CN103762962A - Pre-amplifying latch comparator with low detuning - Google Patents
Pre-amplifying latch comparator with low detuning Download PDFInfo
- Publication number
- CN103762962A CN103762962A CN201410001389.1A CN201410001389A CN103762962A CN 103762962 A CN103762962 A CN 103762962A CN 201410001389 A CN201410001389 A CN 201410001389A CN 103762962 A CN103762962 A CN 103762962A
- Authority
- CN
- China
- Prior art keywords
- offset
- adjustment
- bias
- switch
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Analogue/Digital Conversion (AREA)
Abstract
本发明公开了一种低失调的预放大锁存比较器,包括基础预放大锁存比较器、失调补偿对管、失调校准开关和失调校准控制电路,所述基础预放大锁存比较器包括第一级的预放大器、第二级的锁存器,所述失调补偿对管包括失调调整管,所述失调调整管并联在预放大器的输出端,通过改变失调调整管的栅压来调整整个比较器的失调电压;所述失调校准控制电路采用数字双向移位器存储失调信息并控制失调补偿电路进行失调校准。本发明提供的低失调的预放大锁存比较器,在现有的预放大锁存比较器的基础上加入了基于数字存储和控制的失调校准控制电路,能够将预放大锁存比较器的失调减小到原来的1/N,经过校准后的比较器大幅度地减小了失调。
The invention discloses a low-offset pre-amplification latch comparator, which includes a basic pre-amplification latch comparator, an offset compensation pair, an offset calibration switch, and an offset calibration control circuit. The basic pre-amplification latch comparator includes a first The first-stage pre-amplifier, the second-stage latch, the offset compensation pair includes an offset adjustment tube, the offset adjustment tube is connected in parallel to the output terminal of the pre-amplifier, and the entire comparison is adjusted by changing the grid voltage of the offset adjustment tube. The offset voltage of the device; the offset calibration control circuit uses a digital bidirectional shifter to store offset information and controls the offset compensation circuit to perform offset calibration. The low offset pre-amplification latch comparator provided by the present invention adds an offset calibration control circuit based on digital storage and control on the basis of the existing pre-amplification latch comparator, which can reduce the offset of the pre-amplification latch comparator Reduced to the original 1/N, the calibrated comparator greatly reduces the offset.
Description
技术领域technical field
本发明涉及一种低失调的预放大锁存比较器,属于比较器技术。The invention relates to a low offset pre-amplification latch comparator, which belongs to the comparator technology.
背景技术Background technique
比较器将输入模拟信号转化为数字信号,是模拟到数字的一个重要接口,广泛运用于模数转换器,数模转换器等电路。其中预放大锁存比较器由于预放大器能够放大输入模拟信号、隔离输出数字对输入信号影响,以及锁存器的快速比较锁存,相对于精度高速度慢的放大器型比较器,能够很好的发挥锁存型比较器的速度优势,并在精度上有一定的提高。因而预放大锁存比较器在实际工程实践中得到广泛应用。但是随着数字电路的飞速发展,对模数转换器,数模转换器等电路的速度、精度要求不断提高,利用传统的预放大锁存比较器很难满足高精度要求,因此对预放大锁存比较器的失调校准在高速高精度的应用中发挥着重要的作用。The comparator converts the input analog signal into a digital signal, which is an important interface from analog to digital, and is widely used in circuits such as analog-to-digital converters and digital-to-analog converters. Among them, the pre-amplified latch comparator can amplify the input analog signal, isolate the influence of the output digital on the input signal, and the fast comparison latch of the latch. Compared with the amplifier-type comparator with high precision and slow speed, it can be very good Take advantage of the speed of the latch comparator and improve the accuracy to a certain extent. Therefore, the pre-amplified latch comparator is widely used in practical engineering practice. However, with the rapid development of digital circuits, the speed and precision requirements of analog-to-digital converters and digital-to-analog converters continue to increase. It is difficult to meet the high-precision requirements using traditional pre-amplified latch comparators. The offset calibration of the memory comparator plays an important role in high-speed and high-precision applications.
传统的失调校准技术是在比较器工作的时候用电容存储失调,再对预放大器进行失调校准。这种方法会限制比较器的速度,并且只能校准预放大器的失调,并没有对锁存器进行失调校准。The traditional offset calibration technique is to use a capacitor to store the offset when the comparator is working, and then perform offset calibration on the pre-amplifier. This approach limits the speed of the comparator and only calibrates the offset of the preamplifier, not the latch.
发明内容Contents of the invention
发明目的:为了克服现有技术中存在的不足,本发明提供一种低失调的预放大锁存比较器,提高比较器的精度。Purpose of the invention: In order to overcome the deficiencies in the prior art, the present invention provides a low offset pre-amplified latch comparator to improve the accuracy of the comparator.
技术方案:为实现上述目的,本发明采用的技术方案为:Technical scheme: in order to achieve the above object, the technical scheme adopted in the present invention is:
一种低失调的预放大锁存比较器,包括基础预放大锁存比较器、失调补偿对管、失调校准开关和失调校准控制电路,所述基础预放大锁存比较器包括第一级的预放大器、第二级的锁存器,所述失调补偿对管包括失调调整管,所述失调调整管并联在预放大器的输出端,作为比较器失调补偿的载体,通过改变失调调整管的差分栅压来补偿比较器的失调电压;所述失调校准开关作为失调校准控制电路是否进行失调校准操作的使能开关;所述失调校准控制电路采用双向移位寄存器,用于存储失调信息并调整失调调整管的栅压以补偿比较器的失调。失调校准控制电路采用有源器件,能够保证校准后的失调补偿对管的偏置电压Vcal_L/Vcal_R保持不变,避免了用电容作为存储失调的器件时,电路中MOS漏电流使得电容漏电的情况。A low-offset pre-amplification latch comparator, including a basic pre-amplification latch comparator, an offset compensation pair, an offset calibration switch, and an offset calibration control circuit, the basic pre-amplification latch comparator includes a first-stage pre-amplification The amplifier and the latch of the second stage, the offset compensation pair includes an offset adjustment tube, and the offset adjustment tube is connected in parallel to the output terminal of the pre-amplifier as the carrier of the offset compensation of the comparator. By changing the differential gate of the offset adjustment tube voltage to compensate the offset voltage of the comparator; the offset calibration switch is used as an enable switch for whether the offset calibration control circuit performs an offset calibration operation; the offset calibration control circuit uses a bidirectional shift register for storing offset information and adjusting offset adjustment The gate voltage of the tube is used to compensate the offset of the comparator. The offset calibration control circuit uses active devices, which can ensure that the bias voltage V cal_L /V cal_R of the tube after calibration remains unchanged, avoiding the leakage current of the MOS in the circuit when the capacitor is used as a device for storing offsets. Case.
