CN103828036A - Methods of transferring layers of material in 3d integration processes and related structures and devices - Google Patents

Abstract

Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods.

Description

Method for transferring material layers in 3D integrated processing and related structures and devices

technical field

The present invention relates to a method of transferring material from a donor structure to a recipient structure in a three-dimensional (3D) integration process employed in the manufacture of semiconductor devices.

Background technique

Three-dimensional (3D) integration of two or more semiconductor structures can yield several advantages in microelectronic applications. For example, 3D integration of microelectronic components can lead to improved electrical performance and power consumption while reducing the area of device packaging. See, eg, "The Handbook of 3D Integration," by P. Garrou et al., Wiley VCH (2008). By attaching the semiconductor die to one or more additional semiconductor wafers (i.e., die-to-die (D2D)), attaching the semiconductor die to one or more semiconductor wafers (i.e., die-to-wafer (D2W) )) and attaching a semiconductor wafer to one or more additional semiconductor wafers (ie, wafer-to-wafer (W2W)) or a combination thereof allows for 3D integration of semiconductor structures.

处理的处理用于单片3D集成处理中。

处理例如在以下有所描述：授予Bruel的美国专利No.RE39,484（2007年2月6日发布）、授予Aspar等人的美国专利No.6,303,468（2001年10月16日发布）、授予Aspar等人的美国专利No.6,335,258（2002年1月1日发布）、授予Moriceau等人的美国专利No.6,756,286（2004年6月29日发布）、授予Aspar等人的美国专利No.6,809,044（2004年10月26日发布）和授予Aspar等人的美国专利No.6,946,365（2005年9月20日发布）。known in the field as

Processed processing is used in monolithic 3D integrated processing.

The process is described, for example, in U.S. Patent No. RE39,484 issued Feb. 6, 2007 to Bruel, U.S. Patent No. 6,303,468 issued Oct. 16, 2001 to Aspar et al., Aspar U.S. Patent No. 6,335,258 to Moriceau et al. (issued January 1, 2002), U.S. Patent No. 6,756,286 to Moriceau et al. (issued June 29, 2004), U.S. Patent No. 6,809,044 to Aspar et al. (2004 issued October 26, 2005) and US Patent No. 6,946,365 issued September 20, 2005 to Aspar et al.

处理涉及沿着离子植入面将多个离子（例如，氢离子、氦离子或惰性气体离子的一种或者更多种）植入到施主结构内。沿着离子植入面植入的离子限定了施主结构内的弱化面，施主结构随后沿着该弱化面裂开或断裂。如本领域已知的，离子植入施主结构内的深度至少部分地随离子植入施主结构内的能量而变化。一般来说，低能量植入的离子将以相对较浅的深度植入，而高能量植入的离子将以相对较深的深度植入。general speaking,

The treatment involves implanting a plurality of ions (eg, one or more of hydrogen ions, helium ions, or noble gas ions) into the donor structure along the ion implantation plane. The ions implanted along the ion-implantation plane define a weakened plane within the donor structure along which the donor structure subsequently cleaves or fractures. As is known in the art, the depth at which ions are implanted into the donor structure varies at least in part with the energy with which the ions are implanted into the donor structure. In general, low energy implanted ions will be implanted at a relatively shallow depth, while high energy implanted ions will be implanted at a relatively deep depth.

处理中再使用，以将施主结构的附加部分转移至受主结构。The donor structure is bonded to another acceptor structure, and the donor structure is then cleaved or fractured along the ion implantation plane. For example, the bonded donor and acceptor structures can be heated to cause the donor structures to cleave or fracture along the ion implantation plane. Optionally, a mechanical force can be applied to the donor structure to assist in cleaving the donor structure along the ion implantation plane. After the donor structure is cleaved or fractured along the ion implantation face, a portion of the donor structure remains bonded to the acceptor structure. The rest of the donor structure can be further

Re-use in processing to transfer additional portions of the donor structure to the acceptor structure.

After the fracture process, the fractured surface of the donor structure may include ionic impurities and defects in the crystal lattice of the donor structure, which in some applications may include single crystal semiconductor material. The portion of the donor structure that is transferred to the acceptor structure can be treated in an effort to reduce the level of impurities in the transferred portion of the donor structure and improve the lattice quality (i.e., reduce the number of defects in the lattice adjacent to the fractured surface ). Such processing often involves thermal annealing at elevated temperatures, eg, about 1000°C.

Contents of the invention

The Summary section is provided to introduce a selection of concepts in a simplified form. These concepts are described in more detail below in the detailed description of example embodiments of the present disclosure. This Summary is not intended to identify key features or important features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

In some embodiments, the invention includes a method of transferring a layer of semiconductor material from a first donor structure to a second structure. According to the method, ions may be implanted into the first donor structure to form a substantially planar weakened region within the first donor structure defined by the implanted ions. The substantially planar region of weakness may separate said layer of semiconductor material of the first donor structure from the remainder of the first donor structure. At least one of the concentration of the implanted ions and the elemental composition of the implanted ions may be formed to vary in at least one direction parallel to the substantially flat weakened region across the substantially flat weakened region. The first donor structure may be bonded to the second structure, and the first donor structure may be fractured along the substantially planar weakened region, thereby leaving the layer of semiconductor material bonded to the second structure.

In other embodiments, the invention includes methods of fabricating semiconductor devices. According to the method, a layer of semiconductor material can be transferred from the first donor structure to the second structure. The step of transferring the layer of semiconductor material may include: implanting ions into the first donor structure to form a substantially planar weakened region within the first donor structure defined by the implanted ions; bonding the first donor structure to the second donor structure. a second structure; and fracturing the first donor structure along the substantially planar weakened region, thereby leaving the layer of semiconductor material bonded to the second structure. A substantially planar weakened region formed within the first donor structure may separate said layer of semiconductor material of the first donor structure from the remainder of the first donor structure. In addition, the substantially flat weakened region may be formed such that at least one of the concentration of the implanted ions and the elemental composition of the implanted ions is along at least one direction parallel to the substantially flat weakened region throughout the substantially flat weakened region Variety. Multiple active device structures can be fabricated on the transferred layer of semiconductor material.

In other embodiments, the present invention includes semiconductor structures fabricated using the methods disclosed herein. For example, a semiconductor structure may include a first donor structure having a substantially planar weakened region therein. The substantially planar weakened region may be defined by implanted ions within the first donor structure along the substantially planar weakened region. A substantially planar region of weakness may separate the semiconductor material layer of the first donor structure from the remainder of the first donor structure. Additionally, at least one of the concentration of the implanted ions and the elemental composition of the implanted ions may vary across the substantially planar weakened region in at least one direction parallel to the substantially planar weakened region. The semiconductor structure may further comprise a second structure bonded to said layer of semiconductor material of the first donor structure.

