CN102856498B - Parallel type polymer solar cell and preparation method thereof - Google Patents
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Abstract
The invention belongs to the field of solar cells, and discloses a parallel type polymer solar cell. The parallel type polymer solar cell comprises an anode substrate, a first hole buffering layer, a first active layer, an n-type doped layer, a second active layer, a second hole buffering layer and an anode layer which are stacked sequentially. The active layers of two cell units can capture sunlight as much as possible, so that large quantities of electrons and holes are formed, a connecting layer for connecting two cells is the n-type doped layer capable of increasing conductivity of the cells, and hole and electron injection efficiency is improved.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a parallel polymer solar cell and a preparation method thereof.
Background
In 1982, Weinberger et al studied the photovoltaic properties of polyacetylene and produced the first solar cell in the real sense, but the current photoelectric conversion efficiency was extremely low (10)-3%). Next, Glenis et al, which have produced various polythiophene solar cells, have faced problems of extremely low open-circuit voltage and photoelectric conversion efficiency. Until 1986, c.w. tang et al introduced p-type and n-type semiconductors for the first time into a device of a two-layer structure, so that the photocurrent was greatly improved, and since this work was a milestone, organic polymer solar cells were developed vigorously.
Sariciftci et al, 1992, discovered that 2-methoxy-5- (2-ethyl-hexyloxy) -1, 4-phenylethyl (MEH-PPV) and complex system have a fast photoinduced electron transfer phenomenon, and attracted great interest, while in 1995, Yu et al used MEH-PPV and C60The derivative PCBM of (i.e. 60 carbon atoms organic) is mixed as an active layer to prepare the organic polymer body heterojunction solar cell. The device is at 20mW/cm2The energy conversion efficiency is 2.9% under the irradiation of monochromatic light with the wavelength of 430 nm. The solar cell is a bulk heterojunction solar cell prepared based on a polymer material and a PCBM receptor, and the concept of an interpenetrating network structure in a composite film is provided. Up to this point, the application of bulk heterojunction structures in polymer solar cells has been rapidly developed. The structure also becomes an organic polymer solar cell structure which is generally adopted by people at present.
The working principle of the polymer solar cell is mainly divided into four parts: (1) photoexcitation and exciton formation; (2) diffusion of excitons; (3) splitting of excitons; (4) and (4) transmission and collection of electric charges. First, a conjugated polymer absorbs photons under the irradiation of incident light, electrons transit from the Highest Occupied Molecular Orbital (HOMO) to the Lowest Unoccupied Molecular Orbital (LUMO) of the polymer to form excitons, the excitons diffuse to the donor/acceptor interface under the action of a built-in electric field to be separated into freely moving electrons and holes, then the electrons are transferred in the acceptor phase and collected by the cathode, and the holes pass through the donor phase and are collected by the anode, so that a photocurrent is generated, and an effective photoelectric conversion process is formed.
The existing polymer solar cell generally has a single cell unit structure, the photoelectric conversion efficiency is not high, the absorption of the active layer to sunlight is limited, the utilization of the device to the sunlight cannot be fundamentally improved, and the improvement of the efficiency is restricted.
Disclosure of Invention
The invention aims to provide a parallel polymer solar cell with high energy conversion rate.
The technical scheme of the invention is as follows:
a parallel polymer solar cell comprises an anode substrate, a first hole buffer layer, a first active layer, an n-type doping layer, a second active layer, a second hole buffer layer and an anode layer which are sequentially stacked, namely the structure of the cell sequentially comprises: anode substrate/first hole buffer layer/first active layer/n-type doped layer/second active layer/second hole buffer layer/anode layer.
The n-type doping layer divides the parallel polymer solar energy into two battery units, namely an anode substrate, a first hole buffer layer, a first active layer and the n-type doping layer form a positive first battery unit, and an anode layer and the n-type doping layer in the anode substrate are respectively used as an anode and a cathode of the first battery unit; the n-type doping layer, the second active layer, the electronic buffer layer and the anode layer form an inverted second battery unit, and the anode layer and the n-type doping layer are respectively used as an anode and a cathode of the second battery unit; the n-type doped layer is simultaneously used as the cathode of the first battery unit and the second battery unit, so that the first battery unit and the second battery unit form a parallel polymer solar battery through the n-type doped layer.
