CN103824939A - Polymer solar cell and preparation method thereof - Google Patents
Polymer solar cell and preparation method thereof Download PDFInfo
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- CN103824939A CN103824939A CN201210468064.5A CN201210468064A CN103824939A CN 103824939 A CN103824939 A CN 103824939A CN 201210468064 A CN201210468064 A CN 201210468064A CN 103824939 A CN103824939 A CN 103824939A
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- 229920000642 polymer Polymers 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 27
- 229920006389 polyphenyl polymer Polymers 0.000 claims abstract description 25
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims description 74
- 238000004528 spin coating Methods 0.000 claims description 51
- LWGKBODJSZZWHB-UHFFFAOYSA-N ethene thiophene Chemical compound S1C=CC=C1.C=C.C=C LWGKBODJSZZWHB-UHFFFAOYSA-N 0.000 claims description 31
- 238000001704 evaporation Methods 0.000 claims description 26
- 230000008020 evaporation Effects 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 21
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims description 16
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical class [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 11
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 9
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 6
- AYTVLULEEPNWAX-UHFFFAOYSA-N cesium;azide Chemical group [Cs+].[N-]=[N+]=[N-] AYTVLULEEPNWAX-UHFFFAOYSA-N 0.000 claims description 5
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 claims description 5
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001942 caesium oxide Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000005036 potential barrier Methods 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 abstract 1
- 150000001663 caesium Chemical class 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 211
- 229920000144 PEDOT:PSS Polymers 0.000 description 43
- 229920000264 poly(3',7'-dimethyloctyloxy phenylene vinylene) Polymers 0.000 description 22
- 238000000034 method Methods 0.000 description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000007738 vacuum evaporation Methods 0.000 description 10
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 239000003599 detergent Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000075 oxide glass Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MVPPADPHJFYWMZ-IDEBNGHGSA-N chlorobenzene Chemical group Cl[13C]1=[13CH][13CH]=[13CH][13CH]=[13CH]1 MVPPADPHJFYWMZ-IDEBNGHGSA-N 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
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- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The embodiment of the invention discloses a polymer solar cell comprising an anode substrate, an active layer, an electron buffer layer and a cathode. The polymer solar cell also comprises a quantum well layer which is formed between the anode substrate and the active layer. The quantum well layer comprises n potential barrier layers which are laminated in turn and n-1 potential well layers which are arranged between two adjacent potential barrier layers, wherein n is an integer which is greater than 1 and less than or equal to 6. The material of the potential barrier layers is the mixed material formed by poly 3,4-ethylene dioxythiophene and polyphenyl sulfonate. The material of the potential well layers is caesium salt with a work function of -3.0-2.0V. Besides, the embodiment of the invention also discloses a preparation method of the polymer solar cell. According to the polymer solar cell, hole transmission rate is regulated and controlled so that recombination rate of holes and electrons is effectively enhanced and an objective of enhancing photoelectric conversion efficiency is finally achieved.
Description
Technical field
The present invention relates to area of solar cell, relate in particular to a kind of polymer solar battery and preparation method thereof.
Background technology
Nineteen eighty-two, Weinberger etc. have studied the Photovoltaic Properties of polyacetylene, produced first and had solar cell truly, but photoelectric conversion efficiency is at that time extremely low by (10
-3%).And then, Glenis etc. have made the solar cell of various polythiophenes, and the problem all facing is at that time extremely low open circuit voltage and photoelectric conversion efficiency.Until 1986, C.W.Tang etc. are incorporated into p-type semiconductor and N-shaped semiconductor in double-deck device first, just make photoelectric current obtain the raising of very big degree, and from then on, take this work as milestone, organic polymer solar cell is flourish.
The operation principle of polymer solar battery is mainly divided into four parts: the formation of (1) optical excitation and exciton; (2) diffusion of exciton; (3) division of exciton; (4) transmission of electric charge and collection.First, conjugated polymer absorbs photon under incident light irradiates, electronics transits to lowest unoccupied molecular orbital (LUMO) from polymer highest occupied molecular orbital (HOMO), form exciton, exciton is diffused into body/acceptor interface and is separated into the electronics and the hole that move freely under the effect of internal electric field, then electronics transmits and is collected by negative electrode in mutually at acceptor, and hole is by body phase and collected by anode, thereby produces photoelectric current.This has just formed an effective photoelectric conversion process.
Wherein, exciton dissociation speed is a key factor that affects conversion efficiency, and general hole transport speed ratio electric transmission speed is wanted high two orders of magnitude.Not mating of transmission rate is an important reason that causes photoelectric conversion efficiency low.
