1) along the longitudinal direction extends.The two of each rotating shaft 141
End extends the reaction chamber of cavity 110, and wherein, the front table of the reaction chamber of cavity 110 is extended in the front end of each rotating shaft 141
Face, and the rear surface of reaction chamber of cavity 110 is extended in the rear end of each rotating shaft 141.Wafer carrier 120 is placed on many
In individual rotating shaft 141, wafer carrier 120 can be delivered to precalculated position by rotating shaft 141, and simple in construction is easy to operate,
Quickly wafer carrier 120 precalculated position be can be positioned at, service behaviour and the work efficiency of equipment improve.Additionally, turn
Sealed by sealing member 142 between axle 141 and cavity 110, it is to avoid air is entered cavity 110 by rotating shaft 141 and cavity 110
Reaction chamber.
Due to when magnetic fluid seal works without abrasion and there is longer service life, the sealing member 142 of the present invention uses magnetic
Fluid seal, makes, in rotating shaft 141 rotary course, to be effectively sealed the reaction chamber of cavity 110, improve reaction
The sealing property in chamber, the film making wafer surface be coated with has higher surface quality.
In addition the sealing member 142 of the present invention can also be outside framework oil seal etc., existing sealing device in prior art, at this not
It is described in detail.
As it is shown on figure 3, in an example of the present invention, lowering or hoisting gear 150 includes elevating lever, elevating lever is vertically (i.e.
Above-below direction as shown in Figure 1) arrange, the two ends of elevating lever are stretched out from the upper cover of the reaction chamber of cavity 110 and bottom respectively.
Elevating lever can drive wafer carrier 120 vertically moving, makes wafer carrier 120 be positioned at reaction chamber upper of cavity 110
Portion or be positioned on transmitting device 140.Preferably, elevating lever includes elevating lever 151a and lower elevating lever 151b, at wafer
When bracket 120 is delivered to precalculated position by transmitting device 140, lower elevating lever 151b upwardly wafer carrier 120 upwards moves
Move, and wafer carrier 120 is pushed to the top of the reaction chamber of cavity 110, make the multiple support plates 121 on wafer carrier 120
And multiple radio-frequency electrodes 130 interval is arranged, now, upper elevating lever 151a moves down and clamped wafer bracket 120, thus
Making wafer carrier 120 and lowering or hoisting gear 150 compact siro spinning technology, lowering or hoisting gear 150 is connected to ground simultaneously, can pass through this simultaneously
Stable for wafer carrier 120 is positioned at predetermined plated film position by device, it is simple to the wafer on support plate 121 is carried out plated film,
Ensure repeatedly the concordance of technique.Additionally, this lowering or hoisting gear 150 simple in construction, it is simple to produce and assemble.
Further, shown in Fig. 3 and Fig. 4, PECVD device 100 also includes for clamping and releasing lowering or hoisting gear 150
Clamping device 160.When wafer carrier 120 is pushed to precalculated position by lowering or hoisting gear 150, clamping device 160 clamps
Elevating lever；After wafer plated film completes, unclamp clamping device 160, make the wafer carrier 120 that plated film can be completed by elevating lever
It is placed on transmitting device 140.Thus, further increasing the stability of elevating lever,
Advantageously, clamping device 160 includes the upper clamping mechanism 161 being located on the outer end face of cavity 110 and is located at cavity 110
Lower clamp system 162 on outer bottom, upper clamping mechanism 161 and lower clamp system 162 are respectively used to clamp and release lifting
The top and bottom of bar.In other words, upper clamping mechanism 161 is used for clamping and releasing elevating lever 151a, lower clamp system 162
For clamping and releasing lower elevating lever 151b,
Preferably, clamp system is bellows structure.Specifically, upper clamping mechanism 161 and lower clamp system 162 are ripple
Stricture of vagina tubular construction.The vacuum being possible not only to realize the reaction chamber of cavity 110 seals, it is also possible to carry out stretching motion.
Additionally, as it is shown on figure 3, according to some specific embodiments of the present invention, air inlet 111 includes the first air inlet 111a
With the second air inlet 111b, gas outlet includes the first gas outlet 112a and the second gas outlet 112b.First air inlet 111a and
Second air inlet 111b is respectively provided at the two ends, left and right of the top cover of cavity 110, the first gas outlet 112a and the second gas outlet 112b
It is respectively provided at the two ends, left and right of the bottom of cavity 110.First air inlet 111a and the second air inlet 111b and first gives vent to anger
Mouthful 112a and the second gas outlet 112b includes multiple respectively, the gap pair of multiple air inlets and gas outlet and adjacent support plate 121
Should.In other words, the first air inlet 111a and the second gas outlet 112b includes multiple respectively, each first air inlet 111a and
The connecting line of the second corresponding gas outlet 112b is between two adjacent support plates 121；Second air inlet 111b and
One gas outlet 112a includes multiple respectively, each second air inlet 111b and the connecting line position of the first corresponding gas outlet a
Between two adjacent support plates 121.Thus, make to be full of between support plate 121 process gas, improve the anti-of cavity 110
The uniformity answering the process gas of intracavity to be distributed, improves the surface quality of wafer surface film layer.