In the parallel polymer solar cell, the functional layers are made of the following materials:
the conductive anode substrate is indium tin oxide glass (ITO), indium-doped zinc oxide glass (IZO), fluorine-doped tin oxide glass (FTO) or aluminum-doped zinc oxide glass (AZO);
the material of the first hole buffer layer and the second hole buffer layer is a mixture of poly 3, 4-ethylenedioxythiophene (PEDOT) and sodium polystyrene sulfonate (PSS), namely a mixture of PEDOT and PSS;
the materials of the first active layer and the second active layer are poly 3-hexylthiophene (P3HT), poly [ 2-methoxy-5- (3, 7-dimethyloctyloxy) P-phenylene vinylene ] (MDMO-PPV) or poly [ 2-methoxy-5- (2' -vinyl-hexyloxy) P-phenylene vinylene ] (MEH-PPV) and [6,6] -phenyl-C61-methyl butyrate (PCBM) to form a mixture, namely P3HT: PCBM, MDMO-PPV: PCBM or MEH-PPV: PCBM mixture; wherein the mass ratio of P3HT to PCBM is controlled within the range of 1: 1-1: 0.8, and the mass ratio of MODO-PPV to PCBM and MEH-PPV to PCBM is controlled within the range of 1: 4-1: 1 respectively;
the material of the n-type doped layer is a doped mixture formed by doping an electron injection material with an electron transport material; wherein,
the electron injection material is lithium fluoride (LiF) or lithium carbonate (Li)2CO3) Cesium carbonate (Cs)2CO3) Cesium azide (CsN)3) Or cesium fluoride (CsF);
the electron transport material is 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1,2, 4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI);
the anode layer is made of aluminum (Al), silver (Ag), gold (Au) or platinum (Pt).
The invention also aims to provide a preparation method of the parallel polymer solar cell, which comprises the following process steps:
s1, sequentially carrying out ultrasonic cleaning on the anode substrate in detergent, deionized water, acetone, ethanol and isopropanol to remove organic pollutants on the surface;
s2, spin-coating a first hole buffer layer on the surface of the anode substrate, drying, spin-coating a first active layer on the surface of the first hole buffer layer, and drying;
s3, evaporating an n-type doping layer on the surface of the first active layer;
s4, spin-coating a second active layer on the surface of the n-type doped layer, and then drying; spin-coating a second hole buffer layer on the surfaces of the two active layers, and then drying;
and S5, evaporating an anode layer on the surface of the second hole buffer layer to obtain the parallel polymer solar cell.
In step S1 of the above preparation method, the method further includes the following steps:
and ultrasonically cleaning the anode substrate in the detergent, deionized water, acetone, ethanol and isopropanol in sequence.
According to the parallel polymer solar cell, the active layers of the two cell units can capture more sunlight as much as possible, so that more electrons and holes are generated, the connection layer for connecting the two cells is the n-doped layer, the conductivity of the cell can be improved, and the injection efficiency of the holes and the electrons is improved.
Drawings
FIG. 1 is a schematic view of a parallel polymer solar cell according to the present invention;
FIG. 2 is a flow chart of a process for preparing a parallel polymer solar cell according to the present invention;
fig. 3 is a parallel polymer solar cell of example 1: ITO substrate/PEDOT: PSS/P3HT: PCBM/CsN3Bphen/P3HT PCBM/PEDOT PSS/Al vs. comparative cell: the current density and voltage relation graph of the ITO substrate/PEDOT: PSS/P3HT: PCBM/LiF/Al; wherein, curve 1 is the curve of example 1, and curve 2 is the curve of comparative example.