Summary of the invention
Given this, the embodiment of the present invention aims to provide a kind of polymer solar battery and preparation method thereof, by prepare quantum well layer between active layer and anode substrate, regulate the transmission rate in hole, speed and the electric transmission speed in hole are matched, the efficiency that makes electrode collect hole and electronics matches, and then improves photoelectric conversion efficiency.
The embodiment of the present invention provides a kind of polymer solar battery, comprise anode substrate, active layer, electron buffer layer and negative electrode, described polymer solar battery also comprises the quantum well layer being formed between described anode substrate and described active layer, described quantum well layer comprises that barrier layer that n stacks gradually and n-1 are arranged at the potential well layer between adjacent two barrier layers, described n is greater than 1 and be less than or equal to 6 integer, the material of described barrier layer is poly-3, the composite material that 4-dioxy ethene thiophene and polyphenyl sulfonate form, the material of described potential well layer is that work function is the cesium salt of-3.0 ~ 2.0eV.
Described n is greater than 1 and be less than or equal to 6 integer.
In the time of n=2, the structure of quantum well layer is: barrier layer/potential well layer/barrier layer.
In the time of n=3, the structure of quantum well layer is: barrier layer/potential well layer/barrier layer/potential well layer/barrier layer.
Excessive when the value of n, can make the thickness of quantum well layer excessive, thereby affect the effect of hole transport, be unfavorable for improving photoelectric conversion efficiency, therefore n should get suitable value, in the present invention, 1 < n≤6, n is integer.
The material of described barrier layer is the composite material of poly-3,4-dioxy ethene thiophene and the formation of polyphenyl sulfonate.Preferably, the weight ratio of described poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate is 2 ~ 6:1.
The material of described potential well layer is that work function is the cesium salt of-3.0 ~ 2.0eV.Preferably, described cesium salt is cesium azide (CsN
3), cesium carbonate (Cs
2cO
3), cesium chloride (CsCl) or cesium oxide (Cs
2o).
Preferably, the thickness of described potential well layer is 10 ~ 50nm/ layer, and the thickness of described barrier layer is 10 ~ 50nm/ layer.
The present invention adopts the material poly-3 with cavity transmission ability, 4-dioxy ethene thiophene (PEDOT) is as the barrier layer material of quantum well, can improve hole transport speed, the time that makes hole arrive anode shortens greatly, and polyphenyl sulfonate (PSS) can increase water-soluble and conductivity, be conducive to hole transport and spin coating proceeding.And adopt work function at the cesium salt of-3.0 ~ 2.0eV the potential well as quantum well, can effectively limit the transmission in hole, suitable reduction hole transport speed, finally make the transmission rate of hole and electronics reach consistent, thereby improve luminescent conversion efficiency, in the time that hole arrives potential barrier, due to the PEDOT of barrier material employing, therefore, can accelerate not have the transmission rate in confined part hole, effectively reduce hole and run into the probability of trap cancellation.
Preferably, described anode substrate is indium tin oxide glass (ITO), fluorine doped tin oxide glass (FTO), mixes the zinc oxide glass (AZO) of aluminium or mix the zinc oxide glass (IZO) of indium.
Preferably, described active layer is for poly-[2-methoxyl group-5-(2-ethyl hexyl oxy)] is to phenylacetylene (MDMO-PPV) or poly-(2-methoxyl group-5-(2-ethyl hexyl oxy)-1,4-phenylene ethylene) (MEH-PPV) with [6,6]-phenyl-C61-methyl butyrate (PC
61bM) composite material forming.Described active layer can be used respectively MDMO-PPV:PC
61bM, MEH-PPV:PC
61bM represents.More preferably, described active layer is MDMO-PPV and PC
61the composite material that BM forms.
Preferably, described MDMO-PPV or MEH-PPV and PC
61the mass ratio of BM is 1:1 ~ 1:4.More preferably, described MDMO-PPV or MEH-PPV and PC
61the mass ratio of BM is 1:3.
Preferably, the thickness of described active layer is 80 ~ 300nm.More preferably, the thickness of described active layer is 200nm.
Preferably, the material of described electron buffer layer is lithium fluoride (LiF), lithium carbonate (Li
2cO
3) or cesium carbonate (Cs
2cO
3).More preferably, the material of described electron buffer layer is lithium fluoride (LiF).
Preferably, the thickness of described electron buffer layer is 0.5 ~ 10nm.More preferably, the thickness of described electron buffer layer is 0.7nm.
