KR102739650B1 - Lighting emitting module - Google Patents

Abstract

The light-emitting module disclosed in the embodiment comprises: a light-emitting structure having a plurality of semiconductor layers; a light-emitting chip having a first electrode and a second electrode under the light-emitting structure; a support substrate having a first lead electrode corresponding to the first electrode, and a second lead electrode corresponding to the second electrode; a first bonding member between the first electrode and the first lead electrode; and a second bonding member between the second electrode and the second lead electrode, wherein the first bonding member comprises a metal solder material, and the second bonding member comprises a material having a melting point temperature lower than a melting point temperature of the first bonding member and a melting time longer than a melting time of the first bonding member.

Description

LIGHTING EMITTING MODULE

The present invention relates to a light-emitting module.

The present invention relates to a light emitting module having different bonding members.

Light-emitting diodes (LEDs) use semiconductor elements to generate light, so they consume very little power compared to incandescent lamps that generate light by heating tungsten, or fluorescent lamps that generate light by colliding ultraviolet rays generated through high-voltage discharge with a phosphor. Light-emitting elements, such as light-emitting diodes (LEDs), are gaining attention as next-generation light sources, replacing existing fluorescent and incandescent lamps.

In addition, light-emitting diodes generate light by utilizing the potential gap of semiconductor elements, so they have a longer lifespan, faster response characteristics, and are environmentally friendly compared to existing light sources. Accordingly, much research is being conducted to replace existing light sources with light-emitting diodes, and light-emitting diodes are increasingly being used as light sources for lighting devices such as various lamps, liquid crystal displays, billboards, streetlights, and headlights used indoors and outdoors.

The embodiment provides a light emitting module in which different bonding members are arranged between a light emitting chip and a circuit board.

An embodiment can provide a light-emitting module capable of preventing alignment errors of light-emitting chips on a circuit board.

The embodiment provides a light emitting module connected to a circuit board through a bonding member having a metal solder under a light emitting chip and a bonding member having a sintered metal.

The embodiment provides a light-emitting module in which a plurality of bonding members having the same polarity or different polarities are arranged on the lower side of a light-emitting chip and are made of materials having different melting temperatures.

A light-emitting module according to an embodiment comprises: a light-emitting structure having a plurality of semiconductor layers; a light-emitting chip having a first electrode and a second electrode under the light-emitting structure; a support substrate having a first lead electrode corresponding to the first electrode, and a second lead electrode corresponding to the second electrode; a first bonding member between the first electrode and the first lead electrode; and a second bonding member between the second electrode and the second lead electrode, wherein the first bonding member includes a metal solder material, and the second bonding member includes a material having a melting point temperature lower than a melting point temperature of the first bonding member and a melting time longer than a melting time of the first bonding member.

A light-emitting module according to an embodiment comprises: a light-emitting structure having a plurality of semiconductor layers; a light-emitting chip having a conductive support member under the light-emitting structure; a support substrate having a first lead electrode disposed under the light-emitting chip and a second lead electrode spaced apart from the first lead electrode; And a plurality of different bonding members between the conductive support member and the first lead electrode, wherein the first lead electrode includes a first lead pattern disposed under a first region of the support member, a second lead pattern disposed under a second region of the support member, and a third lead pattern disposed under a third region of the support member, and the bonding members include a first bonding member between the first region of the support member and the first lead pattern, a second bonding member between the second region of the support member and the second lead pattern, and a third bonding member between the third region of the support member and the third lead pattern, wherein the first and third bonding members are of the same metal solder material, and the second bonding member includes a material having a melting point temperature lower than a melting point temperature of the first bonding member and a melting time longer than a melting time of the first bonding member.

In an embodiment, the second bonding member may include a sintered metal.

According to an embodiment, a third electrode and a fourth electrode spaced apart from the first and second electrodes are arranged under the light-emitting chip, the second and third electrodes are arranged between the first and fourth electrodes, the circuit board includes third and fourth lead electrodes spaced apart from the first and second lead electrodes and corresponding to the third and fourth electrodes, the second and third lead electrodes are arranged between the first and fourth lead electrodes, a third bonding member is included between the third electrode and the third lead electrode, and a fourth bonding member is included between the fourth electrode and the fourth lead electrode, the third bonding member includes the same material as the second bonding member, the fourth bonding member includes the same material as the first bonding member, the second bonding member includes a sintered metal, the first and second electrodes are connected to one of the first and second polarities of a power source, and the third and fourth electrodes are connected to the other polarity of the power source. Can be connected.

According to an embodiment, the support substrate may include first and second lead frames, at least one connecting electrode connecting the first and second electrodes to the first lead frame, and at least one connecting electrode connecting the third and fourth electrodes to the second lead frame.

In an embodiment, at least one of the first and fourth lead electrodes includes an extension portion extending outwardly from a side surface of the light-emitting chip, and at least one of the first and fourth bonding members can be disposed on the extension portion of at least one of the first and fourth lead electrodes.

According to an embodiment, the light-emitting chip is covered with a light-transmitting member on the support substrate, and the light-transmitting member may include a resin material or a glass material having a temperature higher than the melting point of the metal solder.

In an embodiment, the glass material may include either ZnO-PbO-B ₂ O ₃ or PbO-SiO ₂ -B ₂ O ₃ .

According to an embodiment, the first bonding member may include at least one of Sn-based, Pb-based, Zn-based, and Bi-based, and the second bonding member may include at least one of Ag, Au, Cu, W, Mo, Ta, Nb, Re, and alloys thereof.

The embodiment can prevent misalignment of a light-emitting chip on a circuit board.

The embodiment has the effect of maintaining bonding strength at high temperatures due to component mounting on a circuit board.

The embodiment can stably maintain the alignment position at high temperatures by bonding the light-emitting chip with the sintered metal.

The embodiment shows that the life and temperature characteristics of the light-emitting chip are stable.

The embodiment can reduce alignment errors of multiple LED chips when multiple LED chips are arranged on a circuit board.

The embodiment can prevent alignment errors of light-emitting chips by attaching them to a circuit board using bonding members of different materials, even when other components than the light-emitting chip are mounted on the circuit board.

The reliability of a light-emitting module having at least one light-emitting chip according to an embodiment can be improved.

Figure 1 is a perspective view of a light-emitting module according to the first embodiment.
Figure 2 is a side cross-sectional view of the light emitting module of Figure 1.
Figure 3 is an enlarged view of part A of the light-emitting module of Figure 2.
Figure 4 is a perspective view of a light-emitting module according to the second embodiment.
Figure 5 is a partial cross-sectional side view of the light emitting module of Figure 4.
Figure 6 is a perspective view of a light-emitting module according to the third embodiment.
Figure 7 is a cross-sectional side view of the light emitting module of Figure 6.
Fig. 8 is a cross-sectional side view of a light-emitting module according to the fourth embodiment.
Figure 9 is a perspective view of a light-emitting module according to the fifth embodiment.
Fig. 10 is a cross-sectional view of the BB side of the light-emitting module of Fig. 9.
Fig. 11 is a drawing showing an example of a pattern of a lead electrode of a circuit board corresponding to a light-emitting chip of the light-emitting module of Fig. 10.
Fig. 12 is a cross-sectional side view showing an example of a light-emitting chip of a light-emitting module according to an embodiment.
Fig. 13 is a cross-sectional side view showing another example of a light-emitting chip of a light-emitting module according to an embodiment.
FIG. 14 is a drawing for explaining a state model of self-alignment according to the type of bonding member between a circuit board and a light-emitting chip according to an embodiment.
Figure 15 is a graph comparing the eutectic solder profile and sintering time according to an embodiment.
Figure 16 is an enlarged graph of the eutectic solder profile of Figure 15.