Detailed Description
As shown in fig. 1, the parallel polymer solar cell provided by the present invention is a layered structure, and the layered structure sequentially includes: the structure of the cell comprises an anode substrate 11, a first hole buffer layer 12, a first active layer 13, an n-type doped layer 14, a second active layer 15, a second hole buffer layer 16 and an anode layer 17, namely: anode substrate 11/first hole buffer layer 12/first active layer 13/n-type doped layer 14/second active layer 15/second hole buffer layer 16/anode layer 17.
The n-type doped layer 14 divides the parallel polymer solar cell into two cell units, namely, the anode substrate 11, the first hole buffer layer 12, the first active layer 13 and the n-type doped layer 14 form a positive first cell unit, and the anode layer of the anode substrate 11 and the n-type doped layer 14 are respectively used as the anode and the cathode of the first cell unit; the n-type doped layer 14, the second active layer 15, the electron buffer layer 16 and the anode layer 17 constitute an inverted second battery cell, and the anode layer 17 and the n-type doped layer 14 serve as an anode and a cathode of the second battery cell, respectively; the n-type doped layer 14 serves as the cathode of the first cell unit and the cathode of the second cell unit, so that the first cell unit and the second cell unit form a parallel polymer solar cell through the n-type doped layer 14.
In the parallel polymer solar cell, the functional layers are made of the following materials:
the conductive anode substrate is indium tin oxide glass (ITO), indium-doped zinc oxide glass (IZO), fluorine-doped tin oxide glass (FTO) or aluminum-doped zinc oxide glass (AZO);
the materials of the first hole buffer layer and the second hole buffer layer are respectively a mixture of poly 3, 4-ethylenedioxythiophene (PEDOT) and sodium polystyrene sulfonate (PSS), namely a mixture of PEDOT and PSS;
the materials of the first active layer and the second active layer are poly 3-hexylthiophene (P3HT), poly [ 2-methoxy-5- (3, 7-dimethyloctyloxy) P-phenylethene ] (MDMO-PPV) or poly [ 2-methoxy-5- (2' -vinyl-hexyloxy) P-phenylethene ] (MEH-PPV) and [6,6] -phenyl-C61-methyl butyrate (PCBM) to form a mixture; namely P3HT PCBM, MDMO-PPV PCBM or MEH-PPV PCBM mixture; wherein the mass ratio of P3HT to PCBM is controlled within the range of 1: 1-1: 0.8, and the mass ratio of MODO-PPV to PCBM and MEH-PPV to PCBM is controlled within the range of 1: 4-1: 1 respectively;
the material of the n-type doped layer is a doped mixture formed by doping an electron injection material with an electron transport material, the electron transport material is a host, the electron injection material is an object (namely a doped material), and the doping ratio of the object material is 10-60 wt% (mass percentage, the same below); wherein,
the electron injection material is lithium fluoride (LiF) or lithium carbonate (Li)2CO3) Cesium carbonate (Cs)2CO3) Cesium azide (CsN)3) Or cesium fluoride (CsF);
the electron transport material is 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1,2, 4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI);
the material of the anode layer is a metal material, such as aluminum (Al), silver (Ag), gold (Au), or platinum (Pt), preferably Al; the anode layer has a thickness of 20 to 250nm, preferably 150 nm.
As shown in fig. 2, the preparation method of the parallel polymer solar cell includes the following steps:
s1, sequentially carrying out ultrasonic cleaning on the anode substrate in detergent, deionized water, acetone, ethanol and isopropanol to remove organic pollutants on the surface; after cleaning, carrying out oxygen plasma treatment for 5-15 min or UV-ozone treatment for 5-20 min under the power of 10-50W;
s2, spin-coating a first hole buffer layer with the thickness of 20-80 nm on the surface of the anode layer of the anode substrate, drying, then spin-coating a first active layer with the thickness of 80-300 nm on the surface of the first hole buffer layer, and then drying;
s3, evaporating an n-type doping layer with the thickness of 10-150 nm on the surface of the first active layer;
s4, coating a second active layer with the thickness of 80-300 nm on the surface of the n-type doped layer, and then drying; then spin-coating a second hole buffer layer with the thickness of 20-80 nm on the surfaces of the two active layers, and then drying;
and S5, evaporating an anode layer with the thickness of 20-250 nm on the surface of the second cavity buffer layer, and finally preparing the parallel polymer solar cell.