Description of drawings

The specification concludes with the claims, and while the claims particularly point out and distinctly claim embodiments of the invention, advantages of embodiments of the disclosure emerge from certain aspects of the embodiments of the disclosure when read in conjunction with the accompanying drawings. This can be more easily determined in the description of the example, where:

1A-1F are simplified schematic illustrations of donor and/or acceptor structures in a method of transferring a layer of semiconductor material from a first donor structure to a second acceptor structure according to some embodiments of the methods of the present disclosure. A cross-sectional view of where a non-uniform ion-implanted facet is formed within the donor structure;

2A to 2G are simplified schematic illustrations of donor and/or acceptor structures in a method of transferring a layer of semiconductor material from a first donor structure to a second acceptor structure according to other embodiments of the method of the present disclosure. wherein ions are implanted through selected regions of the donor structure, the selected regions including recesses formed in the donor structure;

3A and 3B are simplified schematic cross-sectional views illustrating the processing of a donor structure according to some embodiments of the methods of the present disclosure, wherein ions are implanted through selected regions of the donor structure, including the formation of a dielectric material in a recess in the donor structure;

4A and 4B are simplified schematic cross-sectional views illustrating the processing of a donor structure according to some embodiments of the methods of the present disclosure, wherein a multiple ion implantation process is used to form a non-uniform ion implantation plane within the donor structure ;

5A and 5B are simplified schematic cross-sectional views illustrating the processing of a donor structure according to other embodiments of the methods of the present disclosure, wherein multiple ion implantation processes are used to form non-uniform ion implantation planes within the donor structure ;

6A and 6B are simplified schematic cross-sectional views illustrating processing of a donor structure comprising a semiconductor-on-insulator structure according to an embodiment of the method of the present disclosure;

7A and 7B are simplified schematic cross-sectional views illustrating processing of a donor structure comprising a semiconductor-on-insulator type structure and having an ion confinement layer therein according to an embodiment of the method of the present disclosure; and

8A-8E are simplified schematic cross-sectional views illustrating processing of a donor structure in which sidewall spacers are formed in the recess prior to implanting ions through the recess into the donor structure according to an embodiment of the method of the present disclosure. pieces.

Detailed ways

The illustrations provided herein are not meant to be actual illustrations of any particular semiconductor structure, device, system, or method, but are merely idealized representations used to describe embodiments of the present disclosure.

Any headings used herein should not be construed as limiting the scope of embodiments of the invention, which is defined by the claims and their equivalents. Throughout the specification, concepts described in any particular heading can generally be applied to other sections.

None of the cited references, however characterized herein, are admitted to be prior art to the present invention with respect to the subject matter claimed herein.

According to some embodiments, a method of transferring a layer of material, such as a layer of semiconductor material, from a first donor structure to a second acceptor structure includes: implanting ions into the first donor structure to form in the first donor structure A generally flat region of weakness defined by implanted ions. A substantially planar region of weakness separates the layer of material to be transferred from the first donor structure from the remainder of the first donor structure. The generally planar weakened zone is non-uniform along at least one direction parallel to the generally planar weakened zone across the generally planar weakened zone. For example, at least one of the concentration of the implanted ions and the elemental composition of the implanted ions may vary across the substantially planar weakened region along at least one direction parallel to the substantially planar weakened region. The first donor structure can be bonded to the second acceptor structure, and then the first donor structure can be fractured along the substantially planar weakened region, leaving the material layer bonded to the second acceptor structure. This method is described in more detail herein below.

FIG. 1 is a simplified schematic cross-sectional view illustrating a donor structure 100 . The donor structure 100 comprises a bulk material 102 which may eg comprise semiconductor materials such as silicon, germanium, III-V semiconductor materials (eg GaN, GaAs, InN, AlN, InGaN, etc.) or mixtures of these semiconductor materials. Material 102 may be polycrystalline or may include single crystal material. The donor structure 100 can be generally planar and can have a first major surface 104A and an opposing second major surface 104B oriented parallel to the first major surface 104A.

As shown in FIG. 1A , ions (indicated by the directional arrows in FIG. 1A ) may be implanted into the donor structure 100 only through selected regions of the donor structure 100 . The ions may include, for example, one or more of hydrogen ions, helium ions, and noble gas ions. Ions may be implanted into the donor structure 100 along the ion implantation face 106 . As shown in FIG. 1A , ions may be implanted into the donor structure 100 through the first major surface 104A in a direction substantially perpendicular to the first major surface 104A.

The depth to which ions are implanted into the donor structure 100 is at least partially a function of the energy with which the ions are implanted into the donor structure 100 . Generally, ions implanted with a low energy will be implanted at a relatively shallow depth, while ions implanted with a high energy will be implanted at a relatively deep depth. The ions may be implanted into the donor structure 100 with a predetermined energy selected to implant the ions into the donor structure 100 at a desired depth from the first major surface 104A. At least some ions may be implanted at a depth other than the desired implantation depth, and a graph of the concentration of ions within the donor structure 100 as a function of depth within the donor structure 100 from the first major surface 104A may be presented at the area defining the ion implantation surface 106. A roughly bell-shaped (symmetrical or asymmetrical) curve with a maximum at the desired implant depth of . In other words, ion implantation face 106 may comprise a layer or region within donor structure 100 that is aligned with (eg, centered on) the face of maximum ion concentration in donor structure 100 . The ion-implantation facet 106 defines a region of weakness in the donor structure 100 along which the donor structure 100 may cleave or fracture during subsequent processing, as discussed in more detail below. For example, referring briefly to FIG. 1B , the presence of ions in the donor structure can create defects 108 in the crystal lattice of the donor structure 100 .

The ion implantation plane 106 shown in FIG. 1B may comprise a single implantation plane, where the majority of ions are disposed along a single plane within the donor structure 100 . In other words, most of the implanted ions are concentrated at a single depth within the donor structure 100 . This is in contrast to structures where implantation of ions can result in multiple implant planes. For example, multiple implants within the donor structure can be obtained by multiple implant treatments with different implant energies or by implanting within the donor structure non-uniformly (i.e., non-uniform implant surface topography and/or non-uniform implant material composition). noodle.

A material layer 110 to be transferred from the donor structure 100 to another acceptor structure is defined on one side of the ion implantation face 106, and the remaining portion 112 of the donor structure 100 is disposed on the opposite side of the ion implantation face 106 from the material layer 110 .

