CN103777127A - Light-emitting diode photoelectric characteristic measurement device - Google Patents

Abstract

The present invention discloses a device for measuring the photoelectric characteristics of a light emitting diode, comprising: a container having a light input port and a light output port; a measuring module connected to the light output port of the container; a test piece carrier located below the container and capable of carrying a light emitting diode to be measured; and a light focusing unit located between the container and the test piece carrier.

Description

Light-emitting diode photoelectric characteristic measurement device

technical field

The invention discloses a device for measuring the photoelectric characteristics of a light emitting diode, in particular to a device for measuring the photoelectric characteristics of a wafer form or chip form light emitting diode.

Background technique

Integrating sphere is a hollow spherical unit, on which a number of light input holes and light output holes can be opened according to requirements, and the inner wall of the sphere is coated with diffusion and reflection properties. When the luminous flux generated by the light-emitting diode to be tested is injected into the integrating sphere from the light input port, after complex diffusion and reflection on the inner wall of the integrating sphere, the luminous flux absorbed by the inner wall of the integrating sphere is determined according to the material of the inner wall coating, and the rest is output from the light. Mouth ejaculation. The function of the integrating sphere is to collect the luminous flux reflected from all directions. Through a special design, the optical power, optical waveform and luminous flux at the light output port can be sampled, and the corresponding parameters of the light-emitting diode can be obtained after conversion.

At present, the industry uses a commercial equipment IS (instrument system) for measuring parameters such as the optical power of light-emitting diodes. The light input port (not shown) fixed on the integrating sphere is designed only for the measurement of the LED package. The pins 62 of the LED TO package 61 to be tested are directly inserted into the test piece holder body 60, and the bottom end of the test piece holder body 60 is connected to a power supply (not shown) to provide current or voltage so that the LED TO under test The luminous flux generated by the package body 61 enters the integrating sphere.

Contents of the invention

The invention provides a measuring device for photoelectric characteristics of light-emitting diodes, comprising: a container, the container has a light input port and a light output port; a measurement module, the measurement module is connected with the light output port of the container; The chip carrier is located under the container and can carry the light-emitting diode to be tested, wherein the surface of the test chip carrier has a reflectivity greater than 50% relative to the luminous flux generated by the light-emitting diode to be tested; and a light gathering unit is located between the container and the test Between the sheet-carrying platforms, the inner wall of the light-gathering unit has a reflectivity greater than 50% relative to the luminous flux generated by the light-emitting diode to be tested.

According to one embodiment of the present invention, wherein the test piece carrier includes a carrier and a thin layer formed on the carrier, and the thin layer is made of a light flux produced by the light-emitting diode to be tested and has a reflectivity greater than 50%. composed of materials.

According to an embodiment of the present invention, the light concentrating unit includes a body and a thin layer formed on the inner wall of the body, and the thin layer is composed of a material having a reflectivity greater than 50% of the luminous flux generated by the LED to be tested.

The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.

Description of drawings

FIG. 1 is a structural diagram of a light-emitting diode photoelectric characteristic measuring device of the present invention.

Fig. 2 is a schematic diagram of a commercial equipment IS (instrument system) test piece holder currently used in the industry.

Detailed ways

In order to further explain the technical means and effects adopted by the present invention to achieve the intended invention purpose, the specific implementation, structure, features and effects of the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments.

Fig. 1 shows the light-emitting diode photoelectric property measuring device disclosed by the present invention, which includes: a container 10, such as a hollow spherical unit, with a light input port 10A and a light output port 10B; a measurement module 11 , the measurement module 11 is connected to the light output port 10B of the container 10; a test piece carrier 12 is located under the container 10 and can carry the light-emitting diode 13 to be tested; a light gathering unit 14 is located between the container 10 and the test piece between the carrying platforms 12 ; and a power supply 15 located under the test piece carrying platforms 12 .