Below, with reference to the attached drawings, embodiments of the present invention are described in detail so that those skilled in the art can easily implement the present invention. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein.

Throughout the specification, when a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless the contrary is specifically stated. When an part, such as a layer, film, region, or plate, is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also when there are other parts in between. Conversely, when an part is said to be "directly on" another part, it means that there are no other parts in between.

Hereinafter, a light-emitting module according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view of a light-emitting module according to a first embodiment, Fig. 2 is a side cross-sectional view of the light-emitting module of Fig. 1, and Fig. 3 is an enlarged view of part A of the light-emitting module of Fig. 2.

Referring to FIGS. 1 to 3, a light-emitting module (100) may include a support substrate (11), a light-emitting chip (31) disposed on the support substrate (11), a molding member (510) disposed on the circuit board (11) and covering the light-emitting chip (31), and a plurality of bonding members (61, 62, 63, 64) disposed between the circuit board (11) and the light-emitting chip (31).

The light-emitting module (100) can have one or more light-emitting chips (31) arranged on a support substrate (11), and when mounting a different component or element (e.g., LED chip) at an aligned position of the light-emitting chip (31), the problem of the chip being misaligned or dislodged can be prevented.

<Support substrate (11)>

The above-described support substrate (11) includes a body (12) made of an insulating material, for example, a ceramic material. The ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). The material of the body (12) in the above-described support substrate (11) may be a metal compound, for example, Al ₂ O ₃ , or AlN, and may preferably include aluminum nitride (AlN) or alumina (Al ₂ O ₃ ), or may include a metal oxide having a thermal conductivity of 140 W/mK or more.

The material of the body (12) in the above support substrate (11) may be formed of, as another example, a resin-based insulating material, for example, a resin material such as polyphthalamide (PPA). The body (12) may be formed of a thermosetting resin including silicone, a modified silicone resin, an epoxy resin, a modified epoxy resin, or a plastic material, or a material having high heat resistance and high light resistance. As another example, an acid anhydride, an antioxidant, a release agent, a light reflective material, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide may be selectively added to the support substrate (11). The body (12) may be formed of at least one selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylic resin, and a urethane resin. The material of the above-mentioned support substrate (11) may be, for example, an epoxy resin composed of triglycidyl isocyanurate, hydrogenated bisphenol A diglycidyl ether, etc., an acid anhydride composed of hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride, etc., and a solid epoxy resin composition in which DBU (1,8-Diazabicyclo(5,4,0)undecene-7) as a curing accelerator and ethylene glycol, titanium oxide pigment, and glass fiber as cocatalysts are added, and a B-stage is partially cured by heating, but is not limited thereto.

As shown in Fig. 2, the support substrate (11) includes a plurality of lead electrodes (21, 22, 23, 24) in an area corresponding to the light-emitting chip (31), and among the plurality of lead electrodes (21, 22, 23, 24), at least two lead electrodes can be arranged under the light-emitting chip (31), and for example, two to four can be selectively arranged. Two or more lead electrodes can be arranged under a single light-emitting chip (31).

The above plurality of lead electrodes (21, 22, 23, 24) include first to fourth lead electrodes (21, 22, 23, 24) arranged in a first direction, and the first to fourth lead electrodes (21, 22, 23, 24) can be arranged to be spaced apart from each other. The second and third lead electrodes (22, 23) can be arranged between the first and fourth lead electrodes (21, 24). The first lead electrode (21) can be arranged adjacent to the first side or the first edge portion of the light-emitting chip (31), and the fourth lead electrode (24) can be arranged adjacent to the second side or the second edge opposite the first side of the light-emitting chip (31). The above-mentioned support substrate (11) may have a length in the first direction that is longer than that in the second direction, and the first direction may be a longitudinal direction or a horizontal direction, and the second direction may be a unidirectional direction or a vertical direction. The above-mentioned support substrate (11) may have a circular shape or a polygonal shape, rather than a rectangular shape.

The first to fourth lead electrodes (21, 22, 23, 24) may be electrically connected to the light-emitting chip (31). The first and second lead electrodes (21, 22) may be connected to a first polarity of a power source, and the third and fourth lead electrodes (23, 24) may be connected to a second polarity of the power source. As another example, the first and third lead electrodes (21, 23) may be of a first polarity, and the second and fourth lead electrodes (22, 24) may be of a second polarity. The first and second lead electrodes (21, 22) may be connected to each other by a pattern of the support substrate (11), and the third and fourth lead electrodes (23, 24) may be connected to each other by a pattern of the support substrate (11).

The above first to fourth lead electrodes (21, 22, 23, 24) may include a plurality of metals, such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), and aluminum (Al), and may be formed in a single layer or multiple layers.

The support substrate (11) may have a protective layer (14) arranged on the upper surface. The protective layer (14) may be formed of an insulating material and may include, for example, a solder resist. The protective layer (14) may be formed of a resin material and, for example, a reflective agent such as a metal oxide may be added to the resin material, but is not limited thereto. The support substrate (11) may prevent electrical interference between the lead electrodes (21, 22, 23, 24) and may improve reflection efficiency on the upper surface.

As shown in FIG. 2, the supporting substrate (11) may include a plurality of connection electrodes (15, 16, 17, 18) therein and a plurality of lead frames (26, 28) on the lower surface. The plurality of connection electrodes (15, 16, 17, 18) may include at least one first connection electrode (15) connected to the first lead electrode (21), at least one second connection electrode (16) connected to the second lead electrode (22), at least one third connection electrode (17) connected to the third lead electrode (23), and at least one fourth connection electrode (18) connected to the fourth lead electrode (24). When the first and second lead electrodes (21, 22) are connected to each other on the supporting substrate (11), one of the first and second connection electrodes (15, 16) may be removed, but is not limited thereto. When the third and fourth lead electrodes (23, 24) are connected to each other on the support substrate (11), one of the third and fourth connection electrodes (17, 18) may be removed, but there is no limitation thereto.

The first lead frame (26) is electrically connected to the first and second connection electrodes (15, 16), and the first and second connection electrodes (15, 16) connect the first lead frame (26) and the first and second lead electrodes (21, 22). The first lead frame (26) may be arranged to vertically overlap the first and second connection electrodes (15, 16) or to vertically overlap the first and second lead electrodes (21, 22).

The second lead frame is electrically connected to the third and fourth connection electrodes, and the third and fourth connection electrodes connect the second lead frame and the third and fourth lead electrodes. The second lead frame may be arranged to vertically overlap the third and fourth connection electrodes or to vertically overlap the third and fourth lead electrodes.

The first to fourth connecting electrodes (15, 16, 17, 18) and the first lead frame (26) and the second lead frame (28) may include a plurality of metals, such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), aluminum (Al), and phosphorus (P), and may be formed in a single layer or multiple layers.