Preferably, described negative electrode is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).More preferably, described negative electrode is aluminium (Al).
Preferably, the thickness of described negative electrode is 80 ~ 200nm.More preferably, the thickness of described negative electrode is 150nm.
In the time of n=2, the structure of the polymer solar battery that the embodiment of the present invention provides is: anode/barrier layer/potential well layer/barrier layer/active layer/electron buffer layer/negative electrode.
Correspondingly, the embodiment of the present invention also provides a kind of preparation method of polymer solar battery, comprises the following steps:
Clean anode substrate is provided;
In described anode substrate, quantum well layer is prepared in spin coating, first in described anode substrate, barrier layer is prepared in spin coating, on described barrier layer, potential well layer is prepared in spin coating again, prepare according to this barrier layer that n stacks gradually and n-1 and be arranged at the potential well layer between adjacent two barrier layers, described n is greater than 1 and be less than or equal to 6 integer, the material of described barrier layer is poly-3, the composite material that 4-dioxy ethene thiophene and polyphenyl sulfonate form, the material of described potential well layer is that work function is the cesium salt of-3.0 ~ 2.0V;
On described quantum well layer, active layer is prepared in spin coating, then on described active layer successively evaporation prepare electron buffer layer and negative electrode, obtain polymer solar battery.
Described n is greater than 1 and be less than or equal to 6 integer.
In the time of n=2, the structure of quantum well layer is: barrier layer/potential well layer/barrier layer.
In the time of n=3, the structure of quantum well layer is: barrier layer/potential well layer/barrier layer/potential well layer/barrier layer.
Excessive when the value of n, can make the thickness of quantum well layer excessive, thereby affect the effect of hole transport, be unfavorable for improving photoelectric conversion efficiency, therefore n should get suitable value, in the present invention, 1 < n≤6, n is integer.
The material of described barrier layer is the composite material of poly-3,4-dioxy ethene thiophene and the formation of polyphenyl sulfonate.Preferably, the weight ratio of described poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate is 2 ~ 6:1.
The material of described potential well layer is that work function is the cesium salt of-3.0 ~ 2.0eV.Preferably, described cesium salt is cesium azide (CsN
3), cesium carbonate (Cs
2cO
3), cesium chloride (CsCl) or cesium oxide (Cs
2o).
Being operating as of barrier layer prepared in described spin coating: will gather 3, what the mass fraction of 4-dioxy ethene thiophene was 1 ~ 5% gathers 3,4-dioxy ethene thiophene (PEDOT): polyphenyl sulfonate (PSS) aqueous solution is spin-coated in anode substrate, and heats 15 ~ 60min at 100 ~ 200 ℃.
Preferably, the weight ratio of described poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate is 2 ~ 6:1.
Preferably, the speed of described spin coating is 2000 ~ 6000rpm, and the time is 5 ~ 30s.
Being operating as of potential well layer prepared in described spin coating: the cellosolvo solution of the cesium salt that is 0.5 ~ 30% by mass fraction is spin-coated on barrier layer, and heats 5 ~ 30min at 50 ~ 100 ℃.
Preferably, the speed of described spin coating is 2000 ~ 8000rpm, and the time is 5 ~ 60s.
Preferably, the thickness of described potential well layer is 10 ~ 50nm/ layer, and the thickness of described barrier layer is 10 ~ 50nm/ layer.
Preferably, described anode substrate is indium tin oxide glass (ITO), fluorine doped tin oxide glass (FTO), mixes the zinc oxide glass (AZO) of aluminium or mix the zinc oxide glass (IZO) of indium.
The clean operation of anode substrate is: anode substrate is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol.The organic pollution of removing glass surface, carries out oxygen plasma treatment or UV-ozone treatment after cleaning up.Wherein the oxygen plasma treatment time is 5 ~ 15min, and power is 10 ~ 50W; The UV-ozone treatment time is 5 ~ 20min.Level and smooth anode substrate surface after above-mentioned processing, strengthens anode substrate evenness, improves work function (approximately improving 0.1 ~ 0.3eV).
Preferably, described active layer is MDMO-PPV or MEH-PPV and [6,6]-phenyl-C61-methyl butyrate (PC
61bM) composite material forming.Described active layer is used respectively MDMO-PPV:PC
61bM, MEH-PPV:PC
61bM represents.More preferably, described active layer is MDMO-PPV and PC
61the composite material that BM forms.