In the steps S2 and S5 of the preparation method, the first hole buffer layer and the second hole buffer layer are aqueous solutions of PEDOT and PSS with the mass ratio of 6: 1, the mass percentage of the PEDOT and the PSS is 1.5 wt%, and after the spin coating of the first hole buffer layer and the second hole buffer layer is finished, the first hole buffer layer and the second hole buffer layer are dried and the thickness is controlled to be 20-80 nm; the hole buffer layer is preferably 40nm thick.
In steps S2 and S4 of the preparation method, the materials of the first active layer and the second active layer are solution systems, the solvent is one or two mixed solvents of toluene, xylene, chlorobenzene or chloroform, and the solute is P3HT: PCBM, MDMO-PPV: PCBM or MEH-PPV: PCBM. The total concentration of each system is controlled to be 8-30mg/ml, and the mass ratio of P3HT to PCBM is controlled to be 1: 1-1: 0.8; the mass ratio of MDMO-PPV to PCBM to MEH-PPV to PCBM is controlled within the range of 1: 4-1: 1; then spin-coating in a glove box filled with inert gas, and finally annealing at 50-200 ℃ for 10-100 min, or standing at room temperature for 24-48 h, wherein the thickness is controlled to be 80-300 nm; preferably a total concentration of 15mg/ml P3HT: PCBM chlorobenzene solution system, preferably a mass ratio of P3HT: PCBM of 1:0.8, preferably annealing at 120 ℃ for 10min, preferably an active layer thickness of 200 nm.
According to the parallel polymer solar cell, the active layers of the two cell units can capture more sunlight as much as possible, so that more electrons and holes are generated, the connection layer for connecting the two cells is the n-doped layer, the conductivity of the cell can be improved, and the injection efficiency of the holes and the electrons is improved.
The following provides a more detailed description of the preferred embodiments of the present invention.
Example 1
The structure of the parallel polymer solar cell in the embodiment is as follows: ITO substrate/PEDOT: PSS/P3HT: PCBM/CsN3:Bphen/P3HT:PCBM/PEDOT:PSS/Al。
The preparation process of the parallel polymer solar cell comprises the following steps:
1. cleaning an ITO substrate (wherein ITO is an anode layer) by using liquid detergent, deionized water, acetone, ethanol and isopropanol in sequence, performing ultrasonic treatment for 15min to remove organic pollutants on the surface of glass, and performing oxygen plasma surface treatment on an ITO layer of the ITO substrate for 15min under the condition that the power is 10W after cleaning;
2. preparing a PEDOT/PSS aqueous solution (wherein the mass ratio of PEDOT to PSS is 6: 1, and the total mass percentage of PEDOT and PSS is 1.5 wt%) on the surface of an ITO layer of an ITO substrate in a spin coating mode; drying to obtain a first hole buffer layer with the thickness of 40 nm;
3. spin-coating a P3 HT-PCBM chlorobenzene solution system on the surface of the first cavity buffer layer, and annealing at 120 ℃ for 10min after spin-coating to obtain a first active layer with the thickness of 200 nm; wherein in a chlorobenzene solution system of P3HT: PCBM, the solvent is chlorobenzene, the total concentration of P3HT and PCBM is 14mg/ml, and the mass ratio of P3HT to PCBM is 1: 0.8;
4. evaporating an n-type doped layer with a thickness of 50nm on the surface of the first active layer, wherein the material is CsN3Bphen as the main material, CsN3Is a doping material, and the doping proportion is 20 wt%;
5. and spin-coating a second active layer on the surface of the n-type doped layer again: spin-coating a P3 HT-PCBM chlorobenzene solution system on the surface of the n-type doped layer, and annealing at 120 ℃ for 10min to obtain a second active layer with the thickness of 200 nm; wherein, in a P3HT PCBM chlorobenzene solution system, the solvent is chlorobenzene, the total concentration of P3HT and PCBM is 15mg/ml, and the mass ratio of P3HT to PCBM is 1: 0.8;
6. preparing a PEDOT/PSS aqueous solution (wherein the mass ratio of PEDOT to PSS is 6: 1, and the total mass percentage of PEDOT and PSS is 1.5 wt%) on the surface of the n-type doped layer in a spin coating mode; drying after spin coating to prepare a second hole buffer layer with the thickness of 40 nm;
7. evaporating an anode layer on the surface of the second cavity buffer layer, wherein the material is Al, and the thickness is 150 nm;
8. and after the preparation process is finished, the required parallel polymer solar cell is obtained.