The first to fourth lead electrodes (21, 22, 23, 24) and the first lead frame (26) and the second lead frame (28) may be formed with a thickness ranging from 50 ㎛ to 100 ㎛. If the thickness exceeds the range, the electrical characteristics and thermal conductivity characteristics may deteriorate. A gold (Au) layer is formed on the first lead frame (26) and the second lead frame (28), thereby preventing corrosion due to moisture and improving electrical reliability.

<Light-emitting chip (31)>

The light-emitting chip (31) may be formed of a group 2 to group 6 compound semiconductor, and may be formed of, for example, a group 2-group 6 or group 3-group 5 compound semiconductor. The light-emitting chip (31) may include a light-emitting structure (310) and a light-transmitting substrate (311), as shown in FIG. 3, and the light-emitting structure (311) may include, for example, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and may selectively emit light in a band from an ultraviolet wavelength to a visible light wavelength. The semiconductor layer includes a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x+y≤≤1). The semiconductor layer may be selected from a compound semiconductor of a group III-V element, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP. The light-transmitting substrate (311) may be placed on the light-emitting structure (310) and may be formed of a transparent material. The light-transmitting substrate (311) may use, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga ₂ O ₃ .

The light-emitting chip (31) may have a first conductive semiconductor layer that is an n-type semiconductor layer, and a second conductive semiconductor layer that is a p-type semiconductor layer. Conversely, the first conductive semiconductor layer may have a p-type semiconductor layer, and the second conductive semiconductor layer may have an n-type semiconductor layer. The light-emitting chip (31) may have a single light-emitting cell in which the light-emitting structure (310) is continuously connected, or may include a plurality of light-emitting cells separated by slots. The plurality of light-emitting cells may be connected in series or in parallel, but are not limited thereto.

As shown in FIG. 2, the lower portion of the light-emitting chip (31) may include a plurality of electrodes (41, 42, 43, 44), and the plurality of electrodes (41, 42, 43, 44) may include at least one electrode connected to the first conductive semiconductor layer and at least one electrode connected to the second conductive semiconductor layer. In an embodiment, the lower portion of the light-emitting chip (31) may include first and second electrodes (41, 42) corresponding to the first and second lead electrodes (21, 22), and third and fourth electrodes (23, 24) corresponding to the third and fourth lead electrodes (23, 24). The first and second electrodes (41, 42) may be connected to or separated from each other, and the third and fourth electrodes (43, 44) may be connected to or separated from each other. The first and second electrodes (41, 42) may be connected to a p-type semiconductor layer, and the third and fourth electrodes (43, 44) may be connected to an n-type semiconductor layer. Conversely, the first and second electrodes (41, 42) may be connected to an n-type semiconductor layer, and the third and fourth electrodes (43, 44) may be connected to a p-type semiconductor layer. The first electrode (41) may correspond to the first lead electrode (21), the second electrode (42) may correspond to the second lead electrode (22), the third electrode (43) may correspond to the third lead electrode (23), and the fourth electrode (44) may correspond to the fourth lead electrode (24).

The first to fourth electrodes (41, 42, 43, 44) may include a plurality of metals, such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), and aluminum (Al), and may be formed in a single layer or multiple layers. The first to fourth electrodes (41, 42, 43, 44) may be arranged in the first direction at a predetermined interval. The interval between the first to fourth electrodes (41, 42, 43, 44) may be equal to or greater than the interval between the first to fourth lead electrodes (21, 22, 23, 24). The area of each electrode (41, 42, 43, 44) may be equal to or less than the area of each lead electrode (21, 22, 23, 24).

<Absence of joint>

The above-described bonding members (61, 62, 63, 64) may be arranged between the light-emitting chip (31) and the supporting substrate (11). The above-described bonding members (61, 62, 63, 64) may electrically connect the electrodes (41, 42, 43, 44) of the light-emitting chip (31) and the lead electrodes (21, 22, 23, 24) of the supporting substrate (11). The above-described bonding members (61, 62, 63, 64) may be formed of different conductive materials or may include at least two types of conductive materials. The above-described bonding members (61, 62, 63, 64) may be arranged between each electrode (41, 42, 43, 44) of the light-emitting chip (31) and each lead electrode (21, 22, 23, 24) of the supporting substrate (11). The above-described bonding members (61, 62, 63, 64) may include, for example, a first bonding member (61) disposed between the first electrode 41) and the first lead electrode (21), a second bonding member (62) disposed between the second electrode (42) and the second lead electrode (22), a third bonding member (63) disposed between the third electrode (43) and the third lead electrode (23), and a fourth bonding member (64) disposed between the fourth electrode (44) and the fourth lead electrode (24).

The first to fourth bonding members (61, 62, 63, 64) may be formed of two types of bonding members, for example, conductive materials having different melting points or melting points. Among the first to fourth bonding members (61, 62, 63, 64), the first and fourth bonding members (61, 64) may be formed of a metal solder material, and the second and third bonding members (62, 63) may be formed of a sintered metal material. The eutectic temperature (or melting point temperature) of the metal solder material may be higher than a predetermined temperature (or melting point temperature) of the sintered metal. The eutectic reaction time (or melting time) of the metal solder material may be shorter than the sintering reaction time (or melting time) of the sintered metal. The metal solder becomes a liquid at a temperature higher than the eutectic temperature, and the sintering temperature is a temperature at which powders undergo a thermal activation process to become a single lump.

The above metal solder material may be a high melting point material such as Sn-Ag-Cu, Sn-Ag, Sn-Cu, or Sn-Sb, a medium melting point material such as Sn-Zn or Sn-Pb, a low melting point material such as Sn-Bi or Sn-In, or may be selected from Sn-Au or Zn-Al materials. The above metal solder material may be selectively formed from Sn, Pb, Zn, or Bi. The above metal solder material may be formed as a medium to high melting point material between 150 degrees and 250 degrees.

The sintered metal may include a metal or alloy material, and may include a metal obtained by mixing, forming, and sintering powders of a metal or non-metal. The sintered metal may include at least one of, for example, Ag-W, Cu-W, Ag-WC, Cu-WC, Ag-Mo, Ag-Ni, Ag-CdO, Cu-Sn-Fe-C, Cu-Sn-P-Cr-C, Fe-Cu-Pb, Cu-Sn-Pb-C, Cu-Sn-Pb-SiO-C, Fe-Cu-C, Fe-C-SiC, D-Cu, D-Fe, D-Ni, D-WC-Co (D is diamond). The sintered metal may include at least one of Ag, Au, Cu, W, Mo, Ta, Nb, Re, and alloys thereof. The sintered metal includes a powder of nanoparticles, and may have a melting point lower than the melting point of the metal solder, that is, a process temperature. Accordingly, even if the first and fourth joining members (61, 64) are melted by an external process, the alignment position of the light-emitting chip may not be misaligned due to the sintering time of the second and third joining members (62, 63).

The sintered metal's sintering reaction time may be longer than the process reaction time of the metal solder. This is because the metal solder becomes a liquid state above the process temperature, and at this time, surface tension is generated in the liquid metal solder, and the connection position can be determined so that the light-emitting chip (31) corresponds to the lead electrodes (21, 22, 23, 24) of the support substrate (11). However, since the sintered metal has a long reaction time, it does not proceed with melting and sintering. That is, the cooling process of the metal solder is carried out by maintaining the hardening and sintering temperature at a constant temperature. The sintered metal can react at a temperature lower than the melting temperature of the bulk metal by using nano-sized powder particles as a raw material, due to the Gibbs-Thomson effect of the nano metal particles.