所述失调校准控制电路包括失调补偿对管偏置电路、偏置调整电路、偏置调整选通开关和偏置调整控制模块;所述失调补偿对管偏置电路用于将电流源产生的电流转化为偏置电压;所述偏置调整电路用于产生调整电流,通过失调补偿对管偏置电路调整失调补偿对管的栅压;所述偏置调整选通开关用于将偏置调整电路产生的调整电流源选通至失调补偿对管偏置电路进行偏置;所述偏置调整控制模块主要由双向移位寄存器构成,对偏置调整电路的电流源开关进行控制。The offset calibration control circuit includes an offset compensation pair tube bias circuit, a bias adjustment circuit, a bias adjustment gating switch and a bias adjustment control module; the offset compensation pair tube bias circuit is used to convert the current generated by the current source It is converted into a bias voltage; the bias adjustment circuit is used to generate an adjustment current, and the grid voltage of the offset compensation pair tube is adjusted through the offset compensation bias circuit; the bias adjustment gate switch is used to adjust the bias adjustment circuit The generated adjustment current source is gated to offset compensation to bias the tube bias circuit; the bias adjustment control module is mainly composed of a bidirectional shift register, and controls the current source switch of the bias adjustment circuit.
所述失调补偿对管偏置电路主要由第二十PMOS管M20、二十一PMOS管M21、第二十二PMOS管M22、第二十五NMOS管M25和第二十六NMOS管M26构成;第二十PMOS管M20与第二十一PMOS管M21和第二十二PMOS管M22构成电流镜;第二十五NMOS管M25和第二十六NMOS管M26连接成二极管形式作为MOS管电阻,将由电流源镜像而来的电流Ir1叠加上由失调调整电路产生的补偿电流ICL/ICR转化为失调补偿对管的偏置电压Vcal_L/Vcal_R。The bias circuit for offset compensation is mainly composed of the twenty-first PMOS transistor M20, the twenty-first PMOS transistor M21, the twenty-second PMOS transistor M22, the twenty-fifth NMOS transistor M25, and the twenty-sixth NMOS transistor M26; The 20th PMOS transistor M20, the 21st PMOS transistor M21 and the 22nd PMOS transistor M22 form a current mirror; the 25th NMOS transistor M25 and the 26th NMOS transistor M26 are connected in a diode form as a MOS transistor resistor, The current I r1 mirrored by the current source is superimposed on the compensation current I CL /I CR generated by the offset adjustment circuit to convert it into the offset compensation pair tube bias voltage V cal_L /V cal_R .
所述偏置调整电路包括一组并联的调整电流源,每个调整电流源串联一个电流源开关;每个调整电流源为一个PMOS管,每个电流源开关为一个PMOS管;所述第二十PMOS管M20与调整电流源构成电流镜。本发明所采取的失调校准方法能够将失调电压降低为校准前的1/N,其中N为调整电流源的数量。调整电流源的数量取决于所要达到的精度,增加调整电流源的个数能够提高失调校准的精度,而相应减少调整电流源的个数则会减小失调校正的效果;电流源开关的状态决定了所串联的调整电流源的是否有效。设计所有作为调整电流源的PMOS管是带有权重的,权重体现在PMOS管的宽长比;加入权重可以使得每一步调整的比较器失调电压相同,即输入失调电压调整步长相同。The bias adjustment circuit includes a group of parallel adjustment current sources, and each adjustment current source is connected in series with a current source switch; each adjustment current source is a PMOS transistor, and each current source switch is a PMOS transistor; the second The ten PMOS transistors M20 and the adjustment current source form a current mirror. The offset calibration method adopted by the present invention can reduce the offset voltage to 1/N before calibration, where N is the number of adjusted current sources. The number of adjustment current sources depends on the accuracy to be achieved. Increasing the number of adjustment current sources can improve the accuracy of offset calibration, and correspondingly reducing the number of adjustment current sources will reduce the effect of offset calibration; the state of the current source switch determines Whether the adjustment current source connected in series is effective. All PMOS transistors used as adjustment current sources are designed to have weights, and the weights are reflected in the width-to-length ratio of the PMOS transistors; adding weights can make the comparator offset voltage adjusted at each step the same, that is, the input offset voltage adjustment step size is the same.
所述偏置调整选通开关包括选通开关控制电路和选通开关主体;所述选通开关控制电路包括第一SR触发器SR1、第二RS触发器SR2、第一反相器N1、第五十一NMOS管M51和第五十二NMOS管M52,第一SR触发器SR1由第一或非门NOR1和第二或非门NOR2组成,第二RS触发器SR2由第三或非门NOR3和第四或非门NOR4组成;所述选通开关主体包括一个二选一数据选择器,所述数据选择器主要由第五十三NMOS管M53和第五十五NMOS管M55构成,在数据选择器中串联第五十四NMOS管M54和第五十六NMOS管M56,所述第五十四NMOS管M54和第五十六NMOS管M56作为数据选择器的复位端。The bias adjustment gating switch includes a gating switch control circuit and a gating switch main body; the gating switch control circuit includes a first SR flip-flop SR1, a second RS flip-flop SR2, a first inverter N1, a second Fifty-first NMOS transistor M51 and fifty-second NMOS transistor M52, the first SR flip-flop SR1 is composed of a first NOR gate NOR1 and a second NOR gate NOR2, and the second RS flip-flop SR2 is composed of a third NOR gate NOR3 and the fourth NOR gate NOR4; the main body of the strobe switch includes a data selector for choosing one of two, and the data selector is mainly composed of the fifty-third NMOS transistor M53 and the fifty-fifth NMOS transistor M55. The fifty-fourth NMOS transistor M54 and the fifty-sixth NMOS transistor M56 are connected in series in the selector, and the fifty-fourth NMOS transistor M54 and the fifty-sixth NMOS transistor M56 serve as a reset terminal of the data selector.
所述偏置调整控制模块主要由双向移位寄存器及其控制电路构成,双向移位寄存器的数目与偏置调整电路中电流源开关的个数相等,表示失调校正的精度(设N个双向移位寄存器的比较器校准后的失调为a,只有1个双向移位寄存器的比较器校准后的失调为b,a=1b/N),每个双向移位寄存器控制一个电流源开关,双向移位寄存器的输出信号接入电流源开关的栅极;所述双向移位寄存器主要由二选一数据选择器(可以设计与偏置调整选通开关中的数据选择器结构相同)和边缘D触发器构成,通过偏置调整选通开关的输出CONT控制第一传输门TG1和第二传输门TG2选通OP3或者ON3作为二选一数据选择器的选择信号。一般设计:双向移位寄存器最低位的数据选择器正端(1端)连接电流源开关的闭合电平,由于使用PMOS开关,闭合电平为低电平;双向移位寄存器最低位的数据选择器负端(0端)连接电流源开关的断开电平,即高电平。The bias adjustment control module is mainly composed of a bidirectional shift register and its control circuit. The number of the bidirectional shift register is equal to the number of current source switches in the bias adjustment circuit, indicating the accuracy of offset correction (assuming N bidirectional shift registers The calibrated offset of the comparator of the bit register is a, and the calibrated offset of the comparator with only one bidirectional shift register is b, a=1b/N), each bidirectional shift register controls a current source switch, and the bidirectional shift register The output signal of the bit register is connected to the gate of the current source switch; the bidirectional shift register is mainly triggered by a two-to-one data selector (which can be designed to have the same structure as the data selector in the bias adjustment strobe switch) and an edge D The first transmission gate TG1 and the second transmission gate TG2 are controlled by the bias adjustment output CONT of the strobe switch to select OP3 or ON3 as the selection signal of the two-to-one data selector. General design: the positive terminal (terminal 1) of the data selector at the lowest bit of the bidirectional shift register is connected to the closing level of the current source switch. Since the PMOS switch is used, the closing level is low; the data selection of the lowest bit of the bidirectional shift register The negative terminal (0 terminal) of the device is connected to the disconnection level of the current source switch, that is, the high level.
