CN103765585A - Solid-state radiation sensor device with flip-chip mounted solid-state radiation sensor and associated systems and methods - Google Patents

Abstract

The invention discloses a solid state radiation sensor (SSRT) device and a method for manufacturing and using the same. One embodiment of the SSRT device includes: radiation sensors (e.g., light emitting diodes); and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. Leads may be positioned at a backside of the transmissive support member. The radiation sensor may be flip-chip mounted to the transmissive support assembly. For example, a solder connection may exist between a contact of the radiation sensor and the lead of the transmissive support assembly.

Description

Solid-state radiation sensor device with flip-chip mounted solid-state radiation sensor and associated systems and methods

technical field

The technology relates to a solid-state radiation sensor device and a manufacturing method of the solid-state radiation sensor device. In particular, the present technology relates to solid state radiation sensor devices having flip chip mounted solid state radiation sensors and associated systems and methods.

Background technique

Many mobile electronic devices (such as mobile phones, personal digital assistants, digital cameras, and MP3 players) and other devices (such as televisions, computer monitors, and automobiles) incorporate light-emitting diodes (“LEDs”), organic light-emitting diodes (“OLEDs”) , Polymer Light Emitting Diodes ("PLEDs") and other Solid State Radiation Sensors ("SSRTs") are used for backlighting. SSRTs are also used for signage, interior lighting, exterior lighting, and other types of general lighting. To operate in such applications, SSRTs typically must be packaged with other components to form an SSRT device. A conventional SSRT device may include, for example, a backside support for the SSRT such as a mount, a heat sink, device leads, wires connecting the SSRT to the device leads, optical components such as phosphors, and an encapsulant. Each of these components may provide one or more of several functions, including: (1) supporting the SSRT; (2) protecting the SSRT; (3) dissipating heat during operation of the SSRT; (4) modifying the SSRT from the SSRT (for example, changing the color emitted by the SSRT); and (5) integrating the SSRT with the circuits of the external system.

Conventional flip-chip mounting methods typically connect solid-state components to other device components without the use of wires or other wires. Typically, in these methods, processing equipment deposits solder bumps onto contacts of solid state components, aligns the solder bumps with electrodes of other device components, places the solder bumps on corresponding electrodes of other device components. electrodes and reflow the solder bumps. Underfill material is typically placed in the space between the installed solid state components and other device components.

Conventional SSRTs are connected to other device components using wire bonding (as opposed to flip-chip mounting). However, wire bonding has several disadvantages. For example, wiring requires a lot of physical space. This can become a problem in miniaturized applications and applications where multiple SSRTs are tightly packed. In addition, wiring formation is a complicated process requiring time spent on expensive equipment. Once formed, the wiring becomes one of the least reliable parts of the SSRT package. For example, differential thermal expansion of the wire and the SSRT can stress the wire over time and eventually lead to failure. In view of these and/or other deficiencies of conventional SSRT devices, there remains a need for innovation in this area.

Description of drawings

Many aspects of the invention can be better understood with reference to the following drawings. Components in the drawings are not necessarily drawn to scale. Rather, emphasis is placed upon clearly illustrating the principles of the invention. In the drawings, like reference numerals designate corresponding parts throughout the several views.

Figure 1 is a schematic cross-sectional view of an SSRT device in accordance with an embodiment of the present technology.

2 is a schematic cross-sectional view of a radiation sensor within the SSRT device shown in FIG. 1 .

Figure 3 is a schematic cross-sectional view of a system comprising the SSRT device shown in Figure 1 on an external system mount of a primary assembly.

4 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

5 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

6 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

7 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

8 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

9 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

10 is a schematic cross-sectional view of an SSRT device according to another embodiment of the present technology.

11A-11E are schematic cross-sectional views illustrating the formation process of an SSRT device in accordance with an embodiment of the present technology.

Detailed ways

Specific details of several embodiments of solid state sensor ("SSRT") devices and their associated systems and methods are described below. The terms "SSRT" and "radiation sensor" generally refer to a die or other structure that includes semiconductor material as an active medium to convert electrical energy into electromagnetic radiation in the visible, ultraviolet, infrared, and/or other spectra. For example, SSRTs include solid state light emitters (eg, LEDs, laser diodes, etc.) and/or sources of emission other than filaments, plasmas, or gases. Alternatively, an SSRT may comprise a solid-state device that converts electromagnetic radiation into electricity. Additionally, the term "substrate" may refer to a wafer-level substrate or a singulated device-level substrate, depending on the context in which it is used. Those skilled in the relevant art will also appreciate that the technology may have additional embodiments and that the technology may be practiced without several of the details of the embodiments described below with reference to FIGS. 1-11 .

