CN103795389B - 接近传感器 - Google Patents
接近传感器 Download PDFInfo
- Publication number
- CN103795389B CN103795389B CN201310514177.9A CN201310514177A CN103795389B CN 103795389 B CN103795389 B CN 103795389B CN 201310514177 A CN201310514177 A CN 201310514177A CN 103795389 B CN103795389 B CN 103795389B
- Authority
- CN
- China
- Prior art keywords
- circuit board
- proximity transducer
- ladle cover
- semiconductor device
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 239000000945 filler Substances 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 27
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- 239000002184 metal Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- OTEKOJQFKOIXMU-UHFFFAOYSA-N 1,4-bis(trichloromethyl)benzene Chemical compound ClC(Cl)(Cl)C1=CC=C(C(Cl)(Cl)Cl)C=C1 OTEKOJQFKOIXMU-UHFFFAOYSA-N 0.000 claims 1
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- 239000000919 ceramic Substances 0.000 description 17
- 239000011162 core material Substances 0.000 description 11
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- 229910000859 α-Fe Inorganic materials 0.000 description 7
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
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- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/945—Proximity switches
- H03K17/95—Proximity switches using a magnetic detector
- H03K17/9505—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12190395.9 | 2012-10-29 | ||
| EP12190395.9A EP2725715B1 (de) | 2012-10-29 | 2012-10-29 | Näherungssensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103795389A CN103795389A (zh) | 2014-05-14 |
| CN103795389B true CN103795389B (zh) | 2018-02-06 |
Family
ID=47143602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310514177.9A Active CN103795389B (zh) | 2012-10-29 | 2013-10-28 | 接近传感器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9239221B2 (de) |
| EP (1) | EP2725715B1 (de) |
| JP (1) | JP6299031B2 (de) |
| CN (1) | CN103795389B (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10392959B2 (en) * | 2012-06-05 | 2019-08-27 | General Electric Company | High temperature flame sensor |
| DE102013217888B4 (de) * | 2012-12-20 | 2024-07-04 | Continental Automotive Technologies GmbH | Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung |
| WO2016006065A1 (ja) * | 2014-07-09 | 2016-01-14 | 三菱電機株式会社 | 半導体装置 |
| DE102015103551A1 (de) * | 2015-03-11 | 2016-09-15 | Sick Ag | Steckerbaugruppe für einen Sensor und Verfahren zur Montage einer Steckerbaugruppe für einen Sensor |
| CN104790798B (zh) * | 2015-04-07 | 2017-03-15 | 伍可炳 | 防夹伤地铁屏蔽门开关 |
| CN104727692B (zh) * | 2015-04-07 | 2017-03-15 | 伍可炳 | 防夹伤地铁屏蔽门门控电路 |
| JP6271471B2 (ja) * | 2015-06-12 | 2018-01-31 | 信和株式会社 | 足場の揺れ検出システム及び同システムが配設された足場 |
| CN105479470B (zh) * | 2016-01-12 | 2017-06-16 | 佛山市溢釜科技有限公司 | 一种周向无死角位置检知传感器 |
| JP6610286B2 (ja) * | 2016-01-22 | 2019-11-27 | オムロン株式会社 | 近接スイッチ |
| CN105916339A (zh) * | 2016-05-31 | 2016-08-31 | 天津市建筑设计院 | 一种加速度传感器防水装置及防水方法 |
| KR102273785B1 (ko) * | 2017-01-24 | 2021-07-06 | 삼성에스디아이 주식회사 | 배터리 팩 관리 방법 및 시스템 |
| JP6968545B2 (ja) * | 2017-02-01 | 2021-11-17 | オムロン株式会社 | 近接センサ |
| EP3418694B1 (de) | 2017-06-21 | 2020-01-01 | Optosys SA | Näherungssensor |
| FR3080914B1 (fr) * | 2018-05-07 | 2020-11-20 | Safran Electronics & Defense | Procede de mesure utilisant un capteur de proximite inductif relie a un cable |
| CN109596147A (zh) * | 2019-02-04 | 2019-04-09 | 光驰科技(上海)有限公司 | 一种真空镀膜用耐高温的接近式传感器 |
| EP3963290A4 (de) * | 2019-04-28 | 2023-05-03 | Harco, LLC | Verfahren zur temperaturkompensation für hall-effekt-näherungssensoren |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789920A (en) * | 1995-12-01 | 1998-08-04 | Gebhard Balluff Gmbh & Co. | Position sensor housing having duroplastic molding compound and thermoplastic molding compound |