有益效果:本发明提供的低失调的预放大锁存比较器,在现有的预放大锁存比较器的基础上加入了基于数字存储和控制的失调校准控制电路,能够将预放大锁存比较器的失调减小到原来的1/N,N为移位寄存器的位数;经过校准后的比较器大幅度地减小了失调,并且能够根据应用场合灵活的调整校准位数N;不同于传统的失调校准控制电路,本发明在加入了失调校准控制电路之后并不影响比较器的速度,在比较器校准结束之后,由数字电路构成的调整控制模块并不产生静态功耗;本发明的调整属于复位型调整,在比较器正常工作的时候,失调校准控制电路保持着失调校准后的状态,因此本发明还可以与比较器工作过程进行失调校准的技术兼容,从而进一步提高比较器的精度。Beneficial effects: the low offset pre-amplification latch comparator provided by the present invention adds an offset calibration control circuit based on digital storage and control on the basis of the existing pre-amplification latch comparator, and can compare the pre-amplification latch The offset of the comparator is reduced to the original 1/N, and N is the number of bits of the shift register; the calibrated comparator greatly reduces the offset, and can flexibly adjust the number of calibration bits N according to the application; different from The traditional offset calibration control circuit, the present invention does not affect the speed of the comparator after adding the offset calibration control circuit, after the comparator calibration is completed, the adjustment control module composed of digital circuits does not generate static power consumption; the present invention The adjustment belongs to the reset type adjustment. When the comparator is working normally, the offset calibration control circuit maintains the state after offset calibration. Therefore, the present invention can also be compatible with the technology of offset calibration in the working process of the comparator, thereby further improving the accuracy of the comparator. .
附图说明Description of drawings
图1为基于本发明的一种预放大锁存比较器失调校准电路拓扑结构图;Fig. 1 is a kind of pre-amplification latch comparator offset calibration circuit topological structure diagram based on the present invention;
图2为基于本发明的一种偏置调整电路拓扑结构图;FIG. 2 is a topological structure diagram of a bias adjustment circuit based on the present invention;
图3为基于本发明的一种偏置调整选通开关拓扑结构图;Fig. 3 is a topological structure diagram of a bias adjustment gating switch based on the present invention;
图4为基于本发明的一种偏置调整控制模块拓扑结构图;Fig. 4 is a topological structure diagram of a bias adjustment control module based on the present invention;
图5为比较器失调电压等效示意图;FIG. 5 is an equivalent schematic diagram of comparator offset voltage;
图6为预放大锁存比较器失调校准电路关键节点电压波形图。Fig. 6 is a voltage waveform diagram of key nodes of the offset calibration circuit of the pre-amplified latch comparator.
具体实施方式Detailed ways
下面结合附图对本发明作更进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings.
如图1所示为一种低失调的预放大锁存比较器,包括基础预放大锁存比较器1、失调补偿对管2、失调校准开关3和失调校准控制电路4,所述基础预放大锁存比较器1包括第一级的预放大器、第二级的锁存器,所述失调补偿对管2包括失调调整管,所述失调调整管并联在预放大器的输出端,作为比较器失调补偿的载体,通过改变失调调整管的栅压来调整比较器的失调电压;所述失调校准开关3作为失调校准控制电路4是否进行失调校准操作的使能开关;所述失调校准控制电路4采用双向移位寄存器,用于存储失调信息并调整失调调整管的栅压以补偿比较器的失调。As shown in Figure 1, it is a low-offset pre-amplification latch comparator, including a basic
如图1所示,所述基础预放大锁存比较器1一种属于现有电路,包括第一级的预放大器、第二级的锁存器和反相器。As shown in FIG. 1 , the basic pre-amplification
所述预放大器主要由第一NMOS管M1、第二NMOS管M2、第六NMOS管M6、以及第七PMOS管MOS7至第十PMOS管M10构成;其中,第一NMOS管M1和第二NMOS管M2为预放大器的输入对管,第六NMOS管M6是预放大器的尾电流,第七PMOS管M7至第十PMOS管M10构成预放大器的负载;预放大器的输入对管同时作为基础预放大锁存比较器1的差分输入端,第一NMOS管M1的输入信号为IP1,第二NMOS管M2的输入信号为IN1,预放大器的输出信号为OP1和ON1。The pre-amplifier is mainly composed of a first NMOS transistor M1, a second NMOS transistor M2, a sixth NMOS transistor M6, and a seventh PMOS transistor MOS7 to a tenth PMOS transistor M10; wherein, the first NMOS transistor M1 and the second NMOS transistor M2 is the input pair tube of the pre-amplifier, the sixth NMOS tube M6 is the tail current of the pre-amplifier, the seventh PMOS tube M7 to the tenth PMOS tube M10 constitute the load of the pre-amplifier; the input pair tube of the pre-amplifier is also used as the basic pre-amplifier lock The differential input terminal of the
所述锁存器主要由第十一NMOS管M11至第十四NMOS管M14、第十五PMOS管M15至第十八PMOS管M18、以及第十九NMOS管M19构成;其中,第十一NMOS管M11和第十二NMOS管M12为锁存器的输入端,第十一NMOS管M11的栅极输入信号为OP1,第十二NMOS管M12的栅极输入信号为ON1;第十三NMOS管M13、第十四NMOS管M14、第十五PMOS管M15和第十六PMOS管M16构成锁存器的正反馈;锁存器通过第十七PMOS管M17、第十八PMOS管M18和第十九NMOS管M19接时钟信号实现复位;锁存器的输出信号为OP2和ON2。The latch is mainly composed of the eleventh NMOS transistor M11 to the fourteenth NMOS transistor M14, the fifteenth PMOS transistor M15 to the eighteenth PMOS transistor M18, and the nineteenth NMOS transistor M19; wherein, the eleventh NMOS The transistor M11 and the twelfth NMOS transistor M12 are the input terminals of the latch, the gate input signal of the eleventh NMOS transistor M11 is OP1, the gate input signal of the twelfth NMOS transistor M12 is ON1; the thirteenth NMOS transistor M12 M13, the fourteenth NMOS transistor M14, the fifteenth PMOS transistor M15 and the sixteenth PMOS transistor M16 form the positive feedback of the latch; the latch passes through the seventeenth PMOS transistor M17, the eighteenth PMOS transistor M18 and the tenth Nine NMOS transistors M19 are connected to the clock signal to realize reset; the output signals of the latch are OP2 and ON2.