In some applications, many of the functions encapsulated by conventional SSRTs are unnecessary. For example, some conventional SSRT devices are incorporated into systems with components for adequate support, protection, and heat dissipation, rendering such components of conventional SSRT packages redundant. Additionally, certain components of conventional SSRT packages can cause reliability issues. For example, SSRTs operate at high temperatures and differential expansion and contraction of the different components of the SSRT can lead to connection failures between the SSRT and wires (which are typically used to connect the SSRT to device leads). Several embodiments of the present technology eliminate the need for wiring and unnecessary packaging components, while retaining full functionality with flip-chip mounting.

Figure 1 is a schematic cross-sectional view of an SSRT device 100 in accordance with an embodiment of the present technology. In one embodiment, SSRT device 100 includes: a radiation sensor 102, which is described in more detail in FIG. 2; and a transmissive support assembly 104, which is electrically and mechanically coupled to the radiation sensor by flip-chip mounting. At least a portion of support assembly 104 is sufficiently transmissive to radiation generated or received by radiation sensor 102 . The transmissive support assembly 104 is also sufficiently rigid, or mechanically strong, such that it protects and supports the radiation sensor 102 during handling and implementation. Conventional radiation sensors and other solid-state components are typically flip-chip mounted to leads on an opaque support structure. In contrast, as shown in FIG. 1 , embodiments of the present technology may include a radiation sensor 102 flip-chip mounted to an at least partially transmissive structure, such as a transmissive support assembly 104 . This configuration eliminates the need for wire bonding and/or backside support, while still providing optical modification and circuit compatibility with external systems.

As shown in FIG. 2 , radiation sensor 102 includes a sensor structure 106 having a first semiconductor material 108 , an active region 110 and a second semiconductor material 112 . The first semiconductor material 108 may be a P-type semiconductor material, such as P-type gallium nitride (“P-GaN”). The second semiconductor material 112 can be an N-type semiconductor material, such as N-type gallium nitride (“N-GaN”). The first semiconductor material 108 and the second semiconductor material 112 may individually include gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), gallium (III) phosphide in addition to N-GaN (GaP), zinc selenide (ZnSe), boron nitride (BN), aluminum gallium nitride (AlGaN) and/or at least one of other suitable semiconductor materials, or at least one of the above is substituted for N- GaN. Active region 110 may include single quantum wells ("SQW"), multiple quantum wells ("MQW"), and/or bulk semiconductor material. The term "bulk semiconductor material" generally refers to a single grain of semiconductor material, such as indium gallium nitride ("InGaN"), having a thickness between about 10 nanometers and about 500 nanometers. In some embodiments, the active region 110 may comprise InGaN SQW, MQW or gallium nitride/indium gallium nitride (GaN/InGaN) bulk material. In other embodiments, the active region 110 may include aluminum gallium indium phosphide (AlGaInP), aluminum gallium indium nitride (AlGaInN), and/or other suitable materials or configurations.

The radiation sensor 102 illustrated in FIG. 2 is of the lateral type and includes a first contact 114 and a second contact 116 connected to the first semiconductor material 108 and the second semiconductor material 112 , respectively. The first contact 114 and the second contact 116 may include metals such as nickel (Ni), silver (Ag), copper (Cu), aluminum (Al) and tungsten (W). The dielectric material 118 isolates the second contact 116 from the first semiconductor material 108 and the active region 110 . The dielectric material 118 may include silicon dioxide (SiO ₂ ) and/or silicon nitride (SiN). The radiation sensor 102 may also include a carrier substrate 120 at the second semiconductor material 112 . The carrier substrate 120 can be, for example, a metal such as nickel (Ni) or gold (Au), silicon, aluminum nitride, or sapphire. The radiation sensor 102 has an active side 122 and a backside 124 . To improve emission from the active side 122 when the carrier substrate 120 is not reflective, a reflector, for example one comprising a metal such as nickel (Ni) or gold (Au), can be positioned between the second semiconductor material 112 and between the carrier substrates 120 .

Although embodiments of the disclosed technology have been described in connection with the particular radiation sensor 102 shown in FIG. vertical and lateral radiation sensors) and radiation sensors of various sizes and shapes). Embodiments of the present technology may also be used with a single radiation sensor or with multiple radiation sensors, such as one or more radiation sensor arrays. The carrier substrate 120 is also optional. If present, the carrier substrate 120 is typically located on the backside 124 of the radiation sensor 102 (as in the radiation sensor shown in FIG. 2 ), but in some cases the carrier substrate may be located in the role of the radiation sensor. on side 122. When the carrier substrate 120 is positioned on the active side 122 of the radiation sensor 102, the carrier substrate 120 may be made of a transparent material such as sapphire.