| EP1879294A1 (de) * | 2006-07-11 | 2008-01-16 | Balluff GmbH | Elektrisches Gerät und Verfahren zur Herstellung eines elektrischen Geräts |
| US7825655B1 (en) * | 2008-05-22 | 2010-11-02 | Balluff, Inc. | Inductive proximity sensors and housings for inductive proximity sensors |
| CN102193110A (zh) * | 2010-02-04 | 2011-09-21 | 欧姆龙株式会社 | 非接触式传感器 |
| CN102860142A (zh) * | 2010-04-28 | 2013-01-02 | 国际商业机器公司 | 印刷电路板边缘连接器 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56143857U (de) * | 1980-03-28 | 1981-10-30 | ||
| JPS5742101A (en) * | 1980-08-27 | 1982-03-09 | Tokai Konetsu Kogyo Kk | Ceramic resistor |
| JPH0125388Y2 (de) * | 1980-09-19 | 1989-07-31 | ||
| DE69000465T2 (de) | 1990-12-21 | 1993-05-13 | Detra Sa | Induktiver naeherungssensor. |
| US5264248A (en) * | 1992-08-03 | 1993-11-23 | General Electric Company | Adhesion of metal coatings of polypyromellitimides |
| JPH0668757A (ja) * | 1992-08-21 | 1994-03-11 | Omron Corp | 近接スイッチ |
| JPH06204391A (ja) * | 1992-09-24 | 1994-07-22 | Texas Instr Inc <Ti> | 集積回路用セラミック・リードオンチップ・パッケージと方法 |
| US5635754A (en) * | 1994-04-01 | 1997-06-03 | Space Electronics, Inc. | Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages |
| EP0936738A1 (de) * | 1998-02-13 | 1999-08-18 | Optosys SA | Induktiver Näherungsschalter mit einem aus einem Stück bestehenden Gehäuse |
| EP0936741B1 (de) * | 1998-02-13 | 2009-04-29 | Optosys SA | Induktiver Näherungsschalter mit einem vorzugsweise aus einem Stück bestehenden Gehäuse |
| WO2001033631A1 (en) * | 1999-10-29 | 2001-05-10 | Nikko Company | Package for high-frequency device |
| JP2001257088A (ja) * | 2000-03-10 | 2001-09-21 | Stanley Electric Co Ltd | 放電灯起動装置 |
| US6952046B2 (en) * | 2002-06-19 | 2005-10-04 | Foster-Miller, Inc. | Electronic and optoelectronic component packaging technique |
| US20050046016A1 (en) * | 2003-09-03 | 2005-03-03 | Ken Gilleo | Electronic package with insert conductor array |
| JP2005175509A (ja) * | 2005-01-14 | 2005-06-30 | Sanyo Electric Co Ltd | 回路装置 |
| JP2007173750A (ja) * | 2005-12-26 | 2007-07-05 | Sony Corp | 半導体装置及びその製造方法 |
| JP5506503B2 (ja) * | 2010-03-31 | 2014-05-28 | アズビル株式会社 | 近接スイッチ |
| DE102010042543B4 (de) * | 2010-06-30 | 2017-06-29 | Vectron International Gmbh | Metallisierung für Hohlraumgehäuse und nicht-magnetisches hermetisch dichtes Hohlraumgehäuse |
-
2012
- 2012-10-29 EP EP12190395.9A patent/EP2725715B1/de active Active
-
2013
- 2013-10-23 US US14/061,132 patent/US9239221B2/en active Active
- 2013-10-25 JP JP2013222786A patent/JP6299031B2/ja active Active
- 2013-10-28 CN CN201310514177.9A patent/CN103795389B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789920A (en) * | 1995-12-01 | 1998-08-04 | Gebhard Balluff Gmbh & Co. | Position sensor housing having duroplastic molding compound and thermoplastic molding compound |
| EP1879294A1 (de) * | 2006-07-11 | 2008-01-16 | Balluff GmbH | Elektrisches Gerät und Verfahren zur Herstellung eines elektrischen Geräts |
| US7825655B1 (en) * | 2008-05-22 | 2010-11-02 | Balluff, Inc. | Inductive proximity sensors and housings for inductive proximity sensors |
| CN102193110A (zh) * | 2010-02-04 | 2011-09-21 | 欧姆龙株式会社 | 非接触式传感器 |
| CN102860142A (zh) * | 2010-04-28 | 2013-01-02 | 国际商业机器公司 | 印刷电路板边缘连接器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140117979A1 (en) | 2014-05-01 |
| JP6299031B2 (ja) | 2018-03-28 |
| EP2725715A1 (de) | 2014-04-30 |
| US9239221B2 (en) | 2016-01-19 |
| JP2014089958A (ja) | 2014-05-15 |
| CN103795389A (zh) | 2014-05-14 |
| EP2725715B1 (de) | 2018-12-12 |
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| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |