CN103762501A - Manufacturing method for N-shaped GaAs substrate laser diode - Google Patents
Manufacturing method for N-shaped GaAs substrate laser diode Download PDFInfo
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- CN103762501A CN103762501A CN201410038388.4A CN201410038388A CN103762501A CN 103762501 A CN103762501 A CN 103762501A CN 201410038388 A CN201410038388 A CN 201410038388A CN 103762501 A CN103762501 A CN 103762501A
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Abstract
The invention discloses a manufacturing method for an N-shaped GaAs substrate laser diode. The manufacturing method comprises the steps that a GaAs substrate is formed, and an n-shaped coating layer, an n-shaped light guide layer, an active layer, a p-shaped barrier layer, a p-shaped light guide layer and a p-shaped coating layer are sequentially deposited. The forming method of the GaAs substrate comprises the steps that a GaAs wafer is placed in a high-temperature high-pressure device, the GaAs wafer is heated and pressurized, the heating temperature ranges from 860 DEG C to 890 DEG C, pressure ranging from 5.0 GPa to 5.5 GPa is exerted, and the GaAs wafer is heated and pressurized for 10 minutes to 15 minutes; heating and pressing are stopped, and the GaAs wafer returns to a normal temperature and pressure state; annealing is conducted for 20 minutes-30 minutes in the high-temperature high-pressure device, and the GaAs wafer is taken out. According to the method, crystal defect density of the substrate of the laser diode can be obviously reduced, performance of the laser diode is enhanced, and service life of the laser diode is prolonged.
Description
Technical field
The present invention relates to a kind of manufacture method of laser diode.
Background technology
Laser diode (LD) is a kind ofly by semi-conducting material, to form diode, and its basic structure comprises substrate and is deposited on successively P/N type coating layer, active layer and the P/N type coating layer on substrate, and the ohmic contact on N-type and P type coating layer.Substrate, as the ground of LDZhe Zuo mansion, has important effect.Sapphire is a kind of conventional LD substrate, but due to lattice and the thermal stress mismatch of the hetero epitaxial layer on itself and its, after heating, because degrees of expansion difference can be burst apart, causes device failure.An other class LD substrate comprises GaAs, GaAs, the semi-conducting materials such as InP.In above-mentioned semi-conducting material as substrate, generally all can comprise various defects, such as dislocation, gap or room etc., defect can cause crystal strain, strain meeting causes the quality of epitaxial loayer on substrate and performance to reduce, and causes the lost of life of laser diode.For many years, along with the development of semiconductor technology, process those skilled in the art studying for a long period of time and putting into practice, and have formed comparatively perfect crystal growth technique flow process, have reduced the defect concentration forming in semiconductor substrate materials growth course.But people also wish to obtain the substrate that defect concentration is lower, make the laser diode that performance is better, the life-span is longer.How further to reduce or eliminate defect and become this area urgent problem.
Summary of the invention
In order to overcome the defect existing in prior art, the invention provides a kind of manufacture method of N-type GaAs based laser diode, the method can significantly reduce the defect concentrations in crystals in laser diode substrate, improves performance and the life-span of laser diode.
N-type GaAs based laser diode of the present invention comprises n-GaAs substrate, has deposited successively N-shaped coating layer, N-shaped photoconductive layer and active layer on substrate, wherein,
N-shaped coating layer is n-Al
ain
bga
1-a-bn, 0≤a wherein, b, a+b≤1;
N-shaped photoconductive layer is n-Al
cin
dga
1-c-dn, 0≤c wherein, d, c+d≤1;
Active layer is the n-Al of superlattice structure
ein
fga
1-e-fn/n-AI
gin
hga
1-g-hn multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
On active layer, also deposited successively p-type barrier layer, p-type photoconductive layer and p-type coating layer, wherein p-type barrier layer is p-Al
iin
jga
1-i-jn, p-type photoconductive layer is p-Al
kin
1ga
1-k-1n, p-type coating layer is p-Al
min
nga
1-m-nn, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
The manufacture method of N-type GaAs based laser diode of the present invention comprises the steps, first forms GaAs substrate, secondly on substrate, has deposited successively N-shaped coating layer, N-shaped photoconductive layer, active layer, p-type barrier layer, p-type photoconductive layer and p-type coating layer.
The method that wherein forms GaAs substrate comprises the steps:
(1) at normal temperatures and pressures, GaAs wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
(2) pressurization when GaAs wafer being heated, heating-up temperature is 860～890 ℃, moulding pressure is 5.0～5.5GPa, keeps 10～15 minutes.Wherein, the rate of heat addition is 100 ℃/min, and compression rate is 0.1～0.2GPa/ minute.
(3) stop heating, make GaAs wafer be cooled to normal temperature; Slowly release, makes GaAs wafer return to normal pressure simultaneously.Release speed is 0.3～0.5GPa/ minute.
(4) in high temperature high pressure device, anneal after 20～30 minutes, take out GaAs wafer.