Referring again to FIG. 1A , the generally planar weakened region along the ion-implanted face 106 is non-uniform along at least one direction parallel to the ion-implanted face 106 throughout the weakened region, as previously described. For example, at least one of the concentration of the implanted ions and the elemental composition of the implanted ions may vary across the generally planar weakened region. To form such a non-uniform weakened region, ions may be implanted only through selected regions of the donor structure 100 in some embodiments. For example, ions may be implanted into donor structure 100 through vias 116 in patterned mask 118 . 1A, patterned mask 118 may be formed on major surface 104A of donor structure 100, or patterned mask 118 may be formed separately from donor structure 100 and simply disposed on major surface 104A of donor structure 100. (disposed directly on the main surface 104A, or vertically separated from the main surface 104A above the main surface 104A).

By implanting ions into the donor structure 100 through the vias 116 in the patterned mask 118 , ions are implanted only through the first plurality of regions 120 of the material layer 110 and not through the second plurality of regions 122 of the material layer 110 . The first plurality of regions 120 and the second plurality of regions 122 are indicated in FIGS. 1A and 1B by vertically oriented dashed lines. The material of mask 118 impedes (eg, prevents) implantation of ions into donor structure 100 through second plurality of regions 122 . As previously mentioned, material layer 110 may comprise semiconductor material that will ultimately be used to fabricate active semiconductor device structures (e.g., transistors, capacitors, conductive pathways, etc.) on the acceptor structure (to which material layer 110 will be transferred) . According to some embodiments of the present disclosure, vias 116 may be selectively formed in patterned mask 118 such that the vias are disposed over portions of what will be inactive regions of material layer 110 and in contact with what will be inactive regions of material layer 110 . Portions of the source region are vertically aligned so that the material of the mask 118 shields the active region of the material layer 110 from entry of ions. In other words, first plurality of regions 120 of material layer 110 may include inactive regions of material layer 110 , and second plurality of regions 122 may include active regions of material layer 110 .

As used herein, the term "inactive region" when used in reference to a layer of material to be transferred from a donor structure to a recipient structure means and includes a region, in a finished device that does not include any active device structures, Said regions ultimately comprise passivated regions in the material layer. As used herein, the term "active region" when used in reference to a layer of material to be transferred from a donor structure to an acceptor structure means and includes a region in which one or more active device structures (such as transistors, One or more of a capacitor and a conductive path), the region eventually includes the active region in the material layer 110 .

As noted above, ions may be implanted through the inactive regions of the material layer 110 (the first plurality of regions 120 ) without implanting any appreciable amount of ions through the active regions of the material layer 110 (the second plurality of regions 122 ). . Thus, due to the presence of a relatively higher concentration of ions in the substantially weakened region adjacent to the first plurality of regions 120 relative to the concentration (which may be at least substantially zero) of ions present in the substantially weakened region adjacent to the first plurality of regions 120, The substantially planar weakened region defined by the ion-implantation face 106 is thus non-uniform across the substantially planar weakened region along at least one direction parallel to the substantially planar weakened region. Accordingly, embodiments of the present invention may be used to reduce damage to the active region (ie, the second plurality of regions 122 ) that may be caused by the ion implantation process.

Referring to FIG. 1C , the first major surface 104A of the donor structure 100 (including the surface of the material layer 110 to be transferred) may be bonded to a recipient structure 130 . In some embodiments, the donor structure 100 may be bonded to the acceptor structure 130 after ions are implanted into the donor structure 100 as described above. In other embodiments, ions may be implanted into the donor structure 100 through the opposing major surface 104B of the donor structure 100 after the first major surface 104A of the donor structure 100 is bonded to the acceptor structure 120 . After bonding the first major surface 104A of the donor structure 100 to the acceptor structure 120, it may be relatively difficult to perform the implantation process because of the higher energy required to implant ions at the desired depth.

In some embodiments, the donor structure 100 can be bonded directly to the acceptor structure 130 using a direct bonding process. The so-called "direct bonding method" is a method of establishing a direct solid-cure chemical bond between two structures to bond them together without using an intermediate bonding material between them. Direct metal-metal bonding methods and direct oxide-oxide bonding methods have been developed to bond a metal or oxide material at the surface of a first structure to a metal or oxide material at the surface of a second structure. This approach is discussed, for example, in P. Garrou, et al., "The Handbook of 3D Integration," Wiley VCH (2008) Volume 1, Chapter 11.

Thus, if the bulk material 102 of the donor structure 100 and/or the material of the acceptor structure 130 does not include a suitable material for such a direct bonding process at its bonding surface, then the The bonding surface of the primary structure 130 provides a suitable bonding material. For example, FIG. 1C shows bonding material 124 at the bonding surface (first major surface 104A) of donor structure 100 and bonding material 132 at the bonding surface of acceptor structure 130 .

Bonding material 124 and bonding material 132 may have similar compositions and may include, for example, metallic materials (such as copper, aluminum, titanium, tungsten, nickel, etc., or alloys of these metals), oxide materials (such as silicon oxide), or semiconductor materials ( Such as silicon, germanium, compound semiconductor materials, etc.).

The bonding surfaces of bonding material 124 and bonding material 132 may be cleaned to remove surface impurities and surface compounds (eg, native oxides). In addition, the surface roughness of the bonding surfaces can be reduced to increase the area of close contact between the bonding surfaces at the atomic level. The area of intimate contact between the joining surfaces is usually achieved by: polishing the joining surfaces to reduce the surface roughness at most to a value close to the atomic level; applying pressure between the joining surfaces to cause plastic deformation; or polishing the joining surfaces and Both pressures are applied to obtain this plastic deformation.

After the joining surfaces are prepared, they can be brought into intimate contact with each other. The attractive force between the joining surfaces is high enough to cause molecular adhesion (joining caused by the total attractive force (van der Waals forces) of electronic interactions between atoms and/or molecules of the two surfaces to be joined). A tool such as a stylus may then be pressed against the exposed major surface 104B of the donor structure 100 (and/or the exposed major surface of the acceptor structure 130) to initiate a bonding wave between the donor structure 100 and the acceptor structure 130. Propagation across the interface between joined surfaces. The point of application of the tool may eg be located in the center of the donor structure 100 and/or the acceptor structure 130 or near their peripheral edges. Such an approach is disclosed, for example, in US Patent Application Publication No. US2011/0045611A1 published February 24, 2011 in the name of Castex et al.

Optionally, the donor structure 100 and/or the acceptor structure 130 may be heated during the bonding process to aid in the bonding process.

The acceptor structure 130 may include a die or wafer, and in some embodiments may include a previously fabricated active device structure 134 . Active device structures 134 schematically shown in FIG. 1C represent transistors, but active device structures 134 may include other types of active device structures, such as capacitors, wires, traces, and/or vias, and the like. Active device structures 134 may include materials or structures that may be adversely affected when exposed to excess thermal energy. Thus, in some embodiments, the bonding process may be performed at a temperature of about 400°C or less, about 200°C or less, or even at room temperature.