When PECVD device 100 works, the first air inlet 111a and the second gas outlet 112b is one group and opens simultaneously, or
Person the second air inlet 111b and the first gas outlet 112a is one group and opens simultaneously.Wherein, the first air inlet 111a and second goes out
When QI KOU 112b is opened simultaneously, process gas is passed through in the reaction chamber of cavity 110 by the first air inlet 111a, and through too much
Behind gap between individual support plate 121, the second gas outlet 112b discharge the reaction chamber of cavity 110；Second air inlet 111b
When opening with the first gas outlet 112a, process gas is passed through in the reaction chamber of cavity 110 by the second air inlet 111b simultaneously,
And behind the gap between multiple support plates 121, the first gas outlet 112a discharge the reaction chamber of cavity 110.
The work process of the PECVD device 100 of one specific embodiment of the present invention is the most simply described.
As it is shown on figure 3, wafer carrier 120 is driven by transmitting device 140, via the first transmission incoming cavity of mouth 113 110
Reaction chamber in, arrive behind precalculated position, the lower elevating lever 151b of the lowering or hoisting gear 150 installed bottom cavity 110 upwards moves
Dynamic, wafer carrier 120 is supported to operating position.Now, multiple support plates 121 are spaced with multiple radio-frequency electrodes 130
Arrange.It is arranged on the upper elevating lever 151a at cavity 110 top to move down and clamp with the mating reaction of lower elevating lever 151b
Wafer carrier 120.The upper elevating lever 151a of upper clamping mechanism 161 clamping, and the lower elevating lever 151b of lower clamp system 162 clamping.
And the wafer starting to be opposite on wafer carrier 120 carries out plated film.
In coating process, first the first air inlet 111a and the second gas outlet 112b is opened, and the second air inlet 111b and
First gas outlet 112a closes, and makes process gas be passed through reaction chamber by the first air inlet 111a, and by the second gas outlet 112b
Discharge reaction chamber；After the scheduled time, the second air inlet 111b and the first gas outlet 112a is opened, and the first air inlet
Mouth 111a and the second gas outlet 112b closes, and makes process gas be passed through reaction chamber by the second air inlet 111b, and is gone out by first
QI KOU 112a discharges reaction chamber.By above-mentioned steps alternately, it is used for making wafer surface plated film uniform.
After plated film completes, upper clamping mechanism 161 unclamps elevating lever 151a and lower clamp system 162 unclamps lower elevating lever 151b.
Upper elevating lever 151a moves up and unclamps wafer carrier 120, and lower elevating lever 151b moves down and placed by wafer carrier 120
On transmitting device 140, transmitting device 140 wafer carrier 120 completed by plated film spreads out of the reaction chamber of cavity 110.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
Example " or the description of " some examples " etc. means to combine this embodiment or example describes specific features, structure, material or
Feature is contained at least one embodiment or the example of the present invention.In this manual, the schematic representation to above-mentioned term
It is not necessarily referring to identical embodiment or example.And, the specific features of description, structure, material or feature can be
Any one or more embodiments or example combine in an appropriate manner.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is exemplary,
Being not considered as limiting the invention, those of ordinary skill in the art is without departing from the principle of the present invention and the situation of objective
Under above-described embodiment can be changed within the scope of the invention, revise, replace and modification.
Claims (10)
1. a PECVD device, it is characterised in that including:
Cavity, has reaction chamber in described cavity, described cavity is provided with air inlet and gas outlet, the left side wall of described cavity
It is provided with the first transmission mouth and right side wall is provided with the second transmission mouth relative with described first transmission mouth；
Wafer carrier, described wafer carrier includes being spaced the multiple support plates arranged and vertically place, described wafer along the longitudinal direction
Bracket may move in described reaction chamber the most between an upper and a lower position；
Multiple radio-frequency electrodes, the plurality of radio-frequency electrode is located at the top of described reaction chamber and is perpendicular to end face placement, described many
Individual radio-frequency electrode is spaced layout, and the plurality of radio frequency electrical when described wafer carrier is positioned at described upper position along the longitudinal direction
Pole is respectively correspondingly inserted between adjacent support plate so that process gas is swashed between described support plate and adjacent radio-frequency electrode
Send out into plasma；
Transmitting device, described transmitting device is located at the bottom of described reaction chamber, will for transmitting mouths by described first and second
Described wafer carrier is transferred into and out described reaction chamber；With
Lowering or hoisting gear, described lowering or hoisting gear is connected to ground, and described lowering or hoisting gear is for lifting described wafer in described reaction chamber
Bracket.