When the process temperature of the metal solder continues to rise to the cooling reaction temperature, the powder of the melting sintered metal begins to diffuse and bond between the electrodes (41, 42, 43, 44) and the lead electrodes (21, 22, 23, 24). When the reaction of the sintered metal is completed, the melting point rises to the level of the bulk metal. Accordingly, even if the LED chip is mounted on the support substrate (11) together with other electronic components, even if the metal solder melts again during bonding, the melting point of the bulk metal is not reached, so that the portion of the light-emitting chip (31) bonded to the sintered metal is fixed, and an error in which the position of the light-emitting chip (31) is misaligned can be prevented. In addition, when a plurality of light-emitting chips (31) are mounted on the support substrate (11), the misalignment of each light-emitting chip (31) can be prevented, thereby providing an alignment effect, thereby reducing the problem of realignment.

For example, the light-emitting chip (31) is bonded by a bonding member (61, 64) of metal solder and a bonding member (62, 63) of sintered metal, so that the bonding member (61, 64) of metal solder and the bonding member (62, 63) of sintered metal are bonded to different lead electrodes on the support substrate (11), so that the position can be determined by aligning with the bonding temperature of the metal solder, and then the light-emitting chip (31) can be fixed in position through the sintering time of the powder of the sintered metal. Accordingly, high reliability can be provided while maintaining the positional precision of the light-emitting chip (31)(s).

At this time, the tension due to self-alignment is proportional to the amount of metal solder, but when it exceeds a certain amount, it overflows. This is explained by the static model of the array elements in the translational direction when the boundary pattern between different wettability areas is square.

The loading model is based on the following premises and assumes simplifications. See Fig. 14 (a), (b), and (c).

(1) The radius of curvature of the liquid r is uniform

(2) The thickness of the liquid is uniform;

(3) The four angles captured by straight lines a-b or c-d are equal (see Fig. 14).

(4) The angle α is changed or the liquid overflows so that the wetting angle γ is within the range of the contact angle of the high-wetting region, 0°.

In this case, the wetting angles γ _i in the ideal and stable states (See (a) of Fig. 14) is the model parameters of Table 1, which are expressed as the following equation based on the surface tension characteristics. Fig. 14 is a zero alignment error model in the static module of the self-static force in the transition direction, where (a) is the zero alignment error, (b) is the non-zero alignment error (0γ<γ ₀ ), and (c) is the non-zero alignment (γ = γ ₀ ). The γ ₀ is a constant angle on the low wettability region.

[Formula 1]

T: Surface tension of the liquid
γ: wetting angle
m: mass of micropart 2
Po: atmospheric pressure
Pl: Liquid pressure
V: liquid volume
A: Area of high wettability surface
L: Distance of high wettability region
H: Thickness of the liquid
g: acceleration due to gravity

In Table 1 and Fig. 14, micro part 2 may be a light-emitting chip, and micro part 1 may be a supporting substrate.

In the above equation 1, the wetting angle γ _i is the angle at which the metal solder and the electrode come into contact. The volume is determined using the wetting angle (γ _i ) of the metal solder and V ≒ Ah. The volume determined at this time is the maximum, and any additional amount of metal solder may cause overflow.

If the weight (m) of the light-emitting chip (31) is, for example, 1.06 micrograms, the surface tension (T) of the metal solder is 0.4 N/m, the thickness (H) is 30 μm, and the volume or volume (V) is 13.5 nl, then when these are substituted into Equation 1, the wetting angle (γ _{i )} can be 104 degrees, and at this time, the wetting angle (γ _i ) is equal to γ ₀ . Therefore, the metal solder can be effectively applied up to a wetting angle of 104 degrees. Even if the metal solder melts within this wetting angle, it can be self-aligned.

Here, the surface of the electrode (41, 42, 43, 44) of the light-emitting chip (31), for example, the lowermost layer is formed with a gold (Au) layer, and the lead electrode (21, 22, 23, 24) of the support substrate (11) is formed with a Ni/Au layer laminated on a copper foil pattern, the pattern size of the electrode and the lead electrode is 50 µm x 45 µm, the material of the metal solder is Sn-Ag-Cu (SAC) system, and the sintered metal can be applied as a paste having nano-sized Ag powder and then reflowed. As shown in the graphs of FIGS. 15 and 16, when looking at the metal solder, i.e., the eutectic solder profile, it can be seen that the melting temperature of the eutectic solder is higher and the sintering time is shorter for the sintered metal. This can be done by heating up to the melting point temperature of the process solder, melting the metal solder and providing a self-alignment effect, then cooling down to below the melting point through a cooling process and maintaining it at the sintering temperature of the sintered metal to bond the electrode of the light-emitting chip (31) and the lead electrode, and then cooling down to below 50 degrees to complete the reflow process. Through this process, the light-emitting chip (31) can be bonded to the support substrate (11).

According to an embodiment, among the first to fourth bonding members (61, 62, 63, 64), bonding members having relatively short process times, for example, the first and fourth bonding members (62, 63), may be arranged adjacent to opposite sides or opposite edges of the light-emitting chip (31), and bonding members having relatively long process times, for example, the second and third bonding members (62, 63), may be arranged between the first and fourth bonding members (61, 64) below the center region of the light-emitting chip (31). The second and third bonding members (62, 63) may be arranged below the center of the light-emitting chip (31) rather than the edge, thereby preventing misalignment or misalignment of the light-emitting chip (31). When mounting other components or other light-emitting chips on the support substrate (11) after mounting the light-emitting chip (31), if some of the bonding members melt due to the bonding temperature, a problem may occur in which the light-emitting chip (31) becomes misaligned from the alignment position. The embodiment prevents misalignment of the light-emitting chip (31) and eliminates alignment errors by using a bonding member (62, 63) made of a sintered metal material on the center side of the light-emitting chip (31), thereby improving the optical reliability of the light-emitting chip (31) and the light-emitting module having the same.

The electrodes (41, 42, 43, 44) arranged under the light-emitting chip (31) or the lead electrodes (21, 22, 23, 24) and the bonding members (61, 62, 63, 64) are described as being arranged in one direction, but they may be arranged in two or more columns or two or more rows, and are not limited thereto.

<Absence of light transmission (51)>

The above-described light-transmitting member (51) may be placed on the above-described support substrate (11). The above-described light-transmitting member (51) covers the light-emitting chip (31) placed on the above-described support substrate (11). The above-described light-transmitting member (51) covers the upper portion and the periphery of the light-emitting chip (31) and protects the light-emitting chip (31). The above-described light-transmitting member (51) may be formed of a light-transmitting and insulating material. The above-described light-transmitting member (51) may include a material such as silicone or epoxy. The thickness of the above-described light-transmitting member (51) may be greater than the thickness of the light-emitting chip (31), and may be formed to be more than 1 time, for example, more than 1 time and less than 3 times the thickness of the light-emitting chip (31), thereby improving the light transmission efficiency.