The concrete operations that active layer is prepared in described spin coating are: in the glove box that is full of inert gas, and the MDMO-PPV:PC that is 8 ~ 30mg/mL by total concentration of solutes
61bM or MEH-PPV:PC
61bM solution is spin-coated on quantum well layer, and the 5 ~ 100min or at room temperature place 24 ~ 48 hours of annealing at 50 ~ 200 ℃.
Preferably, described spin speed is 4000 ~ 6000rpm, and the time is 5 ~ 30s.
Preferably, described MDMO-PPV:PC
61bM or MEH-PPV:PC
61the total concentration of solutes of BM solution is 18mg/mL.
Preferably, described MDMO-PPV or MEH-PPV and PC
61the mass ratio of BM is 1:1 ~ 1:4.More preferably, described MDMO-PPV or MEH-PPV and PC
61the mass ratio of BM is 1:3.
Preferably, described MDMO-PPV:PC
61bM or MEH-PPV:PC
61the solvent of BM solution is toluene, dimethylbenzene, chlorobenzene or chloroform.
Preferably, the thickness of described active layer is 80 ~ 300nm.More preferably, the thickness of described active layer is 200nm.
When quantum well layer structure is to be greater than multicycle of 1 when structure, in anode substrate, spin coating is prepared the detailed process of quantum well layer and is: first in anode substrate, the first barrier layer is prepared in spin coating, on the first barrier layer, the first potential well layer is prepared in spin coating again, on the first potential well layer, the second barrier layer is prepared in spin coating again, on the second barrier layer, the second potential well layer is prepared in spin coating, prepare according to this barrier layer that n stacks gradually and n-1 and be arranged at the potential well layer between adjacent two barrier layers, finally on n barrier layer, active layer is prepared in spin coating.
Preferably, the material of described electron buffer layer is lithium fluoride (LiF), lithium carbonate (Li
2cO
3) or cesium carbonate (Cs
2cO
3).More preferably, the material of described electron buffer layer is lithium fluoride (LiF).
Preferably, the evaporation of described electron buffer layer is vacuum evaporation, and evaporation temperature is 100 ~ 500 ℃, and vacuum degree is 1 × 10
-31 × 10
-5pa.
Preferably, the thickness of described electron buffer layer is 0.5 ~ 10nm.More preferably, the thickness of described electron buffer layer is 0.7nm.
Preferably, described negative electrode is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).More preferably, described negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 80 ~ 200nm.More preferably, the thickness of negative electrode is 150nm.
Preferably, the evaporation of negative electrode is vacuum evaporation, and evaporation temperature is 500 ~ 1000 ℃, and vacuum degree is 1 × 10
-31 × 10
-5pa.
Implement the embodiment of the present invention, there is following beneficial effect:
(1) polymer solar battery of containing quantum trap layer provided by the invention, the potential barrier of its quantum well adopts poly-3, the composite material that 4-dioxy ethene thiophene and polyphenyl sulfonate form, poly-3,4-dioxy ethene thiophene has cavity transmission ability, can improve hole transport speed, and the time that makes hole arrive anode shortens greatly, and polyphenyl sulfonate can increase water-soluble and conductivity, be conducive to hole transport and spin coating proceeding;
(2) polymer solar battery of containing quantum trap layer provided by the invention, the potential well of its quantum well adopts the cesium salt of work function at-3.0 ~ 2.0eV, can effectively limit the transmission in hole, suitable reduction hole transport speed, finally make the transmission rate of hole and electronics reach consistent, thereby improve photoelectric conversion efficiency; When hole arrives when potential barrier, due to poly-3, the 4-dioxy ethene thiophene that barrier material adopts, therefore, can accelerate not have the transmission rate in confined part hole, effectively reduce hole and run into the probability of trap cancellation.