In several embodiments of the present technology, backside 124 of radiation sensor 102 is the outer surface of SSRT device 100 . This is different from conventional SSRT devices where the SSRT is completely enclosed within the package. With this in mind, it may be effective to incorporate an SSRT 100 having a carrier substrate 120 made of a material well suited for direct exposure to external systems, such as a material with good corrosion resistance and durability. It may also be effective for the carrier substrate 120 to comprise a material with high thermal conductivity to improve heat dissipation. Examples of materials that are particularly suitable for carrier substrate 120 include gold (Au) and aluminum nitride (AlN).

Referring back to FIG. 1 , the illustrated embodiment of the SSRT device 100 further includes an underfill 126 between the radiation sensor 102 and the transmissive support assembly 104 . The transmissive support assembly 104 includes a transmissive support member 128 and an edge reflector 130 . The transmissive support member 128 may comprise a matrix material 132, such as a polymeric material, and a transducer material 134, such as cerium(III) doped yttrium aluminum garnet (YAG), at a concentration in the matrix material to emit light from color range from green to yellow to red). In other embodiments, the converter material 134 may comprise neodymium-doped YAG, neodymium-chromium double-doped YAG, erbium-doped YAG, ytterbium-doped YAG, neodymium-cerium double-doped YAG, holmium-chromium-thulium triple-doped YAG, thulium-doped YAG, chromium-doped ( IV) YAG, dysprosium-doped YAG, samarium-doped YAG, terbium-doped YAG and/or other suitable wavelength conversion materials. Emission (eg, light) from sensor structure 106 (FIG. 2) may illuminate converter material 134, and the illuminated converter material may emit light with a certain quality (eg, color, warmth, intensity, etc.). The edge reflectors 130 can prevent or reduce light piping and emission losses through the edges of the transmissive support assembly 104 . Suitable materials for the edge reflector 130 include silver (Ag) and gold (Au).

In the embodiment of the SSRT device 100 illustrated in FIG. 1 , the transmissive support assembly 104 includes a single transmissive support member 128 and a single type of converter material 134 in the transmissive support member. Other embodiments may have more than one transmissive support member 128 within the transmissive support assembly 104 . Each transmissive support member 128 may have no converter material 134 , one converter material or multiple converter materials. For example, several embodiments of the present technology may be configured as a red-white-green-blue ("RWGB") device. The transmissive support assembly 104 of such embodiments may include three converter materials 134 . The first converter material 134 may be a yellow phosphor that mixes with the blue light emitted by the sensor structure 106 to form white pixels. The second and third converter materials 134 may be red and green phosphors, respectively, that fully convert blue light from the sensor structure to form corresponding red and green pixels. The sensor structure 106 can produce blue emission without conversion. RWGB devices can be used in displays, monitors, televisions, and/or other suitable multi-color applications.

The transmissive support assembly 104 may also include conductive routing with a plurality of leads 136 patterned on the transmissive support member 128 . For example, the leads 136 may be copper (Cu) or aluminum (Al) traces with pads photopatterned on the backside 138 of the transmissive support member 128 . In several embodiments, the leads each include two or more pads sized to receive solder bumps and traces between the pads. The transmissive support assembly 104 may further include a solder mask 140 patterned on the leads 136 and the backside 138 of the transmissive support member 128 to have openings on the pads of the leads 136 . Solder mask 140 may include a dielectric material such as silicon dioxide (SiO ₂ ), silicon nitride (SiN), and/or other suitable dielectric materials.

Radiation sensor 102 is operatively packaged on transmissive support assembly 104 . For example, SSRT device 100 may include: solder connections 142 between bond pads (not shown) on active side 122 of radiation sensor 102 and leads 136 on backside 138 of transmissive support member 128; and external The solder bumps 144 are partially isolated within the openings of the solder mask 140 . In the illustrated embodiment, the external solder bump 144 is the only external electrode of the SSRT device 100 . Other embodiments may have additional external electrodes or another electrode configuration. For example, in several embodiments, the radiation sensor 102 is a vertical device and the backside 124 of the radiation sensor includes additional external electrodes. These embodiments may include additional solder on the backside 124 of the radiation sensor 102 to facilitate electrical connection of the backside of the radiation sensor to external systems.