The above-mentioned light-transmitting member (51) may have a fluorescent substance distributed inside. As another example, a fluorescent substance layer having a predetermined thickness and having a fluorescent substance added thereto may be arranged on the upper surface of the light-emitting chip (31). The fluorescent substance layer may be arranged on the upper surface of the light-emitting chip (31) or on the upper surface and side surfaces. The fluorescent substance absorbs incident light and converts the wavelength into light of a different wavelength. The above phosphor may include at least one of a yellow phosphor, a green phosphor, a blue phosphor, and a red phosphor, and may be at least one selected from, for example, a nitride phosphor, an oxynitride phosphor, and a cyanophosphor mainly activated by lanthanoid elements such as Eu and Ce, an alkaline earth halogen apatite phosphor mainly activated by lanthanoid elements such as Eu and transition metal elements such as Mn, an alkaline earth metal borate halogen phosphor, an alkaline earth metal aluminate phosphor, an alkaline earth silicate, an alkaline earth sulfide, an alkaline earth thiogallate, an alkaline earth silicon nitride, a germanate, or a rare earth aluminate mainly activated by lanthanoid elements such as Ce, a rare earth silicate, or an organic and organic complex mainly activated by lanthanoid elements such as Eu. As specific examples, the above phosphors can be used, but are not limited thereto.

The light emitted through the above light-transmitting member (51) may include at least one of blue, green, red, or white light. The white light may have a color temperature of at least one of warm white, cool white, or neutral white.

The embodiment may include a reflective light-transmitting member (51) between the side surfaces of the light-emitting chip (31) and the light-transmitting member (51). The reflective light-transmitting member (51) may be a resin material having a metal oxide having reflective properties and may be arranged around the light-emitting chip (31). The reflective light-transmitting member (51) may reflect the side light of the light-emitting chip (31) upward, thereby reducing the loss of the side light and improving the amount of light.

The embodiment can maintain the self-alignment effect of the light-emitting chip (31)(s) and the strength of the bonding member (61, 62, 63, 64) at high temperatures. That is, the metal solder can be automatically aligned by the sintered metal at the process temperature, and high-temperature stability by the sintered metal can be maintained in the high-temperature region.

The embodiment can improve the lifespan and temperature characteristics of the light-emitting chip (31). This can prevent the problem of the light-emitting chip (31) being misaligned from the alignment position even when the metal solder used for the light-emitting chip (31) is used when the light-emitting chip (31) and other electronic components are mounted together on the support substrate (11). In addition, even when operating at a high temperature, since the re-bonding is performed by the bonding member (62, 63) of the sintered metal, the heat transfer effect to the support substrate (11) is not impaired, so the lifespan and chromatic imbalance can be alleviated. Compared to the die bonding of the light-emitting chip (31), the external impact is reduced, so that damage to the light-emitting chip (31) can be prevented. Here, the other components can include a light-receiving element such as a photodiode, a light sensor, and a protection element such as a zener diode.

In an embodiment, when a plurality of light-emitting chips (31) with different characteristics are mounted on a support substrate (11), even if the mounting order is different, the alignment position is not distorted, so color separation between the light-emitting chips (31) does not occur and color uniformity does not deteriorate.

In the embodiment, when an optical lens is placed on the light-emitting module (100) of Fig. 1, the positional misalignment of the light-emitting chip (31) can be prevented, thereby improving the reliability and design freedom of the optical module. In addition, the mounting time or alignment pattern of the light-emitting chip(s) (31) is unnecessary, thereby increasing the yield.

FIGS. 4 and 5 are drawings showing a light-emitting module according to the second embodiment. In explaining the second embodiment, the same parts as those of the first embodiment are referred to in the configuration and description of the first embodiment, and the configuration can be selectively applied.

Referring to FIGS. 4 and 5, the light-emitting module is configured to bond a supporting substrate (11) and a light-emitting chip (31) with a bonding member (61, 64) having a metal solder and a bonding member (62, 62) having a sintered metal. The first and fourth lead electrodes (21, 24) of the supporting substrate (11) may include extension portions (21A, 24A) that protrude further outward than the side surface of the light-emitting chip (31). The extension portions (21A, 24A) of the first and fourth lead electrodes (21, 24) may be formed in a hemispherical shape. Since the extension portions (21A, 24A) are provided in a curved shape with a curvature in the outer line, they can provide more area capable of accommodating a solution of a metal solder having a low melting point. Since the tensile strength due to the liquid of the metal solder can be improved, the problem of the solder going out of the bonding area can be reduced. By maintaining the sintering temperature of the sintered metal together with the joining of the metal solder, the light emitting chip (31) can be aligned.

The extension portions (21A, 24A) of the first and fourth lead electrodes (21, 24) on the support substrate (11) can extend in opposite directions with respect to the light-emitting chip (31), and the metal solder on the extension portions (21A, 24A) and the bonding member (61) can be provided with a thickness that gradually becomes thinner as it goes outward.

Figures 6 and 7 are drawings showing a light-emitting module according to the third embodiment. In explaining the third embodiment, the same parts as those of the first embodiment are referred to in the configuration and description of the first embodiment, and the configuration can be selectively applied.

Referring to FIGS. 6 and 7, the light-emitting module is a case where a light-emitting chip (31) is mounted on a support substrate (11) and a light-transmitting member (51A) includes a glass material. The glass material may include at least one of ZnO-PbO-B ₂ O ₃ or PbO-SiO ₂ -B ₂ O _3. Since the glass material melts at a temperature of several hundred degrees, it can melt together with the metal solder. In this case, the light-emitting chip (31) can be aligned on the support substrate (11) by the bonding member (62, 63) of the sintered metal, and can be fixed without a positional difference. The above support substrate (11) may have first to fourth lead electrodes (21, 22, 23, 24) arranged on the upper side, and the light-emitting chip (31) may have first to fourth electrodes (41, 42, 43, 44) corresponding to the lower side, and the first to fourth bonding members (61, 62, 63, 65) disclosed in the embodiment may bond the lead electrodes (21, 22, 23, 24) and the electrodes (41, 42, 43, 44) to each other.

The above-mentioned light-transmitting member (151) may be formed in a shape having a polygonal or circular top view shape and a convex surface (S13) when viewed from a side cross-section (e.g., a longitudinal cross-section), and both side surfaces (S11, S12) in the longitudinal direction may be arranged as vertical surfaces or convex surfaces. The thickness (H1) of the above-mentioned light-transmitting member (151) may gradually become thicker as it goes toward the center.

Fig. 8 is a drawing showing a light emitting module according to the fourth embodiment, in which a plurality of light emitting chips (31) are arranged on a support substrate (11). This is a drawing showing a light emitting module according to the fourth embodiment. In explaining the fourth embodiment, the same parts as those of the first embodiment are referred to in the configuration and description of the first embodiment, and the configuration can be selectively applied.

Referring to FIG. 8, a light-emitting module may have a plurality of light-emitting chips (31) arranged on a supporting substrate (11). The plurality of light-emitting chips (31) may be arranged to be spaced apart from each other on the supporting substrate (11). Each of the light-emitting chips (31) may have first and second electrodes (41A, 43A) arranged thereon, and may correspond to first and second lead electrodes (21A, 23A) of the supporting substrate (11). The first electrode (41A) and the first lead electrode (21A) may be joined with a first bonding member (61A) made of a metal solder material, and the second electrode (43A) and the second lead electrode (23A) may be joined with a second bonding member (63A) made of a sintered metal material. The first bonding member (61A) may be made of a metal solder material, and the second bonding member (63A) may include a sintered metal material. This embodiment can fix the alignment position of the light-emitting chip (31) by arranging at least two kinds of bonding members (61A, 63A) having different melting points and sintering times on one light-emitting chip (31), and can prevent the problem of the alignment position being deviated due to mounting of another light-emitting chip (31) or component. For the detailed configuration of the bonding members (61A, 63A) of the metal solder and the sintered metal, refer to the description of the first embodiment.