所述锁存器的输出信号OP2和ON2经过反向器形成基础预防大锁存比较器1的输出信号OP3,ON3。经过反相器能够增强输出的驱动能力,并将输出信号转化为复位电平为0的输出格式。The output signals OP2 and ON2 of said latch form the output signals OP3, ON3 of the
如图1所示,所述失调补偿对管2包括第三NMOS管M3、第四NMOS管M4和第五NMOS管M5,第三NMOS管M3和第四NMOS管M4并联在预放大器的输出端,第三NMOS管M3的输入信号为OP1,第四NMOS管M4的输入信号为ON1;第五NMOS管M5作为第三NMOS管M3和第四NMOS管M4的尾电流,控制流过第三NMOS管M3和第四NMOS管M4的总电流,避免由于第三NMOS管M3和第四NMOS管M4的共模电平过大进入深线性区而影响预放大器的正常工作;第三NMOS管M3的栅极接校准控制电路4的输出信号Vcal_L,第四NMOS管M4的栅极接校准控制电路4的输出信号Vcal_R。As shown in FIG. 1, the offset compensation pair transistor 2 includes a third NMOS transistor M3, a fourth NMOS transistor M4, and a fifth NMOS transistor M5, and the third NMOS transistor M3 and the fourth NMOS transistor M4 are connected in parallel at the output end of the preamplifier. , the input signal of the third NMOS transistor M3 is OP1, the input signal of the fourth NMOS transistor M4 is ON1; the fifth NMOS transistor M5 serves as the tail current of the third NMOS transistor M3 and the fourth NMOS transistor M4, and controls the flow through the third NMOS transistor M4 The total current of the tube M3 and the fourth NMOS tube M4, avoiding the normal operation of the pre-amplifier due to the excessive common mode level of the third NMOS tube M3 and the fourth NMOS tube M4 entering the deep linear region; the third NMOS tube M3 The gate is connected to the output signal V cal_L of the
如图1所示,所述失调校准开关3主要由第一与门AND1和第二与门AND2构成,第一与门AND1的输入信号为OP3和失调校准使能信号EN、输出信号为OP4,第二与门AND2的输入信号为ON3和失调校准使能信号EN、输出信号为ON4。失调校准开关3的功能是在基础预放大锁存比较器1输出结果的基础上加入使能信号:如输入的EN为高电平,输出信号OP4、ON4分别和输入OP3、ON3相同,失调校准控制电路4工作;如果输入的EN为低电平,输出信号OP4、ON4始终为低电平,失调校准控制电路4不工作,保持着最近一次调整的状态不变。As shown in FIG. 1 , the offset
所述失调校准控制电路4包括失调补偿对管偏置电路4.1、偏置调整电路4.2、偏置调整选通开关4.3和偏置调整控制模块4.4;所述失调补偿对管偏置电路4.1用于将电流源产生的电流转化为偏置电压;所述偏置调整电路4.2用于产生调整电流,通过失调补偿对管偏置电路4.1调整失调补偿对管2的栅压;所述偏置调整选通开关4.3用于将偏置调整电路4.2产生的调整电流源选通至失调补偿对管偏置电路4.1进行偏置;所述偏置调整控制模块4.4主要由双向移位寄存器构成,对偏置调整电路4.2的电流源开关进行控制。The offset
如图1所示,所述失调补偿对管偏置电路4.1主要由第二十PMOS管M20、二十一PMOS管M21、第二十二PMOS管M22、第二十三PMOS管M23、第二十四PMOS管M2、第二十五NMOS管M26和第二十六NMOS管M26构成;第二十PMOS管M20与第二十一PMOS管M21和第二十二PMOS管M22构成电流镜;保持开启的第二十三PMOS管M23和第二十四PMOS管M24用于调节失调补偿对管偏置电路4.1的结构,使得失调补偿对管偏置电路4.1和偏置调整电路4.2的结构一致;第二十五NMOS管M25和第二十六NMOS管M26连接成二极管形式作为MOS管电阻,将由电流源镜像而来的电流Ir1叠加上由失调调整电路4.2产生的补偿电流ICL/ICR转化为失调补偿对管2的偏置电压Vcal_L/Vcal_R;As shown in FIG. 1, the offset compensation pair transistor bias circuit 4.1 is mainly composed of the 20th PMOS transistor M20, the 21st PMOS transistor M21, the 22nd PMOS transistor M22, the 23rd PMOS transistor M23, the second The fourteenth PMOS transistor M2, the twenty-fifth NMOS transistor M26, and the twenty-sixth NMOS transistor M26 are formed; the twenty-first PMOS transistor M20, the twenty-first PMOS transistor M21, and the twenty-second PMOS transistor M22 constitute a current mirror; The turned-on twenty-third PMOS transistor M23 and the twenty-fourth PMOS transistor M24 are used to adjust the structure of the offset compensation pair tube bias circuit 4.1, so that the structures of the offset compensation pair tube bias circuit 4.1 and the bias adjustment circuit 4.2 are consistent; The twenty-fifth NMOS transistor M25 and the twenty-sixth NMOS transistor M26 are connected in the form of a diode as a MOS transistor resistor, and the current I r1 mirrored by the current source is superimposed on the compensation current I CL /I CR generated by the offset adjustment circuit 4.2 Converted to the bias voltage V cal_L /V cal_R of the offset compensation pair tube 2;
如图2所示,所述偏置调整电路4.2包括第三十一PMOS管M31至第三十八PMOS管M38、第四十一PMOS管M41至第四十八PMOS管M48,所述第四十一PMOS管M41至第四十八PMOS管M48分别和第三十一PMOS管M31至第三十八PMOS管M38相串联,所述第二十PMOS管M20与第三十一PMOS管M31至第三十八PMOS管M38构成电流镜;第三十一PMOS管M31至第三十八PMOS管M38作为八个调整电流源,产生调整电流I1~I8;四十一PMOS管M41至第四十八PMOS管M48作为控制电流镜的电流I1~I8是否有效的电流源开关,控制偏置电流接入失调补偿对管偏置电路4.1;通过调整电流源I1~I8的权重,可以使得逐个接入的调整电流源I1~I8所调整的失调量相同,即调整第三十一PMOS管M31至第三十八PMOS管M38的尺寸,使得输入失调电压调整步长相同。As shown in FIG. 2, the bias adjustment circuit 4.2 includes a thirty-first PMOS transistor M31 to a thirty-eighth PMOS transistor M38, a forty-first PMOS transistor M41 to a forty-eighth PMOS transistor M48, and the fourth The eleventh PMOS transistor M41 to the forty-eighth PMOS transistor M48 are respectively connected in series with the thirty-first PMOS transistor M31 to the thirty-eighth PMOS transistor M38, and the twentieth PMOS transistor M20 is connected to the thirty-first PMOS transistor M31 to The thirty-eighth PMOS transistor M38 constitutes a current mirror; the thirty-first PMOS transistor M31 to the thirty-eighth PMOS transistor M38 act as eight adjustment current sources to generate adjustment currents I1 to I8; the forty-first PMOS transistors M41 to the forty-eighth Eight PMOS transistors M48 are used as current source switches to control whether the current I1~I8 of the current mirror is effective, and the control bias current is connected to the offset compensation pair tube bias circuit 4.1; by adjusting the weight of the current source I1~I8, it can be connected one by one The offsets adjusted by the adjustment current sources I1˜I8 are the same, that is, the sizes of the thirty-first PMOS transistors M31 to the thirty-eighth PMOS transistors M38 are adjusted so that the adjustment steps of the input offset voltages are the same.