After bonding the donor structure 100 to the acceptor structure 130, the donor structure 100 can be cleaved or fractured along the ion implantation face 106 to form the structure shown in FIG. Material 124 and bonding material 132 are bonded to material layer 110 of acceptor structure 130 . For example, the donor structure 100 (and optionally the acceptor structure 130 ) may be heated to cause the donor structure 100 to cleave or fracture along the ion implantation face 106 . In some embodiments, the temperature of the donor structure 100 and the acceptor structure 130 can be maintained at about 500°C or less, about 400°C or less, or even about 350°C or less during the fracture process. Limiting the temperature during the fracture process may be desirable, eg, to prevent damage to previously formed active device structures on the acceptor structure 130 . However, in other embodiments, the cleaving process may be performed at elevated temperatures. Optionally, a mechanical force may be applied to the donor structure 100 to cause or facilitate cleaving or fracture of the donor structure 100 along the ion implantation face 106 .

After the fracture process, the material layer 110 remains bonded to the acceptor structure 130, and the remainder of the donor structure 100 can be reused to transfer additional layers of material to the acceptor structure as needed.

After the fracture process, the exposed fractured surface 111 of the material layer 110 may include defects and impurities in the crystal lattice of the transferred material layer 110 . Additionally, at the fractured surface 111 of the material layer 110 adjacent to the first plurality of regions 120 ( FIG. 1B ), through which the ions are implanted, there may be defects 108 caused by the implanted ions as previously described. Accordingly, the fractured surface 111 of the material layer 110 may be treated to remove impurities (eg, implanted ions) and to improve the quality of the crystal lattice in the material layer 110 near the fractured surface 111 . For example, fractured surface 111 may be subjected to one or more of chemical etching, mechanical polishing, and chemical mechanical polishing (CMP) to form the structure shown in FIG. 1E . The structure of FIG. 1E is substantially similar to that of FIG. 1D , but surface 111 is shown free of defects 108 to represent an improved quality of surface 111 relative to the surface of FIG. 1D .

The processing used to improve the quality of the material layer 110 near the surface 111 may not render the material layer 110 completely free of impurities or of perfect crystalline quality. However, the quality of the second plurality of regions 122 (which may include active regions) may be better relative to the first plurality of regions 120 (which may include inactive regions) due to the implantation of ions through the first plurality of regions 120. , without implanting ions through the second plurality of regions 122 .

Referring to FIG. 1F , active device structures 140 may be fabricated in and/or on transferred material layer 110 . The active device structure 140 shown schematically in FIG. 1C represents a transistor, but the active device structure 140 may include other types of active device structures, such as capacitors, wires, traces and/or vias, and the like. Additionally, the active device structure 140 may include any of CMOS-type transistors, vertical transistors, diodes (eg, PN junctions), components of cross-point memory devices (eg, phase-change memory or another type of resistive memory device), and the like . Optionally, active device structures 140 may be fabricated in and/or on the active second plurality of regions 122 without mass fabrication of active device structures 140 on the inactive first plurality of regions 120, as shown in FIG. 1F shown. As a result of fabrication on and/or in the surface 111 of the improved quality material layer 110, the reliability of the performance of the active device structure 140 may be increased.

Subsequent processing may continue according to known methods to complete the fabrication of one or more semiconductor devices. Such semiconductor devices may include, for example, electronic signal processor devices, memory devices, photosensitive devices (e.g., radiation emitting devices such as lasers, light emitting diodes, etc., or radiation receiving devices such as photodetectors, solar cells, etc.), micro machinery etc.

One or more of the active device structures 140 may be operably combined with one or more of the active device structures 134 of the acceptor structure 130 by utilizing one or more vertically extending conductive The vias, conductive pads, and laterally extending wires establish electrical contact therebetween.

2A-2G illustrate other embodiments of the methods of the present disclosure. 2A is similar to FIG. 1A and shows the implantation of ions through the vias 166 in the patterned mask 168, selectively implanting the ions into the donor structure 150 through the first plurality of regions 170 of the material layer 160 to be transferred. ions are implanted without passing through the second plurality of regions 172 of the material layer 160 . However, prior to implanting ions along ion implantation face 156 to form a non-uniform substantially weakened region, a plurality of recesses 164 may be formed in first major surface 154A of donor structure 150 in first plurality of regions 170, as Figure 2A.

Recess 164 may be formed in donor structure 150 by using, for example, a mask and etching process. In some embodiments, the same mask 168 used in the ion implantation process may be used as an etch mask first to form the recess 164 . For example, patterned mask 168 may be formed by depositing an oxide material, a nitride material, or an oxynitride material on surface 154A of the donor structure. Vias 166 may then be formed through mask 168 using a photolithographic process. For example, a patterned photomask may be deposited over the material used to form mask 168 and an etching process may be used to etch vias 166 in mask 168 by using the patterned photomask, after which the photomask may be removed. Patterned mask 168 can then be used to form recesses 164 in donor structure 150, ions can then be implanted through recesses 164 and first plurality of regions 170 of material layer 160, mask 168 is used to mask a second plurality of regions 170 of material layer 160. A region 172 prevents ions from entering.

By implanting ions through vias 164 , the depth of ion-implanted face 156 in donor structure 156 from major surface 154A may be increased. For example, in some embodiments, the ion-implantation face 156 may be disposed about 1.5 μm or more from the major surface 154A of the donor structure 150 through which ions are implanted. Implanting ions into the donor structure 150 further from the major surface 154A enables the transfer of a relatively thicker layer of material 160 to the acceptor structure.

FIG. 2B shows the structure after removal of mask 168 and shows defects 158 in donor structure 150 adjacent first plurality of regions 170 caused by the ion implantation process. As previously mentioned, the ion implantation facet 156 shown in FIG. 2A may comprise a single implantation facet, wherein the majority of ions are disposed along a single facet in the donor structure 150 . In other words, most of the implanted ions are concentrated at a single depth in the donor structure 150 .

Referring to FIG. 2C , the recess 164 may be filled with a dielectric material 165 . For example, dielectric material may be blanket deposited on the structure of FIG. 2B , and then a chemical mechanical polishing (CMP) process may be used to remove excess dielectric material beyond recesses 164 on major surface 154A of donor structure 150 .

As shown in Figure 2D, the donor structure 150 may be bonded to the acceptor structure 180 in the manner previously described with reference to Figure 1C. The acceptor structure 180 may include an active device structure 184 in some embodiments. Additionally, as previously discussed, bonding material 174 may be disposed on the bonding surface (first major surface 154A) of donor structure 150 and bonding material 182 may be disposed on the bonding surface of acceptor structure 180 . Bonding material 174 and bonding material 182 may have similar compositions and may include, for example, metallic materials (eg, copper or copper alloys) or oxide materials (eg, silicon oxide). A direct metal-metal or oxide-oxide bond may be established between adjoining surfaces of bonding material 174 and bonding material 182, as previously described with reference to FIG. 1C.