Solder connection 142 and outer solder bump 144 may comprise any solder material known in the art of semiconductor manufacturing. In several embodiments, solder connections 142 and outer solder bumps 144 include gold (Au), nickel (Ni), copper (Cu), aluminum (Al), tungsten (W), and/or other suitable conductive materials. Solder connections 142 and outer solder bumps 144 may also include conductive polymers such as polyacetylene, polypyrrole, or polyaniline. Since the solder connections 142 and leads 136 can be positioned on the active side 122 of the radiation sensor 102, the output from the SSRT device 100 can potentially be improved through the use of transparent conductive materials. For example, solder connections 142 and/or leads 136 may comprise indium tin oxide (ITO).

The underfill 126 surrounds the solder connection 142 and occupies the remaining space between the radiation sensor 102 and the transmissive support assembly 104 . The underfill 126 can, for example, absorb stresses caused by differential thermal expansion and contraction of the radiation sensor 102 and the transmissive support assembly 104 . This prevents this expansion and contraction from causing damage to the solder connection 142, which could lead to device failure. Suitable materials for the underfill 126 include substantially light-transmitting materials, such as substantially light-transmitting silicone or substantially light-transmitting epoxy. In several embodiments, the underfill material is the same as the matrix material 132 of the one or more transmissive support components 128 of the transmissive support assembly 104 .

FIG. 3 illustrates the SSRT device 100 connected to one example of an external system mount 146 of a primary component 147 , such as a light, appliance, vehicle, or other product that may be integrated with the SSRT device 100 . The external system mount 146 includes a substrate 148 , a mount 150 and two system electrodes 152 . To connect SSRT device 100 to external system mount 146 , the SSRT device may be placed on the external system mount such that external solder bumps 144 are aligned with system electrodes 152 . Next, the outer solder bumps 144 may be reflowed. Radiation sensor 102 may rest on mount 150 , be bonded to the mount (eg, via an adhesive), or be suspended near the mount. In some external system mounts 146 , mount 150 includes a bracket or other recess for supporting radiation sensor 102 . The external system mount 146 may also not include the mount 150 and the solder joint formed by the reflow of the external solder bump 144 may provide mechanical support to the SSRT device 100 .

In the illustrated SSRT device 100 with side-facing radiation sensor 102, one of the outer solder bumps 144 is a P-type connection and the other outer solder bump is an N-type connection. As shown in FIG. 3, these external solder bumps 144 are connected to P-type (+) and N-type (-) system electrodes, respectively. In embodiments where radiation sensor 102 includes backside contacts, mount 150 may include additional system electrodes. For example, in embodiments including vertical radiation sensors 102 , the backside contacts of the radiation sensors may be soldered to system electrodes on mount 150 or in place of mount 150 . In such embodiments, the system electrode connected to the backside 124 of the radiation sensor 102 can be P-type and the other electrodes can be N-type, or the system electrode connected to the backside of the radiation sensor can be N-type and the other electrodes can be N-type. It is P type.

The first contact 114 and the second contact 116 of the radiation sensor 102 shown in FIG. 2 are substantially coplanar on the active side 122 of the radiation sensor. This configuration facilitates flip-chip mounting because two or more substantially coplanar contacts on one surface can be connected to two on the other surface using solder connections 142 having substantially the same size. or two or more substantially coplanar leads. However, this feature is not required. Several embodiments include radiation sensor 102 with non-coplanar contacts on active side 122 . In these embodiments, different sized solder connections 142 may exist between the radiation sensor 102 and the leads 136 of the transmissive support assembly 104 . Alternatively, other portions of SSRT device 100 may be formed asymmetrically to accommodate different contact locations on radiation sensor 102 . For example, leads 136 may have different thicknesses or be placed on one or more spacer layers.

The outer solder bumps 144 of the SSRT device 100 are substantially symmetrical and extend away from the transmissive support assembly 104 to a plane that is substantially flush with the backside 124 of the radiation sensor 102 . This configuration is suitable for connecting SSRT device 100 to an external system mount 146 (where mount 150 is substantially coplanar with system electrode 152, such as external system mount 146 shown in FIG. 3). For connection to external system mounts 146 having different configurations, external solder bumps 144 may be of different sizes to, for example, extend to different vertical positions relative to backside 124 of radiation sensor 102 . Other portions of the SSRT device 100 may also be configured differently with features such as those described above for receiving contacts of radiation sensors 102 having different vertical positions. For example, the horizontal position of the external solder bumps 144 can be easily modified by lengthening or shortening the leads 136 . For greater flexibility, the outer solder bumps 144 can also be replaced with other types of electrical connections, such as wires. The wires used to replace the external solder bumps 144 may be more reliable than the wires used in conventional SSRT devices to connect the SSRT to other device components. Wires used in place of outer solder bumps 144, for example, may be similar in composition to leads 136, and thus not subject to stresses caused by differential thermal expansion.