Figures 9 to 11 are drawings showing a light-emitting module according to the fifth embodiment. In explaining the fifth embodiment, the same parts as those of the first embodiment are referred to in the configuration and description of the first embodiment, and the configuration can be selectively applied.

Referring to FIGS. 9 to 11, a light-emitting module may include a light-emitting chip (131) disposed on a first lead electrode (122) of a support substrate (111), and the light-emitting chip (131) may be connected to a second lead electrode (121) by one or more wires (181). The support substrate (111) includes a ceramic material, and the ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC) that is co-fired. The material of the support substrate (11) may be a metal compound, for example, Al ₂ O ₃ , or AlN, and preferably may include aluminum nitride (AlN) or alumina (Al ₂ O ₃ ), or may include a metal oxide having a thermal conductivity of 140 W/mK or more.

As shown in Fig. 10, a vertical connection electrode (109, 108) connected to the first and second lead electrodes (122, 121) may be arranged on the upper surface (101) of the support substrate (111), and the connection electrode (109, 108) may be connected to the lower lead frame (126, 128).

The above light-emitting chip (131) may be connected to the first lead electrode (122) by a connecting member (161, 162, 163) by a conductive support member (131C) disposed at the lower portion of the light-emitting structure (131A). This light-emitting chip (131) may be defined as a vertical chip. The light-emitting chip (131) may include a fluorescent layer (131B) on the light-emitting structure (131A).

An optical lens (151) made of a light-transmitting material may be placed on the above-described support substrate (111) to protect the light-emitting chip (131) and wire (181). This optical lens (151) may be formed of a resin material such as silicone or epoxy, or may be formed of a glass material.

Since the first and second lead electrodes (122, 121) occupy 80% or more of the upper surface area of the support substrate (111), the light-emitting chip (131) can be arranged in a large area, for example, a size of 1 mm×1 mm or more. Since the light-emitting chip (131) with such a large area is joined by heterogeneous joining members (161, 162, 163), a problem of misalignment may occur due to joining by a single type of joining member. As shown in FIGS. 9 and 10, the embodiment may include a plurality of lead patterns (122A, 125, 122B) on the first lead electrode (122) corresponding to the light-emitting chip (131). The lead patterns (122A, 125, 122B) may be regions of the first lead electrode (122) that overlap with the light-emitting chip (131) in a vertical direction. The above plurality of lead patterns (122A, 125, 122B) include a first lead pattern (122A) positioned under a first region of the support member (131C), a second lead pattern (125) positioned under a second region, and a third lead pattern (122B) positioned under a third region. The second region may be a region between the first and third regions.

As shown in FIG. 10 and FIG. 11, the first lead electrode (122) includes a first lead pattern (122A), a second lead pattern (125), and a third lead pattern (122B), and the second lead pattern (125) can be arranged between the first and third lead patterns (122A, 122B). The width (D3) of the second lead pattern (125) can be 40% or more, for example, in the range of 40% to 60%, of the width of the light-emitting chip (131). The widths (D1, D2) of the first and third lead patterns (122A, 122B) can be 30% or less, for example, in the range of 10% to 30%, of the width (e.g., X1) of the light-emitting chip (131), and can overlap with the light-emitting chip (131). The length (D4) of the second lead pattern (125) may be 80% or more of the length (Y1) of the light-emitting chip (131). The lengths of the first and third lead patterns (122A, 122B) may be equal to or greater than the length (Y1) of the light-emitting chip (131).

The second lead pattern (125) may be spaced apart from or separated from the first and third lead patterns (122A, 122B). That is, a slot (125A, 125B) may be arranged between the second lead pattern (125) and the first and third lead patterns (122A, 122B), and the slot shape may be linear, polygonal, or circular. The second lead pattern (125) may be connected to the first lead electrode (122), and may be thermally and electrically connected to the light-emitting chip (131). The first and third lead patterns (122A, 122B) may be formed integrally with the first lead electrode (122). The first to third lead patterns (122A, 125, 122B) can be connected to the conductive support member (131C) of the light-emitting chip (131).

The first and third bonding members (161, 162) may be bonded between the conductive support member (131C) of the light-emitting chip (131) and the first and third lead patterns (122A, 122B), and the second bonding member (163) may be bonded between the conductive support member (131C) and the second lead pattern (125). The first and third bonding members (161, 162) may include metal solder, and the second bonding member (163) may include sintered metal. Accordingly, the second bonding member (163) positioned below the center of the light-emitting chip (131) can fix the alignment position and prevent positional misalignment caused by the first and third bonding members (161, 162). Refer to the description of the above-described embodiment for the joining member (161, 162) of the above-described metal solder and the joining member (163) of the sintered metal.

Fig. 12 is a drawing showing an example of a light-emitting chip of a light-emitting module according to an embodiment.

Referring to Fig. 12, the light-emitting chip (31) is, for example, an LED chip that can emit blue light. The light-emitting chip (31) includes a light-transmitting substrate (311) and a light-emitting structure (310). The light-transmitting substrate (311) is disposed on the light-emitting structure (310), and the light-emitting structure (310) can be disposed on the first and second electrodes (41, 46).

The above-described transparent substrate (311) may be, for example, a transparent, conductive substrate or an insulating substrate. A plurality of protrusions (not shown) may be formed on an upper surface and/or a lower surface of the transparent substrate (311), and each of the plurality of protrusions may have a side cross-section having at least one of a hemispherical shape, a polygonal shape and an oval shape, and may be arranged in a stripe shape or a matrix shape. The protrusions may improve light extraction efficiency. Another semiconductor layer, for example, a buffer layer (not shown), may be disposed between the transparent substrate (311) and the first conductive semiconductor layer (313), but is not limited thereto. The transparent substrate (311) may be removed, but is not limited thereto.

The above light-emitting structure (310) includes a first conductive semiconductor layer (313), a second conductive semiconductor layer (315), and an active layer (314) between the first and second conductive semiconductor layers (313, 315). Other semiconductor layers may be further arranged above and/or below the active layer (314), but this is not limited thereto. For this light-emitting structure (310), reference will be made to the description of the embodiment disclosed above.

The first and second electrodes (41, 46) may be placed under the light-emitting structure (310). The first electrode (41) may be in contact with and electrically connected to the first conductive semiconductor layer (313), and the second electrode (46) may be in contact with and electrically connected to the second conductive semiconductor layer (315).

The first electrode (41) and the second electrode (46) may be formed of a non-transparent metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but are not limited thereto. The first and second electrodes (41, 46) may have a polygonal or circular bottom shape.

The light-emitting chip (31) includes first and second electrode layers (331, 332), a third electrode layer (333), and a resin layer (334, 335). Each of the first and second electrode layers (331, 332) may be formed as a single layer or multiple layers and may function as a current diffusion layer. The first and second electrode layers (331, 332) may include a first electrode layer (331) disposed under the light-emitting structure (310); and a second electrode layer (332) disposed under the first electrode layer (331). The first electrode layer (331) diffuses current, and the second electrode layer (332) reflects incident light. The recess (336) may expose a portion of the light-emitting structure (310) through the first and second electrode layers (331, 332). A portion of the above light-emitting structure (310) may be an area of the first conductive semiconductor layer (313).