FIG. 3 shows a parallel type polymer solar cell (structure: ITO substrate/PEDOT: PSS/P3HT: PCBM/CsN) prepared in example 13Bphen/P3HT: PCBM/PEDOT: PSS/Al) and comparative battery (structure: ITO substrate/PEDOT: PSS/P3HT: PCBM/LiF/Al) current density versus voltage.
The current density and voltage are tested by a 2602 current-voltage tester produced by Keithly corporation of America, and the test process comprises the following steps: A500W xenon lamp (Osram) is combined with a filter of AM 1.5 to be used as a white light source for simulating sunlight.
As can be seen from FIG. 3, the current density of the comparative solar cell was 5.11mA/cm2While the current density of the solar cell in this example was increased to 7.57mA/cm2(ii) a This indicates that the resistance of the solar cell of this parallel structure is reducedThe two active layers absorb sunlight more effectively, and the n doping improves the efficiency of collecting electrons by the electron transmission efficiency electrode, and finally improves the energy conversion efficiency of the solar cell, wherein the energy conversion efficiency of the comparative solar cell is only 1.19%, and the energy conversion efficiency of the embodiment 1 is improved to 1.86%.
Table 1 shows specific data corresponding to curve 1 and curve 2; wherein curve 1 is the curve of example 1 and curve 2 is the curve of comparative example;
TABLE 1
| Current density (mA cm-2) | Voltage (V) | η(％) | Fill factor | |
| Curve 1 | 7.57 | 0.74 | 1.86 | 0.33 |
| Curve 2 | 5.11 | 0.65 | 1.19 | 0.35 |
Example 2
The structure of the parallel polymer solar cell in the embodiment is as follows: IZO substrate/PEDOT PSS/P3HT PCBM/CsF PBD/MDMO-PPV PCBM/PEDOT PSS/Ag.
The preparation process of the parallel polymer solar cell comprises the following steps:
1. cleaning an IZO substrate (wherein IZO is an anode layer) by using detergent, deionized water, acetone, ethanol and isopropanol in sequence, performing ultrasonic treatment for 15min respectively during cleaning to remove organic pollutants on the surface of glass, and performing oxygen plasma surface treatment on the IZO surface of the IZO substrate for 10min under the condition that the power is 30W after cleaning;
2. PSS aqueous solution is prepared on the IZO surface of the IZO substrate in a spin coating mode; drying to obtain a first hole buffer layer with the thickness of 20 nm;
3. spin-coating a P3 HT-PCBM toluene solution system on the surface of the first cavity buffer layer, and annealing at 200 ℃ for 80min to obtain a first active layer with the thickness of 300 nm; wherein, in a P3HT PCBM toluene solution system, the solvent is toluene, the total concentration of P3HT and PCBM is 8mg/ml, and the mass ratio of P3HT to PCBM is 1: 0.8;
4. evaporating an n-type doping layer with the thickness of 150nm on the surface of the first active layer, wherein the n-type doping layer is made of CsF and PBD, the PBD is a main body material, the CsF is a doping material, and the doping proportion is 60 wt%;
5. and spin-coating a second active layer on the surface of the n-type doped layer again: spin-coating a MDMO-PPV PCBM chloroform solution system on the surface of the n-type doped layer, and annealing at 200 ℃ for 5min to obtain a second active layer with the thickness of 300 nm; wherein, in the MDMO-PPV-PCBM chloroform solution system, the solvent is chloroform, the total concentration of the MDMO-PPV and the PCBM is 24mg/ml, and the mass ratio of P3HT to the PCBM is 1: 4;
6. preparing a PEDOT (Poly ethylene glycol ether ketone) PSS aqueous solution on the surface of the n-type doped layer in a spin coating mode; drying after spin coating to prepare a second hole buffer layer with the thickness of 20 nm;
7. evaporating an anode layer on the surface of the second cavity buffer layer, wherein the material is Ag and the thickness is 20 nm;
8. and after the preparation process is finished, the required parallel polymer solar cell is obtained.