In several embodiments of the present technology, the transmissive support assembly 104 is formed separate from the radiation sensor 102 . In contrast, the transmissive components of many conventional SSRT devices are formed directly on the radiation sensor (eg, by depositing materials onto the surface of the radiation sensor). Forming the transmissive support assembly 104 separately may be advantageous because certain forming processes, such as molding, are difficult to perform directly on the radiation sensor surface. In particular, molding can be used to form portions of the transmissive support assembly 104 (such as the transmissive support member 128 shown in FIG. 1 ) having various effective shapes and surface properties. In conventional designs, the transmissive elements formed directly on the radiation sensor are limited in size and shape. In contrast, embodiments of the present technology may include a transmissive support member 128 that is sized and shaped independently of the size and shape of radiation sensors 102 or the number of radiation sensors in the array. Thus, the size and shape of the transmissive support member 128 of these embodiments may generally be set according to the specifications of the secondary optical components or other structures of the external system into which the SSRT device 100 will be incorporated. For example, some external systems include reflector cavities, Fresnel lenses, and/or pincushion lenses to modify the emission from the SSRT device 100 . The transmissive support member 128 of several embodiments of the present technology may be sized and shaped according to the specifications of such structures such that the SSRT device 100 is effectively integrated with such structures. For example, the transmissive support member 128 of several embodiments of the present technology is sized and shaped to support or fit within certain components of the external system, such as certain secondary optical components.

As shown, for example, in FIG. 1 , the transmissive support assembly 104 and the radiation sensor 102 may be separated by a solder connection 142 and an underfill material 126 in the intervening space. Separating the transmissive support member 128 from the radiation sensor 102 in this manner may be advantageous. For example, it may be difficult to form such transmissive components that are relatively thick, uniform in size, and/or of uniform concentration of converters when such transmissive components are formed directly on the radiation sensor surface. Multiple radiation sensors in an array may also be mounted to a transmissive support member 128 spaced apart from the radiation sensor array. Additionally, some materials effective for use in transmissive components, such as certain polymers, may darken or otherwise be damaged by heat generated from direct contact with the radiation sensor during operation. Isolating these materials from the radiation sensor prevents this damage from occurring.

4 illustrates an SSRT device 200 comprising a transmissive support assembly 202 having a transmissive support member 204 that is substantially hemispherical and extends over substantially the entire surface of the SSRT device. 5 illustrates an SSRT device 250 comprising a transmissive support assembly 252 having a transmissive support member 254 that is substantially flat near the edges and substantially hemispherical over the central portion of the SSRT device.

In the SSRT devices 200 , 250 of FIGS. 4 and 5 , the transmissive support members 204 , 254 include a substantially uniform distribution of the converter material 134 . In other embodiments, the distribution of converter material 134 in the transmissive support member may not be uniform. FIG. 6 illustrates an SSRT device 300 similar to SSRT device 200 of FIG. 4 , but wherein the transmissive support assembly 302 has a transmissive support member 304 comprising a non-uniform distribution of converter material 134 . FIG. 7 illustrates an SSRT device 350 similar to SSRT device 250 of FIG. 5 , but in which the transmissive support assembly 352 has a transmissive support member 354 comprising a non-uniform distribution of converter material 134 . The transmissive support member 304 of FIG. 6 comprises a first portion 306 having a low concentration of converter material 134 or no converter material and a second portion 308 having a relatively higher concentration of converter material. Similarly, the transmissive support member 354 of FIG. 7 comprises a first portion 356 having a low concentration of converter material 134 or no converter material and a second portion 358 having a relatively higher concentration of converter material. In FIGS. 6 and 7, the boundary between the first portion 306, 356 of the transmissive support member 308, 358 and the second portion 308, 358 of the transmissive support member 304, 354 is indicated by a dashed line because the first and second portions within the same transmissive support. Other embodiments may comprise separate transmissive support members with different concentrations of converter material, eg similar to the first portion 306, 356 and second portion 308, 358 of the transmissive support members 304, 354 shown in FIGS. 6 and 7 Separate transmissive support components.