Accompanying drawing explanation
Fig. 1 is the structural representation of N-type GaAs based laser diode of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, describe the present invention, but not as a limitation of the invention.
Fig. 1 shows the structural representation of laser diode of the present invention.It comprises n-GaAs substrate 1, has deposited successively N-shaped coating layer 2, N-shaped photoconductive layer 3 and active layer 4 on substrate 1.
N-shaped coating layer 2 is n-Al
ain
bga
1-a-bn, photoconductive layer 3 is n-Al
cin
dga
1-c-dn, 0≤a wherein, b, c, d, a+b, c+d≤1.
Coating layer 2 can be also n-Al
ain
bga
1-a-bn superlattice.
On active layer 4, also deposited p-type barrier layer 5, p-type barrier layer 5 is p-Al
iin
jga
1-i-jn, is p-type photoconductive layer 6 and p-type coating layer 7 on it, and wherein p-type photoconductive layer 6 is p-Al
kin
1ga
1-k-1n, p-type coating layer 7 is p-Al
min
nga
1-m-nn, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
P type coating layer 7 can be also p-Al
min
nga
1-m-nn superlattice.
In a preferred embodiment, the band gap on coating layer, photoconductive layer and p-type barrier layer is all large than the band gap of active layer.
In a further advantageous embodiment, the band gap of photoconductive layer is less than the band gap of coating layer, and the band gap on p-type barrier layer is larger than the band gap of coating layer.
On p-type coating layer 7, p-type contact layer 8 can be set, p-type contact layer 8 can be p-Al
oin
pga
1-o-pn, 0≤o wherein, p, o+p≤1, the band gap of p-type contact layer is larger than the band gap of active layer, less than the band gap of coating layer.
Contact layer can also be p
+-Al
yin
zga
1-y-zn superlattice, 0≤y wherein, z, y+z≤1.
Etch structures p contact layer, coating layer, active layer and optional n contact layer by this device, form mesa structure.Table top is enough deeply to extend at least under active layer, and can extend to the topmost portion of substrate always.
In order to improve electricity restriction and to reduce threshold current, can pass through peripheral etching one ridge structure of contact layer, and enter in uppermost coating layer.After corrosion forms bar shaped table top and ridge structure, form passivation layer by the side of table top and ridge but not the top passivation of ridge.Passivation layer can comprise SiO
2or SiN
x, can deposit by methods such as thermal evaporation, electron beam evaporation, sputters.
Then, on top surface (p-type) and basal surface (N-shaped), form respectively p-type Metal Contact 9 and N-shaped Metal Contact 10.P-type contact 9 is preferably nickel-billon, and N-shaped contact 10 is preferably Ti-Al alloy.It can form by any method known in the art, for example sputtering sedimentation or electron-beam evaporation.The temperature that above-mentioned contact is annealed between about 400 ℃ to 950 ℃ forms ohmic contact.
Finally, at the in-plane cutter part perpendicular to above-mentioned ridge structure, to determine the length dimension of laser cavity.The length of laser cavity at 100 μ m between 2000 μ m.
The device architecture of having described N-shaped substrate above, the device architecture of p-type substrate is contrary with it, and n-contact layer and p-contact layer and n-coating layer and p-coating layer are put upside down respectively.
The method that wherein forms GaAs substrate comprises the steps:
(1) at normal temperatures and pressures, GaAs wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
(2) pressurization when GaAs wafer being heated, heating-up temperature is 860～890 ℃, moulding pressure is 5.0～5.5GPa, keeps 10～15 minutes; Moulding pressure herein may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 ℃/min, and compression rate is 0.1～0.2GPa/ minute.
(3) stop heating, make GaAs wafer be cooled to normal temperature; Slowly release, makes GaAs wafer return to normal pressure simultaneously.Release speed is 0.3～0.5GPa/ minute.
(4) in high temperature high pressure device, anneal after 20～30 minutes, take out GaAs wafer.
The present invention has carried out the experiment of 50 groups of different temperatures and pressure limit, and GaAs wafer carried out to high temperature high pressure process.Experimental data shows, it is 860～890 ℃ that GaAs wafer is implemented to heating-up temperature, after moulding pressure is the high temperature high pressure process annealing of 5.0～5.5GPa, the density in its dislocation and space is reduced to 25～35% before processing, illustrates that the method has obviously reduced the defect concentration in wafer.Experimental data also shows, the defect concentration of wafer and heating-up temperature after processing, moulding pressure are relevant, and its Main Function of temperature range and pressure limit, but heating, pressurization and decompression rate are also to its effect of the minimizing of defect concentration, above recorded preferred temperature and pressure scope, and preferred heating, pressurization and decompression rate.Cooling does not need to adopt specific process, stops heating rear naturally cooling.The laser diode that adopts the GaAs wafer after processing to form as substrate, has increased disruptive field intensity, has reduced electric leakage, has increased thermal conductivity, and light emission effciency is higher, and reliability is larger.