偏置调整选通开关4.3的存在是由于仅使用了一组调整电流源,必须选通需要调整的偏置;如图3所示,所述偏置调整选通开关4.3包括选通开关控制电路和选通开关主体;所述选通开关控制电路包括第一SR触发器SR1、第二RS触发器SR2、第一反相器N1、第五十一NMOS管M51和第五十二NMOS管M52,第一SR触发器SR1由第一或非门NOR1和第二或非门NOR2组成,第二RS触发器SR2由第三或非门NOR3和第四或非门NOR4组成,第一反相器N1、第五十一NMOS管M51和第五十二NMOS管M52连接在第一SR触发器SR1和第二SR触发器SR2之间;所述选通开关主体包括一个二选一数据选择器,所述数据选择器主要由第五十三NMOS管M53和第五十五NMOS管M55构成,在数据选择器中串联第五十四NMOS管M54和第五十六NMOS管M56,所述第五十四NMOS管M54和第五十六NMOS管M56作为上述数据选择器的复位端;由于选通开关的控制信号是由SR触发器构成的,一旦复位结束,偏置调整选通开关4.3将保持该选通状态,直到下一个复位信号到来。The existence of the bias adjustment strobe switch 4.3 is due to the use of only one group of adjustment current sources, and the bias that needs to be adjusted must be gated; as shown in Figure 3, the bias adjustment strobe switch 4.3 includes a strobe switch control circuit and the gate switch main body; the gate switch control circuit includes a first SR flip-flop SR1, a second RS flip-flop SR2, a first inverter N1, a fifty-first NMOS transistor M51 and a fifty-second NMOS transistor M52 , the first SR flip-flop SR1 is composed of the first NOR gate NOR1 and the second NOR gate NOR2, the second RS flip-flop SR2 is composed of the third NOR gate NOR3 and the fourth NOR gate NOR4, the first inverter N1, the fifty-first NMOS transistor M51 and the fifty-second NMOS transistor M52 are connected between the first SR flip-flop SR1 and the second SR flip-flop SR2; the main body of the strobe switch includes a two-to-one data selector, The data selector is mainly composed of the fifty-third NMOS transistor M53 and the fifty-fifth NMOS transistor M55, the fifty-fourth NMOS transistor M54 and the fifty-sixth NMOS transistor M56 are connected in series in the data selector, and the fifth The fourteenth NMOS transistor M54 and the fifty-sixth NMOS transistor M56 are used as the reset terminal of the data selector; since the control signal of the strobe switch is formed by the SR flip-flop, once the reset is completed, the bias adjustment strobe switch 4.3 will remain The strobe state until the next reset signal comes.
如图4所示,所述偏置调整控制模块4.4主要由双向移位寄存器构成,所述双向移位寄存器的数目与偏置调整电路4.2中电流源开关的个数相等,即与偏置调整电路4.2的尾电流个数相等,表示失调校准的精度;八个双向移位寄存器的输出信号分别为Q1至Q8,所述Q1至Q8分别连接第四十一PMOS管M41至第四十八PMOS管M48的栅极输入,即控制偏置调整电路4.2的电流源开关;所述双向移位寄存器主要由二选一数据选择器和边缘D触发器构成,通过偏置调整选通开关4.3的输出CONT控制第一传输门TG1和第二传输门TG2选通OP3或者ON3作为二选一数据选择器的控制信号;第一数据选择器MUX1至第八数据选择器MUX8分别对应第四十一PMOS管M41至第四十八PMOS管M48。通过chose信号来控制双向移位寄存器是从低位到高移位动或者从高位到低移位动:双向移位寄存器最低位正输入端固定在电流源开关的闭合电位,即在图4中的第一数据选择器MUX1正端(1端)连接的是低电平,对应图2中第四十一PMOS管M41闭合;双向移位寄存器最高位负输入端固定在电流源开关的断开电位,即在图4中的第八数据选择器MUX8负端(0端)连接的是高电平,对应图2中第四十八PMOS管M48断开;因此当时钟信号从低电平跳变为高电平,如果双向移位寄存器由低位向高移位动,偏置调整电路4.2多接入一路调整电流源到偏置中;如果双向移位寄存器由高位向低移位动,偏置调整电路4.2会断开已闭合的当前最高位调整电流源开关,即偏置调整电路4.2会减小一路调整电路。OP4和ON4经过或非门作为第一D触发器DF1至第八D触发器DF8的时钟信号ck。As shown in Figure 4, the bias adjustment control module 4.4 is mainly composed of two-way shift registers, and the number of the two-way shift registers is equal to the number of current source switches in the bias adjustment circuit 4.2, that is, equal to the number of current source switches in the bias adjustment circuit 4.2. The number of tail currents in circuit 4.2 is equal, indicating the accuracy of offset calibration; the output signals of the eight bidirectional shift registers are respectively Q1 to Q8, and the Q1 to Q8 are respectively connected to the forty-first PMOS transistor M41 to the forty-eighth PMOS The gate input of the tube M48 is the current source switch that controls the bias adjustment circuit 4.2; the bidirectional shift register is mainly composed of a two-to-one data selector and an edge D flip-flop, and adjusts the output of the strobe switch 4.3 through the bias CONT controls the first transmission gate TG1 and the second transmission gate TG2 to select OP3 or ON3 as the control signal of the two-to-one data selector; the first data selector MUX1 to the eighth data selector MUX8 respectively correspond to the forty-first PMOS transistor M41 to the forty-eighth PMOS transistor M48. The chosen signal is used to control the bidirectional shift register to shift from low to high or from high to low: the positive input terminal of the lowest bit of the bidirectional shift register is fixed at the closed potential of the current source switch, that is, in Figure 4 The positive terminal (terminal 1) of the first data selector MUX1 is connected to a low level, which corresponds to the closing of the forty-first PMOS transistor M41 in Figure 2; the highest negative input terminal of the bidirectional shift register is fixed at the disconnection potential of the current source switch , that is, the negative terminal (0 terminal) of the eighth data selector MUX8 in Figure 4 is connected to a high level, corresponding to the forty-eighth PMOS transistor M48 in Figure 2 being disconnected; therefore, when the clock signal jumps from a low level is high level, if the bidirectional shift register shifts from low to high, the bias adjustment circuit 4.2 connects one more adjustment current source to the bias; if the bidirectional shift register shifts from high to low, the bias The adjustment circuit 4.2 will disconnect the closed current highest position adjustment current source switch, that is, the bias adjustment circuit 4.2 will reduce one adjustment circuit. OP4 and ON4 are used as the clock signal ck of the first D flip-flop DF1 to the eighth D flip-flop DF8 through the NOR gate.