FIG. 8 illustrates an SSRT device 400 having a transmissive support assembly 402 comprising a first transmissive support member 404 and a second transmissive support member 406 . The first transmissive support member 404 contains converter material 134 . The second transmissive support member 406 is a transition layer positioned between the radiation sensor 102 and the first transmissive support member 404 . Other embodiments may include a transition layer as the only transmissive support component, transition layers at different locations within the transmissive support assembly, or multiple transition layers within the transmissive support assembly. The second transmissive support member 406 may be made of a material having a refractive index intermediate that of the sensor structure 106 of the radiation sensor 102 and the first transmissive support member 404 positioned farther from the radiation sensor than the second transmissive support member. between the refractive indices. In several embodiments, the transmissive support member, which is the transition layer, has a refractive index of from about 1.6 to about 1.9. Transmission from radiation sensor 102 through this material generally improves the output of SSRT device 400 by reducing refraction and its associated back reflections. Examples of materials suitable for the second transmissive support member 406 include glass, triacetyl cellulose, polyethylene terephthalate, and polycarbonate.

In several embodiments of the present technology, the outer surface of the transmissive support assembly or the interface within the transmissive support assembly can be roughened and/or textured. FIG. 9 illustrates an SSRT device 450 having a transmissive support assembly 452 comprising a transmissive support member 454 having a textured surface 456 . Inclusion of a textured surface such as textured surface 456 may improve output from SSRT device 450 by, for example, reducing total internal reflection within transmissive support assembly 452 . Texturing can include regular patterning, random patterning, micropatterning and/or macropatterning. Texturing methods include photolithography, etching, and abrasion after forming the transmissive support member. Molding (discussed in more detail below) can also be used to modify the surface properties of the transmissive support members in embodiments of the present technology.

Figure 10 illustrates an SSRT device 500 comprising an encapsulant 502 surrounding a majority of the backside of the SSRT device. The encapsulant 502 can protect the radiation sensor 102 and other portions of the SSRT device 500 as well as dissipate heat from the radiation sensor during operation. Materials suitable for encapsulant 502 include polymeric materials such as transparent and opaque epoxies. The outer solder bump 504 is larger than the outer solder bump 144 shown in FIGS. 1 and 3-9 so as to extend beyond the outer surface of the encapsulant 502 . When connecting SSRT device 500 to external system mount 146, the bottom surface of encapsulant 502 may rest on mount 150, be bonded to the mount (eg, via an adhesive), or be suspended near the mount. If radiation sensor 102 includes backside contacts, electrodes may extend through encapsulant 502 to connect to external electrodes.

11A-11E illustrate the formation process of an SSRT device 100 in accordance with an embodiment of the present technology. FIG. 11A shows the stages of the process after the transmissive support member 128 has been formed on the formation substrate 550 . Forming substrate 550 may be any substrate that is rigid enough or mechanically strong enough to support transmissive support member 128 . For example, forming substrate 550 may be a silicon wafer, polymer, glass, or other type of wafer or sheet. The transmissive support member 128 may be formed on the forming substrate 550 by techniques such as molding, inkjet, spin coating, chemical vapor deposition ("CVD"), or physical vapor deposition ("PVD"). Furthermore, molding is generally well suited for making thicker transmissive support members 128, such as transmissive support members having a thickness greater than about 150 microns. Spin-coating and other deposition processes are generally more suitable for making thinner transmissive support members 128, such as those having a thickness of less than about 150 microns. A thicker transmissive support member 128 with converter material 134 can generally achieve the same degree of conversion as a thinner transmissive support member with a lower concentration of converter material. Thus, a thicker transmissive support member 128 with converter material 134 may be used when a thinner transmissive support member requires a converter material concentration above saturation. As an alternative to fabricating the transmissive support member 128 with converter material 134, prefabricated transmissive support members with converter material are commercially available from, for example, Shin-Etsu Chemical Co., Ltd. (Tokyo, Japan).

In several embodiments of the present technology, precursor materials are deposited on the forming substrate 550 and then cured (eg, by ultrasound or heat) to form the one or more transmissive support members 128 of the transmissive support assembly 104 . Suitable precursor materials include liquids and/or powders as well as polymeric and/or non-polymeric materials. A suitable precursor material for the transmissive support member 128 with converter material 134 comprises an epoxy resin containing phosphor particles. Precursor materials may also be molded (eg, injection molded) rather than simply deposited. If molding is used, the forming substrate 550 may be part of a mold. Molding allows for the formation of transmissive support members of various shapes and sizes, such as the transmissive support members 128 , 204 , 254 , 304 , 354 , 404 , 406 shown in FIGS. 1 and 4-8 . Molding can also be used to form a transmissive support member with different surface properties, such as the transmissive support member 454 (which has a textured surface 456 ) shown in FIG. 9 . For example, a textured pattern can be incorporated into a portion of the mold.