Example 3
The structure of the parallel polymer solar cell in the embodiment is as follows:
FTO substrate/PEDOT, PSS/MDMO-PPV, PCBM/LiF, TPBi/MEH-PPV, PCBM/PEDOT, PSS/Au.
The preparation process of the parallel polymer solar cell comprises the following steps:
1. cleaning an FTO substrate (wherein, the FTO is an anode layer) by using liquid detergent, deionized water, acetone, ethanol and isopropanol in sequence, performing ultrasonic treatment for 15min to remove organic pollutants on the surface of glass, and performing oxygen plasma surface treatment on the FTO surface of the FTO substrate for 5min under the condition that the power is 50W after cleaning;
2. preparing a PEDOT (Poly ethylene terephthalate) PSS (Poly ethylene terephthalate) aqueous solution on the FTO surface of the FTO substrate in a spin coating mode; drying to obtain a first hole buffer layer with the thickness of 80 nm;
3. spin-coating MDMO-PPV PCBM chlorobenzene solution system on the surface of the first cavity buffer layer, and annealing at 50 deg.C for 100min to obtain a first active layer with thickness of 120 nm; wherein, in a chlorobenzene solution system of MDMO-PPV and PCBM, the solvent is chlorobenzene, the total concentration of the MDMO-PPV and the PCBM is 30mg/ml, and the mass ratio of the MDMO-PPV to the PCBM is 1: 1;
4. evaporating an n-type doped layer with the thickness of 10nm on the surface of the first active layer, wherein the material is LiF and TPBi, the TPBi is a main body material, the LiF is a doping material, and the doping proportion is 10 wt%;
5. and spin-coating a second active layer on the surface of the n-type doped layer again: spin-coating a MEH-PPV-PCBM xylene solution system on the surface of the n-type doped layer, and annealing at 180 ℃ for 100min to obtain a second active layer with the thickness of 150 nm; wherein in a xylene solution system of MEH-PPV and PCBM, the solvent is xylene, the total concentration of the MEH-PPV and the PCBM is 26mg/ml, and the mass ratio of the MEH-PPV to the PCBM is 1: 2;
6. preparing a PEDOT (Poly ethylene glycol ether ketone) PSS aqueous solution on the surface of the n-type doped layer in a spin coating mode; drying after spin coating to prepare a second hole buffer layer with the thickness of 60 nm;
7. evaporating an anode layer on the surface of the second cavity buffer layer, wherein the anode layer is made of Au and has the thickness of 180 nm;
8. and after the preparation process is finished, the required parallel polymer solar cell is obtained.