如图5所示,在开始进行失调校准的时候,输入的使能信号EN、复位信号RST皆为高电平,将基础预放大锁存比较器1的差分输入信号IP和IN都接入基础预放大锁存比较器1的输入共模电平VCOM,并将基础预放大锁存比较器1的失调电压等效到输入端,表示成输入失调电压Vos,如图5所示。As shown in Figure 5, at the beginning of offset calibration, the input enable signal EN and reset signal RST are both at high level, and the differential input signals IP and IN of the basic
假设Vos为正(Vos为负的情况与Vos为正的情况比较器校准电路的操作类似,不再重复说明),当时钟信号CLK为低电平时,基础预放大锁存比较器1复位,输出信号OP2、ON2被第十七PMOS管M17和第十八PMOS管M18拉到高电平,经反相器后输出信号为低电平的OP3、ON3,偏置调整选通开关4.3断开与偏Vcal_L、Vcal_R的连接,并复位到电源电压。当时钟信号CLK为高电平的时候,失调电压经过基础预放大锁存比较器1,得到输出结果为:OP2为高电平,ON2为低电平;经过反相器后输出信号为:OP3为低电平,ON3为高电平;由于使能信号EN为高电平,OP4、ON4分别与OP3、ON3的值相同;此时复位信号依旧为高,第一数据选择器MUX1至第八数据选择器MUX8的输出为复位输出,即高电平;第一D触发器DF1至第八D触发器DF8的输入端全部为复位高电平;D触发器的时钟由ON4、OP4经过第五或非门NOR5构成;因此,在CLK高电平结束后,第一D触发器DF1至第八D触发器DF8全部复位,使得第四十一PMOS管M41至第四十八PMOS管M48全部截至;此时调整电路完成了对数字电路部分的复位;当复位输入RST保持高的时候,电路一直保持在复位状态。Assuming that V os is positive (the operation of the comparator calibration circuit when V os is negative is similar to the case where V os is positive, and will not be repeated), when the clock signal CLK is low, the basic preamplifier latches
当复位信号RST从高电平跳变到低电平,且使能信号EN保持为高电平。在下一个CLK时钟从低电平跳变到高电平之前,比较器输出保持OP3低电平,ON3高电平。经过失调校准开关3后OP4,ON4分别与OP3,ON3的值相同。在偏置调整选通开关4.3,由于OP4为低电平,ON4为高电平,因此在复位信号RST跳变为低电平之后,选通控制信号CONT为维持低电平,对应的二选一数据选择器选通VJO-端,连接第四NMOS管M4对应的栅压Vcal_R的偏置电路。选通之后,偏置调整选通开关4.3将保持这个选通状态直到下一个复位信号RST为高电平。When the reset signal RST transitions from high level to low level, and the enable signal EN remains high level. Until the next CLK clock transition from low to high, the comparator output keeps OP3 low and ON3 high. After the offset
当CLK时钟从低电平跳变到高电平,由于还没有进行校准,基础预防大锁存比较器的输出依然为OP3低电平,ON3高电平。因此OP4、ON4分别为低电平、高电平。偏置调整控制模块4.4的数据选择器控制端chose经过传输门一TG1和传输门二TG2为高电平。双向移位寄存器中的数据选择器选择1端的信号因而在这个移位寄存器的时钟ck上升沿跳变,双向移位寄存器正向移一位,即第一双向移位寄存器DF1至第八双向移位寄存器DF8从地位到高位移一位,由于数据选择器MUX1的1输入端接低电平,因此第一寄存器DF1的输出Q1跳变为低电平,而Q7~Q8的保持为高电平。因此Q1的控制的开关第四十一PMOS管M41为导通,流入到第二十六NMOS管M26的电流为第二十二PMOS管M22的电流加上第三十一PMOS管M31的电流。Vcal_R的电压增加了第三十一PMOS管M31的电流乘上第二十六NMOS管M26的电阻。When the CLK clock jumps from low level to high level, since the calibration has not been performed, the output of the basic prevention large latch comparator is still OP3 low level and ON3 high level. Therefore, OP4 and ON4 are low level and high level respectively. The data selector control terminal chosen of the bias adjustment control module 4.4 is at a high level through the first transmission gate TG1 and the second transmission gate TG2. The data selector in the bidirectional shift register selects the signal at
此后,时钟CLK从低电平跳变到高电平,基础预放大锁存比较器1的输出将可能出现两种情况。第一种情况为OP3低电平,ON3高电平;第二种情况为OP3高电平,ON3低电平。Thereafter, the clock CLK jumps from low level to high level, and the output of the basic
在第一种情况,假设前一个状态的双向移位寄存器输出Q1至Qk-1为低电平(k在1至8之间,当出现Q0,则Q1至Q8全部为低电平),那么偏置调整控制模块4.4的双向移位寄存器将再次从低位到高移位一位,双向移位寄存器输出高电平中的最低位跳变低电平即Qk为跳变为低电平,其他双向移位寄存器的输出保持前一个状态,此时Q1到Qk为低电平,Qk+1到Q8为高电平(当出现Q9,则Q1至Q8全部为高电平)。Qk所控制的调整电流源开关第四十加k的PMOS(M40+k)导通,流入到第二十六NMOS管M26的电流为第二十二PMOS管M22的电流加上第三十一PMOS管M31至第三十加k的PMOS管(M30+k)的电流。相对于前一个状态,Vcal_R的电压增加了第三十加k PMOS管(M30+k)的电流乘上第二十六NMOS管M26的电阻。In the first case, assuming that the output of the bidirectional shift register Q1 to Qk-1 in the previous state is low level (k is between 1 and 8, when Q0 appears, all Q1 to Q8 are low level), then The bidirectional shift register of the bias adjustment control module 4.4 will shift again from low to high by one bit, and the lowest bit in the output high level of the bidirectional shift register will jump to low level, that is, Qk will jump to low level, and other The output of the bidirectional shift register maintains the previous state. At this time, Q1 to Qk are at low level, and Qk+1 to Q8 are at high level (when Q9 appears, all Q1 to Q8 are at high level). The PMOS (M40+k) of the fortieth plus k of the adjustment current source switch controlled by Qk is turned on, and the current flowing into the twenty-sixth NMOS transistor M26 is the current of the twenty-second PMOS transistor M22 plus the thirty-first The current of the PMOS transistor (M30+k) from the PMOS transistor M31 to the thirtieth plus k. Compared with the previous state, the voltage of V cal_R is increased by the current of the thirtieth plus k PMOS transistor (M30+k) multiplied by the resistance of the twenty-sixth NMOS transistor M26.