After the donor structure 150 is bonded to the acceptor structure 180, the donor structure 150 can be cleaved or fractured along the ion implantation face 156 to form the structure shown in FIG. Material layer 160 of structure 180 . The donor structure 150 may be fractured along the ion implantation face 156 as previously described with reference to FIG. 1D . After the fracture process, the exposed fractured surface 161 of the material layer 160 may include defects and impurities in the crystal lattice of the transferred material layer 160 . Additionally, defects 158 caused by implanted ions as previously described may exist at fractured surfaces 161 proximate to first plurality of regions 170 ( FIG. 2B ) of material layer 160 through which ions were implanted. Accordingly, the fractured surface 161 of the material layer 160 may be treated to remove impurities (eg, implanted ions) and improve the quality of the crystal lattice in the material layer 160 near the fractured surface 161 . For example, fractured surface 161 may be subjected to one or more of chemical etching, mechanical polishing, and chemical mechanical polishing (CMP) to form the structure shown in FIG. 2F . Alternatively, dielectric material 156 may be used as an etch stop material. In other words, one or more of a chemical etching process, a mechanical polishing process, and a chemical mechanical polishing (CMP) process may be utilized to remove material from the fractured surface 161 until the bulk of the dielectric material 156 becomes exposed. Thus, in some embodiments, the inactive first plurality of regions 170 of the transferred material layer 160 may be at least substantially removed ( FIG. 2B ). In other embodiments, a portion of the inactive first plurality of regions 170 ( FIG. 2B ) of the transferred material layer 160 may remain. The structure of FIG. 2F is similar to that of FIG. 2E , but regions of surface 161 that previously included defect 158 ( FIG. 2E ) are removed.

Referring to FIG. 2G , active device structures 190 may be fabricated in and/or on transferred material layer 160 . Active device structures 190 schematically shown in FIG. 2G represent transistors, but active device structures 190 may include other types of active device structures, such as capacitors, wires, traces, and/or vias, and the like. Additionally, the active device structure 190 may include any of CMOS type transistors, vertical transistors, diodes (eg, PN junctions), components of cross-point memory devices (eg, phase change memory or other types of resistive memory devices), etc. . Alternatively, active device structures 190 may be fabricated in and/or on active second plurality of regions 172 without fabricating a significant amount of active device structures 190 on inactive first plurality of regions 170, as Figure 2G shows. As a result of being fabricated on and/or in the surface 161 of the improved quality material layer 160, the performance reliability of the active device structure 190 may be increased.

Subsequent processing may continue according to known methods to complete the fabrication of one or more semiconductor devices, as previously described.

In additional embodiments, methods similar to those described above with reference to FIGS. 2A-2G may be performed in which the ion implantation process is performed after forming the recesses in the donor structure and after filling the recesses with a dielectric material. For example, FIG. 3A shows a donor structure 200 similar to the donor structure 150 shown in FIG. 2A. Donor structure 200 includes bulk material 202 and has a first major surface 204A and an opposing second major surface 204B. As described with respect to donor structure 150 , a plurality of recesses 212 may be formed in first major surface 204A of donor structure 200 .

Recess 212 may be formed in donor structure 200 using, for example, masking and etching processes. For example, patterned mask 216 may be formed by depositing an oxide material, a nitride material, or an oxynitride material on surface 204A of donor structure 200 . A photolithographic process may then be used to form via holes 218 through mask 216 . For example, a patterned photomask may be deposited over the material used to form mask 216, and vias 218 may be etched in mask 216 using an etching process using the patterned photomask, after which the photomask may be removed. Patterned mask 216 may then be used to form recesses 212 in donor structure 200 .

Referring to FIG. 3B , a dielectric material 214 may be disposed in the recess 212 as previously described with respect to the dielectric material 165 of FIG. 2C . Dielectric material 214 may be disposed in recess 212 prior to implanting ions into donor structure 200 . Ions may be implanted into donor structure 200 through recess 212 and generally along ion implantation face 206 through dielectric material 214 in recess 212 to define a generally planar region of weakness in donor structure 200 . As previously mentioned, the ion implantation plane 206 shown in FIG. 3B may comprise a single implantation plane, wherein the majority of ions are disposed along a single plane in the donor structure 200 . In other words, most of the implanted ions are concentrated at a single depth in the donor structure 200 . A layer 210 of material to be transferred from the donor structure 200 may be defined between the ion implantation face 206 and the first major surface 204A.

As previously described, ions may be implanted in the first plurality of regions 220 in the donor structure 200 without implanting ions in the second plurality of regions 222 in the donor structure 200 . Defects 208 are shown along ion-implanted face 206 in first plurality of regions 220 . In some implementations, the first plurality of regions 220 may include inactive regions of the donor structure 200 and the second plurality of regions 222 may include active regions in the donor structure 200 . Although mask 216 is not shown in FIG. 3B , in some embodiments, the same mask 216 used to form recess 212 can be used in the ion implantation process to form a non-uniform weakened region along ion implantation face 206. . In other embodiments, different masks may be used.

After implanting ions as described above, the material layer 210 may be transferred to the acceptor structure using methods as previously described herein with reference to FIGS. 2D to 2G .

In the previously described embodiments, ions are implanted through the first plurality of regions of the layer of material to be transferred and not through the second plurality of regions of the layer of material to be transferred such that ions are implanted within the donor structure along The generally planar weakened zone of the face is non-uniform. According to embodiments of the present disclosure, other methods may be used to form the non-uniform weakened region. In additional embodiments, ions may be implanted through both the first and second plurality of regions of the layer of material to be transferred, but such that the concentration of ions in the regions, the elemental composition of the ions, or both are within There is a difference between the first plurality of regions and the second plurality of regions of the layer of material to be transferred. In these additional embodiments, ions implanted through both the first plurality of regions and the second plurality of regions may form a single implant plane, wherein a substantial majority of the implanted ions are located within the implanted donor structure.

For example, FIG. 4A shows a plurality of ions implanted into donor structure 250 along ion implantation plane 256 during a first ion implantation process. As previously described, the donor structure 250 can include a bulk material 252 and have a first major surface 254A and an opposing second major surface 254B. Ions can be uniformly implanted into the donor structure 250 such that in both the first plurality of regions 270 and the second plurality of regions 272, the first plurality of defects 258 are formed in a substantially uniform manner across the entire ion-implanted face 256 .

Referring to FIG. 4B , after the first ion implantation process, additional ions may be implanted through the first plurality of regions 270 without implanting additional ions through the second plurality of regions using a second ion implantation process. Ions may be implanted into donor structure 250 through vias 268 in patterned mask 266, as previously described herein. The ions of the second ion implantation treatment may be of the same elemental composition or of a different elemental composition relative to the ions of the first ion implantation treatment. As a result, additional defects 259 are formed along ion-implanted facet 256 in first plurality of regions 270 without forming additional defects 259 in second plurality of regions 272 .