High temperature high pressure device for the treatment of wafer of the present invention can adopt top, existing two sides and polyhedron high-pressure installation, and polyhedron high-pressure installation comprises hexahedron pressure chamber device and the octahedra chamber device of pressing.Preferably adopt two sides to push up the quiet high-pressure installation of large cavity, referred to as two sides, push up large press.The shell of this device and the material of depression bar are steel alloy, and pressing the material of anvil is tungsten carbide.Adopting this two sides to push up the maximum pressure that large press can reach is 7GPa.Although its maximum pressure is compared, polyhedron high-pressure installation and diamond anvil cell ultra-high pressure apparatus are low, and because its cavity volume is large, the diameter of processing sample, from ten centimetres of left and right, is suitable for processing substrate wafer.
In this high-pressure installation, be provided with electric calorifie installation, it provides heating heat by heating wire, to heating wafer after electric calorifie installation energising.Heating-up temperature reaches as high as 1700 degrees Celsius.
Pressure medium is sodium chloride (NaCl), magnesium oxide (MgO) or liquid nitrogen, and this medium can make pressure be evenly distributed on crystal, makes non-isotropy stress minimum.
NaCl and MgO are low shearing strength solid, and its coefficient of internal friction is lower than 0.2, can well pressure transmission, play heat insulation effect simultaneously, and pressurization is beneficial to heat.Liquid nitrogen, when playing pressure transmission effect, can be restrained the decomposition of GaAs when heating and annealing.
Certainly; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (8)
1. the manufacture method of a N-type GaAs based laser diode, comprise the steps, first form GaAs substrate, secondly on substrate, deposited successively N-shaped coating layer, N-shaped photoconductive layer, active layer, p-type barrier layer, p-type photoconductive layer and p-type coating layer, it is characterized in that
The method that forms GaAs substrate comprises the steps:
(1) at normal temperatures and pressures, GaAs wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
(2) pressurization when GaAs wafer being heated, being heated to temperature is 860～890 ℃, being forced into pressure is 5.0～5.5GPa, keeps 10～15 minutes;
(3) stop heating, make GaAs wafer be cooled to normal temperature; Slowly release, makes GaAs wafer return to normal pressure simultaneously.Release speed is 0.3～0.5GPa/ minute;
(4) in high temperature high pressure device, anneal after 20～30 minutes, take out GaAs wafer.
2. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, in step (2), the rate of heat addition is 100 ℃/min, and compression rate is 0.1～0.2GPa/ minute.
3. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, N-shaped coating layer is n-Al
ain
bga
1-a-bn, 0≤a wherein, b, a+b≤1.
4. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, N-shaped photoconductive layer is n-Al
cin
dga
1-c-dn, 0≤c wherein, d, c+d≤1.
5. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, active layer is the n-Al of superlattice structure
ein
fga
1-e-fn/n-AI
gin
hga
1-g-hn multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
6. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, p-type barrier layer is p-Al
iin
jga
1-i-jn, 0≤i wherein, j, i+j≤1.
7. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, p-type photoconductive layer is p-Al
kin
1ga
1-k-1n, 0≤k wherein, l, k+1≤1.
8. the manufacture method of N-type GaAs based laser diode as claimed in claim 1, is characterized in that, p-type coating layer is p-Al
min
nga
1-m-nn, 0≤m wherein, n, m+n≤1.
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| CN201410038388.4A CN103762501A (en) | 2014-01-26 | 2014-01-26 | Manufacturing method for N-shaped GaAs substrate laser diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038388.4A CN103762501A (en) | 2014-01-26 | 2014-01-26 | Manufacturing method for N-shaped GaAs substrate laser diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269740A (en) * | 2014-09-23 | 2015-01-07 | 中国科学院半导体研究所 | Laser and manufacturing method thereof |
| DE102021114225A1 (en) | 2021-06-01 | 2022-12-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | lighting device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060335A (en) * | 1997-02-12 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of manufacturing the same |
| CN1925180A (en) * | 2005-08-30 | 2007-03-07 | 日立电线株式会社 | Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device |
| CN102856787A (en) * | 2012-09-20 | 2013-01-02 | 江苏威纳德照明科技有限公司 | Manufacturing method of GaN substrate laser diode |
-
2014
- 2014-01-26 CN CN201410038388.4A patent/CN103762501A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060335A (en) * | 1997-02-12 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of manufacturing the same |
| CN1925180A (en) * | 2005-08-30 | 2007-03-07 | 日立电线株式会社 | Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device |
| CN102856787A (en) * | 2012-09-20 | 2013-01-02 | 江苏威纳德照明科技有限公司 | Manufacturing method of GaN substrate laser diode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269740A (en) * | 2014-09-23 | 2015-01-07 | 中国科学院半导体研究所 | Laser and manufacturing method thereof |
| CN104269740B (en) * | 2014-09-23 | 2018-01-30 | 中国科学院半导体研究所 | A kind of laser and preparation method thereof |
| DE102021114225A1 (en) | 2021-06-01 | 2022-12-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | lighting device |
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Application publication date: 20140430 |