在第二种情况,假设前一个状态的双向移位寄存器输出Q1至Qk为低电平,那么偏置调整控制模块4.4的双向移位寄存器将从高位到低移位一位,双向移位寄存器输出低电平中的最高位跳变高电平,即Qk跳变为高电平,其他移位寄存器的输出保持前一个状态,此时Q1到Qk-1(当出现Q0的时候即全部Q1~Q8全部为高电平)为低电平,Qk到Q8为高电平。Qk所控制的调整电流源开关第四十加k的PMOS(M40+k)截至,流入到第二十六NMOS管M26的电流为第二十二PMOS管M22的电流加上第三十一PMOS管M31至第三十加k-1的PMOS管(M30+k-1)的电流。因此相对于前一个状态,Vcal_R的电压减小了第三十加k PMOS管(M30+k)的电流乘上第二十六NMOS管M26的电阻。In the second case, assuming that the bidirectional shift register outputs Q1 to Qk in the previous state are low level, then the bidirectional shift register of the bias adjustment control module 4.4 will shift one bit from high bit to low bit, and the bidirectional shift register The highest bit in the output low level jumps to high level, that is, Qk jumps to high level, and the output of other shift registers maintains the previous state. At this time, Q1 to Qk-1 (when Q0 appears, all Q1 ~Q8 are all high level) are low level, Qk to Q8 are high level. The PMOS (M40+k) of the fortieth plus k of the adjustment current source switch controlled by Qk ends, and the current flowing into the twenty-sixth NMOS transistor M26 is the current of the twenty-second PMOS transistor M22 plus the thirty-first PMOS The current of the PMOS transistor (M30+k-1) of k-1 is added from the tube M31 to the thirtieth. Therefore, compared to the previous state, the voltage of V cal_R is reduced by the current of the thirtieth plus k PMOS transistor (M30+k) multiplied by the resistance of the twenty-sixth NMOS transistor M26.
当输入使能信号EN跳变为低电平,对基础预放大锁存比较器1的失调校准结束,失调校准控制电路4将保持使能端跳变为低电平时刻的调整状态,基础预放大锁存比较器1开始正常工作。When the input enable signal EN transitions to a low level, the offset calibration of the basic
图6为所示本发明各关键节点电压随着时间的变化曲线。在调整过程中比较器的输入端IP1、IN1接入基础预放大锁存比较器1的输入共模电压VCOM中。从曲线可以看出基础预放大锁存比较器1的输出信号OP3、ON3从校准之前分别维持的输出低电平,高电平到校准完成后比较器输出OP3、ON3交织输出为高电平。通过失调补偿对管2的栅压(Vcal_L,Vcal_R)的相对值变化,基础预放大锁存比较器1的失调得到校准。FIG. 6 is a graph showing the variation curve of the voltage of each key node with time in the present invention. During the adjustment process, the input terminals IP1 and IN1 of the comparator are connected to the input common-mode voltage V COM of the basic
以上所述仅是本发明的优选实施方式,应当指出:对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications are also possible. It should be regarded as the protection scope of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410001389.1A CN103762962B (en) | 2014-01-03 | 2014-01-03 | A kind of Preamplifier-latch comparator of low imbalance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410001389.1A CN103762962B (en) | 2014-01-03 | 2014-01-03 | A kind of Preamplifier-latch comparator of low imbalance |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103762962A true CN103762962A (en) | 2014-04-30 |
CN103762962B CN103762962B (en) | 2016-01-20 |
Family
ID=50530142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410001389.1A Expired - Fee Related CN103762962B (en) | 2014-01-03 | 2014-01-03 | A kind of Preamplifier-latch comparator of low imbalance |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103762962B (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105119602A (en) * | 2015-08-28 | 2015-12-02 | 西安启微迭仪半导体科技有限公司 | Switched capacitor comparator circuit in analog to digital converter |
WO2016134605A1 (en) * | 2015-02-27 | 2016-09-01 | Huawei Technologies Co., Ltd. | Comparator apparatus and method |
CN107241098A (en) * | 2017-05-24 | 2017-10-10 | 东南大学 | The mistuning calibration function circuit of comparator in a kind of asynchronous gradual approaching A/D converter |
CN110061739A (en) * | 2019-05-20 | 2019-07-26 | 长沙景美集成电路设计有限公司 | The PLL circuit and its implementation that a kind of pair of technique causes mos capacitance electric leakage of the grid insensitive |
TWI672002B (en) * | 2018-09-17 | 2019-09-11 | 創意電子股份有限公司 | Comparator circuitry |
CN110474638A (en) * | 2019-07-30 | 2019-11-19 | 成都铭科思微电子技术有限责任公司 | The Background calibration circuit and method of latch-type comparator imbalance error |
CN110855274A (en) * | 2019-10-23 | 2020-02-28 | 广西师范大学 | Low-offset rail-to-rail dynamic latch comparator |
WO2020140469A1 (en) * | 2019-01-02 | 2020-07-09 | 京东方科技集团股份有限公司 | Comparator and analog-to-digital converter |
CN111614333A (en) * | 2020-01-03 | 2020-09-01 | 东南大学 | A High-speed Sampling Amplifier with Offset Cancellation |
CN111899776A (en) * | 2020-08-03 | 2020-11-06 | 安徽大学 | A Circuit Structure for Reducing Offset Voltage of Sense Amplifier in Static Random Access Memory |
CN112466363A (en) * | 2020-12-01 | 2021-03-09 | 西安紫光国芯半导体有限公司 | Sense amplifier, data receiving circuit, electronic device, and data receiving method |
CN112764447A (en) * | 2021-04-07 | 2021-05-07 | 上海艾为微电子技术有限公司 | Dynamic offset calibration circuit, method, chip and electronic equipment |
CN113595533A (en) * | 2021-07-05 | 2021-11-02 | 思澈科技(上海)有限公司 | Direct current offset automatic calibration circuit for high-speed high-bandwidth comparator |
CN118783933A (en) * | 2024-09-10 | 2024-10-15 | 西安电子科技大学杭州研究院 | High-precision comparator based on folding latch |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6316992B1 (en) * | 1999-07-29 | 2001-11-13 | Tripath Technology, Inc. | DC offset calibration for a digital switching amplifier |
US20060186928A1 (en) * | 2005-02-23 | 2006-08-24 | Via Technologies Inc. | Comparators capable of output offset calibration |
CN101034890A (en) * | 2007-02-16 | 2007-09-12 | 东南大学 | Disorder bit compensation circuit for gradual approaching A/D converter |
CN101282117A (en) * | 2007-04-05 | 2008-10-08 | 中国科学院微电子研究所 | A dynamic comparator |
CN101562441A (en) * | 2008-10-08 | 2009-10-21 | 西安电子科技大学 | Ultrahigh-speed comparator with low offset |
CN101917195A (en) * | 2010-08-18 | 2010-12-15 | 中国电子科技集团公司第五十八研究所 | High-precision and low-offset charge comparator circuit |
-
2014
- 2014-01-03 CN CN201410001389.1A patent/CN103762962B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6316992B1 (en) * | 1999-07-29 | 2001-11-13 | Tripath Technology, Inc. | DC offset calibration for a digital switching amplifier |