As shown in FIG. 4B , a plurality of recesses 264 may optionally be formed in first major surface 254A of donor structure 250 as previously described using, for example, masking and etching processes. Ions may be implanted through the recesses 264 into the first plurality of regions 270 (shown in FIG. 4B ) in the manner previously described with reference to FIG. 2A . In other embodiments, a dielectric material may be disposed in the recess 264 prior to the second ion implantation process, and ions may be implanted through the dielectric material within the recess 264 in the manner previously described with reference to FIG. 3B .

After the second ion implantation process, other processes may be performed to transfer the material layer 260 to the acceptor structure using methods as previously described herein with reference to FIGS. 2C-2G .

In other embodiments, the first ion implantation process may include a selective non-uniform ion implantation process like the second ion implantation process. For example, FIG. 5A illustrates the implantation of ions into donor structure 300 along ion implantation face 306 in a first ion implantation process. As previously described, the donor structure 300 can include a bulk material 302 and have a first major surface 304A and an opposing second major surface 304B. Ions may be non-uniformly implanted into the donor structure 300 such that the first plurality of defects 308 are formed in the second plurality of regions 322 (which may include active regions) without implanting ions into the first plurality of regions 320 (which may including passive regions). Although not shown in FIG. 5A , ions may be implanted into the second plurality of regions 322 in the donor structure 300 through vias in the patterned mask, as previously described herein.

Referring to FIG. 5B , after the first selective non-uniform ion implantation process, additional ions may be implanted through the first plurality of regions 320 using a second selective non-uniform ion implantation process without injecting additional ions through A second plurality of regions 322 is implanted. Ions may be implanted into the donor structure 300 through the vias 318 in the patterned mask 316, as previously described herein. The ions of the second ion implantation treatment may be of the same elemental composition or of a different elemental composition relative to the ions of the first ion implantation treatment. As a result, additional defects 309 are formed along the ion-implanted facet 306 in the first plurality of regions 320 , while such additional defects are not formed in the second plurality of regions 322 . The second plurality of defects 309 may be more extensive and/or more pronounced relative to the first plurality of defects 308 such that a weakened region is defined along the ion-implanted face 306 in the first plurality of regions 320 than in the second plurality of regions 320 . The ones in 322 are relatively weaker (more prone to breaking).

As shown in Figure 5B, a plurality of recesses 312 may optionally be formed in the first major surface 304A of the donor structure 300 using, for example, a masking and etching process as previously described. Ions may be implanted through the recesses 312 into the first plurality of regions 320 (shown in FIG. 5B ) in the manner previously described with reference to FIG. 2A . In other embodiments, a dielectric material may be provided in the recess 312 prior to the second ion implantation process, and ions may be implanted through the dielectric material in the recess 312 in the manner previously described with reference to FIG. 3B . As shown in FIG. 5B , the first selective non-uniform ion implantation process and the second non-uniform ion implantation process may result in ions being concentrated at a single implant face 309 in the donor structure 300 . In other words, the first selective non-uniform ion implantation and the second non-uniform ion implantation may be implanted to substantially the same depth in the donor structure 300 .

After the second ion implantation process, other processes may be performed to transfer the material layer 310 to the acceptor structure using methods as previously described herein with reference to FIGS. 2C-2G .

In any of the methods previously described herein, the donor structure may optionally comprise a semiconductor-on-insulator (SeOI) type substrate (eg, a silicon-on-insulator (SOI) type substrate). For example, FIGS. 6A and 6B illustrate a method similar to that previously described with reference to FIGS. 5A and 5B , however, where the donor structure comprises a semiconductor-on-insulator (SeOI) type substrate. Of course, any other method described herein is also performed using a semiconductor-on-insulator (SeOI) type substrate, as described below with reference to FIGS. 6A and 6B .

Referring to FIG. 6A , a donor structure 350 is shown comprising a base substrate 390 and a layer of semiconductor material 392 with a layer of dielectric material 394 interposed therebetween. In other words, the semiconductor material layer 392 is disposed on a side of the dielectric material layer 394 opposite to the base substrate 390 . Dielectric material layer 394 may include what is known in the art as a "buried oxide layer" (BOL), and may include, for example, a ceramic material such as a nitride (silicon nitride (eg, Si ₃ N ₄ )) or an oxide ( For example, silicon oxide (SiO ₂ ) or aluminum oxide (Al ₂ O ₃ )). In some embodiments, the dielectric material layer 394 may have an average total thickness. The semiconductor material layer 392 may include, for example, silicon, germanium, III-V semiconductor materials (eg, GaN, GaAs, InN, AlN, InGaN, etc.), or mixtures of these semiconductor materials. The layer of semiconductor material 392 may be polycrystalline, or may comprise a single crystal of material. The base substrate 390 may include, for example, a ceramic material or a semiconductor material. In some embodiments, base substrate 390 may have a composition that is at least substantially similar to that of semiconductor material layer 392 . Like the previously described donor structures, the donor structure 350 has a first major surface 354A and an opposing second major surface 354B.

FIG. 6A shows a plurality of ions implanted into the donor structure 350 along the ion implantation facet 306 in a first ion implantation process. Ions may be non-uniformly implanted into the donor structure 350 such that the first plurality of defects 358 are formed in the second plurality of regions 372 (which may include active regions) without implanting ions into the first plurality of regions 370 (which may including passive regions). Although not shown in FIG. 6A , as previously described herein, ions may be implanted into the second plurality of regions 372 in the donor structure 350 through the vias in the patterned mask.

Referring to FIG. 6B, after the first selective non-uniform ion implantation process, additional ions may be implanted through the first plurality of regions 370 using a second selective non-uniform ion implantation process without adding additional ions. Ions are implanted through the second plurality of regions 372 . Ions may be implanted into donor structure 350 through vias 368 in patterned mask 366 as previously described herein. The ions of the second ion implantation treatment may be of the same elemental composition or of a different elemental composition relative to the ions of the first ion implantation treatment. As a result, additional defects 359 are formed along the ion-implanted facet 356 in the first plurality of regions 370 , while such additional defects are not formed in the second plurality of regions 372 . The second plurality of defects 359 may be more extensive and/or more pronounced relative to the first plurality of defects 358 such that a weakened region is defined along the ion-implanted face 356 in the first plurality of regions 370 than in the second plurality of regions 370 . The ones in 372 are relatively weaker (more prone to breaking).