Several molding techniques may be used to form transmissive support members with different portions and different concentrations of converter material 134 , such as the transmissive support members 304 , 354 of FIGS. 6 and 7 . For example, the precursor material may be molded and then allowed to rest during the pre-cure cycle while gravity causes the particles of converter material 134 to settle. Using gravity, the orientation of the molded precursor material during the pre-cure cycle with respect to the direction of gravity determines the configuration of the final transmissive support member. Alternatively, the molded precursor material can be placed in a centrifuge, and the orientation of the molded precursor material relative to the direction of centrifugal force during the cycle prior to curing determines the configuration of the final transmissive support member. Machines suitable for molding the transmissive supports used in embodiments of the present technology include models LCM1010 and FFT1030W from TOWA Corporation (Kyoto, Japan).

FIG. 11B shows a stage of the process after leads 136 have been formed on transmissive support member 128 , and FIG. 11C shows a stage after solder mask 140 has been formed on leads 136 . Leads 136 and solder mask 140 may be formed using any deposition and patterning technique known in the art of semiconductor fabrication, such as CVD, PVD, or atomic layer deposition ("ALD") followed by photolithography.

Separately from the steps shown in FIGS. 11A-11C , solder balls are deposited onto the contacts on the active side 122 of the radiation sensor 102 . Next, radiation sensor 102 is flipped over and placed on the structure shown in FIG. 11C with the radiation sensor's solder balls aligned with leads 136 . Next, the solder is reflowed (eg, by ultrasound or heat) to produce a structure with solder connection 142 shown in FIG. 11D . Alternatively, a solder ball may be placed on lead 136 and radiation sensor 102 placed onto the solder ball. As shown in FIG. 11E , an underfill 126 is then introduced into the region between the transmissive support member 128 and the radiation sensor 102 . This can be done, for example, by injecting heated underfill material from the side of the structure shown in FIG. 11D and then curing the underfill material (eg, via microwave radiation). Next, external solder bumps 144 are deposited in the openings of solder mask 140 . Finally, the formation substrate 550 is separated from the transmissive support member 128 to form the SSRT device 100 shown in FIG. 1 . Although not illustrated in FIGS. 11A through 11E , a reflective material such as silver (Ag )) is deposited into the trench to form the edge reflector 130. Once complete, the array of SSRT devices can be cut along the center of the trench such that a portion of the reflective material remains on the edge of each SSRT device.

The SSRT device 100 according to embodiments of the present technology may be manufactured using various processes other than those described with reference to FIGS. 11A to 11E . For example, in several embodiments, forming substrate 550 is not used. Instead, the SSRT device 100 may be formed on a pre-formed self-supporting transmissive support member 128 (eg, a transmissive support member comprising converter material 134 or as a transition layer). When using the forming substrate 550, the forming substrate may be removed at various times during the process. For example, transmissive support assembly 104 may be formed on forming substrate 550 and then removed from the forming substrate prior to mounting radiation sensor 102 . Additionally, radiation sensor 102 may be mounted to transmissive support assembly 104 or the transmissive support assembly may be mounted to the radiation sensor.

From the foregoing it will be appreciated that, although specific embodiments of the technology have been described herein for purposes of illustration, various modifications may be made without departing from the technology. For example, the embodiment illustrated in FIGS. 1-11 includes two solder connections 142 . Other embodiments of the present technology may include one, three, four, five or greater numbers of solder connections 142 . Certain aspects of the technology described in the context of a particular embodiment may be combined or eliminated in other embodiments. For example, the transmissive support assembly 104 of the embodiment shown in FIG. 1 may include the second transmissive support member 406 of the embodiment shown in FIG. 8 . Furthermore, while advantages associated with certain embodiments of the present technology have been described in the context of those embodiments, other embodiments may exhibit such advantages as well, and not necessarily all embodiments need exhibit to fall within the scope of the technology such advantages within. Accordingly, the present invention and its associated technology may encompass other embodiments not explicitly shown or described herein.

Claims (24)

1. a solid state radiation transducer SSRT device, it comprises:

Radiation transducer, it comprises the active region between the first semi-conducting material, the second semi-conducting material and described the first semi-conducting material and described the second semi-conducting material; And

Transmission support assembly, it is attached to described radiation transducer, wherein said transmission support assembly comprises the transmission support component with dorsal part, described transmission support assembly makes through location arrive at or pass described transmission support assembly from the described dorsal part place of the described transmission support component of being transmitted in of described radiation transducer, and described transmission support assembly comprises the lead-in wire being electrically connected to the contact of described radiation transducer.

2. SSRT device according to claim 1, wherein said transmission support component has veining side.

3. SSRT device according to claim 1, at least a portion of a side of wherein said transmission support component is convex.