In this embodiment, the container 10 is an integrating sphere with a diameter of at least 2 inches. The test piece carrier 12 can carry the light emitting diodes 13 to be tested, wherein the light emitting diodes 13 are preferably in the form of unpackaged wafers or dies. The surface of the test piece carrier 12 has a reflectivity greater than 50% relative to the luminous flux generated by the light emitting diode 13 to be tested. In another embodiment, the test piece carrier 12 includes a carrier and a thin layer (not shown) formed on the carrier, wherein the thin layer is produced by the light emitting diode 13 to be tested with a light flux greater than 50 % reflectivity of materials; for example: aluminum, copper, nickel, silver, chromium, gold or ceramic materials including at least iron, titanium, silicon, barium. In addition, the device has a power supply 15 that provides the current or voltage required for measuring the light-emitting diode 13, and transmits the current or voltage to the surface of the light-emitting diode 13 when measuring with two angled probes 17; The bending angle θ of the probe is preferably 30 degrees to 150 degrees, and most preferably about 120 degrees. In addition, in order to increase the effect of introducing the luminous flux produced by the light-emitting diode 13 to be tested into the container 10, a light-gathering unit 14 is arranged between the light input port 10A of the container 10 and the test piece carrier 12, wherein the inner wall of the light-gathering unit 14 has a Relative to the luminous flux generated by the light emitting diode 13 to be tested, the reflectivity is greater than 50%. In another embodiment, the light concentrating unit includes a body 14A and a thin layer 14B formed on the inner wall of the body 14A, wherein the thin layer 14B is made of a material having a reflectivity greater than 50% for the luminous flux generated by the light emitting diode 13 to be tested Composition; for example: aluminum, copper, nickel, silver, chromium, gold or ceramic materials including at least iron, titanium, silicon, barium. In order to make the luminous flux generated by the light-emitting diode 13 to be tested be fully guided into the container 10, when measuring the photoelectric characteristics of the light-emitting diode 13, the light-gathering unit 14 must completely cover the test piece carrier 12 or completely cover the light-emitting diode to be tested. 13. The light gathering unit 14 further includes two openings 16 , through which the angled probe 17 can pass through the openings 16 and enter the light gathering unit 14 to measure the LED 13 .

When the luminous flux produced by the light-emitting diode 13 to be tested enters the container 10 from the light input port 10A, after the complex diffusion and reflection of the inner wall of the container 10, the luminous flux absorbed by the inner wall of the container is determined according to the material of the inner wall coating, and the rest is output from the light. The port 10B is emitted, and then enters a measurement module 11, wherein the measurement module further includes a spectrometer (not shown in the figure). After being converted by the measurement module 11, the photoelectric characteristics of the light emitting diode 13 to be measured can be obtained, wherein the electrical characteristics such as: forward bias voltage (forward bias voltage, Vf), reverse breakdown voltage, reverse current (reversed current, IR ), the difference of forward bias voltage before and after heating and the instantaneous peak value of forward bias voltage; the optical properties such as: light intensity (luminous intensity, Iv), peak wavelength (peak length, λp), wavelength half maximum width (fullwidth at half maximum, FWHM), chromaticity coordinates (CIE), dominant wavelength (dominated length, λd), color purity (purity), and color temperature (color temperature).

The method for measuring the photoelectric characteristics of the light emitting diode to be measured is as follows: provide a light emitting diode photoelectric characteristic measuring device 1 as shown in FIG. Two angled probes 17 pass through the opening 16 and enter the light-gathering unit 14 to measure the light-emitting diode 13, and transmit the current or voltage provided by the power supply 15 to the light-emitting diode wafer or light-emitting diode wafer during measurement. The surface of the particle makes it glow. The generated luminous flux enters the container 10 through the light input port 10A after being concentrated by the light concentrating unit 14 , and after complicated diffusion and reflection on the inner wall of the container, the remaining luminous flux is emitted from the light output port 10B. The signal of the emitted luminous flux is transmitted to a measurement module 11, and the emitted luminous flux is converted by a specific program through a spectrometer in the measurement module 11 to obtain the value of the photoelectric characteristic of the light emitting diode.