As shown in Figure 6B, a plurality of recesses 362 may optionally be formed in the first major surface 354A of the donor structure 350 using, for example, a masking and etching process as previously described. Ions may be implanted through the recesses 362 into the first plurality of regions 370 (shown in FIG. 6B ) in the manner previously described with reference to FIG. 2A . In other embodiments, a dielectric material may be disposed in the recess 362 prior to the second ion implantation process, and ions may be implanted through the dielectric material in the recess 362 in the manner previously described with reference to FIG. 3B . As described in previous embodiments, the first selective non-uniform ion implantation process and the second non-uniform ion implantation process may result in ions being concentrated at a single implant face 309 in the donor structure 350 . In other words, the first selective non-uniform ion implantation and the second non-uniform ion implantation may be implanted to substantially the same depth in the donor structure 350 .

After the second ion implantation process, other processes may be performed to transfer the material layer 360 to the acceptor structure using methods as previously described herein with reference to FIGS. 2C-2G .

In any of the methods previously described herein, the donor structure may optionally include at least one ion confinement layer therein to help confine ions close to the desired ion implantation facet. For example, Figures 7A and 7B illustrate a method similar to that previously described with reference to Figures 6A and 6B, however, where the donor structure also includes an ion confinement layer. Of course, any other method described herein may also be performed using a donor structure comprising an ion confinement layer, as described below with reference to FIGS. 7A and 7B .

7A, the illustrated donor structure 400 includes a semiconductor-on-insulator (SeOI) type substrate, which is substantially similar to the substrate of FIG. 6A, and includes a base substrate 440, a layer of semiconductor material 442, and A layer of dielectric material 444 between layers of material 442 . The donor structure 400 also includes an ion confinement layer 446 disposed on the dielectric material layer 444 with the semiconductor material layer 442 disposed on one side thereof. In other words, ion confinement layer 446 may be buried in semiconductor material layer 442 , or it may be disposed between semiconductor material layer 442 and dielectric material layer 444 .

Ion confinement layer 446 may include, for example, a portion of semiconductor material layer 442 that is doped with, for example, boron, carbon, or other elements prior to an ion implantation process for forming a substantially weakened region along ion implantation face 406 . The presence of dopant elements may render ion confinement layer 446 relatively impenetrable to ions during the implantation process. In other embodiments, the ion confinement layer 446 may comprise a material (doped or undoped) that is different from the semiconductor material layer 442 and that is relatively impenetrable to the ions to be implanted compared to the semiconductor material layer 442. ).

FIG. 7A shows a plurality of ions implanted into the donor structure 400 along the ion implantation plane 406 in a first ion implantation process. Ions may be non-uniformly implanted into the donor structure 400 such that the first plurality of defects 408 are formed in the second plurality of regions 422 (which may include active regions) without implanting ions into the first plurality of regions 420 (which may including passive regions). Although not shown in FIG. 7A , ions may be implanted into the second plurality of regions 422 in the donor structure 400 through the vias in the patterned mask, as previously described herein.

Referring to FIG. 7B, after the first selective non-uniform ion implantation process, additional ions may be implanted through the first plurality of regions 420 using a second selective non-uniform ion implantation process without adding additional ions. Ions are implanted through the second plurality of regions 422 . Ions may be implanted into donor structure 400 through vias 418 in patterned mask 416 as previously described herein. The ions of the second ion implantation treatment may be of the same elemental composition or of a different elemental composition relative to the ions of the first ion implantation treatment. As a result, additional defects 409 are formed along the ion-implanted facet 406 in the first plurality of regions 420 , while such additional defects are not formed in the second plurality of regions 422 . The second plurality of defects 409 may be more extensive and/or more pronounced relative to the first plurality of defects 408 such that a weakened region is defined along the ion-implanted face 406 in the first plurality of regions 420 than in the second plurality of regions. The ones in 422 are relatively weaker (more prone to breaking).

As shown in FIG. 7B , a plurality of recesses 412 may optionally be formed in the first major surface 404A of the donor structure 400 using, for example, a masking and etching process as previously described. Ions may be implanted through the recesses 412 into the first plurality of regions 420 (shown in FIG. 7B ) in the manner previously described with reference to FIG. 2A . In other embodiments, a dielectric material may be provided in the recess 412 prior to the second ion implantation process, and ions may be implanted through the dielectric material in the recess 412 in the manner previously described with reference to FIG. 3B . As described in previous embodiments, the first selective non-uniform ion implantation process and the second non-uniform ion implantation process may result in ions being concentrated at a single implant face 409 in the donor structure 400 . In other words, the first selective non-uniform ion implantation and the second non-uniform ion implantation may be implanted to substantially the same depth in the donor structure 400 .

After the second ion implantation process, other processes may be performed to transfer the material layer 410 to the acceptor structure using methods as previously described herein with reference to FIGS. 2C-2G .

In any of the methods described herein in which ions are implanted through the recesses into the donor structure, a dielectric sidewall spacer may optionally be provided in the recesses within the donor structure prior to implanting the ions through the recesses into the donor structure, In an effort to prevent stray ions from entering into regions of the donor structure laterally adjacent to the recess. An example embodiment of such a method is described below with reference to FIGS. 8A-8E .

Referring to Figure 8A, a donor structure 500 is shown. Donor structure 500 is similar to donor structure 150 of FIG. 2A and includes a plurality of recesses 564 that have been formed in bulk material 552 of donor structure 500 through vias 566 in patterned mask 568 . Patterned mask 568 may include, for example, a layer of a nitride material such as silicon nitride (Si ₃ N ₄ ). The bulk material 552 may have a first major surface 554A and an opposing second major surface 554B. As shown in FIG. 8A , a recess 564 may be formed in first major surface 554 .

Referring to FIG. 8B , after the recess 564 is formed, one or more co- shape material layer. The one or more conformal material layers may include, for example, one or more layers of dielectric material. For example, a first conformal layer 569A may be deposited on the exposed surface of bulk material 552 in mask 568 and recess 564, and a second conformal layer 569B may be deposited on first conformal layer 569A, as Figure 8B. The second conformal layer 569B may have a different material composition than that of the first conformal layer 569A, thereby allowing the second conformal layer 569B to be selectively etched without etching the first conformal layer 569A, as discussed below. As a non-limiting example, the first conformal layer 569A may include, for example, an oxide material such as silicon oxide (SiO ₂ ), and the second conformal layer 569B may include, for example, a nitride material such as silicon nitride (Si ₃ N ₄ )).

As shown in FIG. 8C, the second conformal layer 569B, which may include nitride, may be etched using an anisotropic etch process, thereby removing laterally extending regions of the second conformal layer 569B without substantially removing the second conformal layer. Vertically extending area of 569B. Thus, as shown in FIG. 8C , only the regions of the second conformal layer 569B disposed on the lateral sidewalls in the recess 564 remain, and the first first conformal layer is exposed on the bottom surface within the recess 564 and on the main surface 554A of the donor structure 550. Conformal layer 569A. By way of example and not limitation, the second conformal layer 569B may be anisotropically etched using a dry plasma etch process, such as a reactive ion etch (RIE) process.