Accompanying drawing explanation
Fig. 1 is the structure chart of the polymer solar battery that provides of the embodiment of the present invention 1;
Fig. 2 is polymer solar battery and the current density of existing polymer solar battery and the graph of a relation of voltage that the embodiment of the present invention 1 provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A preparation method for polymer solar battery, comprises the following steps:
(1) ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carries out oxygen plasma treatment to the anode substrate after cleaning up, processing time is 5min, and power is 30W;
(2) in the anode substrate of processing through (1), quantum well layer is prepared in spin coating: first will gather 3,4-dioxy ethene thiophene (PEDOT): polyphenyl sulfonate (PSS) aqueous solution is spin-coated in anode substrate, and heat 30min at 150 ℃, obtain the first barrier layer, wherein, poly-3, the weight ratio of 4-dioxy ethene thiophene and polyphenyl sulfonate is 5:1, and in solution, the mass fraction of poly-3,4-dioxy ethene thiophene is 3.5%, speed in spin coating process is 4000rpm, and the time is 15s; Spin coating the first potential well layer on this first barrier layer again, the cesium carbonate (Cs that is 1.5% by mass fraction
2cO
3) cellosolvo solution be spin-coated on the first barrier layer, and heat 10min at 70 ℃, obtain the first potential well layer, the speed in spin coating process is 4000rpm, the time is 30s; And adopt according to this same procedure spin coating to prepare the second barrier layer, the second potential well layer, the 3rd barrier layer, obtain quantum well layer;
This quantum well layer comprises three layers of barrier layer (PEDOT:PSS) and two-layer potential well layer (Cs
2cO
3), concrete structure is: PEDOT:PSS/Cs
2cO
3/ PEDOT:PSS/Cs
2cO
3/ PEDOT:PSS(n=3), the thickness in monolayer of barrier layer (PEDOT:PSS) is 15nm, potential well layer (Cs
2cO
3) thickness in monolayer be 20nm;
(3) on quantum well layer, active layer is prepared in spin coating: in the glove box that is full of argon gas, and the MDMO-PPV:PC that is 18mg/mL by total concentration of solutes
61bM solution is spin-coated on quantum well layer, and the 5min that anneals at 200 ℃, obtains the active layer that thickness is 200nm; Wherein, MDMO-PPV:PC
61mDMO-PPV and PC in BM solution
61the mass ratio of BM is 1:3, and solvent is chlorobenzene; Speed in spin coating process is 4500rpm, and the time is 10s;
(4) on active layer, evaporation is prepared electron buffer layer and negative electrode successively, obtains polymer solar battery.The evaporation of electron buffer layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 × 10
-5pa.The evaporation of negative electrode is vacuum evaporation, and evaporation temperature is 800 ℃, and vacuum degree is 1 × 10
-4pa.
Wherein, the material of electron buffer layer is lithium fluoride (LiF), and thickness is 0.7nm; Negative electrode is aluminium (Al), and thickness is 150nm.
Fig. 1 is the structural representation of the polymer solar battery of the present embodiment.As shown in Figure 1, the structure of this polymer solar battery comprises, anode conducting substrate 10, quantum well layer 20, active layer 30, electron buffer layer 40 and negative electrode 50.Wherein, quantum well layer 20, comprises three layers of barrier layer (PEDOT:PSS) 21 and two-layer potential well layer (Cs
2cO
3) 22, its structure is PEDOT:PSS/Cs
2cO
3/ PEDOT:PSS/Cs
2cO
3/ PEDOT:PSS.The structure of this polymer solar battery is: ito glass/PEDOT:PSS/Cs
2cO
3/ PEDOT:PSS/Cs
2cO
3/ PEDOT:PSS/MDMO-PPV:PC
61bM/LiF/Al.
Fig. 2 is the graph of a relation of the polymer solar battery of the present embodiment and the current density of existing polymer solar battery and voltage.Wherein, curve 1 is the current density of the present embodiment polymer solar battery and the graph of a relation of voltage; The current density that curve 2 is existing polymer solar battery and the graph of a relation of voltage.Wherein, the structure of existing polymer solar battery is: ITO/PEDOT:PSS/MDMO-PPV:PC
61bM/LiF/Al.
As can see from Figure 2, under different voltage, all large than existing polymer solar battery of the current density of the present embodiment polymer solar battery, wherein, under 0V voltage, the current density of the present embodiment polymer solar battery is 18.95mA/cm
2, the current density of existing polymer solar battery is 12.41mA/cm
2.This explanation, the present invention prepares quantum well between active layer and anode, can effectively regulate the transmission rate in hole, the efficiency that makes electrode collect hole and electronics matches, cesium salt can effectively limit the transmission in hole as potential well, suitable reduction hole transport speed, finally make the transmission rate of hole and electronics reach consistent, thereby enhancing photoelectric conversion efficiency, the energy conversion efficiency of existing polymer solar battery is 2.88%, and the energy conversion efficiency of the polymer solar battery of the present embodiment is 4.63%.
Embodiment 2
A preparation method for polymer solar battery, comprises the following steps:
(1) IZO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carries out oxygen plasma treatment to the anode conducting substrate after cleaning up, processing time is 5min, and power is 30W;
(2) in the anode substrate of processing through (1), quantum well layer is prepared in spin coating: first will gather 3,4-dioxy ethene thiophene (PEDOT): polyphenyl sulfonate (PSS) aqueous solution is spin-coated in anode substrate, and heat 60min at 100 ℃, obtain the first barrier layer, wherein, poly-3, the weight ratio of 4-dioxy ethene thiophene and polyphenyl sulfonate is 6:1, and in solution, the mass fraction of poly-3,4-dioxy ethene thiophene is 1%, speed in spin coating process is 6000rpm, and the time is 30s; Spin coating the first potential well layer on this first barrier layer again, the cesium azide (CsN that is 30% by mass fraction
3) cellosolvo solution be spin-coated on the first barrier layer, and heat 30min at 100 ℃, obtain the first potential well layer, the speed in spin coating process is 2000rpm, the time is 5s; And adopt according to this same procedure spin coating prepare second, third, the 4th, the 5th, the 6th barrier layer and second, third, the 4th, the 5th potential well layer, obtain quantum well layer;
This quantum well layer comprises six layers of barrier layer (PEDOT:PSS) and five layers of potential well layer (CsN
3), concrete structure is: PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS(n=6), the thickness in monolayer of barrier layer (PEDOT:PSS) is 10nm, potential well layer (CsN
3) thickness in monolayer be 10nm;
(3) on quantum well layer, active layer is prepared in spin coating: in the glove box that is full of argon gas, and the MDMO-PPV:PC that is 24mg/mL by total concentration of solutes
61bM solution is spin-coated on quantum well layer, and at room temperature places 24 hours, obtains the active layer that thickness is 160nm; Wherein, MDMO-PPV:PC
61mDMO-PPV and PC in BM solution
61the mass ratio of BM is 1:3, and solvent is chloroform; Speed in spin coating process is 4000rpm, and the time is 30s;
(4) on active layer, evaporation is prepared electron buffer layer and negative electrode successively, obtains polymer solar battery.The evaporation of electron buffer layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 × 10
-5pa.The evaporation of negative electrode is vacuum evaporation, and evaporation temperature is 800 ℃, and vacuum degree is 1 × 10
-4pa.
Wherein, the material of electron buffer layer is cesium carbonate (Cs
2cO
3), thickness is 0.5nm; Negative electrode is silver (Ag), and thickness is 200nm.
The structure of the polymer solar battery that the present embodiment provides is: IZO glass/PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/CsN
3/ PEDOT:PSS/MDMO-PPV:PC
61bM/Cs
2cO
3/ Ag.
Embodiment 3
A preparation method for polymer solar battery, comprises the following steps:
(1) FTO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carries out oxygen plasma treatment to the anode substrate after cleaning up, processing time is 5min, and power is 30W;
(2) in the anode substrate of processing through (1), quantum well layer is prepared in spin coating: first will gather 3,4-dioxy ethene thiophene (PEDOT): polyphenyl sulfonate (PSS) aqueous solution is spin-coated in anode substrate, and heat 15min at 100 ℃, obtain the first barrier layer, wherein, poly-3, the weight ratio of 4-dioxy ethene thiophene and polyphenyl sulfonate is 2:1, and in solution, the mass fraction of poly-3,4-dioxy ethene thiophene is 5%, speed in spin coating process is 2000rpm, and the time is 5s; Spin coating the first potential well layer on this first barrier layer again, the cesium oxide (Cs that is 0.5% by mass fraction
2o) cellosolvo solution is spin-coated on the first barrier layer, and heats 30min at 50 ℃, obtains the first potential well layer, and the speed in spin coating process is 8000rpm, and the time is 60s; And on the first potential well layer, adopt same procedure spin coating to prepare the second barrier layer, obtain quantum well layer;
This quantum well layer comprises six layers of barrier layer (PEDOT:PSS) and five layers of potential well layer (Cs
2o), concrete structure is: PEDOT:PSS/Cs
2o/PEDOT:PSS(n=2), the thickness in monolayer of barrier layer (PEDOT:PSS) is 50nm, potential well layer (Cs
2o) thickness in monolayer is 40nm;
(3) on quantum well layer, active layer is prepared in spin coating: in the glove box that is full of argon gas, and the MEH-PPV:PC that is 12mg/mL by total concentration of solutes
61bM solution is spin-coated on quantum well layer, and the 100min that anneals at 100 ℃, obtains the active layer that thickness is 200nm; Wherein, MEH-PPV:PC
61mEH-PPV and PC in BM solution
61the mass ratio of BM is 1:4, and solvent is dimethylbenzene; Speed in spin coating process is 6000rpm, and the time is 5s;
(4) on active layer, evaporation is prepared electron buffer layer and negative electrode successively, obtains polymer solar battery.The evaporation of electron buffer layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 × 10
-5pa.The evaporation of negative electrode is vacuum evaporation, and evaporation temperature is 800 ℃, and vacuum degree is 1 × 10
-4pa.