Example 4
The structure of the parallel polymer solar cell in the embodiment is as follows: AZO substrate/PEDOT PSS/MEH-PPV PCBM/Li2CO3:TAZ/MEH-PPV:PCBM/PEDOT:PSS/Pt。
The preparation process of the parallel polymer solar cell comprises the following steps:
1. cleaning the AZO substrate with liquid detergent, deionized water, acetone, ethanol and isopropanol in sequence, performing ultrasonic treatment for 15min respectively during cleaning to remove organic pollutants on the glass surface, and performing UV-ozone treatment on the AZO surface of the AZO substrate for 5min after cleaning;
2. preparing a PEDOT (PSS) aqueous solution on the AZO surface of the AZO substrate in a spin coating mode; drying to obtain a first hole buffer layer with the thickness of 70nm, and then drying;
3. spin-coating a solution system of MEH-PPV, PCBM toluene and xylene on the surface of the first cavity buffer layer, and standing at 25 ℃ for 24h to obtain a first active layer with the thickness of 250 nm; wherein, in a MEH-PPV-PCBM toluene and xylene solution system, the solvents are toluene and xylene, the total concentration of the MEH-PPV and the PCBM is 10mg/ml, and the mass ratio of the MEH-PPV to the PCBM is 1: 1;
4. depositing an n-type doped layer with a thickness of 100nm on the surface of the first active layer by evaporation, wherein the material is Li2CO3TAZ, and TAZ is the host material, Li2CO3Is a doping material, and the doping proportion is 30 wt%;
5. and spin-coating a second active layer on the surface of the n-type doped layer again: spin-coating a MEH-PPV-PCBM xylene solution system on the surface of the n-type doped layer, and annealing at 200 ℃ for 20min to obtain a second active layer with the thickness of 160 nm; wherein in a xylene solution system of MEH-PPV and PCBM, the solvent is xylene, the total concentration of the MEH-PPV and the PCBM is 15mg/ml, and the mass ratio of the MEH-PPV to the PCBM is 1: 3;
6. preparing a PEDOT (Poly ethylene glycol ether ketone) PSS aqueous solution on the surface of the n-type doped layer in a spin coating mode; drying after spin coating to prepare a second hole buffer layer with the thickness of 30 nm;
7. evaporating an anode layer on the surface of the second cavity buffer layer, wherein the material is Pt, and the thickness is 50 nm;
8. and after the preparation process is finished, the required parallel polymer solar cell is obtained.
Example 5
The structure of the parallel polymer solar cell in the embodiment is as follows:
ITO substrate/PEDOT PSS/MDMO-PPV PCBM/Cs2CO3:PBD/MEH-PPV:PCBM/PEDOT:PSS/Al。
The preparation process of the parallel polymer solar cell comprises the following steps:
1. cleaning an ITO substrate by using detergent, deionized water, acetone, ethanol and isopropanol in sequence, performing ultrasonic treatment for 15min respectively during cleaning to remove organic pollutants on the surface of glass, and performing UV-ozone treatment on an ITO layer of the ITO substrate for 20min after cleaning;
2. preparing a PEDOT (Poly ethylene terephthalate) (PSS) aqueous solution on the surface of an ITO layer of an ITO substrate in a spin coating mode; drying to obtain a first hole buffer layer with the thickness of 20 nm;
3. spin-coating an MDMO-PPV-PCBM chlorobenzene solution system on the surface of the first cavity buffer layer, and standing for 48 hours at 25 ℃ after the spin-coating to obtain a first active layer with the thickness of 100 nm; wherein, in a chlorobenzene solution system of MDMO-PPV and PCBM, the solvent is chlorobenzene, the total concentration of the MDMO-PPV and the PCBM is 8mg/ml, and the mass ratio of the MDMO-PPV to the PCBM is 1: 3;
4. evaporating an n-type doped layer with a thickness of 80nm on the surface of the first active layer, wherein the material is Cs2CO3PBD as main material, Cs2CO3Is a doping material, and the doping proportion is 50 wt%;
5. and spin-coating a second active layer on the surface of the n-type doped layer again: spin-coating a PCBM chlorobenzene solution system on the surface of the n-type doped layer, and annealing at 70 ℃ for 50min to obtain a second active layer with the thickness of 200 nm; wherein in a chlorobenzene solution system of MEH-PPV and PCBM, the solvent is chlorobenzene, the total concentration of the MEH-PPV and the PCBM is 24mg/ml, and the mass ratio of the MEH-PPV to the PCBM is 1: 4;
6. preparing a PEDOT (Poly ethylene glycol ether ketone) PSS aqueous solution on the surface of the n-type doped layer in a spin coating mode; drying after spin coating to prepare a second hole buffer layer with the thickness of 30 nm;
7. evaporating an anode layer on the surface of the second cavity buffer layer, wherein the material is Ag and the thickness is 250 nm;
8. and after the preparation process is finished, the required parallel polymer solar cell is obtained.
It should be understood that the above description is illustrative of the preferred embodiment of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.