US20060186928A1 (en) * | 2005-02-23 | 2006-08-24 | Via Technologies Inc. | Comparators capable of output offset calibration |
CN101034890A (en) * | 2007-02-16 | 2007-09-12 | 东南大学 | Disorder bit compensation circuit for gradual approaching A/D converter |
CN101282117A (en) * | 2007-04-05 | 2008-10-08 | 中国科学院微电子研究所 | A dynamic comparator |
CN101562441A (en) * | 2008-10-08 | 2009-10-21 | 西安电子科技大学 | Ultrahigh-speed comparator with low offset |
CN101917195A (en) * | 2010-08-18 | 2010-12-15 | 中国电子科技集团公司第五十八研究所 | High-precision and low-offset charge comparator circuit |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016134605A1 (en) * | 2015-02-27 | 2016-09-01 | Huawei Technologies Co., Ltd. | Comparator apparatus and method |
US9467133B2 (en) | 2015-02-27 | 2016-10-11 | Huawei Technologies Co., Ltd. | Comparator apparatus and method |
CN105119602A (en) * | 2015-08-28 | 2015-12-02 | 西安启微迭仪半导体科技有限公司 | Switched capacitor comparator circuit in analog to digital converter |
CN105119602B (en) * | 2015-08-28 | 2019-01-29 | 西安启微迭仪半导体科技有限公司 | Switching capacity comparator circuit in a kind of analog-digital converter |
CN107241098A (en) * | 2017-05-24 | 2017-10-10 | 东南大学 | The mistuning calibration function circuit of comparator in a kind of asynchronous gradual approaching A/D converter |
TWI672002B (en) * | 2018-09-17 | 2019-09-11 | 創意電子股份有限公司 | Comparator circuitry |
WO2020140469A1 (en) * | 2019-01-02 | 2020-07-09 | 京东方科技集团股份有限公司 | Comparator and analog-to-digital converter |
US10924099B2 (en) | 2019-01-02 | 2021-02-16 | Boe Technology Group Co., Ltd. | Comparator and analog-to-digital converter |
CN110061739A (en) * | 2019-05-20 | 2019-07-26 | 长沙景美集成电路设计有限公司 | The PLL circuit and its implementation that a kind of pair of technique causes mos capacitance electric leakage of the grid insensitive |
CN110061739B (en) * | 2019-05-20 | 2023-12-01 | 长沙景美集成电路设计有限公司 | PLL circuit insensitive to MOS capacitor grid leakage caused by process |
CN110474638B (en) * | 2019-07-30 | 2023-04-25 | 成都铭科思微电子技术有限责任公司 | Background correction circuit and method for offset error of latch comparator |
CN110474638A (en) * | 2019-07-30 | 2019-11-19 | 成都铭科思微电子技术有限责任公司 | The Background calibration circuit and method of latch-type comparator imbalance error |
CN110855274A (en) * | 2019-10-23 | 2020-02-28 | 广西师范大学 | Low-offset rail-to-rail dynamic latch comparator |
CN110855274B (en) * | 2019-10-23 | 2024-05-14 | 广西师范大学 | Low-loss track-to-track dynamic latching comparator |
CN111614333A (en) * | 2020-01-03 | 2020-09-01 | 东南大学 | A High-speed Sampling Amplifier with Offset Cancellation |
CN111899776B (en) * | 2020-08-03 | 2022-09-16 | 安徽大学 | Circuit structure for reducing offset voltage of sense amplifier in static random access memory |
CN111899776A (en) * | 2020-08-03 | 2020-11-06 | 安徽大学 | A Circuit Structure for Reducing Offset Voltage of Sense Amplifier in Static Random Access Memory |
CN112466363A (en) * | 2020-12-01 | 2021-03-09 | 西安紫光国芯半导体有限公司 | Sense amplifier, data receiving circuit, electronic device, and data receiving method |
CN112764447A (en) * | 2021-04-07 | 2021-05-07 | 上海艾为微电子技术有限公司 | Dynamic offset calibration circuit, method, chip and electronic equipment |
CN113595533A (en) * | 2021-07-05 | 2021-11-02 | 思澈科技(上海)有限公司 | Direct current offset automatic calibration circuit for high-speed high-bandwidth comparator |
CN118783933A (en) * | 2024-09-10 | 2024-10-15 | 西安电子科技大学杭州研究院 | High-precision comparator based on folding latch |
Also Published As
Publication number | Publication date |
---|---|
CN103762962B (en) | 2016-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103762962B (en) | A kind of Preamplifier-latch comparator of low imbalance | |
CN105680834B (en) | A kind of dynamic comparer of high-speed low-power-consumption | |
JP4646988B2 (en) | Comparator and A / D converter | |
CN105049043B (en) | A kind of high-speed comparator with offset correction function | |
US9467133B2 (en) | Comparator apparatus and method | |
JP2018528523A (en) | Offset-independent quadrature clock error correction and duty cycle calibration for fast clocking | |
CN101783660B (en) | Flip-Flops and Pipelined Analog-to-Digital Converters | |
CN101674072B (en) | An interface circuit for low voltage differential signal reception | |
CN108768351A (en) | The high speed dynamic comparer of low imbalance low-power consumption under a kind of low supply voltage | |
CN101924540B (en) | Differential time domain comparator circuit | |
CN100521545C (en) | Analog-to-digital converter using three stage folding interpolating structure | |
CN106067822B (en) | A High Speed and High Precision CMOS Latch Comparator | |
CN104333384B (en) | Folding and interpolating analog-digital converter employing offset averaging and interpolation shared resistance network | |
CN109586696B (en) | Offset voltage correction circuit for dynamic comparator | |
CN104020339B (en) | A kind of programmable current testing circuit | |
US20150244355A1 (en) | Low-power offset-stored latch | |
TWI533611B (en) | Current-limited level shift circuit | |
Sujatha et al. | Design and simulation of high speed comparator for LVDS receiver application | |
CN112398476B (en) | Low-power consumption comparator with low delay distortion characteristic | |
CN103066966B (en) | High-speed comparator variable in common-mode wide power supply range | |
Shou et al. | Design of CMOS ternary latches | |
CN203135820U (en) | High-speed comparator working at variable common-mode level in wide power supply range | |
CN108665917A (en) | Receiver and method of controlling receiver | |
CN103746700A (en) | Comparator applied to pipelined ADC (analog-to-digital converter) | |
CN110429916B (en) | Limiting amplifier for improving temperature characteristic |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160120 Termination date: 20210103 |
|
CF01 | Termination of patent right due to non-payment of annual fee |