After the second conformal layer 569B is anisotropically etched, another etch process may be used to remove portions of the first conformal layer 569A (which may include oxide) exposed at the bottom surface of the recess 564 . For example, a wet chemical etch process may be used to etch the exposed regions of the first conformal layer 569A, resulting in the structure shown in FIG. 8D. The etch process may also remove regions of the first conformal layer 569A covering the first major surface 554A of the donor structure 550 . As shown in FIG. 8D , bulk material 552 is exposed at the bottom of recess 564 . While bulk material 552 is exposed at the bottom of recess 564 , as shown in FIG. 8D , spacer structure 574 may remain on the lateral sidewalls within recess 564 . These spacer structures 574 may include portions of one or more conformal layers 569A, 569B.

Accordingly, after the bulk material 552 is exposed at the bottom of the recess 564 , a plurality of ions may be implanted into the donor structure 550 along the ion implantation face 556 . Ions may be non-uniformly implanted into the donor structure 550 such that defects are formed in the first plurality of regions 570 (which may include inactive regions) while ions are not implanted in the second plurality of regions 572 (which may include active region). During an ion implantation process, the spacer structure 574 may also prevent ions from entering the active region 572 of the material layer 560 to be transferred through the sidewalls in the recess 564 . The ion implantation facet 556 shown in FIG. 8D may comprise a single implantation facet, where the majority of ions are disposed in the donor structure 550 along a single facet. In other words, most of the implanted ions are concentrated at a single depth in the donor structure 550 .

Referring to FIG. 8E , the implanted ions may result in the formation of defects 558 along the ion-implanted face 556 in the first plurality of regions 570 . Following the ion implantation process, one or more conformal layers 569A, 569B (eg, spacer structures 574 ) and mask 568 (FIG. 8D) to form the structure shown in FIG. 8E. The structure shown in Figure 8E is generally similar to the structure shown in Figure 2B, and can also be further processed as previously described herein with reference to Figures 2C-2G. Spacer structures (like the ones in FIG. spacer structure 574).

Claims (15)

1. A method of transferring a layer of semiconductor material from a first donor structure to a second structure, the method comprising the steps of: Implanting ions into the first donor structure to form a substantially planar weakened region within the first donor structure defined by the implanted ions, the substantially planar region of weakness separating the semiconductor material layer of the first donor structure from the second separation of the remainder of a donor structure wherein at least one of the concentration of the implanted ions and the elemental composition of the implanted ions is along at least one direction parallel to the substantially planar region of weakness across the substantially planar region of weakness up change; bonding the first donor structure to the second structure; and The first donor structure is fractured along the substantially planar weakened region, leaving the layer of semiconductor material bonded to the second structure. 2. The method of claim 1, wherein implanting ions into the first donor structure to form the substantially planar weakened region comprises: implanting a relatively high concentration of ions into a first donor structure through a first plurality of regions of the layer of semiconductor material; and A relatively low concentration of ions is implanted into the first donor structure through the second plurality of regions of the layer of semiconductor material. 3. The method according to claim 2, further comprising the steps of: selecting the first plurality of regions of the layer of semiconductor material to include inactive regions of the layer of semiconductor material; and The second plurality of regions of the layer of semiconductor material is selected to include active regions of the layer of semiconductor material. 4. The method of claim 1, wherein the step of implanting ions into the first donor structure to form a substantially planar weakened region comprises: implanting ions of a first elemental composition into a first donor structure through a first plurality of regions of the layer of semiconductor material; and Ions of a second different elemental composition are implanted into the first donor structure through a second plurality of regions of the layer of semiconductor material. 5. The method according to claim 4, further comprising the steps of: selecting the first plurality of regions of the layer of semiconductor material to include inactive regions of the layer of semiconductor material; and The second plurality of regions of the layer of semiconductor material is selected to include active regions of the layer of semiconductor material. 6. The method of claim 1, wherein implanting ions into the first donor structure comprises implanting ions into the first donor structure through vias in a patterned mask. 7. The method of claim 1, further comprising the steps of: forming a recess in a major surface of the first donor structure prior to implanting ions into the first donor structure; and Wherein, the step of implanting ions into the first donor structure comprises implanting ions into the first donor structure through the surface of the first donor structure in the recess without implanting the ions into non-recessed portions of the main surface of the first donor structure in the area. 8. The method of claim 1, wherein the step of implanting ions into the first donor structure comprises: performing an ion implantation process to implant a first amount of ions into the first donor structure at a substantially uniform concentration throughout the first donor structure within the substantially planar weakened region; and A further ion implantation process is performed to implant a second amount of ions into the first donor structure at varying concentrations across the first donor structure within the substantially planar weakened region. 9. The method of claim 8, further comprising the steps of: forming a recess in a major surface of the first donor structure after performing the one ion implantation process to implant the first amount of ions into the first donor structure; and Wherein, the step of performing another ion implantation process includes implanting the second amount of ions into the first donor structure through the surface of the first donor structure in the recess without implanting the second amount of ions into the first donor structure. In the non-recessed region of the major surface of the first donor structure. 10. A semiconductor structure comprising: a first donor structure having therein a substantially planar region of weakness defined by ions implanted within the first donor structure along the substantially planar region of weakness, the substantially planar region of weakness defined by a substantially planar weakened region separating the semiconductor material layer of the first donor structure from the remainder of the first donor structure, at least one of the concentration of the implanted ions and the elemental composition of the implanted ions being maintained throughout the substantially planar weakened region the zone varies along at least one direction parallel to said generally planar zone of weakness; and A second structure bonded to the layer of semiconductor material of the first donor structure. 11. The semiconductor structure of claim 10 , wherein the substantially planar weakened region comprises a first plurality of regions having a first concentration of implanted ions therein and regions having a second concentration of implanted ions therein. In the second plurality of regions, the second concentration is higher than the first concentration. 12. The semiconductor structure of claim 10, wherein the substantially planar weakened region comprises: a first plurality of regions in which implanted ions have a first elemental composition; and a second plurality of regions in which implanted The ions of have a second elemental composition different from said first elemental composition. 13. The semiconductor structure of claim 10, further comprising: a recess in the first donor structure, wherein in a region within the generally planar weakened region vertically above the recess , the concentration of the implanted ions and the concentration of the implanted ions relative to the region within the first donor structure in the vertical direction within the substantially planar weakened region laterally above the spaces between the recesses At least one of the elemental components is different. 14. The semiconductor structure of claim 13, further comprising spacer structures on lateral sidewalls within the recess. 15. The semiconductor structure of claim 10, further comprising at least one ion confinement layer within the first donor structure extending substantially parallel to the substantially planar weakened region.

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