Claims (9)
1. A parallel polymer solar cell is characterized by comprising an anode substrate, a first hole buffer layer, a first active layer, an n-type doping layer, a second active layer, a second hole buffer layer and an anode layer which are sequentially stacked;
the material of the n-type doped layer is a doped mixture formed by doping an electron injection material with an electron transport material.
2. A parallel polymer solar cell according to claim 1, wherein the anode substrate is indium tin oxide glass, indium doped zinc oxide glass, fluorine doped tin oxide glass, or aluminum doped zinc oxide glass.
3. A parallel polymer solar cell according to claim 1, wherein the materials of the first and second hole buffer layers are a mixture of poly-3, 4-ethylenedioxythiophene and sodium polystyrene sulfonate, respectively.
4. A parallel polymer solar cell according to claim 1, wherein the material of the first and second active layers is poly 3-hexylthiophene, poly [ 2-methoxy-5- (3, 7-dimethyloctyloxy) p-phenylene vinylene ] or a mixture of poly [ 2-methoxy-5- (2' -vinyl-hexyloxy) poly-p-phenylene vinylene ] mixed with [6,6] -phenyl-C61-methyl butyrate.
5. A parallel polymer solar cell according to claim 4, wherein in the mixture of poly-3-hexylthiophene and [6,6] -phenyl-C61-methyl butyrate, the mass ratio of poly-3-hexylthiophene to [6,6] -phenyl-C61-methyl butyrate is 1: 1-1: 0.8;
in the mixture formed by the poly [ 2-methoxy-5- (3, 7-dimethyloctyloxy) p-phenylene ethylene ] and the [6,6] -phenyl-C61-methyl butyrate, the mass ratio of the poly [ 2-methoxy-5- (3, 7-dimethyloctyloxy) p-phenylene ethylene ] to the [6,6] -phenyl-C61-methyl butyrate is 1: 4-1: 1;
in the mixture formed by the poly [ 2-methoxy-5- (2 '-vinyl-hexyloxy) poly (p-phenylene) and the [6,6] -phenyl-C61-methyl butyrate, the mass ratio of the poly [ 2-methoxy-5- (2' -vinyl-hexyloxy) poly (p-phenylene) to the [6,6] -phenyl-C61-methyl butyrate is 1: 4-1: 1.
6. A parallel polymer solar cell according to claim 1, wherein the electron transport material is 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole, 4, 7-diphenyl-1, 10-phenanthroline, a 1,2, 4-triazole derivative, or N-arylbenzimidazole;
the electron injection material is lithium fluoride, lithium carbonate, cesium azide or cesium fluoride.
7. A parallel polymer solar cell according to claim 1, wherein the material of the anode layer is aluminum, silver, gold or platinum.
8. A method of making a parallel polymer solar cell of claim 1, comprising the steps of:
s1, cleaning and drying the surface of the anode substrate for later use;
s2, spin-coating a first hole buffer layer on the surface of the anode layer of the anode substrate, drying, spin-coating a first active layer on the surface of the hole buffer layer, and drying;
s3, evaporating an n-type doping layer on the surface of the dried first active layer;
s4, spin-coating a second active layer on the surface of the n-type doped layer, and then drying; spin-coating a second hole buffer layer on the surface of the second active layer, and then drying;
and S5, evaporating an anode layer on the surface of the second hole buffer layer to obtain the parallel polymer solar cell.
9. A method according to claim 8, wherein the cleaning process in step S1 includes:
and ultrasonically cleaning the anode substrate in the detergent, deionized water, acetone, ethanol and isopropanol in sequence.
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| CN104253175A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and production method thereof |
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| CN104253219A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and method for manufacturing same |
| CN108832007B (en) * | 2018-07-04 | 2021-11-02 | 河南师范大学 | A kind of preparation method of perovskite and semiconductor type silicon hybrid solar cell |
| CN110931657A (en) * | 2019-12-06 | 2020-03-27 | 中国乐凯集团有限公司 | Flexible composite substrate for perovskite thin-film solar cell and preparation method thereof |
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