In a control group experiment, another light-emitting diode photoelectric characteristic measurement device was used to measure a light-emitting diode, wherein the difference between this other measurement device and the measurement device shown in Figure 1 of this embodiment is: this other quantity The measuring device does not have a light gathering unit 14 and the surface of the test piece carrying table 12 does not have a reflection effect. The measurement data show that: when the luminous flux generated by the light-emitting diode enters the light input port of the container of another measuring device, the attenuation rate of the luminous flux is 9.2%; , when the luminous flux generated by the light-emitting diode passes through the light gathering unit 14 and enters the light input port of the container, its luminous flux attenuation rate is 0.3%. It can be known from this that the surface of the test piece carrying table of the measuring device has a reflectivity greater than 50% relative to the luminous flux produced by the light-emitting diode to be measured and the inner wall of the light gathering unit has a reflection greater than 50% relative to the luminous flux produced by the light-emitting diode to be measured. The rate can effectively reduce the attenuation rate when the luminous flux generated by the light-emitting diode enters the light input port of the container, thereby increasing the accuracy of the photoelectric characteristic measurement of the light-emitting diode.

Materials commonly used for the light-emitting diode 13 to be tested in the embodiments of the present invention include aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series, and the like. The structure of the active layer (not shown) such as: single heterostructure (single heterostructure; SH), double heterostructure (double heterostructure; DH), double-side double heterostructure (double-side double heterostructure; DDH), or multiple Layer quantum well (multi-quantumwell; MQW). Furthermore, its luminescence spectrum can be adjusted by changing the physical or chemical elements of semiconductor monolayer or multilayer, and the luminescence wavelength can also be changed by adjusting the logarithm of quantum wells.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the technical content disclosed above to make some changes or modify them into equivalent embodiments with equivalent changes, but as long as they do not depart from the technical solution of the present invention, the Technical Essence Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

Claims (13)

1. the measuring equipment of a light emitting diode photoelectric characteristic, is characterized in that, the measuring equipment of this light emitting diode photoelectric characteristic comprises:

One container, this container has an optical input and a smooth delivery outlet;

One measurement module, this measurement module is connected with the light delivery outlet of this container;

One test piece plummer, is positioned at this container below and can carries light emitting diode to be measured, and wherein this test piece carrier-table surface has the reflectivity that is greater than 50% with respect to the luminous flux of light emitting diode generation to be measured; And

One smooth accumulation unit, between this container and this test piece plummer, wherein this light accumulation unit inwall has the reflectivity that is greater than 50% with respect to the luminous flux of light emitting diode generation to be measured.

2. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: more comprise a power supply unit, to provide this light emitting diode to be measured required curtage.

3. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, it is characterized in that: this test piece plummer comprises a supporting body and be formed at the skim on supporting body, wherein this thin layer has by the luminous flux that light emitting diode to be measured is produced the material that is greater than 50% reflectivity and is formed.

4. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, it is characterized in that: this light accumulation unit comprises a body and be formed at the skim of inner body wall, wherein this thin layer has by the luminous flux that light emitting diode to be measured is produced the material that is greater than 50% reflectivity and is formed.

5. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: this container is a hollow sphere unit.

6. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: this light emitting diode to be measured is wafer form or the crystal grain form not encapsulating.

7. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: two probes that more comprise measuring this light emitting diode to be measured.

8. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 7, is characterized in that: this light accumulation unit more comprises two perforates through the use of measurement for this probe.

9. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 7, is characterized in that: this probe is angled from a fixed angle.

10. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 9, is characterized in that: this probe knuckle angle is between 30 degree to 150 degree.

The measuring equipment of 11. light emitting diode photoelectric characteristics as claimed in claim 1, is characterized in that: this measurement module more comprises a spectroscope.

The measuring equipment of 12. light emitting diode photoelectric characteristics as claimed in claim 1, is characterized in that: this light accumulation unit is completely coated this test piece plummer in the time measuring.

The measuring equipment of 13. light emitting diode photoelectric characteristics as claimed in claim 1, is characterized in that: this light accumulation unit is completely coated this light emitting diode to be measured in the time measuring.

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