PECVD device the most according to claim 1, it is characterised in that described wafer carrier also includes first and second
Connector and multiple spacing block, the two ends of each described support plate are connected and described many with described first and second connectors respectively
Individual spacing block is respectively provided between adjacent described support plate.
PECVD device the most according to claim 1, it is characterised in that at least one side of described support plate is provided with
For the fixture of fixed wafer, described fixture is fixed block, and described fixed block is provided with tiltedly in the face of the surface of described support plate
Face, described inclined plane part limits wafer orientation groove with the surface of described support plate.
PECVD device the most according to claim 1, it is characterised in that described transmitting device includes multiple rotating shaft, often
Individual described rotating shaft extends along the longitudinal direction and described reaction chamber, described rotating shaft and described chamber are extended in the two ends of each described rotating shaft
Sealed by sealing member between body.
PECVD device the most according to claim 4, it is characterised in that described sealing member is magnetic fluid seal.
PECVD device the most according to claim 1, it is characterised in that described air inlet includes the first and second air inlets
Mouthful, described gas outlet includes that the first and second gas outlets, described first and second air inlets are respectively provided at the top cover of described cavity
Two ends, left and right and described first and second gas outlets be respectively provided at the two ends, left and right of bottom of described cavity, and described first He
Second air inlet and described first and second gas outlets are corresponding with the gap of adjacent described support plate.
7. according to the PECVD device according to any one of claim 1-6, it is characterised in that also include for clamping and releasing
Put the clamping device of described lowering or hoisting gear.
PECVD device the most according to claim 7, it is characterised in that described lowering or hoisting gear includes elevating lever, described
Elevating lever is vertically arranged and the two ends of described elevating lever are stretched out from the upper cover of described reaction chamber and bottom respectively.
PECVD device the most according to claim 8, it is characterised in that described clamping device includes being located at described cavity
Upper clamping mechanism on outer end face and the lower clamp system being located on described cavity outer bottom, described upper clamping mechanism and described under
Clamp system is respectively used to clamp and release the top and bottom of described elevating lever.
PECVD device the most according to claim 7, it is characterised in that described clamp system is bellows structure.
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| CN201210543858.3A CN103866282B (en) | 2012-12-14 | 2012-12-14 | Pecvd device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107326340B (en) * | 2017-08-29 | 2023-06-13 | 京东方科技集团股份有限公司 | Film forming apparatus |
| CN108950515B (en) * | 2018-06-19 | 2022-04-05 | 上海治臻新能源股份有限公司 | Fuel cell metal polar plate carbon base coating preparation facilities based on PECVD |
| CN110453201A (en) * | 2019-09-12 | 2019-11-15 | 深圳市捷佳伟创新能源装备股份有限公司 | To the process and coating apparatus of multiple graphite boats while plated film in one cavity |
| CN111254418B (en) * | 2020-02-10 | 2020-12-29 | 深圳市拉普拉斯能源技术有限公司 | PECVD coating machine |
| CN111725358A (en) * | 2020-07-28 | 2020-09-29 | 成都晔凡科技有限公司 | Transmission device |
| CN114203506B (en) * | 2020-09-18 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and method thereof |
| CN115369384A (en) * | 2022-08-08 | 2022-11-22 | 江苏龙恒新能源有限公司 | PECVD equipment for TopCon battery |
| CN116200731A (en) * | 2022-12-30 | 2023-06-02 | 湖南红太阳光电科技有限公司 | A PECVD device with adjustable electrode spacing |
| CN117867475A (en) * | 2023-02-06 | 2024-04-12 | 南通玖方新材料科技有限公司 | A silicon wafer carrier for bottom coating |
| CN117026214A (en) * | 2023-08-10 | 2023-11-10 | 拉普拉斯新能源科技股份有限公司 | Conductive carrier and semiconductor processing equipment |
| CN118895495B (en) * | 2024-08-22 | 2025-03-21 | 滁州爱沃富光电科技有限公司 | A PECVD coating process and coating system |
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| CN1430789A (en) * | 2000-04-17 | 2003-07-16 | Sr 詹姆斯·J·梅泽 | Method and apparatus for heat treatment of wafer |
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