4. SSRT device according to claim 1, wherein said radiation transducer chip upside-down mounting type is arranged on described transmission support assembly.

5. SSRT device according to claim 1, it further comprises the underfill of printing opacity in fact between described radiation transducer and described transmission support assembly.

6. SSRT device according to claim 1, it further comprises that the first scolder connects and the second scolder connects, wherein said lead-in wire is the first lead-in wire, described contact is the first contact, described transmission support assembly further comprises the second lead-in wire, described radiation transducer further comprises the second contact, described the first scolder connects described the first lead-in wire that described first contact of described radiation transducer is connected to described transmission support assembly, described the second scolder connects described the second lead-in wire that described second contact of described radiation transducer is connected to described transmission support assembly, and described the first scolder connect with described the first lead-in wire between interface with described the second scolder, be connected and the described second interface between going between coplanar in fact.

7. SSRT device according to claim 1, wherein said transmission support component is the first transmission support component, described transmission support assembly comprises the second transmission support component being positioned between described the first transmission support component and described radiation transducer, described the first transmission support component comprises converter material, and described the second transmission support component has the refractive index between the refractive index of described radiation transducer and the refractive index of described the first transmission support component.

8. SSRT device according to claim 7, wherein said the second transmission support component has from approximately 1.6 to approximately 1.9 refractive index.

9. SSRT device according to claim 1, wherein said transmission support component comprises intramatrical converter material.

10. SSRT device according to claim 9, the first that wherein said transmission support component comprises the converter material with the first concentration and the second portion with the converter material of the second concentration, and described the first converter material concentration is higher than described the second converter material concentration.

11. 1 kinds of solid state sensor SSRT devices, it comprises that chip upside-down mounting type is installed to the radiation transducer of transmission support assembly, described radiation transducer has the active region between the first semi-conducting material, the second semi-conducting material, described the first semi-conducting material and described the second semi-conducting material, and is electrically connected to described the first semi-conducting material and is surface mounted to the contact of the lead-in wire of described transmission support assembly.

12. SSRT devices according to claim 11, the transmission of wherein said transmission support assembly is arrived at or from the radiation of described radiation transducer.

13. SSRT devices according to claim 11, wherein said transmission support assembly comprises converter material.

14. SSRT devices according to claim 11, wherein said radiation transducer is light-emitting diode.

15. SSRT devices according to claim 11, wherein said radiation transducer is photovoltaic cell.

16. 1 kinds of methods of manufacturing solid state radiation transducer SSRT device, it comprises radiation transducer chip upside-down mounting type is installed on transmission support assembly, the lead-in wire at the described dorsal part place that the working flank that makes described radiation transducer is electrically coupled to described transmission support component to the dorsal part of transmission support component and the contact of described radiation transducer of described transmission support assembly.

17. methods according to claim 16, it further comprises printing opacity underfill is in fact placed between described radiation transducer and described transmission support component.

18. methods according to claim 16, wherein said transmission support component is the first transmission support component, described transmission support assembly comprises the second transmission support component, described the first transmission support component comprises converter material, described the second transmission support component has the refractive index between the refractive index of described radiation transducer and the refractive index of described the first transmission support component, and described radiation transducer chip upside-down mounting type is installed on described transmission support assembly and comprises described radiation transducer chip upside-down mounting type is installed on described transmission support assembly described the second transmission support component is positioned between described radiation transducer and described the first transmission support component.

19. methods according to claim 16, it further comprises the described transmission support component of formation, wherein form described transmission support component and comprise the persursor material rotary coating that comprises the converter material in host material and described host material to substrate, and solidify described persursor material.

20. methods according to claim 16, it further comprises the described transmission support component of formation, wherein forms described transmission support component and comprises a side veining that makes described transmission support component.

21. methods according to claim 16, it further comprises the described transmission support component of formation, wherein forms described transmission support component and comprises the molded persursor material that comprises the converter material in host material and described host material.

22. methods according to claim 21, wherein molded described persursor material comprises described persursor material is incorporated in mould, wherein said mould comprises texturizing surfaces, and described transmission support component comprises the texturizing surfaces corresponding with the described texturizing surfaces of described mould.

23. methods according to claim 21, wherein molded described persursor material comprises described persursor material is incorporated in mould, and wherein said mould comprises concave surface, and described transmission support component comprises the convex surface corresponding with the described concave surface of described mould.

24. methods according to claim 21, it further comprises and solidifies described persursor material and assembled described converter material before solidifying described persursor material, wherein assembles described converter material and comprises the sedimentation or power is applied to described persursor material so that the described persursor material displacement in described host material under Action of Gravity Field of the described persursor material that allows in described host material.

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