The first and second electrode layers (331, 332) above may be formed of different materials. The first electrode layer (331) may be formed of a light-transmitting material, and may be formed of, for example, a metal oxide or a metal nitride. The first electrode layer (331) may be selectively formed of, for example, ITO (indium tin oxide), ITON (ITO nitride), IZO (indium zinc oxide), IZON (IZO nitride), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), and GZO (gallium zinc oxide). The second electrode layer (332) is in contact with the lower surface of the first electrode layer (331) and may function as a reflective electrode layer. The second electrode layer (332) includes a metal, such as Ag, Au or Al. The second electrode layer (332) can partially contact the lower surface of the second conductive semiconductor layer (315) when a portion of the first electrode layer (331) is removed.

As another example, the structures of the first and second electrode layers (331, 332) may be laminated in an omni-directional reflection (ODR: Omni Directional Reflector layer) structure. The omni-directional reflection structure may be formed by a laminated structure of a first electrode layer (331) having a low refractive index and a second electrode layer (332) made of a highly reflective metal material in contact with the first electrode layer (331). The electrode layers (331, 332) may be formed in a laminated structure of, for example, ITO/Ag. This can improve the omnidirectional reflection angle at the interface between the first electrode layer (331) and the second electrode layer (332).

As another example, the second electrode layer (332) may be removed and formed as a reflective layer of a different material. The reflective layer may be formed as a distributed Bragg reflector (DBR) structure, and the distributed Bragg reflector structure includes a structure in which two dielectric layers having different refractive indices are alternately arranged, and for example, may include different ones of a SiO2 layer, a _{Si3N4 layer} , a TiO2 _layer , an _{Al2O3 layer} , and a MgO layer, respectively. As another example, the electrode layers (331, 332) may include both a distributed Bragg reflection structure and an omnidirectional reflection structure, in which case a light-emitting chip having a light reflectance of 98% or more may be provided. Since the light-emitting chip mounted in the flip manner emits light reflected from the second electrode layer (332) through the light-transmitting substrate (311), most of the light may be emitted in the vertically upward direction.

The third electrode layer (333) is disposed below the second electrode layer (332) and is electrically insulated from the first and second electrode layers (331, 332). The third electrode layer (333) includes at least one of metals, such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). The first electrode (41) and the second electrode (46) are disposed below the third electrode layer (333).

The above insulating layer (334, 335) blocks unnecessary contact between the first and second electrode layers (331, 332), the third electrode layer (333), the first and second electrodes (41, 46), and the layers of the light-emitting structure (310). The above insulating layer (334, 335) includes the first and second insulating layers (334, 335). The first insulating layer (334) is disposed between the third electrode layer (333) and the second electrode layer (332). The second insulating layer (335) is disposed between the third electrode layer (333) and the first and second electrodes (41, 46).

The third electrode layer (333) is connected to the first conductive semiconductor layer (313). The connecting portion (333A) of the third electrode layer (333) protrudes into the recess (336) of the first and second electrode layers (331, 332) and the light-emitting structure (310) and comes into contact with the first conductive semiconductor layer (313). Here, the recess (336) may have a width that gradually narrows as it approaches the substrate (311). The recess (336) may provide an inclined surface. A plurality of the recesses (336) may be arranged spaced apart from each other. The connecting portion (333A) may be arranged in each of the recesses (336). A part (334A) of the first insulating layer (334) extends around the connection portion (333A) of the third electrode layer (333) to block electrical connection between the third electrode layer (333) and the first and second electrode layers (331, 332), the second conductive semiconductor layer (315), and the active layer (314). An insulating layer may be arranged on the side surface of the light-emitting structure (310) for side surface protection, but is not limited thereto.

The second electrode (46) is disposed below the second insulating layer (335) and is in contact with or connected to at least one of the first and second electrode layers (331, 332) through the open area of the first insulating layer (334) and the second insulating layer (335). The first electrode (41) is disposed below the second insulating layer (335) and is connected to the third electrode layer (333) through the open area of the second insulating layer (335). Accordingly, the protrusion (46S) of the second electrode (46) is electrically connected to the second conductive semiconductor layer (315) through the first and second electrode layers (331, 332), and the protrusion (41S) of the first electrode (41) is electrically connected to the first conductive semiconductor layer (313) through the third electrode layer (333). The first electrode (41) may be a layer corresponding to the first or fourth electrode of Fig. 2, and may be joined with a joining member (61) made of a metal solder material. The second electrode (66) may be a layer corresponding to the second or third electrode of Fig. 2, and may be joined with a joining member (66) made of a sintered metal material.

The connecting portions (333A) connected to the first electrode (41) may be arranged in multiple numbers, thereby improving current diffusion. The first and second electrodes (41, 46) may be provided with a large area below the light-emitting structure (310). The lower surfaces of the first and second electrodes (41, 46) may be provided with a larger area on the same horizontal plane, thereby improving the bonding area with the bonding member. Accordingly, the bonding efficiency of the first and second electrodes (41, 46) with the bonding member may be improved. The light-emitting chip (31) may have or include a phosphor layer (301) arranged on the upper surface.

Fig. 13 is another example of a light-emitting chip of a light-emitting module according to an embodiment, and the same parts as those described in Fig. 12 are exclusively described in Fig. 12.

Referring to Fig. 13, the light-emitting chip (31) includes a light-transmitting substrate (311), a light-emitting structure (310), an electrode layer (341), and an insulating layer (343). The materials of the electrode layer (341) and the insulating layer (343) refer to the above description.

The above light-emitting chip (31) includes a first electrode (351) and a second electrode (361) below the light-emitting structure (310). The first electrode (351) includes a first contact layer (352), a first connection layer (353), and a first bonding layer (354). The first contact layer (352) is in contact with the first conductive semiconductor layer (313), and the first connection layer (353) is disposed between the first contact layer (352) and the first bonding layer (354). The first contact layer (352), the first connection layer (353), and the first bonding layer (354) may be disposed in a single-layer or multi-layer structure. The first contact layer (352) may include at least one of Cr, Ti, Ta, and a selective alloy thereof, the first connection layer (353) may include at least one of Al, Ti, Fe, Ni, and a selective alloy thereof, and the first bonding layer (354) may include at least one of In, Sn, Ni, Au, and a selective alloy thereof. The first bonding layer (354) may be a layer corresponding to the lowermost layer of the first or fourth electrode of FIG. 2, and may be bonded to a bonding member (61) made of a metal solder material.

The second electrode (361) includes a second contact layer (362), a second connection layer (363), and a second bonding layer (364). The second contact layer (362) is disposed on the second conductive semiconductor layer (315), and the second connection layer (363) is connected between the second contact layer (362) and the second bonding layer (364). The second contact layer (362), the second connection layer (363), and the second bonding layer (364) may be disposed in a single-layer or multi-layer structure. The second contact layer (362) includes at least one of Cr, Ti, Ta, and a selective alloy thereof, the second connection layer (363) includes at least one of Al, Ti, Cu, Ag, Pt, and a selective alloy thereof, and the second bonding layer (364) may include at least one of In, Sn, Cu, Au, and a selective alloy thereof. The above second bonding layer (364) may be a layer corresponding to the lowermost layer of the second or third electrode of FIG. 2, and may be bonded to a bonding member (66) made of a sintered metal material.