Wherein, the material of electron buffer layer is lithium carbonate (Li
2cO
3), thickness is 5nm; Negative electrode is gold (Au), and thickness is 180nm.
The structure of the polymer solar battery that the present embodiment provides is: FTO glass/PEDOT:PSS/Cs
2o/PEDOT:PSS/MEH-PPV:PC
61bM/Li
2cO
3/ Au.
Embodiment 4
A preparation method for polymer solar battery, comprises the following steps:
(1) AZO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carries out oxygen plasma treatment to the anode substrate after cleaning up, processing time is 5min, and power is 30W;
(2) in the anode substrate of processing through (1), quantum well layer is prepared in spin coating: first will gather 3,4-dioxy ethene thiophene (PEDOT): polyphenyl sulfonate (PSS) aqueous solution is spin-coated in anode substrate, and heat 20min at 120 ℃, obtain the first barrier layer, wherein, poly-3, the weight ratio of 4-dioxy ethene thiophene and polyphenyl sulfonate is 4:1, and in solution, the mass fraction of poly-3,4-dioxy ethene thiophene is 3%, speed in spin coating process is 3500rpm, and the time is 10s; Spin coating the first potential well layer on this first barrier layer again, the cellosolvo solution of the cesium chloride that is 4% by mass fraction (CsCl) is spin-coated on the first barrier layer, and heats 15min at 70 ℃, obtains the first potential well layer, speed in spin coating process is 5000rpm, and the time is 20s; And adopt according to this same procedure spin coating prepare second, third, the 4th barrier layer and second, third potential well layer, obtain quantum well layer;
This quantum well layer comprises four layers of barrier layer (PEDOT:PSS) and three layers of potential well layer (CsCl), concrete structure is: PEDOT:PSS/CsCl/PEDOT:PSS/CsCl/PEDOT:PSS/CsCl/PEDOT:PSS(n=4), the thickness in monolayer of barrier layer (PEDOT:PSS) is 25nm, and the thickness in monolayer of potential well layer (CsCl) is 50nm;
(3) on quantum well layer, active layer is prepared in spin coating: in the glove box that is full of argon gas, and the MDMO-PPV:PC that is 8mg/mL by total concentration of solutes
61bM solution is spin-coated on quantum well layer, and the 5min that anneals at 200 ℃, obtains the active layer that thickness is 300nm; Wherein, MDMO-PPV:PC
61mDMO-PPV and PC in BM solution
61the mass ratio of BM is 1:2, and solvent is toluene; Speed in spin coating process is 5500rpm, and the time is 20s;
(4) on active layer, evaporation is prepared electron buffer layer and negative electrode successively, obtains polymer solar battery.The evaporation of electron buffer layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 × 10
-5pa.The evaporation of negative electrode is vacuum evaporation, and evaporation temperature is 800 ℃, and vacuum degree is 1 × 10
-4pa.
Wherein, the material of electron buffer layer is cesium carbonate (Cs
2cO
3), thickness is 10nm; Negative electrode is platinum (Pt), and thickness is 80nm.
The structure of the polymer solar battery that the present embodiment provides is: AZO glass/PEDOT:PSS/CsCl/PEDOT:PSS/CsCl/PEDOT:PSS/CsCl/PEDOT:PSS/M DMO-PPV:PC
61bM/Cs
2cO
3/ Pt.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a polymer solar battery, comprise anode substrate, active layer, electron buffer layer and negative electrode, it is characterized in that, described polymer solar battery also comprises the quantum well layer being formed between described anode substrate and described active layer, described quantum well layer comprises that barrier layer that n stacks gradually and n-1 are arranged at the potential well layer between adjacent two barrier layers, described n is greater than 1 and be less than or equal to 6 integer, the material of described barrier layer is poly-3, the composite material that 4-dioxy ethene thiophene and polyphenyl sulfonate form, the material of described potential well layer is that work function is the cesium salt of-3.0 ~ 2.0eV.
2. polymer solar battery as claimed in claim 1, is characterized in that, described cesium salt is cesium azide, cesium carbonate, cesium chloride or cesium oxide.