The light-emitting chip (31) may have a support member (371) disposed below the light-emitting structure (310). The support member (371) is formed of an insulating material, and the insulating material is formed of, for example, a resin layer such as silicone or epoxy. As another example, the insulating material may include a paste or an insulating ink. The material of the insulating material may be composed of a resin including, alone or in combination, polyacrylate resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenilene oxide resin (PPO), polyphenylenesulfides resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and PAMAM-OS (organosilicon) having a PAMAM inner structure and an organo-silicon outer surface.

At least one of compounds such as oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr may be added to the support member (371). Here, the compound added to the support member (371) may be a heat dissipating agent, and the heat dissipating agent may be used as powder particles, grains, fillers, or additives of a predetermined size, and for the convenience of the following description, it will be described as a heat dissipating agent. The heat dissipating agent comprises a ceramic material, and the ceramic material comprises at least one of a low temperature co-fired ceramic (LTCC), a high temperature co-fired ceramic (HTCC), alumina, quartz, calcium zirconate, forsterite, SiC, graphite, fused silica, mullite, cordierite, zirconia, beryllia, and aluminum nitride. The above ceramic material may be a ceramic series such as, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y (x ≥ 0.1, y ≥ 0.1), SiO _x N _y (x ≥ 0.1, y ≥ 0.1), Al ₂ O ₃ , BN, SiC (SiC-BeO), BeO, CeO, AlN. The above thermally conductive material may include a component of C (diamond, CNT).

The above-mentioned support member (371) may be formed as a single layer or multiple layers, but is not limited thereto. Since the support member (371) includes a powder of a ceramic material therein, the strength of the support member (371) is improved, and the thermal conductivity can also be improved. The thickness of the support member (371) may be formed to be 2 ㎛ or more, and when formed to be less than 2 ㎛, the improvement in the support and thermal conductivity characteristics of the support member (371) may be minimal.

The above-described support member (371) may be arranged in a structure in which the first support member arranged around the first electrode (351) and the second support member arranged around the second electrode (361) are separated from each other, so that heat generated from each electrode can be dissipated. The above-described phosphor layer (301) may be arranged on the semiconductor element. The phosphor layer (301) may be arranged on the light-emitting chip (31). The phosphor layer (301) may be arranged in one or more layers based on the light-emitting chip (31).

An optical lens may be arranged on a light-emitting chip or light-emitting module according to an embodiment. The optical lens may include a hemispherical or aspherical lens shape. When the optical lens is an aspherical lens, the emitted light may be diffused while lowering the height of the optical lens, thereby reducing the color separation phenomenon. The optical lens may be in contact with or spaced apart from, for example, an upper surface of a phosphor layer. The optical lens may be formed of a transparent resin material, such as silicone or epoxy. As another example, the optical lens may be formed of a glass material or a transparent plastic material.

The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to just one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified and implemented in other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the above description has been made with reference to examples, these are merely examples and do not limit the present invention, and those with ordinary knowledge in the field to which the present invention pertains will recognize that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present invention. For example, each component specifically shown in the examples can be modified and implemented. And the differences related to such modifications and applications should be interpreted as being included in the scope of the present invention defined in the appended claims.

11,111: Supporting substrate
15,16,17,18,108,109: Connecting electrodes
21,22,23,24,121,122: Lead electrodes
26,28,126,128: Lead Frame
31,131: Light-emitting chip
61,62,63,64,161,162,163: Joint member
51,51A: Absence of light transmission
151: Optical Lens

Claims (9)

A light-emitting structure having a plurality of semiconductor layers, a light-emitting chip having a first electrode and a second electrode under the light-emitting structure;
A supporting substrate having a first lead electrode corresponding to the first electrode, and a second lead electrode corresponding to the second electrode;
a first bonding member between the first electrode and the first lead electrode; and
A second bonding member is included between the second electrode and the second lead electrode,
The above first bonding member comprises a metal solder material,
The first joining member and the second joining member comprise different types of materials,
A light emitting module wherein the second bonding member comprises a material having a melting point temperature lower than the melting point temperature of the first bonding member and a melting time longer than the melting time of the first bonding member. A light-emitting structure having a plurality of semiconductor layers, a light-emitting chip having a conductive support member under the light-emitting structure;
A supporting substrate having a first lead electrode positioned below the light-emitting chip and a second lead electrode spaced apart from the first lead electrode; and
A plurality of different bonding members are included between the conductive support member and the first lead electrode,
The first lead electrode includes a first lead pattern disposed under a first region of the support member, a second lead pattern disposed under a second region of the support member, and a third lead pattern disposed under a third region of the support member.
The above-mentioned bonding member includes a first bonding member between the first region of the support member and the first lead pattern, a second bonding member between the second region of the support member and the second lead pattern, and a third bonding member between the third region of the support member and the third lead pattern.
The above first and third joint members are made of the same metal solder material.
A light emitting module wherein the second bonding member comprises a material having a melting point temperature lower than the melting point temperature of the first bonding member and a melting time longer than the melting time of the first bonding member. In paragraph 1 or 2,
The above second bonding member is a light emitting module including a sintered metal. In the first paragraph,
A third electrode and a fourth electrode are arranged below the light-emitting chip and are spaced apart from the first and second electrodes.
The second and third electrodes are placed between the first and fourth electrodes,
The above support substrate includes third and fourth lead electrodes spaced apart from the first and second lead electrodes and corresponding to the third and fourth electrodes,
The above second and third lead electrodes are placed between the first and fourth lead electrodes,
a third bonding member between the third electrode and the third lead electrode, and
A fourth bonding member is included between the fourth electrode and the fourth lead electrode,
The third joining member comprises the same material as the second joining member,
The fourth joint member comprises the same material as the first joint member,
The above second bonding member comprises a sintered metal,
The above first and second electrodes are connected to either the first or second polarity of the power source,
The above 3rd and 4th electrodes are light emitting modules connected to different polarities of the power supply. In paragraph 4,
A light emitting module comprising first and second lead frames below the support substrate, at least one connecting electrode connecting the first and second electrodes to the first lead frame, and at least one connecting electrode connecting the third and fourth electrodes to the second lead frame. In the fifth paragraph, at least one of the first and fourth lead electrodes includes an extension portion extending outward from the side surface of the light-emitting chip,
A light emitting module wherein at least one of the first and fourth joining members is disposed on an extension portion of at least one of the first and fourth lead electrodes. In paragraph 1 or 2,
At least one of a light-transmitting member and an optical lens covering the light-emitting chip on the supporting substrate is included,
A light-emitting module in which the above-mentioned light-transmitting member or optical lens comprises a resin material or a glass material having a temperature higher than the melting point of the metal solder. In Article 7,
A light emitting module wherein the glass material comprises either ZnO-PbO-B ₂ O ₃ or PbO-SiO ₂ -B ₂ O ₃ . In paragraph 1 or 2,
The above first bonding member includes at least one of Sn, Pb, Zn, and Bi.
A light emitting module wherein the second bonding member comprises at least one of Ag, Au, Cu, W, Mo, Ta, Nb, Re and alloys thereof.

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