3. polymer solar battery as claimed in claim 1, is characterized in that, the weight ratio of described poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate is 2 ~ 6:1.
4. polymer solar battery as claimed in claim 1, is characterized in that, the thickness of described potential well layer is 10 ~ 50nm/ layer, and the thickness of described barrier layer is 10 ~ 50nm/ layer.
5. a preparation method for polymer solar battery, is characterized in that, comprises the following steps:
Clean anode substrate is provided;
In described anode substrate, quantum well layer is prepared in spin coating, first in described anode substrate, barrier layer is prepared in spin coating, on described barrier layer, potential well layer is prepared in spin coating again, prepare according to this barrier layer that n stacks gradually and n-1 and be arranged at the potential well layer between adjacent two barrier layers, described n is greater than 1 and be less than or equal to 6 integer, the material of described barrier layer is poly-3, the composite material that 4-dioxy ethene thiophene and polyphenyl sulfonate form, the material of described potential well layer is that work function is the cesium salt of-3.0 ~ 2.0eV;
On described quantum well layer, active layer is prepared in spin coating, then on described active layer successively evaporation prepare electron buffer layer and negative electrode, obtain polymer solar battery.
6. the preparation method of polymer solar battery as claimed in claim 5, is characterized in that, described cesium salt is cesium azide, cesium carbonate, cesium chloride or cesium oxide.
7. the preparation method of polymer solar battery as claimed in claim 5, is characterized in that, the thickness of described potential well layer is 10 ~ 50nm/ layer, and the thickness of described barrier layer is 10 ~ 50nm/ layer.
8. the preparation method of polymer solar battery as claimed in claim 5, it is characterized in that, being operating as of barrier layer prepared in described spin coating: will gather 3, what the mass fraction of 4-dioxy ethene thiophene was 1 ~ 5% gathers 3,4-dioxy ethene thiophene: the polyphenyl sulfonate aqueous solution is spin-coated in described anode substrate, and heats 15 ~ 60min at 100 ~ 200 ℃.
9. the preparation method of polymer solar battery as claimed in claim 8, is characterized in that, the weight ratio of described poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate is 2 ~ 6:1.
10. the preparation method of polymer solar battery as claimed in claim 5, it is characterized in that, being operating as of potential well layer prepared in described spin coating: the cellosolvo solution of the cesium salt that is 0.5 ~ 30% by mass fraction is spin-coated on described barrier layer, and heats 5 ~ 30min at 50 ~ 100 ℃.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409412A (en) * | 2002-04-03 | 2003-04-09 | 清华大学 | Organic electroluminescence device using organic quantum trap as hole transmission layer |
| US20030211359A1 (en) * | 2000-03-30 | 2003-11-13 | O-Ok Park | Electroluminescent devices employing organic luminescent material/clay nanocomposites |
| CN1457105A (en) * | 2002-04-03 | 2003-11-19 | 清华大学 | Organic electroluminescent device |
| CN1812154A (en) * | 1998-08-19 | 2006-08-02 | 普林斯顿大学理事会 | Organic photosensitive optoelectronic device |
| CN102163696A (en) * | 2011-01-27 | 2011-08-24 | 电子科技大学 | Organic electroluminescent device taking quantum well structure as luminous layer |
| KR20120067158A (en) * | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | Quantum dot light emitting device |
-
2012
- 2012-11-19 CN CN201210468064.5A patent/CN103824939A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812154A (en) * | 1998-08-19 | 2006-08-02 | 普林斯顿大学理事会 | Organic photosensitive optoelectronic device |
| US20030211359A1 (en) * | 2000-03-30 | 2003-11-13 | O-Ok Park | Electroluminescent devices employing organic luminescent material/clay nanocomposites |
| CN1409412A (en) * | 2002-04-03 | 2003-04-09 | 清华大学 | Organic electroluminescence device using organic quantum trap as hole transmission layer |
| CN1457105A (en) * | 2002-04-03 | 2003-11-19 | 清华大学 | Organic electroluminescent device |
| KR20120067158A (en) * | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | Quantum dot light emitting device |
| CN102163696A (en) * | 2011-01-27 | 2011-08-24 | 电子科技大学 | Organic electroluminescent device taking quantum well structure as luminous layer |
Non-Patent Citations (1)
| Title |
|---|
| SEUNGUK NOH, ET AL.: "《Study of Buffer Layer Thickness on Bulk Heterojunction Solar Cell》", 《JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY》 * |
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